JPH10275820A - 半導体素子ボンディング用金合金線 - Google Patents
半導体素子ボンディング用金合金線Info
- Publication number
- JPH10275820A JPH10275820A JP9077794A JP7779497A JPH10275820A JP H10275820 A JPH10275820 A JP H10275820A JP 9077794 A JP9077794 A JP 9077794A JP 7779497 A JP7779497 A JP 7779497A JP H10275820 A JPH10275820 A JP H10275820A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- gold alloy
- gold
- alloy wire
- bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
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Abstract
線を抑制し、またボンディング時の加熱温度を150℃
の低温で行ってもセカンド側接合性を向上させたワイヤ
ボンディング金合金線を提供すること。 【解決手段】 Agを0.4〜30重量%、Pd,Pt
のうち少なくとも1種を0.2〜5.0重量%、Y,L
a,Ru,Ir,Eu,Yb,Gd,Beのうち少なく
とも1種を0.0001〜0.05重量%、そして残部
が金及び不可避的不純物からなる金合金線。さらに30
重量%以下のCu,0.05重量%以下のCaを含むこ
とができる。
Description
と外部リード部を接続するために使用するボンディング
用金合金線に関する。
の半導体素子の電極と外部リードを接続する技術として
は、純度99.99重量%以上の高純度金に他の金属元
素を微量含有させた金合金線を用いて配線する超音波併
用熱圧着ボンディング法が主として用いられている。
より配線し、ループを形成した状態を図1に示す。1は
ICチップ、2はICチップ上のAl電極、3は金合金
線、4はリードフレーム、5はファースト側接合点、6
はセカンド側接合点である。最近、半導体装置は外部リ
ード材料として放熱性、コストを考慮して銅合金製のリ
ードフレームを用いる事が多くなってきた。銅合金製の
リードフレームを用いた場合、封止用樹脂とリードフレ
ームの熱膨張係数の差が大きく、半導体装置の作動によ
る温度上昇によってループを形成した金合金線に外部応
力が加わり、とりわけ半導体装置が過酷な熱サイクルの
環境に晒された場合、断線を生じ易くなるという問題が
ある。
求が高まる中で、ICチップの多ピン化及びこれに伴う
狭ピッチ化が要求されている。多ピン化、狭ピッチ化を
達成する為には、ループ形状が安定している事が必要で
ある。一方前記の超音波併用熱圧着ボンディング法で配
線を行う際、リードフレーム下部に設置された熱源によ
り150〜250℃で加熱される。この時加熱温度が高
いと接着性は良いものの、リードフレームのそりが生じ
易くなり、ループ形状にばらつきが生じ易くなる。また
加熱温度が低いと、ループ形状は安定するものの、低温
接合であるため金合金線とリードフレームの接合点(以
下セカンド側接合点という)での接合性に問題が生じて
くる。
とを抑制する為に、ボンディング時の加熱温度を150
℃と低温度で行いながらセカンド側接合点での接合性に
優れた金合金線が要求されている。本出願人は、特開平
7−305126号において、所定量のY,Pt,La
とAg,Pdの少なくとも1種を必須元素とした金合金
線とすることにより、熱サイクルの環境に晒された場合
の断線を制御することが出来ることを提案した。
案においては、前述の要求に対して一応の成果は得られ
ているものの、更なる信頼性の向上が求められている。
本発明は上述したような事情に鑑みてなされたものであ
り、その目的とするところは、銅合金製のリードフレー
ムを用いた半導体装置が過酷な熱サイクルの環境に晒さ
れた場合でも、断線を制御する効果を向上させ、またか
つボンディング時のループ形状を安定させる為に、ボン
ディング時の加熱温度を150℃と低温度で行いながら
セカンド側接合点での接合性、とりわけピール強度及び
振動破断性能が向上した金合金線を提供することであ
る。
重ねた結果、所定量のAgと所定量のPd,Ptのうち
少なくとも1種と所定量のY,La,Ru,Ir,E
u,Yb,Gd,Beのうち少なくとも1種及び残部が
金と不可避不純物からなる組成の金合金線とすることに
より、前述の目的を達成し得ることを知見し、本発明を
完成するに至った。
る。 (1)銀(Ag)を0.4〜30重量%、パラジウム
(Pd)、白金(Pt)のうち少なくとも1種を0.2
〜5.0重量%、Y,La,Ru,Ir,Eu,Yb,
Gd,Beのうち少なくとも1種を0.0001〜0.
