JP3672063B2 - ボンディングワイヤ - Google Patents

ボンディングワイヤ Download PDF

Info

Publication number
JP3672063B2
JP3672063B2 JP19951297A JP19951297A JP3672063B2 JP 3672063 B2 JP3672063 B2 JP 3672063B2 JP 19951297 A JP19951297 A JP 19951297A JP 19951297 A JP19951297 A JP 19951297A JP 3672063 B2 JP3672063 B2 JP 3672063B2
Authority
JP
Japan
Prior art keywords
wire
weight
less
bonding
bonding wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP19951297A
Other languages
English (en)
Other versions
JPH1145899A (ja
Inventor
寿一 清水
秀人 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP19951297A priority Critical patent/JP3672063B2/ja
Publication of JPH1145899A publication Critical patent/JPH1145899A/ja
Application granted granted Critical
Publication of JP3672063B2 publication Critical patent/JP3672063B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01038—Strontium [Sr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01044—Ruthenium [Ru]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01063—Europium [Eu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01076—Osmium [Os]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20756—Diameter ranges larger or equal to 60 microns less than 70 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20757—Diameter ranges larger or equal to 70 microns less than 80 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20758—Diameter ranges larger or equal to 80 microns less than 90 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20759—Diameter ranges larger or equal to 90 microns less than 100 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は半導体素子上の電極と外部リードとを接続するために用いるボンディングワイヤに関する。
【０００２】
【従来の技術】
ＩＣ，ＬＳＩなどの半導体素子（チップ）の電極と外部リードとを接続するため直径０．０２〜０．１ｍｍのボンディングワイヤが用いられている。このボンディングワイヤには良好な導電性、チップや外部リードとの接合性、使用雰囲気中での耐環境性が要求される。そのため、ボンディングワイヤとしてはＡｌ，Ａｕ，Ｃｕ等の純金属もしくはその合金が用いられている。近年では低コスト化という観点から樹脂を用いた半導体パッケージが多用されてきており、そのため耐環境性に優れるＡｕ系ワイヤが最も多く用いられている。
【０００３】
最近の半導体デバイスの発展はパッケージの多ピン化をもたらし、その結果として、より細いワイヤを用いて狭いピッチで長い距離のワイヤボンディングを行う必要性が増してきた。しかしながら、従来のＡｕ系ボンディングワイヤで線経をより細くするとワイヤ強度が弱いため、樹脂封入を始めとする半導体デバイス組み立て工程中においてワイヤの変形不良が頻発化し、半導体デバイスの組み立て収率が大幅に低下するという問題があった。
【０００４】
こうした問題を解決する手段として、例えば特公昭６２―２２４５０、特公昭６２―２２４５１等で示されているように、多量のＡｇを添加してワイヤ強度を高めるという方法が提案されている。しかし、Ａｇを多量に添加したワイヤは半導体素子上の電極との接合信頼性が低くなり、実際の半導体パッケージに使用することは困難である。
【０００５】
【発明が解決しようとする課題】
