WO2016098707A1 - 半導体装置用ボンディングワイヤ - Google Patents
半導体装置用ボンディングワイヤ Download PDFInfo
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- WO2016098707A1 WO2016098707A1 PCT/JP2015/084823 JP2015084823W WO2016098707A1 WO 2016098707 A1 WO2016098707 A1 WO 2016098707A1 JP 2015084823 W JP2015084823 W JP 2015084823W WO 2016098707 A1 WO2016098707 A1 WO 2016098707A1
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- bonding
- wire
- bonding wire
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- coating layer
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
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- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0227—Rods, wires
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Definitions
- the present invention relates to a bonding wire for a semiconductor device used for connecting an electrode on a semiconductor element and a wiring of a circuit wiring board such as an external lead.
- bonding wires fine wires having a wire diameter of about 15 to 50 ⁇ m are mainly used as bonding wires for semiconductor devices (hereinafter referred to as bonding wires) for bonding between electrodes on semiconductor elements and external leads.
- the bonding wire bonding method is generally a thermocompression bonding method using ultrasonic waves, and a general-purpose bonding apparatus, a capillary jig for connecting the bonding wire through the inside, or the like is used.
- the wire tip is heated and melted by arc heat input to form a ball portion by surface tension, and then this ball portion is pressure bonded onto the electrode of the semiconductor element heated within a range of 150 to 300 ° C.
- the wire portion is crimped (hereinafter referred to as “wedge bonding”) to the electrode on the external lead side.
- the electrode on the semiconductor element that is the bonding partner of the bonding wire is an electrode structure in which an alloy film mainly composed of Al is formed on a Si substrate, and the electrode on the external lead side is subjected to Ag plating, Pd plating, or the like A structure is often used.
- the bonding wire is required to have good ball formability, ball bondability, wedge bondability, loop formability and the like.
- Au has been mainly used as a bonding wire material that comprehensively satisfies these required performances.
- bonding wires using materials that are less expensive than Au are being actively developed.
- Au bonding wires are the mainstream, development aimed at substituting inexpensive materials with Au has been performed.
- the reason why the Au bonding wire is used in the memory field is that electric resistance is low and excellent wedge bondability can be obtained.
- the lower the electrical resistance the greater the current that can flow per bonding wire.
- the total number of bonding wires can be reduced, the memory can be miniaturized, and high productivity can be obtained.
- Au is soft and highly resistant to surface deterioration phenomena such as surface oxidation.
- the Au bonding wire can provide excellent wedge bondability even when bonded under low energy conditions. Therefore, damage to the semiconductor element at the time of wedge bonding, which is a problem in a semiconductor element for memory that is becoming thinner, is obtained. Can be reduced.
- the specific resistance of Ag is 1.6 ⁇ ⁇ cm, which is lower than the specific resistance of Au of 2.2 ⁇ ⁇ cm. From the viewpoint of reducing the specific resistance, Ag is more advantageous than Au. Further, the Young's modulus of Ag (about 83 ⁇ 10 9 N / m 2 ) is almost equal to the Young's modulus of Au (about 80 ⁇ 10 9 N / m 2 ). Ag is also highly resistant to surface degradation. Therefore, a bonding wire using Ag (hereinafter referred to as an Ag bonding wire) is expected to have excellent wedge bondability equivalent to that of an Au bonding wire.
- the Ag bonding wire is inferior in the bonding reliability of the ball bonding portion (hereinafter abbreviated as “ball bonding reliability”) compared to the Au bonding wire, so that it is difficult to put it into practical use as a bonding wire for memory.
- ball bonding reliability evaluation a test for accelerating the life of the semiconductor, such as a high temperature standing test and a high temperature high humidity test, is used.
- the Ag bonding wire is a problem in aiming at practical use as a bonding wire for memory because the ball bonded portion is peeled off in a shorter time in the high temperature and high humidity test than the Au bonding wire. This is because if the separation of the ball joint portion occurs, the electrical connection is lost at the ball joint portion, causing a failure of the semiconductor device.
- Patent Document 1 discloses a technique of adding Au and Pd to Ag to form an alloy as a method for solving the problem of ball joint reliability.
- Ag—Au alloy is 0.01 to 30.00 wt. % Au and the balance Ag
- the Ag—Pd alloy is 0.01 to 10.00 wt. % Pd and the balance Ag
- the Ag—Au—Pd alloy is 0.01 to 30.00 wt. % Au, 0.01 to 10.00 wt. Alloys with% Pd and balance Ag have been reported.
- Patent Document 2 discloses a structure in which a coating layer of Pd or Pt is provided on the outer periphery of an Ag alloy as a method for solving the problem of ball joint reliability.
- Ball joint reliability is generally evaluated by a high temperature test or a high temperature and high humidity test.
- a high temperature test When an Ag bonding wire is used, peeling of the ball joint portion becomes a problem particularly in a high temperature and high humidity environment.
- the separation of the ball joint in the high temperature and high humidity test is considered to be caused by a part of the intermetallic compound of Ag and Al corroding and the adhesion at the interface between Ag and the corrosion product being lowered.
- the high temperature and high humidity test is a test called PCT (Pressure Cooker Test) performed under the conditions of a temperature of 121 ° C.
- HAST Highly Accelerated temperature and Humidity Stress Test
- the wedge bondability required for memory bonding wires is evaluated by bonding a bonding wire and determining whether or not a bonding failure occurs at the wedge bonded portion.
