JPS61113740A - 半導体素子のボンデイング用銅線 - Google Patents

半導体素子のボンデイング用銅線

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Publication number
JPS61113740A
JPS61113740A JP59236410A JP23641084A JPS61113740A JP S61113740 A JPS61113740 A JP S61113740A JP 59236410 A JP59236410 A JP 59236410A JP 23641084 A JP23641084 A JP 23641084A JP S61113740 A JPS61113740 A JP S61113740A
Authority
JP
Japan
Prior art keywords
ppm
100ppm
weight
copper wire
50ppm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59236410A
Other languages
English (en)
Inventor
Yasuhiko Yoshinaga
吉永　保彦
Kenichi Kurihara
健一 栗原
Koichiro Mukoyama
向山　光一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP59236410A priority Critical patent/JPS61113740A/ja
Publication of JPS61113740A publication Critical patent/JPS61113740A/ja
Pending legal-status Critical Current

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    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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  • Engineering & Computer Science (AREA)
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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〈産業上の利用分野〉 本発明は半導体のチップ電橿と外部リード部とを接続す
るために使用するワイヤボンディング用銅線に関する。
〈従来の技術〉 従来、ボンディング用線として、もっばら金（Ａｕ　）
線あるいはアルミニュムｌ）線が使用されているが、最
近、金線の代替として経済性に有利な銅線の使用が検討
されているも未だ実用段階に至っていない。
一般にボンディング用線に要求される要素として、■引
張り強さが大きいこと、■高温強度が大きいこと、■塑
性変形による熱圧着及び超音波ボンディングが可能なこ
と、■ボール形状が真球に近く且つ一定していること、
■ボンディング後の接合強度が大きいことが最少限必要
である。
しかるに従来の銅線は導電材としての用途が一般的であ
り、使用される銅の純度も９９．９％、高くても９９．
９５〜９９．９６％までであり、金線に較べて引張り強
度が大きいものの硬すぎてボンデラングに供した場合に
チップ割れを起したり、ネック切れの原因となり又、接
合強度が小さく使用し得ない。
さらに、上記従来の銅線は表面酸化を起しやすいととも
に耐蝕性が小さく耐熱性に劣る欠点を有し、そのためボ
ンディング時のボール形状がいびつになりやすいととも
に接合強度が低下する不具合を生じ、前記五要素を満足
させることがＳきないものであった。
〈発明の目的〉 本発明は上記従来事情に鑑み、ボンディング用に要求さ
れる前記五要素を満足させ、しかも耐熱性及び耐蝕性を
向上させ、導電性を維持させて金線の代替として有用且
つ実用可能なボンディング用銅線を提供せんとすること
を目的とする。
〈発明の構成） 断る本発明のボンディング用銅線は、 ９９．９９％以上の高純度銅（Ｑｔ）に、第４周期元素
中より３〜５０重ＩＩ　ｐｐｍのチタン（Ｔｉ　）、３
〜５０重ｆｉ　ｐｐｍのクロム（Ｃｒ）、３〜５０重置
ｐ装ｍのマンガン（Ｍｎ　）　、　３〜５０重量ｏｐｎ