本発明の目的は、かかる点に鑑み、Ａｇを多量に含むＡｕ系ワイヤの接合信頼性を向上させ、多ピン半導体デバイス用として好適な高強度ボンディングワイヤを提供することにある。
【０００６】
【課題を解決するための手段】
上記の目的を達成するために、本発明のボンディングワイヤは、第一にＡｇ を２０〜４０ 重量%（以下単に％と記す）を含み、さらにＰｄを０ ．１を超えて５ ％以下を含み、残部がＡｕ 及び不可避不純物からなる点に特徴があり、第二にＡｇ を２０ 〜４０%を含み、Ｐｄ を０ ．１を超えて５ ％以下を含み、さらにＳｒ ，Ｃｅ 、Ｇｅ 、Ｉｎ 、Ｓｎ の１ 種以上を０ ．０００１ 〜０ ．０１ ％含み、残部がＡｕ 及び不可避不純物からなる点に特徴があり、第三にＡｇ を２０〜４０%を含み、Ｐｄ を０ ．１を超えて５ ％以下を含み、さらにＣｕ 、Ｐｔ 、Ｒｕ 、Ｏｓ 、Ｒｈ 、Ｉｒ の内の１ 種以上を合計で０ ．１ を超えて３%以下であり、かつ、Ｒｕ又はＩｒの内、少なくとも一つ以上を含有する場合は、Ｒｕ又はＩｒの内で含有される元素の含有割合についてはそれぞれ０ ．０００１〜０．０５ 重量％の範囲の含有を除き、残部がＡｕ 及び不可避不純物からなる点に特徴があり、第四にＡｇ を２０ 〜４０%を含み、Ｐｄ を０ ．１ を超えて５ ％以下を含み、Ｓｒ ，Ｃｅ 、Ｇｅ 、Ｉｎ 、Ｓｎ の１ 種以上を０ ．０００１ 〜０ ．０１ ％含み、さらにＣｕ 、Ｐｔ 、Ｒｕ 、Ｏｓ 、Ｒｈ 、Ｉｒ の内の１ 種以上を合計で０ ．１ を超えて３%以下を含み、残部がＡｕ 及び不可避不純物からなる点に特徴がある。
【０００７】
【発明の実施の形態】
以下に本発明の構成について詳細に説明する。
【０００８】
Ａｇ は金に固溶することによりワイヤ強度を向上させる元素である。Ａｇ の濃度を２０ 〜４０ ％としたのは、２０ ％未満では強度向上の効果が不十分であり、逆に４０ ％を超すと強度向上の効果が低下するだけでなく、耐食性が低下してプラスチックパッケージ中で使用するのが難しくなるからである。
【０００９】
Ｐｄ は、その機構は不明であるが、Ａｇ を多量に含むＡｕ 系ワイヤの接合信頼性を向上させる元素である。Ｐｄ の濃度を０ ．１ を超えて５ ％以下としたのは、０ ．１％以下では接合信頼性向上効果が不充分だからであり、逆に５ ％を超えると効果が飽和するからである。
【００１０】
第二および第四の発明に用いるＳｒ，Ｃｅ 、Ｇｅ 、Ｓｎ 、Ｉｎ はワイヤの耐熱性やルーピング性を向上するための添加元素である。 Ｓｒ ，Ｃｅ 、Ｇｅ 、Ｓｎ 、Ｉｎ の１ 種以上を合計量で０ ．０００１ 〜０ ．０１ ％としたのは、０ ．０００１ ％未満では添加による耐熱性の向上効果が不十分であり、逆に０ ．０１ ％を超えると接合性の低下が起こるからである。
【００１１】
また、第三および第四の発明に用いるＣｕ 、Ｐｔ 、Ｒｕ 、Ｏｓ 、Ｒｈ 、Ｉｒ はワイヤ強度をさらに向上させる元素である。Ｃｕ 、Ｐｔ 、Ｒｕ 、Ｏｓ 、Ｒｈ 、Ｉｒ の内の１ 種以上を合計量で０ ．１ を超えて３%以下としたのは、０ ．１ ％以下では添加効果が不十分であり、逆に３ ％を超えるとワイヤの加工性や接合性が低下するからである。
【００１２】
【実施例】
次に実施例を用いて本発明をさらに説明する。
【００１３】
（実施例１ 〜１０ ）純度９９ ．９９９ ％の金、９９ ．９９ ％のＰｄ 、Ａｇ 、Ｃｕ 、Ｐｔ、Ｒｕ 、Ｏｓ 、Ｒｈ 、Ｉｒ 、及び所定の添加元素を１ ％含む金母合金を用いて、表１ に示す組成の金合金を溶解鋳造した。
【００１４】
【表１】
【００１５】
このように作製された試料の評価として、ワイヤ強度は引張り試験により求めた。ボンディング接合性すなわちボンディングワイヤと半導体素子の電極及び外部リードとの接合性は、ステージ温度２５０℃で超音波熱圧着方式によりボンディングしたワイヤについて、フックを引っかけて引張り試験を実施した場合に、破断がワイヤの部分で起こった場合を良、接合部で破断した場合を不良と評価した。
【００１６】
樹脂の封入抵抗によるワイヤ変形については、上記と同様な方法で５ｍｍの間隔にワイヤボンディングした試料について、モールド機（トランスファーモールド型）によりエポキシ樹脂（住友ベークライト製、EME-6300）を金型温度１８０℃、射出圧１００Ｋｇ／ｃｍ2の条件でモールドした時のワイヤの流れ量をＸ線透過装置により撮影したＸ線写真から求め、その値で評価した。
【００１７】
ボンディング接合部分の耐環境信頼性については、上記と同様な方法でワイヤボンディングと樹脂封入した試料について、１７５℃の電気炉中に２００時間保持した場合のワイヤ接合部の電気抵抗値を測定し、保持前に比較して電気抵抗値の変化が認められなかった場合を良、電気抵抗値の増加が起こった場合を不良と評価した。
【００１８】
表２に上記評価の結果を示した。
【００１９】
【表２】
【００２０】
第２，４表において明らかなように、本発明によるボンディングワイヤは、市販品に比較して強度が高く、ワイヤ流れ量が小さい。また、比較材と比べるとボンディング接合部の耐環境性が良好であり、接合性にも問題の無いことがわかる。
【００２１】
【発明の効果】
以上から明らかなように、本発明により、半導体デバイス組み立て時におけるワイヤの変形不良が起こりにくく、かつ接合信頼性も良好である多ピン半導体デバイス用として好適なボンディングワイヤを提供することができる。

