CN1412786A - 半导体封装导线的制造方法及其制成品 - Google Patents

半导体封装导线的制造方法及其制成品 Download PDF

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CN1412786A
CN1412786A CN01135469A CN01135469A CN1412786A CN 1412786 A CN1412786 A CN 1412786A CN 01135469 A CN01135469 A CN 01135469A CN 01135469 A CN01135469 A CN 01135469A CN 1412786 A CN1412786 A CN 1412786A
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廖本添
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Asep Tec Co Ltd
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Abstract

一种半导体封装导线的制造方法及其制成品，所述方法包括以下步骤：一、准备至少一盘元，二、进行第一道抽拉处理，以得到一心线，三、进行电镀作业，以得到一镀金心线，四、进行第二道抽拉处理，以得到一极细心线，五、对所述极细心线进行检验，以得到一半导体封装导线；所述半导体封装导线包括一以具有延展性的非纯金金属为材质的线心，及一均匀地附着于所述线心表面且具有适当厚度的金质镀层。

Description

半导体封装导线的制造方法及其制成品
【技术领域】
本发明涉及一种半导体(例如IC、LED等)的封装导线的制造方法及其制成品。
【背景技术】
现有的一种半导体封装导线为了得到高品质的信号导通率，所述封装导线整体均是以纯金为材质而制成。虽然，所述封装导线借由纯金的材料特性，可让半导体于运作时获得优良的信号导通率，但是，纯金的材料成本高昂，这不但造成业者整体成本无法有效地降低，更导致业者的竞争力大幅下降。
【发明内容】
本发明的目的在于提供一种材料成本低廉，且具有高品质信号导通率的半导体封装导线的制造方法及其制成品。
为实现上述目的，根据本发明一方面提供一种半导体封装导线的制造方法，其特点是：所述方法包括以下步骤：一、准备至少一盘元：所述盘元是以具有延展性的非纯金金属为材质；二、进行第一道抽拉处理：使所述盘元经过至少一模座，进而使所述盘元成形为一具有一第一线径的心线；三、进行电镀作业：对所述心线进行电镀，使所述心线表面均匀镀上一具有适当厚度的金质镀层而成为一镀金心线；四、进行第二道抽拉处理：使所述镀金心线经过至少一模座，进而使所述镀金心线成形为一具有一第二线径的极细心线；五、对所述极细心线进行检验：若所述极细心线通过检验，所述极细心线即为一可使用于半导体封装的半导体封装导线。
根据本发明另一方面提供一种采用所述方法获得的半导体封装导线，它具有一线心及一金质镀层，其特点是：所述线心，是以具有延展性的非纯金金属为材质；所述金质镀层均匀地附着于所述线心表面，且具有适当厚度。
【附图说明】
下面结合附图及较佳实施例对本发明进行详细说明：
图1是本发明一较佳实施例的制造流程图；
图2是所述较佳实施例的一电镀作业的流程图；
图3是所述较佳实施例的一镀金心线的横断面剖视图；
图4是所述较佳实施例的一制成品的横断面剖视图；
【具体实施方式】
本发明半导体封装导线的制造方法及其制成品的一较佳实施例，参阅图1、2、3，包括以下步骤：
一、准备一盘元：所述盘元(未图示)是以具有延展性的非纯金金属为材质，在本实施例中，所述盘元可为一纯银线或一纯钯线，借以节省材料成本，且根据试验结果，此两种线材均具有良好的信号导通率、金属延展性，且对电镀金属具有良好的附着性。
二、进行第一道抽拉处理：使所述盘元经过至少一模座(未图示)，进而使所述盘元缩减线径至预定尺寸，而成形为一具有一第一线径的心线10，所述心线10的第一线径的大小范围为300μm～500μm。
三、进行电镀作业：对所述心线10进行电镀，所述电镀作业包括以下步骤：
(一)、碱性脱脂处理：以碱性电解脱脂剂，去除所述心线10表面的油污、杂质。
(二)、第一道水洗处理：利用高压清水喷洒所述心线10，以将所述心线10表面洗净。
(三)、酸性活化处理：以酸性药水对所述心线10表面作活化处理。
(四)、第二道水洗处理：利用高压清水喷洒所述心线10，将所述心线10表面洗净，借上述处理步骤，可使所述心线10表面对电镀金属产生良好的附着性。
(五)、镀金处理：对所述心线10进行电镀，使所述心线10表面均匀镀上一具有适当厚度，且含有纯度99.99％以上的纯金的金质镀层20，而使所述心线10成为一镀金心线30。
(六)、第三道水洗处理：利用高压清水喷洒所述镀金心线30，将所述镀金心线30表面洗净，以使所述镀金心线30表面光滑洁净，进而使所述镀金心线30可具有良好的信号导通率及延展性。
(七)、封孔后处理：对所述镀金心线30表面使用封孔剂，以防止所述镀金心线30氧化。
(八)、烘干：将所述镀金心线30表面烘干，以使所述镀金心线30具有耐腐蚀性及高信号导通率的稳定性。
四、进行第二道抽拉处理：参阅图4，使所述镀金心线30经过至少一模座(未图示)，进而使所述镀金心线30成形为一具有一第二线径的极细心线40，所述极细心线40的第二线径的大小范围为1μm～200μm。
五、对所述极细心线40进行检验：检验所述极细心线40的信号导通率、机械特性、线径，及杂质含量等，若所述极细心线40通过检验，所述极细心线40即为一可使用于半导体封装的半导体封装导线。
参阅图4，依上述步骤制成，而可使用于半导体封装的所述极细心线40包括一以具有延展性的纯银或纯钯为材质的线心41，及一均匀地附着于所述线心41表面，且具有适当厚度并含有纯度99.99％以上的纯金的金质镀层42。
经由以上的说明，可再将本发明的优点归纳如下：
一、本发明的所述极细心线40的线心41是以纯银或纯钯为材质，而只在所述线心41的表面电镀所述金质镀层42，因此，本发明可有效降低业者的材料成本，根据发明人的成本与效率估算，本发明与现有的封装导线相比较，约可降低35％的整体生产成本，所以，本发明可大幅提高业者的竞争力。
二、本发明的所述极细心线40的线心41是以纯银或纯钯为材质，根据试验结果可知纯银或纯钯均具有良好的信号导通率，且所述线心41表面又镀有近纯金，而具有高信号导通率的所述金质镀层42，所以，本发明可具有高品质的信号导通率。
三、本发明是以线径较粗的所述心线10进行电镀，如此，不但可避免所述心线10于电镀时断裂，且可提高生产效率。
归纳上述，本发明的半导体封装导线的制造方法及其制成品，不但材料成本低廉，且具有高品质的信号导通率，所以确实能达到发明的目的。

