JP2016537819A - 接合適用のためのコーティングされたワイヤ - Google Patents
接合適用のためのコーティングされたワイヤ Download PDFInfo
- Publication number
- JP2016537819A JP2016537819A JP2016532613A JP2016532613A JP2016537819A JP 2016537819 A JP2016537819 A JP 2016537819A JP 2016532613 A JP2016532613 A JP 2016532613A JP 2016532613 A JP2016532613 A JP 2016532613A JP 2016537819 A JP2016537819 A JP 2016537819A
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- wire
- bonding
- core
- coating
- coating layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
- B23K20/007—Ball bonding
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
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- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
- B23K35/0261—Rods, electrodes, wires
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
- B23K35/0261—Rods, electrodes, wires
- B23K35/0272—Rods, electrodes, wires with more than one layer of coating or sheathing material
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- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K35/302—Cu as the principal constituent
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- B23K35/32—Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C
- B23K35/322—Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C a Pt-group metal as principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K35/40—Making wire or rods for soldering or welding
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K35/404—Coated rods; Coated electrodes
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- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F17/00—Multi-step processes for surface treatment of metallic material involving at least one process provided for in class C23 and at least one process covered by subclass C21D or C22F or class C25
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
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Abstract
Description
工程bは液体の膜をワイヤコア前駆体上に堆積させることによって行われ、液体はコーティング成分前駆体を含み、堆積させた膜はコーティング成分前駆体を金属相に分解するために加熱される。
コア主要成分 コーティング成分
Cu Pd
Cu Pt
Ag Au
Ag Pd
Ag Pt
a.ジメチルプロピオン酸(ピバル酸)、
b.ジメチル酪酸、および
c.ジメチルペンタン酸、
またはそのうちの少なくとも2つからなる群から選択される。
a.コア主要成分として銅または銀を有するワイヤのコア前駆体を供給する工程と、
b.コア前駆体上に層を形成するために材料を堆積させる工程であって、堆積させた材料が、パラジウム、プラチナ、金、ロジウム、ルテニウム、オスミウム、およびイリジウムの群から選択されるコーティング成分を含む工程と、
を含むボンディングワイヤの製造方法であり、工程bは液体の膜をワイヤコア前駆体上に堆積させることによって行われ、液体はコーティング成分前駆体を含み、堆積させた膜はコーティング成分前駆体を金属相に分解するために加熱される。
a.本発明によるワイヤを供給する工程と、
b.ボールボンディングまたはウェッジボンディングによって、ワイヤを装置の第1のボンディングパッドに接合する工程と、
c.ウェッジボンディングによって、ワイヤを装置の第2のボンディングパッドに接合する工程と、
を含み、工程bおよびcがフォーミングガスを使用することなく行われる。
全ての試験および測定は、温度20℃、相対湿度50%で行った。試験に使用したワイヤは本発明によるコーティングを用いた純銅コア(4n銅)を有する細いワイヤである。試験ワイヤの径は20μm(=0.8ミル)である。