- the bonding failure is defined as a state in which the bonding wire is peeled off from the electrode on the lead side.
- the bonding wire for memory is required not to cause bonding failure when wedge bonding is performed with respect to the Ag electrode on the external lead side in a temperature range of 175 ° C. or lower and low energy conditions.
- the bonding wire in which Pd, Au or the like is added to Ag disclosed in Patent Document 1 can improve the ball bonding reliability in a high temperature and high humidity environment.
- the bonding wire cannot satisfy the standard of ball bonding reliability required for the bonding wire for memory.
- it is effective to increase the concentration of the alloy element.
- the wire becomes hard and the wedge bonding property is lowered. Therefore, it has been difficult to satisfy the ball bonding reliability and the wedge bondability required for the memory bonding wire only by the Ag alloy design alone.
- Ag easily adsorbs sulfur, sulfur adsorbed on the surface of the wire hinders the diffusion of Ag at the time of wedge bonding, and there is a problem that wedge bondability is lowered.
- the bonding wire having a structure in which a coating layer such as Pd or Pt is provided on the surface of Ag disclosed in Patent Document 2 can improve the ball bonding reliability in a high temperature and high humidity environment. ing.
- the bonding wire cannot satisfy the ball bonding reliability standard required for the bonding wire for memory.
- the wedge bondability was improved by using an element having a lower sulfur adsorptivity than Ag in the coating layer, but the adhesion at the interface between the coating layer and Ag was low. There was a problem of peeling from.
- An object of the present invention is to provide a bonding wire that solves the above-described problems and can simultaneously satisfy the ball bonding reliability and the wedge bonding properties required for a memory bonding wire.
- the bonding wire according to the present invention includes one or more of Ga, In and Sn in a total of 0.1 to 3.0 at. And a balance containing Ag and inevitable impurities, and one or more of Pd and Pt, or one or more of Pd and Pt and Ag formed on the surface of the core, and the balance And a coating layer made of inevitable impurities, wherein the coating layer has a thickness of 0.005 to 0.070 ⁇ m.
- ball joint reliability and wedge jointability can be satisfied at the same time.
- Ga, In, or Sn is effective as an element added to the core material made of Ag, and its concentration is 0.1 at. % Or more is effective.
- Pd or Pt is effective as the element used for the coating layer, and the thickness of the coating layer is 0.005 ⁇ m or more. That is, when the bonding wire according to the present embodiment was used, peeling did not occur at the ball joint with the Al electrode even after 120 hours had elapsed in HAST. In addition, the electrical connection was not lost.
- Ga, In, or Sn is effective as an element contained in the core material, and the concentration of one or more of Ga, In, and Sn is 0.05 at. % Or more and 3.0 at. % Or less is effective.
- Pd or Pt is effective as the element used for the coating layer, and the thickness of the coating layer is effective from 0.003 ⁇ m to 0.070 ⁇ m. That is, when the bonding wire according to the present embodiment is used, even when wedge bonding is performed at a low energy condition and 175 ° C., bonding failure does not occur. The reason why excellent wedge bondability was obtained will be described below.
- the first reason is that softness can be maintained by appropriately controlling the total concentration of one or more of Ga, In, and Sn contained in the core material.
- the second reason is that the core material is provided with a coating layer containing one or more of Pd and Pt, or one or more of Pd and Pt and Ag, and the balance made of unavoidable impurities. This is because it can be suppressed.
- the third reason is that by appropriately controlling the element added to the core material, the element used for the coating layer, and the thickness of the coating layer, the adhesion between the core material and the coating layer is improved, and the coating layer layer at the time of wedge bonding is improved. This is because peeling can be suppressed. From the above, it has been clarified that the bonding wire according to the present embodiment satisfies the standard for the wedge bondability required for the bonding wire for memory.
- a total of one or more of Ga, In and Sn is 0.1 to 3.0 at.
- the bonding wire according to the present embodiment can satisfy the performance required for the bonding wire for memory and can be reduced in cost as compared with the Au bonding wire, so that it can be replaced with the Au bonding wire. It was.
- the total of one or more of Ga, In and Sn is 0.1 at. If it is less than%, the growth suppression of the intermetallic compound of Ag and Al that causes corrosion in the high-temperature and high-humidity test is insufficient, and the ball joint reliability required for memory applications cannot be obtained.
- a total of one or more of Ga, In and Sn is 3.0 at.
- a bonding wire containing more than% is not suitable for practical use because the strength of the bonding wire increases and the wedge bondability decreases.
- the total concentration is 0.2 to 1.5 at. % Is preferable because both softness and high ductility can be achieved, and excellent wedge bondability can be obtained.
- the bonding wire has a total concentration of 0.3 to 1.0 at. % Is more preferable because excellent wedge bondability can be obtained.
- one or more elements of In and Sn are 0.1 to 3.0 at. % Is preferable because a better effect of improving the ball bonding reliability can be obtained. This is because In or Sn contained in the core material is particularly excellent in the growth suppressing effect of the intermetallic compound of Ag and Al at the bonding interface.
- the concentration of Ga, In, and Sn contained in the core material of the bonding wire according to the present embodiment is determined based on the Auger Electron Spectroscopy (AES) apparatus and the scanning electron microscope (SEM). ) Or an energy dispersive X-ray-spectrometry (EDX) apparatus provided in a transmission electron microscope (TEM).
