TWI700754B - 半導體裝置用接合線 - Google Patents

半導體裝置用接合線 Download PDF

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TWI700754B
TWI700754B TW107143058A TW107143058A TWI700754B TW I700754 B TWI700754 B TW I700754B TW 107143058 A TW107143058 A TW 107143058A TW 107143058 A TW107143058 A TW 107143058A TW I700754 B TWI700754 B TW I700754B
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Taiwan
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concentration
aforementioned
bonding wire
coating layer
layer
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TW107143058A
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TW201921535A (zh
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宇野智裕
萩原快朗
小山田哲哉
小田大造
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日商日鐵化學材料股份有限公司
日商日鐵新材料股份有限公司
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Publication of TW201921535A publication Critical patent/TW201921535A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K35/0227—Rods, wires
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Abstract

本發明之課題在於提供一種可減少異常迴路產生之接合線。

本發明之解決手段的特徵在於包含：芯材，包含超過50mol%之金屬M；中間層，係形成在前述芯材之表面上，且由Ni、Pd、前述金屬M及不可避免之不純物構成，而前述Ni濃度係大於8mol%且在80mol%以下；及被覆層，係形成在前述中間層上，且由Ni、Pd及不可避免之不純物構成，而前述Pd濃度係50mol%以上且100mol%以下，又，前述金屬M係Cu或Ag，且前述被覆層之Ni濃度係比前述中間層之Ni濃度低。

Description

半導體裝置用接合線 技術領域
本發明係有關於用以連接半導體元件上之電極及電路配線基板(引線框、基板、膠帶等)之配線的半導體裝置用接合線。
背景技術
目前，主要使用線徑大約20至50μm之細線(接合線)，作為接合半導體元件上之電極及外部端子之半導體裝置用接合線(以下，稱為接合線)。接合線一般係藉由超音波併用熱壓接合方式接合。該方式係使用通用接合裝置，使接合線通過其內部用以連接之毛細管夾具等。為連接接合線，首先，產生電弧放電而加熱熔融線末端，接著藉由表面張力形成球部後，在150至300℃之範圍內加熱之半導體元件上，加壓附著接合(球接合)。接著，藉由超音波直接接合(楔接合)線於外部引線側。
近年來，半導體安裝之構造、材料、連接技術等急速地多樣化，例如，安裝構造除了現行使用引線框之QFP(四面扁平安裝：Quad Flat Packaging)以外，使用基板、 聚醯亞胺膠帶等之BGA(球格柵陣列：Ball Grid Array)、CSP(晶片級封裝：Chip Scale Packaging)等之新形態亦已實用化，且尋求進一步提高迴路性、接合性、量產使用性等之接合線。