＋の鉄（Ｆｅ）、５〜１００重量ｐｐ＋ｎのニッケル（
Ｎｏ）、５〜１００重量１）Ｉ）ｌのコバルト（Ｃｏ）
の１種又は２種以上と、第５周期元素中より３〜５０重
量１１１）ｌのジルコニウム（Ｚｒ　）、３〜５０重量
　ｐｐｍのニオブ（Ｎｂ　）、５〜１００重量ｐｐ＋ｎ
のパラジウム（Ｐｄ）、５〜１００重量ｐｆ）ｌの銀（
Ａｃｔ）、５〜１００重量ｐｐｍのインジウム（Ｉｎ　
）、５〜１００重量ｐｐｍ＋７）スス（Ｓｎ　）の１種
又は２種以上とを６〜１５０重量ｐｌ）ｌ含有せしめた
ことを特徴とする。
本発明＃ｉｓは偽を９９．９９％以上の高純度とし、そ
れに前記元素Ｔ　ｉ　、　Ｃｒ、　Ｍｎ　、　Ｆｅ、　
ＮＬ。
Ｇの１種又は２種以上とＺｒ　、　Ｎｂ　、　Ｐｄ、　
Ａａ。
Ｉｎ、Ｓｎの１種又は２種以上とを含有せしめ　　　　
　′！ることによって適度な硬さくｆ−１ｖ：３５〜５
５）が得られ、ボンディング時におけるチップ割れ（シ
リコンチップのひび割れ）やネック切れ（ボールとワイ
ヤの境界部分の切断）を防止するとともにボールの潰れ
幅を一定にする。
上記元素Ｔ　ｉ　、　Ｃｒ、　Ｍｎ　、　Ｆｅ、　ＮＬ
、　Ｃｏ、及びＺｒ、Ｎｂ、Ｐｄ、Ａｇ、ｉｎ、Ｓｎは
何れも銅線の耐熱性を改善して結晶粗大化を防止すると
ともに結晶粒界破断（ネック切れの原因）を防止し、又
、銅線の耐蝕性を改善するものであるが、とくにその特
性を区分けするならば、Ｔｉ、Ｆｅ。
ＮＬ、Ｃｏ及びＺｒ、Ｎｂは耐熱性の改善に、Ｍｎ。
Ｃｒ及びＰｄ、〜、ｌｎ、３ｎは耐蝕性の改善に有用で
ある。
又、上記Ｔ　ｉ　、　Ｃｒ、　Ｍｎ　、　Ｆ＠及びｌｒ
　、　ＮｂはＮＬ、Ｃｏ及びＰｄ、　Ａｇ、　　ｌｎ　
、　３ｎに較べて、偽に対する固溶限が小さいので、そ
れらの含有間は、第４周期元素及び第５周期元素の各１
種が３重ｆｆｉｐｐｍｃ１．上、両周期元素の２種の合
計が６重量ｐｐｍ以上であれば前記効果が現われ、ＮＬ
。
Ｃｏ、　Ｐｄ、　ＡＱ、　　Ｉｎ　、　３ｎはそれらの
含有長両周期元素の各１種が５重量ｔ）９１１１以上、
両周期元素の２種の合計が１０重量ｐｐｍで効果が現わ
れる。
しかし、上記元素は夫々の上限値以上を含有させた場合
に硬くなりすぎてボンディング特性が低下するとともに
導電性を維持し得なくなって信頼性に劣り、前記元素の
含有間が１５０重Ｉ　ｐｐｎ＋を越えると前記欠点が現
われる。
〈実施例〉 本発明実施量の各試料は９９．９９９％へにＴｉ　、　
Ｏｒ、　Ｍｎ　、　Ｆｅ、　Ｎ１．Ｃｏの１種又は２種
以上と、ｚｒ、Ｎｂ、Ｐｄ、Ａａ、ｌｎ、３ｎの１種又
は２種以上とを添加して溶解鋳造し、線引加工と中間熱
処理とをくり返して直径２５μのＱ線に仕上げたもので
ある。
各試料の添加元素及び添加量を次表（１）に示す。
尚、比較量の試料Ｎ０１１は９９．９％の純銅線、Ｎｏ
、２は９９．９９％のｌｉＩ！銅線、Ｎｏ、３は３ｅを
５重量ｐｐｍ含有せしめた金線である。
表　　　　　（１） （次頁に統く） 上記各試料をもって、その機械的性質、ボンディング特
性を測定した結果を次表（２）に示す。
尚、ボンディングは熱圧着、超音波併用方式表（２）中
において、ボール形状の「良」とは真円状態、「可」と
は若干いびつが生じる状態、「不良」とはいびつが大き
くボール形状が定まらない状態である。
また、ボンディング後の接合強度について、チップ割れ
を起したちの帯びボール形状の不良のものにあっては測
定の対象とせず、表中に「−」をちって示した。
又、試料Ｎｏ、５９はボンディング後の接合強度が８（
ｏｒ）以下であって使用に供し得ない。
（次頁に続く） 表　　　　（２） 上記表（２）の測定結果よりみて、Ｔｉ、Ｃｒ。
Ｍｎ、Ｆｅ及びＺｒ　、Ｎｂはその含有量を６〜５０重
ｆｆｉｐｐｍ　、　ＮＬ、　Ｃｏ及びＰｄ、　Ａｇ、　
　（ｎ　、　３ｎはその含有量を１０〜１００重量ｐｐ
ｍとし、それらの中の２種以上を含有させる場合は、そ
の含有量上限を１５０重量１１１１ｍとした。
特　許　出　願　人　　　田中電子工業株式会社丁 −へ 手続ンｆｉｌ装置 昭和５９年１２月１斗日 １、事件の表示 昭和　５９　年　特許願　第　２３６４１０　　号２、
発明の名称 半導体素子のボンディング用銅線 ３、補正をする者 事件との関係　　　　特　許　出　願　人氏名（名称）
　　　　田中電子工業株式会社４、代理人 住　所　　東京都文京区白山５丁目１４番７号早川ビル
　電話東京９４６−０５３１番（代表）６、補正の対象 明細書の発明の詳細な説明の欄 ７、補正の内容 （４）同店第１２頁最上段の試料ＮＯ，６１のチップ割
れの有無側中に示した「無」を「有」に訂正する。

