WO2015115241A1 - ワイヤボンディング及びその製造方法 - Google Patents
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- WO2015115241A1 WO2015115241A1 PCT/JP2015/051316 JP2015051316W WO2015115241A1 WO 2015115241 A1 WO2015115241 A1 WO 2015115241A1 JP 2015051316 W JP2015051316 W JP 2015051316W WO 2015115241 A1 WO2015115241 A1 WO 2015115241A1
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Definitions
- the present invention relates to a bonding wire for connecting an electrode of a semiconductor element and an electrode of a substrate, and a manufacturing method thereof.
- the present invention relates to a core material mainly composed of Ag, a bonding wire including a discoloration prevention layer formed on the outer peripheral surface thereof, and a method for manufacturing the same.
- the bonding wire used for connecting the electrode on the semiconductor element and the electrode on the substrate is very thin. For this reason, a metal material having good conductivity and excellent workability is required for the production of bonding wires.
- a bonding wire made of Au has been conventionally used because of chemical stability and ease of handling in the atmosphere.
- Au bonding wires Au accounts for 99% or more of the weight. Therefore, Au bonding wires are very expensive. Accordingly, there is a need for bonding wires made from less expensive materials.
- ⁇ Ag bonding wires are less expensive than Au bonding wires. Moreover, the light reflectance of Ag is higher than the light reflectance of Au. Therefore, the Ag bonding wire is effective in improving the light emission efficiency of the LED or the like.
- the surface of the Ag bonding wire is easily discolored due to sulfurization.
- poor bonding to the electrode is likely to occur.
- the light emission efficiency is deteriorated due to a decrease in light reflectance.
- JP 51-85669 A JP-A-56-26459 JP2012-49198A
- a coating layer is formed on the outer peripheral surface of the Ag core material by an electrolytic method and a plating method. Therefore, it takes a long time to form the coating layer. Therefore, the problem is that the productivity of bonding wires is greatly deteriorated. Furthermore, if a metal coating layer other than Ag is formed on the Ag surface, the high light reflectance that is a feature of the Ag bonding wire is lowered. Therefore, it is a problem that the light emission efficiency of the LED or the like is not improved.
- first bonding is performed by pressing FAB (Free Air Ball) formed on the tip of a bonding wire by discharge heating or the like against one electrode. Thereafter, the outer peripheral surface of the bonding wire is pressed against the other electrode to perform 2nd bonding.
- the bonding wires disclosed in the above three patent documents have the following problems. That is, the FAB is cured by the solid solution of the metal contained in the coating layer in the vicinity of the surface of the FAB formed at the time of the first bonding. Therefore, when the FAB is pressed against the semiconductor element, the semiconductor element is easily damaged. Further, at the time of 2nd bonding, the covering layer interposed between the Ag core material and the electrode hinders bonding. As a result, poor bonding is likely to occur. As a result, there is a problem that the continuous bonding property is deteriorated.
- An object of the present invention is to provide an Ag bonding wire that can suppress surface discoloration and damage to a semiconductor element during bonding, and is excellent in continuous bonding performance and productivity.
- a bonding wire according to the present invention is formed on a core material containing 75% by mass or more of Ag, and an outer peripheral surface of the core material, and includes at least one discoloration inhibitor and at least one kind. And a discoloration preventing layer containing the surfactant.
- the anti-discoloring agent is an aliphatic organic compound having 8 to 18 carbon atoms and having at least one —SH group.
- the discoloration preventing layer formed on the outer peripheral surface of the core material of the bonding wire according to the present invention contains at least one discoloration preventing agent and at least one surfactant.
- the anti-discoloring agent is an aliphatic organic compound having 8 to 18 carbon atoms and having at least one —SH group.
- the bonding according to the present invention can prevent discoloration of the wire surface. In addition, this increases the spool replacement period, thereby improving the operating rate of the bonding apparatus.
- a discoloration prevention layer can be formed by apply
- the Ag content of the core material of the bonding wire according to the present invention is 75% by mass or more. Therefore, the bonding wire according to the present invention has a higher light reflectance than the Au bonding wire. Therefore, the light emission efficiency of the LED or the like can be improved.
- the anti-discoloration layer in the present invention hardly absorbs light. Therefore, the light reflectance of the core material containing Ag does not decrease.
- the discoloration preventing layer in the present invention is scattered from the surface of the core material by heating. Therefore, for example, when connecting by the ball bonding method, the discoloration preventing layer is scattered from the outer peripheral surface of the core material by heating at the time of FAB formation and 2nd bonding. Therefore, the bonding wire of the present invention can suppress damage to the semiconductor element due to FAB curing. Further, since the bonding failure of the 2nd junction can be suppressed, the bonding wire of the present invention is excellent in continuous bonding property.
