JPS62278241A - ボンデイングワイヤ - Google Patents

ボンデイングワイヤ

Info

Publication number
JPS62278241A
JPS62278241A JP61120790A JP12079086A JPS62278241A JP S62278241 A JPS62278241 A JP S62278241A JP 61120790 A JP61120790 A JP 61120790A JP 12079086 A JP12079086 A JP 12079086A JP S62278241 A JPS62278241 A JP S62278241A
Authority
JP
Japan
Prior art keywords
wire
barium
gold
bonding
purity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61120790A
Other languages
English (en)
Other versions
JPH0555579B2 (ja
Inventor
Eiichi Asada
栄一 浅田
Kazuo Yokoyama
和夫 横山
Masahiro Yada
矢田　昌宏
Kenichi Hirano
賢一 平野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shoei Chemical Inc
Original Assignee
Shoei Chemical Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shoei Chemical Inc filed Critical Shoei Chemical Inc
Priority to JP61120790A priority Critical patent/JPS62278241A/ja
Priority to US07/074,421 priority patent/US4752442A/en
Priority to FR878710843A priority patent/FR2618945B1/fr
Publication of JPS62278241A publication Critical patent/JPS62278241A/ja
Publication of JPH0555579B2 publication Critical patent/JPH0555579B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01056—Barium [Ba]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01204—4N purity grades, i.e. 99.99%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01205—5N purity grades, i.e. 99.999%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12431—Foil or filament smaller than 6 mils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Wire Bonding (AREA)
  • Conductive Materials (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 ３、発明の詳細な説明 発明の属する技術分野 本発明は、半導体素子と外部リードとを接続するための
ボンディング用ワイヤに関するものである。
従来の技術 半導体素子の電極と外部リードを電気的に接続するため
の一方法として、金やアルミニウムなどの直径数４１ｍ
〜数十μｔ＋（１）極細線を用いて結線するワイヤボン
ディング方式が広く行われている。なかでも金は優れた
耐食性、延展性及びボンディング性能を有しているため
、従来より純度９９．９９％程度の純金線が最も一般的
に使用されてきた。
金ワイヤを用いるボンディング法は、通常熱圧着法が採
用される。これは、金線を電気的に切断するか、水素炎
で溶断して先端にボールを形成し、このボールを半導体
素子の電極に加熱加圧接合し、次いで外部リードにワイ
ヤの他端を加熱加圧して接合するもので、全工程が２０
０〜３００℃の高温下で行われる。
近年ボンディングの自動化、高速化が図られているが、
高速ボンディングを行う場合、従来の純金線はボンディ
ング工程中線切れを起こしたり、熱により軟化したりす
るため使用できず、より信頼性の高いワイヤが要求され
る。即ち、（１）ボンディング中の線切れ防止のため握
械的強度、特に高温下での引張強度がより強いこと、（
２）加熱時の軟化によるループのたるみがないこと、 （３）樹脂モールド時にも軟化変形しないこと、（４）
ボンディング強度のばらつきをなくすため、ボール形状
が一定で真球に近いこと、 などの点でボンディング性能の向上が必要である。
これまでに高純度金線に種々の元素を添加して、これら
の特性を改善する試みがなされてきた。例えば特公昭５
７−３４６５９号や特公昭５８−２６６６２号にはカル
シウムやベリリウムの微量添加により強度が改善される
ことが述べられており、その他、白金、パラジウム、銀
、チタン、マグネシウム等多くの添加元素が提案されて
いる。
明が解決すべき問題点 本発明の目的は、上記特性の改善に効果のある元素を見
出し、これにより新規な組成の、高速ボンディングに適
した高張力金ボンディングワイヤを得ることにある。
問題点を解決するための手段 本発明者らは種々の元素を検討した結果、バリウムを添
加すると優れた効果を奏することを見出した。
即ち本発明は、バリウムを０．０００３〜０．０１重量
％含有し、かつ純度が９９．９９％以上である高純度金
からなるボンディングワイヤである。
１」 バリウムを添加した金ワイヤは、バリウムを添加しない
従来の純金線に比べて常温及び高温における強度が大き
く、高速ボンダーによってボンディングを行っても線切
れ、ループのたるみ、軟化変形が生じない。又ボール形
状も一定でばらつきが少なく、極めて信頼性が高いもの
である。更に強度が強いのでワイヤ製造工程においても
伸線中の断線が少なく、加工性が良好である。
バリウムの添加量が０．０００３重量％より少ないと、
これらの改善効果がほとんど認められず、又ｏ、　ｏｉ
重量％を越えると、抵抗値が増大するとともにボール形
状が真球にならないので望ましくない。
又本発明の金ワイヤは、信頼性の点から最終的な金純度
が９９．９９％以上であることが必要である。
一定品質を維持するためには、望ましくは原料として９
９．９９９％以上の純度にまで間装された金を使用し、
これにバリウムを添加するのがよい。
ワイヤを製造するには、公知のいかなる方法でもよい。
例えば所定量のバリウムを金に添加して溶解鋳造し、鍛
造するか又は溝ロール加工で圧延した後、伸線加工して
直径数頭〜数十頭のワイヤを＄ｌ造することができる。
実施例 実施例１ ９９、９９９％以上の純度の金にバリウムを０．０００
５重量％添加して溶解し、鋳造した後、鍛造し、次いで
伸線加工して直径２５岬のボンディングワイヤを製造し
た。
得られたワイヤについて、室温における破断伸び率が約
４％となるように熱処理を行った後、常温における破断
強度及び２５０℃に２５秒間保持した後の破断強度を調
べ、破断伸び率とともに表１に示した。
実施例２〜４ バリウム添加量をそれぞれ０．００２重量％、ｏ、　ｏ
ｏｅ重量％、０．０１重量％とする以外は実施例１と同
様にしてボンディングワイヤを製造した。これらのワイ
ヤについて常温及び高温強度を測定し、破断伸び率とと
もに表１に示した。
尚、実施例１〜４で得られたワイヤは、ワイヤボンディ
ング時のボール形成性、ループ形状とも極めて良好であ
った。
比較例１ バリウムを添加しない純度９９．９９％以上の従来の純
金線（直径２５μｍ）について同様に破断強度を測定し
、結果を表１に示した。
表１ 表１より、本発明実施例のワイヤは、常温及び高温にお
いて適度な伸び率を維持しながら、強度が太き（改善さ
れていることが明らかである。
発明の効果 本発明のバリウムを添加した金ボンディングワイヤは、
常温及び高温における機械的強度が大きく、ボール形状
やループ形状も良好で安定しているなどボンディング性
能が極めて優れており、半導体のワイヤボンディング用
として信頼性が高いものである。又ボンディング作業時
の生産性、歩留りがよく、特に高速ボンディング用に適
している。

