CN105393343A - 线键合及其制造方法 - Google Patents

线键合及其制造方法 Download PDF

Info

Publication number
CN105393343A
CN105393343A CN201580001101.3A CN201580001101A CN105393343A CN 105393343 A CN105393343 A CN 105393343A CN 201580001101 A CN201580001101 A CN 201580001101A CN 105393343 A CN105393343 A CN 105393343A
Authority
CN
China
Prior art keywords
core
bonding line
outer peripheral
peripheral face
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201580001101.3A
Other languages
English (en)
Chinese (zh)
Inventor
长谷川刚
黑崎裕司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tatsuta Electric Wire and Cable Co Ltd
Original Assignee
Tatsuta Electric Wire and Cable Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tatsuta Electric Wire and Cable Co Ltd filed Critical Tatsuta Electric Wire and Cable Co Ltd
Publication of CN105393343A publication Critical patent/CN105393343A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/745—Apparatus for manufacturing wire connectors
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45601—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/45609—Indium (In) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
CN201580001101.3A 2014-01-31 2015-01-20 线键合及其制造方法 Pending CN105393343A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014017580 2014-01-31
JP2014-017580 2014-01-31
PCT/JP2015/051316 WO2015115241A1 (ja) 2014-01-31 2015-01-20 ワイヤボンディング及びその製造方法

Publications (1)

Publication Number Publication Date
CN105393343A true CN105393343A (zh) 2016-03-09

Family

ID=53756818

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580001101.3A Pending CN105393343A (zh) 2014-01-31 2015-01-20 线键合及其制造方法

Country Status (6)

Country Link
JP (1) JP5842068B2 (ja)
KR (1) KR101668975B1 (ja)
CN (1) CN105393343A (ja)
MY (1) MY175700A (ja)
TW (1) TWI534835B (ja)
WO (1) WO2015115241A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105950895A (zh) * 2016-05-06 2016-09-21 河南优克电子材料有限公司 一种小晶片led封装用微细银合金键合线的制造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016537819A (ja) * 2013-11-21 2016-12-01 ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー 接合適用のためのコーティングされたワイヤ
CN106233447A (zh) 2014-04-21 2016-12-14 新日铁住金高新材料株式会社 半导体装置用接合线
MY162048A (en) 2015-06-15 2017-05-31 Nippon Micrometal Corp Bonding wire for semiconductor device
SG11201604430YA (en) 2015-07-23 2017-02-27 Nippon Micrometal Corp Bonding wire for semiconductor device
WO2017026077A1 (ja) 2015-08-12 2017-02-16 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
SG10201508103QA (en) * 2015-09-29 2017-04-27 Heraeus Materials Singapore Pte Ltd Alloyed silver wire
SG10201509634UA (en) 2015-11-23 2017-06-29 Heraeus Oriental Hitec Co Ltd Coated wire
JP6969869B2 (ja) * 2016-12-19 2021-11-24 株式会社大和化成研究所 気化性変色防止剤
TWI802555B (zh) * 2017-03-31 2023-05-21 日商拓自達電線股份有限公司 接合線
JP6869920B2 (ja) * 2018-04-02 2021-05-12 田中電子工業株式会社 ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法
JP6869919B2 (ja) 2018-04-02 2021-05-12 田中電子工業株式会社 ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法
USD904836S1 (en) * 2019-06-03 2020-12-15 Ji Yeon JEONG Tongs for cooking
CN112703061A (zh) * 2019-08-13 2021-04-23 法国圣戈班玻璃厂 减少玻璃基底上银丝的腐蚀
EP3993017A4 (en) * 2019-11-22 2023-07-12 NIPPON STEEL Chemical & Material Co., Ltd. AG ALLOY CONNECTOR WIRE FOR SEMICONDUCTOR DEVICE