05重量%、そして残部が金及び不可避不純物からなる
ことを特徴とする半導体素子ボンディング用金合金線。 (2)銀(Ag)が2.0〜10重量%、パラジウム
(Pd)、白金(Pt)のうち少なくとも1種が0.5
〜2.0重量%であることを特徴とする(1)記載の半
導体素子ボンディング用金合金線。 (3)更に銅(Cu)を30重量%以下含有することを
特徴とする(1)又は(2)記載の半導体素子ボンディ
ング用金合金線。 (4)更にカルシウム(Ca)を0.05重量%以下含
有することを特徴とする(1)、(2)又は(3)記載
の半導体素子ボンディング用金合金線。
9.99重量%以上に精製した高純度金を用いることが
好ましい。更に好ましくは99.995重量%以上であ
り、最も好ましくは99.999重量%以上である。こ
の為合金中の不可避不純物は0.01重量%未満が好ま
しい。更に好ましくは0.005重量%未満であり、最
も好ましくは0.001重量%未満である。
量%のPd,Ptのうち少なくとも1種と、0.000
1〜0.05重量%のY,La,Ru,Ir,Eu,Y
b,Gd,Beのうち少なくとも1種との共存におい
て、0.4〜30重量%のAgを含有した組成とするこ
とにより、前記課題を達成することができる。Agの含
有量が0.4重量%以上になると、0.4重量%未満の
ものと対比して、セカンド側接合性が向上する、即ち、
ピール強度が大きくなり、振動破断性能が向上する。一
方、Agの含有量が30重量%を越えると、熱サイクル
後の断線が生じ易くなり、セカンド側接合性も低下す
る。従って、Agの含有量は0.4〜30重量%であ
る。2.0〜10重量%がより好ましい。
が0.2重量%以上になると、0.2重量%未満のもの
と比べてセカンド側接合性が向上し、ピール強度が大き
くなり、振動数性能が向上する。一方、Pd,Ptのう
ち少なくとも1種の含有量が5.0重量%を越えると、
熱サイクル後の断線が生じ易くなり、セカンド側接合性
も低下し、またICチップに割れが生じ易くなる。従っ
て、Pd,Ptのうち少なくとも1種の含有量は0.2
〜5.0重量%である。0.5〜2.0重量%がより好
ましい。
で、かつPd,Ptのうち少なくとも1種が0.5〜
2.0重量%の場合、熱サイクル後の断線性能、セカン
ド側接合性ともに一段と優れたものになるので、好適で
ある。次に、Y,La,Ru,Ir,Eu,Yb,G
d,Beのうち少なくとも1種の含有量は0.0001
重量%未満になると、0.0001重量%以上のものと
対比して熱サイクル後の断線が生じ易くなり、セカンド
側接合性も低下する。一方、この含有量が0.05重量
%を超えると同様に断線が生じ易くなり、セカンド側接
合性も低下する。従って、Y,La,Ru,Ir,E
u,Yb,Gd,Beのうち少なくとも1種の含有量は
0.0001〜0.05重量%である。
重量%以下含む場合にも、同様の効果を奏することを確
認した。しかしCuの含有量が30重量%を越えると、
熱サイクル後の断線が生じ易くなり、セカンド側接合性
も低下する。Cuの下限は特に限定されないが、実用上
は0.001重量%である。さらに、Caを0.05重
量%以下含む場合にも、同様の効果を奏することができ
