TWI518706B - 用於半導體裝置之接合線 - Google Patents

用於半導體裝置之接合線 Download PDF

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TWI518706B
TWI518706B TW101143571A TW101143571A TWI518706B TW I518706 B TWI518706 B TW I518706B TW 101143571 A TW101143571 A TW 101143571A TW 101143571 A TW101143571 A TW 101143571A TW I518706 B TWI518706 B TW I518706B
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group
silver
bonding wire
atoms
alloy
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TW101143571A
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TW201330006A (zh
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鄭恩均
柳在成
卓容德
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賀利氏材料科技公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C3/00—Profiling tools for metal drawing; Combinations of dies and mandrels
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
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Description

用於半導體裝置之接合線
本發明係關於一種接合線，且更特定言之係關於用於半導體裝置之接合線及使用該接合線之發光二極體(LED)封裝，其中銀(Ag)係用作主要成分。
接合線係用於電連接IC晶片或LED晶片與引線框之金屬線，且其一般係由金(Au)組成。
由於近期全球金(Au)價急劇升高，為了降低製造接合線之成本，已嘗試銅(Cu)線或經鈀(Pd)塗覆之銅(Cu)線用於接合線。一些製造商大規模生產銅(Cu)線，但是因為銅(Cu)之特性并不等同於金(Au)之特性，故持續進行對基於金(Au)之合金線之研究。
正在對金(Au)-銀(Ag)合金線作為基於金(Au)之合金線進行研究。金(Au)-銀(Ag)合金線具有可降低成本之優點，因為具有極佳導電性之銀(Ag)(即合金元素)與金(Au)形成完全固溶體。
然而降低之成本有限，因為大量金(Au)包含在金(Au)-銀(Ag)合金線中。此外，銅線及經鈀(Pd)塗覆之銅線不能用於LED封裝中，此係因為反射率，即LED之最重要功能劣化。
因此，迫切需要開發一種由具有極佳之可靠性及反射率特性同時具有成本降低作用之新穎材料組成之接合線。
本發明試圖提供一種用於半導體裝置之接合線及使用該接合線之LED封裝，其中銀(Ag)係用作主要成分，其具有提供可靠且能夠替代常規金(Au)合金接合線之合金接合線之優勢。本發明之另一實施例提供一種LED封裝，其中銀(Ag)合金接合線能夠防止銀(Au)合金線中之固有之表面變色且製造時應用高短路率。
本發明之一示例性實施例提供一種用於半導體裝置之接合線，其包括5 ppm至10 wt%之選自由鋅(Zn)、錫(Sn)及鎳(Ni)組成之群中之至少一者且其餘包括銀(Ag)及其他不可避免之雜質。
該接合線可進一步包括0.03 wt%至10 wt%之選自由銅(Cu)、鉑(Pt)、銠(Rh)、鋨(Os)、金(Au)及鈀(Pd)組成之群中之至少一者。
