JP2019106550A - 電極接続方法及び電極接続構造 - Google Patents

電極接続方法及び電極接続構造 Download PDF

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JP2019106550A
JP2019106550A JP2019055343A JP2019055343A JP2019106550A JP 2019106550 A JP2019106550 A JP 2019106550A JP 2019055343 A JP2019055343 A JP 2019055343A JP 2019055343 A JP2019055343 A JP 2019055343A JP 2019106550 A JP2019106550 A JP 2019106550A
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electrode
plating
contact
alloy
electrodes
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JP6667765B2 (ja
JP2019106550A5 (ja
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巽　宏平
Kohei Tatsumi
宏平 巽
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Waseda University
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Waseda University
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Abstract

【課題】電気回路の電極間を点状又は線状に接触させた状態でメッキにより接続することで、隙間のない密着した接続を可能とする電極接続方法等を提供する。【解決手段】電気的に接続される電気回路の複数の電極間の少なくとも一部を直接又は間接的に接触させ、当該接触部分の周辺にメッキ液が流通した状態で前記電極間をメッキして接続するものである。また、前記接触部分は線状又は点状に保持されているものである。さらに、メッキを行う材料として、ニッケル若しくはニッケル合金、又は、銅もしくは銅合金を用い、接続される電極の表面の材料が、ニッケル若しくはニッケル合金、銅若しくは銅合金、金若しくは金合金、銀若しくは銀合金、又は、パラジウム若しくはパラジウム合金とするものである。【選択図】図１

Description

本発明は、電気回路の電極間をメッキにより電気的に接続する電極接続方法等に関する。
電極間を接続する技術として、従来は低融点の半田が多用されてきた。しかしながら、半田による接続は、近年のシリコンカーバイド（ＳｉＣ）等を利用したパワー半導体などでの高パワー密度化において耐熱性が十分ではない。また、例えば、比較的高温で、長期にわたって動作させる太陽光パネルの接続などにおいても、半田による接続の場合、融点を超えて使用することがなくても、比較的高温となる場合には長期耐久性、耐熱性が十分ではない。半田付けによる接続以外にも、例えば、高融点の材料を接続する技術としては、超音波接合、ろう付け、溶接等の技術が知られているが、超音波接合の場合は応力の負荷が大きく、接合する対象が限定される。また、ろう付けや溶接の場合は被接続体が高温となるため、いずれもエレクトロニクス部品には不適である。さらに、高温で組織が変化することにより、鉄鋼、非鉄材料の特性劣化が問題となることがある。そこで、比較的低温で接続することができ、高温での使用が可能となる高耐熱の接続技術が求められている。
また、エレクトロニクス部品の接続において、メッキにより電極間を接続する技術として、例えば特許文献１−３に示す技術が開示されている。特許文献１に示す技術は、リード先端に、メッキ若しくは折曲げにより５〜２００μｍ高さの同一材質あるいは電気導体の突起を設けた半導体電極とのメッキ接続用リード、および、前記リード先端の突起と半導体素子上の電極とを同位置に配置すると共に電気的に導通が得られるように接触、固定せしめて、メッキ浴中に浸漬するか、メッキ液噴霧中に置き、リードと半導体素子上の電極をメッキ金属により接続するものである。
特許文献２に示す技術は、表面に電極が形成され、かつ側面に絶縁物を有する半導体素子を、リード用配線の形成された基板凹部に、前記電極とリード用配線端部が近接するように配置し、前記半導体素子の電極と前記リード用配線端部とをメッキ法により接続し、電気的接続を得るものである。
特許文献３に示す技術は、半導体素子１と金属板２との間において、突起３を中心に放射状にメッキ４が成長する構成としたことにより、半導体素子１と金属板２との接合部分にボイドが発生することがなく、確実に接合することができ、また半導体素子１と金属板２を加熱することなく接合できるため、熱により半導体素子１の表面電極等を破壊してしまう心配がなく、またメッキ４に残留熱応力も残らない。また、銅メッキでできたメッキ４は半田よりも強度が高く、高い融点を持つため、半導体素子１をＳｉ半導体の使用温度よりも高温で使用した場合でも、接合部の信頼性を高めることができ、メッキ４は、熱伝導率、電気伝導率が高いため、半導体素子の放熱性を良くし、かつ実装抵抗を減らすことができるものである。
特開平０６−１４０５５９号公報 特開昭５２−１５１５６５号公報 特開２００７−３３５４７３号公報
しかしながら、特許文献１に示す技術は、ＬＳＩ用途でＴＡＢリードとＬＳＩチップ電極を銅メッキで接続する技術であり、高温耐熱の用途ではない。また、特に高温耐熱を用途とする場合は、メッキ処理の際に生じるボイドをなくして、接続部分をメッキで埋めることが重要であるが、そのあたりの技術に関しては特に言及されていない。
また、特許文献２に示す技術は、電極間を近接させてメッキ処理を行うが、電極同士が接触していないため同電位になっておらず、欠陥のない均一なメッキの接続を実現するのが困難になるという課題を有する。
さらに、特許文献３に示す技術は、半導体素子１と金属板２との間において、突起３を中心に放射状にメッキ４が成長する構成としているが、メッキの処理はメッキしようとする箇所全体に同時に起こっており、突起３を中心に順次広がりながらメッキ処理が進んでいるわけではない。すなわち、対向部分の全体にメッキしようとすれば、半導体素子１と金属板２とが平行な領域においては、積層形成されたメッキがメッキ速度のばらつきにより対向部分間で接合されてしまい、遮蔽された空隙を生じる可能性が高く、ボイドが発生してしまうという課題を有する。
本発明は、電気回路の電極間を少なくとも一部接触させた状態で、当該接続部分にメッキ液を流通させてメッキにより接続することで、隙間のない密着した接続を可能とする電極接続方法等を提供する。
本発明に係る電極接続方法は、電気的に接続される電気回路において、第１の電極と第２の電極とを空間を有するように対向して配設し、当該空間内で少なくとも一部直接又は間接的に前記第１の電極と前記第２の電極とを接触させ、少なくとも前記第１の電極と前記第２の電極との接触箇所の周辺近傍にメッキ液が流通した状態で、前記接触箇所と当該接触箇所の周辺近傍の領域、及び前記接触箇所の周辺近傍と離隔した領域を含む前記空間内の前記第１の電極と前記第２の電極とをメッキし、前記空間内の、前記接触箇所から空間を充塞していくメッキ積層表面と前記第１の電極及び前記第２の電極の対向する表面にそれぞれ形成されるメッキ積層表面とが前記メッキ液に接触しており、前記空間内の前記接触箇所の周辺近傍から離隔した領域において、前記第１の電極の表面に形成される前記メッキ積層表面と前記第２の電極の表面に形成される前記メッキ積層表面とが接触することで形成される遮蔽された空隙が生じる前にメッキ処理を停止させるものである。
