TWI401323B - Wire with gold alloy wire - Google Patents
Wire with gold alloy wire Download PDFInfo
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- TWI401323B TWI401323B TW095120712A TW95120712A TWI401323B TW I401323 B TWI401323 B TW I401323B TW 095120712 A TW095120712 A TW 095120712A TW 95120712 A TW95120712 A TW 95120712A TW I401323 B TWI401323 B TW I401323B
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- wire
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- gold alloy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
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Description
本發明係關於用以連接在高溫環境下,例如:在溫度會上昇到100~160℃的汽車的引擎附近的高溫環境下亦能夠使用的電晶體、LSI、IC之類的半導體元件的晶片電極與外部導線部之具有高接合可靠性及壓合金球的高真圓性及高直進性以及高耐樹脂流動性的銲線用金合金線,尤其是具有未滿20μm的細線徑之可在高溫環境下使用的銲線用金合金線。
近年來,電晶體、LSI、IC之類的半導體元件被使用於引擎附近等等的高溫環境下,此外,高頻率用IC的作動溫度係有愈來愈高的趨勢,而且被要求是即使曝露在這種高溫環境下也需具有高度的可靠性。
已知的可作為:用以連接可在這種高溫環境下使用的IC晶片上的電極與外部導線部之銲線用金合金線,其組成分係含有:Pd、Pt、Rh、Ir、Os、Ru之中的至少1種且合計為1000ppm~5質量%;Ca、Be、Ge、Si、Fe、Y、稀土族之中的至少1種且合計為1~50ppm,其餘部分是由Au以及不可避免的雜質所組成(請參考專利文獻1)。這些銲線用金合金線均為含有較多的白金族金屬,以資提昇在高溫時的壓合金球與Al銲墊的接合強度,此外,藉由含有Ca、Be等以資提昇硬度,進而提昇銲線迴圈的穩定性
,為了使用這些銲線用金合金線來連接IC晶片上的電極與外部導線部,通常是採用:以超音波併用熱壓合來銲接金合金線的方法為主。
專利文獻1:日本特開平6-112251號公報
近年來,隨著半導體元件的積體化的進展,半導體元件的Al銲墊面積變小,在高溫的嚴酷的使用環境下需具有高度可靠性的車載用IC、作動溫度變高的高頻率用IC等等,金球銲接的接合界面的接合強度的低落、因電阻上昇所致的接合不良的發生等等的問題,也受到重視,這些接合不良的問題又會因為上述的接合面積的縮小等的銲接條件的惡化,而有愈來愈容易發生的傾向,因此就更需要確保較之以往更高的接合可靠性(在某種環境下的利用金球銲接之接合界面上的接合強度、電阻的持續性)。
此外,如果金球銲接時的壓合金球的真圓性低的話,壓合金球的一部分會從Al銲墊溢出,與相鄰的壓合金球接觸而發生短路的問題,這種的短路問題,會因為Al銲墊面積的縮小以及銲接銲墊間距的縮小,而愈來愈容易發生,因此就更需要較之以往更高的壓合金球的高真圓性。
此外,另一方面,隨著用來接合半導體元件的晶片電極與外部導線部的銲線的迴圈部的長度(以下,稱為迴圈長度)變長,平行地被銲接的相隣的迴圈之間的間隔也變
