JP6860542B2 - 半導体装置用ボンディングワイヤ - Google Patents
半導体装置用ボンディングワイヤ Download PDFInfo
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- JP6860542B2 JP6860542B2 JP2018222908A JP2018222908A JP6860542B2 JP 6860542 B2 JP6860542 B2 JP 6860542B2 JP 2018222908 A JP2018222908 A JP 2018222908A JP 2018222908 A JP2018222908 A JP 2018222908A JP 6860542 B2 JP6860542 B2 JP 6860542B2
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- 239000004065 semiconductor Substances 0.000 title claims description 20
- 239000011247 coating layer Substances 0.000 claims description 181
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 85
- 239000011162 core material Substances 0.000 claims description 85
- 239000002344 surface layer Substances 0.000 claims description 77
- 229910045601 alloy Inorganic materials 0.000 claims description 60
- 239000000956 alloy Substances 0.000 claims description 60
- 229910052763 palladium Inorganic materials 0.000 claims description 20
- 229910052738 indium Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 description 113
- 238000010438 heat treatment Methods 0.000 description 44
- 238000000034 method Methods 0.000 description 44
- 230000007547 defect Effects 0.000 description 28
- 238000011156 evaluation Methods 0.000 description 26
- 230000000694 effects Effects 0.000 description 24
- 239000010410 layer Substances 0.000 description 24
- 238000005304 joining Methods 0.000 description 17
- 238000007747 plating Methods 0.000 description 14
- 238000012360 testing method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 7
- 230000006872 improvement Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000005491 wire drawing Methods 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- 238000010408 sweeping Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- 238000005211 surface analysis Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
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- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
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- 238000000992 sputter etching Methods 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/01—Layered products comprising a layer of metal all layers being exclusively metallic
- B32B15/018—Layered products comprising a layer of metal all layers being exclusively metallic one layer being formed of a noble metal or a noble metal alloy
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/04—Alloys based on copper with zinc as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
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- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2924/10253—Silicon [Si]
Description
(全体構成)
