WO2006134825A1 - 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性、高い耐樹脂流れ性および低い比抵抗を有するボンディングワイヤ用金合金線 - Google Patents
高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性、高い耐樹脂流れ性および低い比抵抗を有するボンディングワイヤ用金合金線 Download PDFInfo
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- WO2006134825A1 WO2006134825A1 PCT/JP2006/311525 JP2006311525W WO2006134825A1 WO 2006134825 A1 WO2006134825 A1 WO 2006134825A1 JP 2006311525 W JP2006311525 W JP 2006311525W WO 2006134825 A1 WO2006134825 A1 WO 2006134825A1
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- bonding
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- gold alloy
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- resistance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
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Definitions
- the present invention relates to a high initial bonding property, high bonding reliability, high roundness of a press-bonded ball, and high straightness that are used to connect a chip electrode of a semiconductor element such as a transistor, LSI, or IC to an external lead It relates to gold alloy wire for bonding wire with high grease flow resistance and low specific resistance, especially low temperature force, wide temperature range up to high temperature (for example, wide temperature range of -20 ⁇ 60 ° C) It relates to a gold alloy wire for bonding wires having a wire diameter of less than 20 ⁇ m that can be used in
- a gold alloy wire for bonding wire is formed by bonding a gold alloy wire for bonding wire with thermocompression bonding using ultrasonic waves.
- a gold alloy wire for bonding wire used at this time Containing at least one of Pd, Pt, Rh, Ir, Os, Ru 3 ⁇ 1 OOOppm, Eu: 1 ⁇ 30ppm, at least one of Be, Ca, Ge, Sr containing l ⁇ 30ppm, the balance Gold alloy wires having a composition composed of Au and inevitable impurities (see Patent Document 1) are known.
- Patent Document 1 JP-A-8-109425
- the roundness of the press-bonded ball in ball bonding is low! A part of the press-bonded ball protrudes from the A lead, and a short circuit failure occurs due to contact with the adjacent press-bonded ball. This contact failure is more likely to occur as the A-lead area is reduced and the bonding pad pitch is reduced, so that a higher roundness of the pressure-bonded ball is required than before.
- the loop length the length of the loop portion of the wire joining the chip electrode of the semiconductor element and the external lead portion (hereinafter referred to as the loop length) is increased and the adjacent loop bonded in parallel with each other The interval is narrowing. It is required to make the wire diameter of the gold alloy wire to be used as a bonding wire that can cope with the current situation. As the force wire diameter is reduced, the wound gold alloy wire is removed from the spool.
- Curling and meandering are likely to occur in the gold alloy wire when it is taken out, and if bonding is performed using a gold alloy wire that has this curling or meandering (bending or bending), the adjacent bonding Since the wires come into contact with each other and are short-circuited, defective semiconductor chips are generated and the yield is lowered.
- the wire diameter of the bonding wire made of a gold alloy is less than 20 m
- curling and meandering (bending and bending) are likely to occur in the wire immediately after being fed out of the spool.
- the curl and meandering (bending and bending) do not occur in the wire immediately after the spool force is fed out, and the loop formed by bonding does not contact the adjacent loop!
- this straightness is insufficient, the adjacent loop is contacted and short-circuited, resulting in a defective semiconductor device and a decrease in yield.
- the resistance of the gold alloy wire itself is preferably as low as possible from the viewpoint of heat generation and high-frequency driving.
- the wire diameter of the gold alloy wire becomes thinner and the loop becomes longer, so that the resistance of the gold alloy wire tends to increase. For this reason, a gold alloy wire for bonding wires having a low specific resistance while satisfying the above-described characteristics has been demanded.
- the gold alloy wire for bonding wires described in Patent Document 1 has the disadvantages of low workability of free air balls and low initial bondability.
- Gold alloy wire for bonding wire that can meet the requirements is obtained.
- the present invention provides a superior gold alloy for bonding wires having such a high initial bondability, high bond reliability, high roundness of a press-bonded ball, high straightness, high resistance to grease flow and low specific resistance. The purpose is to provide a line.
