JPH1145899A - ボンディングワイヤ - Google Patents

ボンディングワイヤ

Info

Publication number
JPH1145899A
JPH1145899A JP9199512A JP19951297A JPH1145899A JP H1145899 A JPH1145899 A JP H1145899A JP 9199512 A JP9199512 A JP 9199512A JP 19951297 A JP19951297 A JP 19951297A JP H1145899 A JPH1145899 A JP H1145899A
Authority
JP
Japan
Prior art keywords
wire
bonding
bonding wire
unavoidable impurities
strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9199512A
Other languages
English (en)
Other versions
JP3672063B2 (ja
Inventor
Juichi Shimizu
寿一 清水
Hideto Yoshida
秀人 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP19951297A priority Critical patent/JP3672063B2/ja
Publication of JPH1145899A publication Critical patent/JPH1145899A/ja
Application granted granted Critical
Publication of JP3672063B2 publication Critical patent/JP3672063B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/45099—Material
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)

Abstract

(57)【要約】 【課題】 多ピン半導体デバイス用として好適な高
強度ボンディングワイヤを提供することを課題とする。 【解決手段】 ボンディングワイヤの組成をＡｇを１〜
４０重量%（以下単に％と記す）、Ｐｄを０．１〜５
％、残部がＡｕ及び不可避不純物とし、好ましくはＡｇ
を１〜４０%、Ｐｄを０．１〜５％、さらにＣａ，Ｓｒ
，Ｙ，Ｌａ，Ｃｅ、Ｅｕ、Ｂｅ、Ｇｅ、Ｉｎ、Ｓｎの
１種以上を０．０００１〜０．０１％、残部がＡｕ及び
不可避不純物とし、あるいはＡｇ１〜４０%、Ｐｄを
０．１〜５％、さらにＣｕ、Ｐｔ、Ｒｕ、Ｏｓ、Ｒｈ、
Ｉｒの内の１種以上を０．１〜３%、残部がＡｕ及び不
可避不純物とし、またあるいはＡｇを１〜４０%、Ｐｄ
を０．１〜５％、Ｃａ，Ｓｒ ，Ｙ，Ｌａ，Ｃｅ、Ｅ
ｕ、Ｂｅ、Ｇｅ、Ｉｎ、Ｓｎの１種以上を０．０００１
〜０．０１％、さらにＣｕ、Ｐｔ、Ｒｕ、Ｏｓ、Ｒｈ、
Ｉｒの内の１種以上を合計で０．１〜３%、残部がＡｕ
及び不可避不純物とする。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は半導体素子上の電極
と外部リードとを接続するために用いるボンディングワ
イヤに関する。
【０００２】
【従来の技術】ＩＣ，ＬＳＩなどの半導体素子（チッ
プ）の電極と外部リードとを接続するため直径０．０２
〜０．１ｍｍのボンディングワイヤが用いられている。
このボンディングワイヤには良好な導電性、チップや外
部リードとの接合性、使用雰囲気中での耐環境性が要求
される。そのため、ボンディングワイヤとしてはＡｌ，
Ａｕ，Ｃｕ等の純金属もしくはその合金が用いられてい
る。近年では低コスト化という観点から樹脂を用いた半
導体パッケージが多用されてきており、そのため耐環境
性に優れるＡｕ系ワイヤが最も多く用いられている。
【０００３】最近の半導体デバイスの発展はパッケージ
の多ピン化をもたらし、その結果として、より細いワイ
ヤを用いて狭いピッチで長い距離のワイヤボンディング
を行う必要性が増してきた。しかしながら、従来のＡｕ
系ボンディングワイヤで線経をより細くするとワイヤ強
度が弱いため、樹脂封入を始めとする半導体デバイス組
み立て工程中においてワイヤの変形不良が頻発化し、半
導体デバイスの組み立て収率が大幅に低下するという問
題があった。
【０００４】こうした問題を解決する手段として、例え
ば特公昭６２―２２４５０、特公昭６２―２２４５１等
で示されているように、多量のＡｇを添加してワイヤ強
度を高めるという方法が提案されている。しかし、Ａｇ
を多量に添加したワイヤは半導体素子上の電極との接合
信頼性が低くなり、実際の半導体パッケージに使用する
ことは困難である。
【０００５】
【発明が解決しようとする課題】本発明の目的は、かか
る点に鑑み、Ａｇを多量に含むＡｕ系ワイヤの接合信頼
性を向上させ、多ピン半導体デバイス用として好適な高
強度ボンディングワイヤを提供することにある。
【０００６】
