JP3615901B2 - 半導体素子ボンディング用金合金線 - Google Patents

半導体素子ボンディング用金合金線 Download PDF

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JP3615901B2
JP3615901B2 JP06843997A JP6843997A JP3615901B2 JP 3615901 B2 JP3615901 B2 JP 3615901B2 JP 06843997 A JP06843997 A JP 06843997A JP 6843997 A JP6843997 A JP 6843997A JP 3615901 B2 JP3615901 B2 JP 3615901B2
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alloy wire
gold
weight
gold alloy
bonding strength
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JPH10270485A (ja
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威吏 徳山
英行 秋元
守 飯野
祐介 藤本
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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Description

【０００１】
【発明の属する技術分野】
本発明は、半導体素子の電極と外部リード部を接続するために使用するボンディング用金合金線に関し、さらに詳しくは半導体装置を薄肉化する際に用いて好適な半導体素子ボンディング用金合金線に関する。
【０００２】
【従来の技術】
従来からトランジスタ、ＩＣ，ＬＳＩ等の半導体素子の電極と外部リードを接続する技術としては、純度９９．９９重量％以上の高純度金に他の金属元素を微量含有させた金合金線を用いた超音波併用熱圧着ボンディング法が主として用いられている。
【０００３】
このようにして接続された状況を図１に示す。図１において１は半導体素子、２は電極、３は金合金線、４はリードフレーム、Ｈは半導体素子上面を基準としたループ高さ（以下ループ高さという）である。半導体素子１の電極２の上にボールボンディングした後ループ状に配線し、リードフレーム４で超音波接合が行われている。
【０００４】
一方最近の薄肉化を要求される配線においては前記ループ高さを低く抑える事、所謂低ループ配線が要求されている。これに対応する為、特開平１−２９３６２６号公報には第１ボンドと第２ボンドを逆にして配線すること、即ち最初にボールボンディングする位置をリードフレーム側にして行うことにより結果として低ループとするボンディング方法が提案されている。また特開平６−３３８５３２号公報には図１に示す配線において低ループとする為にボンディング線として所定組成の金合金線を用いる事が提案されている。
【０００５】
【発明が解決しようとする課題】
しかしながら特開平１−２９３６２６号公報に開示されている第１ボンドと第２ボンドを逆にして配線する方法は、後からボンディングする超音波接合を確実に行う為に配慮が必要となり生産性が悪くなってくる。
また特開平６−３３８５３２号公報に開示されている様な組成の金合金線を用いた場合、ループ高さを低くする事が未だ不十分であるとともに高温状態に晒した後のボールボンディング部の接合強度が小さいという欠点を有している。
【０００６】
本発明は上述したような従来事情に鑑みてなされたものであり、その目的とするところは、半導体装置の薄肉化の要求に対応してループ高さを低くする事が出来ると共に、高温状態に晒した後のボールボンディング部の接合強度（以下高温接合強度という）に優れた半導体素子ボンディング用金合金線を提供することである。
【０００７】
【課題を解決するための手段】
本発明者等は鋭意研究を重ねた結果、所定量のＰｄ，Ｐｔ，Ａｇのうち少なくとも１種と所定量のＢｉ及び残部が金と不可避不純物からなる組成の金合金線とすることにより、前述の目的を達成し得ることを知見し、本発明を完成するに至った。
【０００８】
こうして、本発明によれば下記が提供される。
（１）パラジウム（Ｐｄ）、白金（Ｐｔ）、銀（Ａｇ）のうち少なくとも１種を０．２〜２０．０重量％、ビスマス（Ｂｉ）を０．０００１〜０．０１重量％、及び残部が金と不可避不純物からなることを特徴とする半導体素子ボンディング用金合金線。
【０００９】
