WO2015163297A1 - 半導体装置用ボンディングワイヤ - Google Patents
半導体装置用ボンディングワイヤ Download PDFInfo
- Publication number
- WO2015163297A1 WO2015163297A1 PCT/JP2015/062040 JP2015062040W WO2015163297A1 WO 2015163297 A1 WO2015163297 A1 WO 2015163297A1 JP 2015062040 W JP2015062040 W JP 2015062040W WO 2015163297 A1 WO2015163297 A1 WO 2015163297A1
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- WO
- WIPO (PCT)
- Prior art keywords
- bonding
- wire
- coating layer
- core material
- ball
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 239000011247 coating layer Substances 0.000 claims abstract description 61
- 239000011162 core material Substances 0.000 claims abstract description 51
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 49
- 239000010410 layer Substances 0.000 claims description 41
- 229910052763 palladium Inorganic materials 0.000 claims description 24
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 description 28
- 238000010438 heat treatment Methods 0.000 description 17
- 238000011156 evaluation Methods 0.000 description 16
- 229910052759 nickel Inorganic materials 0.000 description 14
- 238000007747 plating Methods 0.000 description 13
- 230000007547 defect Effects 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000012360 testing method Methods 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 5
- 238000005491 wire drawing Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000010408 sweeping Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910002710 Au-Pd Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H01L2924/01049—Indium [In]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
Definitions
- the present invention relates to a bonding wire for a semiconductor device used for connecting an electrode on a semiconductor element and a wiring of a circuit wiring board such as an external lead.
- a bonding wire bonding method is generally a thermocompression bonding method using ultrasonic waves, and a general-purpose bonding apparatus, a capillary jig used for connection through the bonding wire, or the like is used.
- the tip of the wire is heated and melted by arc heat input, a ball is formed by surface tension, and then this ball is bonded onto the electrode of the semiconductor element heated within the range of 150 to 300 ° C (Hereinafter referred to as “ball bonding”), and after forming a loop, the wire part is bonded to the electrode on the external lead side by pressure bonding (hereinafter referred to as “wedge bonding”).
- the electrode on the semiconductor element which is the bonding partner of the bonding wire, has an electrode structure in which an alloy mainly composed of Al is formed on the Si substrate, and the electrode on the external lead side has an electrode structure with Ag plating or Pd plating. Used.
- in-vehicle devices need to operate under severe high-temperature and high-humidity environments as compared with general electronic devices, they have superior bonding life (hereinafter referred to as “bonding reliability”) at the ball bonding portion.
- bonding reliability superior bonding life
- ball-forming property a ball having excellent sphericity
- in-vehicle devices are required to respond to higher mounting density due to higher functionality and smaller size.
- the mounting density is increased, the wire diameter of the bonding wire is reduced, and the area contributing to the bonding is reduced when performing the wedge bonding, and it becomes difficult to obtain the bonding strength. For this reason, it is necessary to obtain high joint strength at the wedge joint, that is, to improve wedge jointability.
- the distance between the electrodes on the semiconductor element becomes narrow, and there is a concern that the ball may come into contact with an adjacent electrode to cause a short circuit, a technique for deforming the ball into a perfect circle when performing ball bonding is required. .
- the resin-sealed resin it is also required to suppress the straightness of the loop and the variation in height in order to prevent the bonding wires from being deformed by the resin flow and contacting adjacent wires.
- Patent Document 1 As a Cu bonding wire, one using high purity Cu (purity: 99.99 wt.% Or more) has been proposed (for example, Patent Document 1). Cu has a defect that it is easily oxidized compared to Au, and has problems such as poor bonding reliability, ball formation, and wedge bonding.
- Patent Document 2 As a method for preventing the surface oxidation of the Cu bonding wire, a structure in which the surface of the Cu core material is coated with a metal such as Au, Ag, Pt, Pd, Ni, Co, Cr, Ti has been proposed (Patent Document 2). A structure in which the surface of a Cu core material is coated with Pd and the surface is coated with Au, Ag, Cu, or an alloy thereof has been proposed (Patent Document 3).