- the surfactant may be a nonionic surfactant and / or a cationic surfactant.
- the core material of the bonding wire according to the present invention may contain at least one of Au and Pd.
- the core material of the bonding wire according to the present invention may contain one or more selected from the group consisting of Ca, Y, Sm, La, Ce, Be, B, and Ge.
- the core material of the bonding wire according to the present invention may contain at least one of Cu and Ni.
- the drawn core material is heat-treated at least once. And after completion
- the discoloration preventing layer is formed after completion of all the heat treatments. Therefore, a discoloration preventing layer that is scattered by heating during bonding can be formed on the outer peripheral surface of the core material. Therefore, it is possible to suppress the bonding failure of the obtained bonding wire and the deterioration of the continuous bonding property.
- the discoloration prevention layer is formed by apply
- the aqueous solution may be applied to the outer peripheral surface of the core material before the core material is wound on the spool.
- the aqueous solution is applied to the outer peripheral surface of the core material. May be.
- the anti-discoloring agent contained in the aqueous solution may be an aliphatic organic compound having 8 to 18 carbon atoms having at least one —SH group.
- the aqueous solution may further contain at least one surfactant.
- the method for manufacturing a bonding wire according to the present invention it is possible to suppress discoloration of the surface of the wire and damage to a semiconductor element during bonding, and to Ag that is excellent in continuous bonding property and productivity. Can be obtained.
- FIG. 1 is a cross-sectional view of a bonding wire according to an embodiment of the present invention.
- FIG. 2 is a diagram schematically showing a bonding wire manufacturing method according to an embodiment of the present invention.
- the bonding wire 10 includes a core material 12 mainly composed of Ag, and a discoloration prevention layer 14 formed on the outer peripheral surface of the core material 12.
- the core material 12 contains 75% by mass or more of Ag so as to achieve a light reflectance higher than that of the Au bonding wire.
- the core material 12 further includes one or more elements selected from Au and Pd and one or two elements selected from Ca, Y, Sm, La, Ce, Be, B, and Ge. You may contain the above elements. In addition to or in place of the selected one or more elements, at least one of Cu and Ni may be contained.
- Au is added to improve the sphericity of FAB.
- a FAB is produced using a pure Ag wire, it is difficult to stably obtain a FAB having a high sphericity.
- a high sphericity FAB can be obtained by adding a certain amount of Au.
- Pd is added to improve the corrosion resistance of the first joint.
- an electrode of a semiconductor package such as a BGA is coated with aluminum or an aluminum alloy.
- gold coating is used for the electrodes of the LED.
- an aluminum or aluminum alloy coating may be used.
- silver and aluminum are bonded, an intermetallic compound layer of silver and aluminum is formed at the bonding interface.
- Ag 2 Al grows in this compound layer, the corrosion resistance in a wet environment deteriorates.
- a Pd enriched layer is formed on the outer periphery of the FAB.
- Total amount of Au and Pd contained in the core material 12 (that is, the amount of Au or Pd when adding Au or Pd alone, or the total amount of Au and Pd when adding Au and Pd in combination) Is preferably 0.5 to 10% by mass, and more preferably 1.0 to 4.0% by mass.
- the total amount is 0.5% by mass or more, a true spherical FAB is easily formed by discharge heating.
- the total amount is 10% by mass or less, the specific resistance of the wire is maintained in an appropriate range. Further, when the total amount is 1.0% by mass or more, FAB having a more stable shape can be obtained.
- the specific resistance of the wire is 3.0 ⁇ ⁇ cm or less, and thus a wire having better characteristics can be obtained.
- the preferable total amount of Ca, Y, Sm, La, Ce, Be, B, and Ge contained in the core material 12 is 5 to 500 ppm by mass.
- the total amount is 5 mass ppm or more, the strength of the obtained wire is further improved. Therefore, it is possible to prevent the occurrence of a wire flow in which the bonded wire is moved by the flow of the mold resin during the resin molding after the bonding.
- the total amount is 500 ppm by mass or less, the shape of the FAB obtained by discharge heating is stabilized, whereby a good spherical FAB is obtained.
- Y which is effective in improving the heat resistance and strength of the wire by adding a trace amount
- La and Ce are preferable in that the compound formed from the additive element and Ag is dispersed in Ag as a matrix and contributes to the enhancement of the strength of the wire.
- addition of Ca, Be, B, and Ge is preferable in terms of availability.
- addition of Ca is most preferable from the viewpoint of usability and effect.
- addition of Cu and Ni is effective.
- Cu and Ni easily alloy with Ag of the matrix without reacting with any of Ca, Y, Sm, La, Ce, Be, B, and Ge. Therefore, the effect of adding Ca, Y, Sm, La, Ce, Be, B, and Ge is not impaired. Therefore, Cu and Ni contribute to increasing the strength of the matrix.
