CN100557784C - 接合引线用金合金线 - Google Patents
接合引线用金合金线 Download PDFInfo
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- CN100557784C CN100557784C CNB2006800292747A CN200680029274A CN100557784C CN 100557784 C CN100557784 C CN 100557784C CN B2006800292747 A CNB2006800292747 A CN B2006800292747A CN 200680029274 A CN200680029274 A CN 200680029274A CN 100557784 C CN100557784 C CN 100557784C
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- alloy gold
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Abstract
本发明提供一种具有高接合可靠性、压接球的高真圆性、高直进性、以及高耐树脂流动性的接合引线用金合金线。该接合引线用金合金线,含有Pt及Pd中的1种或2种合计为5000ppm~2质量%、Ir:1~200ppm、Ca:20~200ppm、Eu:10~200ppm,并且,根据需要含有Be:0.1~30ppm,再根据需要含有La:10~200ppm,而且,含有Ca、Eu、Be及La中的2种以上使合计处于50~250ppm范围内。
Description
技术领域
本发明涉及一种用于连接在高温环境下,例如,温度上升到100~160℃为止的汽车发动机附近的高温环境下也可以使用的晶体管、LSI、IC等半导体元件的芯片电极和外部导线部的具有高接合可靠性、压接球的高真圆性、高直进性、以及高耐树脂流动性的接合导线用金合金线,尤其是关于线径小于20μm的细线径的,并且在高温环境下也可以使用的接合引线用金合金线。
背景技术
近年,晶体管、LSI、IC等半导体元件使用于发动机附近等的高温环境下,并且,高频用IC有其动作温度渐渐升高的倾向,因此尽管暴露在这种高温环境下也需要高度的可靠性。
作为连接使用于这种高温环境下的IC芯片上的电极和外部导线部的接合引线用金合金线,被熟知的有,成分组成为:含有Pd、Pt、Rh、Ir、Os、Ru中的至少1种合计为1000ppm~5质量%,以及Ca、Be、Ge、Si、Fe、Y、稀土类中的至少1种合计为1~50ppm,剩余为Au及不可避免的杂质的接合引线用金合金线(参照专利文献1)。这些接合引线用金合金线大量均更多地含有铂族金属而提高在高温下的压接球和Al垫片的接合强度,而且,含有Ca、Be等提高硬度而提高环路的稳定性,使用这些接合引线用金合金线连接IC芯片上的电极和外部导线部的方法有,通常主要使用将金合金线超声波并用热压接的方法。
【专利文献1】:日本专利公开平6-112251号公报
发明内容
近年,随着半导体元件的集成化的发展,半导体元件的Al垫片面积变小,在高温严酷的使用环境下需要高度的可靠性的车载用IC、或动作温度升高的高频用IC等,存在由球形接合的接合界面的接合强度的降低或由电阻的上升而发生的接合不良的问题,这些接合不良,由上述接合面积的缩小等的接合条件的恶化,越来越容易发生,从而,需要确保比以往更高的接合可靠性(在某环境下的由球形接合的接合界面的接合强度或电阻的持续性)。
而且,若球形接合下的压接球的真圆性低,则压接球的一部分从Al垫片突出,与邻接的压接球接触而发生短路不良,该短路不良,由于Al垫片面积的缩小以及接合垫片间距的缩小越来越容易发生,因此要求比以往更高的压接球的真圆性。
而且,另一方面,接合半导体元件的芯片电极和外部导线部的引线的环路部的长度(以下称环路长度)变长,同时与平行接合的邻接的环路的间隔变窄,而为了对应这种现状,作为接合引线所使用的金合金线的线径越来越细。但是,将卷绕的细线径的金合金线从卷线轴取出时,金合金线容易发生卷曲或蜿蜒(曲折或弯曲),若使用存在该卷曲或蜿蜒(曲折或弯曲)的金合金线进行接合,因与邻接的接合引线接触而发生短路,所以半导体芯片会出现次品,而成品率降低。尤其是如果由金合金而构成的接合引线线径小于20μm,则刚从卷线轴抽出的引线容易发生卷曲或蜿蜒(曲折或弯曲)。刚从卷线轴抽出的引线不发生卷曲或蜿蜒(曲折或弯曲)且接合形成的环路不与邻接的环路接触的性质就是所谓接合引线的直进性,但是,如果该直进性不足,则与邻接的环路接触,会发生短路,所以半导体装置出现次品而成品率降低。
