WO2015093306A1 - 半導体装置用ボンディングワイヤ - Google Patents

半導体装置用ボンディングワイヤ Download PDF

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Publication number
WO2015093306A1
WO2015093306A1 PCT/JP2014/082164 JP2014082164W WO2015093306A1 WO 2015093306 A1 WO2015093306 A1 WO 2015093306A1 JP 2014082164 W JP2014082164 W JP 2014082164W WO 2015093306 A1 WO2015093306 A1 WO 2015093306A1
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Prior art keywords
wire
concentration
layer
bonding
core material
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PCT/JP2014/082164
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English (en)
French (fr)
Inventor
宇野　智裕
快朗 萩原
哲哉 小山田
大造 小田
Original Assignee
新日鉄住金マテリアルズ株式会社
日鉄住金マイクロメタル株式会社
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Application filed by 新日鉄住金マテリアルズ株式会社, 日鉄住金マイクロメタル株式会社 filed Critical 新日鉄住金マテリアルズ株式会社
Priority to KR1020167018870A priority Critical patent/KR102013214B1/ko
Priority to CN201480068797.7A priority patent/CN105830205B/zh
Priority to US15/105,707 priority patent/US9812421B2/en
Priority to KR1020197024020A priority patent/KR20190100426A/ko
Priority to TW107143058A priority patent/TWI700754B/zh
Priority to TW103143290A priority patent/TWI647766B/zh
Publication of WO2015093306A1 publication Critical patent/WO2015093306A1/ja

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    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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Definitions

  • the present invention relates to a bonding wire for a semiconductor device used for connecting an electrode on a semiconductor element and wiring of a circuit wiring board (lead frame, substrate, tape, etc.).
  • bonding wires fine wires (bonding wires) with a wire diameter of about 20 to 50 ⁇ m are mainly used as bonding wires for semiconductor devices (hereinafter referred to as bonding wires) for bonding between electrodes on semiconductor elements and external terminals.
  • the bonding wire is generally bonded by a thermocompression bonding method using ultrasonic waves.
  • a general-purpose bonding apparatus, a capillary jig used for connection through a bonding wire, or the like is used.
  • arc discharge is generated to heat and melt the tip of the wire, and after forming a ball portion by surface tension, on the electrode of the semiconductor element heated within a range of 150 to 300 ° C., This ball part is bonded by pressure bonding (ball bonding).
  • the wire is directly joined to the external lead side by ultrasonic pressure bonding (wedge joining).
  • the material of the bonding wire has so far mainly used high purity 4N-based (purity> 99.99 mass%) gold. However, since gold is expensive, a bonding wire of another kind of metal having a low material cost is desired.
  • Patent Document 1 discloses a core material mainly composed of copper, the core material provided on the core material, and components and composition. A bonding wire having one or both of different metals M and an outer layer containing copper is disclosed.
  • an object of the present invention is to provide a bonding wire that can reduce the occurrence of abnormal loops.
  • the bonding wire according to claim 1 of the present invention is formed on the surface of the core material containing more than 50 mol% of metal M and Ni, Pd, the metal M and inevitable impurities, and the concentration of Ni is An intermediate layer of 15 to 80 mol%, and a coating layer formed on the intermediate layer and made of Ni, Pd, and inevitable impurities, and the concentration of Pd is 50 to 100 mol%, and the metal M is Cu or It is Ag, The Ni density
  • the coating layer further contains Au, is formed on the coating layer and is made of an alloy containing Au and Pd, and the concentration of the Au is 10 to 70 mol%. And a surface layer in which the total concentration of Pd is 80 mol% or more, and the Au concentration of the coating layer is lower than the Au concentration of the surface layer.
  • the intermediate layer alleviates the difference in deformation resistance between the core material and the coating layer, the occurrence of a snake loop as an abnormal loop can be reduced.
  • the surface layer suppresses sulfidation and oxidation of the wire surface and reduces sliding resistance, so that the occurrence of a sagging loop can be reduced in addition to the snake loop as an abnormal loop.
  • FIG. 1A is a figure which shows a snake loop defect
  • FIG. 1B is a sagging loop defect.
  • the bonding wire according to the present embodiment includes a core material containing more than 50 mol% of metal M, an intermediate layer formed on the core material, and a coating layer formed on the intermediate layer.
  • the metal M is Cu or Ag.
  • the intermediate layer is made of Ni, Pd, the metal M and unavoidable impurities, and the Ni concentration is 15 to 80 mol%.
  • the coating layer is made of Ni, Pd, and inevitable impurities, and the concentration of the Pd is 50 to 100 mol%.
  • the Ni concentration of the coating layer is lower than the Ni concentration of the intermediate layer. In this specification, the concentration is mol%, and is the maximum concentration in each layer when measured in the depth direction based on Auger Electron Spectroscopy (AES), excluding the core material.