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691306A (en) * 1979-12-21 1981-07-24 Nippon Electric Co Bonding wire
CN101166799A (zh) * 2005-04-14 2008-04-23 尖能科技株式会社 油墨组合物与使用它的印刷方法
JP2012049198A (ja) * 2010-08-24 2012-03-08 Sumitomo Metal Mining Co Ltd 銀ボンディングワイヤ
JP2013219329A (ja) * 2012-03-15 2013-10-24 Jx Nippon Mining & Metals Corp 半導体装置用ボンディングワイヤ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5423794B2 (ja) 1975-01-27 1979-08-16
JPS5626459A (en) 1979-08-11 1981-03-14 Noge Denki Kogyo:Kk Bonding wire for assembling of semiconductor device
JP2002308708A (ja) * 2001-04-12 2002-10-23 Katayama Chem Works Co Ltd 銀系抗菌剤用の変色防止剤、それを含む銀系抗菌剤および抗菌方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691306A (en) * 1979-12-21 1981-07-24 Nippon Electric Co Bonding wire
CN101166799A (zh) * 2005-04-14 2008-04-23 尖能科技株式会社 油墨组合物与使用它的印刷方法
JP2012049198A (ja) * 2010-08-24 2012-03-08 Sumitomo Metal Mining Co Ltd 銀ボンディングワイヤ
JP2013219329A (ja) * 2012-03-15 2013-10-24 Jx Nippon Mining & Metals Corp 半導体装置用ボンディングワイヤ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105950895A (zh) * 2016-05-06 2016-09-21 河南优克电子材料有限公司 一种小晶片led封装用微细银合金键合线的制造方法
CN105950895B (zh) * 2016-05-06 2018-04-20 河南优克电子材料有限公司 一种小晶片led封装用微细银合金键合线的制造方法

Also Published As

Publication number Publication date
TW201535417A (zh) 2015-09-16
KR20160007663A (ko) 2016-01-20
JP5842068B2 (ja) 2016-01-13
KR101668975B1 (ko) 2016-10-24
TWI534835B (zh) 2016-05-21
WO2015115241A1 (ja) 2015-08-06
MY175700A (en) 2020-07-06
JP2015164186A (ja) 2015-09-10

Similar Documents

Publication Publication Date Title
CN105393343A (zh) 线键合及其制造方法
EP3062956B1 (en) Lead-free, silver-free solder alloys
JP4817095B2 (ja) ウィスカ抑制表面処理方法
US20020015660A1 (en) Lead-free solder alloys
JP2018167310A (ja) はんだ合金、はんだボール、チップソルダ、はんだペースト及びはんだ継手
KR101639220B1 (ko) 납 프리 땜납 합금
JP5129898B1 (ja) 電極溶食防止層を有する部品及びその製造方法
JPH10144718A (ja) スズ基鉛フリーハンダワイヤー及びボール
TWI311087B (en) Solder alloy, solder-ball and solder joint with use of the same
TW200909618A (en) Metal material, method for producing the same, and electrical electronic component using the same
JP2017501879A (ja) 亜鉛系鉛フリーはんだ組成物
JP2001284792A (ja) 半田材料及びそれを用いた半導体装置の製造方法
CN104023904B (zh) 焊膏
CN103547407A (zh) 焊锡合金
CN104134644A (zh) 球焊用稀贵金属银合金丝
EP1948388A1 (en) Lead-free solder alloy
JP2004154864A (ja) 鉛フリーはんだ合金
JPH10284667A (ja) 耐食性、耐酸化性に優れる電気電子機器用部品材料、及びその製造方法
JP2001131663A (ja) リードメッキ用Ｓｎ合金
JPH1197609A (ja) 酸化膜密着性に優れたリードフレーム用銅合金及びその製造方法
JP2014232762A (ja) ボンディングワイヤ、ボールボンディング方法および半導体装置
JPH10166177A (ja) 被覆半田材料及びその製造方法
JP6076698B2 (ja) 電極溶食防止層を有する部品
TW201230480A (en) Alkaline collector anode
WO2013157572A1 (ja) はんだ合金

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20160309