- Cu and Ni may be added together with Ca, Y, Sm, La, Ce, Be, B, and Ge as described above. However, the strength of the wire can be improved by adding Cu and Ni instead of Ca, Y, Sm, La, Ce, Be, B, and Ge.
- the preferable total amount of Cu and Ni contained in the core material 12 is 100 to 10000 mass ppm.
- the total amount is 100 mass ppm or more, the strength of the obtained wire is further improved. Therefore, the occurrence of wire flow in which the bonded wire is moved by the flow of the mold resin during the resin molding after bonding is suppressed.
- the total amount is 10,000 ppm by mass or less, the shape of the FAB obtained by discharge heating is stabilized, whereby a good spherical FAB is obtained.
- a preferable specific resistance value of the bonding wire 10 is equal to or lower than a specific resistance value (3.0 ⁇ ⁇ cm) of a 2N (99%) Au bonding wire. For this reason, the preferable purity of Ag used for the core material 12 is 99.9 mass% or more.
- the discoloration preventing layer 14 is formed by applying an aqueous solution containing a discoloration preventing agent to the outer peripheral surface of the core material 12.
- an aqueous solution further containing at least one surfactant in addition to the discoloration preventing agent is formed by applying to the outer peripheral surface of the core material 12.
- At least one discoloration preventing agent used in this embodiment one or more aliphatic organic compounds having at least one —SH group and having 8 to 18 carbon atoms are employed.
- a thiocarboxylic acid may be used as the aliphatic organic compound.
- a nonionic surfactant and a cationic surfactant are employed as the surfactant used in the present embodiment.
- these surfactants By using these surfactants, a stable dispersion is prepared when the discoloration inhibitor has low solubility in water.
- the discoloration preventing layer containing the discoloration preventing agent is adhered to the core material.
- nonionic surfactants have a high wettability improving effect on silver.
- a cationic surfactant is used, a strong discoloration preventing layer tends to be formed more easily than when a nonionic surfactant is used.
- the type of these surfactants is not particularly limited. Specific examples include non-ionic surfactants such as polyoxyethylene alkyl ether RO (CH 2 CH 2 O) m H, fatty acid sorbitan ester, alkyl polyglycoside, fatty acid diethanolamide RCON (CH 2 CH 2 OH) 2 , And alkyl monoglyceryl ethers ROCH 2 CH (OH) CH 2 OH.
- non-ionic surfactants such as polyoxyethylene alkyl ether RO (CH 2 CH 2 O) m H, fatty acid sorbitan ester, alkyl polyglycoside, fatty acid diethanolamide RCON (CH 2 CH 2 OH) 2 , And alkyl monoglyceryl ethers ROCH 2 CH (OH) CH 2 OH.
- the cationic surfactant include alkyltrimethylammonium salt RN + (CH 3 ) 3 X ⁇ and dialkyldimethylammonium salt RR′N + (CH 3 ) 2
- an aqueous solution containing the discoloration inhibitor and the surfactant can be used.
- the discoloration inhibitor does not necessarily need to be completely dissolved in water.
- the discoloration preventing agent may be dispersed by a surfactant.
- the aqueous solution used in this embodiment includes such a dispersion.
- the concentration of the anti-discoloring agent having —SH group in the aqueous solution is preferably 10 to 500 ppm by mass, more preferably 30 to 300 ppm by mass. When the concentration is within this range, a discoloration preventing layer having a uniform and sufficient thickness is easily formed.
- the amount of the surfactant used in the aqueous solution depends on the kind thereof, and is preferably 100 to 10,000 ppm by mass.
- the discoloration preventing layer preferably covers the core material completely so that “the exposed portion does not remain on the outer peripheral surface of the core material”.
- the thickness of the layer is preferably 0.1 nm or more in order to obtain a significant anti-discoloration effect.
- the thickness of the layer is preferably 10 nm or less so that the 2nd junction is not inhibited.
- a total of 1.0 to 10.0% by mass of Au and Pd is added to Ag having a purity of 99.9% by mass or more. Further, if necessary, Ca, Y, Sm, La, Ce, Be, B, and Ge are added in a total amount of 5 to 500 ppm by mass. Further, Cu and Ni are added in a total amount of 100 to 10000 mass ppm. After casting the Ag alloy in this manner, a rod-shaped ingot having a predetermined diameter is produced by a continuous casting method.
- the rod-shaped ingot is reduced in diameter by drawing until it reaches a predetermined diameter (for example, 12 to 50.8 ⁇ m).
- a predetermined diameter for example, 12 to 50.8 ⁇ m.
- the core material 12 having a predetermined diameter wound around the spool 11 after the drawing process is rewound.
