JP4783692B2 - キャパシタ内蔵基板及びその製造方法と電子部品装置 - Google Patents
キャパシタ内蔵基板及びその製造方法と電子部品装置 Download PDFInfo
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- JP4783692B2 JP4783692B2 JP2006217955A JP2006217955A JP4783692B2 JP 4783692 B2 JP4783692 B2 JP 4783692B2 JP 2006217955 A JP2006217955 A JP 2006217955A JP 2006217955 A JP2006217955 A JP 2006217955A JP 4783692 B2 JP4783692 B2 JP 4783692B2
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- 239000000758 substrate Substances 0.000 title claims description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000003990 capacitor Substances 0.000 claims description 147
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 115
- 229910052802 copper Inorganic materials 0.000 claims description 115
- 239000010949 copper Substances 0.000 claims description 115
- 229910052751 metal Inorganic materials 0.000 claims description 101
- 239000002184 metal Substances 0.000 claims description 101
- 239000011347 resin Substances 0.000 claims description 96
- 229920005989 resin Polymers 0.000 claims description 96
- 238000007747 plating Methods 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 37
- 229910000679 solder Inorganic materials 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 21
- 238000009713 electroplating Methods 0.000 claims description 16
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000003825 pressing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 228
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 239000010931 gold Substances 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910017107 AlOx Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
図2〜図7は本発明の第1実施形態のキャパシタ内蔵基板の製造方法を示す断面図、図8は同じくキャパシタ内蔵基板を示す断面図である。
図10は本発明の第2実施形態のキャパシタ内蔵基板を示す断面図、図11は同じくキャパシタ内蔵基板に半導体チップが実装して構成される電子部品装置を示す断面図である。図10に示すように、第2実施形態のキャパシタ内蔵基板2では、複数のキャパシタC及び貫通電極Tの他に、抵抗部Rが内蔵されている。図10の例では、第1実施形態の図8の右側の貫通電極Tが抵抗部Rとなっている。
図12〜図14は本発明の第3実施形態のキャパシタ内蔵基板の製造方法を示す断面図である。図15は同じくキャパシタ内蔵基板を示す断面図である。第3実施形態の特徴は、銅板に設けた凹部にはんだ層を充填しておき、はんだ層に銅ポストを埋め込むことに基づいて、最終的にはんだ層を銅ポストの被覆層として利用することにある。第3実施形態では、第1実施形態と同一工程においてはその詳しい説明を省略する。
Claims (10)
- 厚み方向に貫通する開口部を備えたベース樹脂層と、
前記ベース樹脂層を貫通して設けられて前記開口部に埋め込まれ、前記開口部から上側及び下側に突出する突出部をそれぞれ備え、前記ベース樹脂層の一方の面側の前記突出部が接続部となる第1電極と、前記ベース樹脂層の他方の面側の前記第1電極の前記突出部を被覆する誘電体層と、前記誘電体層を被覆する第2電極とから構成されて、前記ベース樹脂層を貫通した状態で横方向に並んで配置された複数のキャパシタと、
前記ベース樹脂層を貫通して設けられ、前記ベース樹脂層の両面側から突出する突出部をそれぞれ備えた貫通電極と、
ベース樹脂層の前記他方の面側に形成され、前記キャパシタの前記第2電極及び前記貫通電極の一端側に電気的に接続されたビルドアップ配線とを有することを特徴とするキャパシタ内蔵基板。 - 前記ベース樹脂層を貫通して設けられ、前記ベース樹脂層の両面側から突出する突出部をそれぞれ備え、前記ベース樹脂層の一方の面側の前記突出部が接続部となる第1電極と、前記ベース樹脂層の他方の面側の前記第1電極を被覆する絶縁層と、前記絶縁層を被覆する第2電極とにより構成される抵抗部をさらに有し、前記抵抗部の前記第2電極が前記ビルドアップ配線に接続されていることを特徴とする請求項1に記載のキャパシタ内蔵基板。