Claims (4)

  1. Ａｇ が２０ 〜４０ 重量％、Ｐｄが０ ．１を超えて５ 重量％以下、残部がＡｕ 及び不可避不純物からなることを特徴とするボンディングワイヤ。
  2. Ａｇ が２０ 〜４０ 重量％、Ｐｄが０ ．１を超えて５ 重量％以下、Ｓｒ、Ｃｅ、Ｇｅ、Ｉｎ、Ｓｎ の内の１ 種以上が合計量で０ ．０００１〜０ ．０１ 重量％、残部がＡｕ 及び不可避不純物からなることを特徴とするボンディングワイヤ。
  3. Ａｇ が２０ 〜４０ 重量％、Ｐｄが０ ．１を超えて５ 重量％以下、Ｃｕ、Ｐｔ、Ｒｕ、Ｏｓ、Ｒｈ、Ｉｒ の内の１ 種以上が合計量で０ ．１を超えて３ 重量％以下であり、かつ、Ｒｕ又はＩｒの内、少なくとも一つ以上を含有する場合は、Ｒｕ又はＩｒの内で含有される元素の含有割合についてはそれぞれ０．０００１〜０．０５ 重量％の範囲の含有を除き、残部がＡｕ 及び不可避不純物からなることを特徴とするボンディングワイヤ。
  4. Ａｇ が２０ 〜４０ 重量％、Ｐｄが０ ．１を超えて５ 重量％以下、Ｓｒ、Ｃｅ、Ｇｅ、Ｉｎ、Ｓｎ の内の１ 種以上が合計量で０ ．０００１〜０ ．０１ 重量％、さらにＣｕ、Ｐｔ、Ｒｕ、Ｏｓ、Ｒｈ、Ｉｒ の内の１ 種以上が合計量で０ ．１を超えて３ 重量％以下、残部がＡｕ 及び不可避不純物からなることを特徴とするボンディングワイヤ。
JP19951297A 1997-07-25 1997-07-25 ボンディングワイヤ Expired - Fee Related JP3672063B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19951297A JP3672063B2 (ja) 1997-07-25 1997-07-25 ボンディングワイヤ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19951297A JP3672063B2 (ja) 1997-07-25 1997-07-25 ボンディングワイヤ