- the core material 12 travels through the heat treatment furnace 16 for the tempering heat treatment. Thereby, all the heat treatments are completed.
- the tempering heat treatment is performed by, for example, continuously annealing the core material in a nitrogen gas atmosphere at 300 to 800 ° C. for 1 to 10 seconds.
- the core material 12 is subsequently immersed in the aqueous solution S stored in the aqueous solution tank 22 for a predetermined time (for example, 1 to 5 seconds).
- the aqueous solution S contains at least one discoloration inhibitor and at least one surfactant. While the core material 12 passes through the aqueous solution tank 22, the solution is applied to the outer peripheral surface of the core material 12. Thereby, the discoloration preventing layer 14 is formed.
- the bonding wire 10 including the discoloration preventing layer 14 formed on the outer peripheral surface of the core material 12 is manufactured.
- the manufactured bonding wire 10 is wound around the spool 20.
- the bonding wire 10 according to the present embodiment has a discoloration preventing layer 14 on the outer peripheral surface of the core material 12 containing 75% by mass or more of Ag.
- a discoloration preventing layer 14 on the outer peripheral surface of the core material 12 containing 75% by mass or more of Ag.
- the discoloration preventing layer 14 formed on the outer peripheral surface of the core material 12 is scattered from the surface of the core material 12 by heating. Therefore, the discoloration prevention layer 14 is scattered from the outer peripheral surface of the core material 12 by the heating at the time of forming the FAB and at the 2nd bonding. Therefore, in the bonding wire of the present invention, damage to the semiconductor element due to FAB curing can be suppressed. Further, since the bonding failure of the 2nd junction is suppressed, the continuous bonding property is improved.
- the discoloration preventing layer 14 is formed after all the heat treatments for the core material 12 are completed. Therefore, even the discoloration preventing layer 14 that is easily scattered by heating can be formed on the outer peripheral surface of the core material 12. Moreover, the discoloration preventing layer 14 is formed by applying an aqueous solution S containing a discoloration preventing agent to the outer peripheral surface of the core material 12. Therefore, the discoloration preventing layer 14 can be formed by a simpler method than the electrolytic method and the plating method. Therefore, the bonding wire manufacturing method according to the present invention is excellent in productivity.
- the aqueous solution S containing the discoloration preventing agent is added to the outer peripheral surface of the core material 12. To be applied.
- the aqueous solution S containing the discoloration preventing agent is continuously applied to the outer peripheral surface of the core material 12.
- the bonding wire 10 is wound around the spool 20. Therefore, the aqueous solution S can be applied after impurities adhering to the outer peripheral surface of the core material 12 are removed by heat treatment. Therefore, it is not necessary to provide a separate impurity removal step. As a result, it is possible to stably form a good discoloration preventing layer 14 on the outer peripheral surface of the core material 12.
- the color change is caused by applying the aqueous solution S to the outer surface of the core material after all the heat treatments on the core material 12 are finished and before the core material is wound on the spool 20.
- the case where the prevention layer 14 is formed has been described.
- the embodiments of the present invention are not limited to the embodiments described so far.
- the core material 12 is once wound on a spool, and then the core material 12 is washed to remove impurities such as a release agent and a wire drawing lubricant adhering to the core material 12. May be. Thereafter, the aqueous solution S can be applied to the outer peripheral surface of the core material 12 to form the discoloration preventing layer 14.
- the method of immersing the core material 12 in the aqueous solution S has been described as a method of applying the aqueous solution S containing the discoloration preventing agent to the outer peripheral surface of the core material 12.
- the aqueous solution S may be applied to the outer peripheral surface of the core material 12 by dropping or spraying.
- a silver alloy having a composition as shown in Table 1 below was dissolved to prepare a rod-shaped ingot having a diameter of 8 mm by a continuous casting method. Thereafter, the core material was formed by reducing the diameter of the rod-shaped ingot to 12 to 50.8 ⁇ m by wire drawing.
- Example 1 an aqueous solution containing a discoloration inhibitor and a surfactant was continuously applied to the outer peripheral surface of the core material 12 immediately after completion of the tempering heat treatment of the drawn core material.
- a discoloration inhibitor 1-hexadecanethiol (carbon number 15), which is an aliphatic organic compound having one —SH group, was used.
- Polyoxyethylene tridecyl ether was used as the surfactant. This produced the bonding wire which has a discoloration prevention layer.
- Comparative Example 1 a bonding wire was prepared in the same manner as in the above example, except that mercaptobenzothiazole, which is an aromatic organic compound, was used as the discoloration inhibitor.
- a bonding wire was prepared in the same manner as in the above example except that sodium oleate (18 carbon atoms), which is an aliphatic organic compound having no —SH group, was used as the anti-discoloration agent. did.