- AES Auger Electron Spectroscopy
- SEM scanning electron microscope
- EDX energy dispersive X-ray-spectrometry
- TEM transmission electron microscope
- a method of exposing the core material a method of embedding a bonding wire in a resin and exposing a cross section by mechanical polishing or a method of scraping the surface of the bonding wire with an Ar ion beam can be used.
- the covering layer of the bonding wire according to this embodiment has a total concentration of Pd, Pt, and Au of 50 at. It is defined as an area over%.
- the thickness and composition of the coating layer of the bonding wire can be measured using an Auger electron spectroscopic analyzer. A specific method is to first measure the concentration while scraping the surface of the bonding wire by sputtering or the like, and obtain a concentration profile in the depth direction. Elements targeted for the concentration profile are Ag, Ga, In, Sn, Pd, and Pt. Next, the total concentration of Pd and Pt is calculated based on the obtained concentration profile.
- the thickness of the coating layer may be measured at one place, but it is preferable to use an average value of measured values at two or more places.
- the bonding wire according to this embodiment includes an alloy layer that includes one or more of Ga, In, and Sn, one or more of Pd and Pt, and Ag between the core material and the coating layer, and the balance is made of inevitable impurities.
- a ball having a small diameter hereinafter referred to as a small diameter ball
- the occurrence of a ball having a low true sphericity hereinafter referred to as a deformed ball
- a small-diameter ball is defined as a ball whose diameter is 1.5 to 1.7 times the wire diameter of the bonding wire. Usually, the diameter of the ball is in the range of 1.7 to 2.5 times the wire diameter of the bonding wire.
- the total concentration of Pd and Pt is 5 to 50 at. % Region and the concentration of Ga, In, and Sn is defined as a region higher than the concentration of the central portion of the bonding wire. If the thickness of the alloy layer is 10 to 60% with respect to the thickness of the coating layer, it is preferable for small diameter balls because arc discharge is stable and variation in ball diameters can be suppressed.
- the composition of the alloy layer can be measured by the same method as the composition of the coating layer. As a specific method, first, concentration measurement is performed while cutting the surface of the bonding wire by sputtering or the like to obtain a concentration profile in the depth direction. Elements targeted for the concentration profile are Ag, Ga, In, Sn, Pd, and Pt. Next, the total concentration of Pd and Pt is calculated based on the obtained concentration profile.
- the thickness and composition of the alloy layer may be measured values at one place, but it is preferable to use an average value of measured values at two or more places.
- the effectiveness of the bonding wire according to this embodiment with respect to the capillary life will be described.
- the bonding wire according to the present embodiment 15-50 at.
- the friction between the surface of the bonding wire and the capillary can be reduced, and the service life of the capillary can be improved. This is because Au is softer than Pd and Pt of the coating layer and has excellent ductility.
- the Au-containing region has a thickness of 0.001 to 0.050 ⁇ m, an excellent improvement effect can be obtained, which is effective.
- the concentration of Au is 15 at. If it is less than% or the thickness is less than 0.050 ⁇ m, the improvement effect is insufficient.
- the concentration of Au is 50 at.
- the thickness and composition of the Au-containing region can be measured using an Auger electron spectrometer. A specific method can be measured by the same method as the composition of the coating layer.
- the core material further contains at least one of Cu, Pd, Pt and Au in a total amount of 0.1 to 0.7 at.
- the content of the element is included, the crystal grains of the ball can be made finer, and a ball shape closer to a perfect circle can be obtained.
- the concentration is 0.1 at. If it is less than%, the ball shape improvement effect cannot be obtained.
- the concentration is 0.7 at. If it exceeds%, the ball becomes hard and chip damage at the time of joining becomes a problem, so it is not suitable for practical use.
- the concentration of Pd, Pt and Au contained in the core material of the bonding wire can be measured by using an EDX apparatus in which the core material portion is provided in AES, SEM or TEM.
- a method of exposing the core material a method of embedding a bonding wire in a resin and exposing a cross section by mechanical polishing or a method of scraping the surface of the bonding wire with an Ar ion beam can be used.
- the bonding wire including the core material, the coating layer, and the alloy layer according to this embodiment has a total of 80 to 500 at.s of one or more of B, P, Ca, La, and Se. By including ppm, the straightness of the loop can be improved. With recent miniaturization of memory packages, the pitch of electrodes on the lead side is narrowed, and the bonding interval between bonding wires is also narrowed. The bonding wire is required to have high straightness in order to prevent a short circuit due to contact between the wires.
- the bonding wire according to this embodiment has a total of 80 to 500 at.s of one or more of B, P, Ca, La, and Se.
- the concentration is 80 at. If it is less than ppm, the effect of improving the straightness of the loop cannot be obtained.
- the concentration is 500 at. If it exceeds ppm, the ball becomes hard and chip damage at the time of joining becomes a problem, so it is not suitable for practical use.
- the concentration of B, P, Ca, La and Se contained in the bonding wire can be measured using an inductively coupled plasma (ICP) emission spectroscopic analyzer.
- ICP inductively coupled plasma
- the Ag alloy used for the core material of the bonding wire can be manufactured by simultaneously melting the raw materials.
- an arc heating furnace, a high-frequency heating furnace, a resistance heating furnace, or the like can be used.