  • AES Auger Electron Spectroscopy
  • the intermediate layer is an alloy containing Ni and Pd, and Cu or Ag, and the concentration of Ni is 15 to 80 mol%, and Ni is contained more than the coating layer.
  • the strength and recrystallization temperature of the intermediate layer are about the intermediate between the core material and the coating layer.
  • the abnormal loop will be described with reference to FIG. 1A.
  • the bonding wire 10 shown in FIG. 1A is bonded by a ball bond 12 and a wedge bond 14, and a snake loop 16 is generated as an abnormal loop.
  • the snake loop 16 has a shape in which the bonding wire 10 is bent a plurality of times in a descending region near the wedge joint 14.
  • the snake loop 16 is frequently generated in a trapezoidal loop having a large height difference between the ball joint 12 and the wedge joint 14 and a long span.
  • the occurrence frequency is high when the height difference between the ball joint 12 and the wedge joint 14 is 500 ⁇ m or more, the distance (span) is 3 mm or more, and the length of the descending region is 800 ⁇ m.
  • the Ni concentration when the Ni concentration is 15 to 80 mol%, the difference in deformation resistance between the core material and the coating layer can be more reliably mitigated. If the Ni concentration exceeds 80 mol% in the intermediate layer, bubbles are generated in the ball portion.
  • the intermediate layer preferably has a thickness of 8 to 80 nm. Since the bonding wire has a thickness of 8 to 80 nm, the difference in deformation resistance between the core material and the coating layer can be more reliably mitigated. If the thickness of the intermediate layer is more than 80 nm, when the bonding wire is connected at a low temperature, the diffusion rate at the bonding interface is slowed down, so that the strength of the wedge bonding is lowered.
  • this region is used as the coating layer in this specification as long as the Pd concentration is 50 mol% or more.
  • the coating layer has a Pd concentration of 50 to 100 mol%, it is possible to further suppress the oxidation of the bonding wire surface.
  • the surface of the bonding wire is oxidized, so that the strength of wedge bonding is reduced, and the surface of the wire is easily corroded when sealed with resin.
  • the coating layer may contain metal M.
  • the coating layer contains the metal M, the effect of reducing lip-shaped damage that becomes a problem near the boundary between the ball portion and the neck portion is enhanced.
  • the core material may contain one or more elements selected from P, Ti, B, and Ag.
  • one or more elements selected from P, Ti, B, and Ag improve the roundness of the pressure-bonded ball by having the total element concentration in the entire wire in the range of 0.0005 to 0.02 mass%. can do.
  • a narrow pitch connection is required in the most dense mounting in recent years. Therefore, the deformed shape of the ball joint is important, and it is necessary to suppress irregularities such as petals and eccentricity and to improve the roundness.
  • the core material may contain one or more elements selected from Pd and Ni when the metal M is Cu.
  • one or more elements selected from Pd and Ni can improve the bonding reliability because the total concentration of the element in the entire wire is in the range of 0.2 to 2.0 mass%.
  • joint reliability often becomes a problem at the joint between the bonding wire and the electrode when used at a high temperature such as an automobile semiconductor.
  • the bonding reliability is evaluated by an acceleration test such as a high-temperature heating test, for example, a decrease in strength of the bonding portion and an increase in electrical resistance.
  • the core material may contain one or more elements selected from Pd, Ni, and Cu.
  • one or more elements selected from Pd, Ni, and Cu can improve the bonding reliability because the total concentration of the elements in the entire wire is in the range of 0.5 to 5.0 mass%. .
  • the bonding wire according to the present embodiment may include a surface layer made of an alloy containing Au and Pd on the coating layer.
  • the coating layer further contains Au.
  • the coating layer may contain a small amount of Ni and Cu.
  • the surface layer has an Au concentration of 10 to 70 mol% and a total concentration of Au and Pd of 80 mol% or more. Even if the Pd concentration is 50 mol% or more at the boundary with the coating layer, the surface layer is used in this specification as long as the Au concentration is 10 mol% or more.
  • the surface layer made of an alloy containing Au and Pd can reduce sliding resistance by suppressing sulfidation and oxidation of the wire surface. Therefore, by providing the bonding wire with the surface layer, it is possible to reduce the occurrence of the sagging loop 18 shown in FIG. 1B in addition to the snake loop.
  • the sagging loop 18 is frequently generated in a trapezoidal loop having a large height difference between the ball joint 12 and the wedge joint 14 and a long span.
  • the sagging loop 18 has a gentle meandering shape as compared to the snake loop 16.
  • the surface layer has a concentration of Au of 10 to 70 mol% and a total concentration of Au and Pd of 80 mol% or more, so that the sliding resistance can be more reliably reduced.
  • the Au concentration is more than 70 mol%, a defect in which the ball portion becomes elliptical occurs.