- 前記ベース樹脂層の他方の面側に配置された前記突出部は、先端部が凸状曲面となっていることを特徴とする請求項1又は2に記載のキャパシタ内蔵配線基板。
- 請求項1乃至3のいずれか一項に記載のキャパシタ内蔵基板と、
前記第1電極の前記接続部及び前記貫通電極の他端側に接続されて実装された半導体チップとを有することを特徴とする電子部品装置。 - 一方の面に複数の金属ポストが立設されたベース樹脂層と、一方の面に柔軟金属層が形成された金属支持体とを用意する工程と、
前記金属支持体上の前記柔軟金属層に、前記ベース樹脂層上の前記金属ポストを押し込んで前記金属支持体と前記ベース樹脂層とを貼り合わせることにより、前記金属ポストを前記柔軟金属層に埋め込む工程と、
所要の金属ポスト上の前記ベース樹脂層の部分に第1めっき用開口部を形成する工程と、
前記金属支持体、前記柔軟金属層及び前記金属ポストをめっき給電経路に利用する電解めっきにより、前記第1めっき開口部に前記ベース樹脂層の上面から突出する金属バンプを形成して前記金属ポスト及び前記金属バンプから構成される第1電極を得る工程と、
前記第1電極を被覆する誘電体層を形成する工程と、
前記誘電体層を被覆する第2電極を形成してキャパシタを得る工程と、
前記キャパシタの上方に、前記キャパシタの第2電極に電気的に接続されるビルドアップ配線を形成する工程と、
前記金属支持体及び前記柔軟金属層を除去して前記金属ポストを露出させる工程とを有することを特徴とするキャパシタ内蔵基板の製造方法。 - 一方の面側に金属ポストが立設されたベース樹脂層と、前記金属ポストに対応する部分に凹部が形成され、前記凹部に柔軟金属層が埋め込まれた金属支持体とを用意する工程と、
前記金属支持体に形成された前記柔軟金属層に、前記ベース樹脂層上の前記金属ポストを押し込んで前記金属支持体と前記ベース樹脂層とを貼り合わせることにより、前記金属ポストを前記柔軟金属に埋め込む工程と、
所要の前記金属ポスト上の前記ベース樹脂層の部分にキャパシタ形成用の第1めっき用開口部を形成する工程と、
前記金属支持体、前記柔軟金属層及び前記金属ポストをめっき給電経路に利用する電解めっきにより、前記第1めっき開口部に前記ベース樹脂層の上面から突出する金属バンプを形成して前記金属ポスト及び前記金属バンプから構成される第1電極を得る工程と、
前記第1電極を被覆する誘電体層を形成する工程と、
前記誘電体層を被覆する第2電極を形成してキャパシタを得る工程と、
前記キャパシタの上方に、前記キャパシタの前記第2電極に接続されるビルドアップ配線を形成する工程と、
前記金属支持体を除去して前記柔軟金属層で被覆された前記金属ポストを露出させる工程とを有することを特徴とするキャパシタ内蔵基板の製造方法。 - 前記複数の金属ポスト上の前記ベース樹脂層の各部分には前記キャパシタの形成領域の他に貫通電極の形成領域が画定されており、
前記キャパシタを得る工程の後であって、ビルドアップ配線を形成する工程の前に、
前記金属ポスト上の前記貫通電極を形成するための前記ベース樹脂層の部分に第2めっき用開口部を形成する工程と、
前記第2めっき用開口部を含む領域に開口部が設けられたレジストを形成して前記キャパシタを前記レジストで被覆する工程と、
前記金属支持体、前記柔軟金属層及び前記金属ポストをめっき給電経路に利用する電解めっきにより、前記第2めっき用開口部に前記ベース樹脂層の上面から突出する金属バンプを形成して前記金属ポスト及び前記金属バンプから構成される前記貫通電極を得る工程と、
前記レジストを除去する工程とをさらに有し、
前記ビルドアップ配線は前記貫通電極の一端側に接続されることを特徴とする請求項5又は6に記載のキャパシタ内蔵基板の製造方法。 - 前記複数の金属ポスト上の前記ベース樹脂層の各部分には前記キャパシタの形成領域の他に抵抗部の形成領域が画定されており、
前記キャパシタを得る工程の後であって、ビルドアップ配線を形成する工程の前に、
前記金属ポスト上の前記抵抗部を形成するための前記ベース樹脂層の部分に第2めっき用開口部を形成する工程と、
前記第2めっき用開口部を含む領域に開口部が設けられたレジストを形成して前記キャパシタを前記レジストで被覆する工程と、
前記金属支持体、前記柔軟金属層及び前記金属ポストをめっき給電経路に利用する電解めっきにより、前記第2めっき用開口部に前記ベース樹脂層の上面から突出する金属バンプを形成して前記金属ポスト及び前記金属バンプから構成される第1電極を得る工程と、
前記第1電極を被覆する絶縁層を形成する工程と、
前記絶縁層を被覆する第2電極を形成して前記抵抗部を得る工程と、
前記レジストを除去する工程とをさらに有し、
前記ビルドアップ配線は前記抵抗部の前記第2電極に接続されることを特徴とする請求項5又は6に記載のキャパシタ内蔵基板の製造方法。 - 前記金属支持体は銅からなって、前記柔軟金属層は錫からなり、
前記金属支持体及び前記柔軟金属層を除去する工程の後に、露出する前記金属ポストを被覆するはんだ層を形成する工程をさらに有することを特徴とする請求項5に記載のキャパシタ内蔵基板の製造方法。 - 前記金属支持体は銅からなり、前記柔軟金属層ははんだからなることを特徴とする請求項6に記載のキャパシタ内蔵基板の製造方法。
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JP2008042118A (ja) | 2008-02-21 |
CN101123854A (zh) | 2008-02-13 |
US7936568B2 (en) | 2011-05-03 |
EP1887622A3 (en) | 2008-05-07 |
US20080291649A1 (en) | 2008-11-27 |
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