本発明の実施形態に係るボンディングワイヤは、Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層と、前記Pd被覆層の表面に形成されたCu表面層を有する半導体装置用ボンディングワイヤにおいて、Niを含み、ワイヤ全体に対するNiの濃度が0.1〜1.2wt.%であり、前記Pd被覆層の厚さが0.015〜0.150μmであり、前記Cu表面層の厚さが0.0005〜0.0070μmである。本発明の実施形態に係るボンディングワイヤは、高い接合信頼性を確保しつつ、優れた耐キャピラリ摩耗性と表面疵耐性を有し、車載用デバイスに好適である。本発明の実施形態に係るボンディングワイヤはさらに、ボール形成性、ウェッジ接合性などの総合性能を満足することができる。
本発明の実施形態に係るボンディングワイヤの製造方法の一例を説明する。ボンディングワイヤは、芯材に用いるCu合金を製造した後、ワイヤ状に細く加工し、Pd被覆層、必要に応じてPd被覆層上にAu層を形成し、中間熱処理と最終熱処理を実施することで得られる。加工方法は、ダイスと呼ばれる冶具にワイヤを通すことで加工する伸線加工と呼ばれる手法を用いることができる。Pd被覆層、Au層を形成後、再度伸線加工と中間熱処理を行う場合もある。Cu合金芯材の製造方法、Pd被覆層、合金被覆層、Cu表面層の形成方法、中間熱処理と最終熱処理方法について詳しく説明する。
本発明は上記実施形態に限定されるものではなく、本発明の趣旨の範囲内で適宜変更することが可能である。
以下では、実施例を示しながら、本発明の実施形態に係るボンディングワイヤについて、具体的に説明する。
まずサンプルの作製方法について説明する。芯材の原材料となるCuは純度が99.99wt.%以上で残部が不可避不純物から構成されるものを用いた。Ni、Zn、In、Pt、Pd、B、P、Mg、Sn、Ga、Geは純度が99wt.%以上で残部が不可避不純物から構成されるものを用いた。
Cu合金芯材の表面積に対するPd被覆層および、Pd被覆層の表面積に対する合金被覆層の存在比率は、ボンディングワイヤの表面から深さ方向に向かってArイオンでスパッタしながら、AES装置を用いて面分析を行い、測定面積に対するPd被覆層および合金被覆層が存在する面積の割合によって算出した。面分析を行う領域は、ワイヤの長手方向に対して40μm以上、ワイヤ短手方向に対して10μm以上であることが好ましい。
接合信頼性は、接合信頼性評価用のサンプルを作製し、高温高湿環境に暴露したときのボール接合部の接合寿命によって判定した。
実施例1〜48に係るボンディングワイヤは、Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層と、前記Pd被覆層の表面に形成されたCu表面層を有し、Niを含み、ワイヤ全体に対するNiの濃度が0.1〜1.2wt.%であり、前記Pd被覆層の厚さが0.015〜0.150μmであり、前記Cu表面層の厚さが0.0005〜0.0070μmである。これにより実施例1〜48に係るボンディングワイヤは、良好な接合信頼性、及び優れた耐キャピラリ摩耗性と表面疵耐性が得られることを確認した。一方、比較例1〜8は、Pd被覆層やCu表面層が存在しない場合や、これらが存在してもNi濃度、Pd被覆層、Cu表面層が上記範囲外である場合には、接合信頼性、耐キャピラリ摩耗性や、表面疵耐性改善において十分な改善効果が得られないことを示している。
Claims (5)
- Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層と、前記Pd被覆層の表面に形成されたCu表面層を有する半導体装置用ボンディングワイヤにおいて、
Niを含み、ワイヤ全体に対するNiの濃度が0.1〜1.2wt.%であり、
前記Cu合金芯材と前記Pd被覆層の境界をPd濃度70at.%未満の領域を前記Cu合金芯材、Pd濃度70at.%以上の領域を前記Pd被覆層と定義し、前記Pd被覆層と前記Cu表面層との境界をCu濃度3at.%未満の領域を前記Pd被覆層、Cu濃度3at.%以上の領域を前記Cu表面層と定義した場合の、前記Pd被覆層の厚さが0.015〜0.150μmであり、前記Cu表面層の厚さが0.0005〜0.0070μmであり、
前記Cu表面層のCuは前記Cu合金芯材のCuが前記Pd被覆層の表面に拡散したものである
ことを特徴とする半導体装置用ボンディングワイヤ。 - Cu合金芯材と、前記Cu合金芯材の表面に形成されたPd被覆層と、前記Pd被覆層の表面に形成されたAuとPdを含む合金被覆層と、前記合金被覆層の表面に形成されたCu表面層を有する半導体装置用ボンディングワイヤにおいて、
Niを含み、ワイヤ全体に対するNiの濃度が0.1〜1.2wt.%であり、
前記Cu合金芯材と前記Pd被覆層の境界をPd濃度70at.%未満の領域を前記Cu合金芯材、Pd濃度70at.%以上の領域を前記Pd被覆層と定義し、前記Pd被覆層と前記合金被覆層との境界をAu濃度10at.%未満の領域を前記Pd被覆層、Au濃度10at.%以上の領域を前記合金被覆層と定義し、前記合金被覆層と前記Cu表面層との境界をCu濃度3at.%未満の領域を前記合金被覆層、Cu濃度3at.%以上の領域を前記Cu表面層と定義した場合の、前記Pd被覆層の厚さが0.015〜0.150μmであり、前記合金被覆層の厚さが0.0005〜0.0500μmであり、前記Cu表面層の厚さが0.0005〜0.0070μmであり、
前記Cu表面層のCuは前記Cu合金芯材のCuが前記合金被覆層の表面に拡散したものである
ことを特徴とする半導体装置用ボンディングワイヤ。 - 前記Cu合金芯材がさらにZn、In、Pt及びPdから選ばれる少なくとも1種以上の元素を含み、前記元素の濃度が0.05〜0.50wt.%であることを特徴とする請求項1又は2記載の半導体装置用ボンディングワイヤ。
- さらにB、P、Mg、及びSnから選ばれる少なくとも1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が1〜110wt.ppmであることを特徴とする請求項1〜3のいずれか1項記載の半導体装置用ボンディングワイヤ。
- さらにGa、Geから選ばれる少なくとも1種以上の元素を含み、ワイヤ全体に対する前記元素の濃度が0.02〜1.2wt.%であることを特徴とする請求項1〜4のいずれか1項記載の半導体装置用ボンディングワイヤ。
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