JPH0479245A - 半導体素子用ボンディング線 - Google Patents

半導体素子用ボンディング線

Info

Publication number
JPH0479245A
JPH0479245A JP2192801A JP19280190A JPH0479245A JP H0479245 A JPH0479245 A JP H0479245A JP 2192801 A JP2192801 A JP 2192801A JP 19280190 A JP19280190 A JP 19280190A JP H0479245 A JPH0479245 A JP H0479245A
Authority
JP
Japan
Prior art keywords
alloy
wire
neck part
strength
busbar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2192801A
Other languages
English (en)
Inventor
Katsuyuki Toyofuku
豊福　克之
Ichiro Nagamatsu
永松　一郎
Shinji Shirakawa
白川　信次
Sukehito Iga
祐人 伊賀
Takeshi Kujiraoka
鯨岡　毅
Norimasa Murakami
村上　憲正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP2192801A priority Critical patent/JPH0479245A/ja
Priority to US07/729,226 priority patent/US5364706A/en
Priority to MYPI91001293A priority patent/MY107874A/en
Priority to GB9115519A priority patent/GB2248416B/en
Publication of JPH0479245A publication Critical patent/JPH0479245A/ja
Pending legal-status Critical Current

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は半導体素子のチップ電極と外部リードとを接続
するために用いられる半導体素子用ボンディング線、特
にボールボンディング法に好適なものに関する。
〈従来の技術〉 従来、この種の半導体素子用ボンディング線として例え
ばキャピラリーの先端から垂下したＡｕ線の先端を電気
トーチにより溶融させてボールを形成し、このボールを
半導体素子のチップ電極に圧着して接着せしめ、その後
ループ状に外部リードまで導いて該外部リードに圧着・
切断することにより、チップ電極と外部リードを接続さ
せたものがある。
〈発明が解決しようとする課題〉 しかし乍ら、このような従来の半導体素子用ボンディン
グ線ではボール形成時にこのボール直上のネック部が熱
影響を受けて線材中に蓄積された応力が緩和されるため
、熱影響を受けない母線に比べ機械的強さが低下し、そ
の結果ボンディング作業中にネック部が破断したりワイ
ヤ倒れやワイヤ垂れが発生すると共に、製品の温度サイ
クル寿命試験において繰り返し温度変化により熱膨張・
収縮して発生する応力がネック部に集中し、ネック部の
破断が発生し易いという問題がある。
一方、近年ＬＳＩの高密度実装化に伴って多ピン化傾向
が強まる中、ボンディング線を細線化してボンディング
ピッチを短縮することが要求されている。
しかし、前述のボンディング線ではネック部が破断し易
いためにその線径を細くすることができず、上記要求を
満足し得ないという問題もある。
本発明は斯る従来事情に鑑み、ネック部の強さを母線と
同等以上にすることを目的とする。
〈課題を解決するための手段〉 上記課題を解決するために本発明が講する技術的手段は
、高純度Ａｇ又はＡｇ合金からなる芯線の外周面に高純
度Ｐ１又はＰｔ合金らなる被覆材を被覆したことを特徴
とするものである。
そして、高純度Ａｇとは不可避不純物を含む９９．９９
％以上のものを用い、Ａｇ合金とは高純度ＡｇにＡｌｌ
、　Ｐｄ　Ｃ２０ａｊ％以下）　、Ｃｕ、　　Ｉｎ、　
Ｍｇ、　　Ｙ　（５ａｔ％以下）　、Ｂｅ、　Ｃａ、　
Ｌａ、　２ｒ　（ｌａｔ％以下）や母材の融点より低い
沸点を有する低沸点元素等の中から選ばれる一種又は二
種以上含有させたものを用い、Ａｇ合金とすることによ
り常温及び高温での機械的強さを向上させて高速ボンデ
ィングを可能にすると共に、ボール形成時におけるネッ