窄,為了對應這種現狀,作為銲線使用的金合金線的線徑也有愈來愈細的傾向。但是,將捲繞著的細線徑的金合金線從銲線捲線筒取出時,金合金線變得容易發生捲曲、蛇行(撓曲、彎曲),如果使用存在著這種捲曲、蛇行(撓曲、彎曲)現象的金合金線來進行銲接的話,相鄰的銲線將會互相接觸而導致短路,因此會產生半導體晶片的不良品,良率會降低。尤其是金合金所構成的銲線的線徑若未滿20μm的話,剛從銲線捲線筒饋送出來後的銲線更容易發生捲曲、蛇行(撓曲、彎曲)。剛從銲線捲線筒饋送出來後的銲線不發生捲曲、蛇行(撓曲、彎曲)且因銲接而形成的迴圈不會與相鄰的迴圈互相接觸的性質稱為「銲線的直進性」,這種直進性不足的話,則會與相鄰的迴圈相接觸產生短路,會產生半導體裝置的不良品而良率會降低。
此外,雖然是將銲線予以銲接以形成迴圈之後,才利用樹脂予以模注封裝,但是這個時候,如果銲線被樹脂流動的話,相鄰的迴圈會互相接觸發生短路,而產生半導體裝置的不良品,因此良率會降低。關於這種被樹脂流動的問題,如果是以往的銲線用金合金線的線徑為25μm、30μm的情況,很少發生問題,但是隨著半導體元件的高積體化的進展,半導體元件的晶片電極的間隔變窄,為了要對應這種趨勢而先將銲線的線徑變細之後才進行銲接,但是線徑若變成未滿20μm的話,當進行樹脂的模注封裝時,迴圈變得容易流動。因此,必須具備:即使是線徑細的
銲線也不易發生被樹脂流動的特性(以下,將這種特性稱為耐樹脂流動性)。
對於這種近年來的嚴格的要求,專利文獻1所記載的銲線用金合金線並無法充分的對應,因此,本發明之目的就是在於:可符合這些要求之具有更優異的高接合可靠性、壓合金球的更高真圓性、更高直進性以及更高耐樹脂流動性之銲線用金合金線。
本發明人等,為了開發出具有高接合可靠性、壓合金球的高真圓性、高直進性以及高耐樹脂流動性之銲線用金合金線而進行研究之結果,獲得下列(A)~(E)的研究結果:
(A)純度:在99.999質量%的高純度金中,含有:Pt以及Pd之中的1種或2種且合計為5000ppm~2質量%、Ir:1~200ppm、且Ca:20~200ppm、Eu:10~200ppm的組成分的金合金線,雖然多少會犧牲一點導電性,但是在汽車引擎近旁的高溫環境下卻具備有高接合可靠性、壓合金球的高真圓性、高直進性以及高耐樹脂流動性。
(B)在具有前述(A)所述的組成分的金合金線中,又含有Be:0.1~30ppm的金合金線,因為Be具有:會將變形賦予給Au的結晶格子,提昇銲線用金合金線的機械強度,降低再結晶溫度的效果,所以可提高迴圈高度,藉此可達成適切的迴圈高度,所以可因應需求來添加。
(C)在具有前述(A)所述的組成分的金合金線中,又含有La:10~200ppm的金合金線,除了可提昇銲線用金合金線的機械強度,並且可提高再結晶溫度,降低金合金線的迴圈高度,所以可因應需求來添加。
(D)前述Ca、Eu、Be以及La的合計在於50~250ppm的範圍內更佳。
(E)即使在具有前述高接合可靠性、壓合金球的高真圓性、高直進性以及高耐樹脂流動性之(A)~(D)所述的金合金線中,又含有Ag:1~20ppm的話,對其特性也幾乎不會產生影響。
本發明係依據這些研究結果而開發完成的。
(1)一種銲線用金合金線,其組成分係含有:Pt以及Pd之中的1種或2種合計為5000ppm~2質量%、Ir:1~200ppm、Ca:20~200ppm、Eu:10~200ppm,其餘部分係由Au以及不可避免的雜質所組成的。
(2)一種銲線用金合金線,其組成分係含有:Pt以及Pd之中的1種或2種合計為5000ppm~2質量%、Ir:1~200ppm、Ca:20~200ppm、Eu:10~200ppm,此外,又含有:Be:0.1~30ppm,其餘部分係由Au以及不可避免的雜質所組成的。
(3)一種銲線用金合金線,其組成分係含有:Pt以及Pd之中的1種或2種合計為5000ppm~2質量%、Ir:1~200ppm、Ca:20~200ppm、Eu:10~200ppm,此外,又含有:La:10~200ppm,其餘部分係由Au以及不可避免
的雜質所組成的。
(4)一種銲線用金合金線,其組成分係含有:Pt以及Pd之中的1種或2種合計為5000ppm~2質量%、Ir:1~200ppm、Ca:20~200ppm、Eu:10~200ppm,此外,又含有:Be:0.1~30ppm、La:10~200ppm,其餘部分係由Au以及不可避免的雜質所組成的。