該接合線可進一步包括3 ppm至5 wt%之選自由鈹(Be)、鈣(Ca)、鎂(Mg)、鋇(Ba)、鑭(La)、鈰(Ce)及釔(Y)組成之群中之至少一者。
根據本發明之另一示例性實施例之發光二極體(LED)封裝包括LED晶片、用於向該LED晶片供電之引線框及用於連接該LED晶片與該引線框之接合線，其中該接合線係用於半導體裝置之接合線。
根據本發明之另一示例性實施例之製造用於半導體裝置之接合線之方法包括以下步驟：將包括5 ppm到10 wt%之選自由鋅(Zn)、錫(Sn)及鎳(Ni)中組成之群中之至少一者且其餘包括銀(Ag)及其他不可避免之雜質之銀(Ag)合金澆 注至模具中且熔融該銀(Ag)合金；連續鑄造該熔融銀(Ag)合金；及拉伸該經連續鑄造之銀(Ag)合金。
在製造用於半導體裝置之接合線之方法中，該銀(Ag)合金可進一步包括0.03 wt%至10 wt%之選自由銅(Cu)、鉑(Pt)、銠(Rh)、鋨(Os)、金(Au)及鈀(Pd)組成之群中之至少一者。
在製造用於半導體裝置之接合線之方法中，該銀(Ag)合金可進一步包括3 ppm至5 wt%之選自由鈹(Be)、鈣(Ca)、鎂(Mg)、鋇(Ba)、鑭(La)、鈰(Ce)及釔(Y)組成之群中之至少一者。
製造用於半導體裝置之接合線之方法進一步包括對經拉伸之銀(Ag)合金進行軟化熱處理之步驟。
根據如上所述之本發明之用於半導體裝置之接合線，可提供一種銀(Ag)合金接合線，其使用較金(Au)便宜之銀(Ag)作為主要成分且可藉由將合金原子添加至銀(Ag)，提供高生產率、防止表面變色及具有極佳之可靠性及機械特性。
從結合附圖之以下實施例，本發明之優點及特點及實現彼等之方法將變得更加明顯。然而，本發明不限於所揭示之實施例，且可以多種方式實現。提供該等實施例以完成本發明之揭示內容且允許一般技術者充分理解本發明之範疇。本發明係由申請專利範圍定義。圖式中所使用之相同參考數字係指相同或類似部件。
以下參照附圖詳細描述根據本發明之一示例性實施例之用於半導體裝置之接合線。對於參考，如果使得本發明之主旨不必要之含糊，則在本發明之描述中將省略已知之功能及結構之詳細描述。
根據本發明之一示例性實施例之用於半導體裝置之接合線包括5 ppm至10 wt%之選自由鋅(Zn)、錫(Sn)及鎳(Ni)組成之群中之至少一者且其餘包括銀(Ag)及其他不可避免之雜質。
該用於半導體裝置之接合線可進一步包括0.03 wt%至10 wt%之選自由銅(Cu)、鉑(Pt)、銠(Rh)、鋨(Os)、金(Au)及鈀(Pd)組成之群中之至少一者。
該用於半導體裝置之接合線可進一步包括3 ppm至5 wt%之選自由鈹(Be)、鈣(Ca)、鎂(Mg)、鋇(Ba)、鑭(La)、鈰(Ce)及釔(Y)組成之群中之至少一者。
銀(Ag)係形成根據本發明之接合線之基本材料，且其可具有99.99 wt%(四-九級)或更高之純度。
銀(Ag)具有極佳之導電性及面心立方(FCC)結構。當製造接合線時，銀(Ag)可導致成本降低之作用，因為其可替代一般用於常規接合線之金(Au)。
根據本發明之使用銀(Ag)作為主要成分之接合線之合金原子之合金比例及該等原子之特點如下。
第一組原子
第一組中之原子包括鋅(Zn)、錫(Sn)及鎳(Ni)。在半導體裝置中，銀(Ag)接合線或銀(Ag)合金接合線係連接至半 導體晶片之焊墊。在接合時，銀(Ag)接合線或銀(Ag)合金接合線由於外部環境之影響易於變色。根據本發明之第一組中之原子具有防止表面變色之功能。
多種實驗已顯示，當包括小於5 ppm之第一組原子時，第一組原子具有表面變色、低拉伸性及低可靠性之特點，且當包括0.01至10 wt%之第一組之原子時，彼等不具有表面變色及具有極佳之可拉伸性及可靠性之特點。因此，第一元素之適當含量係5 ppm至10 wt%。
第二組原子
第二組原子包括銅(Cu)、鉑(Pt)、銠(Rh)、鋨(Os)、金(Au)及鈀(Pd)。
