TWI605559B - Bonding wire for semiconductor device - Google Patents

Bonding wire for semiconductor device Download PDF

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Publication number
TWI605559B
TWI605559B TW104112804A TW104112804A TWI605559B TW I605559 B TWI605559 B TW I605559B TW 104112804 A TW104112804 A TW 104112804A TW 104112804 A TW104112804 A TW 104112804A TW I605559 B TWI605559 B TW I605559B
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Taiwan
Prior art keywords
wire
bonding
coating layer
core material
concentration
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TW104112804A
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English (en)
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TW201603220A (zh
Inventor
Tetsuya Oyamada
Tomohiro Uno
Hiroyuki Deai
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Nippon Steel & Sumikin Materials Co Ltd
Nippon Micrometal Corp
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Publication of TW201603220A publication Critical patent/TW201603220A/zh
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Publication of TWI605559B publication Critical patent/TWI605559B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
    • B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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Description

半導體裝置用接合導線
本發明係關於為了連接半導體元件上之電極與外部引線等電路配線基板之配線所利用之半導體裝置用接合導線。
現在，作為接合半導體元件上之電極與外部引線間之半導體裝置用接合導線(以下，稱為「接合導線」)，主要使用線徑15~50μm左右之細線。接合導線之接合方法一般為超音波併用熱壓接方式，使用通用接合裝置、或使接合導線通過其內部而用於連接之毛細管夾具等。接合導線之接合過程係藉由以電弧熱輸入加熱熔融導線前端，並藉由表面張力形成球後，於以150~300℃之範圍內加熱之半導體元件之電極上壓接接合該球部(以下，稱為「球形接合」)，接著於形成迴路後，對外部引線側之電極壓接接合導線部(以下，稱為「楔形接合」)而結束。於接合導線之接合對象即半導體元件上之電極使用於Si基板上成膜有以Al為主體之合金之電極構造，於外部引線側之電極使用已實施鍍銀(Ag)或鍍鈀(Pd)之電極構造等。
