JPS6148543A - 半導体素子結線用銅合金線 - Google Patents

半導体素子結線用銅合金線

Info

Publication number
JPS6148543A
JPS6148543A JP59168684A JP16868484A JPS6148543A JP S6148543 A JPS6148543 A JP S6148543A JP 59168684 A JP59168684 A JP 59168684A JP 16868484 A JP16868484 A JP 16868484A JP S6148543 A JPS6148543 A JP S6148543A
Authority
JP
Japan
Prior art keywords
copper alloy
alloy wire
wire
copper
ball
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59168684A
Other languages
English (en)
Other versions
JPS6238414B2 (ja
Inventor
Kazuo Sawada
沢田　和夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP59168684A priority Critical patent/JPS6148543A/ja
Publication of JPS6148543A publication Critical patent/JPS6148543A/ja
Publication of JPS6238414B2 publication Critical patent/JPS6238414B2/ja
Granted legal-status Critical Current

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Classifications

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 発明の分野 こめ発明は、ＩＣ，ＬＳＩおよびトランジスタなどの半
導体素子の組立に際し、半導体チップをステムに装着し
た後、半導体チップ上の電極と外部リードフレームとを
接続するのに用いる半導体素子結線用金属線に関する。
発明の背景 半導体チップと外部リードフレームとの接続に際しては
、従来、金を主成分とする貴金属細線が使用されていた
。
しかしながら、金線は極めて高価格になるという欠点が
あった。また、一部では高価な金線の使用を避けて、す
なわち脱貴金属化を指向して、アルミニウム合金線が使
用されている。しかしながら、アルミニウム合金線では
、以下に詳細に述べるように様々な欠点があった。第１
に、細線への加工性が金に比べてかなり劣るという問題
があった。
第２に、接続に際し先端にボールを作成し接続する場合
、このボールの形状が不安定であるという欠点があった
。これは、アルミニウムの表面に酸化被膜が生じやすく
、これが強固なため不安定性をもたらしているものであ
る。第３に、強度が小さく、ボンディング強度あるいは
ループ線の形成状態が良好でないという欠点があった。
第４に、半導体チップ上の電極への圧着に用いるキャピ
ラリと反応しやすく、キャピラリ先端がしばしば閉塞す
るという欠点もあった。
半導体素子では、ｐｐｍオーダの信頼性が要求されてい
るが、アルミニウム合金線を結線用に用いた場合、上述
のような種々の欠点を有するため、ｐｐｍオーダの信頼
性を有する半導体素子は到底得られなかった。
本願発明者は、上述の金線およびアルミニウム　・合金
線の双方の欠点を効果的に解消することを目的として、