而且,接合引线形成环路后,以树脂成型,但此时接合引线被树脂冲走,与邻接的环路接触发生短路,所以半导体装置出现次品并成品率降低。关于该树脂流动,以往的接合引线用金合金线的线径为25μm或30μm时很少发生问题,但是随着半导体元件的高集成化的发展,半导体元件的芯片电极的间隔变窄,为了对应其,将引线的线径缩小而进行接合,但是,若线径小于20μm,树脂成型时环路则容易被冲走。因此,即使线径细的引线也需要具备难以发生树脂流动的特性(以下,将该特性称为耐树脂流动性)。
对于近年的这种严格要求,专利文献1所述的接合引线用金合金线不能充分对应上述要求,对此本发明的目的在于,提供一种既能满足上述要求,又具有更高的接合可靠性、压接球的更高的真圆性、更高的直进性、以及更高的耐树脂流动性的更加出色的接合引线用金合金线。
本发明人员,为了开发具有高接合可靠性、压接球的高真圆性、高直进性、以及高耐树脂流动性的接合引线用金合金线,进行研究的结果如下:
(1)纯度:在99.999质量%的高纯度金中,含有Pt及Pd中的1种或2种合计为5000ppm~2质量%、Ir:1~200ppm,还含有Ca:20~200ppm、Eu:10~200ppm的组成的金合金线,尽管缺一点导电性,但是在汽车发动机附近的高温环境下具有高接合可靠性、压接球的高真圆性、高直进性、以及高耐树脂流动性。
(2)在具有上述(1)所述的组成的金合金线中,进一步含有Be:0.1~30ppm的金合金线,Be给Au的晶格带来应变,提高接合引线用金合金线的机械强度,降低重结晶温度,从而,可以提升环路的高度,而可以实现适当的环路高度,因此根据需要可以进行添加。
(3)在具有上述(1)所述的组成的金合金线中,进一步添加La:10~200ppm的金合金线,不但提高接合引线用金合金线的机械强度,同时提升重结晶温度,而可以降低金合金线的环路的高度,因此根据需要可以进行添加。
(4)上述Ca、Eu、Be及La,其合计为50~250ppm的范围内为更理想。
(5)具有上述高接合可靠性、压接球的高真圆性、高直进性、以及高耐树脂流动性的(1)~(4)所述的金合金线中,即使进一步含有Ag:1~20ppm,也对其特性几乎没有影响。
本发明是,基于这种研究结果所进行的,其特征在于:
(1)一种具有高接合可靠性、压接球的高真圆性、高直进性、以及高耐树脂流动性的接合引线用金合金线,其成分组成为:
含有Pt及Pd中的1种或2种合计为5000ppm~2质量%、
Ir:1~200ppm、
Ca:20~200ppm、
Eu:10~200ppm,剩余为Au及不可避免的杂质。
(2)一种具有高接合可靠性、压接球的高真圆性、高直进性、以及高耐树脂流动性的接合引线用金合金线,其成分组成为:
含有Pt及Pd中的1种或2种合计为5000ppm~2质量%、
Ir:1~200ppm、
Ca:20~200ppm、
Eu:10~200ppm,而且,
含有Be:0.1~30ppm,剩余为Au及不可避免的杂质。
(3)一种具有高接合可靠性、压接球的高真圆性、高直进性、以及高耐树脂流动性的接合引线用金合金线,其成分组成为:
含有Pt及Pd中的1种或2种合计为5000ppm~2质量%、
Ir:1~200ppm、
Ca:20~200ppm、
Eu:10~200ppm,而且,
含有La:10~200ppm,剩余为Au及不可避免的杂质。
(4)一种具有高接合可靠性、压接球的高真圆性、高直进性、以及高耐树脂流动性的接合引线用金合金线,其成分组成为:
含有Pt及Pd中的1种或2种合计为5000ppm~2质量%、
Ir:1~200ppm、
Ca:20~200ppm、
Eu:10~200ppm,而且,
含有Be:0.1~30ppm,而且,
含有La:10~200ppm,剩余为Au及不可避免的杂质。
(5)上述(1)、(2)、(3)或者(4)所述的具有高接合可靠性、压接球的高真圆性、高直进性、以及高耐树脂流动性的接合引线用金合金线,含有上述Ca、Eu、Be及La中的1种或2种以上使合计处于50~250ppm范围内。
(6)一种具有高接合可靠性、压接球的高真圆性、高直进性、以及高耐树脂流动性的接合引线用金合金线,其成分组成为;在上述(1)、(2)、(3)、(4)或者(5)所述的接合引线用金合金线,进一步含有Ag:1~20ppm的。