ることを確認した。下限は限定されないが、実用上は
0.0001重量%である。
明すると、前記高純度金に所定量の元素を添加し、真空
溶解炉で溶解した後インゴットに鋳造する。そのインゴ
ットに溝ロール、伸線機を用いた冷間加工と中間アニー
ルを施し、最終冷間加工により直径10〜100μmの
細線とした後最終アニールを施す。本発明の半導体素子
ボンディング用金合金線は半導体装置の実装に際して、
ICチップ等の半導体素子をリードフレームに接続する
超音波併用熱圧着ボンディング法で好ましく用いられ
る。特にはリードフレームとして銅製リードフレームを
用いる半導体装置用に好ましく用いられる。
量のAg,Pd,Yを添加し真空溶解炉で溶解した後、
鋳造して表1に示す組成の金合金インゴットを得、これ
に溝ロール、伸線機を用いた冷間加工と中間アニールを
施し、最終冷間加工により直径30μmとし、伸び率4
%となるように最終アニールを行った。
川株式会社製UTC−50型)を用いて加熱温度150
℃でICチップのAl電極と銅合金リードフレームとの
間を超音波併用熱圧着ボンディング法でボンディング
し、ピン数100個のボンディングした試料を作成し
た。次いで試料をエポキシ樹脂で樹脂封止した後、−1
0℃×30分と150℃×30分の熱サイクルテストを
100回行った。
により断線の有無を確認し、熱サイクル後の破断率を求
め、その結果を表1に示した。更に前記ボンディングし
た試料のリードフレーム側即ちセカンド側のピール強度
及び振動破断性能を測定した。ピール強度は直径30μ
mのピール荷重で表示した。振動破断性能の測定方法図
2を用いて説明する。図中、11はICチップ、12は
Al電極、13は金合金線、14,14′はリードフレ
ーム、15は鉄製台、16,16′はリードフレーム固
定用磁石、17は振動子である。リードフレーム14,
14′をリードフレーム固定用磁石16,16′で固定
し、ICチップ11を搭載した部分を振動子17で上下
方向(矢印方向)に振動させた。周波数100Hz、上下
振幅合計0.4mm、振動数20000回振動させた後、
400倍の金属顕微鏡を用いてリードフレーム側即ちセ
カンド側のワイヤの破断数を調査した。300箇所調査
し、その破断数の割合を振動破断率として表1に示し
た。
実施例1と同様にして直径30μmの線に仕上げ、熱サ
イクル後の破断率、セカンド側のピール強度及び振動破
断率を実施例1と同様にして測定し、その測定結果を表
1〜3に示した。
tのうち少なくとも1種を0.2〜5.0重量%、Y,
La,Ru,Ir,Eu,Yb,Gd,Beのうち少な
くとも1種を0.0001〜0.05重量%含有した組
成である実施例1〜45は熱サイクル後の破断率が1.
5%以下であり、ピール強度は7.3〜13.4g、振
動破断率は1.8%以下と優れた効果を示した。 (2)この中でもAgを2.0〜10重量%、Pd,P
tのうち少なくとも1種を0.5〜2.0重量%、Y,
La,Ru,Ir,Eu,Yb,Gd,Beのうち少な
くとも1種を0.0001〜0.05重量%含有した組
成では熱サイクル後の破断率が0%であり、ピール強度
は11.3〜13.4g、振動破断率は0%となり、一
段と優れた効果を示した。この為好ましくはAgを2.
