CN103137236A - 用于微电子装置中接合的合金2n铜线 - Google Patents

用于微电子装置中接合的合金2n铜线 Download PDF

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Publication number
CN103137236A
CN103137236A CN2012105114194A CN201210511419A CN103137236A CN 103137236 A CN103137236 A CN 103137236A CN 2012105114194 A CN2012105114194 A CN 2012105114194A CN 201210511419 A CN201210511419 A CN 201210511419A CN 103137236 A CN103137236 A CN 103137236A
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Prior art keywords
alloy
approximately
corrosion
copper cash
resistancealloy
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CN2012105114194A
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Inventor
穆拉利·萨兰加帕尼
杨平熹
欧根·米尔克
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Heraeus Deutschland GmbH and Co KG
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Heraeus Materials Technology GmbH and Co KG
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Publication of CN103137236A publication Critical patent/CN103137236A/zh
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    • H—ELECTRICITY
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
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    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
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    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
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    • C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
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Abstract

一种用于微电子学中接合的合金2N铜线，其包含Ag、Ni、Pd、Au、Pt和Cr的群组中的一者或一者以上作为耐腐蚀性合金材料，其中所述耐腐蚀性合金材料的浓度在约0.009wt%与约0.99wt%之间。

Description

用于微电子装置中接合的合金2N铜线
技术领域
本发明大体上涉及用于微电子学中接合的合金2N铜线。
背景技术
细的Au、Cu和Al线广泛用于集成芯片中的互连。银线也已经研究用于独特的应用。对于Au和Al线来说，通常应用2N到4N纯度(99%到99.99%)，而对于Cu来说，通常只使用4N纯度。已经研究5N到8N纯度的Cu，但其并未用于实践中。加入掺杂剂以用于例如回路性能、可靠性、可接合性、耐腐蚀性等专门的应用。直径通常在18μm到75μm范围内的线常用于线接合。对于高电流承载应用来说，应用直径通常在200μm到400μm范围内的线。