- the procedure is as follows. A raw material is loaded into a carbon crucible processed into a cylindrical shape having a diameter of 3 to 6 mm, and dissolved in a vacuum or in an inert atmosphere such as N 2 and Ar gas to 1100 to 1500 ° C. It is completed by performing furnace cooling or air cooling.
- the obtained Ag alloy is formed to the final wire diameter by repeatedly performing a drawing process using a die.
- the coating layer can be formed by a method of forming a coating film on the Ag alloy wire having the final wire diameter, or after forming the coating film on the Ag alloy wire having a large intermediate wire diameter and then drawing the final wire. A method of reaching the diameter can be used.
- quality control is simple, and when drawing after forming the film with the latter intermediate wire diameter, the adhesion with the core material is improved. It is advantageous.
- Each manufacturing method will be specifically described.
- a plating method As a method of forming a Pd, Pt film on the surface of the Ag alloy, a plating method, a vapor deposition method, a melting method, or the like can be used.
- the plating method can be manufactured by either an electrolytic plating method or an electroless plating method. In electroplating called strike plating or flash plating, the plating rate is high and the adhesion to the substrate is good. Solutions used for electroless plating are classified into substitutional type and reduction type. When the film thickness is thin, substitutional plating alone is sufficient, but when forming a thick film, reduction type is used after substitutional plating. It is effective to apply plating step by step.
- vapor deposition method physical adsorption such as sputtering, ion plating, and vacuum deposition, and chemical adsorption such as plasma CVD (Chemical Vapor Deposition) can be used. Since both are dry, there is no need for cleaning after the coating layer is formed, and there is no concern about surface contamination during cleaning.
- plasma CVD Chemical Vapor Deposition
- a method for forming a film on the Ag alloy wire having the final wire diameter will be described.
- a cylindrical Ag alloy having a diameter of 3 to 6 mm obtained by melting is drawn to form a diameter of 0.9 to 1.2 mm.
- a wire having a diameter of 300 to 600 ⁇ m is produced by continuously drawing using a die.
- oxides and sulfides on the surface can be removed, which is effective in improving quality.
- wire drawing is repeated to form the final wire diameter of ⁇ 15 to 25 ⁇ m.
- a commercially available lubricant is used for wire drawing, and the wire feed speed during wire drawing is 300 to 1000 m / min.
- a film containing one or more of Pd and Pt of 0.010 to 0.140 ⁇ m or one or more of Pd and Pt and Ag is formed on the surface of the Ag alloy wire.
- a method of performing a final heat treatment after forming the film is effective.
- the final heat treatment condition needs to be set to a condition that allows the thickness of the coating layer to be controlled within an appropriate range. Specifically, it is effective to control the final heat treatment temperature to 200 to 600 ° C. and the heat treatment time to be in the range of 0.2 to 1.0 seconds.
- the elements of the coating formed on the surface of the Ag alloy wire and the Ag alloy wire are mutually diffused, and the thickness of the coating layer can be controlled in the range of 0.005 to 0.070 ⁇ m. Further, if this final heat treatment condition is used, since the work-hardened Ag alloy can be recrystallized, the softening required for the bonding wire can be realized at the same time.
- a method will be described in which a film is formed on an Ag alloy wire having a large intermediate wire diameter and then drawn to reach the final wire diameter.
- a cylindrical Ag alloy having a diameter of 3 to 6 mm obtained by melting is drawn to form a diameter of 0.9 to 1.2 mm.
- a wire having a diameter of 300 to 600 ⁇ m is produced by continuously drawing using a die.
- a film containing Ag and one or more of Pd and Pt, or one or more of Pd and Pt is formed.
- the thickness of the film needs to be changed according to the diameter of the Ag alloy wire and the final diameter of the bonding wire at the time of forming the film.
- the film thickness may be adjusted to 0.010 to 0.140 ⁇ m at the final wire diameter.
- the wire diameter of the Ag alloy wire at the time of forming the coating is R 1
- the thickness of the coating is r 1
- the wire diameter of the Ag alloy wire at the final wire diameter is R 2
- Expression (3) can be expressed by the following Expression (4). 0.010 ⁇ (R / R 1 ) r 1 ⁇ 0.140 (4)
- the thickness of the film By determining the wire diameter for forming the film and the final wire diameter from Equation (4), it is possible to determine the thickness of the film to be formed at a wire diameter of ⁇ 300 to 600 ⁇ m. Thereafter, wire drawing is repeated to form the final wire diameter of ⁇ 15 to 25 ⁇ m, and final heat treatment is performed. When the final heat treatment is performed while continuously sweeping the wire, high productivity is obtained, which is effective.
- the final heat treatment condition needs to be set to a condition that allows the thickness of the coating layer to be controlled within an appropriate range. Specifically, it is effective to control the final heat treatment temperature to 200 to 600 ° C. and the heat treatment time to be in the range of 0.2 to 1.0 seconds. It is possible to control the thickness of the coating layer in the range of 0.005 to 0.070 ⁇ m by the mutual diffusion of the elements of the coating formed on the surface of the Ag alloy wire and the Ag alloy wire.