- a bonding wire was prepared by the same method as in the above example except that the surfactant was not used.
- Comparative Example 4 the tempering heat treatment was performed after applying the aqueous solution by the same method as in Example 1 before the tempering heat treatment of the drawn core material.
- the state of the wire surface was evaluated by measuring the film thickness of the silver sulfide on the wire surface using the SERA method (continuous electrochemical reduction method). That is, after applying an electrolytic solution to the wire surface, a small current (90 ⁇ A / cm 2) was passed from the electrode to cause a reduction reaction. The time during which the silver sulfide reduction potential depending on the reduction reaction product on the wire surface was between -0.25 and -0.80 V was measured. Thereby, the film thickness of silver sulfide generated on the wire surface was measured.
- the sample was evaluated as “A” because there was no practical problem.
- the sample was evaluated as “D” because the wire surface was discolored to affect the bondability and reliability.
- the specific resistance of each wire was calculated
- the bonding wires according to the present invention may be the following first to fifth bonding wires.
- the first bonding wire is a bonding wire having a core material containing 75% by mass or more of Ag, and a discoloration prevention layer covering the outer peripheral surface of the core material,
- An aqueous solution containing at least one aliphatic organic compound having at least one thiol group and having 8 to 18 carbon atoms and at least one surfactant is used as the anti-discoloration layer.
- the second bonding wire is the first bonding wire, wherein the surfactant is a nonionic surfactant and / or a cationic surfactant.
- the third bonding wire is the first or second bonding wire, wherein the core material contains at least one of Au and Pd.
- the fourth bonding wire is characterized in that the core material contains one or more selected from Ca, Y, Sm, La, Ce, Be, B and Ge.
- the fifth bonding wire is the third or fourth bonding wire, wherein the core material contains at least one of Cu and Ni.
- the bonding wire manufacturing method according to the present invention may be the following first to fourth manufacturing methods of bonding wires.
- the first method for producing a bonding wire is a method for producing a bonding wire having a core material containing 75% by mass or more of Ag and a discoloration preventing layer covering the outer peripheral surface of the core material.
- the core material is subjected to heat treatment once or a plurality of times, and after the completion of all the heat treatment, an aqueous solution containing a discoloration inhibitor is applied to the outer peripheral surface of the core material to form the discoloration prevention layer.
- a feature is a method of manufacturing a bonding wire.
- the manufacturing method of the second bonding wire is characterized in that after the completion of all the heat treatments on the drawn core material, the aqueous solution is applied to the outer peripheral surface of the core material before being wound on a spool.
- the method for manufacturing the first bonding wire is characterized in that all the heat treatment for the drawn core material is completed, and then the aqueous solution is applied to the outer peripheral surface of the core material after washing the core material.
