JP6807426B2 - 金被覆銀ボンディングワイヤとその製造方法、及び半導体装置とその製造方法 - Google Patents
金被覆銀ボンディングワイヤとその製造方法、及び半導体装置とその製造方法 Download PDFInfo
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- JP6807426B2 JP6807426B2 JP2019076471A JP2019076471A JP6807426B2 JP 6807426 B2 JP6807426 B2 JP 6807426B2 JP 2019076471 A JP2019076471 A JP 2019076471A JP 2019076471 A JP2019076471 A JP 2019076471A JP 6807426 B2 JP6807426 B2 JP 6807426B2
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- gold
- wire
- bonding wire
- ball
- coated silver
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- 239000010931 gold Substances 0.000 title claims description 282
- 229910052737 gold Inorganic materials 0.000 title claims description 271
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 title claims description 268
- 229910052709 silver Inorganic materials 0.000 title claims description 147
- 239000004332 silver Substances 0.000 title claims description 145
- 239000004065 semiconductor Substances 0.000 title claims description 94
- 238000004519 manufacturing process Methods 0.000 title description 23
- 239000011247 coating layer Substances 0.000 claims description 72
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 70
- 239000011162 core material Substances 0.000 claims description 61
- 125000004354 sulfur functional group Chemical group 0.000 claims description 45
- 239000011669 selenium Substances 0.000 claims description 21
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 20
- 229910052711 selenium Inorganic materials 0.000 claims description 20
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 20
- 229910052714 tellurium Inorganic materials 0.000 claims description 19
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 17
- 229910052717 sulfur Inorganic materials 0.000 claims description 17
- 239000011593 sulfur Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 description 50
- 150000002500 ions Chemical class 0.000 description 48
- 238000013508 migration Methods 0.000 description 48
- 230000005012 migration Effects 0.000 description 48
- 230000006835 compression Effects 0.000 description 42
- 238000007906 compression Methods 0.000 description 42
- 238000010438 heat treatment Methods 0.000 description 27
- 239000010410 layer Substances 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 18
- 238000004458 analytical method Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 14
- 238000007747 plating Methods 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- 229910001316 Ag alloy Inorganic materials 0.000 description 12
- 239000010944 silver (metal) Substances 0.000 description 12
- 238000009413 insulation Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 230000005684 electric field Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 238000005491 wire drawing Methods 0.000 description 10