第二組原子具有室溫及高溫下提高拉伸強度且在形成環後抑制環形狀之彎曲或變形(例如下垂或傾斜)之功能。此外，第二組原子具有改善可拉伸性特性從而提高生產率之功能。
當形成超低環時，第二組原子具有藉由提高球頸部分處之屈服強度來增加韌性之功能。因此，存在減少或消除球頸部分處之損壞之作用。特定而言，雖然接合線具有較小之直徑，但可抑制球頸部之斷裂。
銅(Cu)具有與銀(Ag)相同之FCC晶體結構且具有改善室溫及高溫強度及特定言之剪切強度且細化再結晶結構之功能。
此外，銅(Cu)在高溫及高濕度下具有比銠(Rh)及鈀(Pd)更高之可靠性，且少量銅(Cu)可改善銠(Rh)及鈀(Pd)之作 用。然而，如果添加大量銅(Cu)，則會產生氧化問題且因為接合線變硬化從而損壞焊墊。
添加銠(Rh)及鈀(Pd)以改善接合線之可靠性及MTBA。如果添加大量銠(Rh)及鈀(Pd)，則可增加電阻，因為接合線變得硬化從而可損壞焊墊且可縮短MTBA。
鉑(Pt)與銀(Ag)一起形成完全固溶體且可抑制壓縮球及鋁墊之黏著強度之劣化。
如果添加小於0.03 wt%之第二組原子，則沒有作用。如果添加超過10 wt%之第二組原子，則當形成自由空氣球時產生凹坑現象，使其難以形成完美球體。因此，第二組原子之適當含量係0.03 wt%至10 wt%。
第三組原子
第三組原子包括鈹(Be)、鈣(Ca)、鎂(Mg)、鋇(Ba)、鑭(La)、鈰(Ce)及釔(Y)。
第三組原子係均勻地分佈在銀(Ag)上且固溶於其中及在晶格中產生應力之相互作用，從而改善室溫下之強度。因此，第三組原子具有改善接合線之拉伸強度之功能，並在使環形狀安定及減少環高度偏差中具有極佳作用。
鈹(Ba)及鈣(Ca)經由增強之固溶體使銀(Ag)晶格變形。因此，鈹(Ba)和鈣(Ca)可增加接合線之機械強度，降低接合線之再結晶溫度及增加環高度。
如果添加小於3 ppm之第三組原子，則難以獲得以上作用。如果添加超過5 wt%之第三組原子，則因為拉伸強度降低(P7L15)，故在球頸部分可能發生破裂之危險。因 此，第三組原子之適當含量係3 ppm至5 wt%。
根據本發明之用於半導體裝置之接合線除了銀(Ag)及合金元素以外還可包括不可避免之雜質。然而，該等雜質不限制本發明之範疇。
根據本發明之另一示例性實施例之LED封裝可使用包括第一組原子至第三組原子之接合線來製造。
換言之，根據本發明之LED封裝100包括LED晶片10、用於向該LED晶片供電之引線框20及用於連接該LED晶片10與該引線框20之接合線50。
更特定而言，參照圖1，根據本發明之LED封裝100包括引線框20及安裝在於引線框20內形成之空腔30之底部上之LED晶片10。電極40及LED晶片10之頂表面上之電極焊墊係由接合線50接合。螢光物質60係塗覆於空腔30之內部且經硬化以完成LED封裝100。
根據本發明，使用銀(Ag)作為主要成分之銀(Au)合金接合線係用作接合線50。
根據本發明之另一示例性實施例之製造用於半導體裝置之接合線之方法包括以下步驟：將包括5 ppm到10 wt%之選自由鋅(Zn)、錫(Sn)及鎳(Ni)中組成之群中之至少一者且其餘包括銀(Ag)和其他不可避免之雜質之銀(Ag)合金澆注至模具中且熔融該銀(Ag)合金，連續鑄造該熔融銀(Ag)合金，及隨後拉伸該經連續鑄造之銀(Ag)合金。
該銀(Ag)合金進一步包括0.03 wt%至10 wt%之選自由銅(Cu)、鉑(Pt)、銠(Rh)、鋨(Os)、金(Au)及鈀(Pd)組成之組 中之至少一者。
該銀(Ag)合金進一步包括3 ppm至5 wt%之選自由鈹(Be)、鈣(Ca)、鎂(Mg)、鋇(Ba)、鑭(La)、鈰(Ce)及釔(Y)組成之群中之至少一者。
製造用於半導體裝置之接合線之該方法進一步包括對該經拉伸之銀(Ag)合金進行軟化熱處理之步驟。
參考根據本發明之製造接合線之方法及所製造之接合線之物理性質之評估結果，來更詳細地描述本發明。
<製造銀(Ag)合金接合線之方法>
將包括0.01 wt%之鋅(Zn)(即第一組原子)、0.5 wt%之金(Au)(即第二組原子)、0.5 wt%之鈀(Pd)(即第二組原子)、0.005 wt%之鈣(Ca)(即第三組原子)且其餘包括銀(Ag)及其他不可避免之雜質的銀(Au)合金澆注至模具中且隨後熔融。