  • Such an elliptical ball portion is not suitable for high-density mounting in which a ball is bonded to a small electrode.
  • the total thickness of the surface layer, the coating layer, and the intermediate layer is preferably 25 to 200 nm.
  • the bonding wire can suppress the peeling failure which is a turn of a wedge junction part, and can improve wedge bondability.
  • the total thickness of the surface layer, the coating layer, and the intermediate layer is more preferably 40 to 150 nm because the wedge bondability can be improved more reliably.
  • the thickness of the surface layer is preferably 3 to 30 nm.
  • Examples of methods for forming the intermediate layer, the coating layer, and the surface layer on the surface of the copper core include plating, vapor deposition, and melting.
  • the plating method either electrolytic plating or electroless plating can be used.
  • strike plating or flash plating the plating speed is high and the adhesion to the base is good.
  • Solutions used in electroless plating methods are classified into substitutional type and reduction type. When the film is thin, substitutional plating alone is sufficient, but when forming a thick film, reduction type is used after substitutional plating. It is effective to apply plating step by step.
  • the electroless plating method has a simple apparatus and is easy, but requires more time than the electrolytic plating method.
  • vapor deposition method physical adsorption such as sputtering, ion plating and vacuum deposition, and chemical adsorption such as plasma CVD can be used. All of them are dry-type, and cleaning after film formation is unnecessary, and there is no concern about surface contamination during cleaning.
  • both the method of forming a desired film with a target wire diameter and the method of drawing a film on a thick core material and then drawing multiple times to the target wire diameter It is valid.
  • manufacturing, quality control and the like are simple, and the latter film formation and wire drawing are advantageous in improving the adhesion between the film and the core material.
  • a method of forming a film while continuously sweeping a wire into an electrolytic plating solution on a copper wire of a target wire diameter, or thick copper in an electrolytic or electroless plating bath For example, a method of drawing the wire to reach the final diameter after immersing the wire to form a film is possible.
  • the heat treatment step interdiffusion of metal elements contained in each component is promoted at each interface between the core material and the intermediate layer, the intermediate layer and the cover layer, and the cover layer and the surface layer.
  • it is effective to perform the heat treatment one or more times.
  • a manufacturing technique for controlling the concentration on the order of%, the film thickness on the order of nm, etc. with strict accuracy is required.
  • the heat treatment process is classified into annealing immediately after film formation, annealing in the middle of processing, and finish annealing at the final diameter, and it is important to select and use them properly.
  • heat treatment is performed while continuously sweeping the wire, and the temperature inside the furnace, which is a general heat treatment, is not constant, but a temperature gradient is provided in the furnace.
  • Bonding wires having a core material, an intermediate layer, a covering layer, and a surface layer can be easily mass-produced. Specific examples include a method of introducing a temperature gradient locally and a method of changing the temperature in the furnace. In order to suppress the surface oxidation of the bonding wire, it is also effective to heat while flowing an inert gas such as N 2 or Ar into the furnace.
  • a positive temperature gradient near the furnace inlet (temperature rises with respect to the wire sweep direction), a stable temperature range, and a negative temperature gradient near the furnace outlet (temperature falls with respect to the wire sweep direction) It is effective to give a temperature gradient in a plurality of regions. This improves adhesion without causing separation of each layer and core material in the vicinity of the furnace inlet, promotes diffusion of each metal element in a stable temperature region to form a desired concentration gradient, and further in the vicinity of the furnace outlet. By suppressing excessive oxidation of copper on the surface, it is possible to improve the bondability and loop controllability of the obtained bonding wire. In order to obtain such an effect, it is desirable to provide a temperature gradient at the entrance / exit of 10 ° C./cm or more.
  • the method of changing the temperature it is also effective to create a temperature distribution by dividing the furnace into a plurality of regions and performing different temperature control in each region. For example, by dividing the interior of the furnace into three or more locations, independently controlling the temperature, and making both ends of the furnace cooler than the central portion, the same improvement effect as in the case of the temperature gradient can be obtained. Further, in order to suppress the surface oxidation of the bonding wire, the bonding strength of the wedge joint can be increased by setting the outlet side of the furnace to a low temperature at which the oxidation rate of copper is low.
  • the melting method is a method in which either one of the layers or the core material is melted and cast, and is excellent in productivity by drawing after connecting each layer and the core material with a large diameter of about 1 to 50 mm.
  • the alloy component design of each layer is easy, and characteristics such as strength and bondability can be easily improved.
  • a method of forming each layer by sequentially casting a metal constituting each molten layer around a core material prepared in advance, and a hollow cylinder composed of a previously prepared intermediate layer, coating layer, and surface layer It is divided into a method of forming a core material by casting, for example, molten copper or a copper alloy into the hollow portion.
