JP4912992B2 - キャパシタ内蔵基板及びその製造方法 - Google Patents
キャパシタ内蔵基板及びその製造方法 Download PDFInfo
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- JP4912992B2 JP4912992B2 JP2007236663A JP2007236663A JP4912992B2 JP 4912992 B2 JP4912992 B2 JP 4912992B2 JP 2007236663 A JP2007236663 A JP 2007236663A JP 2007236663 A JP2007236663 A JP 2007236663A JP 4912992 B2 JP4912992 B2 JP 4912992B2
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- 239000000758 substrate Substances 0.000 title claims description 104
- 238000004519 manufacturing process Methods 0.000 title description 18
- 239000003990 capacitor Substances 0.000 claims description 98
- 239000004020 conductor Substances 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 244000126211 Hericium coralloides Species 0.000 claims description 4
- 238000000034 method Methods 0.000 description 35
- 239000010949 copper Substances 0.000 description 28
- 230000008569 process Effects 0.000 description 14
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000005498 polishing Methods 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- 229910003087 TiOx Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/236—Terminals leading through the housing, i.e. lead-through
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/43—Electric condenser making
- Y10T29/435—Solid dielectric type
Description
図1は本発明の第1の実施形態に係るキャパシタ内蔵基板の構成を概略的に示したものであり、(a)は平面的に見た構造、(b)は(a)におけるA−A’線に沿って見たときの断面構造をそれぞれ示している。
図5は本発明の第2の実施形態に係るキャパシタ内蔵基板の構成を概略的に示したものであり、(a)は平面的に見た構造、(b)は(a)におけるP部を拡大して見たときの平面構造、(c)は(b)におけるB−B’線に沿って見たときの断面構造をそれぞれ示している。
図6は本発明の第3の実施形態に係るキャパシタ内蔵基板の構成を概略的に示したものであり、(a)は平面的に見た構造、(b)は(a)におけるC−C’線に沿って見たときの断面構造をそれぞれ示している。
11,21,31…シリコン(Si)基板(基材)、
12,13,22(a,b),23(a,b),32,33,36…電極(導体)、
14,24,34…誘電体層(絶縁層)、
18,26,27,47,49…配線パターン(導体)、
25,35,46,48…絶縁層、
40…モジュール、
45…はんだバンプ(外部接続端子)、
50…ソルダレジスト層(保護膜)。
Claims (4)
- 所要の厚さを有したシリコンからなる基材と、該基材の厚さ方向にそれぞれ所要のパターン形状で貫通形成され、かつ二酸化シリコンからなる絶縁層を介在させて対向配置された1対の導体とを備え、
前記1対の導体は、それぞれ櫛形パターン形状で、かつ櫛歯部分が互いに入れ子状の態様で対向配置されていることを特徴とするキャパシタ内蔵基板。 - 前記1対の導体は、それぞれ平面的に見て複数個の部分に分割形成され、かつ各々の導体の分割された隣合う部分が電気的に接続されていることを特徴とする請求項1に記載のキャパシタ内蔵基板。
- 前記1対の導体の少なくとも一方の導体内に、当該導体から電気的に絶縁された別の導体が前記基材に貫通形成されていることを特徴とする請求項1に記載のキャパシタ内蔵基板。
- 所要の厚さを有したシリコンからなる基材の厚さ方向に櫛形パターン形状で貫通する開口部を形成する工程と、
前記開口部の内壁面上に二酸化シリコンからなる絶縁層を形成する工程と、
前記絶縁層で覆われた開口部内を導体で充填する工程と、
前記基材の前記絶縁層間に介在している部分を除去する工程と、
除去された部分を導体で充填する工程とを含むことを特徴とするキャパシタ内蔵基板の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007236663A JP4912992B2 (ja) | 2007-09-12 | 2007-09-12 | キャパシタ内蔵基板及びその製造方法 |
TW097130669A TWI372586B (en) | 2007-09-12 | 2008-08-12 | Capacitor-embedded substrate and method of manufacturing the same |
KR1020080079720A KR101414751B1 (ko) | 2007-09-12 | 2008-08-14 | 커패시터 내장 기판 및 그 제조 방법 |
US12/191,454 US8405953B2 (en) | 2007-09-12 | 2008-08-14 | Capacitor-embedded substrate and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007236663A JP4912992B2 (ja) | 2007-09-12 | 2007-09-12 | キャパシタ内蔵基板及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009070969A JP2009070969A (ja) | 2009-04-02 |
JP4912992B2 true JP4912992B2 (ja) | 2012-04-11 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007236663A Active JP4912992B2 (ja) | 2007-09-12 | 2007-09-12 | キャパシタ内蔵基板及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8405953B2 (ja) |
JP (1) | JP4912992B2 (ja) |
KR (1) | KR101414751B1 (ja) |
TW (1) | TWI372586B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010027833A1 (de) * | 2010-04-15 | 2011-10-20 | E.G.O. Elektro-Gerätebau GmbH | Kochgefäß, Heizeinrichtung und Kochsystem |