- the aqueous solution includes at least one aliphatic organic compound having at least one thiol group and having 8 to 18 carbon atoms, and at least one surfactant.
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Abstract
Description
密閉した18リットル容器中に0.05%硫酸アンモニウム水溶液100ml、および100mmのボンディングワイヤを挿入した。その後、硫化水素ガス中で30分間暴露試験した。
ボンディング装置を用いて、ボンディングワイヤの直径の2倍の直径を有するFABを作製した。側面からFABのビッカース硬さを測定した。ビッカース硬度計の荷重を2gf、加圧時間を10秒間とした。ビッカース硬さが4N(99.99%)Auワイヤ(HV44)の1.5倍(HV66)以下のとき、1st接合時のチップクラックおよびパッドめくれなどの不具合が生じないとして、試料を「A」と評価した。ビッカース硬さが1.5倍を超えたとき、用途が限定されるとして、試料を「C」と評価した。
ボンディング装置を用いて、ボンディングワイヤの直径の2倍の直径を有するFABを100個作製した。FABのワイヤの伸長方向およびこの方向に垂直な方向の直径を測定した。伸長方向の直径と上記垂直方向の直径との差(直径差)がすべて線径の±10%以下であるとき、真球に近いとして、試料を「A」と評価した。90個以上のFABの直径差が線径の±10%以下であり、かつ、1個以上10個以下のFABの直径差が線径の±10%を超えて±20%以下のとき、ほぼ問題がないとして、試料を「B」と評価した。ただし、線形の±20%を超える直径の差を有するFABが一つでも観測されたときは、真球度が低いため、用途が限定されるとして、試料を「C」と評価した。
4端子法を用いて、室温での電気抵抗を測定することにより、各ワイヤの固有抵抗を求めた。測定された固有抵抗が金ボンディングワイヤの固有抵抗と同等以下であれば、ワイヤに流れる信号の伝達速度、および、半導体パッケージの性能が低下しないため、金ボンディングワイヤとの置き換えが可能とみなした。すなわち、測定された固有抵抗が3.0μΩ・cm以下のとき、容易に金ボンディングワイヤとの置き換えが可能として、試料を「A」と評価した。測定された固有抵抗が3.0μΩ・cmを超え、5.0μΩ・cm以下のとき、実用上問題なく金ボンディングワイヤとの置き換えが可能として、試料を「B」と評価した。測定された固有抵抗が5.0μΩ・cmを超えたとき、金ボンディングワイヤとの置き換えは困難として、試料を「D」と評価した。
2mmの長さのボンディングワイヤを用いてボンディングした試料を市販のエポキシ樹脂で封止した。その後、X線非破壊観察装置を用いて最大ワイヤフロー量の測定を行った。最大ワイヤフロー量をワイヤ長2mmで除して得られる割合が2%未満のとき、試料を「A」と評価した。割合が2%以上のとき、使用上の問題があるとして、試料を「D」と評価した。
また、本発明に係るボンディングワイヤは、以下の第1~5のボンディングワイヤでもよい。
上記第1のボンディングワイヤは、Agを75質量%以上含有する芯材と、この芯材の外周面を被覆する変色防止層と、を有するボンディングワイヤであって、
前記変色防止層が、少なくとも1個のチオール基を有し、炭素数が8~18の範囲内である脂肪族有機化合物少なくとも1種と、界面活性剤少なくとも1種と、を含有する水溶液を前記芯材の外周面に塗布することにより形成されたことを特徴とするボンディングワイヤである。
上記第2のボンディングワイヤは、上記界面活性剤が非イオン界面活性剤及び/又は陽イオン界面活性剤であることを特徴とする、上記第1のボンディングワイヤである。
上記第3のボンディングワイヤは、前記芯材が、Au及びPdの少なくとも一方を含有することを特徴とする、上記第1又は2のボンディングワイヤである。
上記第4のボンディングワイヤは、前記芯材が、Ca、Y、Sm、La、Ce、Be、B及びGeの中から選択された1種又は2種以上を含有することを特徴とする、上記第3のボンディングワイヤである。
上記第5のボンディングワイヤは、前記芯材が、Cu及びNiの少なくとも一方を含有することを特徴とする、上記第3又は4のボンディングワイヤである。
また、本発明に係るボンディングワイヤの製造方法は、以下の第1~4のボンディングワイヤの製造方法であってもよい。
上記第1のボンディングワイヤの製造方法は、Agを75質量%以上含有する芯材と、この芯材の外周面を被覆する変色防止層とを有するボンディングワイヤの製造方法であって、伸線加工した前記芯材に対し、1回又は複数回熱処理を行い、全ての熱処理の終了後に、変色防止剤を含有する水溶液を前記芯材の外周面に塗布して前記変色防止層を形成することを特徴とする、ボンディングワイヤの製造方法である。
上記第2ボンディングワイヤの製造方法は、伸線加工した前記芯材に対する全ての熱処理の終了後であって、スプールに巻き取る前に前記水溶液を前記芯材の外周面に塗布することを特徴とする、上記第1のボンディングワイヤの製造方法である。
上記第3のボンディングワイヤの製造方法は、伸線加工した前記芯材に対する全ての熱処理が終了し、その後、前記芯材を洗浄した後に前記水溶液を前記芯材の外周面に塗布することを特徴とする、上記第1のボンディングワイヤの製造方法である。
上記第4のボンディングワイヤの製造方法は、前記水溶液が、少なくとも1個のチオール基を有し炭素数が8~18の範囲内である脂肪族有機化合物少なくとも1種と界面活性剤少なくとも1種とを含有することを特徴とする、上記第1~3のいずれかのボンディングワイヤの製造方法である。
12…芯材
14…変色防止層
20…スプール
22…水溶液槽
Claims (10)
- Agを75質量%以上含有する芯材、および、
前記芯材の外周面上に形成され、少なくとも1種の変色防止剤と少なくとも1種の界面活性剤とを含有する変色防止層、を有し、
前記変色防止剤が、少なくとも1個の―SH基を有する、炭素数8~18の脂肪族有機化合物である、ボンディングワイヤ。 - 前記界面活性剤が非イオン界面活性剤及び/又は陽イオン界面活性剤である、請求項1に記載のボンディングワイヤ。
- 前記芯材が、Au及びPdのうちの少なくとも一方を含有する、請求項1又は2に記載のボンディングワイヤ。
- 前記芯材が、Ca、Y、Sm、La、Ce、Be、B、及びGeからなる群から選択された1種又は2種以上の元素を含有する、請求項3に記載のボンディングワイヤ。
- 前記芯材が、Cu及びNiのうちの少なくとも一方を含有する、請求項3に記載のボンディングワイヤ。
- 前記芯材が、Cu及びNiのうちの少なくとも一方を含有する、請求項4に記載のボンディングワイヤ。
- Agを75質量%以上含有する伸線加工された芯材に対して少なくとも1回熱処理を行うこと、および、
全ての熱処理の終了後に、少なくとも1種の変色防止剤を含有する水溶液を前記芯材の外周面に塗布することにより、前記芯材の外周面上に変色防止層を形成することを含むボンディングワイヤの製造方法。 - 前記全ての熱処理の終了後の前記芯材をスプールに巻き取る前に、前記水溶液を前記芯材の外周面に塗布する、請求項7に記載のボンディングワイヤの製造方法。
- 前記全ての熱処理の終了後、かつ、前記水溶液を前記芯材の外周面に塗布する前に、前記芯材を洗浄することを含む請求項7に記載のボンディングワイヤの製造方法。