- JP 61-48543 A Japanese Patent Laying-Open No. 2005-167020 JP 2012-36490 A
- the Cu bonding wires having the conventional Pd coating layer still have practical problems as described later. There was found.
- In-vehicle devices are required to have higher bonding reliability in harsh high-temperature and high-humidity environments than general electronic equipment.
- Several methods have been proposed for evaluating the bonding reliability, and a high temperature and high humidity test is used as one of the typical evaluation methods.
- the high temperature and high humidity test is often evaluated under conditions of a temperature of 130 ° C. and a relative humidity of 85%.
- in-vehicle devices require performance at higher temperatures. Therefore, bonding reliability of 1500 hours or more is required under conditions where the temperature is 150 ° C. and the relative humidity is 85%.
- an object of the present invention is to provide a bonding wire suitable for an in-vehicle device by improving the bonding reliability and ball forming property of the ball bonding portion.
- the bonding wire according to the present invention is a bonding wire for a semiconductor device having a Cu alloy core material and a Pd coating layer formed on the surface of the Cu alloy core material, wherein the Cu alloy core material contains Ni, and the entire wire
- the Ni concentration is 0.1 to 1.2 wt.%
- the thickness of the Pd coating layer is 0.015 to 0.150 ⁇ m.
- the Cu alloy core material containing Ni, Pd or Ni is concentrated at the bonding interface with the electrode at the ball bonding portion, and at the bonding interface during the high temperature and high humidity test. Since the diffusion of Cu and Al is suppressed and the growth rate of the easily corrosive compound is lowered, the bonding reliability can be improved. In addition, since the Ni concentration relative to the entire wire is 0.1 wt.% Or more, the occurrence of unevenness on the surface of the ball can be reduced, so that the ball formability can be improved.
- a bonding wire according to an embodiment of the present invention includes a Cu alloy core material and a Pd coating layer formed on the surface of the Cu alloy core material, the Cu alloy core material including Ni, and Ni for the entire wire.
- the concentration of is 0.1 to 1.2 wt.%, And the thickness of the Pd coating layer is 0.015 to 0.150 ⁇ m.
- the bonding wire can improve the bonding reliability and ball formation required for the in-vehicle device.
- the definition of the Cu alloy core material and Pd coating layer of the bonding wire will be described.
- the boundary between the Cu alloy core material and the Pd coating layer was determined based on the Pd concentration.
- a region where the Pd concentration was 50 at.% was defined as a boundary, a region where the Pd concentration was 50 at.% Or more was determined as a Pd coating layer, and a region where the Pd concentration was less than 50 at.% Was determined as a Cu alloy core material.
- the reason for this is that if the Pd concentration in the Pd coating layer is 50 at.% Or more, an effect of improving the characteristics can be obtained from the structure of the Pd coating layer.
- the Pd coating layer may include a Pd single layer region, and a region where Pd and Cu have a concentration gradient in the depth direction of the wire.
- the reason why the region having the concentration gradient is formed in the Pd coating layer is that atoms of Pd and Cu may be diffused by heat treatment or the like in the manufacturing process.
- the Pd coating layer may contain inevitable impurities.
- Ni contained in the Cu alloy core material may diffuse into the Pd coating layer by heat treatment or the like and be present in the Pd coating layer.
- the alloy layer with high Pd and Ni concentration formed on the surface of the ball is excellent in oxidation resistance, so that it is possible to reduce defects such as deviation of the ball formation position from the center of the bonding wire during ball formation. Can do.
- the Cu alloy of the core material contains Ni and the Ni concentration relative to the whole wire is 0.1 wt.% Or more, the occurrence of irregularities on the surface of the ball can be reduced.
- the reason for this is that by adding Ni to the Cu alloy of the core material, the heat conductivity of the Cu core material alloy is lowered and brought closer to the heat conductivity of the Pd coating layer, so that solidification is completed from the molten state of the ball surface and inside This is considered to be because the time difference required until the time can be reduced.