至今接合導線之材料以Au為主流，但以LSI用途為中心已進展代替為Cu。另一方面，以近年來電動汽車或混合動力汽車之普及為背景，即使於車載用裝置用途中，對自Au代替為Cu之需要亦越來越高。
由於車載用裝置與一般之電子機器相比，需要在嚴酷之高溫高濕環境下動作，故要求於球形接合部中具有優良之接合壽命(以下， 稱為「接合可靠性」)，以及為了獲得穩定之接合強度，要求穩定形成圓度優良之球(以下，稱為「球形成性」)。
又，對車載用裝置，隨著高功能化、小型化，亦要求對安裝之高密度化之對應。當安裝高密度化時，接合導線之線徑變細，進行楔形接合時賦予接合之面積減少而難以獲得接合強度。因此，必須於楔形接合部中獲得高接合強度，即改善楔形接合性。又，由於半導體元件上之電極彼此之間隔變窄，擔心球接觸於鄰接之電極而短路，故追求於進行球形接合時使球變形為圓形之技術。此外，於樹脂密封而使用之情形，為了防止接合導線因樹脂流動而變形，且使鄰接之導線彼此接觸，亦追求迴路之直線性或抑制高度不均。
關於Cu接合導線，提出有使用高純度Cu(純度：99.99wt.%以上)者(例如專利文獻1)。Cu與Au相比有容易氧化之缺點，而有接合可靠性、球形成性、楔形接合性等較差之問題。作為防止Cu接合導線之表面氧化之方法，提出有以Au、Ag、Pt、Pd、Ni、Co、Cr、Ti等金屬被覆Cu芯材之表面之構造(專利文獻2)。又，提出有於Cu芯材之表面被覆Pd，且以Au、Ag、Cu或其等之合金被覆其表面之構造(專利文獻3)。
[先前技術文獻] [專利文獻]
[專利文獻1]日本特開昭61-48543號公報
[專利文獻2]日本特開2005-167020號公報
[專利文獻3]日本特開2012-36490號公報
由本發明者們，基於車載用裝置所要求之特性，實施評估後，判明於先前之包含Pd被覆層之Cu接合導線中，遺留如後述之實用上 之問題。
車載用裝置與一般電子機器相比，要求嚴酷高溫高濕環境下之接合可靠性。關於評估接合可靠性之方法，曾提出若干方法，作為代表性評估法之一，係使用高溫高濕試驗。於一般電子機器之情形時，高溫高濕試驗係較多於溫度為130℃、相對濕度為85%之條件下進行評估。另一方面，於車載用裝置中，由於必須要有更高溫下之使用性能，故要求於溫度為150℃、相對濕度為85%之條件下1500小時以上之接合可靠性。
已知於使用先前之包含Pd被覆層之Cu接合導線與純Al電極進行接合，且以環氧樹脂密封後，以溫度150℃、相對濕度85%實施高溫高濕實驗之結果，係於1500小時以下，於接合界面產生裂縫而接合強度下降，無法獲得車載用裝置所要求之接合可靠性。於進行接合界面之詳細觀察後，推斷接合強度下降之原因係形成有以Al與Cu為主體之複數個金屬間化合物，而該等化合物中Cu9Al4優先被腐蝕。
評估球形成性之結果，以先前之包含Pd被覆層之Cu接合導線，無法滿足車載用裝置所要求之球形成性之結果判明。尤其是經常可見表面有氣泡之球、圓度較差之球。關於產生氣泡之原因，可認為是由於藉由電弧放電使Pd熔融時吸收之H2、N2於Pd凝固時釋放之故。關於球形下降之原因，可認為是熱傳導率之影響。球因於導線方向排出熱量而凝固。因此，可認為由於Pd之熱傳導率低於Cu，故Cu比Pd先凝固，因而表面之Pd無法追隨Cu之凝固收縮而變形，從而於表面產生凹凸。此種現象係Pd被覆層之厚度越厚則越明顯。即使於Pd被覆層上被覆有Au、Ag、Cu之情形時，亦無法改善球形成性。