接合線之材料到目前為止主要使用高純度4N系(純度>99.99質量%)之金。但是，由於金為高價，所以希望有材料費便宜之他種金屬的接合線。
專利文獻1揭示一種接合線作為材料費便宜，且具優異導電性之接合線，該接合線具有以銅為主成分之芯材，及設於前述芯材上且含有成分及組成中任一者或兩者不同之金屬M及銅的外層。
先前技術文獻 專利文獻
專利文獻1：日本特開2010-212697號公報
發明概要
但是，上述專利文獻1之情形中，形成迴路時，由於芯材與外層之應變或抗變形性的差異，所以有接合線變形且產生異常迴路之虞。
因此，本發明之目的在於提供一種可減少異常迴路產生之接合線。
本發明之請求項1之接合線的特徵在於包含：芯 材，包含超過50mol%之金屬M；中間層，係形成在前述芯材之表面上，且由Ni、Pd、前述金屬M及不可避免之不純物構成，而前述Ni濃度係大於8mol%且在80mol%以下；及被覆層，係形成在前述中間層上，且由Ni、Pd及不可避免之不純物構成，而前述Pd濃度係50mol%以上且100mol%以下，又，前述金屬M係Cu或Ag，且前述被覆層之Ni濃度係比前述中間層之Ni濃度低。
此外，本發明之請求項4之接合線的特徵在於前述被覆層更包含Au，且具有表面層，而該表面層係形成在前述被覆層上，且由包含Au與Pd之合金構成，並且前述Au濃度係10mol%以上且70mol%以下，且Au與Pd之合計濃度係80mol%以上，又，前述被覆層之Au濃度係比前述表面層之Au濃度低。
依據本發明之請求項1，藉由中間層緩和芯材與被覆層之抗變形性的差異，可減少產生異常迴路之蛇形迴路(snake loop)。
依據本發明之請求項4，藉由表面層抑制線表面之硫化及氧化而減少滑動阻力，除了異常迴路之蛇形迴路以外，亦可減少產生下垂迴路(sagging loop)。
10:接合線
12:球接合
14:楔接合
16:蛇形迴路
18:下垂迴路
圖式之簡單說明
圖1係顯示因接合線異常變形之不良形態，且圖1A顯示蛇形迴路不良，而圖1B顯示下垂迴路不良。
用以實施發明之形態
1.實施形態
(全體構造)
以下，詳細說明本發明之實施形態。本實施形態之接合線具有包含超過50mol%之金屬M的芯材，形成在前述芯材之表面上的中間層，及形成在前述中間層上之被覆層。金屬M係Cu或Ag。
中間層係且由Ni、Pd、前述金屬M及不可避免之不純物構成，且前述Ni濃度係大於8mol%且在80mol%以下，宜為15mol%以上且80mol%以下。被覆層係由Ni、Pd及不可避免之不純物構成，且前述Pd濃度係50mol%以上且100mol%以下。被覆層之Ni濃度係比前述中間層之Ni濃度低。此外，在本說明書中濃度係mol%，且係除了芯材以外，依據歐格電子光譜法(AES：Auger Electron Spectroscopy)在深度方向上測量時之各層的最高濃度。
包含於被覆層中之Pd與構成芯材之Cu或Ag不同處在於強度為2倍以上，再結晶溫度為400℃以上。相對於此，Ni之強度及再結晶溫度係Cu或Ag與Pd之大約中間。因此，在本實施形態之情形中，中間層係包含Ni與Pd，及，Cu或Ag之合金，且Ni濃度係大於8mol%且在80mol%以下，宜為15mol%以上且80mol%以下，由於包含比被覆層多之Ni，所以中間層之強度及再結晶溫度為芯材與被覆層之大約中間。因此，接合線藉由中間層緩和芯材與被覆層之抗 變形性的差異，可減少異常迴路之產生。
以下參照圖1A說明異常迴路。圖1A所示之接合線10係藉由球接合12及楔接合14接合，且產生蛇形迴路16作為異常迴路。蛇形迴路16在接近楔接合14之下降區域中，具有扭曲多數次而在接合線10產生彎曲之形狀。蛇形迴路16在球接合12與楔接合14之高低差大且跨距長之梯形迴路中產生頻率高。例如，球接合12與楔接合14之高低差為500μm以上，距離(跨距)為3mm以上，下降區域之長度為800μm時產生頻率高。
