CN104018023A - 一种led封装用铜合金键合连接线的制备方法 - Google Patents

一种led封装用铜合金键合连接线的制备方法 Download PDF

Info

Publication number
CN104018023A
CN104018023A CN201410187816.XA CN201410187816A CN104018023A CN 104018023 A CN104018023 A CN 104018023A CN 201410187816 A CN201410187816 A CN 201410187816A CN 104018023 A CN104018023 A CN 104018023A
Authority
CN
China
Prior art keywords
copper alloy
insulation
copper
speed
bonding wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410187816.XA
Other languages
English (en)
Inventor
李春燕
秦廷廷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuyang City Light Illuminates Bright Science And Technology Ltd
Original Assignee
Fuyang City Light Illuminates Bright Science And Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuyang City Light Illuminates Bright Science And Technology Ltd filed Critical Fuyang City Light Illuminates Bright Science And Technology Ltd
Priority to CN201410187816.XA priority Critical patent/CN104018023A/zh
Publication of CN104018023A publication Critical patent/CN104018023A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/432Mechanical processes
    • H01L2224/4321Pulling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/438Post-treatment of the connector
    • H01L2224/43848Thermal treatments, e.g. annealing, controlled cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/43Manufacturing methods
    • H01L2224/43985Methods of manufacturing wire connectors involving a specific sequence of method steps
    • H01L2224/43986Methods of manufacturing wire connectors involving a specific sequence of method steps with repetition of the same manufacturing step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

本发明公开了一种LED封装用铜合金键合连接线的制备方法,其各元素成分的重量百分比如下:Pd0.3-0.6、Ag0.2-0.4、Au0.15-0.25、Pt0.05-0.1、Ca0.07-0.14、Be0.04-0.08、Ti0.02-0.03、Ir0.015-0.025、Ce0.01-0.02、Yb0.008-0.016、Eu0.005-0.01、B0.004-0.0.007、P0.005-0.01,余量为铜及不可避免的杂质。本发明制得的铜合金键合连接线具有柔软性好,硬度低,耐腐蚀氧化,导电和导热性能好,抗拉强度高、成本低等特点,大大提高了铜线的使用可靠性和安全性。