このように、本発明に係る電極接続方法においては、電気的に接続される電気回路において、第１の電極と第２の電極とを空間を有するように対向して配設し、当該空間内で少なくとも一部直接又は間接的に前記第１の電極と前記第２の電極とを接触させ、少なくとも前記第１の電極と前記第２の電極との接触箇所の周辺近傍にメッキ液が流通した状態で、前記接触箇所と当該接触箇所の周辺近傍の領域、及び前記接触箇所の周辺近傍と離隔した領域を含む前記空間内の前記第１の電極と前記第２の電極とをメッキし、前記空間内の、前記接触箇所から空間を充塞していくメッキ積層表面と前記第１の電極及び前記第２の電極の対向する表面にそれぞれ形成されるメッキ積層表面とが前記メッキ液に接触しており、前記空間内の前記接触箇所の周辺近傍から離隔した領域において、前記第１の電極の表面に形成される前記メッキ積層表面と前記第２の電極の表面に形成される前記メッキ積層表面とが接触することで形成される遮蔽された空隙が生じる前にメッキ処理を停止させるため、隙間のない密着した接続を可能にするという効果を奏する。
本発明に係る電極接続構造は、電気回路の第１の電極と第２の電極とが電気的に接続される電極接続構造であって、前記第１の電極と第２の電極とが、少なくとも１つの接触箇所で直接又は間接的に接触した状態で対向して配設され、メッキ処理による積層が、前記接触箇所の周辺近傍と、対向する前記第１の電極及び前記第２の電極のそれぞれの対向する表面とに形成されており、前記対向する第１の電極と第２の電極との対向する表面の領域であって、前記接触箇所の周辺近傍の領域はメッキ処理による積層で充塞されて接続されており、前記接触箇所の周辺近傍の領域から離隔した部分は、対向する第１の電極と第２の電極のそれぞれの対向する表面のメッキ処理による積層により遮蔽された空隙が形成されない形で分離されているものである。
このように、本発明に係る電極接続構造においては、電気回路の第１の電極と第２の電極とが電気的に接続される電極接続構造であって、前記第１の電極と第２の電極とが、少なくとも１つの接触箇所で直接又は間接的に接触した状態で対向して配設され、メッキ処理による積層が、前記接触箇所の周辺近傍と、対向する前記第１の電極及び前記第２の電極のそれぞれの対向する表面とに形成されており、前記対向する第１の電極と第２の電極との対向する表面の領域であって、前記接触箇所の周辺近傍の領域はメッキ処理による積層で充塞されて接続されており、前記接触箇所の周辺近傍の領域から離隔した部分は、対向する第１の電極と第２の電極のそれぞれの対向する表面のメッキ処理による積層により遮蔽された空隙が形成されない形で分離されているため、隙間のない密着した接続を可能にするという効果を奏する。
本発明に係る電極接続方法によるメッキ処理部分を示す図である。 チップ電極とリード線との接合を想定した実験結果を示す図である。 ダイボンディングを想定した実験結果を示す図である。 基板電極とＳｉＣチップの裏面電極をメッキで接合する場合のメッキ処理過程を示す図である。 ダイボンディングの接続の一例を示す図である。 基板に貫通孔がある場合のメッキ処理過程を示す図である。 その他の実施形態に係る電極接続構造においてインターポーザを用いる場合の構成を示す図である。 その他の実施形態に係る電極接続構造においてチップの側面をコーティングする場合の構成を示す図である。 その他の実施形態に係る電極接続構造においてメッキ処理時に配置を固定する場合の構成を示す図である。 本発明に係る電極接続方法及び電極接続構造の実験結果を示す第１の図である。 本発明に係る電極接続方法及び電極接続構造の実験結果を示す第２の図である。 本発明に係る電極接続方法及び電極接続構造の実験結果を示す第３の図である。 本発明に係る電極接続方法及び電極接続構造の実験結果を示す第４の図である。 本発明に係る電極接続方法及び電極接続構造の実験結果を示す第５の図である。
以下、本発明の実施の形態を説明する。また、本実施形態の全体を通して同じ要素には同じ符号を付けている。
（本発明の第１の実施形態）
本実施形態に係る電極接続方法及び電極接続構造について、図１ないし図５を用いて説明する。本発明に係る電極接続方法は、高融点の金属又はその合金（以下の実施の形態では主にニッケル：Ｎｉとする）を用いた相互接続方法である。Ｎｉの特性としては、融点が１４５５℃と高く、耐食性がよいことが知られており、Ｎｉメッキを行うことで高温環境に耐える接続を実現することができる。また、本実施形態に係る電極接続構造は、以下に示す電極接続方法により生成された電極接続構造である。
ハイブリッド自動者又は電気自動車に搭載されている電力変換器を小型化しつつ効率を上げるために、ＳｉＣデバイスなどの技術を用いて出力密度を上げる方法の開発研究が進められており、その結果、高度な耐熱実装技術の需要が高まっている。本実施形態においては、２つの電極の間の接続部をメッキ金属で被うことによって、同時に２種類の接続、すなわち、（１）素子電極と基板端子との間の接続、（２）ダイボンディング接続、を可能とする。
図１は、本実施形態に係る電極接続方法によるメッキ処理部分を示す図である。図１において、基板電極１ａとＳｉＣチップ２の裏面電極とが積層状態でダイボンディングにより（ボールバンプ又はワイヤ状の導電端子を介して）接続され、基板電極１ｂとＳｉＣチップ２のパッド３とがリード線４により接続されている。それぞれの接続箇所の表面にはＮｉメッキがされており、接続部分をＮｉメッキ層５で被覆している。本実施形態においては、図１に示すように、リード線とパッドとの接続部分やチップと基板との接続部分をＮｉメッキを利用して接合することで、高温耐熱の接続を実現している。
図２は、チップ電極とリード線との接合を想定した実験結果を示す図である。図２（Ａ）に示すように、基板及びリード材料としては主に銅（Ｃｕ）を用い、電解Ｎｉメッキにより５．０ｍｍ×５．０ｍｍのＣｕ板にＣｕワイヤ（直径：１７２μｍ）を接合した。そのときの条件は、浴温が５０℃、電流密度５Ａ／ｄｍ２とし、平板上のＣｕメッキの成長速度は約０．８３μｍ／ｍｉｎであった。Ｃｕは電気伝導性が良く、加工性に富み、Ａｌなどと比べ前処理が容易であると共に、Ｃｕ−Ｎｉ合金は全率固溶体で、高温での接続信頼性が期待できる。図２（Ｂ）は、Ｃｕ板とＣｕワイヤの接合部の断面である。図２（Ｂ）に示すように、Ｎｉメッキにより問題となるようなボイドなどの欠陥がなく、密着性もよく接合されていることがわかる。
図３は、ダイボンディングを想定した実験結果を示す図である。図３（Ａ）に示すように、２．７ｍｍの長さで短冊状に並べられたリードフレームに金（Ａｕ）蒸着ＳｉチップのＡｕ蒸着面を接触させてＮｉメッキを行った。図３（Ｂ）は、チップとリードフレームの接合部の断面である。ここでも、図２の場合と同様に、問題となるようなボイドなどの欠陥がなく、密着性もよく接合されていることがわかる。
図２及び図３の実験結果から、接続の対象となる被接続体（図２の場合はＣｕワイヤとＣｕ板、図３の場合はチップの裏面電極とリードフレーム）が一部接触した状態で、当該接触部分の周辺にメッキ液を十分に流通させることで、ボイドのような欠損がない接合部を形成することができる。
特に、図２に示すように、被接続体が線状に接触した状態でメッキ処理を行うことで、被接続体の接触部分の周辺にメッキ液が十分に行き渡り、よりボイドのような欠損がない高品質の接合部を形成することができる。また、同様に、図２及び図３の実験には示されていないが、チップと基板をボールバンプで接合するような場合は接触箇所が点状となり、被接続体の接触部分の周辺にメッキ液が十分に行き渡ることで、この接触箇所を中心にメッキ処理が進み、ボイドのような欠損がない高品質の接合部を形成することができる。