(5)如前述(1)、(2)、(3)或(4)所述的銲線用金合金線,其中含有:前述Ca、Eu、Be以及La之中的1種或2種以上,且合計為50~250ppm的範圍內。
(6)如前述(1)、(2)、(3)或(4)所述的銲線用金合金線,其中又含有Ag:1~20ppm。
將具有前述(1)~(6)所述的組成分之金合金線素材進行抽線加工直到變成預定的線徑為止,且在於將所獲得的金合金線素材進行退火處理的銲線用金合金線的製造工程中,藉由以較之以往的退火溫度更低溫的550℃以下的退火溫度來進行退火,假設:0.2%耐力Pa為σ0.2、楊格係數Pa為E、斷裂伸長率為EL的話,將可獲得符合:E≧75GPa、(σ0.2/E)≧2.2×10-3、2%≦EL≦10%的條件之銲線用金合金線。前述金合金線素材於進行抽線加工時的經過1道眼模所獲得的面積縮小率設定成較之以往的面積縮小率更低5%以下更佳。能夠符合這種條件的銲線用金合金線將會具有更高的直進性以及更高的耐樹脂流動性。
因此,本案的第(7)發明係:
(7)如前述(1)、(2)、(3)或(4)所述的銲線用金合金線,假設該銲線用金合金線的0.2%耐力Pa為σ0.2、楊格係數Pa為E、斷裂伸長率為EL的話,符合E≧75GPa、(σ0.2/E)≧2.2×10-3、2%≦EL≦10%的條件。
接下來,將說明本發明的銲線用金合金線之中,為何要將組成分以及機械特性限定在前述範圍的理由。
〔I〕組成分
(a)Pt、Pd:
Pt以及Pd都是百分之百可與Au固溶的元素,具有所謂「能夠抑制壓合金球與Al銲墊之接合強度的劣化」之提昇接合可靠性的效果。為了在接合界面近旁產生層狀的含有Pt、Pd的相,並且利用該相作為降低Au的擴散速度的層(亦即,對抗Au擴散的阻隔層),以資抑制隨著Au的擴散而產生於接合部的孔隙的產生速度,其結果係被認為可抑制壓合金球與Al銲墊之接合強度的劣化進而提高接合可靠性。這種抑制接合強度的劣化(提昇接合可靠性)的效果係Pt、Pd的量愈多的話,效果愈高。但是,Pt以及Pd之中的1種或2種的合計如果未滿5000ppm的話,接合強度劣化的抑制效果受到限定,並不太好,相對地,如果含有Pt以及Pd之中的1種或2種的合計超過2質量%的話,金球的硬度變得太高,銲接時會造成IC晶
片的破裂或損傷,所以也不太好。因此,就將Pt以及Pd之中的1種或2種的合計量選定在5000ppm~2質量%。
(b)Ir:
Ir係具有抑制金合金在高溫時的粒成長(結晶粒的粗大化)之作用,因此,當形成自由空氣金球(free-air ball)時,因為受到來自金球部的熱之影響,可以防止金球正上方的銲線部(熱影響部)的結晶粒變粗大化,並且凝固後的自由空氣金球部係由許多微小的結晶粒所形成,進行接合時,壓合金球係呈放射狀均等地擴散開,而具有提昇壓合金球的真圓性之效果,但是,如果Ir的含有量未滿1ppm的話,無法獲得預期的效果,相對地,在於含有Pt以及Pd之中的1種或2種合計為5000ppm~2質量%的銲線用金合金線中,即使含Ir超過了200ppm,上述的效果將趨於飽和,不僅看不出添加Ir的效果之明顯的提昇,金球的硬度也會變高,將導致IC晶片受到破壞或損傷,所以並不太好。因此,Ir的含有量選定為1~200ppm。
(c)Ca:
屬於鹼土族金屬的Ca,金屬結合半徑較之Au的金屬結合半徑更大,會導致Au的結晶格子變形,而具有提昇銲線用金合金線的機械強度以及自由空氣金球的加工硬化性,進而提升再結晶溫度,使得金合金線的迴圈高度變低之效果,但是,Ca的含量如果未滿20ppm的話,強度很低,變成難以符合E≧75GPa、(σ0.2/E)≧2.2×10-3、2%≦EL≦10%之條件,而導致直進性與耐樹脂流動性變低
,因此並不好,相對地,如果Ca的含有量超過200ppm的話,含有Pt以及Pd之中的1種或2種合計為5000ppm~2質量%的銲線用金合金線的金球的硬度會變高,銲接時,將會導致IC晶片的破裂或損傷,此外,在金球銲接時所形成的自由空氣金球的表面將會產生大量的氧化物,並且會在自由空氣金球的底部中央形成對於接合毫無助益之較大的鑄疵縮孔(ingot piping),所以並不好。因此,Ca的含有量係選定為20~200ppm。
(d)Eu:
屬於稀土族元素的Eu,金屬結合半徑係較之Au的金屬結合半徑更大,會導致Au的結晶格子變形,具有提高銲線用金合金線的機械強度以及自由空氣金球的加工硬化性,並且提昇再結晶溫度,降低金合金線的迴圈高度之效果,Eu的金屬結合半徑與其他的稀土族元素比較,係特別大,因此上述效果非常高,但是Eu的含有量如果未滿10ppm的話,機械強度很低所以難以符合E≧75GPa、(σ0.2/E)≧2.2×10-3、2%≦EL≦10%的條件,直進性與耐樹脂流動性都變低,所以並不好,相對地,如果Eu的含有量超過200ppm的話,含有Pt以及Pd之中的1種或2種合計為5000ppm~2質量%的銲線用金合金線的金球的硬度變高,會導致IC晶片的破裂或損傷,此外,在金球銲接時所形成的自由空氣金球的表面將會產生大量的氧化物,並且會在自由空氣金球的底部中央形成對於接合毫無助益之較大的鑄疵縮孔,所以並不好。因此,Eu的含有
量選定為10~200ppm。
(e)Be:
Be的金屬結合半徑較之Au的金屬結合半徑更小,還是會導致Au的結晶格子變形,可提高銲線用金合金線的機械強度以及自由空氣金球的加工硬化性,同時地含有上述的Ca、Eu以及Be的話,具有降低再結晶溫度之效果,所以能夠提昇迴圈高度,因此得以實現適切的迴圈高度,所以可因應需要來添加,但是Be的添加量若未滿0.1ppm的話,無法獲得預定的效果,相對地,Be的含有量若超過30ppm的話,含有Pt以及Pd之中的1種或2種合計為5000ppm~2質量%的銲線用金合金線的金球硬度會變高,銲接時會導致IC晶片的破裂或損傷,此外,自由空氣金球的表面會產生大量的氧化物,而且在自由空氣金球的底部中央會形成對於接合毫無助益的較大的鑄疵縮孔,此外,金球正上部以及金球部的結晶粒徑會增大而降低壓合金球部的真圓性,所以並不好。因此,Be的含有量選定為0.1~30ppm。
(f)La:
La係具有提昇銲線用金合金線的機械強度以及自由空氣金球的加工硬化性,並且提高再結晶溫度,降低金合金線的迴圈高度之效果,所以可因應需要來添加,但是,如果含La未滿10ppm的話,無法獲得預定的效果,相對地,如果含La超過200ppm的話,含有Pt以及Pd之中的1種或2種合計為5000ppm~2質量%的銲線用金合金線的
金球硬度會變高,銲接時會導致IC晶片的破裂或損傷,此外,金球銲接時所形成的自由空氣金球的表面會產生大量的氧化物,而且在自由空氣金球的底部中央會形成對於接合毫無助益的較大的鑄疵縮孔,所以並不好。因此,La的含有量選定為10~200ppm。
(g)50≦Ca+Eu+Be+La≦250
在含有Pt以及Pd之中的1種或2種合計為5000ppm~2質量%的銲線用金合金線中,Ca、Eu、Be以及La的合計在於50~250ppm的範圍內更佳。其理由是如果Ca、Eu、Be以及La的合計未滿50ppm的話,強度很低,所以難以符合E≧75GPa、(σ0.2/E)≧2.2×10-3、2%≦EL≦10%的條件,結果之直進性與耐樹脂流動性都會變低並不好,相對地,如果Ca、Eu、Be以及La的合計超過250ppm的話,含有Pt以及Pd之中的1種或2種合計為5000ppm~2質量%的銲線用金合金線的金球硬度變高,銲接時會導致IC晶片的破裂或損傷,此外,金球銲接時所形成的自由空氣金球的表面會產生大量的氧化物,而且在自由空氣金球的底部中央會形成對於接合毫無助益的較大的鑄疵縮孔,所以並不好。
Ag:
即使含Ag為1~20ppm,對於上述特性幾乎毫無影響,所以可因應需要來添加,但是如果超過20ppm的話,在於較低的超音波輸出下進行訂合式焊接的接合性會變低,而容易產生訂合式焊接點的剝落,所以並不太好。
〔II〕機械特性
雖然具有前述的組成分之銲線用金合金線均具有高接合可靠性、壓合金球的高真圓性、高直進性以及高耐樹脂流動性,但是如果金合金線的0.2%耐力(Pa)為σ0.2、楊格係數(Pa)為E、斷裂伸長率為EL的話,藉由以符合E≧75GPa、(σ0.2/E)≧2.2×10-3、2%≦EL≦10%的條件來製造銲線用金合金線,可具有更高的直進性以及更高的耐樹脂流動性。