中間層由於Ni濃度為大於8mol%且在80mol%以下，可更確實地緩和芯材與被覆層之抗變形性之差異。中間層之Ni濃度超過80mol%時，在球部內產生氣泡。
產生有氣泡之球部接合在電極上時，偏離線中心而產生球部變形之偏芯變形、偏離真圓之形狀不良的橢圓變形、花瓣變形等，成為產生由電極面露出、接合強度降低、晶片損傷、生產管理上不便等之問題的原因。如此初期接合之不良有時會誘發後述之接合信賴性的降低。
中間層之厚度宜為8至80nm。接合線由於中間層厚度為8至80nm，可更確實地緩和芯材與被覆層之抗變形性之差異。如果中間層厚度超過80nm，在低溫下連接接合線時，由於在接合界面之擴散速度變慢，所以楔接合之強度下降。
在本實施形態之情形中，在被覆層與中間層之邊界，即使Ni之濃度為大於8mol%，只要Pd之濃度為 50mol%以上，本說明書亦以該區域為被覆層。
被覆層由於Pd之濃度為50mol%以上且100mol%以下，可進一步控制接合線表面之氧化。另外，接合線由於表面氧化，所以楔接合之強度會下降，且會容易產生樹脂密封時之線表面腐蝕等。
此外，被覆層亦可包含金屬M。接合線由於被覆層包含金屬M，可提高減少在球部與頸部之邊界附近成為問題之唇狀破壞的效果。
芯材在金屬M為Cu時，亦可含有選自於P、Ti、B、Ag之1種以上元素。此時，選自於P、Ti、B、Ag之1種以上元素由於前述元素濃度占線全體總計在0.0005質量%以上且0.02質量%以下之範圍內，所以可提高加壓附著球之真圓性。另外，近年之最大密度安裝係要求狹間距連接。因此，球接部之變形形狀是重要的，且必須抑制花瓣狀、偏芯等之異形，以提高真圓性。
此外，芯材在金屬M為Cu時，亦可含有選自於Pd、Ni之1種以上元素。此時，選自於Pd、Ni之1種以上元素由於前述元素濃度占線全體總計在0.2質量%以上且2.0質量%以下之範圍內，所以可提高接合信賴性。
另外，接合信賴性在如汽車用半導體等在高溫下使用之用途的情形下，大多在接合線與電極之接合部產生問題。接合信賴性可藉由高溫加熱試驗等之加速試驗，評價上述接合部強度之降低，及電阻之上升等。
芯材在金屬M為Ag時，亦可含有選自於Pd、Ni、 Cu之1種以上元素。此時，選自於Pd、Ni、Cu之1種以上元素由於前述元素濃度占線全體總計在0.5質量%以上且5.0質量%以下之範圍內，可提高上述接合信賴性。
此外，本實施形態之接合線亦可在上述被覆層上，具有由包含Au及Pd之合金構成之表面層。此時，被覆層更包含Au。又，被覆層亦可含有少量之Ni、Cu。
表面層之Au之濃度為10mol%以上且70mol%以下，且Au及Pd之合計濃度為80mol%以上。在與被覆層之邊界中，即使Pd之濃度為50mol%以上，只要Au之濃度為10mol%以上，在本說明書中亦為表面層。
由包含Au及Pd之合金構成之表面層可抑制線表面之硫化及氧化而減少滑動阻力。因此接合線藉由具有表面層，除了蛇形迴路以外，亦可減少圖1B所示之下垂迴路18之產生。下垂迴路18係，與蛇形迴路16同樣地，在球接合12與楔接合14之高低差大且跨距長之梯形中產生頻率高。此外，下垂迴路18具有比蛇形迴路16緩和地蛇行之形狀。
表面層由於Au之濃度為10mol%以上且70mol%以下，且Au及Pd之合計濃度為80mol%以上，可更確實地減少滑動阻力。表面層之Au之濃度超過70mol%時，產生球部呈橢圓形之不良。如此之橢圓形球部不適合球接合於小電極之高密度安裝。
表面層、被覆層及中間層之總厚度宜為25至200nm。藉由在上述範圍內，接合線可抑制楔接合部翹起 之剝離不良，以提高楔接合性。表面層、被覆層及中間層之總厚度為40至150nm時，可更確實地提高楔接合性，故更理想。
表面層之厚度宜為3至30nm。藉由在上述範圍內，接合線可更確實地減少蛇形迴路及下垂迴路之產生。
(製造方法)
接著說明本實施形態之接合線之製造方法。接合線之製造需要，藉由在芯材之表面上形成中間層、被覆層、及依情形之表面層的步驟，使其具有希望粗度之加工步驟，熱處理步驟。
