Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
  • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
  • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
  • B23K35/24—Selection of soldering or welding materials proper
  • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
  • B23K35/3013—Au as the principal constituent
• • C—CHEMISTRY; METALLURGY
  • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
  • C22C—ALLOYS
  • C22C5/00—Alloys based on noble metals
  • C22C5/02—Alloys based on gold
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/42—Wire connectors; Manufacturing methods related thereto
  • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
  • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
  • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/02—Bonding areas; Manufacturing methods related thereto
  • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
  • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
  • H01L2224/0554—External layer
  • H01L2224/05599—Material
  • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
  • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
  • H01L2224/05624—Aluminium [Al] as principal constituent
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
  • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
  • H01L2224/45001—Core members of the connector
  • H01L2224/4501—Shape
  • H01L2224/45012—Cross-sectional shape
  • H01L2224/45015—Cross-sectional shape being circular
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
  • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
  • H01L2224/45001—Core members of the connector
  • H01L2224/45099—Material
  • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
  • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
  • H01L2224/45144—Gold (Au) as principal constituent
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
  • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L2224/42—Wire connectors; Manufacturing methods related thereto
  • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
  • H01L2224/485—Material
  • H01L2224/48505—Material at the bonding interface
  • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
  • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
  • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
  • H01L2224/48624—Aluminium (Al) as principal constituent
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
  • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
  • H01L24/42—Wire connectors; Manufacturing methods related thereto
  • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
  • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01004—Beryllium [Be]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01005—Boron [B]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01013—Aluminum [Al]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/0102—Calcium [Ca]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01028—Nickel [Ni]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01032—Germanium [Ge]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01033—Arsenic [As]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01038—Strontium [Sr]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01044—Ruthenium [Ru]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01045—Rhodium [Rh]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01046—Palladium [Pd]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01047—Silver [Ag]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01056—Barium [Ba]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01057—Lanthanum [La]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01063—Europium [Eu]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01075—Rhenium [Re]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01076—Osmium [Os]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01077—Iridium [Ir]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01078—Platinum [Pt]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01079—Gold [Au]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01082—Lead [Pb]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/01—Chemical elements
  • H01L2924/01083—Bismuth [Bi]
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/011—Groups of the periodic table
  • H01L2924/01105—Rare earth metals
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/012—Semiconductor purity grades
  • H01L2924/01205—5N purity grades, i.e. 99.999%
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/10—Details of semiconductor or other solid state devices to be connected
  • H01L2924/11—Device type
  • H01L2924/14—Integrated circuits
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
  • H01L2924/1901—Structure
  • H01L2924/1904—Component type
  • H01L2924/19043—Component type being a resistor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/20—Parameters
  • H01L2924/207—Diameter ranges
  • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/20—Parameters
  • H01L2924/207—Diameter ranges
  • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns

Definitions

• the present invention relates to a gold alloy wire for a bonding wire that is used to connect a chip electrode of a semiconductor element such as a transistor, LSI, or IC to an external lead part and has high initial bonding ability, high bonding reliability, high roundness of a compression ball, high straightness, high resin flowability resistance, and low specific resistance.
• the invention relates to a gold alloy wire for wire bonding that can be used in a wide temperature range from low temperature to high temperature (for example, in the range of ⁇ 20 to 60° C.) and has a diameter less than 20 ⁇ m.
• a gold alloy wire having the following composition has been known as a gold alloy wire for a bonding wire used in this case.
• the composition of the gold alloy wire includes at least one of Pd, Pt, Rh, Ir, Os, and Ru of 3 to 1000 ppm, Eu of 1 to 30 ppm, at least one of Be, Ca, Ge, and Sr of 1 to 30 ppm, and a balance being Au and inevitable impurities (see Japanese Unexamined Patent Application, First Publication No. Hei 08-109425.)
• the decrease of bonding strength due to a ball bonding or the occurrence of bonding failures due to a rise of electrical resistance in the bonding interface has caused problems in an automobile IC for requiring a high reliability at the severe use environments of a high-temperature and a high frequency IC in which the operating temperature is increased. Since the bonding failure is apt to gradually occur due to the deterioration of bonding conditions, such as a low temperature joint or a shrinking of the bonding areas, it is required to ensure the bonding reliability (persistence of the bonding strength or electrical resistance due to the ball bonding in the bonding interface at some environments) higher than that of the related art.
• the roundness of the compression balls is low at the ball bonding, a portion of the compression balls are protruded from the Al pad, and a short failure occurs by the contact of a neighboring compression ball. Since the contact failure is increasingly apt to occur by the shrinking of the Al pad area and a bonding pad pitch, it is required that the roundness of the compression ball is higher than that of the related art compression ball.
• the length of a wire loop (hereinafter, referred to as a loop length) for joining the chip electrodes of the semiconductor devices to the outer lead becomes long, the distance between the wire loop and a neighboring loop parallel to the wire loop becomes narrow.
• a loop length the length of a wire loop for joining the chip electrodes of the semiconductor devices to the outer lead becomes long, the distance between the wire loop and a neighboring loop parallel to the wire loop becomes narrow.
• the bad semiconductor chips are produced to reduce the yield ratio. More particularly, when the diameter of the bonding wire made of the gold alloy is less than 20 ⁇ m, the curling or meandering (curvature or bending) may easily occur in the wire directly after being unreeled from the spool.
• the property of which the loop formed by the bonding without the occurrence of the curling or meandering (curvature or bending) in the wire directly after being unreeled from the spool does not contact to the neighboring loop is referred to as the straightness. When the straightness is insufficient, since the loop contacts to the neighboring loop and shorts out, the bad semiconductor devices are produce to reduce the yield ratio.
• the loop is formed by bonding the wire, and then being molded by the resin.
• the bonding wire is influenced by the resin, since the bonding wire contacts to the neighboring loop and shorts out, the bad semiconductor devices are produced to reduce the yield ratio.
• the resin flow when the diameter of the related art gold alloy wire for the bonding wire is 25 ⁇ m or 30 ⁇ m, the resin flow is hardly problem.
• the bonding is performed by using the wire having the thin diameter.
• the wire diameter is less than 20 ⁇ m, the loop is easily influenced during the molding of the resin. Accordingly, it is necessary to have the property (hereinafter, referred to as resin flowability resistance) of which the resin flow is difficult to produce, even though the wire has a thin diameter.
• the resistance of the gold alloy wire is desirable so as to be low in terms of heat or high frequency driving.
• the diameter of the gold alloy wire becomes smaller and a loop becomes longer.
• the resistance of the gold alloy wire tends to be long. Therefore, there has been a demand for a gold alloy wire for a bonding wire that has a low specific resistance and satisfies the above-mentioned characteristics.