将具有上述(1)~(6)所述的成分组成的金合金线原材料拉丝加工至成为规定径为止,并在将得到的金合金线原材料退火的接合引线用金合金线的制造工程中,通过在比以往的退火温度低的550℃以下的温度下进行退火,若以0.2%耐力(Pa)为σ0.2、杨氏模量(Pa)为E、断裂延伸率为EL,则可以得到满足E≥75GPa、(σ0.2/E)≥2.2×10-3、2%≤EL≤10%条件的接合引线用金合金线。更优选上述金合金线原材料的拉丝加工时的单管芯的断面收缩率低于以往的断面收缩率为5%以下。满足这种条件的接合引线用金合金线,会具有更高的直进性以及更高的耐树脂流动性。
因此,本发明的特征在于,
(7)上述(1)、(2)、(3)、(4)、(5)或(6)所述的具有高接合可靠性、压接球的高真圆性、高直进性、以及高耐树脂流动性的接合引线用金合金线,若将接合引线用金合金线的0.2%耐力(Pa)为σ0.2、杨氏模量(Pa)为E、断裂延伸率为EL,则满足以下条件,
E≥75GPa、
(σ0.2/E)≥2.2×10-3、
2%≤EL≤10%。
接着,在本发明的具有高接合可靠性、压接球的高真圆性、高直进性、以及高耐树脂流动性的接合引线用金合金线,以下说明将成分组成及机械特性限定为如上述的理由。
[I]成分组成
(a)Pt、Pd:
Pt及Pd是,皆与Au一起完全固溶的元素,具有可抑制压接球和Al垫片的接合强度的劣化这一提高接合可靠性的效果。在接合界面附近包含Pt或Pd的相以层状生成,由于其相作为降低Au的扩散速度的层(所谓对Au扩散的阻挡层)而起作用,因此抑制随着Au的扩散在接合部发生的空隙的生成速度,其结果,认为抑制压接球和Al垫片的接合强度的劣化而提高接合可靠性。Pt或Pd的量越多该接合强度的劣化的抑制(提高接合可靠性)效果就越高。但是,Pt及Pd中的1种或者2种的合计小于5000ppm,接合强度劣化的抑制效果则被限定,因此不优选,另一方面,若含有Pt及Pd中的1种或2种的合计超过2质量%,则球的硬度过高而接合时会产生IC芯片的破裂或损伤,因此不优选。所以,将Pt及Pd中的1种或2种的合计规定为5000ppm~2质量%。
(b)Ir:
Ir具有抑制高温下的金合金的粒成长(结晶粒的粗大化)的作用,因此,形成无空气球时,由于来自球部的热的影响,具有下述效果:防止球正上方的引线部(热影响部)的结晶粒粗大化,同时凝固的无空气球部由大量微细的结晶粒形成,在接合时压接球以辐射状均等地扩散,具有提高压接球的真圆性的效果,但是,Ir的含量小于1ppm得不到规定的效果,另一方面,含有Pt及Pd中的1种或2种合计为5000ppm~2质量%的接合引线用金合金线,即使Ir超过200ppm,上述效果也饱和,不但得不到由添加引起的效果的明确地提高,而且,球的硬度增高,则发生IC芯片的破坏或损伤,因此不优选。因此,将Ir的含量规定为1~200ppm。
(c)Ca:
碱土类金属Ca的金属结合半径比Au的金属结合半径大,给Au的晶格带来应变,提高接合引线用金合金线的机械强度及无空气球的加工硬化性,进而具有提升重结晶温度、降低金合金线的环路高度的效果,但是,Ca的含量小于20ppm下,由于强度低,因此难以满足E≥75GPa、(σ0.2/E)≥2.2×10-3、2%≤EL≤10%的条件而直进性和耐树脂流动性变低,所以不优选。另一方面,Ca的含量超过200ppm,则含有Pt及Pd中的1种或2种合计为5000ppm~2质量%的接合引线用金合金线的球的硬度变高,进行接合时发生IC芯片的破裂或损伤,而且在进行球形接合时形成的无空气球的表面上生成大量的氧化物,而且,在无空气球的底部中央形成不能有助于接合的大缩孔,所以不优选。因此,将Ca的含量规定为20~200ppm。
(d)Eu:
稀土类元素Eu的金属结合半径比Au的金属结合半径大,给Au的晶格带来应变,提高接合引线用金合金线的机械强度及无空气球的加工硬化性,同时具有提升重结晶温度、降低金合金线的环路高度的效果,Eu的金属结合半径与其他的稀土类元素相比特别大,所以虽然上述效果非常高,但是,Eu的含量小于10ppm下,由于机械强度低,因此难以满足E≥75GPa、(σ0.2/E)≥2.2×10-3、2%≤EL≤10%的条件而直进性和耐树脂流动性变低,所以不优选。另一方面,Eu的含量超过200ppm,则含有Pt及Pd中的1种或2种合计为5000ppm~2质量%的接合引线用金合金线的球的硬度变高,则发生IC芯片的破裂或损伤,或者在进行球形接合时形成的无空气球的表面上生成大量的氧化物,而且,在无空气球的底部中央形成不能有助于接合的大缩孔,所以不优选。因此,将Eu的含量规定为10~200ppm。
(e)Be:
Be的金属结合半径比Au的金属结合半径小,也给Au的晶格带来弯曲,提高接合引线用金合金线的机械强度及无空气球的加工硬化性,含有上述Ca及Eu的同时含有Be时,具有降低重结晶温度的效果,从而,可以提升环路高度,由此可以实现适当的环路高度,所以根据需要添加Be,但是即使添加Be小于0.1ppm也得不到规定的效果,另一方面,含有Be超过30ppm,则含有Pt及Pd中的1种或2种合计为5000ppm~2质量%的接合引线用金合金线的球的硬度增高,在进行接合时发生IC芯片的破裂或损伤,而且,在无空气球的表面产生大量氧化物,而且,在无空气球的底部中央形成不能有助于接合的大缩孔,而且,产生球的正上方部及球部的结晶粒径的增大而降低压接球部的真圆性,因此不优选。因此,将Be的含量规定为0.1~30ppm。
(f)La:
La提高接合引线用金合金线的机械强度及无空气球的加工硬化性,同时具有提升重结晶温度、降低金合金线的环路高度的效果,所以根据需要添加,但是即使含有La小于10ppm也得不到规定的效果,另一方面,含有La超过200ppm,则含有Pt及Pd中的1种或2种合计为5000ppm~2质量%的接合引线用金合金线的球的硬度变高,进行接合时发生IC芯片的破裂或损伤,而且在进行球形接合时形成的无空气球的表面上生成大量的氧化物,而且在无空气球的底部中央形成不能有助于接合的大缩孔,所以不优选。因此,将La的含量规定为10~200ppm。
(g)50≤Ca+Eu+Be+La≤250
在含有Pt及Pd中的1种或2种合计为5000ppm~2质量%的接合引线用金合金线中,Ca、Eu、Be及La的合计在50~250ppm范围内为宜。其理由为,在Ca、Eu、Be及La的合计小于50ppm下,由于强度低,因此难以实现E≥75GPa、(σ0.2/E)≥2.2×10-3、2%≤EL≤10%,结果直进性和耐树脂流动性变低,所以不优选。另一方面,Ca、Eu、Be及La的合计超过250ppm,则含有Pt及Pd中的1种或2种合计为5000ppm~2质量%的接合引线用金合金线的球的硬度增高,在进行接合时发生IC芯片的破裂或损伤,而且,在进行接合时形成的无空气球的表面上生成大量的氧化物,而且,在无空气球的底部中央形成不能有助于接合的大缩孔,所以不优选。
Ag:
即使含有1~20ppm的Ag,也对上述特性几乎没有影响,而根据需要添加,但是超过20ppm则在低超声波输出的针脚式接合的接合性变低,而不会发生针脚式接合的剥落,所以不优选。
[II]机械特性
具有上述成分组成的接合引线用金合金线皆具有高接合可靠性、压接球的高真圆性、高直进性、以及高耐树脂流动性,但是通过制造成以金合金线的0.2%耐力(Pa)为σ0.2、杨氏模量(Pa)为E、断裂延伸率为EL,且满足E≥75GPa、(σ0.2/E)≥2.2×10-3、2%≤EL≤10%的条件的接合引线用金合金线,从而会具有更高的直进性及更高的耐树脂流动性。
其理由为,E<75GPa时,即引线的杨氏模量(Pa)低时,引线接合后的成型之际,接合的金合金线被树脂大大地冲走(即、树脂流动大),其结果,邻接的金合金线相接触,而短路的频度增高,半导体芯片的成品率降低,如果σ0.2/E达到2.2×10-3以上则直进性急剧提高,并且,断裂延伸率小于2%时,因为拉丝后的金合金线具有的残留应变在退火后也残存,故直进性降低,另一方面,断裂延伸率高于10%时,成为E<75GPa、(σ0.2/E)<2.2×10-3的情况多,而直进性降低、或树脂流动增大。
在本发明,接合引线用金合金线的断裂延伸率EL(%)、0.2%耐力σ0.2(Pa)及杨氏模量E(Pa)的测定由以下进行:在室温下,将接合引线用金合金线在标距:100mm、拉伸速度:10mm/分的条件下由拉伸试验机拉伸到断裂为止。
在此,将应变和拉伸应力定义为如下。
应变=接合引线用金合金线的延伸(mm)/100mm、
拉伸应力(Pa)=拉伸负荷(N)/接合引线用金合金线的初始截面面积(m2)
将断裂延伸率为EL(%)、0.2%耐力σ0.2(Pa)及杨氏模量E(Pa)定义为如下。
断裂延伸率EL(%)=断裂时的应变×100=[断裂时的延伸(mm)/100(mm)]×100
0.2%耐力σ0.2(Pa):给接合引线用金合金线带来0.2%的永久应变时的拉伸应力(Pa)
杨氏模量E(Pa):在拉伸应力和应变正比例的范围,拉伸应力和应变的比、即拉伸应力(Pa)/应变
如上述,本发明的接合引线用金合金线,的接合可靠性、压接球的真圆性、直进性、耐树脂流动性出色,使用该金合金线进行接合,可以提高半导体装置的成品率等,在产业上带来出色的效果。
具体实施方式
