JP6667765B2 - 電極接続方法及び電極接続構造 - Google Patents
電極接続方法及び電極接続構造 Download PDFInfo
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- JP6667765B2 JP6667765B2 JP2019055343A JP2019055343A JP6667765B2 JP 6667765 B2 JP6667765 B2 JP 6667765B2 JP 2019055343 A JP2019055343 A JP 2019055343A JP 2019055343 A JP2019055343 A JP 2019055343A JP 6667765 B2 JP6667765 B2 JP 6667765B2
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Description
本実施形態に係る電極接続方法及び電極接続構造について、図1ないし図5を用いて説明する。本発明に係る電極接続方法は、高融点の金属又はその合金(以下の実施の形態では主にニッケル:Niとする)を用いた相互接続方法である。Niの特性としては、融点が1455℃と高く、耐食性がよいことが知られており、Niメッキを行うことで高温環境に耐える接続を実現することができる。また、本実施形態に係る電極接続構造は、以下に示す電極接続方法により生成された電極接続構造である。
本実施形態に係る電極接続方法及び電極接続構造について、図7ないし図9を用いて説明する。図7は、本実施形態に係る電極接続構造においてインターポーザを用いる場合の構成を示す図である。図7(A)において、基板電極1aに凸状電極(ここでは、ボールバンプ71)が直接接触して接続され、SiCチップ2の裏面電極にも凸状電極(ここでは、ボールバンプ72)が直接接触して接続されており、それぞれのボールバンプ71と72は、インターポーザ73を介して電気的に接続されている。このとき、基板電極1aとSiCチップ2の裏面電極とは略平行に対向して配設されており、ボールバンプ71及び72の中心を結ぶ直線と、基板電極1a面やSiCチップ2の裏面電極面とが垂直にならない状態でインターポーザ73を介したメッキ処理がなされる。
このように、本発明に係る電極接続方法においては、接触部分の周辺、第1の電極及び第2の電極のメッキ部分を加熱処理するため、電極とメッキ金属との間で成分を拡散させて密着度を上げることができるという効果を奏する。また、加熱処理がなされることでメッキ部分の接続の歪みをなくすことができると共に、接続部の応力を緩和して劣化の防止を図ることができるという効果を奏する。
メッキ接合を行った試料が高耐熱性を有しているか検証するため、加熱後のシェア強度変化を測定した。測定を行う試料は、Cuワイヤ(1mmL、φ:172μm)をCu板と接触させ、接触部分の周辺にメッキ液を十分に流通させた状態でメッキを15分又は30分行ったものをそれぞれ使用した。その後、アルゴン(Ar)雰囲気中で加熱を行い、最後にシェアテストを実施した。シェアテストは各温度で9回実施し、シェア破断強度の平均値を求めた。図10にその実験系及び結果を示す。図10(A)は実験系の模式図、図10(B)はシェアテストの結果を示す。図10(A)に示すように、シェアテストはCuワイヤをCu板から剥ぎ取る場合の力を測定した。
高温環境にてCu−Ni合金層が形成された場合、抵抗値の上昇が考えられることから、合金化による抵抗値変化を測定した。測定を行う試料は、図11(A)に示すように、Cuワイヤ(30mm、φ:172μm)にメッキを30分行い、Ar雰囲気中で加熱後、四端子法による抵抗値測定を行った。ここでメッキ後のワイヤ径は222μmとなり、測定を行うワイヤの電圧測定端子間の長さは12.5mmとした。その時の結果を図11(B)に示す。
Cu−Niの拡散の状態を確認するため、Cu板上にNiメッキを行い、加熱後の試料断面の様子をSEM(2.5k倍)(S−3400N、日立製作所製)にて観察した。さらに界面の元素分布をEDXライン分析によって測定した。その結果を図12に示す。この時のSEM画像内の濃度分布の位置をグラフと対応させて表示している。図12(A)は未加熱の場合の結果、図12(B)は300℃で60分加熱した場合の結果、図12(C)は500℃で60分加熱した場合の結果を示している。
これまで述べてきた接合技術がパワーデバイスの相互接続技術として実用的であるかを評価するため、SiC−SBDチップ(1200V,15A,SiCED社製)を用いた高温環境での回路動作試験を行った。このチップはアノード面にAl電極、カソード面にAg電極が形成されており、厚さは365μm、大きさは2.7mm×2.7mmである。
メッキによって蒸着されたNi薄膜表面が熱によってどのような硬度変化を起こすかを調べるため、ビッカース硬さ測定試験を実施した。測定にはマイクロビッカース硬度計(MHT−1、松沢精機株式会社)を使用した。ビッカース硬さは硬度を表わす尺度の一つで、HVで表される。正四角錐型の圧子を試料表面に押し込み、荷重を除いたあとに残った圧痕の面積から換算表によって硬度を割り出す。圧痕は試料が硬ければ小さく、柔らかければ大きくなる。
2 SiCチップ