根據上述研究結果，於使用先前之包含Pd被覆層之Cu接合導線之情形時，無法滿足車載用裝置所追求之接合可靠性、球形成性之基準一事判明。又，可知即使使用先前研究出之著眼於Pd被覆層之膜厚 及構造之改善方法，亦無法使車載用裝置所要求之接合可靠性與球形成性兼具。
因此，本發明之目的在於提供一種改善球形接合部之接合可靠性、及球形成性，並適合車載用裝置之接合導線。
本發明之接合導線係具有Cu合金芯材、與形成於上述Cu合金芯材之表面之Pd被覆層之半導體裝置用接合導線，其特徵在於：上述Cu合金芯材包含Ni，且Ni相對於導線整體之濃度為0.1~1.2wt.%，上述Pd被覆層之厚度為0.015~0.150μm。
根據本發明，藉由包含Pd被覆層，且使Cu合金芯材包含Ni，於球形接合部中與電極之接合界面，Pd或Ni濃化，而抑制高溫高濕試驗中於接合界面之Cu、Al之擴散，使易腐蝕性化合物之成長速度降低，故而可改善接合可靠性。又，藉由使Ni相對於導線整體之濃度為0.1wt.%以上，亦可減少球表面凹凸之產生，故而可改善球形成性。
以下，對本發明之實施形態詳細地進行說明。
1.實施形態 (整體構成)
本發明之實施形態之接合導線具有Cu合金芯材、及形成於上述Cu合金芯材之表面之Pd被覆層，且上述Cu合金芯材包含Ni，Ni相對於導線整體之濃度為0.1~1.2wt.%，Pd被覆層之厚度為0.015~0.150μm。藉此，接合導線可改善車載用裝置所要求之接合可靠性與球形成性。
說明上述接合導線之Cu合金芯材、Pd被覆層之定義。Cu合金芯材與Pd被覆層之邊界係以Pd濃度為基準而判定。將Pd濃度為50at.%之位置設為邊界，將Pd濃度為50at.%以上之區域判定為Pd被覆層，將不滿50at.%之區域判定為Cu合金芯材。該根據係由於於Pd被覆層中若Pd濃度為50at.%以上，則自Pd被覆層之構造可獲得特性改善效果之故。Pd被覆層亦可包含：Pd單層區域、及Pd與Cu於導線深度方向具有濃度梯度之區域。於Pd被覆層中，形成具有該濃度梯度之區域之理由係由於有時Pd與Cu原子因製造步驟中之熱處理等而擴散。再者，Pd被覆層亦可包含不可避免之雜質。又，Cu合金芯材所含之Ni亦可藉由熱處理等擴散於Pd被覆層，而存在於Pd被覆層中。
於使用該接合導線，藉由電弧放電形成球時，於接合導線熔融且凝固之過程中，於球之表面形成Pd、Ni之濃度高於球之內部之合金層。使用該球與Al電極進行接合，且實施高溫高濕試驗後，於接合界面為Pd或Ni濃化之狀態。該Pd或Ni濃化形成之濃化層可抑制高溫高濕試驗中於接合界面之Cu、Al之擴散，且使易腐蝕性化合物之成長速度降低。藉此，接合導線可提高接合可靠性。另一方面，於Ni濃度不滿0.1wt.%，或Pd被覆層之厚度不滿0.015μm之情形時，不會充分地形成上述濃化層，無法提高接合可靠性。
由於形成於球表面之Pd、Ni濃度較高之合金層其抗氧化性優良，故可減少於球形成時球之形成位置相對於接合導線之中心偏移等不良。
再者，藉由使芯材之Cu合金包含Ni，且Ni相對於導線整體之濃度為0.1wt.%以上，亦可減少球表面凹凸之產生。其理由係可認為藉由於芯材之Cu合金添加Ni，使Cu芯材合金之熱傳導率降低，且接近於Pd被覆層之熱傳導率，而可縮小球表面與內部之自熔融狀態至凝固完成所需要之時間差。
另一方面，當Ni相對於導線整體之濃度大於1.2wt.%時，因球硬質化，且於球形接合時對Si晶片之損傷成為問題而不適於實用。又，當Pd被覆層之厚度厚於0.150μm時，球形成時於表面產生氣泡而無法獲得良好之球形成性。
順帶一提，有時於Pd被覆層之最表面存在Cu。