其理由是,當E<75GPa的話,亦即銲線的楊格係數(Pa)較低的時候,銲線銲接後又進行模注封裝時,銲接後的金合金線會被樹脂大幅地流動(亦即,樹脂流動性很大),其結果,相隣的金合金線會彼此接觸,發生短路的次數會變高,半導體晶片的良率會降低,如果σ0.2/E變成2.2×10-3以上的話,則可急遽地提昇直進性,此外,如果斷裂伸長率未滿2%的話,抽線後的金合金線所具有的殘留變形,即使經過退火之後,依然會殘留下來,因此直進性會變低,相對地,斷裂伸長率高於10%的話,符合E<75GPa、(σ0.2/E)<2.2×10-3的情況較多,直進性會降低或者樹脂流動性會增大。
本發明中對於銲線用金合金線的斷裂伸長率EL(%)、0.2%耐力σ0.2(Pa)以及楊格係數E(Pa)的測定,係在室溫下,將銲線用金合金線在於標點間距離:100mm、拉伸速度:10mm/分的條件下,利用拉伸試驗機,進行拉
伸試驗直到拉斷為止。
此處係將應變(strain)與拉伸應力定義如下。
應變=銲線用金合金線的伸長量(mm)/100mm、拉伸應力(Pa)=拉伸荷重(N)/銲線用金合金線的初期斷面積(m2)
將斷裂伸長率EL(%)、0.2%耐力σ0.2(Pa)以及楊格係數E(Pa)定義如下。
斷裂伸長率EL(%)=斷裂時的應變×100=〔斷裂時的伸長量(mm)/100(mm)〕×100
0.2%耐力σ0.2(Pa):帶給銲線用金合金線0.2%的永久應變時的拉伸應力(Pa)
楊格係數E(Pa):拉伸應力與應變為正比的範圍內的拉伸應力與應變之比,亦即,拉伸應力(Pa)/應變
如上所述,本發明的銲線用金合金線係具有優異的接合可靠性、壓合金球的真圓性、直進性、耐樹脂流動性,如果使用這種金合金線來進行銲接的話,可帶來能夠提昇半導體裝置的良率等等產業上的優異效果。
[用以實施發明的最佳形態]
將線徑:50μm且具有表1~3所示的組成分的金合金線素材,以通過1眼模的面積縮小率為4.8%的方式進行
抽線加工,來製作出線徑:19μm的金合金線,將這種金合金線以表4~6所示的溫度進行退火而製造出本發明的銲線用金合金線(以下,稱為本發明銲線)1~27、比較銲線用金合金線(以下,稱為比較銲線)1~19以及習用銲線用金合金線(以下,稱為習用銲線)1,捲繞在半徑:50mm的中間銲線捲線筒。此處,在退火以及捲繞工程中,用來改變銲線的前進路線的滑輪全部都是半徑:9mm。將捲繞在中間銲線捲線筒的銲線,改捲繞於半徑:25mm的銲線捲線筒2000m,捨棄銲線的前端部分15m,測定銲線的斷裂伸長率EL、楊格係數(Pa)E、0.2%耐力(Pa)σ0.2,並且計算出σ0.2/E,將其結果顯示於表4~6。在進行這些的各種測定時,樣品數係5條,並求其平均值。
將具有這些表1~3所示的組成分以及表4~6所示的機械特性之本發明銲線1~27、比較銲線1~19及習用銲線1安裝在Kulicke&Soffa製的銲線銲接機(商品名稱:macsum-plus)上,對於已經搭載了半導體IC晶片的基板,以加熱溫度:150℃、迴圈長度:5mm、迴圈高度:220μm、壓合金球徑:34μm、壓合金球高度:8μm、之條件來進行銲接,藉由下列的測定來評估直進性、壓合金球的真圓性、接合可靠性以及Al銲墊有無損傷。
直進性評估:
銲墊間距:以45μm的間隔,針對各樣品都製作10000迴圈,測定相鄰的迴圈彼此互相接觸的地方的個數(接觸數),將其結果顯示於表4~6以評估直進性。
壓合金球的真圓性評估:
針對於各樣品,觀察100個壓合金球,全部都是良好的話,評定為○,只要有1個不良的話,就評定為×,將其結果顯示於表4~6,以評估金球的真圓性。
接合可靠性評估:
將銲接後的樣品,在200℃的空氣中,保管1000小時後,將掛鉤鉤住壓合金球正上方的迴圈的彎曲部,進行拉拔試驗(針對各樣品,各100個)。拉拔試驗時的斷裂,係在頸部斷裂?或是在壓合金球與Al銲墊的接合界面斷裂(金球被拉起來)?觀察壓合金球,全部都是在頸部斷裂的話,評定為○,只要有1個金球被拉起來的話,就評定為×。
Al銲墊的損傷之有無:
針對各樣品觀察100個壓合金球,以調查Al銲墊有無損傷,全部的Al銲墊都找不到損傷的話,評定為○,只要找到1個損傷的話,就評定為×。