将具有线径50μm、及表1~3所示的成分组成的金合金线原材料,以单管芯的断面收缩率4.8%进行拉丝加工,制作线径19μm的金合金线,通过将该金合金线在表4~6所示的温度进行退火,制造本发明接合引线用金合金线(以下、称本发明引线)1~27、比较接合引线用金合金线(以下、称比较引线)1~19、及以往接合引线用金合金线(以下,称以往引线)1,并卷绕在半径50mm的中间卷线轴上。在此,在退火及卷绕工程,为了改变引线的进路而使用的滑车轮(滑车)皆为半径9mm。将卷绕在中间卷轴的引线在半径25mm的卷轴卷绕2000m,除掉引线的前端15m,测定引线的断裂延伸率EL、杨氏模量(Pa)E、0.2%耐力(Pa)σ0.2,并且,算出σ0.2/E,将其结果表示在表4~6。在这些各测定中,将样品数为5个,求出了其平均值。
将具有这些表1~3所示的成分组成及表4~6所示的机械特性的本发明的引线1~27、比较引线1~20及以往引线1,安装在Kulicke&Soffa制的引线接合器(MaxumPlus)上,在载有半导体IC芯片的基板上,以
加热温度:150℃、
环路长度:5mm、
环路高度:220μm、
压接球径:34μm、
压接球高度:8μm、
的条件下进行接合,通过进行下述的测定,进行有关直进性、压接球的真圆性、接合可靠性、及Al垫片的损伤与否的评价。
直进性评价:
以垫片间距45μm的间隔对每个样品制作10000环路,测定邻接的环路彼此的接触处的数量(接触数),将其结果表示在表4~6而评价直进性。
压接球的真圆性评价:
对每个样品观察100个压接球,全部良好时○、若有1个或1个以上不良时×、将其结果表示在表4~6而评价球的真圆性。
接合可靠性评价:
将接合的样品,在200℃的空气中保管1000小时之后,在压接球正上方的环路的弯曲(扭折)挂上工具而进行了拉力试验(每个样品100个)。拉力试验中的断裂,或者在颈部断裂,或者在压接球和Al垫片的接合界面断裂(球上升)。观察压接球,全部在颈部断裂时评价为○,若有1个或1个以上的球上升时评价为×。
Al垫片的损伤与否
每个样品观察100个压接球调查Al垫片的损伤与否,全部的Al垫片没有损伤时评价为○,若发现1个或1个以上的损伤时则评价为×。
并且,关于具有表1~3所示的成分组成及表4~6所示的机械特性的本发明引线1~27、比较引线1~20及以往引线1,对环路高度、耐树脂流动性进行评价。
环路高度:
将具有表1~3所示的成分组成及表4~6所示的机械特性的本发明引线1~27、比较引线1~20及以往引线1安装在Kulicke&Soffa制的引线接合器(MaxumPlus)上,不进行倒转、在压接球径34μm、压接球高度8μm、环路长度1mm的条件下进行成环路,用光学显微镜,测定环路最高部和Al垫片面的高度,将其差作为环路高度而求出,通过其结果表示在4~6而评价环路高度。
耐树脂流动性:
将搭载以环路长度3.5mm的条件下接合的半导体IC芯片的基板,用成型装置以环氧树脂密封后,用软X射线非破坏检查装置对树脂密封的半导体芯片内部进行X射线投影,测定20根引线流动最大的部分的流量,将其平均值除以环路长度的值(%)定义为树脂流动,测定该树脂流动,通过将其结果表示在表4~6而评价耐树脂流动性。
【表1】
【表2】
*表示脱离本发明范围的值。
【表3】
*表示脱离本发明范围的值。
从表1~6所示的结果可知,本发明引线1~27直进性、压接球的真圆性、接合可靠性、耐树脂流动性及耐Al垫片损伤性良好,尤其是直进性、接合可靠性、压接球的真圆性及耐树脂流动性良好,相反,比较引线1~19及以往引线1在这些特性中的至少任何1个为不良。
Claims (7)
1.一种接合引线用金合金线,其特征在于:
其成分组成为:含有Pt及Pd中的1种或2种合计为5000ppm~2质量%、
Ir:1~200ppm、
Ca:20~200ppm、
Eu:10~200ppm,
剩余为Au及不可避免的杂质。
2.一种接合引线用金合金线,其特征在于:
其成分组成为:含有Pt及Pd中的1种或2种合计为5000ppm~2质量%、
Ir:1~200ppm、
Ca:20~200ppm、
Eu:10~200ppm,而且,
含有Be:0.1~30ppm,
剩余为Au及不可避免的杂质。
3.一种接合引线用金合金线,其特征在于:
其成分组成为:含有Pt及Pd中的1种或2种合计为5000ppm~2质量%、
Ir:1~200ppm、
Ca:20~200ppm、
Eu:10~200ppm,而且,
含有La:10~200ppm,
剩余为Au及不可避免的杂质。
4.一种接合引线用金合金线,其特征在于:
其成分组成为:含有Pt及Pd中的1种或2种合计为5000ppm~2质量%、