Claims (1)

    【特許請求の範囲】
  1. 　９９．９９％以上の高純度銅（Ｃｕ）に、第４周期元
    素中より３〜５０重量ｐｐｍのチタン（Ｔｉ）、３〜５
    ０重量ｐｐｍのクロム（Ｃｒ）、３〜５０重量ｐｐｍの
    マンガン（Ｍｎ）、３〜５０重量ｐｐｍの鉄（Ｆｅ）、
    ５〜１００重量ｐｐｍのニッケル（Ｎｉ）、５〜１００
    重量ｐｐｍのコバルト（Ｃｏ）の１種又は２種以上と、
    第５周期元素中より３〜５０重量ｐｐｍのジルコニウム
    （Ｚｒ）、３〜５０重量ｐｐｍのニオブ（Ｎｂ）、５〜
    １００重量ｐｐｍのパラジウム（Ｐｄ）、５〜１００重
    量ｐｐｍの銀（Ａｇ）、５〜１００ｐｐｍ重量ｐｐｍの
    インジウム（Ｉｎ）、５〜１００重量ｐｐｍのスズ（Ｓ
    ｎ）の１種又は２種以上とを６〜１５０重量ｐｐｍ含有
    せしめたことを特徴とする半導体素子のボンディング用
    銅線。
JP59236410A 1984-11-09 1984-11-09 半導体素子のボンデイング用銅線 Pending JPS61113740A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59236410A JPS61113740A (ja) 1984-11-09 1984-11-09 半導体素子のボンデイング用銅線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59236410A JPS61113740A (ja) 1984-11-09 1984-11-09 半導体素子のボンデイング用銅線

Publications (1)

Publication Number Publication Date
JPS61113740A true JPS61113740A (ja) 1986-05-31

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ID=17000341

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Country Status (1)

Country Link
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62253745A (ja) * 1986-04-25 1987-11-05 Mitsubishi Metal Corp 伸線加工性および導電性の良好なＣｕ合金超極細線
JPS6321841A (ja) * 1986-07-16 1988-01-29 Toshiba Corp 半導体装置
JPH036033A (ja) * 1989-06-02 1991-01-11 Nippon Steel Corp 半導体用ボンディング細線
US6331234B1 (en) 1999-06-02 2001-12-18 Honeywell International Inc. Copper sputtering target assembly and method of making same
US6758920B2 (en) 1999-11-24 2004-07-06 Honeywell International Inc. Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets
US6849139B2 (en) 1999-06-02 2005-02-01 Honeywell International Inc. Methods of forming copper-containing sputtering targets
CN103137237A (zh) * 2011-12-01 2013-06-05 贺利氏材料科技公司 用于微电子装置中接合的具有痕量加入物的3n铜线
CN103137236A (zh) * 2011-12-01 2013-06-05 贺利氏材料科技公司 用于微电子装置中接合的合金2n铜线
US20130142567A1 (en) * 2011-12-01 2013-06-06 Heraeus Materials Technology Gmbh & Co. Kg Doped 4n copper wires for bonding in microelectronics devices
CN104018023A (zh) * 2014-05-06 2014-09-03 阜阳市光普照明科技有限公司 一种led封装用铜合金键合连接线的制备方法
CN106282646A (zh) * 2016-08-10 2017-01-04 安徽晋源铜业有限公司 一种半导体焊接用铜线的加工方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5770244A (en) * 1980-10-15 1982-04-30 Furukawa Electric Co Ltd:The Heat-resistant and anticorrosive copper alloy for electric conduction
JPS58210140A (ja) * 1982-06-01 1983-12-07 Sumitomo Electric Ind Ltd 伝導用耐熱銅合金
JPS6120694A (ja) * 1984-07-06 1986-01-29 Toshiba Corp ボンデイングワイヤ−
JPS6148543A (ja) * 1984-08-10 1986-03-10 Sumitomo Electric Ind Ltd 半導体素子結線用銅合金線
JPS6152333A (ja) * 1984-08-21 1986-03-15 Toshiba Corp ボンデイングワイヤ−

