JP2017163169A - 半導体装置用ボンディングワイヤ - Google Patents
半導体装置用ボンディングワイヤ Download PDFInfo
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- JP2017163169A JP2017163169A JP2017123904A JP2017123904A JP2017163169A JP 2017163169 A JP2017163169 A JP 2017163169A JP 2017123904 A JP2017123904 A JP 2017123904A JP 2017123904 A JP2017123904 A JP 2017123904A JP 2017163169 A JP2017163169 A JP 2017163169A
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- bonding
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 239000011247 coating layer Substances 0.000 claims abstract description 60
- 239000011162 core material Substances 0.000 claims abstract description 50
- 229910000881 Cu alloy Inorganic materials 0.000 claims abstract description 48
- 239000010410 layer Substances 0.000 claims description 42
- 229910052763 palladium Inorganic materials 0.000 claims description 24
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims description 4
- 238000000034 method Methods 0.000 description 25
- 238000011156 evaluation Methods 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 16
- 229910052759 nickel Inorganic materials 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000007547 defect Effects 0.000 description 12
- 238000007747 plating Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 11
- 229910052802 copper Inorganic materials 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000005491 wire drawing Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000010408 sweeping Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910002710 Au-Pd Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H01L2924/102—Material of the semiconductor or solid state bodies
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Abstract
Description
(全体構成)
本発明の実施形態に係るボンディングワイヤは、Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層とを有し、前記Cu合金芯材はNiを含み、ワイヤ全体に対するNiの濃度が0.1〜1.2wt.%であり、Pd被覆層の厚さが0.015〜0.150μmである。これによりボンディングワイヤは、車載用デバイスで要求される接合信頼性とボール形成性を改善することができる。
次に本発明の実施形態に係るボンディングワイヤの製造方法を説明する。ボンディングワイヤは、芯材に用いるCu合金を製造した後、ワイヤ状に細く加工し、Pd被覆層、Au表皮層を形成して、熱処理することで得られる。Pd被覆層、Au表皮層を形成後、再度伸線と熱処理を行う場合もある。Cu合金芯材の製造方法、Pd被覆層、Au表皮層の形成方法、熱処理方法について詳しく説明する。
本発明は上記実施形態に限定されるものではなく、本発明の趣旨の範囲内で適宜変更することが可能である。
以下では、実施例を示しながら、本発明の実施形態に係るボンディングワイヤについて、具体的に説明する。
まずサンプルの作製方法について説明する。芯材の原材料となるCu、Niは純度が99.99wt.%以上で残部が不可避不純物から構成されるものを用いた。B,In,Ca,P,Ti,Pt,Pdは純度が99wt.%以上で残部が不可避不純物から構成されるものを用いた。
接合信頼性は、接合信頼性評価用のサンプルを作製し、高温高湿環境に暴露したときのボール接合部の接合寿命によって判定した。
実施例1〜94に係るボンディングワイヤは、Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層とを有し、前記Cu合金芯材はNiを含み、ワイヤ全体に対するNiの濃度が0.1〜1.2wt.%であり、Pd被覆層の厚さが0.015〜0.150μmである。これにより実施例1〜94に係るボンディングワイヤは、良好な接合信頼性、及び優れたボール形成性が得られることを確認した。一方、比較例1〜4はNi濃度が上記範囲外であること、比較例5はPd被覆層の厚さが上記範囲外であることから、接合信頼性やボール形成性において十分な効果が得られない。
Claims (5)
- Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層とを有する半導体装置用ボンディングワイヤにおいて、
前記Cu合金芯材がNiを含み、ワイヤ全体に対するNiの濃度が0.1〜1.2wt.%であり、
前記Pd被覆層の厚さが0.015〜0.150μmである
ことを特徴とする半導体装置用ボンディングワイヤ。 - 前記Pd被覆層上にさらにAu表皮層を有することを特徴とする請求項1記載の半導体装置用ボンディングワイヤ。
- 前記Au表皮層の厚さが0.0005〜0.050μmであることを特徴とする請求項2記載の半導体装置用ボンディングワイヤ。
- 前記Cu合金芯材がさらにB,In,Ca,P,Tiから選ばれる少なくとも1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が3〜100wt.ppmであることを特徴とする請求項1〜3のいずれか1項記載の半導体装置用ボンディングワイヤ。
- 前記Cu合金芯材がさらにPtまたはPdを含み、前記Cu合金芯材に含まれるPt又はPdの濃度が0.05〜1.20wt.%であることを特徴とする請求項1〜4のいずれか1項記載の半導体装置用ボンディングワイヤ。
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WO2015163297A1 (ja) | 2014-04-21 | 2015-10-29 | 新日鉄住金マテリアルズ株式会社 | 半導体装置用ボンディングワイヤ |
WO2016203659A1 (ja) | 2015-06-15 | 2016-12-22 | 日鉄住金マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
EP3136435B1 (en) | 2015-07-23 | 2022-08-31 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
JP6002300B1 (ja) * | 2015-09-02 | 2016-10-05 | 田中電子工業株式会社 | ボールボンディング用パラジウム(Pd)被覆銅ワイヤ |
JP6445186B2 (ja) * | 2015-12-15 | 2018-12-26 | 日鉄ケミカル&マテリアル株式会社 | 半導体装置用ボンディングワイヤ |
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WO2017221434A1 (ja) * | 2016-06-20 | 2017-12-28 | 日鉄住金マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
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WO2019130570A1 (ja) | 2017-12-28 | 2019-07-04 | 日鉄マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
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JPS61163194A (ja) * | 1985-01-09 | 1986-07-23 | Toshiba Corp | 半導体素子用ボンデイング線 |
JP2004014884A (ja) * | 2002-06-07 | 2004-01-15 | Sumitomo Electric Wintec Inc | ボンディングワイヤー |
US20130140068A1 (en) * | 2011-12-01 | 2013-06-06 | Heraeus Materials Technology Gmbh & Co. Kg | Secondary Alloyed 1N Copper Wires for Bonding in Microelectronics Devices |
JP2013118261A (ja) * | 2011-12-02 | 2013-06-13 | Nippon Micrometal Corp | ボンディングワイヤ及びその製造方法 |
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TW201603220A (zh) | 2016-01-16 |
WO2015163297A1 (ja) | 2015-10-29 |
US10950570B2 (en) | 2021-03-16 |
KR101902091B1 (ko) | 2018-09-27 |
TWI605559B (zh) | 2017-11-11 |
EP3136427A1 (en) | 2017-03-01 |
US20170040281A1 (en) | 2017-02-09 |
KR20180105740A (ko) | 2018-09-28 |
SG11201608819VA (en) | 2016-12-29 |
JP2020031238A (ja) | 2020-02-27 |
JPWO2015163297A1 (ja) | 2017-04-20 |
EP3136427A4 (en) | 2018-03-14 |
MY168617A (en) | 2018-11-14 |
CN106233447A (zh) | 2016-12-14 |
CN111383935A (zh) | 2020-07-07 |
PH12016502098A1 (en) | 2017-01-09 |
EP3136427B1 (en) | 2023-12-06 |
KR20160144390A (ko) | 2016-12-16 |
PH12016502098B1 (en) | 2017-01-09 |
JP6167227B2 (ja) | 2017-07-19 |
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