Description

一种LED封装用铜合金键合连接线的制备方法
技术领域
本发明涉及一种LED封装用铜合金键合连接线的制备方法,属于铜合金制造技术领域。 
背景技术
压焊工艺是LED封装环节的关键工艺,在LED封装过程中主要通过压焊工艺实现LED芯片与封装支架的电连接。LED封装企业目前普遍采用金线压焊,但金线价格昂贵,导致LED成本升高,相反地,铜线价格低廉,在降低成本方面具有巨大应用潜力,但铜线存在着硬度大、易氧化、键合强度低等缺点。 
发明内容
本发明的目的在于针对现有技术的不足,提供一种成本低、硬度低、抗拉强度高的LED封装用铜合金键合连接线的制备方法。 
本发明采用的技术方案如下: 
    一种LED封装用铜合金键合连接线的制备方法,包括以下步骤:
    (1)将电解铜加入高频感应炉中,加热至1150-1250℃,待电解铜熔化后,升温至1220-1280℃,加入Pd、Ag、Au、Pt等金属,同时在铜合金液表面覆盖一层覆盖剂,保温15-25min,然后对铜合金液进行炉前化学快速分析,使得铜合金液中各元素成分的重量百分比符合下列要求:Pd 0.3-0.6、Ag 0.2-0.4、Au 0.15-0.25、Pt 0.05-0.1、Ca 0.07-0.14、Be 0.04-0.08、Ti 0.02-0.03、Ir 0.015-0.025、Ce 0.01-0.02、Yb 0.008-0.016、Eu 0.005-0.01、B 0.004-0.0.007、P 0.005-0.01,余量为铜及不可避免的杂质;分析后根据配方中各组分的重量百分比调整补料;
    (2)向炉中按铜块投料重量的0.3-0.4%投入Al-Zn-Sn-Ga-Mg合金块熔化,合金块中Al、Zn、Sn、Ga、Mg元素的质量比为5-8:3-6:2-3:0.4-0.8:1-2,搅拌35-40min;然后调温至1260-1320℃,再加入精炼剂精炼20-30min,除渣后保温10-15min;
    (3)连铸连轧成铜合金杆、拉丝机拉制成铜合金单线;
    (4)将铜合金线材送入热处理炉中进行时效处理:先以100-120℃/h速率升温至220-250℃,保温5-8h,再以80-100℃/h速率升温至380-420℃,保温2-3h,再以50-60℃/h速率升温至510-540℃,保温1-2h,然后以70-90℃/h速率降温至350-380℃,保温3-4h,再以60-80℃/h速率降温至190-230℃,保温4-6h,空冷至室温即可。
    所述覆盖剂由以下重量份的原料:玻璃粉 5-10、石灰石10-15、钾长石8-12、橄榄石 4-8、硼泥 12-16、火山灰5-10、椰壳炭 9-13、纳米氮化铝 3-6,经混合,烘干,粉碎,过150-250目筛即可。 
所述精炼剂的制备方法如下:a、取以下重量份的原料:蛭石 2-3、高岭土 4-6、光卤石 3-5、氟化钙 2-3、锰矿渣 3-6、氟钛酸钾 2-4、明矾粉 1.5-2.5、冰晶石粉 2-3、纳米氮化硅 1-2、氯化钾 3-4、硅烷偶联剂KH-550 1-2;b、将蛭石、高岭土、光卤石混合均匀送入520-550℃下煅烧2-4h,取出粉碎过200-300目筛;加水打浆制成45-55%的浆液,然后加浓度为15-20%的盐酸溶液调节浆液pH=4.5-5.0,2000-3000rpm高速研磨20-30min,用浓度为15-20%的氢氧化钠溶液调节研磨液pH值为中性,喷雾干燥得粉末,再加入其余原料,1500-2000rpm高速搅拌5-10min,烘干,粉碎,过300-400目筛即可。 