在銅芯材之表面上形成中間層、被覆層及表面層的方法包括鍍敷法、蒸鍍法、熔融法等。鍍敷法不論是電鍍法、無電電鍍法都可製造。稱為觸擊電鍍(strike plating)、快速電鍍之電鍍法的鍍敷速度快，且基底之密接性亦良好。無電電鍍法使用之溶液分成取代型及還原型，且膜薄時即使只是取代型電鍍亦足夠，但是形成厚膜時在取代型鍍敷後階段地實施還原型鍍敷是有效的。無電解電鍍法之裝置等簡便，且容易，但是比電鍍法需要更多時間。
蒸鍍法可利用離子鍍敷及真空蒸鍍等之物理吸附，及電漿CVD等之化學吸附。這些都是乾式，且不需要膜形成後之洗淨，不必擔心洗淨時之表面污染等。
在實施鍍敷或蒸鍍之階段，形成目標線徑之希望膜的方法，及在粗徑芯材上形成膜後，多數次拉線到希望 線徑為止之方法都是有效的。前者之最終徑之膜形成的製造、品質管理簡便，而後者之膜形成及拉線之組合有利於提高膜與芯材之密接性。各個形成法之具體例可為在電鍍液中一面連續地掃描一面形成膜之方法，或，在電解或無電之鍍敷浴中浸漬粗銅線而形成膜後，拉線到達最終徑之方法等。
形成中間層、被覆層、表面層後之加工步驟可依目的選擇、使用輥軋、錘鍛、模拉線等。藉由加工速度、軋縮率或模面縮率等控制加工組織、差排、晶界之缺陷等亦會影響中間層、被覆層、表面層之構造、密接性等。
熱處理步驟係在芯材與中間層、中間層與被覆層、被覆層與表面層之各界面，助長各構成中包含之金屬元素的互相擴散。依據目的，實施1次或多數次熱處理是有效的。為在中間層、被覆層、表面層之構造中獲得希望之膜厚、組成，需要以嚴格精度控制%等級之濃度、nm等級之膜厚的製造技術。熱處理步驟分成在膜形成後之退火、在加工途中之退火、在最終徑時之精加工退火，且選擇、使用該等是重要的。
只單純地加熱線並不能控制接合線之表面及內部的各金屬元素分布。即使原樣地使用在通常之線製造中使用之最終線徑的消除加工應力退火，由於芯材、中間層、被覆層、表面層之密接性降低，迴路控制亦會不安定，且難以控制線長方向之各層的均質性、線斷面之各層的分布。因此，熱處理之時序、溫度、速度、時間等之控制是重要 的。
藉由組合加工與熱處理以控制擴散之進行度，可控制希望之膜厚、組成、構造。熱處理前之加工履歷係與在中間層、中間層與被覆層、被覆層與表面皮膜之各界面之組織等有關，因此亦會影響藉熱處理之擴散舉動。藉由不論在何加工階段進行處理，最終之各層組成、厚度等都會變化。
一面連續地掃描線一面進行熱處理，作為熱處理法，而且，不使一般熱處理之爐內溫度為一定，而在爐內使溫度傾斜，藉此可容易地量產具有本實施形態特徵之芯材、中間層、被覆層、表面皮膜之接合線。具體之事例包括局部地導入溫度傾斜之方法，使溫度在爐內變化之方法等。為抑制接合線之表面氧化，一面使N2及Ar等之惰性氣體在爐內流動一面加熱亦是有效的。
溫度傾斜之方式中，使溫度在爐入口附近之正溫度傾斜(相對線之掃描方向溫度上升)、安定溫度區域、在爐出口附近之負溫度傾斜(相對線之掃描方向溫度下降)等多數區域傾斜是有效的。藉此，在爐入口附近不產生各層與芯材之剝離而使密接性提高，且在安定溫度區域促進各金屬元素之擴散而形成希望之濃度梯度，進一步在爐出口附近抑制在表面之銅的過度氧化，藉此可改善獲得之接合線之接合性、迴路控制性等。為獲得如此之效果，出入口之溫度的溫度梯度最好設為10℃/公分以上。
使溫度變化之方法中，將爐內分割成多數區域， 接著在各區域進行不同之溫度控制亦是有效的。例如，將爐內分割成3個地方以上，且獨立地進行溫度控制，接著使爐之兩端比中央部低溫，藉此獲得與溫度傾斜之情形同樣之改善效果。此外，為抑制接合線之表面氧化，使爐之出口側成為銅氧化速度慢之低溫，藉此獲得楔接合部之接合強度的上升。
此外，熔融法具有係使各層或芯材之任一者熔融而鑄造之方法，且藉由以大約1至50mm之粗徑連接各層與芯材後拉線而具優異生產性，及與鍍敷法、蒸鍍法相比各層之合金成分設計容易，且強度、接合性等之特性改善亦容易等優點。具體之步驟可分為在預製成之芯材周圍，依序鑄造構成各層之金屬而形成各層之方法，及使用由預製成之中間層、被覆層、表面層構成之中空圓柱，在其中空圓柱之內部鑄造例如熔融銅或銅合金而藉此形成芯材之方法。較佳地，後者之在中空圓柱鑄造銅之芯材之方式，可在中間層及被覆層中容易地安定形成銅之濃度梯度。此外，熔融法亦可省略用以使銅擴散於中間層及被覆層中之熱處理作業，但是亦可預料的是可藉由實施熱處理以調整中間層及被覆層內之銅分布進一步改善特性。