  • the method of casting a copper core into the latter hollow cylinder can easily form a stable concentration gradient of copper in the intermediate layer and the coating layer.
  • the melting method it is possible to omit the heat treatment work for diffusing copper in the intermediate layer and the coating layer, but by applying a heat treatment to adjust the distribution of copper in the intermediate layer and the coating layer. Further improvement in characteristics can be expected.
  • the heat treatment temperature is low in order to suppress body diffusion, grain boundary diffusion, and the like of the metal M in the coating layer.
  • the heat treatment is performed twice or more, the intermediate heat treatment of the thick wire in the middle of processing is set to a high temperature, and the final heat treatment of the final wire diameter is lowered to form a coating layer not containing the metal M. It is effective.
  • the difference between the wire diameters for performing the two kinds of heat treatment is twice or more and the temperature difference is 100 ° C. or more.
  • a pure N 2 gas can be used as the shield gas used when forming the ball portion, in addition to the standard 5 vol% H 2 + N 2 gas.
  • sample Cu and Ag used as the core material of the bonding wire are high purity materials with a purity of about 99.99 mass% or more, and the purity of Pd for the covering layer, Ni for the intermediate layer, and Au for the surface layer is 99.9 mass% or more.
  • a plating solution was prepared. In the step of melting the core material, an appropriate amount of alloy element was added.
  • a thick wire having a diameter of about 1 to 3 mm was prepared, and an intermediate layer, a covering layer, a surface layer, and the like were formed on the wire surface by an electrolytic plating method.
  • the electrolytic plating solution used was a plating solution that is commercially available for electronic parts and semiconductors.
  • a two-step process was performed in the order of formation of the coating layer by Pd plating after forming the intermediate layer by Ni plating.
  • the intermediate layer is formed by Ni plating
  • the coating layer is formed by Pd plating
  • the surface layer is formed by Au plating.
  • a step process was performed. In order to improve the adhesion, a heat treatment was performed after the final plating treatment as necessary. The heating conditions were batch heating for 30 minutes at a low temperature of 150 to 300 ° C. in a nitrogen atmosphere. Further, if necessary, heat treatment was performed after forming the intermediate layer. The heating conditions were within the above range.
  • the final wire diameter was reduced to 18 to 20 ⁇ m by wire drawing.
  • the drawing speed was in the range of 10 to 100 m / min, and the drawing dies used had individual area reduction rates of 3 to 15%.
  • finish annealing was performed so that the processing strain was removed and the elongation value was in the range of 5 to 20%.
  • intermediate annealing was performed, and wire drawing was further performed.
  • a commercially available automatic wire bonder manufactured by K & S was used to perform ball / wedge bonding.
  • a ball portion was produced at the tip of the wire by arc discharge, the ball portion was bonded to the electrode film on the silicon substrate, and the other end of the wire was wedge-bonded to the lead terminal.
  • 5 vol% H 2 + N 2 gas was sprayed on the wire tip.
  • the bonding temperature was set at a normal temperature of 175 ° C. and a low temperature of 150 ° C.
  • the electrode on the silicon substrate as the bonding partner was an aluminum electrode (Al-0.5% Cu film) with a thickness of 0.8 ⁇ m.
  • the Au / Pd electrode on the lead frame was used as the partner for wedge bonding.
  • AES inductively coupled plasma
  • concentration of the alloy element in the bonding wire is determined by the electron beam microanalyzer (EPMA: Electron Probe MicroAnalyser), energy dispersive X-ray analysis (EDX: Energy dispersive X-ray spectrometry), and the average value of concentrations determined by an analysis method using AES were used.
  • EPMA Electron Probe MicroAnalyser
  • EDX Energy dispersive X-ray spectrometry
  • the corresponding elements are Pd, Ni, and Au elements.
  • the element contained in the core material is an element other than Pd, Ni, and Au and is different from the elements in the intermediate layer, the coating layer, and the surface layer, the concentration measured by ICP analysis of the entire wire was used.
  • the range it can be used for ICs whose reliability requirements are not strict, so the proportion of bonding wires whose electrical resistance has increased by more than 3 times is less than 5% and bonding wires whose electrical resistance has increased by more than 1.5 times If the ratio is 10% or more and less than 30%, there is no problem in practical use.So, if the ratio of bonding wire whose electrical resistance has increased 1.5 times or more is less than 10%, it is good. 1 and 2 are shown in the column of “high temperature reliability”.
  • the evaluation of the snake loop failure was evaluated with two types of loops: a middle span high step and a long span high step.
  • the trapezoidal loop was connected so that the wire length was 3.5 mm, the descending zone length was 0.5 mm, and the height difference from the wedge joint to the highest position of the loop was 0.7 mm.
  • the trapezoidal loop was connected so that the wire length was 5 mm, the length of the descending zone was 0.7 mm, and the height difference from the wedge joint to the highest position of the loop was 0.8 mm.