上記のメッキ処理について、さらに詳細に説明する。図４は、基板電極とＳｉＣチップの裏面電極をメッキで接合する場合のメッキ処理過程を示す図である。図４（Ａ）がメッキ処理前の状態を示しており、図４（Ｂ）→図４（Ｃ）→図４（Ｄ）の順にメッキ処理が進んだ状態を示している。
図４（Ａ）において、基板電極１ａとＳｉＣチップ２の裏面電極は、ボールバンプの円弧部分（凸部）を介して間接的に接触した状態で対向して配設されている。この状態でメッキ液に浸漬させてメッキ処理を開始すると、図４（Ｂ）に示すように、凸部の接触領域表面及び各電極間の対向面表面から順次メッキによる埋め込みが行われる。そして、この状態を維持すると図４（Ｃ）に示すようにメッキ処理が進む。図４（Ｂ）、（Ｃ）において、凸部の接触領域表面に近い領域から順次Ｎｉメッキ層５に埋め込まれ、空隙部分が充塞される。
本実施形態においては、この図４（Ｂ）又は図４（Ｃ）の状態でメッキ処理を停止する。すなわち、接触領域表面に最も近い位置のメッキ積層表面がメッキ液に接触している状態で、且つ、当該メッキ積層表面による遮蔽された空隙が生じる前にメッキ処理を停止させる必要がある。もし仮にメッキ処理を継続した場合は、図４（Ｄ）に示すように、メッキ処理は全体的に略均一に進行するものの微視的に見ると必ずしても均一ではないため、各電極間の対向面表面から積層形成されたＮｉメッキ層５同士が接合してしまい隙間が発生してしまう。このような遮蔽された隙間が生じるとメッキ液を洗浄することができず、内部に残留してしまい、腐食の原因となってしまう。また、加熱処理を行った際には残留したメッキ液が膨張して高圧となり、メッキ層の損傷を招く可能性がある。したがって、高品質なＮｉメッキ層５を形成するには、図４（Ｂ）又は図４（Ｃ）の状態でメッキ処理を停止するのが非常に重要となる。
なお、メッキ処理を停止する具体的な処理については、予め行った予備実験の結果に基づいてメッキ液への浸漬時間を調整（例えば、製造ラインの速度調整等）してもよいし、リアルタイムにメッキ層の厚みを測定しながら浸漬時間を調整してもよい。
なお、上述したように、被接続体が接触した状態でＮｉメッキされることで、被接続体が同電位となり、メッキ処理を略均一に行うことが可能となる。また、被接続体が線状又は点状に接触した状態でＮｉメッキされることでボイドのような欠損がない接合部を形成することができるが、このときの線や点のサイズは、メッキ処理される領域に対する割合で特定されるようにしてもよい。特に、図３の場合は、微視的に見れば被接続体が面状に接触しているように見えるが、巨視的に見れば線状に接触している。したがって、接触部分のサイズをメッキ処理される領域に対する割合で特定したほうがいい場合もある。例えば、電極の全体のサイズに対して、接触する領域が１／２以下であることが好ましく、さらには１／５以下が好ましい。すなわち、接触部間における微視的にメッキ液が流通できない非メッキ接続部を、電極間の非接触部分のメッキ金属により接続される接続部の面積より小さくすることで、一般的に必要とされる電気伝導性、熱伝導性を十分に確保した電極の接続が可能となる。
このように、本実施形態に係る電極接続方法においては、電気的に接続される電気回路の電極間を一部接触（特に、点状又は線状に接触）させ、当該接触部分の周辺にメッキ液が流通した状態で前記電極間をメッキして接続することで、接触箇所を中心にメッキが広がり、隙間のない密着した接続が可能になる。また、接合部にＮｉメッキが行われて被覆されることで、高温の状態でも正常に動作することができると共に、耐食性をよくすることができる。
なお、上述したメッキ処理はＮｉ又はＮｉ合金以外にも、融点が少なくとも７００℃以上であるＣｕ又はＣｕ合金、Ａｕ又はＡｕ合金、銀（Ａｇ）又はＡｇ合金、パラジウム（Ｐｄ）又はＰｄ合金であってもよい。また、被接続体の電極の表面の材料が、Ｎｉ又はＮｉ合金、Ｃｕ又はＣｕ合金、Ａｕ又はＡｕ合金、Ａｇ又はＡｇ合金、Ｐｄ又はＰｄ合金であってもよい。
メッキ液の種類とチップ電極表面、基板電極表面の組み合わせについては、前記それぞれの組み合わせで好適であるが、ＮｉメッキまたはＮｉ合金メッキに対しては、表面金属の主成分がＣｕ、Ｐｄ、Ｎｉ、Ａｕ、ロジウム（Ｒｈ）、Ａｇであれば、高温での使用で、メッキ金属と結晶構造が同種であり、長期間高温で使用される場合も界面に劣化の原因となる特定の相や金属間化合物起因のボイドが形成されにくい。また、ＣｕメッキまたはＣｕ合金メッキに対しては、表面金属の主成分が、Ｃｕ、Ｎｉ、Ｐｄ、Ａｕ、Ｒｄ、Ａｇが好ましい。さらに、ＰｄまたはＰｄ合金メッキに対しては、表面金属の主成分が、Ｐｄ、Ｃｕ、Ｎｉ、Ａｕ、Ｒｄ、Ａｇが好ましい。
さらに、被接続体の電極間を上記メッキ処理で接続する際には、半導体素子の電極と基板の電極とが直接接触している状態、リード線を介して間接的に接続している状態、球状又は半球状の導電端子を介して間接的に接続している状態で行われるようにしてもよい。そうすることで、接触部分を点状又は線状に保持することができ、隙間のない密着した接続を可能にする。
さらにまた、被接続体としては、ＳｉＣチップ２以外にも、Ｓｉ半導体、ＧａＮ半導体、ＬＥＤ素子であってもよい。そうすることで、上記の接続技術を用いて高温耐熱のデバイスを高温の状態で正常に動作させることができる。またパワー半導体や太陽電池のＳｉ半田半導体において、中高温で長期に使用されるデバイスにも好適である。
さらにまた、上記メッキ処理後に当該メッキ部分を加熱処理するようにしてもよい。そのときの加熱温度は、例えば、メッキ処理に用いた金属の融点（絶対温度：Ｋ）の１／３．５以上、２／３以下程度、レーザーアニール等の局所短時間であれば４／５以下の温度で加熱処理されてもよい。そうすることで、電極とメッキ金属との間で成分を拡散させて密着度を上げることができる。また、加熱処理がなされることでメッキ部分の接続の歪みをなくすことができると共に、接続部の応力を緩和して劣化の防止を図ることができる。
さらにまた、図３の場合のように、ダイボンディングにより接続処理を行う場合は、側面方向からのメッキ液の流入だけでは、全体に行き渡らない場合もあるため、図５に示すように、基板電極にメッキ液を流通させるための工夫を施してもよい。図５は、ダイボンディングの接続の一例を示す図である。図５（Ａ）は、基板をリードフレーム状にした場合を示し、図５（Ｂ）は基板に孔を開けて貫通孔を設けた場合を示し、図５（Ｃ）はスタッドバンプを用いた場合を示している。図５（Ａ）において、リードフレームの各フレーム上にボールバンプ又はワイヤを配設し、チップの電極と点又は線状に接触させて接続する。このとき、フレーム間の隙間からメッキ液が流通されることでメッキ液が全体に行き渡り、欠損がない接合部を形成することができる。なお、このとき、例えばリードフレーム間の幅を基板厚みの１／２以上とすることで、メッキ液の流通を効果的に行うことができる。
また、図５（Ｂ）において、基板電極とチップとをボールバンプ又はワイヤを介して接触させ、基板に貫通孔を設け、その貫通孔からメッキ液を流通させている。こうすることで、メッキ液が全体に行き渡り、欠損がない接合部を形成することができる。なお、このとき、例えば貫通孔の直径を基板の厚さの１／２以上で、２箇所以上設けることで、メッキ液の流通を効果的に行うことができる。
この図５（Ｂ）の場合のメッキ処理について、さらに詳細に説明する。図６は、基板に貫通孔がある場合のメッキ処理過程を示す図である。図６（Ａ）がメッキ処理前の状態を示しており、図６（Ｂ）→図６（Ｃ）→図６（Ｄ）の順にメッキ処理が進んだ状態を示している。