- Alloy layer In order to form an alloy layer between the core material and the coating layer, it is effective to perform an additional heat treatment after the final heat treatment. This promotes diffusion of Ga, In and Sn contained in the Ag alloy to the coating layer side. It is effective to change the heat treatment time when the additional heat treatment condition is 600 to 700 ° C. and the thickness of the alloy layer is controlled. By setting the heat treatment time to 0.2 to 0.5 seconds within the above heat treatment temperature range, the thickness of the alloy layer can be in the range of 10 to 60% with respect to the thickness of the coating layer. As a method for the additional heat treatment, a method in which the wire is continuously swept can be used.
- the thickness and composition can be controlled by the same method as the method for forming the coating layer. That is, a method of forming the Au film after forming the coating layer at the stage of processing to the intermediate wire diameter, and a method of forming the Au film after forming the coating layer at the stage of processing to the final wire diameter can be used. For example, when an Au film is formed after forming a coating layer on an Ag alloy wire having a final wire diameter, a method of performing a final heat treatment after forming an Au film of 0.0008 to 0.04 ⁇ m is effective.
- a bonding wire was produced according to the above manufacturing method.
- Ag as a raw material has a purity of 99.99 at. % Or more, with the balance being inevitable impurities.
- Ga, In, Sn, Cu, Pd, Pt, Au, B, P, Ca, La and Se have a purity of 99.9 at. % Or more and the balance is made of inevitable impurities.
- 10 at. Elements with a concentration of ppm or less are unavoidable impurities.
- an electrolytic plating method was used as a method for forming a Pd, Pt film on the surface of the Ag alloy.
- the wire was immersed in the plating solution while continuously sweeping.
- the electrolytic plating method was also used for forming the Au-containing region on the outermost surface of the coating layer. Also in this case, the wire was immersed in the plating solution while continuously sweeping.
- the bonding life after the high temperature and high humidity test was evaluated under the conditions of a temperature of 130 ° C., a relative humidity of 85%, and a bias voltage of 3.6V.
- the sample was manufactured by bonding a bonding wire to a semiconductor element using a commercially available bonding apparatus and molding with an epoxy-based sealing resin.
- An Al electrode having a thickness of 1 ⁇ m was used as the electrode of the semiconductor element.
- the joint life was a time at which a shear test of the ball joint was carried out every 24 hours and the value of the shear strength was 1/3 of the shear strength obtained in the initial stage.
- the shear test after the high-temperature and high-humidity test was conducted after removing the resin by acid treatment and exposing the ball joint.
- As the shear tester a commercially available micro strength tester was used.
- As the value of the shear strength an average value of 10 measured values of randomly selected ball joints was used. In the above evaluation, if the bonding life is less than 120 hours, it is judged that there is a problem in practical use, and if it is ⁇ , and if it is 120 hours or more and less than 168 hours, it is judged that there is no problem in practical use. It was marked as ⁇ .
- Wedge bonding was performed on a device having a structure in which a plurality of semiconductor elements were laminated using a bonding wire having a wire diameter of ⁇ 15 to 20 ⁇ m.
- the bonding temperatures were 175 ° C., 160 ° C., and 150 ° C.
- the lead-side electrode material was Ag.
- the joining conditions were low energy conditions where the output of ultrasonic waves was lower than normal conditions. With respect to the sample after joining, 1000 wedge joints were observed, and pass / fail was judged by whether or not a defect occurred.
- the defect is defined as a state in which the bonding wire is peeled off from the electrode.
- Ball formation was evaluated by forming a ball using a commercially available bonding apparatus and observing its appearance.
- the ball formation conditions were N 2 + 5% H 2 gas.
- the diameter of the ball was 1.5 times the wire diameter.
- An optical microscope was used to observe the appearance of the balls.
- the ball forming property was determined based on the number of balls having inferior sphericity among 200 randomly selected balls based on the above evaluation method. If the number of balls having inferior sphericity was 3 or 4, it was judged that there was no problem in practical use.
- the capillary life was evaluated by observing the capillary after bonding the bonding wire using a commercially available bonding apparatus, and determining the presence or absence of wear.
- the wire diameter of the bonding wire was 20 ⁇ m and the number of bonding trials was 5000 times. Observe the hole at the tip of the capillary using an SEM, and if it can be used without any problem even if it deviates from a perfect circle due to wear, it is judged that there is no practical problem. Judged to be excellent and marked as ⁇ .
- the pressure bonding shape of the ball was evaluated by performing ball bonding on an electrode obtained by forming a 1.0 ⁇ m thick Al film on a Si substrate using a commercially available wire bonder, and observing with an optical microscope from directly above.
- the collapsed shape of the ball was determined to be good if the collapsed shape was close to a circle, and was determined to be defective if it was an elliptical or petal-shaped shape. Observe 100 ball joints with an optical microscope. If there are 1 to 4 defects, it is judged that there is no problem in practical use. Indicated.
- loop formation For loop formation, bonding was performed using a commercially available wire bonder, and the loop portion was observed to evaluate whether or not the loops were in contact with each other.
- the loop length was 2.5 mm and the loop height was 0.2 mm.
- the loop portion of the 200 bonded bonding wires was observed with an optical microscope, and if there was a portion where the adjacent bonding wires contacted, it was determined to be defective. If there were 1 to 4 defects, it was judged that there was no problem in practical use, and it was judged that it was particularly excellent if no defect occurred at all.
- Table 1 shows examples in which characteristics such as the composition of the bonding wire according to the present invention and evaluation results of each bonding wire are described.
- Table 2 shows a comparative example.