3 パッド
4 リード線
5 Niメッキ層
Claims (5)
- 電気的に接続される電気回路において、第1の電極と複数の第2の電極とを空間を有するように対向して配設し、当該空間内で少なくとも一部直接又は間接的に前記第1の電極と前記複数の第2の電極とを接触させ、
少なくとも前記第1の電極と前記複数の第2の電極との間の複数の接触箇所の周辺にメッキ液が流通した状態で、前記接触箇所と当該接触箇所の周辺の領域を含む前記空間内の前記第1の電極と前記複数の第2の電極とをメッキし、
相互に隣接する前記第2の電極間において、前記メッキにより形成されるそれぞれの前記第2の電極に対応するメッキ積層表面が相互に接触することで形成される遮蔽された空隙が生じる前にメッキ処理を停止させ、
前記第1の電極と前記複数の第2の電極間のメッキ部分を加熱処理することを特徴とする電極接続方法。 - 電気的に接続される電気回路において、第1の電極と複数の第2の電極とを空間を有するように対向して配設し、当該空間内で少なくとも一部直接又は間接的に前記第1の電極と前記複数の第2の電極とを接触させ、
少なくとも前記第1の電極と前記複数の第2の電極との間の複数の接触箇所の周辺にメッキ液が流通した状態で、前記接触箇所と当該接触箇所の周辺の領域を含む前記空間内の前記第1の電極と前記第2の電極とをメッキし、
相互に隣接する前記第2の電極間において、前記メッキにより形成されるそれぞれの前記第2の電極に対応するメッキ積層表面が相互に接触することで形成される遮蔽された空隙が生じる前にメッキ処理を停止させ、
前記第1の電極と前記複数の第2の電極が、チップ間の電極又はチップと基板との間の電極であり、前記電極が直接又は間接的に接触した状態で前記チップ及び/又は前記基板を上下方向から挟持し、当該電極間が固定された状態でメッキ処理がなされることを特徴とする電極接続方法。 - 電気回路の第1の電極と複数の第2の電極とが電気的に接続される電極接続構造であって、
前記第1の電極と前記複数の第2の電極とが、各第2の電極ごとに少なくとも1つの接触箇所で直接又は間接的に接触した状態で対向して配設され、
メッキ処理による積層が、前記接触箇所の周辺と、対向する前記第1の電極及び前記複数の第2の電極の表面とに形成されており、
相互に隣接する前記第2の電極間において、それぞれの前記第2の電極に対応して形成された前記メッキ処理による積層により遮蔽された空隙が形成されない形で前記第1の電極と前記複数の第2の電極とが接続されており、
前記第1の電極と前記複数の第2の電極が、それぞれチップ間の電極又はチップと基板との間の電極であり、メッキ処理時に前記電極が直接又は間接的に接触した状態で前記チップ及び/又は前記基板を上下方向から挟持する部材を有し、当該部材は弾性力で前記電極間を固定すると共に、配線として機能する金属体であることを特徴とする電極接続構造。 - 電気的に接続される電気回路において、第1の電極と第2の電極とを空間を有するように対向して配設し、当該空間内で少なくとも一部直接又は間接的に前記第1の電極と前記第2の電極とを接触させ、
少なくとも前記第1の電極と前記第2の電極との接触箇所の周辺近傍にメッキ液が流通した状態で、前記接触箇所と当該接触箇所の周辺近傍の領域、及び前記接触箇所の周辺近傍と離隔した領域を含む前記空間内の前記第1の電極と前記第2の電極とをメッキし、
前記空間内の、前記接触箇所から空間を充塞していくメッキ積層表面と前記第1の電極及び前記第2の電極の対向する表面にそれぞれ形成されるメッキ積層表面とが前記メッキ液に接触しており、
前記空間内の前記接触箇所の周辺近傍から離隔した領域において、前記第1の電極の表面に形成される前記メッキ積層表面と前記第2の電極の表面に形成される前記メッキ積層表面とが接触することで形成される遮蔽された空隙が生じる前にメッキ処理を停止させることを特徴とする電極接続方法。 - 電気回路の第1の電極と第2の電極とが電気的に接続される電極接続構造であって、
前記第1の電極と第2の電極とが、少なくとも1つの接触箇所で直接又は間接的に接触した状態で対向して配設され、
メッキ処理による積層が、前記接触箇所の周辺近傍と、対向する前記第1の電極及び前記第2の電極のそれぞれの対向する表面とに形成されており、
前記対向する第1の電極と第2の電極との対向する表面の領域であって、前記接触箇所の周辺近傍の領域はメッキ処理による積層で充塞されて接続されており、前記接触箇所の周辺近傍の領域から離隔した部分は、対向する第1の電極と第2の電極のそれぞれの対向する表面のメッキ処理による積層により遮蔽された空隙が形成されない形で分離されていることを特徴とする電極接続構造。
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JP5629065B2 (ja) * | 2009-07-02 | 2014-11-19 | メタローテクノロジーズジャパン株式会社 | 電極形成用金めっき浴及びそれを用いた電極形成方法 |
JP5533199B2 (ja) * | 2010-04-28 | 2014-06-25 | ソニー株式会社 | 素子の基板実装方法、および、その基板実装構造 |
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