【課題を解決するための手段】上記の目的を達成するた
めに、本発明のボンディングワイヤは、第一にＡｇを１
〜４０重量%（以下単に％と記す）を含み、さらにＰｄ
を０．１〜５％を含み、残部がＡｕ及び不可避不純物か
らなる点に特徴があり、第二にＡｇを１〜４０%を含
み、Ｐｄを０．１〜５％を含み、さらにＣａ，Ｓｒ ，
Ｙ，Ｌａ，Ｃｅ、Ｅｕ、Ｂｅ、Ｇｅ、Ｉｎ、Ｓｎの１種
以上を０．０００１〜０．０１％含み、残部がＡｕ及び
不可避不純物からなる点に特徴があり、第三にＡｇを１
〜４０%を含み、Ｐｄを０．１〜５％を含み、さらにＣ
ｕ、Ｐｔ、Ｒｕ、Ｏｓ、Ｒｈ、Ｉｒの内の１種以上を合
計で０．１〜３%を含み、残部がＡｕ及び不可避不純物
からなる点に特徴があり、第四にＡｇを１〜４０%を含
み、Ｐｄを０．１〜５％を含み、Ｃａ，Ｓｒ ，Ｙ，Ｌ
ａ，Ｃｅ、Ｅｕ、Ｂｅ、Ｇｅ、Ｉｎ、Ｓｎの１種以上を
０．０００１〜０．０１％含み、さらにＣｕ、Ｐｔ、Ｒ
ｕ、Ｏｓ、Ｒｈ、Ｉｒの内の１種以上を合計で０．１〜
３%を含み、残部がＡｕ及び不可避不純物からなる点に
特徴がある。
【０００７】
【発明の実施の形態】以下に本発明の構成について詳細
に説明する。
【０００８】Ａｇは金に固溶することによりワイヤ強度
を向上させる元素である。Ａｇの濃度を１〜４０％とし
たのは、１％未満では強度向上の効果が不十分であり、
逆に４０％を超すと強度向上の効果が低下するだけでな
く、耐食性が低下してプラスチックパッケージ中で使用
するのが難しくなるからである。
【０００９】Ｐｄは、その機構は不明であるが、Ａｇを
多量に含むＡｕ系ワイヤの接合信頼性を向上させる元素
である。Ｐｄの濃度を０．１〜５％としたのは、０．１
％未満では接合信頼性向上効果が不充分だからであり、
逆に５％を超えると効果が飽和するからである。
【００１０】第二および第四の発明に用いるＣａ，Ｓｒ
，Ｙ，Ｌａ，Ｃｅ、Ｅｕ、Ｂｅ、Ｇｅ、Ｓｎ、Ｉｎは
ワイヤの耐熱性やルーピング性を向上するための添加元
素である。Ｃａ，Ｓｒ ，Ｙ，Ｌａ，Ｃｅ、Ｅｕ、Ｂ
ｅ、Ｇｅ、Ｓｎ、Ｉｎの１種以上を合計量で０．０００
１〜０．０１％としたのは、０．０００１％未満では添
加による耐熱性の向上効果が不十分であり、逆に０．０
１％を超えると接合性の低下が起こるからである。
【００１１】また、第三および第四の発明に用いるＣ
ｕ、Ｐｔ、Ｒｕ、Ｏｓ、Ｒｈ、Ｉｒはワイヤ強度をさら
に向上させる元素である。Ｃｕ、Ｐｔ、Ｒｕ、Ｏｓ、Ｒ
ｈ、Ｉｒの内の１種以上を合計量で０．１〜３%とした
のは、０．１％未満では添加効果が不十分であり、逆に
３％を超えるとワイヤの加工性や接合性が低下するから
である。
【００１２】
【実施例】次に実施例を用いて本発明をさらに説明す
る。
【００１３】（実施例１〜１７）純度９９．９９９％の
金、９９．９９％のＰｄ、Ａｇ、Ｃｕ、Ｐｔ、Ｒｕ、Ｏ
ｓ、Ｒｈ、Ｉｒ、及び所定の添加元素を１％含む金母合
金を用いて、表１に示す組成の金合金を溶解鋳造した。
【００１４】 得られた鋳塊を溝ロール加工を施し、ダイヤモンドダイ
スを用いた伸線加工を施して直径０．０２５ｍｍの合金
線とした。得られた合金線は熱処理を施すことによって
特性を調整して試料とした。
【００１５】このように作製された試料の評価として、
ワイヤ強度は引張り試験により求めた。ボンディング接
合性すなわちボンディングワイヤと半導体素子の電極及
び外部リードとの接合性は、ステージ温度２５０℃で超
音波熱圧着方式によりボンディングしたワイヤについ
て、フックを引っかけて引張り試験を実施した場合に、
破断がワイヤの部分で起こった場合を良、接合部で破断
した場合を不良と評価した。
【００１６】樹脂の封入抵抗によるワイヤ変形について
は、上記と同様な方法で５ｍｍの間隔にワイヤボンディ
ングした試料について、モールド機（トランスファーモ
ールド型）によりエポキシ樹脂（住友ベークライト製、
EME-6300）を金型温度１８０℃、射出圧１００Ｋｇ／ｃ
ｍ2の条件でモールドした時のワイヤの流れ量をＸ線透
過装置により撮影したＸ線写真から求め、その値で評価
した。
【００１７】ボンディング接合部分の耐環境信頼性につ
いては、上記と同様な方法でワイヤボンディングと樹脂
封入した試料について、１７５℃の電気炉中に２００時
間保持した場合のワイヤ接合部の電気抵抗値を測定し、
保持前に比較して電気抵抗値の変化が認められなかった
場合を良、電気抵抗値の増加が起こった場合を不良と評
価した。
【００１８】表２に上記評価の結果を示した。
【００１９】 （比較例１〜４）市販材（比較例４）と比較材を用いた
以外は実施例と同様にして評価した。表３に金合金の組
成、表４に特性を示した。
【００２０】 第２，４表において明らかなように、本発明によるボン
ディングワイヤは、市販品に比較して強度が高く、ワイ
ヤ流れ量が小さい。また、比較材と比べるとボンディン
グ接合部の耐環境性が良好であり、接合性にも問題の無
いことがわかる。
【００２１】
【発明の効果】以上から明らかなように、本発明によ
り、半導体デバイス組み立て時におけるワイヤの変形不
良が起こりにくく、かつ接合信頼性も良好である多ピン
半導体デバイス用として好適なボンディングワイヤを提
供することができる。