接合導線係可進而於Pd被覆層表面形成0.0005~0.050μm之Au表皮層。藉此，接合導線可進一步提高接合可靠性且可改善楔形接合性。
說明上述接合導線之Au表皮層之定義。Au表皮層與Pd被覆層之邊界係以Au濃度為基準而判定。將Au濃度為10at.%之位置設為邊界，將Au濃度為10at.%以上之區域判定為Au表皮層，將不滿10at.%之區域判定為Pd被覆層。又，即使為Pd濃度50at.%以上之區域，若Au存在10at.%以上則判定為Au表皮層。該等根據係由於若Au濃度為上述之濃度範圍，則可自Au表皮層之構造期待特性改善效果之故。Au表皮層係包含Au-Pd合金，即Au與Pd於導線之深度方向具有濃度梯度之區域的區域。於Au表皮層中，形成具有該濃度梯度之區域之理由係由於Au與Pd原子因製造步驟中之熱處理等而擴散之故。再者，Au表皮層亦可包含不可避免之雜質。
Au係於高溫高濕試驗中，於球形接合部之接合界面與Ni、Pd一起以包含Au、Ni、Pd之3元系合金形成濃化層，而可顯著降低易腐蝕性化合物之成長速度。藉此，接合導線可進一步提高接合可靠性。又，Au表皮層可與Pd被覆層或Cu合金芯材所含之Ni反應，提高Au表皮層、Pd被覆層、Cu合金芯材間之密著強度，抑制楔形接合時之Pd被覆層或Au表皮層之剝離。藉此，接合導線可改善楔形接合性。Au表皮層之厚度不滿0.0005μm，便無法獲得上述效果，若厚於0.050μm，則楔形接合時之超音波之傳播變差，無法獲得良好之接合強 度，故而不適於實用。另，Au表皮層係可藉由與Pd被覆層相同之方法形成。順帶一提，有時於Au表皮層之最表面存在Cu。
接合導線係藉由使Cu合金芯材進而包含選自B、In、Ca、P、Ti之至少1種以上元素，且上述元素相對於導線整體之濃度為3~100wt.ppm，而可改善高密度安裝所要求之球形接合部之擠壓形狀，即，可改善球形接合部形狀之圓度。此係由於藉由添加上述元素，可使球之結晶粒徑細微化，而可抑制球變形之故。若上述元素相對於導線整體之濃度不滿3wt.ppm，則無法獲得上述之效果，若大於100wt.ppm，則球硬質化，球形接合時之晶片損傷成為問題，故而不適於實用。
接合導線係藉由使Cu合金芯材進而包含Pt或Pd，且Cu合金芯材所含之Pt或Pd之濃度為0.05~1.20wt.%，可提高迴路形成性，即提高高密度安裝所要求之迴路之直線性，且可減少迴路之高度不均。此係由於藉由使Cu合金芯材包含Pd或Pt，接合導線之屈服強度提高，可抑制接合導線之變形之故。要提高迴路之直線性或減少高度不均，Cu合金芯材之強度越高越有效，以增加Pd被覆層之厚度等之被覆構造之改良，並無法獲得充分之效果。若Cu合金芯材所含之Pt或Pd之濃度不滿0.05wt.%，則無法獲得上述之效果，若大於1.20wt.%，則接合導線硬質化，導線接合部之變形不充分，楔形接合性降低會成為問題。
對於用於決定Pd被覆層、Au表皮層之導線表面之濃度分析而言，有效的是自接合導線之表面向深度方向以濺鍍等削開並進行分析之方法、或使導線剖面露出而進行線分析、點分析等方法。作為使導線剖面露出之方法，可利用機械研磨、離子蝕刻法等。使用於濃度分析之解析裝置係可利用設置於掃描型電子顯微鏡或透過型電子顯微鏡之歐傑電子能譜儀、X射線能量散佈分析儀、電子微探儀等。於該等濃度分析方法中，使用同時包含濺鍍裝置與歐傑電子能譜儀之掃描型 電子顯微鏡之分析方法，由於可於相對短時間內對複數個元素取得深度方向之濃度分佈，故而較佳。接合導線整體所含之元素之濃度分析時，可利用ICP發光分光分析裝置。
(製造方法)
接著說明本發明之實施形態之接合導線之製造方法。接合導線係藉由製造使用於芯材之Cu合金後，精細加工為導線狀，並形成Pd被覆層、Au表皮層，且進行熱處理而獲得。亦有於形成Pd被覆層、Au表皮層後，再次進行拉線與熱處理之情形。對Cu合金芯材之製造方法、Pd被覆層、Au表皮層之形成方法、熱處理方法，詳細地進行說明。