本发明的有益效果: 
本发明制得的铜合金键合连接线柔软,硬度低,耐腐蚀氧化,导电和导热性能好,在直径相同的条件下铜丝可以承载更大电流,且可以减缓脆性金属化合物的形成,抗拉强度可提高20-30%,成本低,可节约90%以上,克服了金线成本高,铜线键合硬度高、易氧化、键合强度低等缺点,大大提高了铜线的使用可靠性和安全性。
具体实施方式
    一种LED封装用铜合金键合连接线的制备方法,包括以下步骤: 
    (1)将电解铜加入高频感应炉中,加热至1220℃,待电解铜熔化后,升温至1260℃,加入Pd、Ag、Au、Pt等金属,同时在铜合金液表面覆盖一层覆盖剂,保温20min,然后对铜合金液进行炉前化学快速分析,使得铜合金液中各元素成分的重量百分比符合下列要求:Pd 0.3-0.6、Ag 0.2-0.4、Au 0.15-0.25、Pt 0.05-0.1、Ca 0.07-0.14、Be 0.04-0.08、Ti 0.02-0.03、Ir 0.015-0.025、Ce 0.01-0.02、Yb 0.008-0.016、Eu 0.005-0.01、B 0.004-0.0.007、P 0.005-0.01,余量为铜及不可避免的杂质;分析后根据配方中各组分的重量百分比调整补料;
    (2)向炉中按铜块投料重量的0.3%投入Al-Zn-Sn-Ga-Mg合金块熔化,合金块中Al、Zn、Sn、Ga、Mg元素的质量比为6:4:2:0.5:1,搅拌35min;然后调温至1320℃,再加入精炼剂精炼20min,除渣后保温15min;
    (3)连铸连轧成铜合金杆、拉丝机拉制成铜合金单线;
    (4)将铜合金线材送入热处理炉中进行时效处理:先以120℃/h速率升温至240℃,保温6h,再以100℃/h速率升温至380℃,保温3h,再以60℃/h速率升温至520℃,保温1.5h,然后以90℃/h速率降温至360℃,保温4h,再以70℃/h速率降温至210℃,保温5h,空冷至室温即可。
    所述覆盖剂由以下重量(kg)的原料:玻璃粉 8、石灰石10、钾长石10、橄榄石 6、硼泥 15、火山灰8、椰壳炭 11、纳米氮化铝 4,经混合,烘干,粉碎,过200目筛即可。 
所述精炼剂的制备方法如下:a、取以下重量(kg)的原料:蛭石3、高岭土 5、光卤石 5、氟化钙 3、锰矿渣 4、氟钛酸钾 3、明矾粉 1.5、冰晶石粉 2、纳米氮化硅 1.5、氯化钾 3、硅烷偶联剂KH-550 1;b、将蛭石、高岭土、光卤石混合均匀送入520℃下煅烧4h,取出粉碎过300目筛;加水打浆制成55%的浆液,然后加浓度为15%的盐酸溶液调节浆液pH=5.0,2000rpm高速研磨20min,用浓度为18%的氢氧化钠溶液调节研磨液pH值为中性,喷雾干燥得粉末,再加入其余原料,1500rpm高速搅拌10min,烘干,粉碎,过300目筛即可。 
 制得的铜合金键合连接线经检验,其主要性能为:抗拉强度492Mpa,屈服强度为375Mpa,延伸率19%、导电率IACS(20℃)96%。 