- the bonding wire according to the first claim is No. 1, 2, 17 to 24, 45, 50 to 52, 56, 62 to 66, 70 to 72, 76 to 84. It was confirmed that the ball bond reliability and wedge bondability required for memory bonding wires can be satisfied.
- the bonding wires according to Examples 1 to 84 have a total amount of at least one of Ga, In, and Sn of 0.1 to 3.0 at. And a balance containing Ag and inevitable impurities, and one or more of Pd and Pt, or one or more of Pd and Pt and Ag formed on the surface of the core, and the balance And a coating layer made of inevitable impurities, and the thickness of the coating layer is 0.005 to 0.070 ⁇ m. Therefore, it was confirmed that the ball joint reliability and the wedge jointability were satisfied at the same time. In contrast, No. of the comparative example. As shown in 1 to 14, when the Ga, In, Sn concentration is outside the above range, or the coating layer thickness is outside the above range, the ball joint reliability and the wedge joint property must be satisfied at the same time. I confirmed that I could not.
- the bonding wires according to Examples 3 to 6, 8, 10 to 15, 17, 19, 20, 22 to 32, 35, 36, 38 to 65, 67 to 80, and 82 to 84 have an alloy layer thickness of Since it was 10 to 60% of the thickness of the coating layer, it was confirmed that the ball forming property was excellent.
- the bonding wires according to Examples 26, 27, 30, and 31 are made of 15 to 50 at. It was confirmed that the capillary life can be improved since the thickness of the Au-containing region containing 1% is 0.001 to 0.050 ⁇ m.
- the bonding wires according to Examples 33 to 44, 46 to 50, and 57 to 60 have a total of 0.1 to 0.7 at. At least one of Cu, Pd, Pt, and Au as a core material. %, It was confirmed that the evaluation of the ball pressure bonding shape was particularly excellent.
- the bonding wires according to Examples 3, 4, 9 to 16, 34 to 38, 48, 49, 54, 55, 68, 69, 74, and 75 are composed of B, P, Ca, La, and Se as a whole.
Abstract
Description
本発明者らは、鋭意検討した結果、ボール接合信頼性およびウェッジ接合性を同時に満足するためには、芯材に添加する元素と濃度、被覆層に用いる元素と被覆層の膜厚を適切に制御する必要があることを見出した。
次に、本実施形態に係るボンディングワイヤのボール形成性の改善に対する有効性を説明する。本実施形態に係るボンディングワイヤは、芯材と被覆層の間にGa,In及びSnの1種以上と、Pd及びPtの1種以上と、Agとを含み、残部が不可避不純物からなる合金層を有することにより、直径が小さいボール(以下、小径ボールという)において、真球性が低いボール(以下、異形ボールという)の発生を抑制することができる。小径ボールとは、直径がボンディングワイヤの線径の1.5~1.7倍のボールと定義する。通常、ボールの直径はボンディングワイヤの線径の1.7~2.5倍の範囲である。
次に、本実施形態に係るボンディングワイヤのキャピラリ寿命に対する有効性を説明する。本実施形態に係るボンディングワイヤは、被覆層の最表面にAuを15~50at.%以上含むAu含有領域を有することでボンディングワイヤの表面とキャピラリの摩擦を低減し、キャピラリの使用寿命を改善するができる。これはAuが被覆層のPd及びPtよりも軟質であり延性にも優れることによる。Au含有領域の厚さが、0.001~0.050μmであれば、優れた改善効果が得られるため、有効である。Auの濃度が15at.%未満あるいは該厚さが0.050μm未満では、改善効果が不十分である。Auの濃度が50at.%超又はAu含有領域の厚さが0.050μm超では、Auがキャピラリに詰まることがあり、キャピラリ寿命の改善効果は得られない。Au含有領域の厚さおよび組成は、オージェ電子分光分析装置を用いて測定することができる。具体的な方法は被覆層の組成と同様の方法で測定することができる。