使用於芯材之Cu合金係可藉由共同熔解成為原料之Cu與添加之元素，並使其凝固而獲得。熔解時，可利用電弧加熱爐、高頻加熱爐、電阻加熱爐等。為了防止自大氣中混入O2、N2、H2等氣體，較好為於真空環境或Ar或N2等非活性環境中進行熔解。
將Pd被覆層、Au表皮層形成於Cu合金芯材之表面之方法有鍍敷法、蒸鍍法、熔融法等。鍍敷法可應用電解鍍敷法、無電解鍍敷法中任一者。於被稱為衝擊鍍(strike plating)、閃鍍(flash plating)之電解鍍敷中，鍍敷速度較快，且與基底之密著性亦良好。使用於無電解鍍敷之溶液分類為置換型與還原型，於厚度較薄之情形時，僅置換型鍍敷亦足夠，於厚度較厚之情形時，有效的是於置換型鍍敷後階段性實施還原型鍍敷。
於蒸鍍法中，可利用濺鍍法、離子鍍敷法、真空蒸鍍法等物理吸附、與電漿CVD等化學吸附。任一者均為乾式，不需要Pd被覆層、Au表皮層形成後之清洗，不用擔心清洗時之表面污染等。
對於Pd被覆層、Au表皮層之形成，拉線後形成至最終線徑之方法、與形成於粗徑之Cu合金芯材後進行複數次拉線直至目標線徑之 方法任一者均有效。於以前者之最終徑形成Pd被覆層、Au表皮層之情形時，製造、品質管理等較簡便。於後者之組合Pd被覆層、Au表皮層與拉線之情形時，於提高與Cu合金芯材之密著性方面較有利。作為各個形成法之具體例，可例舉於最終線徑之Cu合金芯材，於電解鍍敷溶液中連續掃掠導線並形成Pd被覆層、Au表皮層之方法，或於將較粗之Cu合金芯材浸漬於電解或無電解之鍍敷浴中而形成Pd被覆層、Au表皮層後，將導線拉線且達到最終線徑之方法等。
形成Pd被覆層、Au表皮層後，有時進行熱處理。藉由進行熱處理，原子於Au表皮層、Pd被覆層、Cu合金芯材間擴散而使密著強度提高，因此，可抑制加工中Au表皮層或Pd被覆層之剝離，於提高生產性方面有效。為了防止來自大氣中之O2之混入，較好為於真空環境或Ar或N2等非活性環境中進行熔解。
(變化例)
本發明並非限定於上述實施形態者，於本發明之主旨範圍內可適當變更。
2.實施例
以下，顯示實施例，並對本發明之實施形態之接合導線具體地進行說明。
(樣本)
首先對樣本之製作方法進行說明。使用成為芯材之原材料之Cu、Ni純度為99.99wt.%以上，且剩餘部位包含不可避免之雜質者。使用B、In、Ca、P、Ti、Pt、Pd純度為99wt.%以上，且剩餘部位包含不可避免之雜質者。
芯材之Cu合金係藉由將原料裝填於加工成直徑為Φ3~6mm之圓柱型之碳坩鍋，使用高頻爐，於真空中或N2或Ar氣體等非活性環境中加熱至1090~1300℃而使其熔解後，進行爐冷而製造。對獲得之Φ3mm 之合金，進行拉伸加工而加工至Φ0.9~1.2mm後，藉由使用模具連續地進行拉線加工等，製作出Φ300~600μm之導線。拉線時使用市售之潤滑液，並將拉線速度設為20~150m/分。為了去除導線表面之氧化膜，藉由鹽酸進行酸洗處理後，以覆蓋芯材Cu合金之表面整體之方式形成1~15μm之Pd被覆層。此外，一部分導線係於Pd被覆層之上形成0.05~1.5μm之Au表皮層。Pd被覆層、Au表皮層之形成時使用電解鍍敷法。鍍敷液係使用市售之半導體用鍍敷液。其後，藉由反復進行200~500℃之熱處理與拉線加工而加工至直徑20μm。加工後以最終斷裂伸長率為約9~15%之方式於真空中或一面流通Ar氣體一面進行熱處理。熱處理方法係一面連續掃掠導線而進行，一面使Ar氣體流動而進行。導線之進給速度設為20~200m/分，熱處理溫度係200~600℃，熱處理時間係0.2~1.0秒。