Ir:1~200ppm、
Ca:20~200ppm、
Eu:10~200ppm,而且,
含有Be:0.1~30ppm,还,
含有La:10~200ppm,
剩余为Au及不可避免的杂质。
5.根据权利要求1、2、3或4所述的接合引线用金合金线,其特征在于:含有合计为50~250ppm的上述Ca、Eu、Be及La中的1种或2种以上使。
6.根据权利要求1、2、3或4所述的接合引线用金合金线,其特征在于:还含有Ag:1~20ppm。
7.根据权利要求1、2、3或4所述的接合引线用金合金线,其特征在于:
若接合引线用金合金线的0.2%耐力为σ0.2、杨氏模量为E、断裂延伸率为EL,则满足以下条件,
E≥75GPa、
(σ0.2/E)≥2.2×10-3、
2%≤EL≤10%
其中,0.2%耐力σ0.2和杨氏模量E的单位为Pa。
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JP2005173724A JP4596467B2 (ja) | 2005-06-14 | 2005-06-14 | 高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
JP173724/2005 | 2005-06-14 |
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CN101248522A CN101248522A (zh) | 2008-08-20 |
CN100557784C true CN100557784C (zh) | 2009-11-04 |
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US (1) | US7678999B2 (zh) |
EP (1) | EP1901343A4 (zh) |
JP (1) | JP4596467B2 (zh) |
KR (1) | KR101087527B1 (zh) |
CN (1) | CN100557784C (zh) |
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WO (1) | WO2006134823A1 (zh) |
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JP4726205B2 (ja) * | 2005-06-14 | 2011-07-20 | 田中電子工業株式会社 | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
JP5071925B2 (ja) * | 2006-12-22 | 2012-11-14 | 田中電子工業株式会社 | 高い接合信頼性および圧着ボールの高い真円性を有し、さらにAlパッドとその下部が損傷しにくいボンディングワイヤ用金合金線 |
CN101752339B (zh) * | 2008-12-19 | 2012-12-05 | 日月光封装测试(上海)有限公司 | 接垫结构、导线接合结构及封装结构 |
JP4771562B1 (ja) * | 2011-02-10 | 2011-09-14 | 田中電子工業株式会社 | Ag−Au−Pd三元合金系ボンディングワイヤ |
US8692118B2 (en) | 2011-06-24 | 2014-04-08 | Tessera, Inc. | Reliable wire structure and method |
JP5080682B1 (ja) * | 2011-12-02 | 2012-11-21 | 田中電子工業株式会社 | 金−白金−パラジウム合金ボンディングワイヤ |
JP6341203B2 (ja) * | 2013-06-20 | 2018-06-13 | 住友ベークライト株式会社 | 半導体装置 |
KR101687598B1 (ko) * | 2015-05-07 | 2016-12-20 | 엠케이전자 주식회사 | 은 합금 본딩 와이어 및 그의 제조 방법 |
KR101812943B1 (ko) * | 2016-10-20 | 2017-12-28 | 엠케이전자 주식회사 | 본딩 와이어 |
CN111394606B (zh) * | 2020-05-06 | 2021-03-16 | 贵研铂业股份有限公司 | 一种金基高阻合金、合金材料及其制备方法 |