- the present inventors have developed a bonding wire having high initial bondability, high bonding reliability, high roundness of a press-bonded ball, high V, straight running, high, grease flow resistance and low, and specific resistance. As a result of research to develop gold alloy wire,
- High-purity gold contains one or two of Pt and Pd in total less than 500-1000 ppm, Ir: 1-: LOOppm, and Ca and Eu.
- Gold alloy wire with a composition containing more Ca: 30 to 100 ppm and Eu: 30 to 10 Oppm than conventional gold alloy wires for bonding wires has high initial bondability, high bonding reliability, Has high roundness, high straightness, high grease flow resistance and low specific resistance,
- a gold alloy wire having a composition of the above-mentioned (mouth) and further containing one or more of La, Ba, Sr, Bi or a total of 30 to LOOppm. Can increase the mechanical strength of the gold alloy wire for bonding wire and work hardening of the free air ball, increase the recrystallization temperature, and reduce the loop height of the gold alloy wire,
- Eu contains more than 30 ⁇ lOOppm
- Be Contains 0.1 to 20ppm, the remainder is composed of Au and inevitable impurities. High initial bondability, high bonding reliability, high roundness of crimped ball, high straightness, high resistance Gold alloy wire for bonding wire with low oil flow and low resistivity
- Eu contains more than 30 ⁇ lOOppm
- Be contains 0.1 to 20 ppm
- High-level initial bondability and high-level bond reliability with a total composition of 30 to 100 ppm of one or more of La, Ba, Sr, and Bi, with the remainder consisting of Au and unavoidable impurities , Gold alloy wire for bonding wire with high roundness of crimped ball, high straightness, high grease flow resistance and low specific resistance,
- a process for producing a gold alloy wire for bonding wire in which a gold alloy wire material having the composition described in (1) to (4) is drawn until a predetermined diameter is obtained, and the resulting gold alloy wire material is annealed.
- the annealing temperature is 550 ° C or lower, which is lower than the conventional annealing temperature, 0.2% resistance (Pa) is ⁇ , Young's modulus (Pa) is ⁇ , and elongation at break is ⁇ . , E ⁇ 75G
- a gold alloy wire can be manufactured. It is even more preferable that the area reduction rate by one die during the wire drawing of the gold alloy wire material is lower than the conventional area reduction rate and not more than 5%.
- the gold alloy wire for bonding wire that satisfies the powerful conditions of the gold alloy wire has higher straightness and higher resistance to grease flow.
- Pt and Pd are both elements that are solid-dissolved with Au, and have the effect of improving the bonding reliability by suppressing the deterioration of the bonding strength between the press-bonded ball and the A lead.
- a phase containing Pt and Pd is formed in the vicinity of the bonding interface, and the phase acts as a layer 0 that reduces the diffusion rate of Au (a barrier layer against so-called Au diffusion). It is considered that the generation rate of voids generated at the joint is suppressed, and as a result, the deterioration of the joint strength between the press-bonded ball and the A lead is suppressed and the joint reliability is improved.
- the effect of suppressing the deterioration of the bonding strength becomes higher as the amount of Pt and Pd increases.
- the total of one or two of Pt and Pd is less than 500 ppm, the effect of suppressing the deterioration of the bonding strength cannot be obtained. If it is contained above, the resistance of the gold alloy wire is increased, which is not preferable. Therefore, the total of one or two of Pt and Pd was determined to be less than 500 to 1000 ppm.
- Ir has the effect of suppressing the grain growth (grain coarsening) of the gold alloy at a high temperature. Therefore, when forming a free air ball, it is directly above the ball due to the heat of the ball part.
- the wire part heat-affected zone
- the solidified free air ball part is formed with a number of fine crystal grain forces. Force that has the effect of improving roundness If the Ir content is less than lp pm, the desired effect cannot be obtained.
- bonding that contains 500 to 1000 ppm of one or two of Pt and Pd in total In the gold alloy wire for wire, the above effect is saturated even if Ir exceeds ⁇ m, and there is no clear improvement in the effect due to the additive. This is not preferable because the IC chip is destroyed or damaged. Therefore, the content of Ir is set to 1 to: LOOppm.