此外,針對於具有表1~3所示的組成分以及表4~6所示的機械特性之本發明銲線1~27、比較銲線1~20以及習用銲線1,評估其迴圈高度、耐樹脂流動性。
迴圈高度:
將具有表1~3所示的組成分以及表4~6所示的機械特性之本發明銲線1~27、比較銲線1~19以及習用銲線1安裝在Kulicke&Soffa製的銲線銲接機(商品名稱:macsum-plus)上,不實施拉回地,以壓合金球徑:34μm、壓合金球高度:8μm、迴圈長度:1mm的條件來進行繞迴圈焊接,使用光學顯微鏡來測定迴圈最高部與Al銲墊面的高度,將其差值當作迴圈高度來求出,將其結果顯示於表4~6以評估迴圈高度。
耐樹脂流動性:
將搭載著以迴圈長度:3.5mm的條件進行銲接後的半導體IC的基板,使用模注封裝裝置以環氧樹脂進行封裝後,利用軟X線非破壞檢查裝置將樹脂封止後的半導體晶片內部以X線投影出來,測定20條銲線流動最大部分的流動量,將其平均值除以迴圈長度所獲得的值(%)定義為樹脂流動性,測定出這種樹脂流動性,將其結果顯示於表4~6以評估耐樹脂流動性。
從表1~6所示的結果可知,本發明銲線1~27的直進性、壓合金球的真圓性、接合可靠性、耐樹脂流動性以及耐Al銲墊損傷性均為良好,尤其是直進性、接合可靠性、壓合金球的真圓性以及耐樹脂流動性非常良好,相對地,比較銲線1~19以及習用銲線1的這些特性之中,至少有一項是不良。
Claims (10)
- 一種銲線用金合金線,其特徵為:其組成分係只由下述成分所構成:Pt以及Pd之中的1種或2種合計為5000ppm~2質量%、Ir:1~200ppm、Ca:20~200ppm、Eu:10~200ppm,及其餘部分為Au以及不可避免的雜質。
- 一種銲線用金合金線,其特徵為:其組成分係只由下述成分所構成:Pt以及Pd之中的1種或2種合計為5000ppm~2質量%、Ir:1~200ppm、Ca:20~200ppm、Eu:10~200ppm、Be:0.1~30ppm,及其餘部分為Au以及不可避免的雜質。
- 一種銲線用金合金線,其特徵為:其組成分係只由下述成分所構成:Pt以及Pd之中的1種或2種合計為5000ppm~2質量%、Ir:1~200ppm、Ca:20~200ppm、Eu:10~200ppm、 La:10~200ppm,及其餘部分為Au以及不可避免的雜質。
- 一種銲線用金合金線,其特徵為:其組成分係只由下述成分所構成:Pt以及Pd之中的1種或2種合計為5000ppm~2質量%、Ir:1~200ppm、Ca:20~200ppm、Eu:10~200ppm、Be:0.1~30ppm,La:10~200ppm,及其餘部分為Au以及不可避免的雜質。
- 一種銲線用金合金線,其特徵為:其組成分係只由下述成分所構成:Pt以及Pd之中的1種或2種合計為5000ppm~2質量%、Ir:1~200ppm、Ca:20~200ppm、Eu:10~200ppm、Ag:1~20ppm,及其餘部分為Au以及不可避免的雜質。
- 一種銲線用金合金線,其特徵為:其組成分係只由下述成分所構成:Pt以及Pd之中的1種或2種合計為5000ppm~2質量%、Ir:1~200ppm、Ca:20~200ppm、 Eu:10~200ppm、Be:0.1~30ppm、Ag:1~20ppm,及其餘部分為Au以及不可避免的雜質。
- 一種銲線用金合金線,其特徵為:其組成分係只由下述成分所構成:Pt以及Pd之中的1種或2種合計為5000ppm~2質量%、Ir:1~200ppm、Ca:20~200ppm、Eu:10~200ppm、La:10~200ppm、Ag:1~20ppm,及其餘部分為Au以及不可避免的雜質。
- 一種銲線用金合金線,其特徵為:其組成分係只由下述成分所構成:Pt以及Pd之中的1種或2種合計為5000ppm~2質量%、Ir:1~200ppm、Ca:20~200ppm、Eu:10~200ppm、Be:0.1~30ppm,La:10~200ppm、Ag:1~20ppm,及其餘部分為Au以及不可避免的雜質。
- 如申請專利範圍第1、2、3、4、5、6、7或8項 所述的銲線用金合金線,其中又含有前述Ca、Eu、Be以及La之中的1種或2種以上,合計為50~250ppm範圍內。