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EP0283313B1 (en) * | 1987-03-20 | 1994-02-23 | Fujikura Ltd. | Method of producing oxide superconducting wire and oxide superconducting wire produced by this method |
JPH06112251A (ja) | 1992-09-30 | 1994-04-22 | Tanaka Denshi Kogyo Kk | 半導体素子用ボンディング線 |
JPH08109425A (ja) * | 1994-08-18 | 1996-04-30 | Tanaka Denshi Kogyo Kk | ボンディング用金線 |
JP3367544B2 (ja) * | 1995-08-23 | 2003-01-14 | 田中電子工業株式会社 | ボンディング用金合金細線及びその製造方法 |
JP3628139B2 (ja) * | 1997-03-28 | 2005-03-09 | 田中電子工業株式会社 | 半導体素子ボンディング用金合金線 |
JP3654736B2 (ja) * | 1997-03-28 | 2005-06-02 | 田中電子工業株式会社 | 半導体素子ボンディング用金合金線 |
JP3633222B2 (ja) * | 1997-07-25 | 2005-03-30 | 住友金属鉱山株式会社 | ボンディングワイヤ |
JPH1145900A (ja) * | 1997-07-25 | 1999-02-16 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
JP3672063B2 (ja) * | 1997-07-25 | 2005-07-13 | 住友金属鉱山株式会社 | ボンディングワイヤ |
DE19753055B4 (de) * | 1997-11-29 | 2005-09-15 | W.C. Heraeus Gmbh | Feinstdraht aus einer Gold-Legierung, Verfahren zu seiner Herstellung und seine Verwendung |
JP3810200B2 (ja) * | 1998-01-23 | 2006-08-16 | 田中電子工業株式会社 | ワイヤボンディング用金合金線 |
JPH11288962A (ja) * | 1998-04-01 | 1999-10-19 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
EP1811555A4 (en) * | 2004-09-30 | 2012-06-20 | Tanaka Electronics Ind | AU-ALLOY BOND WIRE |
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JP4726205B2 (ja) * | 2005-06-14 | 2011-07-20 | 田中電子工業株式会社 | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
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TW200704787A (en) | 2007-02-01 |
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TWI401323B (zh) | 2013-07-11 |
JP2006351699A (ja) | 2006-12-28 |
KR101087527B1 (ko) | 2011-11-28 |
EP1901343A1 (en) | 2008-03-19 |
US20090120665A1 (en) | 2009-05-14 |
JP4596467B2 (ja) | 2010-12-08 |
CN101248522A (zh) | 2008-08-20 |
US7678999B2 (en) | 2010-03-16 |
KR20080038125A (ko) | 2008-05-02 |
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