ク部の結晶粒粗大化を防止している。
また、高純度Ｐｔとは不可避不純物を含む９９．９５％
以上のものを用い、［’を合金とは高純度ＰｆにＰｄ（
８ａ１％以下）　、Ａｕ　（２ａｔ％以下）　、Ｂｅ、
　Ｃｕ、　ＭＯ（５ａ（％以下）　、Ｃａ、　Ｉｎ　（
ｌａｔ％以下）や母材の融点より低い沸点を有する低沸
点元素等の中から選ばれる一種又は二種以上含有させた
ものを用い、Ｐｔ合金とすることにより常温及び高温で
の機械的強さを向上させて高速ボンディングを可能にす
ると共に、ボール形成時におけるネック部の結晶粒粗大
化を防止している。
〈作用〉 本発明は上記技術的手段によれば、ボール形成時にネッ
ク部が熱影響を受けて該ネック部の芯線の外周部分と被
覆材の内周部分とが相互拡散することにより、Ａｇ−Ｐ
ｔ合金からなる拡散層を形成してネック部の強度が拡散
層のない母線に比べ向上するものである。
〈実施例〉 以下、具体的な実施例について説明する。
各試料は高純度Ｐ１又はＰｔ合金らなる被覆材１を高純
度Ａｇ又はＡｇ合金からなる芯線２にクラッドし、次に
線引き加工を施し、その途中で焼なまし処理を施した後
に線引加工で線径３０μの母線に成形し、更に応力除去
を行ったものであり、図示せる如く上記被覆材１の外径
をＤ工、芯線２の外径をＤ２としてこれら両者の径比Ｄ
２／Ｄ工％を変えている。
各試料の径比Ｄ　２　／　Ｄ□％は次表に示す通りであ
って、その試料Ｎα１〜１０は高純度Ｐｔの被覆材１を
高純度Ａｇの芯線２にクラッドした実施品、試料Ｎ１１
ｌｌ〜１２は高純度ＰｔにＡｕを２ａｊ％含有させた被
覆材１を高純度Ａｇの芯線２にクラッドした実施品、試
料阻１３は高純度ｐｔの被覆材１を高純度ＡｇにＡｕを
５ａｊ％含有させた芯線２にクラッドした実施品、試料
Ｎ［Ｌｉ２は高純度Ｐｉ又はＰｔ合金の被覆材１及び高
純度Ａｇ又はＡｇ合金の芯線２のどちらか一方か或いは
両方にこれら母材の融点より低い沸点を有する低沸点元
素を含有させてクラッドした実施品、試料Ｎα１５は従
来の半導体素子用ボンディング線の一例を示す比較界で
ある。
本実施例の場合には試料鬼１４として高純度ｐｔの被覆
材１を高純度ＡｇにＰを５Ｈａｔｐｐｍ含有させた芯線
２にクラッドしたものを例示し、これにより、ボール形
成時においてボール中の低沸点元素が蒸発飛散して、金
属特有のガス吸収を防いで接合に良好なボールが得られ
ると共に、ネック部中の低沸点元素は蒸発できないが気
化しようとして応力を発生し、これに伴ってボンディン
グ後のネック部の破断強度が応力の発生しない母線に比
べ向上させている。
また、試料Ｎα１５として高純度Ａｕ　（９９，９９％
）からなるＡｕ線を例示している。
上記試料によってプルテストを所定回数（ｎ＝４０）宛
行い、夫々のプル強度及びネック部以外の母線部分で破
断した回数と、チップ割れの有無を測定した結果を次表
に示す。
尚、各実施例の中でＣモード破断の数及びチップ割れの
有無に基づき３ランクに区別し、チップ割れがなくしか
もＣモード破断の数が多いものから少ないものへ順に◎
、○、×と判定した。
この測定結果により本発明の各実施品はＣモード破断の
数が比較品に比べて明らかに多いことからネック部がそ
れ以外の母線部分より強いことが判り、更に１５≦Ｄ　
２　／　Ｄ□≦２５及び９５≦Ｄ２／Ｄ工≦９９の範囲
の実施品がネック部の強度とボール形成時のボール硬さ
に優れることが理解され、更に被覆材１の材質をＰｔ合
金するか又は芯線２の材質をＡｇ合金とするか、或いは
低沸点元素を含有させることにより最適になることが理
解される。
〈発明の効果〉 本発明は上記の構成であるから、以下の利点を有する。
■　ボール形成時にネック部が熱影響を受けて該ネック
部の芯線の外周部分と被覆材の内周部分とが相互拡散す
ることにより、Ａｇ−Ｐｔ合金らなる拡散層を形成して
ネック部の強度が拡散層のない母線に比べ向上するので
、ネック部の強さを母線と同等以上にすることができる
。
従って、ボール形成時にネック部が熱影響を受けて母線
より弱くなる従来のものに比べ、ボンディング作業中の
ネック部の破断やワイヤ倒れ、ワイヤ垂れが発生しない
と共に、製品の温度サイクル寿命試験において繰り返し
温度変化により発生する応力が母線全体に分散して吸収
され、ボンディング線の破断の最頻発生部位であるネッ
ク部の破断は劇的に減少し、信頼性が向上する。
■　ネック部が破断し難（なるので、ボンディング線の
線径を微細化でき、これに伴いボンディングピッチの短
縮化が可能となり、ＬＳＩの高密度実装が図れる。
【図面の簡単な説明】
図面は本発明の一実施例を示す半導体素子用ボンディン
グ線の拡大縦断面図である。