- 如申請專利範圍第1、2、3、4、5、6、7或8項所述的銲線用金合金線,其中銲線用金合金線的0.2%耐力Pa為σ0.2、楊格係數Pa為E、斷裂伸長率為EL的話,符合E≧75GPa、(σ0.2/E)≧2.2×10-3、2%≦EL≦10%之條件。
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JP2005173724A JP4596467B2 (ja) | 2005-06-14 | 2005-06-14 | 高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
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EP (1) | EP1901343A4 (zh) |
JP (1) | JP4596467B2 (zh) |
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JP4726205B2 (ja) * | 2005-06-14 | 2011-07-20 | 田中電子工業株式会社 | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
JP5071925B2 (ja) * | 2006-12-22 | 2012-11-14 | 田中電子工業株式会社 | 高い接合信頼性および圧着ボールの高い真円性を有し、さらにAlパッドとその下部が損傷しにくいボンディングワイヤ用金合金線 |
CN101752339B (zh) * | 2008-12-19 | 2012-12-05 | 日月光封装测试(上海)有限公司 | 接垫结构、导线接合结构及封装结构 |
JP4771562B1 (ja) * | 2011-02-10 | 2011-09-14 | 田中電子工業株式会社 | Ag−Au−Pd三元合金系ボンディングワイヤ |
US8692118B2 (en) | 2011-06-24 | 2014-04-08 | Tessera, Inc. | Reliable wire structure and method |
JP5080682B1 (ja) * | 2011-12-02 | 2012-11-21 | 田中電子工業株式会社 | 金−白金−パラジウム合金ボンディングワイヤ |
WO2014203777A1 (ja) * | 2013-06-20 | 2014-12-24 | 住友ベークライト株式会社 | 半導体装置 |
KR101687598B1 (ko) * | 2015-05-07 | 2016-12-20 | 엠케이전자 주식회사 | 은 합금 본딩 와이어 및 그의 제조 방법 |
KR101812943B1 (ko) * | 2016-10-20 | 2017-12-28 | 엠케이전자 주식회사 | 본딩 와이어 |
CN111394606B (zh) * | 2020-05-06 | 2021-03-16 | 贵研铂业股份有限公司 | 一种金基高阻合金、合金材料及其制备方法 |
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JPH11214425A (ja) * | 1998-01-23 | 1999-08-06 | Tanaka Electronics Ind Co Ltd | ワイヤボンディング用金合金線 |
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DE3887910T2 (de) * | 1987-03-20 | 1994-08-04 | Fujikura Ltd | Verfahren zur Herstellung eines Drahtes aus supraleitendem Oxid und damit hergestellter Draht. |