• the gold alloy wire for the bonding wire described in patent reference 1 has problems in that a work hardening ability of a free-air ball is low and initial bonding ability is low. For this reason, it has not been possible to obtain a gold alloy wire for a bonding wire that can cope with the recent above-mentioned demand.
• An object of the invention is to provide a more excellent gold alloy wire for a bonding wire having high initial bonding ability, high bonding reliability, high roundness of a compression ball, high straightness, high resin flowability resistance, and low specific resistance.
• the inventors have done research so as to develop a gold alloy wire for a bonding wire having high initial bonding ability, high bonding reliability, high roundness of a compression ball, high straightness, high resin flowability resistance, and low specific resistance.
• the results obtained by the research are as follows:
• a gold alloy wire has a component composition having one or more of Pt and Pd of 500 to less than 1000 ppm in total, Ir of 1 to 100 ppm, and Ca of more than 30 to 100 ppm and Eu of more than 30 to 100 ppm, which are more than those of the gold alloy wire for the bonding wire in the related art in a high-purity gold having purity of 99.999% by mass.
• the above gold alloy wire has high initial bonding ability, high bonding reliability, high roundness of a compression ball, high straightness, high resin flowability resistance, and low specific resistance.
• the gold alloy wire having the composition described in (A) further has Be of 0.1 to 20 ppm. Since Be distorts a crystal lattice of Au to increase the mechanical strength of the gold alloy wire for the bonding wire and the work hardening ability of a free-air ball and lowers a re-crystallizing temperature, it is possible to raise the height of a loop. As a result, since it is possible to obtain the proper height of a loop, Be can be added, if necessary.
• the gold alloy wire having the composition described in (B) further includes one or more of La, Ba, Sr, and Bi of 30 to 100 ppm in total. Since the mechanical strength of the gold alloy wire for the bonding wire and the work hardening ability of a free-air ball are increased and a re-crystallizing temperature is raised in the gold alloy wire, it is possible to reduce the height of loop of the gold alloy wire.
• a gold alloy wire for a bonding wire having high initial bonding ability, high bonding reliability, high roundness of a compression ball, high straightness, high resin flowability resistance, and low specific resistance has a component composition having one or more of Pt and Pd of 500 to less than 1000 ppm in total, Ir of 1 to 100 ppm, Ca of more than 30 to 100 ppm, Eu of more than 30 to 100 ppm, and a balance being Au and inevitable impurities.
• a gold alloy wire for a bonding wire having high initial bonding ability, high bonding reliability, high roundness of a compression ball, high straightness, high resin flowability resistance, and low specific resistance has a component composition including one or more of Pt and Pd of 500 to less than 1000 ppm in total, Ir of 1 to 100 ppm, Ca of more than 30 to 100 ppm, Eu of more than 30 to 100 ppm, Be of 0.1 to 20 ppm, and a balance being Au and inevitable impurities.
• a gold alloy wire for a bonding wire having high initial bonding ability, high bonding reliability, high roundness of a compression ball, high straightness, high resin flowability resistance, and low specific resistance has a component composition having one or more of Pt and Pd of 500 to less than 1000 ppm in total, Ir of 1 to 100 ppm, Ca of more than 30 to 100 ppm, Eu of more than 30 to 100 ppm, Be of 0.1 to 20 ppm, one or more of La, Ba, Sr, and Bi of 30 to 100 ppm in total, and a balance being Au and inevitable impurities.
• the gold alloy wire having high initial bonding ability, high bonding reliability, high roundness of a compression ball, high straightness, high resin flowability resistance, and low specific resistance described in any one of (1) to (3) may further includes Ag of 1 to 10 ppm.
• a method of manufacturing a gold alloy wire for a bonding wire for annealing gold alloy wire materials obtained by conducting a drawing process the gold alloy wire materials having the component compositions described in (1) to (4) so as to have a predetermined diameter, when 0.2% proof strength (Pa) of the gold alloy wire for the bonding wire is ⁇ 0.2 , Young's modulus (Pa) is E, and fracture elongation percentage is E L , it may manufacture the gold alloy wire for the bonding wire satisfying the following equations under an annealing temperature of 550° C. or less which is lower than the related art annealing temperature:
• a reduction ratio by one die during the drawing process is 5% or less which is lower than the related art reduction ratio.