- Ca an alkaline earth metal, distorts the crystal lattice of Au, whose metal bond radius is larger than that of Au, thereby improving the mechanical strength of the gold alloy wire for bonding wires and the work hardening of free air balls. Strength that increases the recrystallization temperature and lowers the loop height of the gold alloy wire.
- the Ca content is 30ppm or less, the workability of the free air ball is low and the initial bondability is low.
- the Ca content is determined to be over 30 to lOOppm.
- Eu a rare earth element, distorts the Au crystal lattice, whose metal bond radius is larger than that of Au, and improves the mechanical strength of gold alloy wires for bonding wires and the work hardenability of free air balls.
- This has the effect of increasing the recrystallization temperature and lowering the loop height of the gold alloy wire, and the metal bond radius of Eu is particularly large compared to other rare earth elements. : Less than 20 m)
- the above effect is very high for gold alloy wires for bonding wires, but when the Eu content is 30 ppm or less, the workability of free air balls is low!
- the strength is low, it becomes difficult to satisfy the conditions of E ⁇ 75GPa, ( ⁇ ⁇ ) ⁇ 2.2 ⁇ 10 _3 , 2% ⁇ 10 ⁇ 10%.
- the Eu content is determined to be over 30 to lOOppm.
- Be also distorts the Au crystal lattice, whose metal bond radius is smaller than the metal bond radius of Au, and improves the mechanical strength of the gold alloy wire for bonding wire and the work hardenability of the free air ball.
- Be When Be is contained together with Eu, it has the effect of lowering the recrystallization temperature, so the loop height can be increased, so that an appropriate loop height can be realized. Even if added less than 0 ppm, the desired effect cannot be obtained. On the other hand, if Be exceeds 20 ppm, a large amount of acid is generated on the surface of the free air ball, and free air is further added.
- the content of Be is set to 0.1 to 20 ppm.
- the rare earth element La, the alkaline earth metals Ba and Sr, and the periodic table group 5B Bi also increase the mechanical strength of the gold alloy wire for bonding wire and the work hardenability of the free air ball, and recrystallize. Because it has the effect of raising the temperature and lowering the loop height of the gold alloy wire, the required effect cannot be obtained even if at least one of La, Ba, Sr, and Bi is added at less than 30 ppm. On the other hand, if at least one of La, Ba, Sr, and Bi is contained in excess of ⁇ pm, a large amount of oxide is generated on the surface of the free air ball formed during ball bonding.
- the content of at least one of La, Ba, Sr, and Bi is set to 30 to 100 ppm.
- X 10 — 3 is often the force that decreases the straightness or increases the flow of greaves.
- strain and tensile stress are defined as follows.
- Elongation at break E (%), 0.2% resistance to ⁇ (Pa) and Young's modulus E (Pa) are as follows:
- the gold alloy wire for bonding wire according to the present invention has excellent initial bondability, bonding reliability, roundness of the press-bonded ball, straightness, grease flow resistance and low specific resistance. Therefore, when bonding is performed using this gold alloy wire, it is possible to improve the yield of semiconductor devices and bring about excellent industrial effects.
- a gold alloy wire having a diameter of 19 m was prepared, and the gold alloy wire was annealed at a temperature shown in Tables 4 to 6 to produce a gold alloy wire for a bonding wire of the present invention (hereinafter referred to as the present invention wire) 1 to 34
- Gold alloy wires for comparative bonding wires (hereinafter referred to as comparative wires) 1 to 20 and gold alloy wires for conventional bonding wires (hereinafter referred to as conventional wires) 1 were manufactured and wound on an intermediate spool having a radius of 50 mm.
- all the sheaves (pulleys) used to change the course of the wire in the annealing and scraping processes have a radius of 9 mm.
- the wire wound on the intermediate spool is wound up to 2000m on a spool with a radius of 25mm, the tip of the wire is discarded 15m, and the breaking elongation rate of the wire E
- the wire composition of the present invention having the composition shown in Tables 1 to 3 and the mechanical properties shown in Tables 4 to 6, the comparative wires 1 to 20 and the conventional wire 1 are combined with a wire bonder manufactured by Kulicke & Soffa ( Set to Maxam Plus) and heated to 150 ° C on a substrate with a semiconductor IC chip mounted.