（２）パラジウム（Ｐｄ）、白金（Ｐｔ）、銀（Ａｇ）のうち少なくとも１種が０．５〜５．０重量％であることを特徴とする（１）記載の半導体素子ボンディング用金合金線。
（３）更にＹ，Ｌａ，Ｃａ，Ｅｕのうち少なくとも１種を０．１重量％以下含有することを特徴とする（１），（２）記載の半導体素子ボンディング用金合金線。
【００１０】
（４）更にベリリウム（Ｂｅ）を０．００２重量％以下含有することを特徴とする（３）記載の半導体素子ボンディング用金合金線。
【００１１】
【発明の実施の形態】
原料金としては少なくとも９９．９９重量％以上に精製した高純度金を用いることが好ましい。更に好ましくは９９．９９５重量％以上であり、最も好ましくは９９．９９９重量％以上である。この為合金中の不純物は０．０１重量％以下が好ましい。更に好ましくは０．００５重量％以下であり、最も好ましくは０．００１重量％以下である。
【００１２】
前記高純度金に所定量のＢｉとの共存において、Ｐｄ，Ｐｔ，Ａｇのうち少なくとも１種を所定量含有した組成とする事によりループ高さを低くする事が出来ると共に、高温接合強度を向上させる事が出来る。Ｐｄ，Ｐｔ，Ａｇのうち少なくとも１種の含有量が０．２重量％未満になると、０．２重量％以上のものと対比してループ高さは高くなると共に高温接合強度は低くなる。Ｐｄ，Ｐｔ，Ａｇのうち少なくとも１種の含有量が２０．０重量％を超えると、ループ高さは高くなると共に高温接合強度は低くなる。この為Ｐｄ，Ｐｔ，Ａｇのうち少なくとも１種の含有量は０．２〜２０．０重量％と定めた。
【００１３】
さらにＰｄ，Ｐｔ，Ａｇのうち少なくとも１種の含有量が０．５〜５．０重量％の時、ループ高さは更に低くなり、高温接合強度は更に向上してくる。この為好ましくはＰｄ，Ｐｔ，Ａｇのうち少なくとも１種の含有量は０．５〜５．０重量％である。
高純度金に所定量のＰｄ，Ｐｔ，Ａｇのうち少なくとも１種との共存において、所定量のＢｉをさらに含有した組成とする事により、ループ高さを低くする事が出来ると共に、高温接合強度を向上させる事が出来る。
【００１４】
Ｂｉの含有量が０．０００１重量％未満になると、０．０００１重量％以上のものと対比してループ高さは高くなると共に高温接合強度は低くなる。Ｂｉの含有量が０．０１重量％を超えると、ループ高さは高くなると共に高温接合強度は低くなる。この為Ｂｉの含有量は０．０００１〜０．０１重量％と定めた。
所定量のＰｄ，Ｐｔ，Ａｇのうち少なくとも１種とＢｉに加えて、Ｙ，Ｌａ，Ｃａ，Ｅｕのうち少なくとも１種を０．１重量％以下をさらに含有した組成にすることにより、ループ高さを低くする事が出来ると共に、高温接合強度を向上させる効果を維持する事が出来る。
【００１５】
所定量のＰｄ，Ｐｔ，Ａｇのうち少なくとも１種と、Ｂｉ及び所定量のＹ，Ｌａ，Ｃａ，Ｅｕのうち少なくとも１種に加えて、Ｂｅを０．００２重量％以下さらに含有した組成にすることにより、ループ高さを低くする事が出来ると共に、高温接合強度を向上させる効果を維持する事が出来る。
本発明になる金合金線の好ましい製造方法を説明する。
【００１６】
高純度金に所定量の元素を添加し、真空溶解炉で溶解した後インゴットに鋳造する。そのインゴットに溝ロール、伸線機を用いた冷間加工と中間アニールを施し、最終冷間加工により直径１０〜１００μｍの細線とした後最終アニールを施す。
本発明になる半導体素子ボンディング用金合金線は半導体装置の実装に際して、ＩＣチップ等の半導体素子をリードフレームに配線して、樹脂やセラミックスで封止処理した半導体装置に用いられる。
【００１７】
【実施例】
表１〜３に示す実施例及び比較例について説明する。
（実施例１）
純度９９．９９９重量％の高純度金に所定量のＰｄ及びＢｉを添加し真空溶解炉で溶解した後、鋳造して表１に示す組成の金合金、即ち０．２重量％ Ｐｄ、０．００３重量％ Ｂｉ、残部が金及び不可避不純物からなる組成のインゴットを得、これに溝ロール、伸線機を用いた冷間加工と中間アニールを施し、最終冷間加工により直径３０μｍとし、伸び率４％となるように最終アニールを行った。
【００１８】
この金合金線を全自動ワイヤボンダー（新川株式会社製 ＵＴＣ−５０型）を用いて、加熱温度２００℃で、ＩＣチップのＡｌ電極とリードフレームを超音波併用熱圧着ボンディング法でピン数１００個のボンディングした試料を作成した。
この試料を測定顕微鏡（オリンパス株式会社製 ＳＴＭ−ＭＪＳ型）を用いて、そのループ高さを測定した。ループ高さは図１に於いてＩＣチップ１の上面を基準面として、ループの最も高い高さＨを測定し、ループ高さとした。１００個の測定を行い、その平均値をループ高さ平均値として表１に示した。
【００１９】
更に同様にしてピン数１００個のボンディングした試料を作成し、２００℃で５００時間放置した後シアーテスターを用いて剪断荷重を測定し、５０箇所の平均値を高温接合強度として表１に示した。