Claims (1)

    【特許請求の範囲】
  1. 　高純度Ａｇ又はＡｇ合金からなる芯線の外周面に高純
    度Ｐｔ又はＰｔ合金からなる被覆材を被覆したことを特
    徴とする半導体素子用ボンディング線。
JP2192801A 1990-07-20 1990-07-20 半導体素子用ボンディング線 Pending JPH0479245A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2192801A JPH0479245A (ja) 1990-07-20 1990-07-20 半導体素子用ボンディング線
US07/729,226 US5364706A (en) 1990-07-20 1991-07-12 Clad bonding wire for semiconductor device
MYPI91001293A MY107874A (en) 1990-07-20 1991-07-18 Clad bonding wire for semiconductor device.
GB9115519A GB2248416B (en) 1990-07-20 1991-07-18 Clad bonding wire for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2192801A JPH0479245A (ja) 1990-07-20 1990-07-20 半導体素子用ボンディング線

Publications (1)

Publication Number Publication Date
JPH0479245A true JPH0479245A (ja) 1992-03-12

Family

ID=16297218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2192801A Pending JPH0479245A (ja) 1990-07-20 1990-07-20 半導体素子用ボンディング線

Country Status (1)

Country Link
JP (1) JPH0479245A (ja)

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JP2016115875A (ja) * 2014-12-17 2016-06-23 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
JP6207793B1 (ja) * 2016-04-28 2017-10-04 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
JP2017212457A (ja) * 2016-04-28 2017-11-30 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016115875A (ja) * 2014-12-17 2016-06-23 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
KR20170095317A (ko) * 2014-12-17 2017-08-22 신닛테츠스미킹 마테리알즈 가부시키가이샤 반도체 장치용 본딩 와이어
US20170365576A1 (en) * 2014-12-17 2017-12-21 Nippon Steel & Sumikin Materials Co., Ltd. Bonding wire for semiconductor device
US10840208B2 (en) 2014-12-17 2020-11-17 Nippon Steel Chemical & Material Co., Ltd Bonding wire for semiconductor device
JP6207793B1 (ja) * 2016-04-28 2017-10-04 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
JP2017212457A (ja) * 2016-04-28 2017-11-30 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
KR20180059951A (ko) * 2016-04-28 2018-06-05 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 반도체 장치용 본딩 와이어
KR20190020175A (ko) * 2016-04-28 2019-02-27 닛데쓰마이크로메탈가부시키가이샤 반도체 장치용 본딩 와이어
TWI657154B (zh) * 2016-04-28 2019-04-21 日商日鐵住金新材料股份有限公司 半導體裝置用接合線
US11342299B2 (en) 2016-04-28 2022-05-24 Nippon Micrometal Corporation Bonding wire for semiconductor devices

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