CN104018023A - 一种led封装用铜合金键合连接线的制备方法 - Google Patents

一种led封装用铜合金键合连接线的制备方法 Download PDF

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CN104018023A
CN104018023A CN201410187816.XA CN201410187816A CN104018023A CN 104018023 A CN104018023 A CN 104018023A CN 201410187816 A CN201410187816 A CN 201410187816A CN 104018023 A CN104018023 A CN 104018023A
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copper alloy
insulation
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李春燕
秦廷廷
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Fuyang City Light Illuminates Bright Science And Technology Ltd
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/43985—Methods of manufacturing wire connectors involving a specific sequence of method steps
    • H01L2224/43986—Methods of manufacturing wire connectors involving a specific sequence of method steps with repetition of the same manufacturing step
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

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Abstract

本发明公开了一种LED封装用铜合金键合连接线的制备方法，其各元素成分的重量百分比如下：Pd0.3-0.6、Ag0.2-0.4、Au0.15-0.25、Pt0.05-0.1、Ca0.07-0.14、Be0.04-0.08、Ti0.02-0.03、Ir0.015-0.025、Ce0.01-0.02、Yb0.008-0.016、Eu0.005-0.01、B0.004-0.0.007、P0.005-0.01，余量为铜及不可避免的杂质。本发明制得的铜合金键合连接线具有柔软性好，硬度低，耐腐蚀氧化，导电和导热性能好，抗拉强度高、成本低等特点，大大提高了铜线的使用可靠性和安全性。