- the Ni concentration with respect to the entire wire is greater than 1.2 wt.%, The ball becomes hard and damage to the Si chip becomes a problem during ball bonding, which is not suitable for practical use.
- the thickness of the Pd coating layer is greater than 0.150 ⁇ m, bubbles are generated on the surface during ball formation, and good ball formability cannot be obtained.
- Cu may exist on the outermost surface of the Pd coating layer.
- the bonding wire may be formed by further forming a 0.005 to 0.050 ⁇ m Au skin layer on the surface of the Pd coating layer. As a result, the bonding wire can further improve the bonding reliability and improve the wedge bonding property.
- the definition of the Au skin layer of the bonding wire will be explained.
- the boundary between the Au skin layer and the Pd coating layer was determined based on the Au concentration.
- the region where the Au concentration was 10 at.% was determined as the boundary, the region where the Au concentration was 10 at.% Or more was determined as the Au skin layer, and the region below 10 at.% Was determined as the Pd coating layer. Further, even if the Pd concentration was 50 at.% Or more, if Au was present at 10 at.% Or more, it was determined as an Au skin layer. The reason for this is that if the Au concentration is within the above-described concentration range, the effect of improving the characteristics can be expected from the structure of the Au skin layer.
- the Au skin layer is an Au—Pd alloy, and includes a region in which Au and Pd have a concentration gradient in the depth direction of the wire.
- the reason why the region having the concentration gradient is formed in the Au skin layer is that atoms of Au and Pd are diffused by heat treatment or the like in the manufacturing process. Furthermore, the Au skin layer may contain inevitable impurities.
- Au forms a concentrated layer with a ternary alloy composed of Au, Ni, and Pd together with Ni and Pd at the joint interface of the ball joint, and significantly reduces the growth rate of easily corrosive compounds. Can do.
- the bonding wire can further improve the bonding reliability.
- the Au skin layer reacts with Ni contained in the Pd coating layer or Cu alloy core material to increase the adhesion strength between the Au skin layer, Pd coating layer and Cu alloy core material, and the Pd coating layer during wedge bonding And peeling of the Au skin layer can be suppressed. Thereby, the bonding wire can improve wedge bondability.
- the Au skin layer can be formed by the same method as the Pd coating layer. Incidentally, Cu may exist on the outermost surface of the Au skin layer.
- the Cu alloy core material further contains at least one element selected from B, In, Ca, P, and Ti, and the concentration of the element with respect to the entire wire is 3 to 100 wt.ppm,
- the collapsed shape of the ball joint required for high-density mounting can be improved, that is, the roundness of the shape of the ball joint can be improved. This is because the crystal grain size of the ball can be reduced and the deformation of the ball can be suppressed by adding the element. If the concentration of the element with respect to the whole wire is less than 3 wt.ppm, the above effect cannot be obtained, and if it exceeds 100 wt.ppm, the ball becomes hard and chip damage at the time of ball bonding becomes a problem, which is not suitable for practical use.
- the Cu alloy core material further contains Pt or Pd, and the concentration of Pt or Pd contained in the Cu alloy core material is 0.05 to 1.20 wt. It is possible to improve the straightness of the loop required for mounting and reduce the variation in the height of the loop. This is because the yield strength of the bonding wire is improved and the deformation of the bonding wire can be suppressed when the Cu alloy core material contains Pd or Pt. In order to improve the straightness of the loop and reduce variations in height, the higher the strength of the Cu alloy core material, the more effective, and the improvement of the coating structure such as increasing the thickness of the Pd coating layer is sufficient. Cannot be obtained.
- the concentration of Pt or Pd contained in the Cu alloy core is less than 0.05 wt.%, The above effect cannot be obtained, and 1.20 wt. If it is larger than%, the bonding wire becomes hard, the deformation of the wire bonding portion becomes insufficient, and deterioration of the wedge bondability becomes a problem.