Claims (1)

    【特許請求の範囲】
  1. １　バリウムを０．０００３〜０．０１重量％含有し、
    かつ純度が９９．９９％以上である高純度金からなるボ
    ンディングワイヤ。
JP61120790A 1986-05-26 1986-05-26 ボンデイングワイヤ Granted JPS62278241A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP61120790A JPS62278241A (ja) 1986-05-26 1986-05-26 ボンデイングワイヤ
US07/074,421 US4752442A (en) 1986-05-26 1987-07-16 Bonding wire
FR878710843A FR2618945B1 (fr) 1986-05-26 1987-07-30 Fil de liaison destine a etre utilise dans un dispositif semi-conducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61120790A JPS62278241A (ja) 1986-05-26 1986-05-26 ボンデイングワイヤ

Publications (2)

Publication Number Publication Date
JPS62278241A true JPS62278241A (ja) 1987-12-03
JPH0555579B2 JPH0555579B2 (ja) 1993-08-17

Family

ID=14795062

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61120790A Granted JPS62278241A (ja) 1986-05-26 1986-05-26 ボンデイングワイヤ

Country Status (3)

Country Link
US (1) US4752442A (ja)
JP (1) JPS62278241A (ja)
FR (1) FR2618945B1 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4993622A (en) * 1987-04-28 1991-02-19 Texas Instruments Incorporated Semiconductor integrated circuit chip interconnections and methods
GB2231336B (en) * 1989-04-28 1993-09-22 Tanaka Electronics Ind Gold wire for the bonding of a semiconductor device
US5246707A (en) * 1990-04-26 1993-09-21 Haynes Duncan H Sustained release delivery of water-soluble bio-molecules and drugs using phospholipid-coated microcrystals, microdroplets and high-concentration liposomes
US5091188A (en) * 1990-04-26 1992-02-25 Haynes Duncan H Phospholipid-coated microcrystals: injectable formulations of water-insoluble drugs
US5364706A (en) * 1990-07-20 1994-11-15 Tanaka Denshi Kogyo Kabushiki Kaisha Clad bonding wire for semiconductor device
DE19544641B4 (de) * 1994-12-05 2005-08-25 Eads Deutschland Gmbh Solarzellen-Verbinder für Raumfahrt-Solargeneratoren
US7255877B2 (en) 1996-08-22 2007-08-14 Jagotec Ag Fenofibrate microparticles
JP3126926B2 (ja) * 1996-09-09 2001-01-22 新日本製鐵株式会社 半導体素子用金合金細線および半導体装置
CN1289091C (zh) * 1998-02-11 2006-12-13 Rtp药品公司 治疗炎症的药物组合物和相关用途
US5993735A (en) * 1998-05-29 1999-11-30 Kang; Do-Won Gold-based alloy for bonding wire of semiconductor device
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US6933468B2 (en) 2000-10-10 2005-08-23 Hobart Brothers Company Aluminum metal-core weld wire and method for forming the same
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Also Published As

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US4752442A (en) 1988-06-21
FR2618945B1 (fr) 1989-12-15
FR2618945A1 (fr) 1989-02-03
JPH0555579B2 (ja) 1993-08-17

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