JP2019071423A - 半導体装置用ボンディングワイヤ - Google Patents
半導体装置用ボンディングワイヤ Download PDFInfo
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- JP2019071423A JP2019071423A JP2018222908A JP2018222908A JP2019071423A JP 2019071423 A JP2019071423 A JP 2019071423A JP 2018222908 A JP2018222908 A JP 2018222908A JP 2018222908 A JP2018222908 A JP 2018222908A JP 2019071423 A JP2019071423 A JP 2019071423A
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- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
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- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/04—Alloys based on copper with zinc as the next major constituent
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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Abstract
Description
(全体構成)
本発明の実施形態に係るボンディングワイヤは、Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層と、前記Pd被覆層の表面に形成されたCu表面層を有する半導体装置用ボンディングワイヤにおいて、Niを含み、ワイヤ全体に対するNiの濃度が0.1〜1.2wt.%であり、前記Pd被覆層の厚さが0.015〜0.150μmであり、前記Cu表面層の厚さが0.0005〜0.0070μmである。本発明の実施形態に係るボンディングワイヤは、高い接合信頼性を確保しつつ、優れた耐キャピラリ摩耗性と表面疵耐性を有し、車載用デバイスに好適である。本発明の実施形態に係るボンディングワイヤはさらに、ボール形成性、ウェッジ接合性などの総合性能を満足することができる。
本発明の実施形態に係るボンディングワイヤの製造方法の一例を説明する。ボンディングワイヤは、芯材に用いるCu合金を製造した後、ワイヤ状に細く加工し、Pd被覆層、必要に応じてPd被覆層上にAu層を形成し、中間熱処理と最終熱処理を実施することで得られる。加工方法は、ダイスと呼ばれる冶具にワイヤを通すことで加工する伸線加工と呼ばれる手法を用いることができる。Pd被覆層、Au層を形成後、再度伸線加工と中間熱処理を行う場合もある。Cu合金芯材の製造方法、Pd被覆層、合金被覆層、Cu表面層の形成方法、中間熱処理と最終熱処理方法について詳しく説明する。
本発明は上記実施形態に限定されるものではなく、本発明の趣旨の範囲内で適宜変更することが可能である。
以下では、実施例を示しながら、本発明の実施形態に係るボンディングワイヤについて、具体的に説明する。
まずサンプルの作製方法について説明する。芯材の原材料となるCuは純度が99.99wt.%以上で残部が不可避不純物から構成されるものを用いた。Ni、Zn、In、Pt、Pd、B、P、Mg、Sn、Ga、Geは純度が99wt.%以上で残部が不可避不純物から構成されるものを用いた。
Cu合金芯材の表面積に対するPd被覆層および、Pd被覆層の表面積に対する合金被覆層の存在比率は、ボンディングワイヤの表面から深さ方向に向かってArイオンでスパッタしながら、AES装置を用いて面分析を行い、測定面積に対するPd被覆層および合金被覆層が存在する面積の割合によって算出した。面分析を行う領域は、ワイヤの長手方向に対して40μm以上、ワイヤ短手方向に対して10μm以上であることが好ましい。
接合信頼性は、接合信頼性評価用のサンプルを作製し、高温高湿環境に暴露したときのボール接合部の接合寿命によって判定した。
実施例1〜48に係るボンディングワイヤは、Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層と、前記Pd被覆層の表面に形成されたCu表面層を有し、Niを含み、ワイヤ全体に対するNiの濃度が0.1〜1.2wt.%であり、前記Pd被覆層の厚さが0.015〜0.150μmであり、前記Cu表面層の厚さが0.0005〜0.0070μmである。これにより実施例1〜48に係るボンディングワイヤは、良好な接合信頼性、及び優れた耐キャピラリ摩耗性と表面疵耐性が得られることを確認した。一方、比較例1〜8は、Pd被覆層やCu表面層が存在しない場合や、これらが存在してもNi濃度、Pd被覆層、Cu表面層が上記範囲外である場合には、接合信頼性、耐キャピラリ摩耗性や、表面疵耐性改善において十分な改善効果が得られないことを示している。
Claims (5)
- Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層と、前記Pd被覆層の表面に形成されたCu表面層を有する半導体装置用ボンディングワイヤにおいて、Niを含み、ワイヤ全体に対するNiの濃度が0.1〜1.2wt.%であり、前記Pd被覆層の厚さが0.015〜0.150μmであり、前記Cu表面層の厚さが0.0005〜0.0070μmであることを特徴とする半導体装置用ボンディングワイヤ。
- 前記Pd被覆層と前記Cu表面層の間にAuとPdを含む合金被覆層を有し、前記合金被覆層の厚さが0.0005〜0.0500μmであることを特徴とする請求項1記載の半導体装置用ボンディングワイヤ。
- 前記Cu合金芯材がさらにZn、In、Pt及びPdから選ばれる少なくとも1種以上の元素を含み、前記元素の濃度が0.05〜0.50wt.%であることを特徴とする請求項1又は2記載の半導体装置用ボンディングワイヤ。
- さらにB、P、Mg、及びSnから選ばれる少なくとも1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が1〜110wt.ppmであることを特徴とする請求項1〜3のいずれか1項記載の半導体装置用ボンディングワイヤ。
- さらにGa、Geから選ばれる少なくとも1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が0.02〜1.2wt.%であることを特徴とする請求項1〜4のいずれか1項記載の半導体装置用ボンディングワイヤ。
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