すなわち安価でかつ信頼性に優れた半導体素子結線用銅
合金線を得ることを目的として、安価な銅を用いて種々
の実験を繰返した。より具体的に言えば、本願発明者は
、タフピッチ銅線、無酸素銅線、あるいはこれらを基と
した銅合金線を用いて実験を繰返した。しかしながら、
これらの銅線、銅合金線では、珪素半導体素子上のアル
ミニウム電極への接続に際し、ウェッジボンディングも
しくはネイルヘッドボンディングなどの熱圧着法、超音
波ボンディング法またはこれらを併用する方法のいずれ
においても、十分安定であり、かつ、信頼性に優れた接
続を得ることは困難であることがわかった。銅線、銅合
金線がアルミニウムに比べて比較的硬いため、圧着のた
めに要する圧力が、しばしば半導体素子に損傷を与えて
しまうからであった。したがって、従来、半導体素子結
線用金属線として銅線、銅合金線が実用に供されている
例は未だなかった。
発明の概要 それゆえに、この発明の目的は、脱貴金属化を果たし、
安価であり、かつ信頼性に優れた接続をなし得る、半導
体結線用金属線を提供することにある。
本願発明者は、上述の問題点を鋭意検討し、実験を繰返
したところ、純度９９．９９重量％以上の銅を素材料と
して、政調に、Ｇａ、　Ｇｅ、　Ｉｎ、　Ａｕ、　Ｎｉ
。
Ｌｉ、Ｓｂ　およびＢｉ　　からなる群から選択された
１種以上の元素を０．００１〜０．１重量％含有させて
細線を構成すれば、上述の目的を果たし得る半導体素子
結線用金属線を得ることができることを見い出した。
ｒｉ、９９重量％以上」としたのは、ボンディングワイ
ヤの変形挙動を、金線の場合に近づけ、圧着時に珪素半
導体素子を損傷することなく十分安定であり、かつ、信
頼性に優れた接続を得るためである。ｒ９９．９９重量
％」未満では、珪素半導体素子を損傷しやすいことがわ
かっている。この発明では、このような高純度の銅を素
材料として、さらにｒ　Ｇａ、　Ｇｅ、　Ｉｎ、　Ａｕ
、　Ｎｉ、　Ｌｉ、　Ｓｂ　　およびＢｉからなる群か
ら選択された１種以上の元素」を「０．００１〜０．１
重量％」含有させた材料を用いる。
これらの元素を加える理由は、上記変形能を維持したま
まで、第１のボールボンディング部がボール形成時の加
熱により軟化しすぎてボンディング強度の劣化を招いた
り、および第２にループ線が寝すぎた好ましくない状態
となることを防止するためである。なお、上記各元素は
、ボール形成能に改善効果を与えるものであるが、決し
て変形能（すなわち、シリコンチップを損傷することな
く圧着し得る軟らかさ）を損なうものではない。
この発明の実施にあたっては、第１図に略図的正面図で
示すように、キャピラリ１から先端が露出した銅合金線
２を加熱し、ボール３を形成し、次に第２図に略図的正
面図で示すように、珪素半導体チップ４上のアルミニウ
ムからなる電極５上に、たとえば超音波ボンディングに
より圧着することにより接続し得る。
なお、第２図において６はダイボンディング部、７はス
テム、８は外部リードフレームを示す。
なお、第２図において想像線で示す９は、外部リードフ
レーム８との接続を行なった後のループ線の形状の好ま
しくない状態、すなわちループ線が寝すぎた状態を示す
ものであり、従来のアルミニウム合金線を使用した場合
、しばしばこのような状態が発生していた。
この発明では、上記したように銅以外に微量元素を加え
るものであるため、第１図におけるボール３に近接した
銅合金線部分２ａにおける強度が高められる。したがっ
て、外部リードフレーム８と接続した後においても、ル
ープ線は想像線で示した９のように寝すぎることはなく
、好ましい状態を保ち得る。
なお、従来の金線からなる半導体素子結線用金属線の接
続は通常大気下で行なわれていたが、この発明の銅合金
線の場合には、たとえばアルゴン、ヘリウム、窒素、ネ