將以上述程序製作之各樣本之構成顯示於表1-1、表1-2、表1-3及表2。表中所記載之Pd被覆層與Au表皮層之厚度表示基於藉由利用Ar離子濺鍍削開導線表面並進行歐傑電子能譜儀而獲得之Pd、Au、Cu之深度方向之濃度分佈所算出之值。
(評估方法)
接合可靠性係製作接合可靠性評估用之樣本，並根據暴露於高溫高濕環境時球形接合部之接合壽命而判定。
接合可靠性評估用樣本係於在一般金屬框架上之Si基板成膜厚度1.0μm之Al-0.5%Cu之合金而形成之電極，使用市場銷售之導線接合器進行球形接合，並藉由市場銷售之環氧樹脂密封而製作。球係使N2+5%H2氣體以流量0.4~0.6L/min流動而形成，其大小設為Φ34~36μm之範圍。
將製作之接合可靠性評估用樣本使用不飽和型壓力鍋試驗機，暴露於溫度150℃、相對濕度85%之高溫高濕環境。球形接合部之接合壽命係每100小時實施球形接合部之剪切試驗，並設為剪切強度之值為初始獲得之剪切強度1/2之時間。高溫高濕試驗後之剪切試驗係藉由酸處理去除樹脂，使球形接合部露出後進行。
剪切試驗機係使用DAGE公司製造之試驗機。剪切強度之值係使用隨意選擇之球形接合部之10個部位之測定值之平均值。於上述評估中，若接合壽命不滿1500小時，則判斷為實用上有問題，設為△標記，若為1500~2000小時，則判斷為實用上沒有問題，設為○標記，若為2000小時以上，則判斷為特別優良，設為◎標記，記載於表3-1、表3-2及表4之「高溫高濕試驗」欄。
球形成性之評估係採用進行接合前之球進行觀察，判定球表面 有無氣泡，為原本圓形之球有無變形。於產生上述任一者之情形時判斷為不良。球之形成係為了抑制熔融步驟中之氧化，故以流量0.4~0.6L/min吹送N2+5%H2氣體而進行。球之大小設為26μm、32μm、38μm。針對1條件觀察30個球。於觀察時使用SEM。於球形成性之評估中，於產生3個以上不良之情形時判斷為有問題，設為△標記，於不良為1~2個之情形時判斷為沒有問題，設為○標記，於未產生不良之情形時判斷為優良，設為◎標記，並記載於表3-1、表皮3-2及表4之「球形成性」欄。
導線接合部之楔形接合性之評估係於引線框架之引線部分進行1000條之接合，並根據接合部之剝離之產生頻率而判定。引線框架係使用已施加1~3μm之鍍銀(Ag)之Fe-42at.%Ni合金引線框架。於本評估中，設想比平常更嚴格之接合條件，將平台溫度設定為比一般設定溫度域低之150℃。於上述之評估中，於產生6個以上不良之情形時，判斷為有問題，設為△標記，於不良為1~5個之情形時，判斷為沒有問題，設為○標記，於未產生不良之情形時，判斷為優良，設為◎標記，並記載於表3-1、表3-2及表4之「楔形接合性」欄。
球形接合部之擠壓形狀之評估係自正上方觀察已進行接合之球形接合部，並根據其圓度而判定。接合對象係使用於Si基板上成膜有厚度1.0μm之Al-0.5%Cu合金之電極。觀察係使用光學顯微鏡，針對1條件觀察200個部位。將自正圓較大偏離之橢圓狀者、變形具有各向異性者判斷為球形接合部之擠壓形狀不良。於上述之評估中，於產生6個以上不良之情形時，判斷為有問題，設為△標記，於1~5個之情形時，判斷為沒有問題，設為○標記，於全部獲得良好圓度之情形時，判斷為特別優良，設為◎標記，並記載於表3-1、表3-2及表4之「擠壓形狀」欄。