另外，在使用如此之熔融金屬之情形下，可藉由連續鑄造製造芯材及各層之至少一者。藉由該連續鑄造法，與上述鑄造方法比較，步驟簡化，而且亦可使線徑細化而提高生產性。
此外，由於形成不含金屬M之被覆層之製法可 抑制在被覆層內之金屬M之體擴散、晶界擴散等，所以熱處理溫度低而為理想。具體而言，將熱處理分成2次以上，在加工途中之粗線之中間熱處理為高溫，而最終線徑之最終熱處理則低溫化，藉此形成不含金屬M之被覆層是有效的。例如，實施2種熱處理之線徑差宜為2倍以上，且溫度差為100℃以上。
關於本實施形態之接合線之連接，在球部形成時使用之遮蔽氣體除了標準之5vol%H2+N2氣體以外，亦可使用純N2氣體。產生電弧放電且在線末端形成球部時，藉由吹送遮蔽氣體，使電弧放電安定化，可抑制熔融之球部表面的氧化。
2.實施例
依據試料、評價內容、評價結果說明實施例。
(試料)
作為接合線之原料，芯材使用Cu、Ag使用純度大約99.99質量%以上之高純度材料，且被覆層之Pd、中間層之Ni、表面層之Au準備純度99.9質量%以上之鍍敷液。
準備直徑大約1至3mm之粗徑線，且在該線表面上藉由電鍍法形成中間層、被覆層、表面層等。電鍍液使用針對電子零件或半導體之市售鍍敷液。
在由芯材、中間層、被覆層構成之接合線的情形下，依照形成鍍Ni處理之中間層後，形成鍍Pd處理之被覆層的順序實施2階段處理。此外，在由芯材、中間層、被覆層、表面層構成之接合線的情形下，依照形成鍍Ni 處理之中間層後，形成鍍Pd處理之被覆層、形成鍍Au處理之表面層的順序實施3階段處理。為提高密接性，依需要地，在實施最後鍍敷處理後，實施加熱處理。加熱條件係在氮環境中在150至300℃之低溫下批式加熱30分鐘。此外，依需要地，在形成中間層後實施加熱處理。其加熱條件為上述範圍。
形成中間層、被覆層、表面層等後，藉拉線細加工最終線徑到18至20μm為止。拉線速度係在10至100m/分之範圍內，且使用拉線模之各個面縮率為3至15%之模。
拉線到最終徑後，實施精加工退火以消除加工應力且使伸長值在5至20%之範圍內。依需要地，在模拉線到線徑30至100μm後，實施中間退火，再實施拉線加工。
線之精加工退火或中間退火係利用一面連續地掃描一面連續地加熱線的連續退火。溫度設定於300至700℃之範圍內，且線掃描速度係在10至100mm/分之範圍內調整。配合溫度分布，亦使線掃描速度等適當化。退火之環境氣體使用氮氣以達成抑制氧化之目的。氣體流量係在0.0002至0.004m3/分之範圍內調整。使拉線加工途中之中間退火、最終徑之精加工退火適當組合。中間退火係在拉線加工途中之線徑0.1至1mm，對線進行退火。
接合線之連接係使用市售之自動接合機(K&S公司製)，進行球/楔接合。藉電弧放電在末端製作球部，著將該球部接合在矽基板上之電極膜，且將線另一端楔接合在引線端子上。為抑制球熔融時之氧化，對線末端吹送 5vol%H2+N2氣體。接合溫度為通常之175℃，低溫之150℃。作為接合對象之矽基板上的電極使用鋁電極(Al-0.5%Cu膜)，且其厚度為0.8μm。另一方面，楔接合之對象使用引線框上之Au/Pd電極。
線表面之膜厚測量係使用AES之深度分析。一面藉Ar離子濺鍍一面在深度方向上測量，且深度之單位係依SiO2換算來表示。接合線中之合金元素的濃度係利用AES或感應耦合電漿(ICP：Inductively Coupled Plasma)分析。芯材含有之元素與形成在線表面之中間層、被覆層、表面層之元素重複時，芯材含有之元素的濃度係藉由使用在芯材截面之電子束微分析儀(EPMA：Electron Probe MicroAnalyser)、能量分散型X光分析(EDX：Energy Dispersive X-ray spectrometry)、AES之分析方法求得的濃度平均值。符合此之元素係Pd、Ni、Au元素。另一方面，芯材含有之元素係Pd、Ni、Au以外之元素，且與中間層、被覆層、表面層之元素不同時，利用藉由線全體之ICP分析測量的濃度。