Description

一种LED封装用铜合金键合连接线的制备方法
技术领域
本发明涉及一种LED封装用铜合金键合连接线的制备方法，属于铜合金制造技术领域。 
背景技术
压焊工艺是LED封装环节的关键工艺，在LED封装过程中主要通过压焊工艺实现LED芯片与封装支架的电连接。LED封装企业目前普遍采用金线压焊，但金线价格昂贵，导致LED成本升高，相反地，铜线价格低廉，在降低成本方面具有巨大应用潜力，但铜线存在着硬度大、易氧化、键合强度低等缺点。 
发明内容
本发明的目的在于针对现有技术的不足，提供一种成本低、硬度低、抗拉强度高的LED封装用铜合金键合连接线的制备方法。 
本发明采用的技术方案如下： 
    一种LED封装用铜合金键合连接线的制备方法，包括以下步骤：
    （1）将电解铜加入高频感应炉中，加热至1150-1250℃，待电解铜熔化后，升温至1220-1280℃，加入Pd、Ag、Au、Pt等金属，同时在铜合金液表面覆盖一层覆盖剂，保温15-25min，然后对铜合金液进行炉前化学快速分析，使得铜合金液中各元素成分的重量百分比符合下列要求：Pd 0.3-0.6、Ag 0.2-0.4、Au 0.15-0.25、Pt 0.05-0.1、Ca 0.07-0.14、Be 0.04-0.08、Ti 0.02-0.03、Ir 0.015-0.025、Ce 0.01-0.02、Yb 0.008-0.016、Eu 0.005-0.01、B 0.004-0.0.007、P 0.005-0.01，余量为铜及不可避免的杂质；分析后根据配方中各组分的重量百分比调整补料；
    （2）向炉中按铜块投料重量的0.3-0.4%投入Al-Zn-Sn-Ga-Mg合金块熔化，合金块中Al、Zn、Sn、Ga、Mg元素的质量比为5-8：3-6：2-3：0.4-0.8:1-2，搅拌35-40min；然后调温至1260-1320℃，再加入精炼剂精炼20-30min，除渣后保温10-15min；
    （3）连铸连轧成铜合金杆、拉丝机拉制成铜合金单线；
    （4）将铜合金线材送入热处理炉中进行时效处理：先以100-120℃/h速率升温至220-250℃，保温5-8h，再以80-100℃/h速率升温至380-420℃，保温2-3h，再以50-60℃/h速率升温至510-540℃，保温1-2h，然后以70-90℃/h速率降温至350-380℃，保温3-4h，再以60-80℃/h速率降温至190-230℃，保温4-6h，空冷至室温即可。
    所述覆盖剂由以下重量份的原料：玻璃粉 5-10、石灰石10-15、钾长石8-12、橄榄石 4-8、硼泥 12-16、火山灰5-10、椰壳炭 9-13、纳米氮化铝 3-6，经混合，烘干，粉碎，过150-250目筛即可。 
所述精炼剂的制备方法如下：a、取以下重量份的原料：蛭石 2-3、高岭土 4-6、光卤石 3-5、氟化钙 2-3、锰矿渣 3-6、氟钛酸钾 2-4、明矾粉 1.5-2.5、冰晶石粉 2-3、纳米氮化硅 1-2、氯化钾 3-4、硅烷偶联剂KH-550 1-2；b、将蛭石、高岭土、光卤石混合均匀送入520-550℃下煅烧2-4h，取出粉碎过200-300目筛；加水打浆制成45-55%的浆液，然后加浓度为15-20%的盐酸溶液调节浆液pH=4.5-5.0，2000-3000rpm高速研磨20-30min，用浓度为15-20%的氢氧化钠溶液调节研磨液pH值为中性，喷雾干燥得粉末，再加入其余原料，1500-2000rpm高速搅拌5-10min，烘干，粉碎，过300-400目筛即可。 
本发明的有益效果： 
本发明制得的铜合金键合连接线柔软，硬度低，耐腐蚀氧化，导电和导热性能好，在直径相同的条件下铜丝可以承载更大电流，且可以减缓脆性金属化合物的形成，抗拉强度可提高20-30%，成本低，可节约90%以上，克服了金线成本高，铜线键合硬度高、易氧化、键合强度低等缺点，大大提高了铜线的使用可靠性和安全性。
具体实施方式
    一种LED封装用铜合金键合连接线的制备方法，包括以下步骤： 
    （1）将电解铜加入高频感应炉中，加热至1220℃，待电解铜熔化后，升温至1260℃，加入Pd、Ag、Au、Pt等金属，同时在铜合金液表面覆盖一层覆盖剂，保温20min，然后对铜合金液进行炉前化学快速分析，使得铜合金液中各元素成分的重量百分比符合下列要求：Pd 0.3-0.6、Ag 0.2-0.4、Au 0.15-0.25、Pt 0.05-0.1、Ca 0.07-0.14、Be 0.04-0.08、Ti 0.02-0.03、Ir 0.015-0.025、Ce 0.01-0.02、Yb 0.008-0.016、Eu 0.005-0.01、B 0.004-0.0.007、P 0.005-0.01，余量为铜及不可避免的杂质；分析后根据配方中各组分的重量百分比调整补料；
    （2）向炉中按铜块投料重量的0.3%投入Al-Zn-Sn-Ga-Mg合金块熔化，合金块中Al、Zn、Sn、Ga、Mg元素的质量比为6：4：2：0.5:1，搅拌35min；然后调温至1320℃，再加入精炼剂精炼20min，除渣后保温15min；
    （3）连铸连轧成铜合金杆、拉丝机拉制成铜合金单线；
    （4）将铜合金线材送入热处理炉中进行时效处理：先以120℃/h速率升温至240℃，保温6h，再以100℃/h速率升温至380℃，保温3h，再以60℃/h速率升温至520℃，保温1.5h，然后以90℃/h速率降温至360℃，保温4h，再以70℃/h速率降温至210℃，保温5h，空冷至室温即可。
    所述覆盖剂由以下重量（kg）的原料：玻璃粉 8、石灰石10、钾长石10、橄榄石 6、硼泥 15、火山灰8、椰壳炭 11、纳米氮化铝 4，经混合，烘干，粉碎，过200目筛即可。 
所述精炼剂的制备方法如下：a、取以下重量（kg）的原料：蛭石3、高岭土 5、光卤石 5、氟化钙 3、锰矿渣 4、氟钛酸钾 3、明矾粉 1.5、冰晶石粉 2、纳米氮化硅 1.5、氯化钾 3、硅烷偶联剂KH-550 1；b、将蛭石、高岭土、光卤石混合均匀送入520℃下煅烧4h，取出粉碎过300目筛；加水打浆制成55%的浆液，然后加浓度为15%的盐酸溶液调节浆液pH=5.0，2000rpm高速研磨20min，用浓度为18%的氢氧化钠溶液调节研磨液pH值为中性，喷雾干燥得粉末，再加入其余原料，1500rpm高速搅拌10min，烘干，粉碎，过300目筛即可。 
 制得的铜合金键合连接线经检验，其主要性能为：抗拉强度492Mpa，屈服强度为375Mpa，延伸率19%、导电率IACS（20℃）96%。 

Claims (3)