図６（Ａ）において、貫通孔を有する基板の基板電極１ａとＳｉＣチップ２の裏面電極が、ボールバンプの円弧部分（凸部）を介して間接的に接触した状態で対向して配設されている。この状態でメッキ液に浸漬させてメッキ処理を開始すると、図６（Ｂ）に示すように、凸部の接触領域表面及び各電極間の対向面表面から順次メッキによる埋め込みが行われる。そして、この状態を維持すると図６（Ｃ）に示すようにメッキ処理が進む。このとき、凸部の接触領域表面に近い領域から順次Ｎｉメッキ層５に埋め込まれ、空隙部分が充塞される。
本実施形態においては、この図６（Ｂ）又は図６（Ｃ）の状態でメッキ処理を停止する。すなわち、接触領域表面に最も近い位置のメッキ積層表面がメッキ液に接触している状態で、当該メッキ積層表面による遮蔽された空隙が生じる前にメッキ処理を停止させる必要がある。もし仮にメッキ処理を継続した場合は、図６（Ｄ）に示すように、メッキ処理は全体的に略均一に進行するものの必ずしても均一ではないため、ボールバンプ間の領域において各ボールバンプの対向面表面から積層形成されたＮｉメッキ層５同士が接合してしまい隙間が発生してしまう。したがって、高品質なＮｉメッキ層５を形成するには、図４の場合と同様の理由から、図６（Ｂ）又は図６（Ｃ）の状態でメッキ処理を停止するのが非常に重要となる。
なお、メッキ処理を停止する具体的な処理については、予め行った予備実験の結果に基づいてメッキ液への浸漬時間を調整（例えば、製造ラインの速度調整等）してもよいし、リアルタイムにメッキ層の厚みを測定しながら浸漬時間を調整してもよい。
さらに、チップと基板の間隔が十分で、対向する面積が広くない場合には、必ずしも貫通孔を設ける必要がなく、十分な間隔を確保するためのワイヤやボールバンプなどを利用できる。また、ボールバンプを作成する場合には、図５（Ｃ）に示すように、ワイヤボンディング方式を利用したスタッドバンプをメッキ接続の突起端子とすることができる。このときのワイヤは、金、銀、銅などが使用できる。
さらにまた、Ｃｕ、Ａｇ、Ｎｉ金属ボールを１５ｋＨｚ以上の超音波を用いて一方の電極部に接合しておくことも好適である。または、それらの金属の表面層にスズ又はスズ合金などの低融点金属をコーティングしているものを使用し、一方又は両方の電極に加熱により接続しておくこともできる。これらの低融点の金属は、高温でコア金属との拡散により、全体を高融点化することができる。コーティングの厚みは、コア金属の全量の１／２（原子％）以下となる厚みであることが好ましい。また、リードやワイヤ接続を行う場合も同様に適用することができる。
さらにまた、電極間の接合は、低温焼結金属で事前に接合することもできる。例えば、１００ｎｍ以下のサイズのＣｕ、Ａｇ、Ｎｉ、Ａｕなどの粒子を５％以上含有するペースト又はＳｎ−Ｃｕ二層粒子を含むペーストで電極同士を接続し、接合部周辺を高融点金属により電気メッキをすることができる。対向する広い面積の電極同士は、島状に複数接続しておくことが好適である。
さらにまた、Ｎｉの強磁性を利用することで、メッキ処理を効率よく行うことも可能となる。例えば、メッキ処理において被接続体を磁性体で挟み込む等の工夫をすることで、被接続体を固定することができる。また、被接続体が多少離れた状態であってもＮｉの磁性を利用して誘導することでＮｉメッキによる接続が可能となる。すなわち、電極部に球状やワイヤ状の凸上の形状を設けておくことで、磁力による引力を生じたときに点状で接触する状態をより効果的に形成することができる。
さらにまた、被接続体は上記に示したような電気的に接続される電気回路の電極に限定されず、低融点の半田や超音波接合、溶接により既に接合されている被接続体や、全く接合されていない電極以外の被接続体であってもよい。これらの被接続体の接合部分にＮｉでメッキ処理を行い、その後加熱処理を行うことで、被接続体を高融点で耐食性がよいＮｉで被覆して耐久性を挙げることができると共に、加熱処理により密着性を高めた強固な接続が可能になる。
さらにまた、本実施形態に係る電極接続方法を利用することで、図１に示すように、ＳｉＣチップ２の上面側の接続及び下面側の接続の双方をＮｉメッキにより接続することができるため、全体が耐熱性を有する構造で形成することが可能となる。また、どちらも同じ材料で同様のＮｉメッキ処理であるため、処理を同時に行うことができ、処理工程を簡素化することができると共に、品質を安定させることができる。例えば、具体的には、ダイオードの表面電極と裏面電極とを同時にリードフレームの対応する電極に接続する。従来は、それぞれの接続が個々のプロセスで行われていたが、本発明によれば１つのプロセスで同時に行うことができ、処理の効率化を図ることができる。
（本発明のその他の実施形態）
本実施形態に係る電極接続方法及び電極接続構造について、図７ないし図９を用いて説明する。図７は、本実施形態に係る電極接続構造においてインターポーザを用いる場合の構成を示す図である。図７（Ａ）において、基板電極１ａに凸状電極（ここでは、ボールバンプ７１）が直接接触して接続され、ＳｉＣチップ２の裏面電極にも凸状電極（ここでは、ボールバンプ７２）が直接接触して接続されており、それぞれのボールバンプ７１と７２は、インターポーザ７３を介して電気的に接続されている。このとき、基板電極１ａとＳｉＣチップ２の裏面電極とは略平行に対向して配設されており、ボールバンプ７１及び７２の中心を結ぶ直線と、基板電極１ａ面やＳｉＣチップ２の裏面電極面とが垂直にならない状態でインターポーザ７３を介したメッキ処理がなされる。
インターポーザ７３は、ポリイミド樹脂基板など絶縁基板７４と銅箔など導電箔７５とが一体となった平板状のもので、銅箔に配線パターンを形成することができるものを用いることができる。つまり、インターポーザ７３を介した電気的なやり取りが可能となる。ボールバンプ７１及び７２には銅ボールバンプなどが好適であり、バンプの径は３０μｍ以上７６０μｍ以下のものを用いることができる。
また、インターポーザ７３を挟む対応するボールバンプ７１及び７２のそれぞれの位置は、ボールバンプ７１及び７２の最小径以上ずらす。そうすることで、インターポーザ７３を介してメッキ処理により強固に接合したボールバンプ７１及び７２同士の応力を、当該インターポーザ７３により緩和させて有効に機能させることができる。導電箔７５の厚みは、１０μｍ以上であれば、導電インターポーザーとして利用することができる。また、図７（Ｂ）に示すように、導電箔７５は各電極同士の接続の回路に応じて、パターニングすることができる。さらに、配線幅と厚みを増加させることで、放熱性を上げることができる。すなわち、インターポーザ７３は、応力緩和、放熱、電極リードのいずれか、あるいはそれらの複数の目的として利用することができる。なお、図５に示したように、メッキ液の流通のためにインターポーザ７３に貫通孔を設けるようにしてもよい。
本実施形態に係る他の電極接続構造を図８に示す。図８は、本実施形態に係る電極接続構造においてチップの側面をコーティングする場合の構成を示す図である。図８に示すように、チップをメッキ液の中に浸漬する際に、チップの表面は絶縁材等の膜で覆われているが、側端面は剥き出しになっている場合がある。このような場合には、側端面がメッキ液により汚染される可能性があるため、図８に示すように、チップの側端面を絶縁材料でコーティングする。こうすることで、メッキ液によるチップの汚染を防止することができる。なお、絶縁材料によるコーティングは、チップの側端部のみに塗布するようにしてもよいし、感光性樹脂などで全体を覆い、マスクを使用して露光現像し、メッキすべき部分のみを露出させるようにしてもよい。耐熱性が十分でない樹脂などの場合は、メッキ終了後、溶剤などで除去するようにしてもよい。また、ポリイミド樹脂など耐熱性の高い樹脂を用いてチップ側端部のコーティングを行い、そのまま除去せずにパッケージングすることも可能である。