Claims (9)

1.一种半导体封装导线的制造方法，其特征在于：
所述方法包括以下步骤：
一、准备至少一盘元：所述盘元是以具有延展性的非纯金金属为材质；
二、进行第一道抽拉处理：使所述盘元经过至少一模座，进而使所述盘元成形为一具有一第一线径的心线；
三、进行电镀作业：对所述心线进行电镀，使所述心线表面均匀镀上一具有适当厚度的金质镀层而成为一镀金心线；
四、进行第二道抽拉处理：使所述镀金心线经过至少一模座，进而使所述镀金心线成形为一具有一第二线径的极细心线；
五、对所述极细心线进行检验：若所述极细心线通过检验，所述极细心线即为一可使用于半导体封装的半导体封装导线。
2.如权利要求1所述的半导体封装导线的制造方法，其特征在于：
所述盘元为纯银线。
3.如权利要求1所述的半导体封装导线的制造方法，其特征在于：
所述盘元为纯钯线。
4.如权利要求1所述的半导体封装导线的制造方法，其特征在于：
所述心线的第一线径为300μm～500μm。
5.如权利要求1所述的半导体封装导线的制造方法，其特征在于：
所述金质镀层含有纯度99.99％以上的纯金。
6.如权利要求1所述的半导体封装导线的制造方法，其特征在于：
步骤三的电镀作业进一步包括以下步骤：
一、碱性脱脂处理：以碱性电解脱脂剂去除所述心线表面的油污、杂质；
二、第一道水洗处理：利用高压清水喷洒所述心线，以将所述心线表面洗净；
三、酸性活化处理：以酸性药水对所述心线表面作活化处理；
四、第二道水洗处理：利用高压清水喷洒所述心线，以将所述心线表面洗净；
五、镀金处理：对所述心线进行电镀，使所述心线表面均匀镀上所述金质镀层而成为所述镀金心线；
六、第三道水洗处理：利用高压清水喷洒所述镀金心线，以将所述镀金心线表面洗净；
七、封孔后处理：对所述镀金心线使用封孔剂，以防止所述镀金心线氧化；
八、烘干：将所述镀金心线烘干。
7.如权利要求1所述的半导体封装导线的制造方法，其特征在于：
所述极细心线的第二线径为1μm～200μm。
8.如权利要求1所述的半导体封装导线的制造方法，其特征在于：
步骤五的检验至少包括检验所述极细心线的信号导通率、机械特性，及线径。
9.一种半导体封装导线，具有一线心及一金质镀层，其特征在于：
所述线心，是以具有延展性的非纯金金属为材质；
所述金质镀层均匀地附着于所述线心表面，且具有适当厚度。
CN01135469A 2001-10-11 2001-10-11 半导体封装导线的制造方法及其制成品 Pending CN1412786A (zh)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101431029B (zh) * 2007-11-06 2010-07-07 李俊德 封装导线用的复合金属线及其制造方法
CN101894821A (zh) * 2010-05-28 2010-11-24 日月光封装测试(上海)有限公司 半导体封装打线用的导线结构及其结合构造
CN101569968B (zh) * 2008-05-04 2011-06-29 李俊德 封装导线用的银合金焊线及其制造方法
CN104217784A (zh) * 2013-05-28 2014-12-17 尼克桑斯公司 电导线及其制造方法
EP2822029A4 (en) * 2012-02-27 2015-12-23 Nippon Micrometal Corp SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND CONNECTING CABLE
CN105810652A (zh) * 2015-01-19 2016-07-27 Mk电子株式会社 接合线

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101431029B (zh) * 2007-11-06 2010-07-07 李俊德 封装导线用的复合金属线及其制造方法
CN101569968B (zh) * 2008-05-04 2011-06-29 李俊德 封装导线用的银合金焊线及其制造方法
CN101894821A (zh) * 2010-05-28 2010-11-24 日月光封装测试(上海)有限公司 半导体封装打线用的导线结构及其结合构造
EP2822029A4 (en) * 2012-02-27 2015-12-23 Nippon Micrometal Corp SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND CONNECTING CABLE
CN104217784A (zh) * 2013-05-28 2014-12-17 尼克桑斯公司 电导线及其制造方法
CN105810652A (zh) * 2015-01-19 2016-07-27 Mk电子株式会社 接合线

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