Claims (4)

    【特許請求の範囲】
  1. 【請求項１】 Ａｇが１〜４０%、Ｐｄが０．１〜５
    ％、残部がＡｕ及び不可避不純物からなるボンディング
    ワイヤ。
  2. 【請求項２】 Ａｇが１〜４０%、Ｐｄが０．１〜５
    ％、Ｃａ，Ｓｒ ，Ｙ，Ｌａ，Ｃｅ、Ｅｕ、Ｂｅ、Ｇ
    ｅ、Ｉｎ、Ｓｎの内の１種以上が合計量で０．０００１
    〜０．０１％、残部がＡｕ及び不可避不純物からなるボ
    ンディングワイヤ。
  3. 【請求項３】 Ａｇが１〜４０%、Ｐｄが０．１〜５
    ％、Ｃｕ、Ｐｔ、Ｒｕ、Ｏｓ、Ｒｈ、Ｉｒの内の１種以
    上が合計量で０．１〜３%、残部がＡｕ及び不可避不純
    物からなるボンディングワイヤ。
  4. 【請求項４】 Ａｇが１〜４０%、Ｐｄが０．１〜５
    ％、Ｃａ，Ｓｒ ，Ｙ，Ｌａ，Ｃｅ、Ｅｕ、Ｂｅ、Ｇ
    ｅ、Ｉｎ、Ｓｎの内の１種以上が合計量で０．０００１
    〜０．０１％、さらにＣｕ、Ｐｔ、Ｒｕ、Ｏｓ、Ｒｈ、
    Ｉｒの内の１種以上が合計量で０．１〜３%、残部がＡ
    ｕ及び不可避不純物からなるボンディングワイヤ。
JP19951297A 1997-07-25 1997-07-25 ボンディングワイヤ Expired - Fee Related JP3672063B2 (ja)

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WO2006134823A1 (ja) * 2005-06-14 2006-12-21 Tanaka Denshi Kogyo K.K. 高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線
WO2006134825A1 (ja) * 2005-06-14 2006-12-21 Tanaka Denshi Kogyo K.K. 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性、高い耐樹脂流れ性および低い比抵抗を有するボンディングワイヤ用金合金線
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WO2006134825A1 (ja) * 2005-06-14 2006-12-21 Tanaka Denshi Kogyo K.K. 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性、高い耐樹脂流れ性および低い比抵抗を有するボンディングワイヤ用金合金線
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