本実施形態に係る他の電極接続構造を図９に示す。図９は、本実施形態に係る電極接続構造においてメッキ処理時に配置を固定する場合の構成を示す図である。上記のように、電極、電極間に介在する凸状電極（例えば、ボールバンプ等）、インターポーザ等の被接合体は、メッキ処理の際にメッキ液に浸漬されるが、このとき位置決めされた状態で保持される必要がある。配置を保持については、チップ−チップ間又はチップ−基板間を上下方向から弾性力を有する部材で挟み、この弾性力を利用して配置を固定する方法を利用することができる。
導電性、放熱性を必要とする場合には、図９（Ａ）に示すように、Ｃｕ合金、Ｆｅ−Ｎｉ合金などの配線を用いて上下方向の弾性力により配置を固定すると共に、パッケージの構成部材の一部としても機能させることが可能となる。また、図９（Ｂ）、（Ｃ）に示すように、コの字上に形成された弾性部材（例えば、金属テープ等）の内部領域に各被接合体を個々の位置に固定し、全体を一括でメッキ処理した後にコの字状の側部を切断して分断することで、プロセスコストの低減を図ることができる。
以下、本発明に係る付記を示す。本発明に係る電極接続方法は、電気的に接続される電気回路の第１の電極と第２の電極とを、少なくとも一部直接又は間接的に接触させ、接触部分の周辺にメッキ液が流通した状態で、前記接触部分の周辺と前記第１の電極と前記第２の電極とをメッキし、前記接触部分に最も近い位置のメッキ積層表面が前記メッキ液に接触している状態で、前記第１の電極と前記第２電極とのぞれぞれに形成されるメッキ積層表面により遮蔽された空隙が生じる前にメッキ処理を停止させるものである。
このように、本発明に係る電極接続方法においては、電気的に接続される電気回路の第１の電極と第２の電極とを、少なくとも一部直接又は間接的に接触させ、接触部分の周辺にメッキ液が流通した状態で、前記接触部分の周辺と前記第１の電極と前記第２の電極とをメッキし、前記接触部分に最も近い位置のメッキ積層表面が前記メッキ液に接触している状態で、前記第１の電極と前記第２電極とのぞれぞれに形成されるメッキ積層表面により遮蔽された空隙が生じる前にメッキ処理を停止させるため、隙間のない密着した接続を可能にするという効果を奏する。
本発明に係る電極接続方法は、必要に応じて、前記第１の電極と前記第２の電極とが凸部を介して直接又は間接的に接触した状態で対向して配設され、メッキ処理により前記凸部の接触領域表面及び対向する前記第１の電極と前記第２の電極との表面からメッキによる積層が形成され、当該凸部の接触領域表面に近い領域から順次積層形成による空隙が充塞されるものである。
このように、本発明に係る電極接続方法においては、前記第１の電極と前記第２の電極とが凸部を介して直接又は間接的に接触した状態で対向して配設され、メッキ処理により前記凸部の接触領域表面及び対向する前記第１の電極と前記第２の電極との表面からメッキによる積層が形成され、当該凸部の接触領域表面に近い領域から順次積層形成による空隙が充塞されるため、凸部を介した接触部分から次第に空隙が充塞され、隙間のない密着した接続を可能にするという効果を奏する。
本発明に係る電極接続方法は、必要に応じて、前記接触部分が点状又は線状に保持されているものである。
このように、本発明に係る電極接続方法においては、接触部分が点状又は線状に保持されているため、点状又は線状の箇所を中心にメッキが広がり、より隙間のない密着した接続を可能にするという効果を奏する。
本発明に係る電極接続方法は、必要に応じて、前記メッキを行う材料が、融点が７００℃以上の金属又は当該金属の合金とするものである。
このように、本発明に係る電極接続方法においては、メッキが、融点が７００℃以上の金属又は当該金属の合金により行われるため、高温（例えば、３００℃程度以上）の場合であっても被接続体へのダメージをなくして使用することが可能になるという効果を奏する。
本発明に係る電極接続方法は、必要に応じて、前記メッキを行う材料が、ニッケル若しくはニッケル合金、又は、銅もしくは銅合金であり、接続される前記第１の電極及び前記第２の電極の表面の材料が、ニッケル若しくはニッケル合金、銅若しくは銅合金、金若しくは金合金、銀若しくは銀合金、又は、パラジウム若しくはパラジウム合金とするものである。
このように、本発明に係る電極接続方法においては、メッキが、ニッケル若しくはニッケル合金、銅もしくは銅合金、金若しくは金合金、銀若しくは銀合金、又は、パラジウム若しくはパラジウム合金で行われ、接続される前記第１の電極及び前記第２の電極の表面の材料が、ニッケル若しくはニッケル合金、銅若しくは銅合金、金若しくは金合金、銀若しくは銀合金、又は、パラジウム若しくはパラジウム合金であるため、１００℃以下のメッキ液中でメッキ処理が行われ、接合時における応力や熱による被接続体へのダメージをなくし、且つ、高融点の金属によりメッキ処理が行われることで、高温の状態でも動作することができるという効果を奏する。
本発明に係る電極接続方法は、必要に応じて、前記第１の電極と前記第２の電極とが、球状若しくは半球状の導電端子、又は、リード線を介して電気的に接続されているものである。
このように、本発明に係る電極接続方法においては、第１の電極と第２の電極とが、球状若しくは半球状の導電端子、又は、リード線を介して電気的に接続されているため、電極との接触部分を点状又は線状に保持することができ、隙間のない密着した接続を可能にするという効果を奏する。
本発明に係る電極接続方法は、必要に応じて、電気的に接続される前記第１の電極と前記第２の電極とが半導体素子電極と基板電極であり、前記半導体素子をＳｉＣ半導体、ＧａＮ半導体、パワー用Ｓｉ半導体若しくは太陽電池Ｓｉ半導体、又は、ＬＥＤ素子とするものである。
このように、本発明に係る電極接続方法においては、電気的に接続される前記第１の電極と前記第２の電極とが半導体素子電極と基板電極であり、前記半導体素子がＳｉＣ半導体、ＧａＮ半導体、パワー用Ｓｉ半導体若しくは太陽電池Ｓｉ半導体、又は、ＬＥＤ素子であるため、本発明の接続技術を用いて高温耐熱のデバイスを高温の状態で正常に動作させる、あるいは中高温で長期に使用することができるという効果を奏する。
本発明に係る電極接続方法は、必要に応じて、前記接触部分の周辺、前記第１の電極及び前記第２の電極のメッキ部分を加熱処理するものである。
このように、本発明に係る電極接続方法においては、接触部分の周辺、第１の電極及び第２の電極のメッキ部分を加熱処理するため、電極とメッキ金属との間で成分を拡散させて密着度を上げることができるという効果を奏する。また、加熱処理がなされることでメッキ部分の接続の歪みをなくすことができると共に、接続部の応力を緩和して劣化の防止を図ることができるという効果を奏する。
本発明に係る電極接続方法は、必要に応じて、前記第１の電極としての半導体素子の裏面電極と前記第２の電極としての基板電極とをダイボンディング構造で接続する場合に、前記基板電極に前記メッキ液が流通するための貫通孔が形成されているものである。
このように、本発明に係る電極接続方法においては、半導体素子の裏面電極と基板電極とをダイボンディング構造で接続する場合に、前記基板電極に前記メッキ液が流通するための貫通孔が形成されているため、メッキ液の流路を確保して隙間のない密着した接続を可能にするという効果を奏する。
なお、本発明は、上記電極接続方法により接続された電極接続構造として捉えることもできる。
本発明に係る電極接続方法は、必要に応じて、電気的接続に用いられる第１の電極及び第２の電極が、少なくとも一部が導通した状態で直接又は間接的に接触し、少なくとも前記第１の電極及び前記第２の電極の接触部分の周辺にメッキ液を流通させて当該接触部分を被覆するようにメッキし、当該メッキ後に加熱処理を行うことで前記第１の電極及び第２の電極を接続するものである。