- a wire bonder manufactured by Kulicke & Soffa Set to Maxam Plus
- Norep length 5mm
- Norep height 220 ⁇ m
- Crimp ball diameter 34 / ⁇ ⁇
- Crimp ball height 8 m ⁇
- Bonding was performed under the conditions described above, and the following measurements were performed to evaluate straightness, initial bondability, and roundness of the pressed ball.
- Pad pitch 10000 loops were made on each sample at 45 ⁇ m intervals, the number of contact points between adjacent loops (number of contacts) was measured, and the results are shown in Tables 4 to 6 for straightness. evaluated.
- the present invention wires 1-34, comparative wires 1-20 and conventional wires 1 having the composition shown in Tables 1-3 and the mechanical properties shown in Tables 4-6 are connected to a wire bob made by Kulicke & Sofia. Set on the der (Maxam Plus) and do not reverse, rub the crimped ball diameter: 34 m, pressure ball height: 8 m, loop length: 1 mm! Using an optical microscope, The height of the highest part of the loop and the height of the A 3 / d surface was measured, the difference was obtained as the loop height, and the results were shown in Tables 4 to 6 to evaluate the loop height.
- Loop length 3.5 mm
- the substrate on which the semiconductor IC chip is bonded is sealed with epoxy grease using a molding device, and then sealed with a soft X-ray non-destructive inspection device.
- the X-ray projection of the inside of the semiconductor chip was performed, and the flow rate of 20 parts where the wire flow was maximum was measured.
- the average value divided by the loop length (%) was defined as the resin flow.
- the oil flow was measured, and the results were shown in Tables 4 to 6 to evaluate the grease flow resistance.
- the wires 1 to 34 of the present invention have good straightness, initial bondability, roundness of the press-bonded ball, bonding reliability and grease flow resistance with small specific resistance, In particular, straight wire, initial bondability, bond reliability, roundness of crimped balls and grease flow resistance are good, but comparative wires 1 to 20 and conventional wire 1 have at least these characteristics! It turns out that one becomes defective.
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/917,228 US20090232695A1 (en) | 2005-06-14 | 2006-06-08 | Gold alloy wire for bonding wire having high initial bondability, high bonding reliability, high roundness of compression ball, high straightness, high resin flowability resistance, and low specific resistance |
EP06766498A EP1909317A4 (en) | 2005-06-14 | 2006-06-08 | GOLD ALLOY CABLE USABLE AS A CONNECTION CABLE HAVING HIGH INITIAL CONNECTION CAPACITY, HIGH RELIABILITY OF CONNECTION, HIGH CIRCULARITY OF THE PRESS CONNECTED BALL, RECTILIG ADVANCED PROPERTY |
KR1020087000927A KR101087526B1 (ko) | 2005-06-14 | 2006-06-08 | 높은 초기 접합성, 높은 접합 신뢰성, 압착 볼의 높은진원성, 높은 직진성, 높은 내수지 흐름성 및 낮은비저항을 갖는 본딩 와이어용 금 합금선 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005173726A JP4726206B2 (ja) | 2005-06-14 | 2005-06-14 | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性、高い耐樹脂流れ性および低い比抵抗を有するボンディングワイヤ用金合金線 |
JP2005-173726 | 2005-06-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006134825A1 true WO2006134825A1 (ja) | 2006-12-21 |
Family
ID=37532188
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2006/311525 WO2006134825A1 (ja) | 2005-06-14 | 2006-06-08 | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性、高い耐樹脂流れ性および低い比抵抗を有するボンディングワイヤ用金合金線 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090232695A1 (ja) |