オンなどの還元性ガス雰囲気下で行なわれる。銅線の表
面に酸化被膜が生じることを防止するためである。
発明の効果 この発明は、上述したようシζ、９９．９９重量％以上
の銅を素材料として、政調に、Ｇａ、　Ｇｅ、　Ｉｎ、
　Ａｕ。
Ｎｉ、　Ｌｉ、　ＳｂおよびＢ１からなる群から選択さ
れた１種以上の元素を０．００１〜０．１重量％含有さ
せてなる材料を用いるものであるため、肌質金属化を果
たし、安価な半導体素子結線用金属線とすることができ
る。また、このような高純度の銅を用いるものであるた
め、その酸化被膜特性や表面張力等の性質に基づき、還
元雰囲気下で安定なボールを形成することができ、また
アルミニウム線の場合に比べて比較的小さなボールを形
成することもできるので、より小さな電極に接続するこ
とが可能となる。さらに、アルミニウムに比べて比較的
高強度であるため、ループ線の状態をより好ましいもの
とすることもできる。
ｊ　　　　　　さらに、上述のように高純度の銅を主成
分とす゛るものであるため、変形能が高＜、シたがって
珪素半導体素子を損傷するおそれもない。（また極細線
への加工性にも優れるものである。また、銅を主成分と
するものであるため、アルミニウムあるいは銀などの電
極材料との接合性に優れ、したがってアルミニウム電極
や銀めっき外部リードフレームやめつきなしの銅合金外
部リードフレームとの接続強度を高めることも可能とな
る。）さらに、外部リードフレームに銅もしくは銅合金
を用いた場合には、外部リードフレームをめっきせずど
も接続することができ、より一層肌質金属化を果たすこ
とが可能となるなど、産業上多大の利益をもたらすもの
であることがわかる。
この発明は、ＩＣ，ＬＳＩ、）ランジスクなどの様々な
素子のボンディングワイヤに用いることができ、特に生
産性に優れたボールボンディングの場合に最適なもので
あることを指摘しておく。
実施例の説明 この発明の実施例として、純度９９．９９８　　重量％
の再電解銅および９９．９９９　　重量％以上のゾーン
メルティング法により得られた高純度の銅を素材料とし
、第１表に示すように、９９．７重量％以上の純度の各
種元素を混入し銅合金とし、細線に加工することに上り
作成した。これを第１表に示すように、それぞれ、本発
明例１〜１０とした。また、従来例として、従来から公
知のアルミニウム細線を準備し、従来例１とし、また高
純度のアルミニウムに９９．７重量％以上の純度のＳｉ
を１．０重量％混入させた合金線を従来例２とした。さ
らに、比較例１〜３として、純度９９．９５重量％の銅
を素材料とし、Ｇａ、　Ｉｎ、　Ｓｂ　　を、それぞれ
０．０８　、０．０５　、０．０２重量％添加した銅合
金線を準備した。また、純度９９．９９９　　重量％の
銅を素材料とし、０．５重量％のＮｉおよび２，０重量
％のＡｕ　を添加して作成した銅合金線を、比較例４お
よび５として準備した。
上記した本発明例１〜１０、従来例１．２ならびに比較
例１〜５を用いて、それぞれ、アルゴンガス雰囲気下に
おいて、キャピラリの先端に電気アークによりボールを
形成し、珪素半導体素子上のアルミニウム電極と、各種
のメッキを施した燐青銅外部リードフレームとの接続を
行なった。この接続結果の評価を、第２表に示す。
第２表から明らかなように、本発明例１〜１０では、ボ
ール形成能、ループ線の状態、素子の損傷、伸線加工性
、接続強度、外部リードフレームとの接続性のいずれに
おいても、良好な性能を示すことがわかる。
第１表
【図面の簡単な説明】
第１図は、この発明を実施する際のポール形成状態を示
す略図的正面図である。第２図は、この発明の半導体素
子結線用の銅合金線の接続された状態の一例を示す略図
的正面図である。 ２は、半導体素子結線用銅合金線を示す。 代理人弁理士　　上　代　哲　司喀 や１図 升２図