コーティング層の厚さ、中間層の厚さ、およびコアの径を判定するために、ワイヤは、ワイヤの最大伸長に垂直に切断した。切断部は、軟質材料のスミアリング(smearing)を避けるために、入念に研磨して滑らかにした。画像を走査型電子顕微鏡(SEM)を用いて記録し、倍率はワイヤの全横断面が見えるように選択した。
ワイヤ表面の微構造に関して、特に電子後方散乱回析測定(EBSD)によって、いくつかの測定を行った。使用した分析ツールは、FE−SEM日立S−4300Eであった。測定およびデータ評価に使用したソフトウェアパッケージはTSLと呼ばれ、米国のEdax Inc.(www.edax.com)製のものである。これらの測定によって、ワイヤのコーティング層の結晶粒のサイズおよび分布および結晶方位を判定した。結晶粒の測定および評価をEBSD測定によって行うとき、許容角度5°を粒界の判定のために設定したことが理解される。EBSD測定をコーティング層の未処理表面上で直接行った。
ワイヤを金でめっきした基板に接合することを20℃で行い、接合は金の表面に適用した。装置のボンドパッドは0.3μm超の金で覆った1μmの厚さのAlが1%、Siが0.5%のCuであった。ワイヤと基板の間の角度45度で第1のボールボンドを形成した後、ワイヤを第2の端部で基板に押し込んだ。ワイヤの2つの端部間の接合の距離は5〜20mmの範囲であった。この距離は、ワイヤと基板の間で45度の角度を確保するために選択した。ウェッジボンディングの間、60〜120kHzの範囲の超音波周波数を、40〜500ミリ秒の間、ボンドツールに適用した。
図6の深さプロファイルは、一定のスパッタ電流密度で標的表面をスパッタしながら、それぞれの種類(例えばCu、Pd、C)の以下のオージェシグナルによって測定する。使用した装置はPHI 5800 ESCAである。
スパッタイオン:キセノン
スパッタ角度:90°
スパッタエネルギー:4keV
発明のワイヤの第1の実施例では、このワイヤコアを第1のリール30に巻く。第1のリール30は図5に示す装置の一部である。次に、ワイヤ1を、第1のリール31からほどき、第2のリール33に巻く。このとき、第2のリール33を回転させることによって、またはさらなる搬送装置によって(図示せず)、ワイヤを直接引いてもよい。
本発明によるワイヤの第2のより好ましい実施例では、銅ワイヤを上述のように作製する。
酢酸Pd22.01g(48.35%Pd)をピバル酸20.4gと混合し、結果として生じる酢酸が完全に蒸発するまで126℃で加熱し、かき混ぜる。これは約35分後に達成される。結果として生じる前駆体は橙黄色の樹脂様の物質である。
第3の実施例では、17μmの径の純銀のボンディングワイヤをワイヤコア前駆体として使用する。上述の第2の実施例と同じコーティング前駆体およびコーティング方法を用いる。わずかに小さいワイヤ径に応じて、35μmのより小さい穴を有するディスペンサダイスを選択する。他の全てのパラメーターは変わらない。
Claims (21)
- 表面(15)を有するコア(2)と前記コア(2)の表面(15)上に少なくとも部分的に重ねられたコーティング層(3)とを含むボンディングワイヤであって、前記コア(2)が銅および銀から成る群から選択されるコア主要成分を含み、前記コーティング層(3)がパラジウム、プラチナ、金、ロジウム、ルテニウム、オスミウム、およびイリジウムの群から選択されるコーティング成分を含み、ワイヤコア前駆体上に液体の膜を堆積させることによって前記コーティング層(3)を前記コアの表面(15)上に適用し、前記液体がコーティング成分前駆体を含み、前記コーティング成分前駆体を金属相に分解するために前記堆積させた膜を加熱することを特徴とする、ボンディングワイヤ。
- 前記ワイヤコアが最終径になるまで引き伸ばされた後、前記液体の膜が適用される、請求項1に記載のボンディングワイヤ。
- 前記ワイヤを引き伸ばす間に新たに生成される表面上に、前記液体の膜を適用する、請求項1または2に記載のボンディングワイヤ。
- 前記液体の膜が伸線ダイスの位置で適用される、請求項3に記載のボンディングワイヤ。
- 前記液体が、20℃で0.4mPa*s超の動的粘性率を有する、請求項1〜4のいずれか一項に記載のボンディングワイヤ。
- 前記コーティング成分前駆体が分岐カルボン酸の塩を含む、請求項1〜5のいずれか一項に記載のボンディングワイヤ。
- 前記コーティング成分前駆体が、第二級カルボン酸の塩、または第三級カルボン酸の塩を含む、請求項1〜6のいずれか一項に記載のボンディングワイヤ。
- 前記カルボン酸が飽和酸である、請求項6または7に記載のボンディングワイヤ。
- 前記カルボン酸が、
a.ジメチルプロピオン酸(ピバル酸)、
b.ジメチル酪酸、および
c.ジメチルペンタン酸、
またはそのうちの少なくとも2つからなる群から選択される、請求項6〜8のいずれか一項に記載のボンディングワイヤ。 - 前記カルボン酸の炭素原子数が4〜15である、請求項6〜9のいずれか一項に記載のボンディングワイヤ。
- 前記カルボン酸が窒素原子を1つも含まない、請求項1〜10のいずれか一項に記載のボンディングワイヤ。
- 前記ワイヤの径が5μm〜200μmである、請求項1〜11のいずれか一項に記載のボンディングワイヤ。
- 前記コーティング層中の前記コーティング成分の全量が30%未満である、請求項1〜12のいずれか一項に記載のボンディングワイヤ。
- 前記コーティング層中の前記コーティング成分の局所量が30%未満であり、前記コーティング層中のコア主要成分量が60%〜95%である、請求項1〜13のいずれか一項に記載のボンディングワイヤ。
- a.コア主要成分として銅または銀を有するワイヤのコア前駆体(2)を供給する工程と、
b.前記コア前駆体上に層(3)を形成するために材料を堆積させる工程であって、前記堆積させた材料が、パラジウム、プラチナ、金、ロジウム、ルテニウム、オスミウム、およびイリジウムの群から選択されるコーティング成分を含む工程と、
を含むボンディングワイヤの製造方法であって、
工程bが液体の膜を前記ワイヤコア前駆体上に堆積させることによって行われ、前記液体がコーティング成分前駆体を含み、前記コーティング成分前駆体を金属相に分解するために前記堆積させた膜を加熱する、製造方法。 - 前記液体が、20℃で0.4mPa*s超の動的粘性率を有する、請求項15に記載の製造方法。
