JP5728126B2 - パワー半導体装置及びその製造方法並びにボンディングワイヤ - Google Patents
パワー半導体装置及びその製造方法並びにボンディングワイヤ Download PDFInfo
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- JP5728126B2 JP5728126B2 JP2014502176A JP2014502176A JP5728126B2 JP 5728126 B2 JP5728126 B2 JP 5728126B2 JP 2014502176 A JP2014502176 A JP 2014502176A JP 2014502176 A JP2014502176 A JP 2014502176A JP 5728126 B2 JP5728126 B2 JP 5728126B2
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Description
本願は、2012年2月27日に、日本に出願された特願2012−040116号に基づき優先権を主張し、その内容をここに援用する。
(1)パワー半導体素子及び当該パワー半導体素子上の金属電極(以下「素子電極」という。)と当該素子電極と接続するための金属電極(以下「接続電極」という。)を有し、素子電極と接続電極とを金属ワイヤによって双方ともウェッジ接続したパワー半導体装置において、
前記素子電極をAl、Cu、NiまたはTi素子電極とし、
前記金属ワイヤは直径150μm超2mm以下のAg又はAg合金ワイヤであり、
前記Al、Cu、NiまたはTi素子電極は50Å厚以上のNi、Cr、Cu、Pd、V、Ti、Pt、Zn、Ag、Au、W、Alの金属(以下「被覆層金属」という。)のいずれか1種類の金属又は前記被覆層金属の2種類以上のみから構成される合金のみから構成される層(以下「電極被覆層」という。)の1層以上を隣り合う前記Al、Cu、NiまたはTi素子電極および電極被覆層の金属成分が異なるように有し、
前記電極被覆層の最表層がAg、AuまたはPdであり、
前記素子電極がAl素子電極で、前記電極被覆層の最表層がAgの場合には、
最表層の電極被覆層より下層に前記被覆層金属からAgを除いた金属のいずれか1種類の金属又は前記被覆層金属の2種類以上のみから構成される合金のみから構成される電極被覆層の1層以上を隣り合う前記素子電極および電極被覆層の金属成分が異なるように有することを特徴とするパワー半導体装置。
(2)前記Ag又はAg合金ワイヤの表面に30Å厚以上のPd、Au、Zn、Pt、Ni、Snの1種以上又はこれらの合金若しくはこれら金属の酸化物又は窒化物を有するワイヤ被覆層を有することを特徴とする(1)に記載のパワー半導体装置。
(3)前記Ag又はAg合金ワイヤと素子電極及び接続電極との間の接続が、超音波を利用して接続されており、接続時の電極又はワイヤのいずれかの温度が60℃以上で接続されていることを特徴とする(1)又は(2)に記載のパワー半導体装置。
(4)前記ワイヤ表面のワイヤ被覆層が、ワイヤと電極の接続を行った後に、湿式又は乾式若しくはナノ粒子金属の被着によるコーティングにより行われていることを特徴とする(2)に記載のパワー半導体装置。
(5)前記パワー半導体素子がSiC半導体を用いた素子であることを特徴とする(1)乃至(4)のいずれかに記載のパワー半導体装置。
(6)前記Ag又はAg合金ワイヤと素子電極及び接続電極との間の接続を超音波を利用して行い、接続時の電極又はワイヤのいずれかの温度を60℃以上として接続することを特徴とする(1)又は(2)に記載のパワー半導体装置の製造方法。
(7)ワイヤと電極の接続を行った後に、湿式又は乾式若しくはナノ粒子金属の被着によるコーティングにより前記ワイヤ表面の被覆層を形成することを特徴とする(2)に記載のパワー半導体装置の製造方法。
(8)直径が150μm超2mm以下である半導体接続用のAg又はAg合金ボンディングワイヤであって、表面にPd、Au、Zn、Pt、Ni、Snの1種以上又はこれらの合金若しくはこれら金属の酸化物又は窒化物を有するワイヤ被覆層を有し、前記ボンディングワイヤの残留抵抗比が5以上2000以下であり、前記ボンディングワイヤ被覆層の厚みがボンディングワイヤ直径の1/5以下でありかつ10Å以上であり、前記ボンディングワイヤ被覆層とボンディングワイヤ母材との間にワイヤ被覆層が有する金属とAgの拡散層を有し、該拡散層の厚みが50Å以上10μm以下であることを特徴とするボンディングワイヤ。
(9)前記ボンディングワイヤの残留抵抗比が80以上1000以下であることを特徴とする(8)に記載のボンディングワイヤ。