  • the wire diameter is 20 ⁇ m.
  • the descending area of the loop was observed from above with an optical microscope, and if the bending in the descending area of one loop was more than twice, it was determined that the snake loop was defective, and the occurrence frequency in the 500 loop connection was evaluated. If the frequency of occurrence is over 10%, it is judged as defective and marked with x, and if it is over 5% and less than 10%, mass productivity is a concern. When the mark was 0 or less than 2%, the loop shape was judged to be stable, and the mark ⁇ was displayed in the “snake loop” column in Tables 1 and 2.
  • the trapezoidal loop was connected so that the wire length was 5 mm, the descending zone length was 1.5 mm, and the height difference from the wedge joint to the highest position of the loop was 0.7 mm.
  • the wire diameter is 20 ⁇ m.
  • the loop was observed from above with an optical microscope, and when the loop meandered with a long period of 0.2 mm or more, it was determined that the sagging loop was defective, and the occurrence frequency in 400 loop connections was evaluated. If the frequency of occurrence is over 10%, it is judged as defective and marked with x, and if it is over 5% and less than 10%, mass productivity is a concern. Since it was good, it was judged that a sagging loop defect was not a problem when it was 0 or less than 2%, and it was displayed in the “Sagging loop” column of Table 2 with a mark.
  • ⁇ ⁇ Wedge bondability was evaluated based on the frequency of occurrence of turning defects when bonding wires were bonded to lead electrodes. After manufacturing the bonding wire, it was stored in the air in a clean room at room temperature for 30 days in a spool case. Under the joining conditions, the ultrasonic power was slightly reduced, and the stage temperature was lowered to 160 ° C. to induce non-sticking of the wedge joint. The frequency of non-sticking was evaluated by 1000 bondings. If the number of turnover defects is 10 or more, improvement is required. Therefore, ⁇ mark, ⁇ mark for 4-9 pieces, almost good for 1-3 pieces, ⁇ mark, no defects. In this case, it was judged that the wedge bondability was excellent, and the mark “ ⁇ ” was displayed in the “wedge bondability” column in Tables 1 and 2.
  • the bonding wires of Examples 19 to 35 are composed of a core material, an intermediate layer, a coating layer, and a surface layer.
  • the concentration of Ni in the intermediate layer is 15 to 80 mol%
  • the concentration of Au in the surface layer is 10 to 70 mol%. It was confirmed that the snake loop defect and the sagging loop defect can be reduced when the total concentration of Au and Pd is 80 mol% or more.
  • Comparative Examples 7 and 9 that did not include an intermediate layer, or in Comparative Examples 8 and 10 in which the concentration of Ni in the intermediate layer was outside the above range snake loop defects and sagging loop defects occurred frequently. Further, in Comparative Example 11 in which the Au concentration in the surface layer was out of the above range, a sag loop failure occurred although a snake loop failure could be reduced.
  • the bonding wires of Examples 19 to 21 and 24 to 35 it was confirmed that the turning-up defects in the wedge bonding can be reduced when the total thickness of the surface layer, the covering layer, and the intermediate layer is 25 to 200 nm. Furthermore, the bonding wires of Examples 19 to 21, 24 to 29, and 31 to 35 have a total thickness of the surface layer, the covering layer, and the intermediate layer of 40 to 150 nm. It was confirmed that it can be reduced.
  • the core material is one or more elements selected from P, Ti, B, and Ag, where the metal M is Cu It was confirmed that the shape of the press-bonded ball was good when the element concentration in the entire wire was in the range of 0.0005 to 0.02 mass% in total.
  • the core material is such that the metal M is Cu, contains one or more elements selected from Pd and Ni, and the concentration of the element in the entire wire is It was confirmed that the reliability (high temperature reliability) after the heat treatment was high when the total amount was in the range of 0.2 to 2.0 mass%.
  • the core material is such that the metal M is Ag and contains one or more elements selected from Pd, Ni and Cu, and occupies the entire wire It was confirmed that the reliability after heat treatment was high when the concentration ranged from 0.5 to 5.0 mass% in total.

