JPS5185669A - - Google Patents

Info

Publication number
JPS5185669A
JPS5185669A JP50010525A JP1052575A JPS5185669A JP S5185669 A JPS5185669 A JP S5185669A JP 50010525 A JP50010525 A JP 50010525A JP 1052575 A JP1052575 A JP 1052575A JP S5185669 A JPS5185669 A JP S5185669A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50010525A
Other versions
JPS5423794B2 (ja
Inventor
Katsumi Umeda
Osamu Hashimoto
Koichi Sugyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NOGE DENKI KOGYO KK
NEC Corp
Original Assignee
NOGE DENKI KOGYO KK
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NOGE DENKI KOGYO KK, Nippon Electric Co Ltd filed Critical NOGE DENKI KOGYO KK
Priority to JP1052575A priority Critical patent/JPS5423794B2/ja
Publication of JPS5185669A publication Critical patent/JPS5185669A/ja
Publication of JPS5423794B2 publication Critical patent/JPS5423794B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
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    • H01L2924/20—Parameters
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    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns
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    • H01L2924/20—Parameters
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    • H01L2924/20756—Diameter ranges larger or equal to 60 microns less than 70 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20757—Diameter ranges larger or equal to 70 microns less than 80 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
JP1052575A 1975-01-27 1975-01-27 Expired JPS5423794B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1052575A JPS5423794B2 (ja) 1975-01-27 1975-01-27

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1052575A JPS5423794B2 (ja) 1975-01-27 1975-01-27

Publications (2)

Publication Number Publication Date
JPS5185669A true JPS5185669A (ja) 1976-07-27
JPS5423794B2 JPS5423794B2 (ja) 1979-08-16

Family

ID=11752652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1052575A Expired JPS5423794B2 (ja) 1975-01-27 1975-01-27

Country Status (1)

Country Link
JP (1) JPS5423794B2 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5614650U (ja) * 1979-07-14 1981-02-07
JPS56169341A (en) * 1980-05-31 1981-12-26 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor element
US6711925B2 (en) * 2001-12-17 2004-03-30 Asep Tec Co., Ltd. Process for manufacturing a conductive wire suitable for use in semiconductor packages
WO2013129253A1 (ja) * 2012-02-27 2013-09-06 日鉄住金マイクロメタル株式会社 パワー半導体装置及びその製造方法並びにボンディングワイヤ
KR20160007663A (ko) 2014-01-31 2016-01-20 다츠다 덴센 가부시키가이샤 와이어 본딩 및 그 제조 방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4722671B2 (ja) * 2005-10-28 2011-07-13 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
KR101687597B1 (ko) * 2015-01-19 2016-12-20 엠케이전자 주식회사 본딩 와이어

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5614650U (ja) * 1979-07-14 1981-02-07
JPS56169341A (en) * 1980-05-31 1981-12-26 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor element
US6711925B2 (en) * 2001-12-17 2004-03-30 Asep Tec Co., Ltd. Process for manufacturing a conductive wire suitable for use in semiconductor packages
WO2013129253A1 (ja) * 2012-02-27 2013-09-06 日鉄住金マイクロメタル株式会社 パワー半導体装置及びその製造方法並びにボンディングワイヤ
JP5728126B2 (ja) * 2012-02-27 2015-06-03 日鉄住金マイクロメタル株式会社 パワー半導体装置及びその製造方法並びにボンディングワイヤ
US9059003B2 (en) 2012-02-27 2015-06-16 Nippon Micrometal Corporation Power semiconductor device, method of manufacturing the device and bonding wire
KR20160007663A (ko) 2014-01-31 2016-01-20 다츠다 덴센 가부시키가이샤 와이어 본딩 및 그 제조 방법

Also Published As

Publication number Publication date
JPS5423794B2 (ja) 1979-08-16

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