0〜10重量%、Pd,Ptのうち少なくとも1種を
0.5〜2.0重量%、Y,La,Ru,Ir,Eu,
Yb,Gd,Beのうち少なくとも1種を0.0001
〜0.05重量%含有した組成とすることである。 (3)更に、Cuを0.01〜30重量%含有した組成
である実施例46〜51も前記効果が維持出来る。 (4)更に、Caを0.0005〜0.05重量%含有
した組成である実施例52〜58も同様に前記効果が維
持出来る。 (5)本発明の必須成分の何れも含有しない高純度金を
用いた比較例1は熱サイクル後の破断率が5.9%、ピ
ール強度は1.6g、振動破断率は4.9%と何れも悪
いものであった。 (6)高純度金に本発明の必須成分を所定量含有するも
のの、Agの含有量が0.4重量%未満である比較例
2、その含有量が20重量%を超える比較例3は熱サイ
クル後の破断率が2.2〜3.8%、ピール強度は3.
2〜4.8g、振動破断率は2.1〜3.6%と何れも
高純度金と対比すると効果は得られているものの、本願
の効果の方が優れていることが判る。 (7)高純度金に本発明の必須成分を所定量含有するも
のの、Pd,Ptのうち少なくとも1種の含有量が0.
2重量%未満である比較例4,5、その含有量が5.0
重量%を超える比較例6は熱サイクル後の破断率が2.
3〜2.4%、ピール強度は3.1〜4.6g、振動破
断率は2.1〜2.3%と何れも高純度金と対比すると
効果は得られているものの、本願の効果の方が優れてい
ることが判る。 (8)高純度金に本発明の必須成分を所定量含有するも
のの、Y,La,Ru,Ir,Eu,Yb,Gd,Be
のうち少なくとも1種を含有しない比較例7,8は熱サ
イクル後の破断率が2.3〜2.4%、ピール強度は
3.1〜4.6g、振動破断率は2.1〜2.3%と何
れも高純度金と対比すると効果は得られているものの、
本願の効果の方が優れていることが判る。
d,Ptのうち少なくとも1種、所定量のY,La,R
u,Ir,Eu,Yb,Gd,Beのうち少なくとも1
種を含有し残部が金及び所定量の不純物からなる組成を
有する半導体素子ボンディング用金合金線によれば、銅
合金製のリードフレームを用いた半導体装置が過酷な熱
サイクルの環境に晒された場合でも、断線を抑制する効
果が向上する、またボンディング時のループ形状を安定
させる為に、ボンディング時の加熱温度を150℃と低
温度で行いながらセカンド側接合点での接合性、とりわ
けピール強度及び振動破断性能が向上に効果的である。
前記含有成分に加えて所定量のCu又はそれに加えて所
定量のCaを含有した場合においても、同様の効果を示
す。
ディングした状態を示す。
を説明する図。
Claims (4)
- 【請求項1】 銀(Ag)を0.4〜30重量%、パラ
ジウム(Pd)、白金(Pt)のうち少なくとも1種を
0.2〜5.0重量%、Y,La,Ru,Ir,Eu,
Yb,Gd,Beのうち少なくとも1種を0.0001
〜0.05重量%、そして残部が金及び不可避不純物か
らなることを特徴とする半導体素子ボンディング用金合
金線。 - 【請求項2】 銀(Ag)を2.0〜10重量%、パラ
ジウム(Pd)、白金(Pt)のうち少なくとも1種が
0.5〜2.0重量%であることを特徴とする請求項1
記載の半導体素子ボンディング用金合金線。 - 【請求項3】 更に銅(Cu)を30重量%以下含有す
ることを特徴とする請求項1又は2記載の半導体素子ボ
ンディング用金合金線。 - 【請求項4】 更にカルシウム(Ca)を0.05重量
%以下含有することを特徴とする請求項1〜3のいずれ
か1項に記載の半導体素子ボンディング用金合金線。
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JP07779497A JP3628139B2 (ja) | 1997-03-28 | 1997-03-28 | 半導体素子ボンディング用金合金線 |
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JP07779497A JP3628139B2 (ja) | 1997-03-28 | 1997-03-28 | 半導体素子ボンディング用金合金線 |
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JPH10275820A true JPH10275820A (ja) | 1998-10-13 |
JP3628139B2 JP3628139B2 (ja) | 2005-03-09 |
Family
ID=13643908
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100427749B1 (ko) * | 2002-05-07 | 2004-04-28 | 엠케이전자 주식회사 | 반도체 소자 본딩용 금-은 합금 와이어 |
WO2006134823A1 (ja) * | 2005-06-14 | 2006-12-21 | Tanaka Denshi Kogyo K.K. | 高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
WO2006134825A1 (ja) * | 2005-06-14 | 2006-12-21 | Tanaka Denshi Kogyo K.K. | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性、高い耐樹脂流れ性および低い比抵抗を有するボンディングワイヤ用金合金線 |
WO2006134824A1 (ja) * | 2005-06-14 | 2006-12-21 | Tanaka Denshi Kogyo K.K. | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