Claims (1)

    【特許請求の範囲】
  1. （１）純度９９．９９重量％以上のＣｕを素材料として
    、該Ｃｕに、Ｇａ、Ｇｅ、Ｉｎ、Ａｕ、Ｎｉ、Ｌｉ、Ｓ
    ｂおよびＢｉからなる群から選択された１種以上の元素
    を０．００１〜０．１重量％含有させてなる、半導体素
    子結線用銅合金線。
JP59168684A 1984-08-10 1984-08-10 半導体素子結線用銅合金線 Granted JPS6148543A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59168684A JPS6148543A (ja) 1984-08-10 1984-08-10 半導体素子結線用銅合金線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59168684A JPS6148543A (ja) 1984-08-10 1984-08-10 半導体素子結線用銅合金線

Publications (2)

Publication Number Publication Date
JPS6148543A true JPS6148543A (ja) 1986-03-10
JPS6238414B2 JPS6238414B2 (ja) 1987-08-18

Family

ID=15872552

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59168684A Granted JPS6148543A (ja) 1984-08-10 1984-08-10 半導体素子結線用銅合金線

Country Status (1)

Country Link
JP (1) JPS6148543A (ja)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199645A (ja) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS61113740A (ja) * 1984-11-09 1986-05-31 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS61258463A (ja) * 1985-05-13 1986-11-15 Mitsubishi Metal Corp 半導体装置用Ｃｕ合金製ボンディングワイヤ
JPS6293326A (ja) * 1985-10-18 1987-04-28 Sumitomo Electric Ind Ltd ボンデイングワイヤ
JPS6320844A (ja) * 1986-07-15 1988-01-28 Toshiba Corp 半導体装置
KR100926932B1 (ko) 2002-03-14 2009-11-17 페어차일드코리아반도체 주식회사 산화가 방지되는 구리 와이어를 갖는 반도체 패키지 및 그제조 방법
CN103151091A (zh) * 2011-12-01 2013-06-12 贺利氏材料科技公司 用于微电子装置中接合的掺杂4n铜线
WO2016135993A1 (ja) 2015-02-26 2016-09-01 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
JP6002337B1 (ja) * 2015-08-12 2016-10-05 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
KR101670209B1 (ko) 2015-06-15 2016-10-27 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 반도체 장치용 본딩 와이어
WO2016189758A1 (ja) 2015-05-26 2016-12-01 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
KR20160144390A (ko) 2014-04-21 2016-12-16 신닛테츠스미킹 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
WO2016203659A1 (ja) 2015-06-15 2016-12-22 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
KR20160150634A (ko) 2015-05-26 2016-12-30 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 반도체 장치용 본딩 와이어
CN108369914A (zh) * 2015-12-15 2018-08-03 新日铁住金高新材料株式会社 半导体装置用接合线
KR20190019948A (ko) 2016-06-20 2019-02-27 닛데쓰마이크로메탈가부시키가이샤 반도체 장치용 구리 합금 본딩 와이어
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US10468370B2 (en) 2015-07-23 2019-11-05 Nippon Micrometal Corporation Bonding wire for semiconductor device
EP3667709A4 (en) * 2017-08-09 2021-06-09 NIPPON STEEL Chemical & Material Co., Ltd. CU ALLOY BOND WIRE FOR SEMICONDUCTOR COMPONENTS
WO2021111908A1 (ja) 2019-12-02 2021-06-10 日鉄マイクロメタル株式会社 半導体装置用銅ボンディングワイヤ及び半導体装置
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WO2022270051A1 (ja) 2021-06-25 2022-12-29 日鉄マイクロメタル株式会社 半導体装置用ボンディングワイヤ
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KR20240026928A (ko) 2021-06-25 2024-02-29 닛데쓰마이크로메탈가부시키가이샤 반도체 장치용 본딩 와이어
KR20240027868A (ko) 2022-06-24 2024-03-04 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 반도체 장치용 본딩 와이어

Cited By (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6199645A (ja) * 1984-10-20 1986-05-17 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS61113740A (ja) * 1984-11-09 1986-05-31 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPS61258463A (ja) * 1985-05-13 1986-11-15 Mitsubishi Metal Corp 半導体装置用Ｃｕ合金製ボンディングワイヤ
JPH0412622B2 (ja) * 1985-05-13 1992-03-05 Mitsubishi Materials Corp
JPS6293326A (ja) * 1985-10-18 1987-04-28 Sumitomo Electric Ind Ltd ボンデイングワイヤ
JPS6320844A (ja) * 1986-07-15 1988-01-28 Toshiba Corp 半導体装置
KR100926932B1 (ko) 2002-03-14 2009-11-17 페어차일드코리아반도체 주식회사 산화가 방지되는 구리 와이어를 갖는 반도체 패키지 및 그제조 방법
CN103151091A (zh) * 2011-12-01 2013-06-12 贺利氏材料科技公司 用于微电子装置中接合的掺杂4n铜线
JP2017163169A (ja) * 2014-04-21 2017-09-14 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
KR20160144390A (ko) 2014-04-21 2016-12-16 신닛테츠스미킹 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
US10950570B2 (en) 2014-04-21 2021-03-16 Nippon Steel Chemical & Material Co., Ltd. Bonding wire for semiconductor device
WO2016135993A1 (ja) 2015-02-26 2016-09-01 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
EP3086362A1 (en) * 2015-02-26 2016-10-26 Nippon Micrometal Corporation Bonding wire for semiconductor devices
KR20160114042A (ko) 2015-02-26 2016-10-04 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 반도체 장치용 본딩 와이어
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