用于所述线的合金通常连续铸成直径2mm到25mm的棒，并以称为粗、中间和细的步骤进一步拉延。细拉线在约0.25到0.6Tm(线的熔点)的高温下退火，并稍后缠绕，真空封装并存储用于接合。
若干专利报道掺杂和合金Cu线的益处。加入量在0.13到1.17质量%范围内的Pd据称在压力锅试验(PCT)测试上具有高可靠性。发现掺杂Mg和P<700ppm、维持30ppm氧(O)并且加入一系列元素Be、Al、Si、In、Ge、Ti、V(6-300ppm)、Ca、Y、La、Ce、Pr、Nd<300ppm的Cu线有效进行接合。加入在20-100ppm范围内的Nb和P以及低于50ppm的元素Cs、Lu、Ta、Re、Os、Ir、Po、At、Pr、Pm、Sm、Gd和低于100ppm的Zr、Sn、Be、Nd、Sc、Ga、Fr、Ra展示软且可接合的线。当掺杂最大1000ppm的元素Mn、Co、Ni、Nb、Pd、Zr和In时，产生可接合的Cu线。如果线含有低于2000ppm的Be、Fe、Zn、Zr、Ag、Sn、V，那么发现其是可接合并且可靠的。加入高达100ppm的硼(B)并加入低于10ppm的少量Be、Ca、Ge，并同时维持硫(S)<0.5ppm显示出低球硬度和降低的加工硬化。Cr<25ppm、Zr<9ppm、Ag<9ppm、Sn<9ppm的Cu线显示与Au线一样好的优良可接合性。加入低于9ppm的少量Fe、Ag、Sn、Zr可产生正常可接合的线。加入低于1000ppm的元素B、Na、Mg、Al、Si、Ca、K、V、Ga、Ge、Rb、Sr、Y、Mo、Cd、Cs、Ba、Hf、Ta、Tl、W展示卓越的性质并且适于接合。
使用O、C、H、N、S、P<1ppm的例如8N(99.999999%)等超高纯度Cu加工的Cu线产生具有40HV硬度的软线。使用纯度5N和6N加工并掺杂元素Ti、Cr、Fe、Mn、Ni、Co中的任一者或与所述元素的不同组合进行组合且维持低于4.5ppm的Cu线显示优良的可接合性。使用5N和6N纯度，加入Hf、V、Ta、Pd、Pt、Au、Cd、B、Al、In、Si、Ge、Pb、S、Sb和Bi<4.5ppm与Nb<4.5ppm的组合也显示优良的可接合性。加入0.12-8.4ppm的Ti以及Mg、Ca、La、Hf、V、Ta、Pd、Pt、Au、Cd、B、Al、In、Si、Ge、Pb、P、Sb、Bi、Nb<0.16-8.1ppm适合于接合。杂质<4ppm并含有Mg、Ca、Be、In、Ge、Tl<1ppm的Cu线性能与Au线一样并且软到35HV。
使用含有Mg、Al、Si、P<40ppm的4N Cu线，实现干净的球状无空气球。类似地，维持纯度<10ppm并加入La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Sc、Y<20ppm或Mg、Ca、Be、Ge、Si<20ppm，获得40到50HV的Cu线。加入Ni和Co<100ppm并且Ti、Cr、Mn、Fe、Ni、Zr、Nb、Pd、Ag、In、Sn<150ppm的Cu线显示耐腐蚀以及41HV的硬度。含有Ti、Fe、Cr、Mn、Ni、Co<150ppm的Cu线的接合性能也很优良。使用区域提纯的Cu并维持Mg、Ca、Ti、Zr、Hf＜100ppm获得小于49HV的软Cu线。在无空气球期间加入元素Be、Sn、Zn、Zr、Ag、Cr、Fe到最大2wt%，维持H、N、O、C含量并控制气体形成(H2、CO、N2、O2)，因此获得上佳的接合强度。加入400ppm Mg、痕量Fe和Ag显示减少热影响区(HAZ)附近裂缝的形成。此线耐腐蚀，并且其使用6N纯度Cu加工。加入La<0.002wt％、Ce<0.003wt％、Ca<0.004wt%到4N Cu线中展示长久存储期。
一般来说，合金Cu线需要具有优良的可接合性，在惰性或反应性环境中形成无空气球，尤其是在高加速应力测试(highly accelerated stress test，HAST)下具有可靠性，具有优良的形成回路性能，并且易于以大量生产规模拉线。电阻率略微增加5-15%通常是合金Cu线的缺点。然而，如果此线尤其在HAST下显示出卓越的可靠性性能，那么此线具有吸引力，即使电阻率和成本增加。
本发明的示例实施例设法提供用于微电子学中接合的合金2N Cu线，其可以提供高可靠性性能并且其他性质的受损程度降低。
发明内容