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CN108796269A (zh) * | 2018-06-30 | 2018-11-13 | 汕头市骏码凯撒有限公司 | 金合金键合丝及其制造方法 |
CN116377278A (zh) * | 2023-03-31 | 2023-07-04 | 上杭县紫金佳博电子新材料科技有限公司 | 一种键合金丝及其制备方法 |
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1997
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Cited By (15)
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KR100427749B1 (ko) * | 2002-05-07 | 2004-04-28 | 엠케이전자 주식회사 | 반도체 소자 본딩용 금-은 합금 와이어 |
JP2006351701A (ja) * | 2005-06-14 | 2006-12-28 | Mitsubishi Materials Corp | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性、高い耐樹脂流れ性および低い比抵抗を有するボンディングワイヤ用金合金線 |
US7678999B2 (en) | 2005-06-14 | 2010-03-16 | Tanaka Denshi Kogyo K.K. | Gold alloy wire for bonding wire having high bonding reliability, high roundness of compression ball, high straightness and high resin flowability resistance |
WO2006134824A1 (ja) * | 2005-06-14 | 2006-12-21 | Tanaka Denshi Kogyo K.K. | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
JP2006351700A (ja) * | 2005-06-14 | 2006-12-28 | Mitsubishi Materials Corp | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
JP2006351699A (ja) * | 2005-06-14 | 2006-12-28 | Mitsubishi Materials Corp | 高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
WO2006134823A1 (ja) * | 2005-06-14 | 2006-12-21 | Tanaka Denshi Kogyo K.K. | 高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
JP4726205B2 (ja) * | 2005-06-14 | 2011-07-20 | 田中電子工業株式会社 | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
WO2006134825A1 (ja) * | 2005-06-14 | 2006-12-21 | Tanaka Denshi Kogyo K.K. | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性、高い耐樹脂流れ性および低い比抵抗を有するボンディングワイヤ用金合金線 |
JP4596467B2 (ja) * | 2005-06-14 | 2010-12-08 | 田中電子工業株式会社 | 高い接合信頼性、圧着ボールの高い真円性、高い直進性および高い耐樹脂流れ性を有するボンディングワイヤ用金合金線 |
US7857189B2 (en) | 2005-06-14 | 2010-12-28 | Tanaka Denshi Kogyo K.K. | Gold alloy wire for bonding wire having high initial bondability, high bonding reliability, high roundness of compression ball, high straightness, and high resin flowability resistance |
JP4726206B2 (ja) * | 2005-06-14 | 2011-07-20 | 田中電子工業株式会社 | 高い初期接合性、高い接合信頼性、圧着ボールの高い真円性、高い直進性、高い耐樹脂流れ性および低い比抵抗を有するボンディングワイヤ用金合金線 |
CN100439528C (zh) * | 2005-10-28 | 2008-12-03 | 贵研铂业股份有限公司 | 金合金材料 |
CN108796269A (zh) * | 2018-06-30 | 2018-11-13 | 汕头市骏码凯撒有限公司 | 金合金键合丝及其制造方法 |
CN116377278A (zh) * | 2023-03-31 | 2023-07-04 | 上杭县紫金佳博电子新材料科技有限公司 | 一种键合金丝及其制备方法 |
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