- Concentration analysis of the wire surface to determine the Pd coating layer and Au skin layer is performed by analyzing the surface of the bonding wire from the surface of the bonding wire by sputtering, or by analyzing the wire cross-section by exposing the wire cross section.
- a method of performing point analysis or the like is effective.
- As a method for exposing the cross section of the wire mechanical polishing, ion etching, or the like can be used.
- As an analysis apparatus used for concentration analysis an Auger electron spectroscopic analysis apparatus, an energy dispersive X-ray analysis apparatus, an electron beam microanalyzer, or the like provided in a scanning electron microscope or a transmission electron microscope can be used.
- an analysis method using a scanning electron microscope equipped with a sputtering device and an Auger electron spectroscopy analyzer simultaneously has a concentration profile in the depth direction for a plurality of elements in a relatively short time. Since it can acquire, it is preferable.
- An ICP emission spectroscopic analyzer can be used to analyze the concentration of elements contained in the entire bonding wire.
- the bonding wire is obtained by manufacturing a Cu alloy used as a core material, then processing it into a thin wire shape, forming a Pd coating layer and an Au skin layer, and then performing a heat treatment. In some cases, after forming the Pd coating layer and the Au skin layer, wire drawing and heat treatment are performed again.
- a method for producing a Cu alloy core material, a method for forming a Pd coating layer, an Au skin layer, and a heat treatment method will be described in detail.
- the Cu alloy used for the core material is obtained by melting and solidifying Cu as a raw material and the element to be added together.
- an arc heating furnace, a high-frequency heating furnace, a resistance heating furnace, or the like can be used.
- the method for forming the Pd coating layer and the Au skin layer on the surface of the Cu alloy core includes a plating method, a vapor deposition method, a melting method, and the like.
- a plating method either an electrolytic plating method or an electroless plating method can be applied.
- electroplating called strike plating or flash plating, the plating rate is high and the adhesion to the substrate is good.
- the solutions used for electroless plating are classified into substitutional type and reduction type. If the thickness is thin, substitutional plating alone is sufficient, but if the thickness is thick, reduction type plating is used after substitutional plating. It is effective to apply stepwise.
- vapor deposition method physical adsorption such as sputtering, ion plating, and vacuum deposition, and chemical adsorption such as plasma CVD can be used. All of them are dry-type, and there is no need for cleaning after forming the Pd coating layer and Au skin layer, and there is no concern about surface contamination during cleaning.
- each forming method include a method of forming a Pd coating layer and an Au skin layer on a Cu alloy core material having a final wire diameter while continuously sweeping a wire in an electrolytic plating solution, or electrolysis or non-coating.
- a method may be used in which a thick Cu alloy core material is immersed in an electrolytic plating bath to form a Pd coating layer and an Au skin layer, and then the wire is drawn to reach the final wire diameter.
- heat treatment may be performed.
- heat treatment atoms diffuse between the Au skin layer, Pd coating layer, and Cu alloy core material to improve adhesion strength, so that peeling of the Au skin layer and Pd coating layer during processing can be suppressed, and productivity This is effective in improving.
- the present invention is not limited to the above-described embodiment, and can be appropriately changed within the scope of the gist of the present invention.
- sample First, a method for manufacturing a sample is described.
- Cu and Ni used as raw materials for the core material were those having a purity of 99.99 wt.% Or more and the balance composed of inevitable impurities.
- B, In, Ca, P, Ti, Pt, and Pd were used in which the purity was 99 wt.% Or more and the balance was composed of inevitable impurities.
- the core Cu alloy is loaded with raw materials in a carbon crucible processed into a cylindrical shape with a diameter of 3 to 6 mm, and is used in a vacuum or in an inert atmosphere such as N 2 or Ar gas at 1090 to 1300 ° C using a high frequency furnace. It was manufactured by performing furnace cooling after heating to dissolution. The obtained ⁇ 3mm alloy was drawn to ⁇ 0.9-1.2mm, and then continuously drawn using a die to produce a ⁇ 300-600 ⁇ m wire. . A commercially available lubricant was used for wire drawing, and the wire drawing speed was 20 to 150 m / min.