次に、本実施形態に係るボンディングワイヤのボール圧着形状に対する有効性を説明する。メモリパッケージの小型化に伴い、半導体素子の電極間の距離が短くなっている。従来、Agボンディングワイヤのボール接合時には、ボールが超音波の印加方向に優先的に変形するため、隣接する電極に接触し短絡を引起こすことがあった。したがって、ボール接合においてボール変形の異方性を低減し、真円に近いつぶれ形状に制御する必要がある。ボール変形の異方性は結晶粒径が大きいほど増加する傾向があるため、ボール部の結晶粒を微細化する技術が有効である。本実施形態に係るボンディングワイヤは、前記芯材にさらにCu,Pd,Pt及びAuの1種以上を総計で0.1~0.7at.%含むことで、ボールの結晶粒を微細化し、より真円に近いボール形状を得ることが可能となる。ここで、上記濃度が0.1at.%未満では、ボール形状の改善効果は得られない。また、上記濃度が0.7at.%超では、ボールが硬質化し、接合時のチップ損傷が問題となるため実用に適さない。ボンディングワイヤの芯材に含まれるPd,Pt及びAuの濃度は、芯材の部分をAES、SEMもしくはTEMに備え付けたEDX装置などを用いて測定することができる。芯材を露出させる方法は、ボンディングワイヤを樹脂に埋込み、機械研磨によって断面を露出させる方法やボンディングワイヤの表面をArイオンビームによって削る方法が使用できる。
次に、本実施形態に係るボンディングワイヤのループ形成性に対する有効性を説明する。本実施形態に係る芯材と被覆層と合金層を含むボンディングワイヤは、ボンディングワイヤにB,P,Ca,La及びSeの1種以上を総計で80~500at.ppm含むことにより、ループの直進性を改善することができる。近年のメモリパッケージの小型化に伴い、リード側の電極の狭ピッチ化し、ボンディングワイヤ同士の接合間隔も狭くなっている。ボンディングワイヤには、ワイヤ同士の接触による短絡を防ぐため、高い直進性が求められている。本実施形態に係るボンディングワイヤは、B,P,Ca,La及びSeの1種以上を総計で80~500at.ppm含むことで曲げ強度を向上させることが可能となり、高いループの直進性が得られる。ここで、上記濃度が80at.ppm未満では、ループの直進性の改善効果は得られない。また、上記濃度が500at.ppm超では、ボールが硬質化し、接合時のチップ損傷が問題となるため実用に適さない。ボンディングワイヤに含まれるB,P,Ca,La及びSeの濃度は、誘導結合プラズマ(ICP:Inductively Coupled Plasma)発光分光分析装置を用いて測定することができる。
次に、上記実施形態に係るボンディングワイヤの製造方法を説明する。
ボンディングワイヤの芯材に用いるAg合金は、原料を同時に溶解することによって製造できる。溶解には、アーク加熱炉、高周波加熱炉、抵抗加熱炉等を利用することができる。その手順は、直径がφ3~6mmの円柱型に加工したカーボンるつぼに原料を装填し、真空中もしくはN2及びArガス等の不活性雰囲気で1100~1500℃まで加熱して溶解させた後、炉冷もしくは空冷を行うことで完了する。得られたAg合金は、ダイスを用いた引抜加工を繰り返し行うことで最終線径まで成形する。
被覆層を形成する方法は、最終線径のAg合金線に被覆層となる皮膜を形成する手法、あるいは、中間線径の太いAg合金線に上記皮膜を形成した後に、伸線して最終線径に到達する手法等を用いることができる。前者の最終線径で皮膜を形成する場合には、品質管理が簡便であり、後者の中間線径で皮膜を形成後に伸線を行う場合には、芯材との密着性を向上させるのに有利である。それぞれの製造方法について具体的に説明する。
r2=(R2/R1)r1…(1)
0.010≦r2<0.140…(2)
(1)、(2)式より
0.010≦(R2/R1)r1<0.140…(3)
0.010≦(R/R1)r1<0.140…(4)
芯材と被覆層の間に合金層を形成するためには、最終熱処理後に追加熱処理をすることが有効である。これによりAg合金に含まれるGa,In及びSnの被覆層側への拡散が促進される。追加熱処理条件は、600~700℃とし、合金層の厚さを制御する場合には、熱処理時間を変えることが有効である。上記熱処理温度範囲で、熱処理時間を0.2~0.5秒とすることで、前記合金層の厚さが被覆層の厚さに対して10~60%の範囲にすることができる。追加熱処理の方法はワイヤを連続的に掃引しながら行う方法を用いることができる。
被覆層の最表面にAu含有領域を設ける場合も、被覆層の形成方法と同様の方法を利用することができる。またその厚さや組成の制御も被覆層の形成方法と同様の方法を用いることができる。すなわち、中間線径まで加工した段階で被覆層を形成した後にAu皮膜を形成する方法、最終線径まで加工した段階で被覆層を形成した後にAu皮膜を形成する方法が利用できる。例えば、最終線径のAg合金線に被覆層を形成した後にAu皮膜を形成する場合、0.0008~0.04μmのAu皮膜を形成した後、最終熱処理を行う方法等が有効である。
ボール接合信頼性は、温度が130℃、相対湿度が85%、バイアス電圧が3.6Vの条件で高温高湿試験後の接合寿命を評価した。サンプルは、市販の接合装置によって半導体素子にボンディングワイヤを接合し、エポキシ系の封止樹脂でモールドして作製した。半導体素子の電極には厚さ1μmのAl電極を用いた。接合寿命は、24時間毎にボール接合部のシェア試験を実施し、シェア強度の値が初期に得られたシェア強度の1/3となる時間とした。高温高湿試験後のシェア試験は、酸処理によって樹脂を除去して、ボール接合部を露出させてから行った。シェア試験機は市販の微小強度試験機を用いた。シェア強度の値は無作為に選択したボール接合部の10か所の測定値の平均値を用いた。上記の評価において、接合寿命が120時間未満であれば実用上問題があると判断し△印、120時間以上168時間未満であれば、実用上問題ないと判断し○印、168時間以上であれば優れていると判断し◎印と表記した。