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Abstract

　異常ループの発生を低減することができるボンディングワイヤを提供する。金属Mを50mol％超含む芯材と、前記芯材の表面に形成され、Ni、Pd、前記金属M及び不可避不純物からなり、前記Niの濃度が15～80mol％である中間層と、前記中間層上に形成され、Ni、Pd及び不可避不純物からなり、前記Pdの濃度が50～100mol％である被覆層とを備え、前記金属MがCu又はAgであり、前記被覆層のNi濃度が前記中間層のNi濃度よりも低いことを特徴とする。

Description

半導体装置用ボンディングワイヤ
　本発明は、半導体素子上の電極と、回路配線基板(リードフレーム、基板、テープ等)の配線とを接続するために利用される半導体装置用ボンディングワイヤに関するものである。
　現在、半導体素子上の電極と、外部端子との間を接合する半導体装置用ボンディングワイヤ(以下、ボンディングワイヤ)として、線径20～50μm程度の細線(ボンディングワイヤ)が主として使用されている。ボンディングワイヤは超音波併用熱圧着方式で接合するのが一般的である。本方式では、汎用ボンディング装置、ボンディングワイヤをその内部に通して接続に用いるキャピラリ冶具等が用いられる。ボンディングワイヤを接続するには、まず、アーク放電を生じさせてワイヤ先端を加熱溶融し、表面張力によりボール部を形成した後に、150～300℃の範囲内で加熱した半導体素子の電極上に、このボール部を圧着接合（ボール接合）する。次いで、直接ワイヤを外部リード側に超音波圧着により接合（ウェッジ接合）する。
　近年、半導体実装の構造・材料・接続技術等は急速に多様化しており、例えば、実装構造では、現行のリードフレームを使用したQFP(Quad Flat Packaging)に加え、基板、ポリイミドテープ等を使用するBGA(Ball Grid Array)、CSP(Chip Scale Packaging)等の新しい形態が実用化され、ループ性、接合性、量産使用性等をより向上したボンディングワイヤが求められている。
　ボンディングワイヤの素材は、これまでのところ高純度4N系(純度>99.99mass%)の金が主に用いられている。しかし、金は高価であるため、材料費が安価である他種金属のボンディングワイヤが所望されている。
　材料費が安価で、電気伝導性に優れたボンディングワイヤとして、特許文献１には、銅を主成分とする芯材と、前記芯材の上に設けられた、前記芯材と、成分及び組成のいずれか一方又は両方の異なる金属Mと銅を含有する外層とを有するボンディングワイヤが開示されている。
特開2010-212697号公報
　しかしながら上記特許文献１の場合、ループ形成時において、芯材と外層のひずみや変形抵抗の違いにより、ボンディングワイヤが変形し異常ループが発生する、という懸念があった。
　そこで本発明は、異常ループの発生を低減することができるボンディングワイヤを提供することを目的とする。
　本発明の請求項１に係るボンディングワイヤは、金属Mを50mol％超含む芯材と、前記芯材の表面に形成され、Ni、Pd、前記金属M及び不可避不純物からなり、前記Niの濃度が15～80mol％である中間層と、前記中間層上に形成され、Ni、Pd及び不可避不純物からなり、前記Pdの濃度が50～100mol％である被覆層とを備え、前記金属MがCu又はAgであり、前記被覆層のNi濃度が前記中間層のNi濃度よりも低いことを特徴とする。
　また本発明の請求項３に係るボンディングワイヤは、前記被覆層がさらにAuを含み、前記被覆層上に形成され、AuとPdを含む合金からなり、前記Auの濃度が10～70mol％、AuとPdの合計濃度が80mol％以上である表面層を備え、前記被覆層のAu濃度は、前記表面層のAu濃度よりも低いことを特徴とする。
　本発明の請求項１によれば、中間層が芯材と被覆層の変形抵抗の相違を緩和することにより、異常ループとしてスネークループの発生を低減することができる。
　本発明の請求項３によれば、表面層がワイヤ表面の硫化及び酸化を抑制して摺動抵抗を低減することにより、異常ループとしてスネークループに加え、サギングループの発生を低減することができる。
ボンディングワイヤの異常変形による不良の形態を示す模式図であり、図１Ａはスネークループ不良、図１Ｂはサギングループ不良を示す図である。
１．実施形態
　（全体構成）
　以下、本発明の実施形態について詳細に説明する。本実施形態に係るボンディングワイヤは、金属Mを50mol％超含む芯材と、芯材上に形成された中間層と、当該中間層上に形成された被覆層とを備える。金属Mは、Cu又はAgである。