FR2961345A1 (fr) * | 2010-06-10 | 2011-12-16 | St Microelectronics Tours Sas | Circuit integre passif |
JP5732357B2 (ja) * | 2011-09-09 | 2015-06-10 | 新光電気工業株式会社 | 配線基板、及び半導体パッケージ |
CN102573292B (zh) * | 2012-01-04 | 2014-07-23 | 桂林电子科技大学 | 一种内埋置电阻器的印刷电路板及其制造方法 |
CN102548211B (zh) * | 2012-01-04 | 2015-03-11 | 桂林电子科技大学 | 一种内埋置电容器的印刷电路板及其制造方法 |
US9159718B2 (en) * | 2013-03-08 | 2015-10-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Switched capacitor structure |
US9293521B2 (en) * | 2012-03-02 | 2016-03-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Concentric capacitor structure |
US9380705B2 (en) * | 2013-03-14 | 2016-06-28 | Analog Devices, Inc. | Laterally coupled isolator devices |
JPWO2017026195A1 (ja) * | 2015-08-11 | 2018-05-10 | 株式会社村田製作所 | キャパシタ内蔵基板の製造方法 |
US10164614B2 (en) | 2016-03-31 | 2018-12-25 | Analog Devices Global Unlimited Company | Tank circuit and frequency hopping for isolators |
US10184189B2 (en) | 2016-07-18 | 2019-01-22 | ECSI Fibrotools, Inc. | Apparatus and method of contact electroplating of isolated structures |
CN110622305B (zh) * | 2019-02-18 | 2021-03-23 | 长江存储科技有限责任公司 | 电容器结构及其形成方法 |
US11031373B2 (en) | 2019-03-29 | 2021-06-08 | International Business Machines Corporation | Spacer for die-to-die communication in an integrated circuit |
US20220359651A1 (en) * | 2021-05-06 | 2022-11-10 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and method of forming the same |
Family Cites Families (14)
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US4153988A (en) * | 1977-07-15 | 1979-05-15 | International Business Machines Corporation | High performance integrated circuit semiconductor package and method of making |
JPH11204727A (ja) * | 1998-01-07 | 1999-07-30 | Toshiba Corp | 半導体装置およびその製造方法 |
KR100512688B1 (ko) * | 2003-11-21 | 2005-09-07 | 대덕전자 주식회사 | 캐패시터 내장형 인쇄 회로 기판 제조 방법 |
JP4387231B2 (ja) * | 2004-03-31 | 2009-12-16 | 新光電気工業株式会社 | キャパシタ実装配線基板及びその製造方法 |
JP2006005233A (ja) * | 2004-06-18 | 2006-01-05 | Shinko Electric Ind Co Ltd | キャパシタ、キャパシタ内蔵基板、およびキャパシタの製造方法 |
JP4575071B2 (ja) * | 2004-08-02 | 2010-11-04 | 新光電気工業株式会社 | 電子部品内蔵基板の製造方法 |
KR100632554B1 (ko) * | 2004-12-30 | 2006-10-11 | 삼성전기주식회사 | 커패시터 내장형 인쇄회로기판 및 그 제조방법 |
KR100867038B1 (ko) * | 2005-03-02 | 2008-11-04 | 삼성전기주식회사 | 커패시터 내장형 인쇄회로기판 및 그 제조방법 |
KR100716810B1 (ko) * | 2005-03-18 | 2007-05-09 | 삼성전기주식회사 | 블라인드 비아홀을 구비한 커패시터 내장형 인쇄회로기판및 그 제조 방법 |
US7640655B2 (en) * | 2005-09-13 | 2010-01-05 | Shinko Electric Industries Co., Ltd. | Electronic component embedded board and its manufacturing method |
JP2007110017A (ja) * | 2005-10-17 | 2007-04-26 | Shinko Electric Ind Co Ltd | キャパシタ内蔵基板及びその製造方法 |
JP4720462B2 (ja) | 2005-11-30 | 2011-07-13 | パナソニック株式会社 | フレキシブル回路基板およびその製造方法 |
KR100735339B1 (ko) * | 2006-12-29 | 2007-07-04 | 삼성전기주식회사 | 박막 캐패시터 내장형 배선 기판의 제조방법 |
US7886414B2 (en) * | 2007-07-23 | 2011-02-15 | Samsung Electro-Mechanics Co., Ltd. | Method of manufacturing capacitor-embedded PCB |
-
2007
- 2007-09-12 JP JP2007236663A patent/JP4912992B2/ja active Active
-
2008
- 2008-08-12 TW TW097130669A patent/TWI372586B/zh active
- 2008-08-14 US US12/191,454 patent/US8405953B2/en active Active
- 2008-08-14 KR KR1020080079720A patent/KR101414751B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20090027569A (ko) | 2009-03-17 |
JP2009070969A (ja) | 2009-04-02 |
TW200915937A (en) | 2009-04-01 |
TWI372586B (en) | 2012-09-11 |
KR101414751B1 (ko) | 2014-07-04 |
US20090067116A1 (en) | 2009-03-12 |
US8405953B2 (en) | 2013-03-26 |
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