- 239000000654 additive Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- 230000000996 additive effect Effects 0.000 description 8
- 238000007789 sealing Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000000470 constituent Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010891 electric arc Methods 0.000 description 4
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229910000898 sterling silver Inorganic materials 0.000 description 4
- 239000010934 sterling silver Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 210000001787 dendrite Anatomy 0.000 description 3
- 238000004453 electron probe microanalysis Methods 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 3
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000004445 quantitative analysis Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000011135 tin Substances 0.000 description 3
- 229910021642 ultra pure water Inorganic materials 0.000 description 3
- 239000012498 ultrapure water Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009749 continuous casting Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 241001026509 Kata Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000000724 energy-dispersive X-ray spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000349 field-emission scanning electron micrograph Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0652—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
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Description
図1及び図2に示すように、実施形態の金被覆銀ボンディングワイヤ1は、銀(Ag)を主成分とする芯材(銀芯材とも記す)2と、芯材2の表面に設けられ、金(Au)を主成分として含むと共に、硫黄(S)、セレン(Se)、及びテルル(Te)から選ばれる少なくとも1つの硫黄族元素を含む被覆層3とを有する。実施形態の金被覆銀ボンディングワイヤ1において、芯材2及び被覆層3の全体量(ワイヤ1の全体量)に対して、金は2質量%以上7質量%以下の範囲で含まれ、硫黄族元素は1質量ppm以上80質量ppm以下の範囲で含まれる。
次に、実施形態の金被覆銀ボンディングワイヤ1を用いた半導体装置について、図8ないし図11を参照して説明する。なお、図8は実施形態の半導体装置の樹脂封止する前の段階を示す断面図、図9は実施形態の半導体装置の樹脂封止した段階を示す断面図、図10は実施形態の半導体装置における半導体チップの電極に接合されたボール圧縮部を示す断面図、図11は図10に示すボール圧縮部を拡大して示す断面図である。
芯材として、連続鋳造で作製した純度99%の銀芯材を用意し、連続伸線を行って中間線径0.05mm〜1.0mmまで加工した。さらに、中間線径の銀線材に金被覆層を以下のようにして形成した。硫黄、セレン、テルル各々の添加剤を適量で添加した金電解めっき浴中に、銀線材を連続的に送線しながら浸漬した状態で、銀線材に電流密度0.20A/dm2以上1.0A/dm2以下で電流を流し、硫黄族元素を含む金被覆層を形成した。この後、最終線径のφ20μmまで伸線加工したワイヤに最終熱処理を施し、実施例1から実施例36の金被覆銀ボンディングワイヤを作製した。これらの金被覆銀ボンディングワイヤを後述する特性評価に供した。
Auめっき浴中に硫黄族元素の添加剤を添加しない以外は、実施例と同様にして、金被覆銀ボンディングワイヤを作製した。これらの金被覆銀ボンディングワイヤを後述する特性評価に供した。
被覆層中の硫黄族元素含有量が表1に示す値となるように調整したAuめっき浴を用いる以外は、実施例と同様にして、金被覆銀ボンディングワイヤを作製した。これらの金被覆銀ボンディングワイヤを後述する特性評価に供した。
金被覆銀ボンディングワイヤ中の金含有量及び硫黄族元素含有量は、前述した方法にしたがって測定した。その結果を表1に示す。
中間線径及び最終線径の金被覆銀ボンディングワイヤの外観をキーエンス社製のレーザー顕微鏡(商品名:VK−X200)を用いて、高倍率による金被膜の割れ(亀裂)の有無を確認した。主に伸線加工時に発生する引張応力により、金被膜に亀裂が発生して銀芯材の露出が10ワイヤ中1本でも見られた場合を「B」(不合格)、1本もみられなかった場合を「A」(合格)とした。その結果を表1に示す。