このように、本発明に係る電極接続方法においては、電気的接続に用いられる第１の電極及び第２の電極が、少なくとも一部が導通した状態で直接又は間接的に接触し、少なくとも前記第１の電極及び前記第２の電極の接触部分の周辺にメッキ液を流通させて当該接触部分を被覆するようにメッキし、当該メッキ後に加熱処理を行うことで前記第１の電極及び第２の電極を接続するため、メッキにより電極の耐久性を挙げることができると共に、加熱処理により密着性を高めた強固な接続が可能になるという効果を奏する。
なお、このとき、ニッケル等の高融点の金属でメッキを行い、加熱処理はメッキ金属の融点（絶対温度）の１／３．５以上、２／３以下であることが好ましい。融点の１／３．５以下では、密着性向上の効果やメッキ時の歪除去の効果が少なく、２／３以上では、接続部界面の金属拡散が過剰に進行し、界面にカーケンダルボイドなどの欠陥が生じる懸念が高まるためである。
本発明に係る電極接続方法は、必要に応じて、前記第１の電極及び前記第２の電極が、間にインターポーザを挟んで夫々の前記第１の電極及び前記第２の電極に直接接触した状態の凸状電極を介して接続され、前記凸状電極の中心が、前記第１の電極及び／又は前記第２の電極の電極面に対して垂直な直線上にない状態で前記インターポーザを挟んでメッキ処理がなされるものである。
このように、本発明に係る電極接続方法においては、前記第１の電極及び前記第２の電極が、間にインターポーザを挟んで夫々の前記第１の電極及び前記第２の電極に直接接触した状態の凸状電極を介して接続され、前記凸状電極の中心が、前記第１の電極及び／又は前記第２の電極の電極面に対して垂直な直線上にない状態で前記インターポーザを挟んでメッキ処理がなされるため、インターポーザにより放熱効果を高めることができると共に、凸状電極の中心を電極面に対して垂直な直線上からずらすことで、凸状電極のメッキによる応力を緩和しつつ強固に接合することが可能になるという効果を奏する。
本発明に係る電極接続方法は、必要に応じて、前記第１の電極及び前記第２の電極が、チップ間の電極又はチップと基板との間の電極であり、前記第１の電極及び前記第２の電極が直接又は間接的に接触した状態で前記チップ及び／又は前記基板を上下方向から挟持し、当該第１の電極及び前記第２の電極が固定された状態でメッキ処理がなされるものである。
このように、本発明に係る電極接続方法においては、前記第１の電極及び前記第２の電極が、チップ間の電極又はチップと基板との間の電極であり、前記第１の電極及び前記第２の電極が直接又は間接的に接触した状態で前記チップ及び／又は前記基板を上下方向から挟持し、当該第１の電極及び前記第２の電極が固定された状態でメッキ処理がなされるため、接続関係を正確に保持したまま高精度なメッキ処理を行うことができるという効果を奏する。
本発明に係る電極接続方法は、必要に応じて、前記チップ及び／又は前記基板を上下方向から金属で挟持し、当該金属の弾性力で前記第１の電極及び前記第２の電極を固定すると共に、前記金属を配線として利用するものである。
このように、本発明に係る電極接続方法においては、前記チップ及び／又は前記基板を上下方向から金属で挟持し、当該金属の弾性力で前記第１の電極及び前記第２の電極を固定すると共に、前記金属を配線として利用するため、金属の弾性力を利用してメッキ処理における位置関係を正確に保持すると共に、それを電極として兼用することで小型化、省スペース化を実現することができるという効果を奏する。
本発明に係る電極接続方法は、必要に応じて、前記第１の電極及び前記第２の電極の少なくとも一方がチップ電極であり、当該チップ電極を有するチップの少なくとも側面部分が絶縁材料でコーティングされた状態で前記メッキ処理がなされるものである。
このように、本発明に係る電極接続方法においては、前記第１の電極及び前記第２の電極の少なくとも一方がチップ電極であり、当該チップ電極を有するチップの少なくとも側面部分が絶縁材料でコーティングされた状態で前記メッキ処理がなされるため、チップの側面方向からのメッキ液の流入によるチップの損傷を防止することができるという効果を奏する。
本発明に係る接続構造は、電気的接続に用いられる第１の電極及び第２の電極が、夫々半田又は低温焼結金属により導通した状態で直接又は間接的に接続され、当該接続されている部分をメッキで被覆した接合部が形成されているものである。
このように、本発明に係る接続構造においては、メッキする前工程として、個々の電極の位置を固定するあるいは電気的に同電位とするために電極夫々を半田付け又は低温焼結金属により接続され、当該接続されている部分をメッキで被覆した接合部が形成されているため、半田付け又は低温焼結金属とメッキの２重構造による強固で耐熱性を有する接続が可能になると共に、表面は高融点で耐食性がよい接続構造を実現することができるという効果を奏する。なお、この半田付けは、中心部を銅、外部を半田で被覆したボールあるいはワイヤで両電極間を接続されているものに、その表面を含む面をメッキすることも有効である。
また、半導体チップの端面などメッキ液が付着あるいはメッキ成長を防止する必要がある箇所には事前に、メッキ液に耐性を有するレジスト処理などによりマスクをしておくことも可能である。レジスト塗布方法としては、ノズルから吐出する方法や、全体を樹脂で覆い、メッキ必要箇所を溶剤で除去する方法が適用できる。接続の微細化が重要なＬＳＩの接続とは異なり、パワーデバイスや太陽電池回路等は、１デバイスあたりの電極数は少なく、パターンも微細ではないので、これらのレジスト処理が必要な場合でも、比較的低コストで簡便な設備で可能である。
本発明に係る電極接続方法及び電極接続構造に関する実験をいくつか行った。
（１）シェアテスト
メッキ接合を行った試料が高耐熱性を有しているか検証するため、加熱後のシェア強度変化を測定した。測定を行う試料は、Ｃｕワイヤ（１ｍｍＬ、φ：１７２μｍ）をＣｕ板と接触させ、接触部分の周辺にメッキ液を十分に流通させた状態でメッキを１５分又は３０分行ったものをそれぞれ使用した。その後、アルゴン（Ａｒ）雰囲気中で加熱を行い、最後にシェアテストを実施した。シェアテストは各温度で９回実施し、シェア破断強度の平均値を求めた。図１０にその実験系及び結果を示す。図１０（Ａ）は実験系の模式図、図１０（Ｂ）はシェアテストの結果を示す。図１０（Ａ）に示すように、シェアテストはＣｕワイヤをＣｕ板から剥ぎ取る場合の力を測定した。
図１０（Ｂ）に示す結果から、メッキ時間１５、３０分ともに５００℃の加熱後も十分なシェア強度が得られた。また、両者ともに加熱温度が上昇するにつれてシェア強度が上昇しているが、これは拡散によってＣｕ−Ｎｉの合金化が進み、界面の密着性及び強度が上昇したためである。また界面に第二相は形成されていない。よって、高温環境でのＣｕ−Ｎｉメッキ接合部の劣化は生じないことが明らかとなった。
（２）Ｃｕ−Ｎｉ合金の抵抗値測定
高温環境にてＣｕ−Ｎｉ合金層が形成された場合、抵抗値の上昇が考えられることから、合金化による抵抗値変化を測定した。測定を行う試料は、図１１（Ａ）に示すように、Ｃｕワイヤ（３０ｍｍ、φ：１７２μｍ）にメッキを３０分行い、Ａｒ雰囲気中で加熱後、四端子法による抵抗値測定を行った。ここでメッキ後のワイヤ径は２２２μｍとなり、測定を行うワイヤの電圧測定端子間の長さは１２．５ｍｍとした。その時の結果を図１１（Ｂ）に示す。
図１１（Ｂ）に示されるように、拡散が温度上昇に伴い進行し、抵抗値もそれに伴い上昇している。しかしながら５００℃（６０分）加熱でも抵抗上昇値が約１０％程度とかなり小さいことから、問題となる欠陥は生じていないと考えられることが判明した。
（３）Ｃｕ−Ｎｉ拡散状態の解析