• the gold alloy wire for the bonding wire for satisfying the above-described conditions has higher straightness and higher resin flowability resistance.
• Both Pt and Pd which form a complete solid solubility with Au, cause the deterioration of the bonding strength of the compression ball and Al pad to inhibit and improve the bonding reliability.
• the layered-shape phase including Pt or Pd is formed in the vicinity of a bonding interface to act as a layer (so called, barrier layer with respect to Au diffusion) for decreasing a diffusion velocity of Au, thereby inhibiting the generating velocity of voids generating in the bonding part in accordance with the diffusion of Au. Accordingly, it is considered that Pt and Pd inhibit the deterioration of the bonding strength of the compression ball and Al pad and improve the bonding reliability.
• the effect for inhibiting (improving the bonding reliability) the deterioration of the bonding strength grows higher.
• the total amount of one or more of Pt and Pd is less than 500 ppm, the effect for inhibiting the deterioration of the bonding strength is not obtained.
• the total amount of one or more of Pt and Pd is larger than 1000 ppm, the resistance of the gold alloy is raised. For this reason, it is not preferable that the total amount of one or more of Pt and Pd be less than 500 ppm or 1000 ppm or larger. Accordingly, the total amount of one or more of Pt and Pd is set within the range of 500 to less than 1000 ppm.
• Ir inhibits the growth of grains (coarsening of grains). For this reason, when forming a free-air ball, it prevents the grain of a wire part (heat-affected part) directly on the ball from being coarsened due to the effect of heat on the ball, and the solidified free-air ball is formed from a great number of fine grains. In addition, the compression ball evenly extends in a radial pattern, and the roundness of the compression ball is improved. However, when the amount of Ir is less than 1 ppm, it may not obtain a predetermined effect.
• the amount of Ir is larger than 100 ppm in the gold alloy wire for the bonding wire containing one or more of Pt and Pd of 500 to less than 1000 ppm in total, the effects are saturated and are not apparently improved, thus causing IC chips to destruct or impair.
• the amount of Ir it is not preferable that the amount of Ir be less than 1 ppm and larger than 100 ppm. Accordingly, the amount of Ir is set within the range of 1 to 100 ppm.
• Ca which is an alkali earth metal and has the metal bond radius larger than that of Au distorts the crystal lattice of Au, thereby increasing the mechanical strength of the gold alloy wire for the bonding wire and work hardening ability of the free-air ball, raising the re-crystallizing temperature, and lowering the height of loop of the gold alloy wire.
• the amount of Ca is less than 30 ppm, since the work hardening ability is lowered, thereby lowering the initial bonding ability.
• the strength is low, it is difficult to satisfy the conditions of E ⁇ 75 GPa, ( ⁇ 0.2 /E) ⁇ 2.2 ⁇ 10 ⁇ 3 , and 2% ⁇ E L ⁇ 10%. Therefore, the straightness and resin flowability resistance are lower.
• the amount of Ca is larger than 100 ppm, a quantity of oxides is generated on the surface of a free-air ball during the bonding of balls, and large shrinkage holes, which do not contribute to the bonding, are formed at the bottom-center of the free-air ball. Since the initial bonding ability of the ball bonding is lowered, it is not preferable that the amount of Ca be 30 ppm or less or larger than 100 ppm. Accordingly, the amount of Ca is set within the range of more than 30 to 100 ppm.
• Eu which is a rare earth metal and has the metal bond radius larger than that of Au distorts the crystal lattice of Au, thereby increasing the mechanical strength of the gold alloy wire for the bonding wire and the work hardening ability of free-air ball, raising the re-crystallizing temperature, and lowering the height of loop of the gold alloy wire.
• Eu has a metal bonding radius significantly larger than other metals, the above-mentioned effect is significant in the gold alloy wire for the bonding wire having a small diameter (in particular, diameter less than 20 ⁇ m).
• the amount of Eu is 30 ppm or less, the work hardening ability is lowered, thereby lowering the initial bonding ability.
• the strength is lower, it is difficult to satisfy the conditions of E ⁇ 75 GPa, ( ⁇ 0.2 /E) ⁇ 2.2 ⁇ 10 ⁇ 3 , and 2% ⁇ E L ⁇ 10%. Therefore, the straightness and resin flowability resistance are lower.