次に、作製した金被覆銀ボンディングワイヤを市販のワイヤボンディング装置(キューリックアンドソッファ社製、IConn PLUS)を用いて、FABの直径が36μmになるようEFO条件を設定し、大気中にてFABを形成した。その後、FABをFE−SEM/EDXによってネック部からの位置が各々50%、60%、70%である点D(点D1、点D2、点D3)、点E(点E1、点E2、点E3)の位置でライン分析した。各点のライン分析の結果、金濃度が金と銀の合計に対して8質量%未満であれば「B」(金濃化領域なし)、8質量%以上存在していれば、「A」(金濃化領域あり)とした。なお、結果はネック部からの形成範囲が同じとなる点(点D1、点E1)、(点D2、点E2)、(点D3、点E3)が共に条件を満たすことがイオンマイグレーションの解決に必要なことから、それぞれの点で共に条件を満たした場合のみ「A」(金濃化領域あり)と判定した。例えば、点D2、点E2共に判定がAの場合、金濃化領域の分析位置60%の判定は「A」とし、点D2、点E2の少なくともどちらか一方の判定がBの場合、金濃化領域の分析位置60%の判定は「B」とした。それらの結果を表1に示す。
作製した金被覆銀ボンディングワイヤを市販のワイヤボンディング装置(キューリックアンドソッファ社製、IConn PLUS)を用いて、FABの直径が36μmになるようEFO条件を設定し、大気中にてFABを形成した。その後、150℃に加熱した評価用Siチップ上のアルミニウム合金パッドに超音波併用熱圧着方式によるボールボンディング法により、圧着ボールの平均直径が45μmになる接合条件にて、第1次ボンディングをおこない、電解めっきを用いてNi上にAuめっきが施されたBGA基板のリード端子との間で超音波併用熱圧着方式によるステッチ方式ボンディング法により第2次ボンディングを所定の接合条件で行い、1チップあたり計32本のワイヤを結線した。結線されたワイヤは、チップ電極とリード端子との間を結線した2本のワイヤと1対のチップ電極で、計16回路が構成されている。これらの回路に対して、バイアスを印加することのできる専用の治具に装着することにより、マルチメーター等の電圧源から治具の端子を通してBGA基板上のリード端子から、最終的に結線された回路のボール圧縮部に電圧を印加した。このボール圧縮部は陽極あるいは陰極のいずれかに該当することになる。すなわち、1チップあたり陽極と陰極の対が8対形成される。陽極と陰極間はチップ内で絶縁されており、陽極及び陰極となるボール圧縮部間の距離は、ボンディングの位置精度や圧着ボールの直径により僅かに変動するものの125μmとなる。
Claims (4)
- 銀を主成分として含む芯材と、
前記芯材の表面に設けられ、金を主成分として含むと共に、硫黄、セレン、及びテルルから選ばれる少なくとも1つの硫黄族元素を含む被覆層とを有する金被覆銀ボンディングワイヤであって、
前記金被覆銀ボンディングワイヤは、前記ワイヤの全体量に対して、2質量%以上7質量%以下の範囲で金を含み、かつ1質量ppm以上80質量ppm以下の範囲で前記硫黄族元素を含む、金被覆銀ボンディングワイヤ。 - 銀を主成分として含む芯材と、
前記芯材の表面に設けられ、金を主成分として含むと共に、硫黄、セレン、及びテルルから選ばれる少なくとも1つの硫黄族元素を含む被覆層とを有する金被覆銀ボンディングワイヤであって、
前記金被覆銀ボンディングワイヤは、前記ワイヤの全体量に対して、2質量%以上7質量%以下の範囲で金を含み、
前記硫黄族元素は、前記ボンディングワイヤの全体量に対して、1質量ppm以上80質量ppm以下の範囲で含まれ、
前記金被覆銀ボンディングワイヤの一端にフリーエアーボールを形成したとき、前記フリーエアーボールは、前記ボンディングワイヤと前記フリーエアーボールの断面図において、ワイヤとボールとのネック部を結ぶ線の中点からボールの最下点に相当する位置まで伸ばした垂線上で、ネック部を結ぶ線の中点から60%以上の位置に相当する箇所に金濃化領域を有する、金被覆銀ボンディングワイヤ。 - 前記金濃化領域における金濃度は、前記銀と前記金との合計量に対して8質量%以上である、請求項2に記載の金被覆銀ボンディングワイヤ。
- 少なくとも1つの電極を有する1つ又は複数の半導体チップと、
リードフレーム又は基板とを備え、
前記半導体チップの電極と前記リードフレームとの間、前記半導体チップの電極と前記基板の電極との間、及び前記複数の半導体チップの電極間から選ばれる少なくとも1つを金被覆銀ボンディングワイヤで接続した半導体装置であって、
前記金被覆銀ボンディングワイヤは、銀を主成分として含む芯材と、
前記芯材の表面に設けられ、金を主成分として含むと共に、硫黄、セレン、及びテルルから選ばれる少なくとも1つの硫黄族元素を含む被覆層とを有し、
前記金被覆銀ボンディングワイヤは、前記ワイヤの全体量に対して、2質量%以上7質量%以下の範囲で金を含み、かつ1質量ppm以上80質量ppm以下の範囲で前記硫黄族元素を含む、半導体装置。
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CN201980001958.3A CN112088425A (zh) | 2019-04-12 | 2019-08-01 | 金覆盖银接合线和其制造方法及半导体装置和其制造方法 |
SG11202004295WA SG11202004295WA (en) | 2019-04-12 | 2019-08-01 | Gold-Coated Silver Bonding Wire And Manufacturing Method Thereof, And Semiconductor Device And Manufacturing Method Thereof |
PCT/JP2019/030377 WO2020208839A1 (ja) | 2019-04-12 | 2019-08-01 | 金被覆銀ボンディングワイヤとその製造方法、及び半導体装置とその製造方法 |
KR1020197030247A KR102288721B1 (ko) | 2019-04-12 | 2019-08-01 | 금 피복 은 본딩 와이어와 그 제조 방법, 및 반도체 장치와 그 제조 방법 |
TW108127421A TWI739139B (zh) | 2019-04-12 | 2019-08-01 | 金被覆銀接合線及其製造方法、和半導體裝置及其製造方法 |
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