Claims (3)

1.一种LED封装用铜合金键合连接线的制备方法,其特征在于包括以下步骤:
    (1)将电解铜加入高频感应炉中,加热至1150-1250℃,待电解铜熔化后,升温至1220-1280℃,加入Pd、Ag、Au、Pt等金属,同时在铜合金液表面覆盖一层覆盖剂,保温15-25min,然后对铜合金液进行炉前化学快速分析,使得铜合金液中各元素成分的重量百分比符合下列要求:Pd 0.3-0.6、Ag 0.2-0.4、Au 0.15-0.25、Pt 0.05-0.1、Ca 0.07-0.14、Be 0.04-0.08、Ti 0.02-0.03、Ir 0.015-0.025、Ce 0.01-0.02、Yb 0.008-0.016、Eu 0.005-0.01、B 0.004-0.0.007、P 0.005-0.01,余量为铜及不可避免的杂质;分析后根据配方中各组分的重量百分比调整补料;
    (2)向炉中按铜块投料重量的0.3-0.4%投入Al-Zn-Sn-Ga-Mg合金块熔化,合金块中Al、Zn、Sn、Ga、Mg元素的质量比为5-8:3-6:2-3:0.4-0.8:1-2,搅拌35-40min;然后调温至1260-1320℃,再加入精炼剂精炼20-30min,除渣后保温10-15min;
    (3)连铸连轧成铜合金杆、拉丝机拉制成铜合金单线;
(4)将铜合金线材送入热处理炉中进行时效处理:先以100-120℃/h速率升温至220-250℃,保温5-8h,再以80-100℃/h速率升温至380-420℃,保温2-3h,再以50-60℃/h速率升温至510-540℃,保温1-2h,然后以70-90℃/h速率降温至350-380℃,保温3-4h,再以60-80℃/h速率降温至190-230℃,保温4-6h,空冷至室温即可。
2.根据权利要求1所述的一种LED封装用铜合金键合连接线的制备方法,其特征在于,所述覆盖剂由以下重量份的原料:玻璃粉 5-10、石灰石10-15、钾长石8-12、橄榄石 4-8、硼泥 12-16、火山灰5-10、椰壳炭 9-13、纳米氮化铝 3-6,经混合,烘干,粉碎,过150-250目筛即可。
3.根据权利要求1所述的一种LED封装用铜合金键合连接线的制备方法,其特征在于,所述精炼剂的制备方法如下:a、取以下重量份的原料:蛭石 2-3、高岭土 4-6、光卤石 3-5、氟化钙 2-3、锰矿渣 3-6、氟钛酸钾 2-4、明矾粉 1.5-2.5、冰晶石粉 2-3、纳米氮化硅 1-2、氯化钾 3-4、硅烷偶联剂KH-550 1-2;b、将蛭石、高岭土、光卤石混合均匀送入520-550℃下煅烧2-4h,取出粉碎过200-300目筛;加水打浆制成45-55%的浆液,然后加浓度为15-20%的盐酸溶液调节浆液pH=4.5-5.0,2000-3000rpm高速研磨20-30min,用浓度为15-20%的氢氧化钠溶液调节研磨液pH值为中性,喷雾干燥得粉末,再加入其余原料,1500-2000rpm高速搅拌5-10min,烘干,粉碎,过300-400目筛即可。
CN201410187816.XA 2014-05-06 2014-05-06 一种led封装用铜合金键合连接线的制备方法 Pending CN104018023A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410187816.XA CN104018023A (zh) 2014-05-06 2014-05-06 一种led封装用铜合金键合连接线的制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410187816.XA CN104018023A (zh) 2014-05-06 2014-05-06 一种led封装用铜合金键合连接线的制备方法