• the amount of Eu is larger than 100 ppm, a quantity of oxides is generated on the surface of free-air ball during the bonding of balls, and large shrinkage holes, which do not contribute to the bonding, are formed at the bottom-center of the free-air ball. Since the initial bonding ability of the ball bonding is lowered, it is not preferable that the amount of Eu be 30 ppm or less and larger than 100 ppm. Accordingly, the amount of Eu is set within the range of more than 30 to 100 ppm.
• Be has the metal bond radius smaller than that of Au and distorts the crystal lattice of Au, thereby increasing the mechanical strength of the gold alloy wire for the bonding wire and the work hardening ability of free-air ball.
• the amount of Be is less than 0.1 ppm, it may not obtain a predetermined effect.
• the amount of Be is larger than 20 ppm, a quantity of oxides is generated on the surface of free-air ball during the bonding of balls, large shrinkage holes, which do not contribute to the bonding, are formed at the bottom-center of the free-air ball. Accordingly, the initial bonding ability of the ball bonding is lowered and the size of grains of the directly upper part of ball and the ball part increases, thus deteriorating the roundness of the compression ball part. For this reason, it is not preferable that the amount of Be be less than 0.1 ppm and larger than 20 ppm. Accordingly, the amount of Be is set within the range of 0.1 to 20 ppm.
• La which is a rare earth metal, Ba and Sr which are alkali earth metals, and Bi which is in a 5B group of the periodic system are possible to add, if necessary, in order to increase the mechanical strength of the gold alloy wire for the bonding wire and the work hardening ability of free-air ball, raise the re-crystallizing temperature, and lower the height of loop of the gold alloy wire.
• the amount of at least one of La, Ba, Sr, and Bi is less than 30 ppm, it may not obtain a predetermined effect.
• the amount of at least one of La, Ba, Sr, and Bi is larger than 100 ppm, a quantity of oxides is generated on the surface of free-air ball during the bonding of balls, and large shrinkage holes, which do not contribute to the bonding, are formed at the bottom-center of the free-air ball. Accordingly, the initial bonding ability of the ball bonding is lowered. For this reason, it is not preferable that the amount of at least one of La, Ba, Sr, and Bi be less than 30 ppm and larger than 100 ppm. Accordingly, the amount of at least one of La, Ba, Sr, and Bi is set within the range of 30 to 100 ppm.
• All of the gold alloy wires for the bonding wire containing the above-described component composition have high initial bonding ability, high bonding reliability, high roundness of a compression ball, high straightness, high resin flowability resistance, and low specific resistance.
• the gold alloy wire for the bonding wire so as to satisfy the conditions of E ⁇ 75 GPa, ( ⁇ 0.2 /E) ⁇ 2.2 ⁇ 10 ⁇ 3 , and 2% ⁇ E L ⁇ 10% by defining 0.2% proof strength (Pa) of the gold alloy wire as ⁇ 0.2 , Young's modulus (Pa) as E, and fracture elongation percentage as E L , all of the gold alloy wires for the bonding wire containing the above-described component composition have higher straightness and higher resin flowability resistance.
• the fracture elongation percentage E L (%), the 0.2% proof strength ⁇ 0.2 (Pa), and the Young's modulus (Pa) of the gold alloy wire for the bonding wire are measured by tensioning the gold alloy wire up to be fractured by a tension tester in the conditions of the distance between gauge points: 100 mm and a tension velocity: 10 mm/minute at a room temperature.
• the fracture elongation percentage E L (%), the 0.2% proof strength ⁇ 0.2 (Pa), and the Young's modulus (Pa) are defined as follows.
• the fracture elongation percentage E L (%) strain when the gold alloy wire is fractured ⁇ 100 [elongation (mm) when the gold alloy wire is fractured/100 (mm)] 1 ⁇ 100.
• the gold alloy wire for the bonding wire according to the invention has excellent initial bonding ability, excellent bonding reliability, excellent roundness of a compression ball, excellent straightness, excellent resin flowability resistance, and low specific resistance. Accordingly, when the gold alloy wire is used in bonding processes, it is possible to improve the yield ratio of semiconductor devices. As a result, the gold alloy wire for the bonding wire according to the invention has especially excellent effects in an industry.
• a gold alloy wire having a wire diameter: 19 ⁇ m was manufactured by a drawing process a gold alloy wire material having a wire diameter: 50 ⁇ m and having component compositions indicated in Tables 1 to 3 at a reduction ratio by one die of 4.8%.
• gold alloy wires for a bonding wire according to the invention (hereinafter, referred to as wires according to the invention) 1 to 34, comparative gold alloy wires for a bonding wire (hereinafter, referred to as comparative wires) 1 to 20, and the related art gold alloy wire for a bonding wire (hereinafter, referred to as the related art wire) 1 were manufactured by annealing the gold alloy wire at temperature indicated in Tables 4 to 6, and taken-out by an immediate spool of radius: 50 mm.