(評價內容)
關於接合部之高溫信賴性，將在接合後已樹脂密封之試料，在處理溫度185℃、處理時間2000小時之條件下加熱處理後，評價60條接合線之電氣特性。電阻上升至初期之3倍以上之接合線的比例為30%以上時由於接合不良所以藉×記號，電阻上升至初期之3倍以上之接合線的比例為5%以上且小於30%之範圍時由於可使用信賴性要求不嚴 格之IC所以藉△記號，電阻上升至初期之3倍以上之接合線的比例為小於5%且上升至1.5倍以上之接合線之比例為10%以上且小於30%之範圍時由於沒有實用上之問題所以藉○記號，如果電阻上升至1.5倍以上之接合線之比例為小於10%由於為良好所以藉◎記號，表示於表1、2中之「高溫信賴性」的欄中。
關於蛇形迴路不良之評價，藉由中跨距高段差及長跨距高段差之2種迴路來評價。中跨距高段差係線長度為3.5mm且下降區域之長度為0.5mm，並且連接成梯形迴路使由楔接合部到迴路最高位置之高低差為0.7mm。長跨距高段差係線長度為5mm且下降區域之長度為0.7mm，並且連接成梯形迴路使由楔接合部到迴路最高位置之高低差為0.8mm。線徑係20μm。藉光學顯微鏡由上方觀察迴路之下降區域，如果1條迴路之下降區域中彎曲2次則判定為蛇形迴路不良，且評價500條迴路連接之產生頻率。該產生頻率超過10%時判定為不良且藉×記號表示，超過5%且10%以下時由於量產性令人擔心所以藉△記號，超過2%且5%以下時由於為良好所以藉○記號，0至2%以下時判斷為迴路形狀安定且藉◎記號，表示於表1、2中之「蛇形迴路」的欄中。
關於下垂迴路不良之評價，線長度為5mm且下降區域之長度為1.5mm，並且連接成梯形迴路使由楔接合部到迴路最高位置之高低差為0.7mm。線徑係20μm。藉光學顯微鏡由上方觀察迴路，迴路以0.2mm以上之長周期蛇 行時，判斷為下垂迴路不良，且評價400條迴路連接之產生頻率。該產生頻率超過10%時判定為不良且藉×記號表示，超過5%且10%以下時由於量產性令人擔心所以藉△記號，超過2%且5%以下時由於比較良好所以藉○記號，0至2%以下時判斷為沒有下垂迴路不良之問題且藉◎記號，表示於表1、2中之「下垂迴路」的欄中。
楔接合性係藉由接合線接合在引線電極時之翹起不良的產生頻率來評價。接合線製造後之保管係置於在線軸箱之狀態下在線軸箱內之大氣中在常溫下只保管30天。在接合條件方面，稍微減少超音波輸出，進一步使平台溫度為160℃之低溫，接著誘發楔接合之分離。藉由1000條之接合線評價分離產生頻率。翹起不良數為10條以上時由於必須改善所以藉×記號，4至9條時藉△記號，1至3條時由於大致良好所以藉○記號，不良為零時判斷為楔接合性優異而藉◎記號，表示於表1、2中之「楔接合性」的欄中。
加壓附著球部之接合形狀的判定係觀察200條接合之球部，且評價形狀之真圓性、異常變形不良、尺寸精度等。線徑使用20μm，且以初期球徑/線徑之比率為大約2藉由嚴格之小球接合來評價。
如果偏離真圓之異向性或花瓣狀等不良球形狀為5條以上則判定為不良且藉×記號，偏離真圓之不良球形狀為2至4條時分成2種情形，如果異常變形產生1條以上由於希望改善量產所以藉○記號，如果不良球形狀為1條以 下由於為良好所以藉◎記號，表示於表1、2中之「加壓附著球形狀」的欄中。
[評價結果]
實施例1至18之接合線係由芯材、中間層、被覆層構成，且確認中間層之Ni濃度為15至80mol%，可減少蛇形迴路不良。另一方面，不含中間層之比較例1、2、5，或中間層之Ni濃度在8mol%以下或85mol%以上之比較例3、4、6之蛇形迴路不良以高頻率產生。
實施例2至5、7至18確認由於中間層之厚度為8至80nm，可減少楔接合之翹起不良。