根据本发明的第一方面，提供一种用于微电子学中接合的合金2N铜线，其包含Ag、Ni、Pd、Au、Pt和Cr的群组中的一者或一者以上作为耐腐蚀性合金材料，其中所述耐腐蚀性合金材料的浓度在约0.009wt%与约0.99wt%之间。
耐腐蚀性合金材料包含在约0.009wt%与约0.99wt%之间的Ag。
耐腐蚀性合金材料包含在约0.009wt%与约0.99wt%之间的Ni。
耐腐蚀性合金材料包含在约0.009wt%与约0.129wt%之间的Pd。
耐腐蚀性合金材料包含在约0.009wt%与约0.99wt%之间的Au。
耐腐蚀性合金材料包含在约0.009wt%与约0.99wt%之间的Pt。
耐腐蚀性合金材料包含在约0.009wt%与约0.99wt%之间的Cr。
耐腐蚀性合金材料包含约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Ni。
耐腐蚀性合金材料包含约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Pd。
耐腐蚀性合金材料包含约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Au。
耐腐蚀性合金材料包含约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Pt。
耐腐蚀性合金材料包含约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Cr。
耐腐蚀性合金材料进一步包含约0.008wt%的P。
耐腐蚀性合金材料进一步包含约0.005wt%到0.013wt%的去氧剂合金材料。
去氧剂合金材料包含约0.005wt%的Ca、Ce、Mg、La和Al。
去氧剂合金材料进一步包含约0.008wt%的P。
耐腐蚀性合金材料进一步包含约0.012wt%到0.027wt%的晶粒细化剂合金材料。
晶粒细化剂合金材料包含约0.005wt%到约0.02wt%的Fe、约0.005wt%的B和约0.002wt%的Zr和Ti。
合金2N铜线可进一步包含约1到约3wt.ppm的S。
根据本发明的第二方面，提供一种用于微电子学中接合的合金2N铜线，其由以下组成：
2N铜线；
Ag、Ni、Pd、Au、Pt、Cr和P的群组中的一者或一者以上作为耐腐蚀性合金材料，其中所述耐腐蚀性合金材料的浓度在约0.009wt%与约0.99wt%之间；和
可存在或可不存在的另一组分，所述另一组分为S。
根据本发明的第二方面的合金2N铜线可含有在约0.009wt%到约0.99wt%之间的Ag。
根据本发明的第二方面的合金2N铜线可含有在约0.009wt%与约0.99wt%之间的Ni。
根据本发明的第二方面的合金2N铜线可含有在约0.009wt%与约0.129wt%之间的Pd。
根据本发明的第二方面的合金2N铜线可含有在约0.009wt%与约0.99wt%之间的Au。
根据本发明的第二方面的合金2N铜线可含有在约0.009wt%与约0.99wt%之间的Pt。
根据本发明的第二方面的合金2N铜线可含有在约0.009wt%与约0.99wt%之间的Cr。
根据本发明的第二方面的合金2N铜线可含有约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Ni。
根据本发明的第二方面的合金2N铜线可含有约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Pd。
根据本发明的第二方面的合金2N铜线可含有约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Au。
根据本发明的第二方面的合金2N铜线可含有约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Pt。
根据本发明的第二方面的合金2N铜线可含有约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Cr。
根据本发明的第二方面的合金2N铜线可含有约0.005wt%到约0.07wt%的Ag、约0.009wt%到约0.89wt%的Ni和约0.008wt%的P。
根据本发明的第二方面的合金2N铜线可含有约0.005wt%到约0.07wt%的Ag、约0.009wt%到约0.89wt%的Pd和约0.008wt%的P。
根据本发明的第二方面的合金2N铜线可含有约0.0003wt%的S作为所述另一组分。