將熔融銀(Au)合金連續鑄造，拉伸，隨後進行軟化熱處理以軟化由拉伸而硬化之接合線。
在用以評估本發明之接合線之可靠性的壓力室測試中，腔室條件包括85℃之溫度、2個大氣壓之壓力、85%之相對濕度及達504個小時或以上之5 V。
在該等條件下保存接合線材料之後，隨後藉由進行拉球測試(BPT)評估彼等。在進行BPT時，用於確定上升之標準係在球頸部不會產生斷裂且球黏著部分從焊盤處上升。
作為測試之結果，當球上升率係0%時，其被評估為極佳。當球上升率係高於0%至2%或更低時，其被評估為良 好，當球上升率係高於2%至5%或更低時，其被評估為平均，且當球上升率係高於5%時，其被評價為有缺陷。
表1顯示根據本發明之接合線之組分之含量。
在以下之表1中，第1號至第71號顯示根據本發明所製造之接合線之實驗例，且各接合線之組分之含量係顯示於該表中。各組分之含量之單位係重量百分比，且銀(Ag)之含量係指剩餘量(Bal)。
在表1中，實驗例1至8顯示藉由改變鋅(Zn)(即第一組原子)之含量所製造之接合線，實驗例9至16顯示藉由改變之錫(Sn)(即第一組原子)之含量所製造之接合線，且實驗例17至24顯示藉由改變鎳(Ni)所製造之接合線。
此外，實驗例25至31顯示藉由改變銅(Cu)(即第二組原子)之含量所製造之接合線，實驗例32及33顯示藉由改變鉑(Pt)(即第二組原子)之含量所製造之接合線，實驗例34及35顯示藉由分別添加銠(Rh)及鋨(Os)(即第二組原子)所製造之接合線，實驗例36至38顯示藉由改變金(Au)(即第二組原子)之含量所製造之接合線，及實驗例39至45顯示藉由改變鈀(Pd)(即第二組原子)之含量所製造之接合線。
實驗例46顯示藉由添加鈹(Be)(即第三組原子)所製造之接合線，實驗例47至50顯示藉由改變鈣(Ca)(即第三組原子)之含量所製造之接合線，及實驗例51至55顯示藉由分別添加鎂(Mg)、鋇(Ba)、鑭(La)、鈰(Ce)及釔(Y)(即第三組原子)所製造之接合線。
實驗例56至60顯示藉由改變鋅(Zn)(即第一組原子)之含量及銅(Cu)(即第二組原子)之含量所製造之接合線，實驗例61至64顯示藉由改變錫(Sn)(即第一組原子)之含量及金(Au)(即第二組原子)之含量所製造之接合線，且實驗例65至68顯示藉由改變鎳(Ni)(即第一組原子)之含量和鈀 (Pd)(即第二組原子)之含量所製造之接合線。
實驗例69顯示包括鋅(Zn)(即第一組原子)含量、金(Au)及鈀(Pd)(即第二組原子)及鈣(Ca)(即第三組原子)之接合線。實驗例70顯示包括鎳(Ni)(即第一組原子)、金(Au)及鈀(Pd)(即第二組原子)及釔(Y)(即第三組原子)之接合線。實驗例71顯示包括錫(Sn)(即第一組原子)、銅(Cu)、金(Au)及鈀(Pd)(即第二組原子)及鈰(Ce)(即第三組原子)之接合線。
以下表2顯示表1中所示之根據之本發明之接合線之物理特性之評估結果。
在表2中，表面變色係基於線之反射率所測量之結果，其中◎表示極佳狀態，○係良好狀態，△係正常狀態，而X係出錯狀態。
FAB係自由空氣球之縮寫。可藉由在二次接合之後使用EFO放電在毛細管尖端之線尾端形成用於進行球接合之圓形FAB。此處，關於所形成之FAB形狀而言，完美球體係表示為極佳狀態。所形成之FAB形狀具有完美球體但其稍稍偏離線中心之情況表示為相當佳狀態。所形成之FAB形 狀稍稍偏離完美球體及線之中心之情況表示為正常狀態。傾斜之球(FAB嚴重偏離線之中心)及對於所形成之FAB形狀接合不可能之情況表示出錯狀態。
FAB形狀特點亦表示為與表面變色之標記相同之含義。
在壓力鍋試驗(PCT)中，高濕度可靠性係表示為黏著強度(BPT值)。
銀(Ag)合金線具有30 μm之直徑，且PCT係在121℃下進行約96個小時。
在黏著強度之可靠性中，◎表示極佳狀態，○表示相當佳狀態，△表示正常狀態，X表示出錯狀態。