- 前記変色防止剤は、少なくとも1個の―SH基を有する、炭素数8~18の脂肪族有機化合物であり、かつ、
前記水溶液は、さらに、少なくとも1種の界面活性剤を含有する、請求項7~9のいずれか1項に記載のボンディングワイヤの製造方法。
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101758038B1 (ko) * | 2015-08-12 | 2017-07-13 | 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
KR101777995B1 (ko) * | 2015-06-15 | 2017-09-12 | 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
JP2018100433A (ja) * | 2016-12-19 | 2018-06-28 | 株式会社大和化成研究所 | 気化性変色防止剤 |
WO2018180189A1 (ja) * | 2017-03-31 | 2018-10-04 | タツタ電線株式会社 | ボンディングワイヤ及び半導体装置 |
WO2019193770A1 (ja) * | 2018-04-02 | 2019-10-10 | 田中電子工業株式会社 | ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法 |
WO2019193771A1 (ja) * | 2018-04-02 | 2019-10-10 | 田中電子工業株式会社 | ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法 |
US10468370B2 (en) | 2015-07-23 | 2019-11-05 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
US10950570B2 (en) | 2014-04-21 | 2021-03-16 | Nippon Steel Chemical & Material Co., Ltd. | Bonding wire for semiconductor device |
WO2021100583A1 (ja) * | 2019-11-22 | 2021-05-27 | 日鉄ケミカル&マテリアル株式会社 | 半導体装置用Ag合金ボンディングワイヤ |
JP2022544498A (ja) * | 2019-08-13 | 2022-10-19 | サン-ゴバン グラス フランス | ガラス基材上の銀ワイヤの腐食低減 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015074703A1 (en) * | 2013-11-21 | 2015-05-28 | Heraeus Deutschland GmbH & Co. KG | Coated wire for bonding applications |
SG10201508103QA (en) * | 2015-09-29 | 2017-04-27 | Heraeus Materials Singapore Pte Ltd | Alloyed silver wire |
SG10201509634UA (en) | 2015-11-23 | 2017-06-29 | Heraeus Oriental Hitec Co Ltd | Coated wire |
CN105950895B (zh) * | 2016-05-06 | 2018-04-20 | 河南优克电子材料有限公司 | 一种小晶片led封装用微细银合金键合线的制造方法 |
USD904836S1 (en) * | 2019-06-03 | 2020-12-15 | Ji Yeon JEONG | Tongs for cooking |
CN117133852B (zh) * | 2023-07-20 | 2024-08-06 | 贵研半导体材料(云南)有限公司 | 一种低光衰抗变色键合银丝及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5691306A (en) * | 1979-12-21 | 1981-07-24 | Nippon Electric Co | Bonding wire |
JP2012049198A (ja) * | 2010-08-24 | 2012-03-08 | Sumitomo Metal Mining Co Ltd | 銀ボンディングワイヤ |
JP2013219329A (ja) * | 2012-03-15 | 2013-10-24 | Jx Nippon Mining & Metals Corp | 半導体装置用ボンディングワイヤ |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5423794B2 (ja) | 1975-01-27 | 1979-08-16 | ||
JPS5626459A (en) | 1979-08-11 | 1981-03-14 | Noge Denki Kogyo:Kk | Bonding wire for assembling of semiconductor device |
JP2002308708A (ja) * | 2001-04-12 | 2002-10-23 | Katayama Chem Works Co Ltd | 銀系抗菌剤用の変色防止剤、それを含む銀系抗菌剤および抗菌方法 |
CA2603276A1 (en) * | 2005-04-14 | 2006-10-26 | General Technology Company Limited | Ink composition and printing method using the same |
-
2015
- 2015-01-20 MY MYPI2016702764A patent/MY175700A/en unknown
- 2015-01-20 KR KR1020157036378A patent/KR101668975B1/ko active IP Right Grant
- 2015-01-20 CN CN201580001101.3A patent/CN105393343A/zh active Pending
- 2015-01-20 WO PCT/JP2015/051316 patent/WO2015115241A1/ja active Application Filing
- 2015-01-30 TW TW104103309A patent/TWI534835B/zh active
- 2015-01-30 JP JP2015017274A patent/JP5842068B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5691306A (en) * | 1979-12-21 | 1981-07-24 | Nippon Electric Co | Bonding wire |
JP2012049198A (ja) * | 2010-08-24 | 2012-03-08 | Sumitomo Metal Mining Co Ltd | 銀ボンディングワイヤ |
