JPH1145901A - ボンディングワイヤ - Google Patents
ボンディングワイヤInfo
- Publication number
- JPH1145901A JPH1145901A JP9199514A JP19951497A JPH1145901A JP H1145901 A JPH1145901 A JP H1145901A JP 9199514 A JP9199514 A JP 9199514A JP 19951497 A JP19951497 A JP 19951497A JP H1145901 A JPH1145901 A JP H1145901A
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- bonding
- bonding wire
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Abstract
ボンディングワイヤを提供する。 【解決手段】 ボンディングワイヤの組成をAgを19
〜40%、Y,La,Ce、Eu、Srの内の1種以上
を合計量で0.0001〜0.01%、残部をAu及び
不可避不純物とする。あるいは、前記組成に更にPt、
Ru、Os、Rh、Irの内の1種以上を合計量で0.
1〜5%含有させたもの、Be、Ca、In、Ge、S
nの内の1種以上を合計量で0.0001〜0.01%
含有させたもの、又はCu、Pt、Ru、Os、Rh、
Irの内の1種以上を合計量で0.1〜5%及びBe、
Ca、In、Ge、Snの内の1種以上を合計量で0.
0001〜0.01%、を含有させたものを用いる。
Description
と外部リードとを接続するために用いるボンディングワ
イヤに関する。
プ)の電極と外部リードとを接続するため直径0.02
〜0.1mmのボンディングワイヤが用いられている。
これらのボンディングワイヤには良好な導電性、チップ
や外部リードとの接合性、使用雰囲気中での耐環境性が
要求される。そのため、Al,Au,Cu等の純金属も
しくはその合金を用いてボンディングワイヤが製造され
てきている。近年では低コスト化という観点から樹脂を
用いた半導体パッケージが多用されてきており、そのた
め耐環境性に優れるAu系ワイヤが最も多く用いられて
いる。
くは99.99重量%(以下単に%と記す)以上の純度
を有する軟質のものであった。最近の半導体デバイスの
発展はパッケージの多ピン化をもたらし、その結果とし
てより細いワイヤを狭いピッチで、かつ長い距離でワイ
ヤボンディングを行う必要性が増してきた。
はこのためにはワイヤ強度が十分でなく、樹脂封入を始
めとする半導体デバイス組み立て工程中においてワイヤ
の変形不良が頻発化し、半導体デバイスの組み立て収率
が大幅に低下するという問題があった。
る点に鑑み、多ピン半導体デバイス用として好適な高強
度ボンディングワイヤを提供することにある。
の本発明のボンディングワイヤの第一の態様は、Agが
19〜40%、Y,La,Ce、Eu、Srの内の1種
以上が合計量で0.0001〜0.01%、残部がAu
及び不可避不純物からなるものである。そして、第二の
態様はAgが19〜40%、Y,La,Ce、Eu、S
rの内の1種以上が合計量で0.0001〜0.01
%、さらにCu、Pt、Ru、Os、Rh、Irの内の
1種以上が合計量で0.1〜5%、残部がAu及び不可
避不純物からなるものである。また、第三の態様はAg
が19〜40%、Y,La,Ce、Eu、Srの内の1
種以上が合計量で0.0001〜0.01%、さらにB
e、Ca、In、Ge、Snの内の1種以上が合計量で
0.0001〜0.01%、残部がAu及び不可避不純
物からなるものである。さらに第四の態様はAgが19
〜40%、Y,La,Ce、Eu、Srの内の1種以上
が合計量で0.0001〜0.01%、Cu、Pt、R
u、Os、Rh、Irの内の1種以上が合計量で0.1
〜5%、さらにBe、Ca、In、Ge、Snの内の1
種以上が合計量で0.0001〜0.01%、残部がA
u及び不可避不純物からなるものである。
する。
り、Y,La,Ce、Eu、Srはワイヤに必須な耐熱
性を付与する元素である。AgとこれらY等の元素の1
種以上を共存させることによって、必要なワイヤ強度を
得ることが可能となる。また、Y等の元素にはワイヤの
ループ高さを低くして、樹脂封入時のワイヤの変形を起
こりにくくする効果も有する。
9%未満では強度向上の効果が不十分であり、逆に40
%を超すとワイヤ硬度が高くなりすぎて、ワイヤボンデ
ィング時に半導体チップへダメージを与えるようになる
からである。
上の含有量を、合計量で0.0001〜0.01%とし
たのは、0.0001%未満では添加による特性向上効
果が不十分であり、逆に0.01%を超えると接合性の
低下が起こるからである。
u、Os、Rh、Irはワイヤ強度をさらに向上させる
元素である。Cu、Pt、Ru、Os、Rh、Irの内
の1種以上の含有量を、合計量で0.1〜5%としたの
は、0.1%未満では添加効果が不十分であり、逆に5
%を超えるとワイヤの加工性が低下して細線化するのに
多大な工数が必要となるからである。
n、Ge、Snはワイヤのループ形状を安定化する効果
を有する元素である。Be、Ca、In、Ge、Snの
内の1種以上の含有量を合計量で0.0001〜0.0
1%としたのは、0.0001%未満では添加による特
性向上効果が不十分であり、逆に0.01%を超えると
接合性の低下が起こるからである。
る。
金、99.99%のAg、Cu、Pt、Ru、Os、R
h、Ir、及び所定の添加元素を1%含む金母合金を用
いて、表1に示す組成の金合金を溶解鋳造した。
ドダイスを用いた伸線加工を行って直径0.025mm
の合金線とした。この合金線を熱処理して特性を調整
し、試料とした。
ワイヤ強度は引張り試験により求めた。