- Tables 1-1, 1-2, 1-3, and 2 show the structure of each sample manufactured by the above procedure.
- the thicknesses of the Pd coating layer and Au skin layer listed in the table are the concentration profiles in the depth direction of Pd, Au, and Cu obtained by performing Auger electron spectroscopy analysis while scraping the wire surface by Ar ion sputtering. The calculated value is shown.
- the bonding reliability was judged by the bonding life of the ball bonding portion when a sample for bonding reliability evaluation was prepared and exposed to a high temperature and high humidity environment.
- a sample for bonding reliability evaluation is a ball bonding using a commercially available wire bonder to an electrode formed by forming an Al-0.5% Cu alloy with a thickness of 1.0 ⁇ m on a Si substrate on a general metal frame. And sealed with a commercially available epoxy resin. The balls were formed while flowing N 2 + 5% H 2 gas at a flow rate of 0.4 to 0.6 L / min, and the size was in the range of ⁇ 34 to 36 ⁇ m.
- the produced sample for evaluation of bonding reliability was exposed to a high temperature and high humidity environment with a temperature of 150 ° C. and a relative humidity of 85% using an unsaturated pressure cooker tester.
- the joint life of the ball joint was measured every 100 hours, and the shear test of the ball joint was carried out, and the shear strength value was set to 1/2 of the shear strength obtained in the initial stage.
- the shear test after the high-temperature and high-humidity test was conducted after removing the resin by acid treatment and exposing the ball joint.
- the share tester used was a DAGE tester.
- As the value of the shear strength an average value of 10 measured values of randomly selected ball joints was used. In the above evaluation, if the bonding life is less than 1500 hours, it is judged that there is a practical problem, and if it is ⁇ , 1500 to 2000 hours, it is judged that there is no practical problem. It was marked as “ ⁇ ” and indicated in the column of “High temperature and high humidity test” in Table 3-1, Table 3-2 and Table 4.
- Ball formation was evaluated by collecting and observing the balls before bonding, and determining the presence or absence of bubbles on the surface of the balls and the presence or absence of deformation of the balls that were originally true spheres. If any of the above occurred, it was judged as defective. Ball formation was performed while blowing N 2 + 5% H 2 gas at a flow rate of 0.4 to 0.6 L / min to suppress oxidation in the melting process. The size of the balls was 26 ⁇ m, 32 ⁇ m, and 38 ⁇ m. 30 balls were observed for one condition. SEM was used for observation. In the evaluation of ball formability, if 3 or more defects are found, it is judged that there is a problem. If there are 1 or 2 defects, it is judged that there is no problem. ⁇ mark, if no defect occurs. In Table 3-1, Table 3-2, and Table 4, they are listed in the “Ball Formability” column.
- the evaluation of the collapsed shape of the ball joint was made by observing the bonded ball joint from directly above and determining its roundness.
- As the bonding partner an electrode in which a 1.0 ⁇ m thick Al-0.5% Cu alloy film was formed on a Si substrate was used. The observation was performed using an optical microscope at 200 locations for one condition. It was judged that the collapsed shape of the ball joint portion was poor for an oval shape having a large deviation from a perfect circle and an anisotropy in deformation.
- the evaluation of loop formability was judged by straightness and height variation.
- the loop formation conditions were a loop length of 2 mm and a maximum height of 80 ⁇ m.
- the maximum height of the loop was the distance from the surface of the ball joint electrode to the highest point of the wire.
- the straightness is evaluated by observing 50 bonding wires with a scanning electron microscope for one condition, and the maximum deviation between the bonding wire and the axis connecting the ball joint and the wire joint is straight line is less than 45 ⁇ m. Was judged as good, and when it was 45 ⁇ m or more, it was judged as bad.
