JPS6222448B2 - - Google Patents

Info

Publication number
JPS6222448B2
JPS6222448B2 JP54090126A JP9012679A JPS6222448B2 JP S6222448 B2 JPS6222448 B2 JP S6222448B2 JP 54090126 A JP54090126 A JP 54090126A JP 9012679 A JP9012679 A JP 9012679A JP S6222448 B2 JPS6222448 B2 JP S6222448B2
Authority
JP
Japan
Prior art keywords
high purity
contained
alloy
breaking strength
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54090126A
Other languages
English (en)
Other versions
JPS5613740A (en
Inventor
Norimasa Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Kikinzoku Kogyo KK
Original Assignee
Tanaka Kikinzoku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Kikinzoku Kogyo KK filed Critical Tanaka Kikinzoku Kogyo KK
Priority to JP9012679A priority Critical patent/JPS5613740A/ja
Publication of JPS5613740A publication Critical patent/JPS5613740A/ja
Publication of JPS6222448B2 publication Critical patent/JPS6222448B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01044—Ruthenium [Ru]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01045—Rhodium [Rh]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01076—Osmium [Os]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01077—Iridium [Ir]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】
本発明は、半導体素子のチツプ電極と外部リー
ドとの電気的接続に用いるボンデイング線に関す
る。 従来、半導体素子のチツプ電極と外部リードに
連なるリードフレーム又はケースの接続部との電
気的接続には、高純度のAu線（ここで高純度の
Auとは、99.99w／ｏ以上のAuをいう。）や高純
度のAuに微量のCa，Bc，Ge，Ag，Ni，Fe，Co
等の含有せしめて成るAu合金線が用いられてき
た。これは、通常半導体素子のチツプ電極にAu
のボンデイングパツドが形成されており、一方リ
ードフレーム又はケースの方にもAu又はAgが用
いられていた為に、前記接続線を温度300℃程度
で熱圧着したり、H2トーチでAu線をボールアツ
プした後熱圧着したり、超音波エネルギーで圧着
して接続していた。 このように従来用いられてきた半導体素子用の
ボンデイング線は、99.99％以上の高純度のAuを
原料にして線加工により製造されていたが、通常
不純物として30〜40PPMのAs，20〜30PPMの
Cu，10PPM程度のPd，その他数PPM程度のPt族
元素やFe族元素等が入つている為、破断強度が
十分でなく、ボンデイング速度が早くなると0.05
ｍ以下の細線である為に切断してしまうという
欠点があつた。 この為従来は、Ca，Be，Ge，Ni，Fe，Co，
Ag等を極く僅かAuに含有させて成るボンデイン
グ線を用いていた。 然し乍ら、前記Ca，Be，Ge，Ni，Fe，Co，
Ag等を含有させたAuより成るボンデイング線は
ボンデイング性に優れているが、機械的強さとり
わけ破断強度については十分なものが得られず高
速自動ボンダーに適用すると断線を引き起こすと
いう欠点があつた。 本発明はかかる欠点を解消すべくなされたもの
であり、高純度Au又はCa，Be，Ge，Ni，Fe，
Co，Agの１種以上を0.0003w／ｏ乃至0.01w／ｏ
を含有せしめた高純度Au合金に、Pd，Pt，Ir，
Rh，Os，Ruの少くとも１種を総量で0.0003乃至
0.1w／ｏを含有せしめたことを特徴とする新規
な半導体素子用ボンデイング線を提供せんとする
ものである。 本発明の半導体素子用ボンデイング線におい
て、前記高純度Au又は高純度Au合金に、Pd，
Pt，Ir，Rh，Os，Ruの少くとも１種を含有させ
る理由は、これら白金族元素がAu又はAu合金中
に容易に溶解し、均一に分散して、Auの格子に
ひずみを与え、機械的強度を増加するからであ
る。 また前記白金族元素の少くとも１種の含有量の
総量を0.0003乃至0.1w／ｏとしたのは、
0.0003w／ｏ未満では上記効果が奏せず、0.1w／
ｏを超えると高純度Auの特性を阻害し、ボンデ
イング性が低下するからである。 以下本発明による半導体素子用ボンデイング線
の効果を明瞭ならしめる為にその具体的な実施例
と従来例について説明する。 99.999％純度のAuに下表の左欄に示す元素を
含有させた実施例１〜６のボンデイング線と従来
例１〜３のボンデイング線の機械的強さ、とりわ
け破断強度と伸び率を比較試験し、更にH2炎使
用のボンデイング性について比較試験したとこ
ろ、下記の表の右欄に示すような結果を得た。
【表】
【表】 上記の表で明らかなように本発明の実施例のボ
ンデイング線は、従来例のボンデイング線に比
し、機械的強さ即ち破断強度優れ、特にPt族元素
の内でもPtとPdを含むものが他のPt族元素を含
むものに較べ一段と破断強度に優れていることが
判る。また実施例のボンデイング線は従来例のボ
ンデイング線と同等の優れた伸び率を有し且つ
H2炎使用のボンデイング性に優れていることが
判る。 以上詳記した通り本発明による半導体素子用ボ
ンデイング線は、特に破断強度に優れ、伸び率，
H2炎使用のボンデイング性も優れているので、
従来の半導体素子用ボンデイング線にとつて代わ
ることができる。

Claims (1)

    【特許請求の範囲】
  1. １ 高純度Au又はCa，Be，Ge，Ni，Fe，Co，
    Agの１種以上を0.0003w／ｏ乃至0.01w／ｏを含
    有せしめた高純度Au合金に、Pd，Pt，Rh，Ir，
    Os，Ruの少くとも１種を総量で0.0003乃至
    0.1w／ｏを含有せしめたことを特徴とする半導
    体素子用ボンデイング線。
JP9012679A 1979-07-16 1979-07-16 Bonding wire for semiconductor element Granted JPS5613740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9012679A JPS5613740A (en) 1979-07-16 1979-07-16 Bonding wire for semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9012679A JPS5613740A (en) 1979-07-16 1979-07-16 Bonding wire for semiconductor element

Publications (2)

Publication Number Publication Date
JPS5613740A JPS5613740A (en) 1981-02-10
JPS6222448B2 true JPS6222448B2 (ja) 1987-05-18

Family

ID=13989804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9012679A Granted JPS5613740A (en) 1979-07-16 1979-07-16 Bonding wire for semiconductor element

Country Status (1)

Country Link
JP (1) JPS5613740A (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2116208B (en) * 1981-12-04 1985-12-04 Mitsubishi Metal Corp Fine gold alloy wire for bonding of a semiconductor device
US5491034A (en) * 1988-05-02 1996-02-13 Nippon Steel Corporation Bonding wire for semiconductor element
GB2231336B (en) * 1989-04-28 1993-09-22 Tanaka Electronics Ind Gold wire for the bonding of a semiconductor device
KR100426939B1 (ko) * 1995-06-19 2004-07-19 피가로 기켄 가부시키가이샤 가스센서
AT407830B (de) * 1999-09-10 2001-06-25 Degussa Huels Cee Gmbh Hochgoldhaltige, gelbe dentallegierung
JP5010495B2 (ja) * 2007-02-06 2012-08-29 新日鉄マテリアルズ株式会社 半導体素子接続用金線

Also Published As

Publication number Publication date
JPS5613740A (en) 1981-02-10

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