ワイヤと半導体素子の電極及び外部リードとの接合性
は、ステージ温度250℃で超音波熱圧着方式によりボ
ンディングしたワイヤについて、フックを引っかけて引
張り試験を実施することにより評価した。
確認として、上記と同様な方法によりボンディングした
ワイヤーについて、200℃で100時間保持した後に
引張り試験を実施した。引張り試験については、破断が
ワイヤの部分で起こった場合を良、破断が接合部で起こ
ったり半導体チップにクラックが発生した場合を不良と
判定した。
によるワイヤ変形については、上記と同様な方法で5m
mの間隔にワイヤボンディングした試料について、モー
ルド機(トランスファーモールド型)によりエポキシ樹
脂(住友ベークライト製、EME-6300)を金型温度180
℃、射出圧100Kg/cm2の条件でモールドした時
のワイヤの流れ量をX線透過装置により撮影したX線写
真から求め、その値で評価した。
り、保管後とは200℃に100時間保持後のことであ
る。
較材を用いた以外は実施例と同様にして評価した。表3
に金合金の組成、表4に特性を示した。
り、保管後とは200℃に100時間保持後のことであ
る。
明によるボンディングワイヤは、市販品に比較して強度
が高く、ワイヤ流れ量が小さい。また、比較材と比べる
と接合性にも問題の無いことがわかる。
り、半導体デバイス組み立て時におけるワイヤの変形不
良が起こりにくい、多ピン半導体デバイス用として好適
なボンディングワイヤを提供することができる。
Claims (4)
- 【請求項1】 Agが19〜40%、Y,La,C
e、Eu、Srの内の1種以上が合計量で0.0001
〜0.01%、残部がAu及び不可避不純物からなるこ
とを特徴とするボンディングワイヤ。 - 【請求項2】 Agが19〜40%、Y,La,C
e、Eu、Srの内の1種以上が合計量で0.0001
〜0.01%、さらにCu、Pt、Ru、Os、Rh、
Irの内の1種以上が合計量で0.1〜5%、残部がA
u及び不可避不純物からなることを特徴とするボンディ
ングワイヤ。 - 【請求項3】 Agが19〜40%、Y,La,C
e、Eu、Srの内の1種以上が合計量で0.0001
〜0.01%、さらにBe、Ca、In、Ge、Snの
内の1種以上が合計量で0.0001〜0.01%、残
部がAu及び不可避不純物からなることを特徴とするボ
ンディングワイヤ。 - 【請求項4】 Agが19〜40%、Y,La,C
e、Eu、Srの内の1種以上が合計量で0.0001
〜0.01%、Cu、Pt、Ru、Os、Rh、Irの
内の1種以上が合計量で0.1〜5%、さらにBe、C
a、In、Ge、Snの内の1種以上が合計量で0.0
001〜0.01%、残部がAu及び不可避不純物から
なることを特徴とするボンディングワイヤ。
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JP19951497A JP3633222B2 (ja) | 1997-07-25 | 1997-07-25 | ボンディングワイヤ |
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JP19951497A JP3633222B2 (ja) | 1997-07-25 | 1997-07-25 | ボンディングワイヤ |
Publications (2)
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JPH1145901A true JPH1145901A (ja) | 1999-02-16 |
JP3633222B2 JP3633222B2 (ja) | 2005-03-30 |
Family
ID=16409096
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JP19951497A Expired - Fee Related JP3633222B2 (ja) | 1997-07-25 | 1997-07-25 | ボンディングワイヤ |
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WO2006035905A1 (ja) * | 2004-09-30 | 2006-04-06 | Tanaka Denshi Kogyo K.K. | ワイヤバンプ材料 |
WO2006134825A1 (ja) * | 2005-06-14 | 2006-12-21 | Tanaka Denshi Kogyo K.K. | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性、高い耐樹脂流れ性および低い比抵抗を有するボンディングワイヤ用金合金線 |
WO2006134824A1 (ja) * | 2005-06-14 | 2006-12-21 | Tanaka Denshi Kogyo K.K. | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
WO2006134823A1 (ja) * | 2005-06-14 | 2006-12-21 | Tanaka Denshi Kogyo K.K. | 高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
EP4245871A1 (fr) * | 2022-03-18 | 2023-09-20 | Nivarox-FAR S.A. | Alliage d'or |
-
1997
- 1997-07-25 JP JP19951497A patent/JP3633222B2/ja not_active Expired - Fee Related
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