• the radii of all of sheaves (pulleys) using for changing paths of the wires are 9 mm.
• a fracture elongation percentage E L , Young's modulus (Pa) E, and 0.2% proof strength (Pa) ⁇ 0.2 were measured by winding by a spool having a radius of 25 mm by 2000 m the wire taken-out by the immediate spool and removing the tip of the wire by 15 m, and ⁇ 0.2 /E was calculated.
• the results were indicated in Tables 4 to 6.
• the specific resistances of the wires are measured, and the results of the measurement were indicated in Tables 4 to 6.
• the number of samples is five in each of the measurement, thereby obtaining an average value.
• Resistances ( ⁇ ) of the samples were measured by a digital multimeter in the conditions of the distance between gauge points: 500 mm at a room temperature, and the specific resistances of the wires were obtained with the following equation.
• the wires 1 to 34 according to the invention, the comparative wires 1 to 20, and the related art wire 1 having the component compositions indicated in Tables 1 to 3 and the mechanical properties indicated in Tables 4 to 6 were set in wire bond (maxam plus) manufactured by Kulicke & Soffa, and the bonding was performed on the substrate in which IC chips of the semiconductor were mounted under the conditions of heating temperature: 150° C., the length of loop: 5 mm, the height of loop: 220 ⁇ m, the diameter of a compression ball: 34 ⁇ m, and the height of the compression ball: 8 ⁇ m.
• the straightness, initial bonding ability, and roundness of the compression ball with respect to the wires 1 to 34 according to the invention, the comparative wires 1 to 20, and the related art wire 1 were estimated by following measurements.
• the wires 1 to 34 according to the invention, the comparative wires 1 to 20, and the related art wire 1 having the component compositions indicated in Tables 1 to 3 and the mechanical properties indicated in Tables 4 to 6 were set in the wire bond (maxam plus) manufactured by Kulicke & Soffa, and the looping were mounted was performed under the conditions of the diameter of the compression ball: 34 m, the height of the compression ball: 8 ⁇ m, and the length of loop: 1 mm without doing reverse.
• the highest part of the loop and the height of the area of Al pad were measured by a light microscope, and the difference of the highest part of the loop and the height of the area of Al pad was obtained as the height of loop. Accordingly, the height of loop was estimated by indicating the results in Tables 4 to 6.
• the inside of the semiconductor chip was X-ray projected by using a soft X-ray non-destruction inspection system and the flowing rates where the maximum portion of the wire flow were measured at 20 times.
• the obtained value (%) was defined as a resin flow, and the resin flow was measured. Accordingly, the resin flowability resistance was estimated by indicating the results in Tables 4 to 6.
• the wires 1 to 34 according to the invention have low specific resistance, excellent straightness, initial bonding ability, roundness of the compression ball, bonding reliability, and resin flowability resistance, and more particularly, with respect to the excellent straightness, initial bonding ability, roundness of the compression ball, bonding reliability, and resin flowability resistance, the comparative wires 1 to 20 and the related art wire 1 have a defect of at least one of the above-described properties.

Landscapes

• Engineering & Computer Science (AREA)
• Chemical & Material Sciences (AREA)
• Mechanical Engineering (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Materials Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• Wire Bonding (AREA)

Applications Claiming Priority (3)

Publications (1)

Family

ID=37532188

Family Applications (1)

Country Status (7)

Cited By (1)

Families Citing this family (4)

Family Cites Families (9)

• 2005
  • 2005-06-14 JP JP2005173726A patent/JP4726206B2/ja not_active Expired - Fee Related
• 2006
  • 2006-06-08 CN CNB2006800292041A patent/CN100550332C/zh not_active Expired - Fee Related
  • 2006-06-08 KR KR1020087000927A patent/KR101087526B1/ko not_active IP Right Cessation
  • 2006-06-08 WO PCT/JP2006/311525 patent/WO2006134825A1/ja active Application Filing
  • 2006-06-08 EP EP06766498A patent/EP1909317A4/en not_active Withdrawn
  • 2006-06-08 US US11/917,228 patent/US20090232695A1/en not_active Abandoned
  • 2006-06-09 TW TW095120690A patent/TW200703532A/zh unknown

Also Published As

Similar Documents

Legal Events