EP (1) | EP1909317A4 (ja) |
JP (1) | JP4726206B2 (ja) |
KR (1) | KR101087526B1 (ja) |
CN (1) | CN100550332C (ja) |
TW (1) | TW200703532A (ja) |
WO (1) | WO2006134825A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4596467B2 (ja) * | 2005-06-14 | 2010-12-08 | 田中電子工業株式会社 | 高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
JP4726205B2 (ja) * | 2005-06-14 | 2011-07-20 | 田中電子工業株式会社 | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
JP5240890B2 (ja) * | 2006-08-07 | 2013-07-17 | 田中電子工業株式会社 | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高いループ制御性および低い比抵抗を有するボンディングワイヤ用金合金線 |
US8767351B1 (en) * | 2013-01-31 | 2014-07-01 | Seagate Technology Llc | Ambient temperature ball bond |
CN109599381A (zh) * | 2018-11-30 | 2019-04-09 | 合肥中晶新材料有限公司 | 一种固定比例金基/银基键合线及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08109425A (ja) * | 1994-08-18 | 1996-04-30 | Tanaka Denshi Kogyo Kk | ボンディング用金線 |
JPH10275820A (ja) * | 1997-03-28 | 1998-10-13 | Tanaka Denshi Kogyo Kk | 半導体素子ボンディング用金合金線 |
JPH1145901A (ja) * | 1997-07-25 | 1999-02-16 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
JPH1145900A (ja) * | 1997-07-25 | 1999-02-16 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
JPH1145899A (ja) * | 1997-07-25 | 1999-02-16 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3367544B2 (ja) * | 1995-08-23 | 2003-01-14 | 田中電子工業株式会社 | ボンディング用金合金細線及びその製造方法 |
JP3654736B2 (ja) * | 1997-03-28 | 2005-06-02 | 田中電子工業株式会社 | 半導体素子ボンディング用金合金線 |
DE19753055B4 (de) * | 1997-11-29 | 2005-09-15 | W.C. Heraeus Gmbh | Feinstdraht aus einer Gold-Legierung, Verfahren zu seiner Herstellung und seine Verwendung |
JP3810200B2 (ja) * | 1998-01-23 | 2006-08-16 | 田中電子工業株式会社 | ワイヤボンディング用金合金線 |
-
2005
- 2005-06-14 JP JP2005173726A patent/JP4726206B2/ja not_active Expired - Fee Related
-
2006
- 2006-06-08 CN CNB2006800292041A patent/CN100550332C/zh not_active Expired - Fee Related
- 2006-06-08 KR KR1020087000927A patent/KR101087526B1/ko not_active IP Right Cessation
- 2006-06-08 WO PCT/JP2006/311525 patent/WO2006134825A1/ja active Application Filing
- 2006-06-08 EP EP06766498A patent/EP1909317A4/en not_active Withdrawn
- 2006-06-08 US US11/917,228 patent/US20090232695A1/en not_active Abandoned
- 2006-06-09 TW TW095120690A patent/TW200703532A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08109425A (ja) * | 1994-08-18 | 1996-04-30 | Tanaka Denshi Kogyo Kk | ボンディング用金線 |
JPH10275820A (ja) * | 1997-03-28 | 1998-10-13 | Tanaka Denshi Kogyo Kk | 半導体素子ボンディング用金合金線 |
JPH1145901A (ja) * | 1997-07-25 | 1999-02-16 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
JPH1145900A (ja) * | 1997-07-25 | 1999-02-16 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
JPH1145899A (ja) * | 1997-07-25 | 1999-02-16 | Sumitomo Metal Mining Co Ltd | ボンディングワイヤ |
Non-Patent Citations (1)
Title |
---|
See also references of EP1909317A4 * |
Also Published As
Publication number | Publication date |
---|---|
EP1909317A4 (en) | 2012-06-20 |
JP4726206B2 (ja) | 2011-07-20 |
JP2006351701A (ja) | 2006-12-28 |
EP1909317A1 (en) | 2008-04-09 |
KR101087526B1 (ko) | 2011-11-28 |
TW200703532A (en) | 2007-01-16 |
CN100550332C (zh) | 2009-10-14 |
CN101238564A (zh) | 2008-08-06 |
US20090232695A1 (en) | 2009-09-17 |
KR20080041622A (ko) | 2008-05-13 |
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