（実施例２〜４１）および（比較例１〜５）
金合金線の組成を表１〜３に示すようにしたこと以外は実施例１と同様にして、直径３０μｍの線に仕上げ、ループ高さ平均値、高温接合強度を実施例１と同様にして測定し、その測定結果を表１〜３に示した。
【００２０】
【表１】
Figure 0003615901
【００２１】
【表２】
Figure 0003615901
【００２２】
【表３】
Figure 0003615901
【００２３】
（試験結果）
（１）高純度金に、所定量のＢｉに加えて、Ｐｄ，Ｐｔ，Ａｇのうち少なくとも１種を０．２〜２０．０重量％含有した組成である実施例１〜１９は、ループ高さが８４〜１４７μｍと低く、高温接合強度が３３〜６７ｇと大きいものであった。
【００２４】
この中でもＰｄ，Ｐｔ，Ａｇのうち少なくとも１種を０．５〜５．０重量％含有した組成では、ループ高さが８４〜１１３μｍと更に低く、高温接合強度が５２〜６７ｇと更に大きい為、好ましく用いられる。
（２）高純度金に、所定量のＰｄ，Ｐｔ，Ａｇのうち少なくとも１種を加えて、Ｂｉを０．０００１〜０．０１重量％含有した組成である実施例２０〜２５は、ループ高さが９８〜１１３μｍと低く、高温接合強度が５４〜６２ｇと大きいものであった。
【００２５】
（３）高純度金に、所定量のＰｄ，Ｐｔ，Ａｇのうち少なくとも１種と所定量のＢｉに加えて、Ｙ，Ｌａ，Ｃａ，Ｅｕのうち少なくとも１種を０．０００５〜０．１重量％含有した組成である実施例２６〜３９は、ループ高さ８４〜１４４μｍと低く、高温接合強度が３５〜６８ｇと大きいものであった。
この中でもＰｄ，Ｐｔ，Ａｇのうち少なくとも１種を０．５〜５．０重量％含有した組成では、ループ高さが８４〜１１０μｍと更に低く、高温接合強度が６２〜６８ｇと更に大きい為、好ましく用いられる。
【００２６】
（４）高純度金に、所定量のＰｄ，Ｐｔ，Ａｇのうち少なくとも１種と所定量のＢｉとＹ，Ｌａ，Ｃａ，Ｅｕのうち少なくとも１種に加えて、Ｂｅを０．０００１〜０．００２重量％含有した組成である実施例４０〜４１は、ループ高さが９０〜９５μｍと低く、高温接合強度が６７〜６８ｇと大きいものであった。
（５）高純度金に、所定量のＢｉ及びＹ，Ｌａ，Ｃａ，Ｅｕのうち少なくとも１種を含有するものの、本発明の必須成分であるＰｄ，Ｐｔ，Ａｇのうち少なくとも１種を含有しないか又は含有しても所定量に達しない比較例１〜２は、ループ高さが１８２〜１８８μｍと高く、高温接合強度が２４〜２７ｇと低いものであった。
【００２７】
（６）高純度金に、所定量のＰｄ，Ｐｔ，Ａｇのうち少なくとも１種及びＹ，Ｌａ，Ｃａ，Ｅｕのうち少なくとも１種を含有するものの、本発明の必須成分であるＢｉを含有しない組成である比較例３〜５は、ループ高さが１７４〜１９５μｍと高く、高温接合強度が２１〜２７ｇと低いものであった。
【００２８】
【発明の効果】
本発明により０．２〜２０．０重量％のＰｄ，Ｐｔ，Ａｇのうち少なくとも１種及びＢｉ ０．０００１〜０．０１重量％のＢｉを含有し残部が金及び不可避不純物からなる組成を有する半導体素子ボンディング用金合金線によれば、ループ高さを低くする事が出来ると共に高温接合強度を向上させる事が出来る。
【００２９】
Ｐｄ，Ｐｔ，Ａｇのうち少なくとも１種の含有量を０．５〜５．０重量％にすることによりループ高さを低くする効果及び高温接合強度を向上させる効果が一段と向上してくる。
前記含有成分に加えて所定量のＹ，Ｌａ，Ｃａ，Ｅｕのうち少なくとも１種又はそれに加えて所定量のＢｅを含有した組成においても、同様の効果を示すものである。
【図面の簡単な説明】
【図１】半導体素子のボンディングの様子を示す。
【符号の説明】
１…半導体素子
２…電極
３…金合金線
４…リードフレーム
Ｈ…ループ高さ

Claims (4)

  1. パラジウム（Ｐｄ）、白金（Ｐｔ）、銀（Ａｇ）のうち少なくとも１種を０．２〜２０．０重量％、ビスマス（Ｂｉ）を０．０００１〜０．０１重量％、及び残部が金と不可避不純物からなることを特徴とする半導体素子ボンディング用金合金線。
  2. パラジウム（Ｐｄ）、白金（Ｐｔ）、銀（Ａｇ）のうち少なくとも１種が０．５〜５．０重量％であることを特徴とする請求項１記載の半導体素子ボンディング用金合金線。
  3. 更にＹ，Ｌａ，Ｃａ，Ｅｕのうち少なくとも１種を０．１重量％以下含有することを特徴とする請求項１又は２記載の半導体素子ボンディング用金合金線。
  4. 更にベリリウム（Ｂｅ）を０．００２重量％以下含有することを特徴とする請求項３記載の半導体素子ボンディング用金合金線。
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