JPH06112251A (ja) | 1992-09-30 | 1994-04-22 | Tanaka Denshi Kogyo Kk | 半導体素子用ボンディング線 |
JPH08109425A (ja) * | 1994-08-18 | 1996-04-30 | Tanaka Denshi Kogyo Kk | ボンディング用金線 |
JP3367544B2 (ja) * | 1995-08-23 | 2003-01-14 | 田中電子工業株式会社 | ボンディング用金合金細線及びその製造方法 |
JP3628139B2 (ja) * | 1997-03-28 | 2005-03-09 | 田中電子工業株式会社 | 半導体素子ボンディング用金合金線 |
JP3654736B2 (ja) * | 1997-03-28 | 2005-06-02 | 田中電子工業株式会社 | 半導体素子ボンディング用金合金線 |
JP3633222B2 (ja) * | 1997-07-25 | 2005-03-30 | 住友金属鉱山株式会社 | ボンディングワイヤ |
JPH1145900A (ja) * | 1997-07-25 | 1999-02-16 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
JP3672063B2 (ja) * | 1997-07-25 | 2005-07-13 | 住友金属鉱山株式会社 | ボンディングワイヤ |
DE19753055B4 (de) * | 1997-11-29 | 2005-09-15 | W.C. Heraeus Gmbh | Feinstdraht aus einer Gold-Legierung, Verfahren zu seiner Herstellung und seine Verwendung |
JPH11288962A (ja) * | 1998-04-01 | 1999-10-19 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
WO2006035803A1 (ja) * | 2004-09-30 | 2006-04-06 | Tanaka Denshi Kogyo K.K. | Au合金ボンディング・ワイヤ |
JP4726206B2 (ja) * | 2005-06-14 | 2011-07-20 | 田中電子工業株式会社 | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性、高い耐樹脂流れ性および低い比抵抗を有するボンディングワイヤ用金合金線 |
JP4726205B2 (ja) * | 2005-06-14 | 2011-07-20 | 田中電子工業株式会社 | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
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EP1901343A1 (en) | 2008-03-19 |
US7678999B2 (en) | 2010-03-16 |
EP1901343A4 (en) | 2012-06-20 |
US20090120665A1 (en) | 2009-05-14 |
KR20080038125A (ko) | 2008-05-02 |
TW200704787A (en) | 2007-02-01 |
KR101087527B1 (ko) | 2011-11-28 |
CN100557784C (zh) | 2009-11-04 |
CN101248522A (zh) | 2008-08-20 |
JP4596467B2 (ja) | 2010-12-08 |
JP2006351699A (ja) | 2006-12-28 |
WO2006134823A1 (ja) | 2006-12-21 |
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