複数の半導体素子が積層された構造を有するデバイスに対して、線径がφ15~20μmのボンディングワイヤを用いてウェッジ接合を行った。接合時の温度は175℃、160℃、150℃とし、リード側の電極材料はAgを用いた。接合条件は、通常の条件よりも超音波の出力を下げた低エネルギー条件とした。接合後のサンプルに対して、1000箇所のウェッジ接合部の観察を行い、不良が発生したか否かで合否を判定した。ここで、不良とはボンディングワイヤが電極から剥離した状態と定義する。175℃でのウェッジ接合において不良が発生すれば実用上問題があると判断し△印、不良が発生しなければ実用上問題がないと判断し○印と表記した。160℃でのウェッジ接合において不良が発生しなければ優れていると判断し◎印、150℃でのウェッジ接合において不良が発生しなければ、特に優れていると判断し☆印と表記した。
ボール形成性は、市販の接合装置を用いてボールを形成し、その外観観察を行い評価した。ボールの形成条件は、N2+5%H2ガスとした。ボールの直径はワイヤ線径の1.5倍とした。ボールの外観観察には光学顕微鏡を用いた。ボール形成性は、上記の評価方法に基づいて、無作為に選んだ200個のボールのうち真球性が劣るボールの数によって判定した。真球性が劣るボールの数が3,4個であれば実用上問題がないと判断し○印、2個以下であれば優れていると判断し◎印と表記した。
キャピラリ寿命の評価は、市販の接合装置を用いてボンディングワイヤを接合後、キャピラリの観察を行い、摩耗の有無によって判定した。ボンディングワイヤの線径は20μm、接合の試行回数は5000回とした。キャピラリの先端の穴をSEMを用いて観察し、摩耗によって真円形状からずれていても問題なく使用可能であれば実用上問題がないと判断し○印、真円形状を維持していれば優れていると判断し◎印と表記した。
ボールの圧着形状は、Si基板に厚さ1.0μmのAl膜を成膜した電極に、市販のワイヤボンダーを用いてボール接合を行い、直上から光学顕微鏡で観察し、評価した。ボールのつぶれ形状の判定は、つぶれ形状が円形に近いのであれば良好と判定し、楕円形や花弁状の形状であれば不良と判定した。100箇所のボール接合部を光学顕微鏡で観察し、不良が1~4個であれば実用上問題がないと判断し○印、不良が全く発生しなければ特に優れていると判断し◎印と表記した。
ループ形成性は、市販のワイヤボンダーを用いて接合を行い、ループ部分を観察してループ同士が接触しているか否かを評価した。ループ長さは2.5mm、ループ高さは0.2mmとした。接合した200本のボンディングワイヤのループ部分を光学顕微鏡で観察し、隣接するボンディングワイヤが接触した箇所があれば不良と判定した。不良が1~4箇所であれば実用上問題がないと判断し○印、不良が全く発生しなければ特に優れていると判断し◎印と表記した。
Claims (6)
- Ga,In及びSnの1種以上を総計で0.1~3.0at.%含み、残部がAgおよび不可避不純物からなる芯材と、
前記芯材の表面に形成された、Pd及びPtの1種以上、又は、Pd及びPtの1種以上とAg、を含み、残部が不可避不純物からなる被覆層と
を備え、前記被覆層の厚さが0.005~0.070μmであることを特徴とする半導体装置用ボンディングワイヤ。 - 前記芯材と前記被覆層の間に、Ga,In及びSnの1種以上と、Pd及びPtの1種以上と、Agとを含み、残部が不可避不純物からなる合金層を備えることを特徴とする請求項1記載の半導体装置用ボンディングワイヤ。
- 前記合金層の厚さが、前記被覆層の厚さに対して、10~60%であることを特徴とする請求項2記載の半導体装置用ボンディングワイヤ。
- 前記被覆層の最表面にAuを15~50at.%含むAu含有領域を有し、前記Au含有領域の厚さが0.001~0.050μmであることを特徴とする請求項3記載の半導体装置用ボンディングワイヤ。
- さらに前記芯材にCu,Pd,Pt及びAuの1種以上を総計で0.1~0.7at.%含むことを特徴とする請求項1~3のいずれか1項記載の半導体装置用ボンディングワイヤ。
- さらにワイヤ全体として、B,P,Ca,La,及びSeの1種以上を総計で80~500at.ppm含むことを特徴とする請求項1~3、及び5のいずれか1項記載の半導体装置用ボンディングワイヤ。
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JP2001176912A (ja) * | 1999-12-16 | 2001-06-29 | Noge Denki Kogyo:Kk | 金被覆した銀線ボンディングワイヤ |
JP2007123597A (ja) * | 2005-10-28 | 2007-05-17 | Nippon Steel Materials Co Ltd | 半導体装置用ボンディングワイヤ |
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JP7142761B1 (ja) | 2021-12-13 | 2022-09-27 | タツタ電線株式会社 | ボンディングワイヤ及び半導体装置 |
WO2023112444A1 (ja) * | 2021-12-13 | 2023-06-22 | タツタ電線株式会社 | ボンディングワイヤ及び半導体装置 |
JP2023087547A (ja) * | 2021-12-13 | 2023-06-23 | タツタ電線株式会社 | ボンディングワイヤ及び半導体装置 |
Also Published As
Publication number | Publication date |
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US10840208B2 (en) | 2020-11-17 |
KR102459273B1 (ko) | 2022-10-25 |
CN107004613A (zh) | 2017-08-01 |
JP6516465B2 (ja) | 2019-05-22 |
EP3236490A1 (en) | 2017-10-25 |
CN107004613B (zh) | 2020-05-08 |
EP3236490B1 (en) | 2023-10-11 |
SG11201704914QA (en) | 2017-07-28 |
EP3236490A4 (en) | 2018-08-29 |
US20170365576A1 (en) | 2017-12-21 |
JP2016115875A (ja) | 2016-06-23 |
KR20170095317A (ko) | 2017-08-22 |
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