藉由每1 km之銀(Ag)合金線中斷線之數量測定可加工性。可加工性根據值之減少將具有更佳之特點。
在保存期限測試中，在銀(Ag)合金線中形成100 nm厚之氧化物層所花費之時間係由日期表示。保存期限測試根據該值之增加將具有更佳之特點。
從表1至2可看出鋅(Zn)、錫(Sn)及鎳(Ni)之含量(即第一添加組分)影響實驗例1至24中之銀(Ag)合金線之表面變色。
在實驗例1至24中可看出，銀(Ag)合金線在鋅(Zn)、錫(Sn)及鎳(Ni)之含量為0.01至10 wt%時具有極佳之表面變色、可拉伸性及可靠性，及FAB形狀特點係受5wt%或更高之鋅(Zn)、錫(Sn)及鎳(Ni)含量影響。
在實驗例25至31中可看出，銅(Cu)含量(即第二組組分)影響銀(Ag)合金線之表面變色。當銅(Cu)含量小於1%時， 銀(Ag)合金線之表面變色具有極佳特點。當銅(Cu)含量係0.1%或更高時，開始顯示極佳之可加工性特點。
另一方面，可看出銀(Ag)合金線之可靠性及FAB形狀受到不利影響。
在實驗例36至45中可看出，金(Au)及鈀(Pd)含量(即第二組組分)對於銀(Ag)合金線之可靠性及表面變色具有極佳之影響，及其中鈀(Pd)含量就可加工性而言具有更佳之特點。
在實驗例51至55中，鎂(Mg)、鋇(Ba)、鑭(La)、鈰(Ce)及釔(Y)(即第三組組分)顯示銀(Ag)合金線之黏著強度及拉伸特點。
在實驗例56至60中，可知包括鋅(Zn)及銅(Cu)之合金之特性。可看出，根據鋅(Zn)及銅(Cu)含量之增加，黏著強度增加且拉伸特性變得更佳。
在實驗例61至64中，可知包括錫(Sn)及金(Au)之合金之特性。可看出，根據錫(Sn)及金(Au)含量之降低，拉伸特性極佳，及根據錫(Sn)及金(Au)含量之增加，黏著強度及保存期限增加。
在實驗例65至68中，可知曉包括鎳(Ni)及鈀(Pd)之合金之特性。可看出根據鎳(Ni)及鈀(Pd)含量之增加，強度得到改善且鈀(Pd)之拉伸特性及強度得到改善。
在實驗例69至71中，可知曉包括金(Au)及鈀(Pd)之三種合金或更多種組成之銀(Ag)合金線之特性。如果金(Au)及鈀(Pd)之含量增加，則黏著強度及拉伸特性變得極佳，但 電特性趨於降低。如果包括金(Au)及鈀(Pd)，則可靠性係極佳特點，且存在保存期限增加之極佳特點。
雖然已基於本發明之示例性實施例描述本發明，但關於本發明之一般技術者將瞭解可在不脫離本發明之技術精神或本質特徵下以多種方式實現本發明。
因此，應瞭解，從所有態樣而言上述實施例係說明性而非限制性。本發明之範疇係由附屬申請專利範圍而非詳細說明定義，且本發明應解釋為涵蓋由附屬申請專利範圍及其相當項之含義及範疇所引出之所有改良或變化。
10‧‧‧LED晶片
20‧‧‧引線框
30‧‧‧空腔
40‧‧‧電極
50‧‧‧接合線
60‧‧‧螢光物質
100‧‧‧LED封裝
圖1係示意性顯示LED封裝之結構之圖示，該LED封裝應用根據本發明之一示例性實施例之銀(Ag)合金接合線。
10‧‧‧LED晶片
20‧‧‧引線框
30‧‧‧空腔
40‧‧‧電極
50‧‧‧接合線
60‧‧‧螢光物質
100‧‧‧LED封裝

Claims (3)

  1. 一種發光二極體(LED)封裝，其包括LED晶片、用於向該LED晶片供電之引線框及用於連接該LED晶片與該引線框之接合線，其中該接合線為用於半導體裝置之接合線，其包括5ppm至10wt%之鎳(Ni)；且其餘包括銀(Ag)及其他不可避免之雜質。
  2. 如請求項1之發光二極體(LED)封裝，其中該接合線進一步包括0.03wt%至10wt%之選自由銅(Cu)、鉑(Pt)、銠(Rh)、鋨(Os)、金(Au)及鈀(Pd)組成之群中之至少一者。
  3. 如請求項1或請求項2之發光二極體(LED)封裝，其中該接合線進一步包括3ppm至5wt%之選自由鈹(Be)、鈣(Ca)、鎂(Mg)、鋇(Ba)、鑭(La)、鈰(Ce)及釔(Y)組成之群中之至少一者。
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