根据本发明的第三方面，提供一种用于接合电子装置的系统，其包含第一接合垫、第二接合垫和根据本发明的合金2N铜线，其中线借助于楔形接合连接于两个接合垫。
附图说明
从以下的书面描述中，仅仅通过实例，并结合图式，将更好地了解本发明的实施例并为所属领域的一般技术人员显而易见。
图1显示说明根据一个示例实施例的2N合金Cu0.8mil线和4N软Cu0.8mil参考线的比较拉伸应力-拉伸应变数据。
图2显示根据一个示例实施例的2N合金Cu线和4N软Cu0.8mil参考线的比较极化扫描数据。
图3a)到c)显示分别说明根据一个示例实施例的2N合金Cu0.8mil线的回路式接合、球形接合和针脚式接合的SEM图像。
图4a)到b)分别显示根据一个示例实施例的2N合金Cu线的比较球形接合和针脚式接合工艺窗口数据。
图5a)到b)显示4N软Cu0.8mil参考线和根据一个示例实施例的2N合金Cu线各自的比较热老化(也称为高温存储(HTS))数据。
图6a)到c)分别显示根据一个示例实施例的2N合金Cu0.8mil线和4N软Cu0.8mil参考线的比较回路高度数据(2.4mil回路高度比较的盒图)和低回路带的SEM图像。
具体实施方式
本文所述的示例实施例可以提供用于微电子封装工业中接合的合金2N Cu线。主要合金元素是Ag、Ni、Pd、Au、Pt、Cr、Ca、Ce、Mg、La、Al、P、Fe、B、Zr和Ti，使用高纯度Cu(>99.99%)。细线从合金Cu拉延。示例实施例中的线可接合到Al接合垫以及镀Ag、Cu、Au、Pd的表面。当接合到Al接合垫并存储在约175℃下约1000小时时，此线接合的HTS结果可以与市售4N软Cu参考线相比。合金线的耐腐蚀性有利地比4N软Cu参考线强。如所属领域的技术人员所了解，HAST或THB(温度湿度偏差)测试通常针对Cu线接合和环氧树脂模制的装置以及偏差或无偏差条件进行。在测试期间，Cu线接合界面(即焊接到Al接合垫的Cu线)进行基于电化学的电偶腐蚀。环氧树脂吸湿是羟基离子(OH-)扩散的来源。环氧树脂中百万分率含量的卤素(Cl、Br等)污染是Cl-离子的来源。针对根据本发明的示例实施例的线，在线于稀HCl酸中的电化学反应下记录的极化扫描展示显示出耐腐蚀性的正静止电位。因此，预计根据示例实施例的2N合金Cu线在例如HAST和THB等可靠性研究上性能较佳。
2N合金Cu连续铸成棒。在示例实施例中，元素个别地加入或者组合到最大约0.99wt%并且维持线的组成是2N。铸棒拉线成约10μm到250μm的细直径。示例实施例中的细线有利地显示出良好的无空气球(FAB)形成、可接合性、回路形成和可靠性(HTS)。对于在微电子封装领域中的接合，示例实施例中的具有痕量加入物的线的硬度、拉伸强度、表面氧化、电阻率和熔断电流略微高于4N软Cu参考线，同时有利地展示更强的耐腐蚀性，并且柔软度不会极大地受损。
在示例实施例中，4N到5N纯度的铜用以制备合金并在真空感应炉中熔化。将Ag、Ni、Pd、Au、Pt、Cr、Ca、Ce、Mg、La、Al、P、Fe、B、Zr和Ti中的至少一者或一者以上加入熔化物中，并保持约2到15分钟，以允许彻底熔解。元素个别地加入或组合加入。合金以低速连续铸成约2mm到25mm棒。未观察到掺杂剂加入量明显损失。这些棒在室温(约23-25℃)下冷拉线。
碳化钨拉模用以最初拉延粗线，并且金刚石拉模用于进一步缩减成细线。线以约15m/s和低于15m/s的拉延速度分三个阶段拉延。拉模的粗线缩减比率是约14-18％，并且细线是约4到12%。在冷拉延期间，对线进行润滑并且在阶段之间中间退火，以减少残余应力。最后，拉线分股退火，缠绕在干净的阳极化(镀覆)铝线轴上，真空封装并存储。
使用菲希尔范围(Fischer scope)H100C测试仪，利用维氏压头(Vickers indenter)，施加15mN力，持续10s停留时间，来测量硬度。线的拉伸性质使用英斯特朗(Instron)-5300测试。线使用库力索法(Kulicke & Soffa，K & S)爱肯(iConn)接合机接合。在LEO-1450VP扫描电子显微镜中观察接合的线。
示例实施例中的合金元素和加入量范围提供于表1中。熔合贵金属Ag、Au、Pd、Pt以及金属Ni和Cr，以提高Cu线的耐腐蚀性。在一些实施例中，Ca、Ce、Mg、La、Al、P作为去氧剂熔合，以软化FAB。在一些实施例中，Fe、B、Zr、Ti作为晶粒细化剂熔合，以影响FAB晶粒。在一些实施例中，加入硼，以影响线以及Ag和Ni的应变硬化。
表1-2N合金Cu线的组成(wt%)