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5770244A (en) * 1980-10-15 1982-04-30 Furukawa Electric Co Ltd:The Heat-resistant and anticorrosive copper alloy for electric conduction
JPS58210140A (ja) * 1982-06-01 1983-12-07 Sumitomo Electric Ind Ltd 伝導用耐熱銅合金
JPS6120694A (ja) * 1984-07-06 1986-01-29 Toshiba Corp ボンデイングワイヤ−
JPS6148543A (ja) * 1984-08-10 1986-03-10 Sumitomo Electric Ind Ltd 半導体素子結線用銅合金線
JPS6152333A (ja) * 1984-08-21 1986-03-15 Toshiba Corp ボンデイングワイヤ−

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62253745A (ja) * 1986-04-25 1987-11-05 Mitsubishi Metal Corp 伸線加工性および導電性の良好なＣｕ合金超極細線
JPS6321841A (ja) * 1986-07-16 1988-01-29 Toshiba Corp 半導体装置
JPH036033A (ja) * 1989-06-02 1991-01-11 Nippon Steel Corp 半導体用ボンディング細線
US6331234B1 (en) 1999-06-02 2001-12-18 Honeywell International Inc. Copper sputtering target assembly and method of making same
US6645427B1 (en) 1999-06-02 2003-11-11 Honeywell International Inc. Copper sputtering target assembly and method of making same
US6849139B2 (en) 1999-06-02 2005-02-01 Honeywell International Inc. Methods of forming copper-containing sputtering targets
US6758920B2 (en) 1999-11-24 2004-07-06 Honeywell International Inc. Conductive integrated circuit metal alloy interconnections, electroplating anodes; metal alloys for use as a conductive interconnection in an integrated circuit; and physical vapor deposition targets
US6858102B1 (en) * 2000-11-15 2005-02-22 Honeywell International Inc. Copper-containing sputtering targets, and methods of forming copper-containing sputtering targets
CN103137237A (zh) * 2011-12-01 2013-06-05 贺利氏材料科技公司 用于微电子装置中接合的具有痕量加入物的3n铜线
CN103137236A (zh) * 2011-12-01 2013-06-05 贺利氏材料科技公司 用于微电子装置中接合的合金2n铜线
US20130142567A1 (en) * 2011-12-01 2013-06-06 Heraeus Materials Technology Gmbh & Co. Kg Doped 4n copper wires for bonding in microelectronics devices
US20130142568A1 (en) * 2011-12-01 2013-06-06 Heraeus Materials Technology Gmbh & Co. Kg 3n copper wires with trace additions for bonding in microelectronics devices
CN103151091A (zh) * 2011-12-01 2013-06-12 贺利氏材料科技公司 用于微电子装置中接合的掺杂4n铜线
US9589694B2 (en) 2011-12-01 2017-03-07 Heraeus Deutschland GmbH & Co. KG Alloyed 2N copper wires for bonding in microelectronics devices
CN104018023A (zh) * 2014-05-06 2014-09-03 阜阳市光普照明科技有限公司 一种led封装用铜合金键合连接线的制备方法
CN106282646A (zh) * 2016-08-10 2017-01-04 安徽晋源铜业有限公司 一种半导体焊接用铜线的加工方法
CN106282646B (zh) * 2016-08-10 2018-10-12 安徽晋源铜业有限公司 一种半导体焊接用铜线的加工方法

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