Publications (1)

Publication Number Publication Date
CN104018023A true CN104018023A (zh) 2014-09-03

Family

ID=51435015

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410187816.XA Pending CN104018023A (zh) 2014-05-06 2014-05-06 一种led封装用铜合金键合连接线的制备方法

Country Status (1)

Country Link
CN (1) CN104018023A (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105349822A (zh) * 2015-12-23 2016-02-24 常熟市三荣装饰材料有限公司 文件柜
CN106229029A (zh) * 2016-08-30 2016-12-14 无锡统力电工股份有限公司 一种变压器用稀土硼铜合金换位导线及其制备方法
CN107190175A (zh) * 2017-06-15 2017-09-22 柳州豪祥特科技有限公司 耐磨减摩锰铝铜合金材料的制备方法
CN107254592A (zh) * 2017-06-15 2017-10-17 柳州豪祥特科技有限公司 高锰铜合金材料的制备方法
CN109285617A (zh) * 2018-10-29 2019-01-29 宁波来和圣诞礼品有限公司 一种用于led灯的导线
CN110284023A (zh) * 2019-07-22 2019-09-27 安徽广宇电子材料有限公司 一种铜合金键合丝及其制备方法和应用

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113740A (ja) * 1984-11-09 1986-05-31 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPH01180931A (ja) * 1988-01-12 1989-07-18 Fujikura Ltd 銅合金線材
JPH1096036A (ja) * 1996-09-24 1998-04-14 Fujikura Ltd 高強度高導電率銅合金線材
JP2002129262A (ja) * 2000-10-24 2002-05-09 Hitachi Cable Ltd 極細銅合金線及びその製造方法
EP1668198A1 (en) * 2003-09-03 2006-06-14 National University Of Singapore Deployable structures
TW201311914A (zh) * 2012-10-29 2013-03-16 Truan-Sheng Lui 半導體封裝用之銅合金線
CN103352140A (zh) * 2013-07-01 2013-10-16 铜陵兴怡金属材料有限公司 高强高导耐热铜合金线材及制备方法
CN103725918A (zh) * 2013-12-19 2014-04-16 铜陵金力铜材有限公司 稀土铜合金线材及制备方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61113740A (ja) * 1984-11-09 1986-05-31 Tanaka Denshi Kogyo Kk 半導体素子のボンデイング用銅線
JPH01180931A (ja) * 1988-01-12 1989-07-18 Fujikura Ltd 銅合金線材
JPH1096036A (ja) * 1996-09-24 1998-04-14 Fujikura Ltd 高強度高導電率銅合金線材
JP2002129262A (ja) * 2000-10-24 2002-05-09 Hitachi Cable Ltd 極細銅合金線及びその製造方法
EP1668198A1 (en) * 2003-09-03 2006-06-14 National University Of Singapore Deployable structures
TW201311914A (zh) * 2012-10-29 2013-03-16 Truan-Sheng Lui 半導體封裝用之銅合金線
CN103352140A (zh) * 2013-07-01 2013-10-16 铜陵兴怡金属材料有限公司 高强高导耐热铜合金线材及制备方法
CN103725918A (zh) * 2013-12-19 2014-04-16 铜陵金力铜材有限公司 稀土铜合金线材及制备方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105349822A (zh) * 2015-12-23 2016-02-24 常熟市三荣装饰材料有限公司 文件柜
CN106229029A (zh) * 2016-08-30 2016-12-14 无锡统力电工股份有限公司 一种变压器用稀土硼铜合金换位导线及其制备方法
CN107190175A (zh) * 2017-06-15 2017-09-22 柳州豪祥特科技有限公司 耐磨减摩锰铝铜合金材料的制备方法
CN107254592A (zh) * 2017-06-15 2017-10-17 柳州豪祥特科技有限公司 高锰铜合金材料的制备方法
CN109285617A (zh) * 2018-10-29 2019-01-29 宁波来和圣诞礼品有限公司 一种用于led灯的导线
CN110284023A (zh) * 2019-07-22 2019-09-27 安徽广宇电子材料有限公司 一种铜合金键合丝及其制备方法和应用

Similar Documents

Publication Publication Date Title
CN104018023A (zh) 一种led封装用铜合金键合连接线的制备方法
CN104046831A (zh) 一种汽车用铜合金电线的制备方法
CN104060121A (zh) 一种汽车用高耐磨铜合金线的制备方法
CN102268575B (zh) 一种铝合金材料
CN104046809A (zh) 一种汽车电子设备用铜合金线的制备方法
CN104046838A (zh) 一种汽车线缆用高强韧铜合金线的制备方法
CN103352140A (zh) 高强高导耐热铜合金线材及制备方法
CN103014463A (zh) 抗疲劳铝合金发泡模铸件的加工工艺
CN104213055B (zh) 一种镀铜碳纤维增强铝镁合金复合材料及其制备方法
CN104046808A (zh) 一种电气机车用铜合金接触线的制备方法
CN104046842A (zh) 一种汽车电子仪表用高镍铜合金线的制备方法
CN103695726A (zh) 一种电气化铁路用铝合金输电线及其制备方法
CN104789823A (zh) 一种led用铝基复合散热材料
CN104152728A (zh) 一种汽车线束用高导热铜合金线的制备方法
CN103820680A (zh) 一种新型高强耐热铝合金导线
CN104046816A (zh) 一种汽车工业用高强度铜合金线的制备方法
CN104046815A (zh) 一种汽车用低硅代铅铜合金线的制备方法
CN104046817B (zh) 一种汽车工业用高性能铜合金线的制备方法
CN104073696A (zh) 一种led用高稳定性铝基复合散热材料
CN104046840B (zh) 一种汽车电子仪表用耐腐蚀铜合金线的制备方法
CN104087792B (zh) 一种led用绝缘耐温铝基复合散热材料
CN104195376A (zh) 一种led用含改性浮石粉的铝基复合散热材料
CN104087793B (zh) 一种led用高传热铝基复合散热材料
CN104087794B (zh) 一种led用增强活性铝基复合散热材料
CN104046810A (zh) 一种汽车弹性元件用抗疲劳铜合金线的制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20140903

RJ01 Rejection of invention patent application after publication