Figure BDA00002517633300061
Figure BDA00002517633300071
示例实施例的合金线的机械和电性质提供于表2中。有利地，这些性质接近4N软Cu参考线。根据示例实施例的2N合金Cu线的代表性拉伸图显示于图1中。如从曲线100(根据示例实施例的2N合金Cu线)与曲线102(4N软Cu参考线)的比较可以看出，在拉伸负荷上变形行为有利地类似，但要塑性变形可能需要更高负荷。根据示例实施例的2N合金Cu线的硬度和模数也略微更高。根据示例实施例的2N合金Cu线的电阻率有利地与约2.34μΩ.cm的4N Au线相等。此说明最大约0.99wt%的合金有利地并未极大地改变示例实施例中的合金线的变形特征和电阻率。
表2-2N合金Cu线的腐蚀、机械和电性质
Figure BDA00002517633300072
Figure BDA00002517633300081
根据示例实施例的2N合金Cu线的耐腐蚀性比4N软Cu参考线明显更强(表2)。图2显示根据示例实施例的2N合金Cu线的代表性扫描(曲线200)，其展示与4N软Cu参考线(曲线202)的-255mV相比，-139mV的较高正静止电位。如所属领域的技术人员所了解，在极化扫描中，如果测试元素的静止电位(腐蚀电位)朝向正，那么此元素是惰性的(noble)。另一方面，如果静止电位是负的，那么此元素是活泼的(腐蚀性的)。因此，根据示例实施例的2N合金Cu线比4N软Cu参考线“更具惰性”。扫描使用稀HCl酸电解液并保持在室温下搅拌溶液获得。
示例实施例的2N合金Cu线可以接合到经Au、Ag、Pd和Cu金属化(镀覆)的垫。接合到Al接合垫后，预期线接合尤其在HAST和THB测试下具有较长久的可靠性寿命。图3(a)、(b)和(c)分别显示根据示例实施例的2N合金Cu0.8mil线的回路式接合、球形接合和针脚式接合的代表性扫描电子显微镜图像。参看图4和5，根据示例实施例的2N合金Cu线与参考软Cu4N线的球形接合和针脚式接合工艺窗口和可靠性性能几乎相同。更具体地说，图4(a)中，根据示例实施例的2N合金Cu线的代表性球形接合工艺窗口402类似于4N软Cu参考线的球形接合工艺窗口400。类似地，图4(b)中，根据示例实施例的2N合金Cu线的代表性针脚式接合工艺窗口404类似于4N软Cu0.8mil参考线的针脚式接合工艺窗口406。曲线500(图5(a))与代表性曲线502(图5(b))的比较说明4N软Cu0.8mil参考线与根据示例实施例的2N合金Cu0.8mil线的热老化也是类似的。
高2.4mil的根据示例实施例的2N合金Cu线的超低回路接合也展示类似于4N软Cu参考线的优良性能。更具体地说，图6(a)中的曲线图显示针对根据示例实施例的接合的2N合金Cu0.8mil线所测量的代表性回路高度(数字600)实质上与4N软Cu0.8mil参考线(数字602)相同。此表明根据示例实施例的2N合金Cu线与4N软Cu参考线一样软并且性能一样优良。2N合金Cu0.8mil线的扫描电子显微镜(SEM)图像(图6(b)、(c))显示根据示例实施例的线的颈区中无明显的裂缝。
所属领域的技术人员应了解，在不脱离如大体描述的本发明的精神或范围下，可对如特定实施例中所示的本发明进行许多改变和/或修改。因此，本发明的实施例在各个方面都被认为是例示性而非限制性的。

Claims (30)

1.一种用于微电子学中接合的合金2N铜线，其包含Ag、Ni、Pd、Au、Pt和Cr的群组中的一者或一者以上作为耐腐蚀性合金材料，其中所述耐腐蚀性合金材料的浓度在约0.009wt%与约0.99wt%之间。
2.根据权利要求1所述的合金2N铜线，其中所述耐腐蚀性合金材料包含在约0.009wt%与约0.99wt%之间的Ag。
3.根据权利要求1所述的合金2N铜线，其中所述耐腐蚀性合金材料包含在约0.009wt%与约0.99wt%之间的Ni。
4.根据权利要求1所述的合金2N铜线，其中所述耐腐蚀性合金材料包含在约0.009wt%与约0.129wt%之间的Pd。
5.根据权利要求1所述的合金2N铜线，其中所述耐腐蚀性合金材料包含在约0.009wt%与约0.99wt%之间的Au。
6.根据权利要求1所述的合金2N铜线，其中所述耐腐蚀性合金材料包含在约0.009wt%与约0.99wt%之间的Pt。
7.根据权利要求1所述的合金2N铜线，其中所述耐腐蚀性合金材料包含在约0.009wt%与约0.99wt%之间的Cr。