Ｃｕ−Ｎｉの拡散の状態を確認するため、Ｃｕ板上にＮｉメッキを行い、加熱後の試料断面の様子をＳＥＭ（２．５ｋ倍）（Ｓ−３４００Ｎ、日立製作所製）にて観察した。さらに界面の元素分布をＥＤＸライン分析によって測定した。その結果を図１２に示す。この時のＳＥＭ画像内の濃度分布の位置をグラフと対応させて表示している。図１２（Ａ）は未加熱の場合の結果、図１２（Ｂ）は３００℃で６０分加熱した場合の結果、図１２（Ｃ）は５００℃で６０分加熱した場合の結果を示している。
図１２（Ａ）の未加熱の場合と図１２（Ｂ）の３００℃加熱の場合を比較すると、どちらもインターフェースを境にＣｕとＮｉの濃度が完全に反転しており、濃度分布にほとんど変化は見られないが、図１２（Ｃ）の５００℃加熱の場合ではその濃度分布から約５μｍ程のＣｕ−Ｎｉ合金層が形成されていることが確認できる。
（４）ＳｉＣダイオードチップを用いた高温回路動作試験及び評価
これまで述べてきた接合技術がパワーデバイスの相互接続技術として実用的であるかを評価するため、ＳｉＣ−ＳＢＤチップ（１２００Ｖ，１５Ａ，ＳｉＣＥＤ社製）を用いた高温環境での回路動作試験を行った。このチップはアノード面にＡｌ電極、カソード面にＡｇ電極が形成されており、厚さは３６５μｍ、大きさは２．７ｍｍ×２．７ｍｍである。
作成する試料は、図１３（Ａ）に示すように、チップ電極と基板リード電極の接合にＮｉマイクロメッキを用い、Ａｌ電極とＣｕ板とをＣｕワイヤで繋ぐように接合し（メッキ時間３０分）、ダイボンディングにもＮｉマイクロメッキを用いてＡg電極側とリードフレームを接合した。
なお、Ａｌ電極側は、事前に無電解Ｎｉメッキ処理により、表面はＮｉ層となっている。すなわち、上記のように表面がアルミニウム合金で形成されている場合には、接続用電気メッキの被着が可能となるように、無電解メッキにより事前にニッケル膜を形成することが好適である。その際の無電解メッキの厚みは０．１μｍ以上、１０μｍ以下が好ましい。０．１μｍ未満では、表面欠陥などがある場合に接続不良となる可能性が高く、１０μｍより大きい場合は、無電解メッキに時間がかかり実用的に不利となる。また、物理蒸着等により、Ｔｉ、ＴｉＷ、Ｎｉ、ＮｉＶなどの金属又はその合金の膜を形成することが好適である。最上層には、銅、パラジウム、ニッケル、金、ロジウム、銀を主成分とする膜を形成することが好適である。いずれも厚みは、０．０５μｍ以上、３μｍ以下が好ましい。この場合、無電解メッキの場合と比較して均一に膜形成が可能であるが、３μｍ超の膜形成は、コスト高となり実用性に不利となる。
そして接合を行った試料をホットプレート上で各加熱温度（２０〜３００℃）一定で加熱を行いながら、Ａｇ板からＣｕ板へ電流を流す。そして図１３（Ｂ）の回路図のように電源電圧（０〜１５Ｖ）を変化させ、ダイオードの電圧（ＶＤ）・電流（ＩＤ）を測定した。その時の結果を図１３（Ｃ）に示す。この結果から、３００℃の高温環境においてダイオードＶ−Ｉ特性が確認され、接合部の劣化は確認されなかった。よって加熱による接合部の劣化もなく、３００℃程度の高温動作が可能であるということが明らかとなった。
（５）ビッカース硬さの測定
メッキによって蒸着されたＮｉ薄膜表面が熱によってどのような硬度変化を起こすかを調べるため、ビッカース硬さ測定試験を実施した。測定にはマイクロビッカース硬度計（ＭＨＴ−１、松沢精機株式会社）を使用した。ビッカース硬さは硬度を表わす尺度の一つで、ＨＶで表される。正四角錐型の圧子を試料表面に押し込み、荷重を除いたあとに残った圧痕の面積から換算表によって硬度を割り出す。圧痕は試料が硬ければ小さく、柔らかければ大きくなる。
使用する試料は、まず銅板（５×５ｍｍ）上に、メッキ時間１５分、電流密度は５Ａ／ｄｍ２でメッキを行った。次に高温管状炉を用いてアルゴン雰囲気中加熱を行った。加熱温度は１００，２００，３００，４００，５００℃とし、加熱時間は１時間とした。そして、ビッカース硬さ測定時の圧子の荷重は１００ｇ、荷重をかける時間は１５秒とした。また測定は、比較のため未加熱（２０℃）の試料も用意し、各温度で５点をデータとして取り、その平均値をとることとした。
測定結果を図１４に示す。測定箇所により誤差はあるが、加熱温度の上昇に伴い硬度が低下していることが分かる。これは加熱によってＮｉ薄膜がアニーリングされたためだと考えられ、本来、金属内部には多くの格子欠陥が存在しているが、加熱することで原子が移動し、再配列が起こるため欠陥が減少する。すると、転位が動きやすくなるため、ひずみが無くなり、金属の内部応力が緩和される。そして内部応力の緩和は接合部の信頼性向上に繋がる。
なお、アニーリングを行う場合の加熱温度は、上述したように、メッキ処理に用いた金属の融点（Ｋ）の１／３．５程度以上が好ましく、その際の加熱時間は、例えば、レーザアニールの場合の数秒〜通常の加熱の場合の数十分程度が好ましい。
以上のような実験結果から、Ｎｉマイクロメッキ接合をパワーデバイスのチップと基板電極との接合、チップの基板へのダイボンディング接合に適用できることが示された。また、低温での接合で、３００℃以上での高温での接合信頼性を確保できることが実証された。さらに、Ｃｕ−Ｎｉのメッキ接合部は５００℃での拡散試験において、接合部の劣化は見られなかった。
さらにまた、ＳｉＣダイオードチップを使用して、チップと基板電極との接合、ダイボンディングによる接合ともに、Ｎｉメッキ接合を同時に行い、高温環境３００℃程度での正常な動作を確認した。以上のことから、マイクロメッキによるチップ接合技術は、高耐熱性を有し、簡便で且つ低コスト、高信頼性を確保できる実装技術として、実用化が十分可能である。
１ａ，１ｂ 基板電極
２ ＳｉＣチップ
３ パッド
４ リード線
５ Ｎｉメッキ層

Claims (2)

  1. 電気的に接続される電気回路において、第１の電極と第２の電極とを空間を有するように対向して配設し、当該空間内で少なくとも一部直接又は間接的に前記第１の電極と前記第２の電極とを接触させ、
    少なくとも前記第１の電極と前記第２の電極との接触箇所の周辺近傍にメッキ液が流通した状態で、前記接触箇所と当該接触箇所の周辺近傍の領域、及び前記接触箇所の周辺近傍と離隔した領域を含む前記空間内の前記第１の電極と前記第２の電極とをメッキし、
    前記空間内の、前記接触箇所から空間を充塞していくメッキ積層表面と前記第１の電極及び前記第２の電極の対向する表面にそれぞれ形成されるメッキ積層表面とが前記メッキ液に接触しており、
    前記空間内の前記接触箇所の周辺近傍から離隔した領域において、前記第１の電極の表面に形成される前記メッキ積層表面と前記第２の電極の表面に形成される前記メッキ積層表面とが接触することで形成される遮蔽された空隙が生じる前にメッキ処理を停止させることを特徴とする電極接続方法。
  2. 電気回路の第１の電極と第２の電極とが電気的に接続される電極接続構造であって、
    前記第１の電極と第２の電極とが、少なくとも１つの接触箇所で直接又は間接的に接触した状態で対向して配設され、
    メッキ処理による積層が、前記接触箇所の周辺近傍と、対向する前記第１の電極及び前記第２の電極のそれぞれの対向する表面とに形成されており、
    前記対向する第１の電極と第２の電極との対向する表面の領域であって、前記接触箇所の周辺近傍の領域はメッキ処理による積層で充塞されて接続されており、前記接触箇所の周辺近傍の領域から離隔した部分は、対向する第１の電極と第２の電極のそれぞれの対向する表面のメッキ処理による積層により遮蔽された空隙が形成されない形で分離されていることを特徴とする電極接続構造。

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Families Citing this family (12)