- the height variation is evaluated by observing 50 bonding wires for one condition with a scanning electron microscope and calculating the average height.
- the bonding wires according to Examples 1 to 94 each have a Cu alloy core material and a Pd coating layer formed on the surface of the Cu alloy core material, and the Cu alloy core material contains Ni, and Ni for the entire wire
- the concentration of is 0.1 to 1.2 wt.%
- the thickness of the Pd coating layer is 0.015 to 0.150 ⁇ m.
- the bonding wires according to Examples 1 to 94 can obtain good bonding reliability and excellent ball forming properties.
- the Ni concentration is outside the above range
- Comparative Example 5 the thickness of the Pd coating layer is outside the above range. I can't.
- Examples 10 to 21, 28 to 39, 42, 43, 46, 47, 50, 51, 56 to 65, 68 to 72, 75, 76, 85, 86, 89, 90, 93, 94 are Pd coating layers It was confirmed that by having an Au skin layer on the top, excellent bonding reliability was obtained.
- the Au skin layer has a thickness of 0.0005 to 0.050 ⁇ m. It was confirmed that even better wedge bondability was obtained.
- Examples 22 to 51, 64, 65, 70, 71, 74, 76, 78, 80, 82, 92, 94 are at least one selected from the group consisting of B, In, Ca, P and Ti as the Cu alloy core material. It was confirmed that a collapsed shape of the ball joint having excellent roundness can be obtained when the concentration of the element is 3 wt.
- the Cu alloy core material further contains Pt or Pd, and the concentration of Pt or Pd contained in the Cu alloy core material is 0.05 to 1.20 wt. It was confirmed that Incidentally, in Examples 83, 85, 87, and 89, since the concentration of Pt or Pd was less than the lower limit of the above range, excellent loop forming properties were not obtained. In Examples 84, 86, 88, and 90, the Pt or Pd concentration exceeded the upper limit of the above range. Thus, although excellent loop formation was obtained, wedge bondability was deteriorated.
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Abstract
Description
(全体構成)
本発明の実施形態に係るボンディングワイヤは、Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層とを有し、前記Cu合金芯材はNiを含み、ワイヤ全体に対するNiの濃度が0.1~1.2wt.%であり、Pd被覆層の厚さが0.015~0.150μmである。これによりボンディングワイヤは、車載用デバイスで要求される接合信頼性とボール形成性を改善することができる。
次に本発明の実施形態に係るボンディングワイヤの製造方法を説明する。ボンディングワイヤは、芯材に用いるCu合金を製造した後、ワイヤ状に細く加工し、Pd被覆層、Au表皮層を形成して、熱処理することで得られる。Pd被覆層、Au表皮層を形成後、再度伸線と熱処理を行う場合もある。Cu合金芯材の製造方法、Pd被覆層、Au表皮層の形成方法、熱処理方法について詳しく説明する。
本発明は上記実施形態に限定されるものではなく、本発明の趣旨の範囲内で適宜変更することが可能である。
以下では、実施例を示しながら、本発明の実施形態に係るボンディングワイヤについて、具体的に説明する。
まずサンプルの作製方法について説明する。芯材の原材料となるCu、Niは純度が99.99wt.%以上で残部が不可避不純物から構成されるものを用いた。B,In,Ca,P,Ti,Pt,Pdは純度が99wt.%以上で残部が不可避不純物から構成されるものを用いた。
接合信頼性は、接合信頼性評価用のサンプルを作製し、高温高湿環境に暴露したときのボール接合部の接合寿命によって判定した。
実施例1~94に係るボンディングワイヤは、Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層とを有し、前記Cu合金芯材はNiを含み、ワイヤ全体に対するNiの濃度が0.1~1.2wt.%であり、Pd被覆層の厚さが0.015~0.150μmである。これにより実施例1~94に係るボンディングワイヤは、良好な接合信頼性、及び優れたボール形成性が得られることを確認した。一方、比較例1~4はNi濃度が上記範囲外であること、比較例5はPd被覆層の厚さが上記範囲外であることから、接合信頼性やボール形成性において十分な効果が得られない。