8.根据权利要求1所述的合金2N铜线，其中所述耐腐蚀性合金材料包含约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Ni。
9.根据权利要求1所述的合金2N铜线，其中所述耐腐蚀性合金材料包含约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Pd。
10.根据权利要求1所述的合金2N铜线，其中所述耐腐蚀性合金材料包含约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Au。
11.根据权利要求1所述的合金2N铜线，其中所述耐腐蚀性合金材料包含约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Pt。
12.根据权利要求1所述的合金2N铜线，其中所述耐腐蚀性合金材料包含约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Cr。
13.根据权利要求8或9所述的合金2N铜线，其中所述耐腐蚀性合金材料进一步包含约0.008wt%的P。
14.根据权利要求1到12中任一权利要求所述的合金2N铜线，其进一步包含约0.0003wt%的S。
15.根据权利要求13所述的合金2N铜线，其进一步包含约0.0003wt%的S。
16.一种用于微电子学中接合的合金2N铜线，其由以下组成：
2N铜线；
Ag、Ni、Pd、Au、Pt、Cr和P的群组中的一者或一者以上作为耐腐蚀性合金材料，其中所述耐腐蚀性合金材料的浓度在约0.009wt%与约0.99wt%之间；和
可存在或可不存在的另一组分，所述另一组分为S。
17.根据权利要求16所述的合金2N铜线，其中所述耐腐蚀性合金材料是在约0.009wt%到约0.99wt%之间的Ag。
18.根据权利要求16所述的合金2N铜线，其中所述耐腐蚀性合金材料是在约0.009wt%与约0.99wt%之间的Ni。
19.根据权利要求16所述的合金2N铜线，其中所述耐腐蚀性合金材料是在约0.009wt%与约0.129wt%之间的Pd。
20.根据权利要求16所述的合金2N铜线，其中所述耐腐蚀性合金材料是在约0.009
wt%与约0.99wt%之间的Au。
21.根据权利要求16所述的合金2N铜线，其中所述耐腐蚀性合金材料是在约0.009wt%与约0.99wt%之间的Pt。
22.根据权利要求16所述的合金2N铜线，其中所述耐腐蚀性合金材料是在约0.009wt%与约0.99wt%之间的Cr。
23.根据权利要求16所述的合金2N铜线，其中所述耐腐蚀性合金材料是约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Ni。
24.根据权利要求16所述的合金2N铜线，其中所述耐腐蚀性合金材料是约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Pd。
25.根据权利要求16所述的合金2N铜线，其中所述耐腐蚀性合金材料是约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Au。
26.根据权利要求16所述的合金2N铜线，其中所述耐腐蚀性合金材料是约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Pt。
27.根据权利要求16所述的合金2N铜线，其中所述耐腐蚀性合金材料是约0.005wt%到约0.07wt%的Ag和约0.009wt%到约0.89wt%的Cr。
28.根据权利要求16所述的合金2N铜线，其中所述耐腐蚀性合金材料是约0.005wt%到约0.07wt%的Ag、约0.009wt%到约0.89wt%的Ni和约0.008wt%的P。
28.根据权利要求16所述的合金2N铜线，其中所述耐腐蚀性合金材料是约0.005wt%到约0.07wt%的Ag、约0.009wt%到约0.89wt%的Pd和约0.008wt%的P。
29.根据权利要求16到28中任一权利要求所述的合金2N铜线，其中所述另一组分存在且为约0.0003wt%的S。
30.一种用于接合电子装置的系统，其包含第一接合垫、第二接合垫和根据权利要求1到29中任一权利要求所述的线，其中所述线借助于楔形接合连接于所述两个接合垫。
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