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Publication number Priority date Publication date Assignee Title
DE102015210061A1 (de) 2015-06-01 2016-12-01 Siemens Aktiengesellschaft Verfahren zur elektrischen Kontaktierung eines Bauteils und Bauteilmodul
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CN109075089B (zh) * 2016-05-18 2021-12-17 三菱电机株式会社 电力用半导体装置及其制造方法
JP6897038B2 (ja) * 2016-09-16 2021-06-30 昭和電工マテリアルズ株式会社 接続構造体及びその製造方法、端子付き電極の製造方法並びにこれに用いられる導電粒子、キット及び転写型
DE102017211619A1 (de) * 2017-02-08 2018-08-09 Siemens Aktiengesellschaft Verfahren zur elektrischen Kontaktierung und Leistungsmodul
TWI677958B (zh) 2017-05-19 2019-11-21 學校法人早稻田大學 功率半導體模組裝置及功率半導體模組製造方法
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JP7198479B2 (ja) * 2018-08-31 2023-01-04 学校法人早稲田大学 半導体素子接合構造、半導体素子接合構造の生成方法及び導電性接合剤
JPWO2022186167A1 (ja) * 2021-03-01 2022-09-09
JP2022133193A (ja) * 2021-03-01 2022-09-13 学校法人早稲田大学 接合構造体及びその製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08255865A (ja) * 1995-03-17 1996-10-01 Toshiba Corp 半導体装置およびその製造方法
JP2001274201A (ja) * 2000-03-27 2001-10-05 Toshiba Corp 電子デバイス及びその製造方法
JP2004363573A (ja) * 2003-05-15 2004-12-24 Kumamoto Technology & Industry Foundation 半導体チップ実装体およびその製造方法
JP2007335473A (ja) * 2006-06-12 2007-12-27 Nissan Motor Co Ltd 半導体素子の接合方法および半導体装置
JP2008042104A (ja) * 2006-08-10 2008-02-21 Sony Corp 電子装置及びその製造方法
US20090230519A1 (en) * 2008-03-14 2009-09-17 Infineon Technologies Ag Semiconductor Device
JP2011012314A (ja) * 2009-07-02 2011-01-20 Ne Chemcat Corp 電極形成用金めっき浴及びそれを用いた電極形成方法
JP2011233733A (ja) * 2010-04-28 2011-11-17 Sony Corp 素子の基板実装方法、および、その基板実装構造

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03190251A (ja) * 1989-12-20 1991-08-20 Sanyo Electric Co Ltd 半導体装置
JP2868943B2 (ja) * 1991-11-29 1999-03-10 新日本製鐵株式会社 半導体素子電極とリードとの接続構造および実装方法
TW277152B (ja) * 1994-05-10 1996-06-01 Hitachi Chemical Co Ltd
JPH0982759A (ja) * 1995-09-18 1997-03-28 Casio Comput Co Ltd 突起電極を有する基板の接続方法
JP2000260912A (ja) * 1999-03-05 2000-09-22 Fujitsu Ltd 半導体装置の実装構造及び半導体装置の実装方法
EP1069213A3 (en) * 1999-07-12 2004-01-28 Applied Materials, Inc. Optimal anneal technology for micro-voiding control and self-annealing management of electroplated copper
JP2001332644A (ja) * 2000-05-19 2001-11-30 Sony Corp 半導体装置及びインターポーザー、並びにこれらの製造方法
JP4019985B2 (ja) * 2003-03-19 2007-12-12 セイコーエプソン株式会社 半導体装置の製造方法、回路基板、及び電子機器
JP2005039226A (ja) * 2003-06-24 2005-02-10 Ngk Spark Plug Co Ltd 中継基板、半導体素子付き中継基板、中継基板付き基板、半導体素子と中継基板と基板とからなる構造体
JP2007048990A (ja) * 2005-08-11 2007-02-22 Sumitomo Electric Ind Ltd 半導体装置
JP4783692B2 (ja) * 2006-08-10 2011-09-28 新光電気工業株式会社 キャパシタ内蔵基板及びその製造方法と電子部品装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08255865A (ja) * 1995-03-17 1996-10-01 Toshiba Corp 半導体装置およびその製造方法
JP2001274201A (ja) * 2000-03-27 2001-10-05 Toshiba Corp 電子デバイス及びその製造方法
JP2004363573A (ja) * 2003-05-15 2004-12-24 Kumamoto Technology & Industry Foundation 半導体チップ実装体およびその製造方法
JP2007335473A (ja) * 2006-06-12 2007-12-27 Nissan Motor Co Ltd 半導体素子の接合方法および半導体装置
JP2008042104A (ja) * 2006-08-10 2008-02-21 Sony Corp 電子装置及びその製造方法
US20090230519A1 (en) * 2008-03-14 2009-09-17 Infineon Technologies Ag Semiconductor Device
JP2011012314A (ja) * 2009-07-02 2011-01-20 Ne Chemcat Corp 電極形成用金めっき浴及びそれを用いた電極形成方法
JP2011233733A (ja) * 2010-04-28 2011-11-17 Sony Corp 素子の基板実装方法、および、その基板実装構造

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