迴路形成性之評估係根據直線性與高度不均而判定。迴路之形 成條件係將迴路長度設為2mm，最大高度設為80μm。迴路之最大高度設為自球形接合部之電極表面至導線最高地點之距離。直線性之評估係針對1條件以掃描型電子顯微鏡觀察50條接合導線，且於以直線連結球形接合部與導線接合部之軸與接合導線間最大之偏離不滿45μm之情形時，判斷為良好，45μm以上之情形時，判斷為不良。高度不均之評估係針對1條件以掃描型電子顯微鏡觀察50條接合導線算出平均高度，且於距平均值之偏差不滿15μm之情形時，判斷為良好，15μm以上之情形時，判斷為不良。於上述評估中，直線性及高度不均中任一者之不良產生6個以上之情形時，判斷為有問題，設為△標記，於不良為1~5個之情形時，判斷為沒有問題，設為○標記，於未產生不良之情形時，判斷為優良，設為◎標記，並記載於表3-1、表3-2及表4之「迴路形成性」欄。
(評估結果)
實施例1~94之接合導線具有Cu合金芯材、及形成於上述Cu合金芯材之表面之Pd被覆層；上述Cu合金芯材包含Ni，且Ni相對於導線整體之濃度為0.1~1.2wt.%，Pd被覆層之厚度為0.015~0.150μm。藉此，可確認實施例1~94之接合導線可獲得良好之接合可靠性、及優良之球形成性。另一方面，比較例1~4係Ni濃度為上述範圍以外，比較例5係Pd被覆層之厚度為上述範圍以外，因此，於接合可靠性與球形成性中未獲得充分之效果。
確認實施例10~21、28~39、42、43、46、47、50、51、56~65、68~72、75、76、85、86、89、90、93、94係藉由於Pd被覆層上進而包含Au表皮層，可獲得優良之接合可靠性。又，確認實施例10~21、28~39、42、43、46、47、50、51、56~65、68~71、85、89係藉由使Au表皮層之層厚為0.0005~0.050μm，可獲得更優良之楔形接合性。
確認實施例22~51、64、65、70、71、74、76、78、80、82、92、94係藉由使Cu合金芯材進而包含選自B、In、Ca、P、Ti之至少1種以上元素，且上述元素相對於導線整體之濃度為3wt.ppm以上，可獲得圓度優良之球形接合部之擠壓形狀。
確認實施例52~71係藉由使Cu合金芯材進而包含Pt或Pd，且Cu合金芯材所含之Pt或Pd濃度為0.05~1.20wt.%，可獲得良好之迴路形成性。順帶一提，實施例83、85、87、89係由於Pt或Pd之濃度不滿上述範圍之下限，故未獲得優良之迴路形成性。又，實施例84、86、88、90係由於Pt或Pd濃度超過上述範圍之上限，故雖獲得優良之迴路形成性，但楔形接合性下降。

Claims (6)

  1. 一種半導體裝置用接合導線，其係包含Cu合金芯材、及形成於上述Cu合金芯材之表面之Pd被覆層者，其特徵在於：上述Cu合金芯材包含Ni，且Ni相對於導線整體之濃度為0.1wt.%以上1.2wt.%以下；上述Pd被覆層之厚度為0.015μm以上0.150μm以下。
  2. 如請求項1之半導體裝置用接合導線，其中於上述Pd被覆層上進而包含Au表皮層。
  3. 如請求項2之半導體裝置用接合導線，其中上述Au表皮層之厚度為0.0005μm以上0.050μm以下。
  4. 如請求項1之半導體裝置用接合導線，其中上述Cu合金芯材進而包含選自B、In、Ca、P、Ti之至少1種以上之元素，且上述元素相對於導線整體之濃度為3wt.ppm以上100wt.ppm以下。
  5. 如請求項1之半導體裝置用接合導線，其中上述Cu合金芯材進而包含Pt或Pd，且上述Cu合金芯材所含之Pt或Pd之濃度為0.05wt.%以上1.20wt.%以下。
  6. 如請求項1至5中任一項之半導體裝置用接合導線，其中上述接合導線之最表面存在有Cu。
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US20170040281A1 (en) 2017-02-09
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