1.一种LED封装用铜合金键合连接线的制备方法，其特征在于包括以下步骤：
    （1）将电解铜加入高频感应炉中，加热至1150-1250℃，待电解铜熔化后，升温至1220-1280℃，加入Pd、Ag、Au、Pt等金属，同时在铜合金液表面覆盖一层覆盖剂，保温15-25min，然后对铜合金液进行炉前化学快速分析，使得铜合金液中各元素成分的重量百分比符合下列要求：Pd 0.3-0.6、Ag 0.2-0.4、Au 0.15-0.25、Pt 0.05-0.1、Ca 0.07-0.14、Be 0.04-0.08、Ti 0.02-0.03、Ir 0.015-0.025、Ce 0.01-0.02、Yb 0.008-0.016、Eu 0.005-0.01、B 0.004-0.0.007、P 0.005-0.01，余量为铜及不可避免的杂质；分析后根据配方中各组分的重量百分比调整补料；
    （2）向炉中按铜块投料重量的0.3-0.4%投入Al-Zn-Sn-Ga-Mg合金块熔化，合金块中Al、Zn、Sn、Ga、Mg元素的质量比为5-8：3-6：2-3：0.4-0.8:1-2，搅拌35-40min；然后调温至1260-1320℃，再加入精炼剂精炼20-30min，除渣后保温10-15min；
    （3）连铸连轧成铜合金杆、拉丝机拉制成铜合金单线；
（4）将铜合金线材送入热处理炉中进行时效处理：先以100-120℃/h速率升温至220-250℃，保温5-8h，再以80-100℃/h速率升温至380-420℃，保温2-3h，再以50-60℃/h速率升温至510-540℃，保温1-2h，然后以70-90℃/h速率降温至350-380℃，保温3-4h，再以60-80℃/h速率降温至190-230℃，保温4-6h，空冷至室温即可。
2.根据权利要求1所述的一种LED封装用铜合金键合连接线的制备方法，其特征在于，所述覆盖剂由以下重量份的原料：玻璃粉 5-10、石灰石10-15、钾长石8-12、橄榄石 4-8、硼泥 12-16、火山灰5-10、椰壳炭 9-13、纳米氮化铝 3-6，经混合，烘干，粉碎，过150-250目筛即可。
3.根据权利要求1所述的一种LED封装用铜合金键合连接线的制备方法，其特征在于，所述精炼剂的制备方法如下：a、取以下重量份的原料：蛭石 2-3、高岭土 4-6、光卤石 3-5、氟化钙 2-3、锰矿渣 3-6、氟钛酸钾 2-4、明矾粉 1.5-2.5、冰晶石粉 2-3、纳米氮化硅 1-2、氯化钾 3-4、硅烷偶联剂KH-550 1-2；b、将蛭石、高岭土、光卤石混合均匀送入520-550℃下煅烧2-4h，取出粉碎过200-300目筛；加水打浆制成45-55%的浆液，然后加浓度为15-20%的盐酸溶液调节浆液pH=4.5-5.0，2000-3000rpm高速研磨20-30min，用浓度为15-20%的氢氧化钠溶液调节研磨液pH值为中性，喷雾干燥得粉末，再加入其余原料，1500-2000rpm高速搅拌5-10min，烘干，粉碎，过300-400目筛即可。
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CN105349822A (zh) * 2015-12-23 2016-02-24 常熟市三荣装饰材料有限公司 文件柜
CN106229029A (zh) * 2016-08-30 2016-12-14 无锡统力电工股份有限公司 一种变压器用稀土硼铜合金换位导线及其制备方法
CN107190175A (zh) * 2017-06-15 2017-09-22 柳州豪祥特科技有限公司 耐磨减摩锰铝铜合金材料的制备方法
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CN109285617A (zh) * 2018-10-29 2019-01-29 宁波来和圣诞礼品有限公司 一种用于led灯的导线
CN110284023A (zh) * 2019-07-22 2019-09-27 安徽广宇电子材料有限公司 一种铜合金键合丝及其制备方法和应用

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CN107254592A (zh) * 2017-06-15 2017-10-17 柳州豪祥特科技有限公司 高锰铜合金材料的制备方法
CN109285617A (zh) * 2018-10-29 2019-01-29 宁波来和圣诞礼品有限公司 一种用于led灯的导线
CN110284023A (zh) * 2019-07-22 2019-09-27 安徽广宇电子材料有限公司 一种铜合金键合丝及其制备方法和应用

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