實施例19至35之接合線係由芯材、中間層、被覆層、表面層構成，且確認中間層之Ni濃度為15至80mol%，且進一步表面層之Au濃度為10mol%以上且70mol%以下，Au及Pd之合計濃度為80mol%以上，可減少蛇形迴路不良及下垂迴路不良。另一方面，不含中間層之比較例7、9，或中間層之Ni濃度在8mol%以下之比較例8、10以高頻率產生蛇形迴路不良及下垂迴路不良。此外，表面層之Au濃度在上述範圍外之比較例11雖然可減少蛇形迴路不良，但是產生下垂迴路不良。
實施例19至21、24至35之接合線確認由於表面層、被覆層及中間層之總厚度為25至200nm，可減少楔接合之翹起不良。此外，實施例19至21，24至29，31至35之確認接合線由於表面層、被覆層及中間層之總厚度為40至150nm，可更確實地減少楔接合之翹起不良。
實施例19至22、25至35之接合線確認由於表面層之厚度為3至30nm，可更確實地減少蛇形迴路不良及下垂迴路不良之產生。
在實施例3、4、6至9、20、21、23至26之接合線之情形中，確認由於芯材之前述金屬M為Cu，且含有選自於P、Ti、B、Ag之1種以上元素，並且前述元素濃度占線全體在總計為0.0005質量%以上且0.02質量%以下之範圍內，所以加壓附著球形狀良好。
在實施例10至12、27至29之接合線之情形中，確認由於芯材之前述金屬M為Cu，且含有選自於Pd、Ni之1種以上元素，並且前述元素濃度占線全體在總計為0.2質量%以上且2.0質量%以下之範圍內，所以加熱處理後之信賴性(高溫信賴性)高。
在實施例15至18、32至35之接合線之情形中，確認由於芯材之前述金屬M為Ag，且含有選自於Pd、Ni、Cu之1種以上元素，並且前述元素濃度占線全體在總計為0.5質量%0以上且5.0質量%以下之範圍內，所以加熱處理後之信賴性高。
Figure 107143058-A0305-02-0021-1
Figure 107143058-A0305-02-0022-2

Claims (10)

  1. 一種半導體裝置用接合線，其特徵在於包含：芯材，包含超過50mol%之金屬M；中間層，係形成在前述芯材之表面上，且由Ni、Pd、前述金屬M及不可避免之不純物構成，而前述Ni濃度係大於8mol%且在80mol%以下；及被覆層，係形成在前述中間層上，且由Ni、Pd及不可避免之不純物構成，而前述Pd濃度係50mol%以上且100mol%以下，又，前述金屬M係Cu或Ag，且前述被覆層之Ni濃度係比前述中間層之Ni濃度低。
  2. 如請求項1之半導體裝置用接合線，其中前述中間層之Ni濃度係15mol%以上且80mol%以下。
  3. 如請求項1之半導體裝置用接合線，其中前述中間層之厚度係8至80nm。
  4. 如請求項1之半導體裝置用接合線，其中前述被覆層更包含Au，且具有表面層，該表面層係形成在前述被覆層上，且由包含Au與Pd之合金構成，並且前述Au濃度係10mol%以上且70mol%以下，且Au與Pd之合計濃度係80mol%以上，又，前述被覆層之Au濃度係比前述表面層之Au濃 度低。
  5. 如請求項4之半導體裝置用接合線，其中前述表面層、前述被覆層及前述中間層之總厚度係25至200nm。
  6. 如請求項4之半導體裝置用接合線，其中前述表面層之厚度係3至30nm。
  7. 如請求項1至6中任一項之半導體裝置用接合線，其中前述金屬M係Cu，且前述芯材含有選自於P、Ti、B、Ag之1種以上元素，並且前述元素濃度占線全體總計在0.0005質量%以上且0.02質量%以下之範圍內。
  8. 如請求項1至6中任一項之半導體裝置用接合線，其中前述金屬M係Cu，且前述芯材含有選自於Pd、Ni之1種以上元素，並且前述元素濃度占線全體總計在0.2質量%以上且2.0質量%以下之範圍內。
  9. 如請求項1至6中任一項之半導體裝置用接合線，其中前述金屬M係Ag，且前述芯材含有選自於Pd、Ni、Cu之1種以上元素，並且前述元素濃度占線全體總計在0.5質量%以上且5.0質量%以下之範圍內。
  10. 如請求項1至6中任一項之半導體裝置用接合線，其中前述被覆層更包含與前述芯材相同之前述金屬M。
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