JP2013219329A (ja) * | 2012-03-15 | 2013-10-24 | Jx Nippon Mining & Metals Corp | 半導体装置用ボンディングワイヤ |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10950570B2 (en) | 2014-04-21 | 2021-03-16 | Nippon Steel Chemical & Material Co., Ltd. | Bonding wire for semiconductor device |
KR101925236B1 (ko) * | 2015-06-15 | 2018-12-04 | 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
KR101777995B1 (ko) * | 2015-06-15 | 2017-09-12 | 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
US10737356B2 (en) | 2015-06-15 | 2020-08-11 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
US10610976B2 (en) | 2015-06-15 | 2020-04-07 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
US10414002B2 (en) | 2015-06-15 | 2019-09-17 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
US10137534B2 (en) | 2015-06-15 | 2018-11-27 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
US10468370B2 (en) | 2015-07-23 | 2019-11-05 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
KR102183517B1 (ko) * | 2015-08-12 | 2020-11-26 | 닛데쓰마이크로메탈가부시키가이샤 | 반도체 장치용 본딩 와이어 |
US9887172B2 (en) | 2015-08-12 | 2018-02-06 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
KR101758038B1 (ko) * | 2015-08-12 | 2017-07-13 | 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
KR20180029946A (ko) * | 2015-08-12 | 2018-03-21 | 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
US10121758B2 (en) | 2015-08-12 | 2018-11-06 | Nippon Micrometal Corporation | Bonding wire for semiconductor device |
JP2018100433A (ja) * | 2016-12-19 | 2018-06-28 | 株式会社大和化成研究所 | 気化性変色防止剤 |
WO2018180189A1 (ja) * | 2017-03-31 | 2018-10-04 | タツタ電線株式会社 | ボンディングワイヤ及び半導体装置 |
JPWO2018180189A1 (ja) * | 2017-03-31 | 2019-12-12 | タツタ電線株式会社 | ボンディングワイヤ及び半導体装置 |
JP2019186248A (ja) * | 2018-04-02 | 2019-10-24 | 田中電子工業株式会社 | ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法 |
JP2019186246A (ja) * | 2018-04-02 | 2019-10-24 | 田中電子工業株式会社 | ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法 |
WO2019193771A1 (ja) * | 2018-04-02 | 2019-10-10 | 田中電子工業株式会社 | ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法 |
WO2019193770A1 (ja) * | 2018-04-02 | 2019-10-10 | 田中電子工業株式会社 | ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法 |
US11251153B2 (en) | 2018-04-02 | 2022-02-15 | Tanaka Denshi Kogyo K.K. | Noble metal-coated silver wire for ball bonding, and semiconductor device using noble metal-coated silver wire for ball bonding |
US11456271B2 (en) | 2018-04-02 | 2022-09-27 | Tanaka Denshi Kogyo K.K. | Noble metal-coated silver wire for ball bonding and method for producing the same, and semiconductor device using noble metal-coated silver wire for ball bonding and method for producing the same |
JP2022544498A (ja) * | 2019-08-13 | 2022-10-19 | サン-ゴバン グラス フランス | ガラス基材上の銀ワイヤの腐食低減 |
WO2021100583A1 (ja) * | 2019-11-22 | 2021-05-27 | 日鉄ケミカル&マテリアル株式会社 | 半導体装置用Ag合金ボンディングワイヤ |
JP6913265B1 (ja) * | 2019-11-22 | 2021-08-04 | 日鉄ケミカル&マテリアル株式会社 | 半導体装置用Ag合金ボンディングワイヤ |
US11612966B2 (en) | 2019-11-22 | 2023-03-28 | Nippon Steel Chemical & Material Co., Ltd. | Ag alloy bonding wire for semiconductor device |
Also Published As
Publication number | Publication date |
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KR101668975B1 (ko) | 2016-10-24 |
JP2015164186A (ja) | 2015-09-10 |
TWI534835B (zh) | 2016-05-21 |
CN105393343A (zh) | 2016-03-09 |
KR20160007663A (ko) | 2016-01-20 |
JP5842068B2 (ja) | 2016-01-13 |
TW201535417A (zh) | 2015-09-16 |
MY175700A (en) | 2020-07-06 |
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