(10)前記ボンディングワイヤの破断伸びが15%以上であることを特徴とする(8)または(9)に記載のボンディングワイヤ。
(11)前記ボンディングワイヤの破断伸びが25%以上であることを特徴とする(10)に記載のボンディングワイヤ。
(12)ワイヤに被覆層を形成した後、250℃以上の温度で熱処理し、さらに、伸線したことを特徴とする(8)ないし(11)のいずれか1つに記載のボンディングワイヤ。
本発明のボンディングワイヤの製造方法について説明する。
2 パワー半導体素子
3 素子電極
4 接続電極
5 金属ワイヤ
6 基板
7 ウェッジ接合部
Claims (12)
- パワー半導体素子及び当該パワー半導体素子上の金属電極(以下「素子電極」という。)と当該素子電極と接続するための金属電極(以下「接続電極」という。)を有し、素子電極と接続電極とを金属ワイヤによって双方ともウェッジ接続したパワー半導体装置において、
前記素子電極をAl、Cu、NiまたはTi素子電極とし、
前記金属ワイヤは直径150μm超2mm以下のAg又はAg合金ワイヤであり、
前記Al、Cu、NiまたはTi素子電極は50Å厚以上のNi、Cr、Cu、Pd、V、Ti、Pt、Zn、Ag、Au、W、Alの金属(以下「被覆層金属」という。)のいずれか1種類の金属又は前記被覆層金属の2種類以上のみから構成される合金のみから構成される層(以下「電極被覆層」という。)の1層以上を隣り合う前記Al、Cu、NiまたはTi素子電極および電極被覆層の金属成分が異なるように有し、
前記電極被覆層の最表層がAg、AuまたはPdであり、
前記素子電極がAl素子電極で、前記電極被覆層の最表層がAgの場合には、
最表層の電極被覆層より下層に前記被覆層金属からAgを除いた金属のいずれか1種類の金属又は前記被覆層金属の2種類以上のみから構成される合金のみから構成される電極被覆層の1層以上を隣り合う前記素子電極および電極被覆層の金属成分が異なるように有することを特徴とするパワー半導体装置。 - 前記Ag又はAg合金ワイヤの表面に30Å厚以上のPd、Au、Zn、Pt、Ni、Snの1種以上又はこれらの合金若しくはこれら金属の酸化物又は窒化物を有するワイヤ被覆層を有することを特徴とする請求項1に記載のパワー半導体装置。
- 前記Ag又はAg合金ワイヤと素子電極及び接続電極との間の接続が、超音波を利用して接続されており、接続時の電極又はワイヤのいずれかの温度が60℃以上で接続されていることを特徴とする請求項1又は請求項2に記載のパワー半導体装置。
- 前記ワイヤ表面のワイヤ被覆層が、ワイヤと電極の接続を行った後に、湿式又は乾式若しくはナノ粒子金属の被着によるコーティングにより行われていることを特徴とする請求項2に記載のパワー半導体装置。
- 前記パワー半導体素子がSiC半導体を用いた素子であることを特徴とする請求項1乃至請求項4のいずれかに記載のパワー半導体装置。
- 前記Ag又はAg合金ワイヤと素子電極及び接続電極との間の接続を超音波を利用して行い、接続時の電極又はワイヤのいずれかの温度を60℃以上として接続することを特徴とする請求項1又は請求項2に記載のパワー半導体装置の製造方法。
- ワイヤと電極の接続を行った後に、湿式又は乾式若しくはナノ粒子金属の被着によるコーティングにより前記ワイヤ表面の被覆層を形成することを特徴とする請求項2に記載のパワー半導体装置の製造方法。
- 直径が150μm超2mm以下である半導体接続用のAg又はAg合金ボンディングワイヤであって、表面にPd、Au、Zn、Pt、Ni、Snの1種以上又はこれらの合金若しくはこれら金属の酸化物又は窒化物を有するワイヤ被覆層を有し、前記ボンディングワイヤの残留抵抗比が5以上2000以下であり、前記ボンディングワイヤ被覆層の厚みがボンディングワイヤ直径の1/5以下でありかつ10Å以上であり、前記ボンディングワイヤ被覆層とボンディングワイヤ母材との間にワイヤ被覆層が有する金属とAgの拡散層を有し、該拡散層の厚みが50Å以上10μm以下であることを特徴とするボンディングワイヤ。
- 前記ボンディングワイヤの残留抵抗比が80以上1000以下であることを特徴とする請求項8に記載のボンディングワイヤ。
- 前記ボンディングワイヤの破断伸びが15%以上であることを特徴とする請求項8または請求項9に記載のボンディングワイヤ。
- 前記ボンディングワイヤの破断伸びが25%以上であることを特徴とする請求項10に記載のボンディングワイヤ。
- ワイヤに被覆層を形成した後、250℃以上の温度で熱処理し、さらに、伸線したことを特徴とする請求項8ないし請求項11のいずれか1項に記載のボンディングワイヤ。
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