Claims (5)
- Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層とを有する半導体装置用ボンディングワイヤにおいて、
前記Cu合金芯材がNiを含み、ワイヤ全体に対するNiの濃度が0.1~1.2wt.%であり、
前記Pd被覆層の厚さが0.015~0.150μmである
ことを特徴とする半導体装置用ボンディングワイヤ。 - 前記Pd被覆層上にさらにAu表皮層を有することを特徴とする請求項1記載の半導体装置用ボンディングワイヤ。
- 前記Au表皮層の厚さが0.0005~0.050μmであることを特徴とする請求項2記載の半導体装置用ボンディングワイヤ。
- 前記Cu合金芯材がさらにB,In,Ca,P,Tiから選ばれる少なくとも1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が3~100wt.ppmであることを特徴とする請求項1~3のいずれか1項記載の半導体装置用ボンディングワイヤ。
- 前記Cu合金芯材がさらにPtまたはPdを含み、前記Cu合金芯材に含まれるPt又はPdの濃度が0.05~1.20wt.%であることを特徴とする請求項1~4のいずれか1項記載の半導体装置用ボンディングワイヤ。
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KR1020187026794A KR20180105740A (ko) | 2014-04-21 | 2015-04-21 | 반도체 장치용 본딩 와이어 |
JP2016514933A JP6167227B2 (ja) | 2014-04-21 | 2015-04-21 | 半導体装置用ボンディングワイヤ |
KR1020167029247A KR101902091B1 (ko) | 2014-04-21 | 2015-04-21 | 반도체 장치용 본딩 와이어 |
CN201580020829.0A CN106233447A (zh) | 2014-04-21 | 2015-04-21 | 半导体装置用接合线 |
US15/305,238 US10950570B2 (en) | 2014-04-21 | 2015-04-21 | Bonding wire for semiconductor device |
EP15782477.2A EP3136427B1 (en) | 2014-04-21 | 2015-04-21 | Bonding wire for semiconductor device |
SG11201608819VA SG11201608819VA (en) | 2014-04-21 | 2015-04-21 | Bonding wire for semiconductor device |
PH12016502098A PH12016502098A1 (en) | 2014-04-21 | 2016-10-20 | Bonding wire for semiconductor device |
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JP2014-087587 | 2014-04-21 | ||
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EP (1) | EP3136427B1 (ja) |
JP (3) | JP6167227B2 (ja) |
KR (2) | KR101902091B1 (ja) |
CN (2) | CN106233447A (ja) |
MY (1) | MY168617A (ja) |
PH (1) | PH12016502098A1 (ja) |
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Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2017104153A1 (ja) * | 2015-12-15 | 2017-06-22 | 新日鉄住金マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
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2015
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Also Published As
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PH12016502098B1 (en) | 2017-01-09 |
SG11201608819VA (en) | 2016-12-29 |
JP6167227B2 (ja) | 2017-07-19 |
KR20180105740A (ko) | 2018-09-28 |
US20170040281A1 (en) | 2017-02-09 |
KR20160144390A (ko) | 2016-12-16 |
JPWO2015163297A1 (ja) | 2017-04-20 |
JP2020031238A (ja) | 2020-02-27 |
MY168617A (en) | 2018-11-14 |
KR101902091B1 (ko) | 2018-09-27 |
US10950570B2 (en) | 2021-03-16 |
CN111383935A (zh) | 2020-07-07 |
TW201603220A (zh) | 2016-01-16 |
EP3136427B1 (en) | 2023-12-06 |
CN106233447A (zh) | 2016-12-14 |
EP3136427A4 (en) | 2018-03-14 |
TWI605559B (zh) | 2017-11-11 |
EP3136427A1 (en) | 2017-03-01 |
PH12016502098A1 (en) | 2017-01-09 |
JP2017163169A (ja) | 2017-09-14 |
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