- 前記堆積させた膜の加熱が150℃より高い温度で行われる、請求項15または16に記載の製造方法。
- 前記膜の堆積が、前記ワイヤの最後の伸線工程の後に行われる、請求項15〜17のいずれか一項に記載の製造方法。
- 前記ボンディングワイヤが請求項1〜14のいずれか一項に記載のワイヤである、請求項15〜18のいずれか一項に記載の製造方法。
- 第1のボンディングパッド(11)と、第2のボンディングパッド(11)と、請求項1〜14のいずれか一項に記載のワイヤ(1)とを含む電子装置を接合するためのシステムであって、前記ワイヤ(1)がボールボンディングによって前記ボンディングパッド(11)の少なくとも1つに接続されるシステム。
- a.請求項1〜14のいずれか一項に記載のワイヤ(1)を供給する工程と、
b.ボールボンディングまたはウェッジボンディングによって、前記ワイヤ(1)を前記装置の第1のボンディングパッドに接合する工程と、
c.ウェッジボンディングによって、前記ワイヤを前記装置の第2のボンディングパッドに接合する工程と、
を含み、工程bおよびcがフォーミングガスを使用することなく行われる、電気装置の接続方法。
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US10658326B2 (en) * | 2016-07-20 | 2020-05-19 | Samsung Electronics Co., Ltd. | Bonding wire having a silver alloy core, wire bonding method using the bonding wire, and electrical connection part of semiconductor device using the bonding wire |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007092092A (ja) * | 2005-09-27 | 2007-04-12 | C Uyemura & Co Ltd | 無電解パラジウムめっき浴及び無電解パラジウムめっき方法 |
JP2008266668A (ja) * | 2007-04-16 | 2008-11-06 | C Uyemura & Co Ltd | 無電解金めっき方法及び電子部品 |
JP2012251240A (ja) * | 2011-06-06 | 2012-12-20 | Xerox Corp | パラジウム前駆体組成物 |
JP2014517540A (ja) * | 2011-06-14 | 2014-07-17 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | マイクロエレクトロニクスデバイスのためのワイヤボンディング可能な表面 |
JP2015164186A (ja) * | 2014-01-31 | 2015-09-10 | タツタ電線株式会社 | ボンディングワイヤ及びその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5894038A (en) * | 1997-02-28 | 1999-04-13 | The Whitaker Corporation | Direct deposition of palladium |
US20030148024A1 (en) * | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
JP2006063386A (ja) * | 2004-08-26 | 2006-03-09 | Tokyo Electron Ltd | 半導体装置の製造方法 |
KR101019811B1 (ko) * | 2005-01-05 | 2011-03-04 | 신닛테츠 마테리알즈 가부시키가이샤 | 반도체 장치용 본딩 와이어 |
EP2960931B8 (en) * | 2007-07-24 | 2020-11-04 | NIPPON STEEL Chemical & Material Co., Ltd. | Copper bond wire |
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JP2007092092A (ja) * | 2005-09-27 | 2007-04-12 | C Uyemura & Co Ltd | 無電解パラジウムめっき浴及び無電解パラジウムめっき方法 |
JP2008266668A (ja) * | 2007-04-16 | 2008-11-06 | C Uyemura & Co Ltd | 無電解金めっき方法及び電子部品 |
JP2012251240A (ja) * | 2011-06-06 | 2012-12-20 | Xerox Corp | パラジウム前駆体組成物 |
JP2014517540A (ja) * | 2011-06-14 | 2014-07-17 | アトテツク・ドイチユラント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | マイクロエレクトロニクスデバイスのためのワイヤボンディング可能な表面 |
JP2015164186A (ja) * | 2014-01-31 | 2015-09-10 | タツタ電線株式会社 | ボンディングワイヤ及びその製造方法 |
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KR20160088414A (ko) | 2016-07-25 |
WO2015074703A1 (en) | 2015-05-28 |
EP3071730A1 (en) | 2016-09-28 |
CN105745356A (zh) | 2016-07-06 |
US20160288272A1 (en) | 2016-10-06 |
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