　中間層は、Ni、Pd、前記金属M及び不可避不純物からなり、前記Niの濃度が15～80mol％である。被覆層は、Ni、Pd及び不可避不純物からなり、前記Pdの濃度が50～100mol％である。被覆層のNi濃度は前記中間層のNi濃度よりも低い。なお、本明細書において濃度は、mol％であり、芯材を除いて、オージェ電子分光法(AES：Auger Electron Spectroscopy)に基づき深さ方向に測定したときの、各層における最高濃度とする。
　芯材を構成するCu又はAgと、被覆層に含まれるPdは、強度で２倍以上、再結晶温度が400℃以上異なる。これに対しNiは、強度及び再結晶温度が、Cu又はAgとPdの中間程度である。したがって本実施形態の場合、中間層は、NiとPd、及び、Cu又はAgを含む合金であり、Niの濃度が15～80mol％であり、被覆層に比べより多くNiが含まれることにより、中間層の強度及び再結晶温度が、芯材と被覆層の中間程度となる。これによりボンディングワイヤは、中間層が芯材と被覆層の変形抵抗の相違を緩和することにより、異常ループの発生を低減することができる。
　異常ループについて図１Ａを参照して説明する。図１Ａに示すボンディングワイヤ１０は、ボール接合１２と、ウェッジ接合１４によって接合されており、異常ループとしてスネークループ１６が生じている。スネークループ１６は、ウェッジ接合１４に近い下降域において、複数回にわたってボンディングワイヤ１０に屈曲が生じた形状を有する。スネークループ１６は、ボール接合１２とウェッジ接合１４の高低差が大きくスパンが長い台形ループおいて発生頻度が高い。例えば、ボール接合１２とウェッジ接合１４の、高低差が500μm以上、距離（スパン）が3mm以上、下降域の長さ800μmの場合に発生頻度が高い。
　中間層は、Niの濃度が15～80mol％であることにより、芯材と被覆層の変形抵抗の相違をより確実に緩和することができる。中間層は、Niの濃度が80mol％超であると、ボール部内に気泡が発生する。
　気泡が生じたボール部は、電極上に接合すると、ワイヤ中心からずれてボール部が変形する偏芯変形、真円からずれる形状不良として楕円変形、花弁変形等が生じ、電極面から接合部のはみ出し、接合強度の低下、チップ損傷、生産管理上の不具合等の問題を起こす原因となる。こうした初期接合の不良は、後述する接合信頼性の低下を誘発する場合もある。
　中間層は、厚さが8～80nmであるのが好ましい。ボンディングワイヤは、中間層の厚さが8～80nmであることにより、芯材と被覆層の変形抵抗の相違をより確実に緩和することができる。中間層は、厚さが80nm超であると、ボンディングワイヤを低温で接続した場合に、接合界面での拡散速度が遅くなることにより、ウェッジ接合の強度が低下する。
　本実施形態の場合、被覆層と中間層の境界において、Niの濃度が15mol％以上であっても、Pdの濃度が50mol％以上である限り、本明細書では当該領域を被覆層とする。
　被覆層は、Pdの濃度が50～100mol％であることにより、ボンディングワイヤ表面の酸化を、より抑制することができる。因みにボンディングワイヤは、表面が酸化することにより、ウェッジ接合の強度が低下したり、樹脂封止されたときのワイヤ表面の腐食等が生じやすくなる。
　また、被覆層は、金属Mを含んでもよい。ボンディングワイヤは、被覆層が金属Mを含むことにより、ボール部とネック部の境界近傍で問題となる唇状のダメージを低減する効果が高められる。
　芯材は、金属MがCuの場合、P、Ti、B、Agから選ばれる１種以上の元素を含有してもよい。この場合、P、Ti、B、Agから選ばれる１種以上の元素は、ワイヤ全体に占める前記元素濃度が総計で0.0005～0.02mass％の範囲であることにより、圧着ボールの真円性を向上することができる。因みに近年の最密度実装では、狭ピッチ接続が要求される。そのためボール接合部の変形形状が重要であり、花弁状、偏芯等の異形を抑制し、真円性を向上する必要がある。
　また芯材は、金属MがCuの場合、Pd、Niから選ばれる１種以上の元素を含有してもよい。この場合、Pd、Niから選ばれる１種以上の元素は、ワイヤ全体に占める前記元素濃度が総計で0.2～2.0mass％の範囲であることにより、接合信頼性を向上することができる。
　因みに、接合信頼性は、自動車用半導体等のように高温で使用される用途の場合、ボンディングワイヤと電極の接合部において問題となる場合が多い。接合信頼性は、高温加熱試験等の加速試験により、上記接合部の強度の低下や、電気抵抗の上昇等を評価する。
　芯材は、金属MがAgの場合、Pd、Ni、Cuから選ばれる１種以上の元素を含有してもよい。この場合、Pd、Ni、Cuから選ばれる１種以上の元素は、ワイヤ全体に占める前記元素濃度が総計で0.5～5.0mass％の範囲であることにより、上記接合信頼性を向上することができる。
　さらに本実施形態に係るボンディングワイヤは、上記被覆層上に、AuとPdを含む合金からなる表面層を備えることとしてもよい。この場合、被覆層は、さらにAuを含む。また被覆層は、少量のNi、Cuを含有してもよい。