Publications (2)

Publication Number Publication Date
JPH1145899A JPH1145899A (ja) 1999-02-16
JP3672063B2 true JP3672063B2 (ja) 2005-07-13

Family

ID=16409060

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19951297A Expired - Fee Related JP3672063B2 (ja) 1997-07-25 1997-07-25 ボンディングワイヤ

Country Status (1)

Country Link
JP (1) JP3672063B2 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4596467B2 (ja) 2005-06-14 2010-12-08 田中電子工業株式会社 高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線
JP4726206B2 (ja) * 2005-06-14 2011-07-20 田中電子工業株式会社 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性、高い耐樹脂流れ性および低い比抵抗を有するボンディングワイヤ用金合金線
JP4726205B2 (ja) 2005-06-14 2011-07-20 田中電子工業株式会社 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線
JP4793989B2 (ja) * 2006-03-29 2011-10-12 田中電子工業株式会社 高い初期接合性、高い接合信頼性および圧着ボールの高い真円性を有するボンディングワイヤ用金合金線
CN105908002B (zh) * 2016-04-22 2018-05-01 汕头市骏码凯撒有限公司 一种金合金键合丝及其制造方法
CN107665874A (zh) * 2017-09-07 2018-02-06 汕头市骏码凯撒有限公司 一种包覆金的金合金复合键合丝及其制造方法
CN108091631A (zh) * 2017-12-13 2018-05-29 汕头市骏码凯撒有限公司 具有金包覆层的金合金复合键合丝及其制造方法
CN108796269A (zh) * 2018-06-30 2018-11-13 汕头市骏码凯撒有限公司 金合金键合丝及其制造方法
CN110117733A (zh) * 2019-04-30 2019-08-13 汕头市骏码凯撒有限公司 一种金银合金键合丝及其制造方法
EP4245871A1 (fr) * 2022-03-18 2023-09-20 Nivarox-FAR S.A. Alliage d'or

Also Published As

Publication number Publication date
JPH1145899A (ja) 1999-02-16

Similar Documents

Publication Publication Date Title
JPH11288962A (ja) ボンディングワイヤ
KR20130141337A (ko) Ａｇ-Ａｕ-Ｐｄ 3원 합금계 본딩 와이어
US20100319872A1 (en) Manufacturing method for composite alloy bonding wire
JP5064577B2 (ja) ボールボンディング用ワイヤ
CN100557784C (zh) 接合引线用金合金线
JP3672063B2 (ja) ボンディングワイヤ
JP4130843B1 (ja) 高信頼性金合金ボンディングワイヤ及び半導体装置
CN100550332C (zh) 接合引线用金合金线
JP3633222B2 (ja) ボンディングワイヤ
JPH1145900A (ja) ボンディングワイヤ
JP5996853B2 (ja) ボールボンディング用ワイヤ
JP3628139B2 (ja) 半導体素子ボンディング用金合金線
JP3550812B2 (ja) ボンディングワイヤ
JP3786324B2 (ja) ボンディングワイヤ
CN111656501B (zh) 接合线
JPH11126788A (ja) Ｉｃチップ接続用金合金線
JP3744131B2 (ja) ボンディングワイヤ
JPS6222448B2 (ja)
JP3426397B2 (ja) 半導体素子用金合金細線
JP5080682B1 (ja) 金−白金−パラジウム合金ボンディングワイヤ
JP3484823B2 (ja) ボンディングワイヤ
JP3426473B2 (ja) 半導体素子用金合金細線
JPH10313018A (ja) ボンディングワイヤ
JPH10321662A (ja) ボンディングワイヤ
JPH0717976B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040113

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040907

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040913

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20041202

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050128

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050224

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050308

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050331

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050413

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080428

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090428

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090428

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100428

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100428

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110428

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110428

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120428

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130428

Year of fee payment: 8

LAPS Cancellation because of no payment of annual fees