WO2017123153A3 - Coated wire - Google Patents

Coated wire Download PDF

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Publication number
WO2017123153A3
WO2017123153A3 PCT/SG2017/000001 SG2017000001W WO2017123153A3 WO 2017123153 A3 WO2017123153 A3 WO 2017123153A3 SG 2017000001 W SG2017000001 W SG 2017000001W WO 2017123153 A3 WO2017123153 A3 WO 2017123153A3
Authority
WO
WIPO (PCT)
Prior art keywords
range
layer
amount
weight
ppm
Prior art date
Application number
PCT/SG2017/000001
Other languages
French (fr)
Other versions
WO2017123153A2 (en
Inventor
Jin Zhi LIAO
Xi Zhang
Abito Danila BAYARAS
Sureshkumar VINOBAJI
Yee Weon LIM
Chee Wei TOK
Original Assignee
Heraeus Materials Singapore Pte., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Materials Singapore Pte., Ltd. filed Critical Heraeus Materials Singapore Pte., Ltd.
Priority to KR1020187022713A priority Critical patent/KR102125160B1/en
Priority to JP2018535859A priority patent/JP6622415B2/en
Priority to CN201780006340.7A priority patent/CN108474058A/en
Publication of WO2017123153A2 publication Critical patent/WO2017123153A2/en
Publication of WO2017123153A3 publication Critical patent/WO2017123153A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302—Cu as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/40—Making wire or rods for soldering or welding
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4557—Plural coating layers
    • H01L2224/45572—Two-layer stack coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Wire Bonding (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

A wire comprising a wire core with a surface, the wire core having a coating layer superimposed on its surface, wherein the wire core itself consists of: (a) silver in an amount of from 0.1 to 0.3 wt.-%, (b) copper in an amount in the range of from 99.64 to 99.9 wt.-%, (c) phosphorus in an amount in the range of from 0 to 100 wt.-ppm, and (d) further components (components other than silver, copper and phosphorus) in an amount in the range of from 0 to 500 wt.-ppm, wherein the individual amount of any further component is less than 30 wt.-ppm, wherein all amounts in wt.-% and wt.-ppm are based on the total weight of the core, and wherein the coating layer is a double-layer comprised of an inner layer of palladium and an adjacent outer layer of gold, wherein the weight of the inner palladium layer is in the range of 1.5 to 2.5 wt.-%, relative to the weight of the wire core, and wherein the weight of the outer gold layer is in the range of 0.09 to 0.18 wt.-%, relative to the weight of the wire core.
PCT/SG2017/000001 2016-01-15 2017-01-13 Coated wire WO2017123153A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020187022713A KR102125160B1 (en) 2016-01-15 2017-01-13 Coated wire
JP2018535859A JP6622415B2 (en) 2016-01-15 2017-01-13 Coated wire
CN201780006340.7A CN108474058A (en) 2016-01-15 2017-01-13 Coated wire rod

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG10201600329S 2016-01-15
SG10201600329SA SG10201600329SA (en) 2016-01-15 2016-01-15 Coated wire

Publications (2)

Publication Number Publication Date
WO2017123153A2 WO2017123153A2 (en) 2017-07-20
WO2017123153A3 true WO2017123153A3 (en) 2017-10-19

Family

ID=59311375

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/SG2017/000001 WO2017123153A2 (en) 2016-01-15 2017-01-13 Coated wire

Country Status (6)

Country Link
JP (1) JP6622415B2 (en)
KR (1) KR102125160B1 (en)
CN (1) CN108474058A (en)
SG (1) SG10201600329SA (en)
TW (1) TW201736606A (en)
WO (1) WO2017123153A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107794402A (en) * 2017-10-24 2018-03-13 上海沃垦节能新材料科技有限公司 A kind of preparation method of copper alloy with high strength and high conductivity wire rod
WO2020101566A1 (en) * 2018-11-16 2020-05-22 Heraeus Deutschland GmbH & Co. KG Coated wire
CN112930590B (en) * 2018-12-12 2024-01-02 贺利氏材料新加坡有限公司 Method for electrically connecting contact surfaces of electronic components
WO2020218968A1 (en) * 2019-04-26 2020-10-29 Heraeus Materials Singapore Pte. Ltd. Coated wire

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012036490A (en) * 2010-08-11 2012-02-23 Tanaka Electronics Ind Co Ltd Gold-coated copper wire for ball bonding
EP2461358A1 (en) * 2009-07-30 2012-06-06 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor
WO2014178792A1 (en) * 2013-05-03 2014-11-06 Heraeus Materials Singapore Pte., Ltd. Copper bond wire and method of making the same
US20140329106A1 (en) * 2012-01-25 2014-11-06 Nippon Micrometal Corporation Bonding wire and method for manufacturing same
WO2015163297A1 (en) * 2014-04-21 2015-10-29 新日鉄住金マテリアルズ株式会社 Bonding wire for semiconductor device
JP5807992B1 (en) * 2015-02-23 2015-11-10 田中電子工業株式会社 Palladium (Pd) coated copper wire for ball bonding
CN103219312B (en) * 2013-03-01 2015-12-23 溧阳市虹翔机械制造有限公司 A kind ofly plate the gold-plated two coating bonding brass wires of palladium
WO2016005068A1 (en) * 2014-07-11 2016-01-14 Heraeus Deutschland GmbH & Co. KG Process for manufacturing of a thick copper wire for bonding applications

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102130067B (en) * 2010-12-31 2012-05-02 四川威纳尔特种电子材料有限公司 Surface palladium-plated bonding brass wire
JP5088981B1 (en) * 2011-12-21 2012-12-05 田中電子工業株式会社 Pd coated copper ball bonding wire
KR101366688B1 (en) * 2012-04-30 2014-02-25 엠케이전자 주식회사 Copper-based bonding wire and semiconductor package including the same

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2461358A1 (en) * 2009-07-30 2012-06-06 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor
JP2012036490A (en) * 2010-08-11 2012-02-23 Tanaka Electronics Ind Co Ltd Gold-coated copper wire for ball bonding
US20140329106A1 (en) * 2012-01-25 2014-11-06 Nippon Micrometal Corporation Bonding wire and method for manufacturing same
CN103219312B (en) * 2013-03-01 2015-12-23 溧阳市虹翔机械制造有限公司 A kind ofly plate the gold-plated two coating bonding brass wires of palladium
WO2014178792A1 (en) * 2013-05-03 2014-11-06 Heraeus Materials Singapore Pte., Ltd. Copper bond wire and method of making the same
WO2015163297A1 (en) * 2014-04-21 2015-10-29 新日鉄住金マテリアルズ株式会社 Bonding wire for semiconductor device
WO2016005068A1 (en) * 2014-07-11 2016-01-14 Heraeus Deutschland GmbH & Co. KG Process for manufacturing of a thick copper wire for bonding applications
JP5807992B1 (en) * 2015-02-23 2015-11-10 田中電子工業株式会社 Palladium (Pd) coated copper wire for ball bonding

Also Published As

Publication number Publication date
TW201736606A (en) 2017-10-16
SG10201600329SA (en) 2017-08-30
JP2019508882A (en) 2019-03-28
WO2017123153A2 (en) 2017-07-20
KR20180101468A (en) 2018-09-12
KR102125160B1 (en) 2020-06-19
JP6622415B2 (en) 2019-12-18
CN108474058A (en) 2018-08-31

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