　表面層は、Auの濃度が10～70mol％、AuとPdの合計濃度が80mol％以上である。被覆層との境界において、Pdの濃度が50mol％以上であっても、Auの濃度が10mol％以上である限り、本明細書では表面層とする。
　AuとPdを含む合金からなる表面層は、ワイヤ表面の硫化及び酸化を抑制して摺動抵抗を低減することができる。したがってボンディングワイヤは、表面層を備えることにより、スネークループに加え図１Ｂに示すサギングループ１８の発生を低減することができる。サギングループ１８は、スネークループ１６同様、ボール接合１２とウェッジ接合１４の高低差が大きくスパンが長い台形ループにおいて発生頻度が高い。またサギングループ１８は、スネークループ１６に比べ、緩やかに蛇行した形状を有する。
　表面層は、Auの濃度が10～70mol％、AuとPdの合計濃度が80mol％以上であることにより、より確実に摺動抵抗を低減することができる。表面層は、Auの濃度が70mol％超であると、ボール部が楕円形となる不良が発生する。このような楕円形のボール部は、小さい電極にボール接合する高密度実装には不適となる。
　表面層、被覆層、及び中間層の総計厚さは、25～200nmであるのが好ましい。上記範囲であることにより、ボンディングワイヤは、ウェッジ接合部のめくれであるピーリング不良を抑制し、ウェッジ接合性を向上することができる。表面層、被覆層、及び中間層の総計厚さは、40～150nmであると、ウェッジ接合性をより確実に向上することができるので、より好ましい。
　表面層の厚さは、3～30nmであるのが好ましい。上記範囲であることにより、ボンディングワイヤは、スネークループ及びサギングループの発生を、より確実に低減することができる。
（製造方法）
　次に本実施形態に係るボンディングワイヤの製造方法を説明する。ボンディングワイヤの製造においては、芯材の表面に中間層、被覆層、場合によって表面層を形成する工程、所望の太さにする加工工程、熱処理工程が必要となる。
　中間層、被覆層、及び表面層を銅の芯材の表面に形成する方法には、メッキ法、蒸着法、溶融法等がある。メッキ法では、電解メッキ法、無電解メッキ法のどちらでも製造可能である。ストライクメッキ、フラッシュメッキと呼ばれる電解メッキ法では、メッキ速度が速く、下地との密着性も良好である。無電解メッキ法に使用する溶液は、置換型と還元型に分類され、膜が薄い場合には置換型メッキのみでも十分であるが、厚い膜を形成する場合には置換型メッキの後に還元型メッキを段階的に施すことが有効である。無電解メッキ法は装置等が簡便であり、容易であるが、電解メッキ法よりも時間を要する。
　蒸着法では、スパッタ、イオンプレーティング及び真空蒸着等の物理吸着と、プラズマＣＶＤ等の化学吸着を利用することができる。いずれも乾式であり、膜形成後の洗浄が不要であり、洗浄時の表面汚染等の心配がない。
　メッキ又は蒸着を施す段階について、狙いの線径で所望の膜を形成する手法と、太径の芯材に膜を形成してから、狙いの線径まで複数回伸線する手法とのどちらも有効である。前者の最終径での膜形成では、製造、品質管理等が簡便であり、後者の膜形成と伸線の組み合わせでは、膜と芯材との密着性を向上するのに有利である。それぞれの形成法の具体例として、狙いの線径の銅線に、電解メッキ溶液の中にワイヤを連続的に掃引しながら膜形成する手法、あるいは、電解又は無電解のメッキ浴中に太い銅線を浸漬して膜を形成した後に、ワイヤを伸線して最終径に到達する手法等が可能である。
　中間層、被覆層、表面層を形成した後の加工工程では、ロール圧延、スエージング、ダイス伸線などを目的により選択、使い分ける。加工速度、圧加率またはダイス減面率などにより、加工組織、転位、結晶粒界の欠陥などを制御することは、中間層、被覆層、表面層の構造、密着性などにも影響を及ぼす。
　熱処理工程では、芯材と中間層、中間層と被覆層、被覆層と表面層のそれぞれの界面で、各構成に含まれる金属元素の相互拡散を助長する。目的に応じて、熱処理を１回または複数回実施することが有効である。中間層、被覆層、表面層の構造で所望とする膜厚、組成を得るには、％オーダの濃度、nmオーダの膜厚などを、厳しい精度で制御する製造技術が求められる。熱処理工程は、膜形成直後の焼鈍、加工途中での焼鈍、最終径での仕上げ焼鈍に分類され、これらを選択、使い分けることが重要となる。
　単純にワイヤを加熱しただけでは、ボンディングワイヤの表面及び内部における各金属元素の分布を制御できる訳ではない。通常のワイヤ製造で用いられる最終線径での加工歪取り焼鈍をそのまま適用しても、芯材、中間層、被覆層、表面層の密着性の低下によりループ制御が不安定になったり、ワイヤ長手方向の各層の均質性、ワイヤ断面での各層の分布をコントロールすることは困難である。そこで、熱処理のタイミング、温度、速度、時間等の制御が重要である。
　加工と熱処理を組合せて拡散の進行度を制御することにより、所望とする膜厚、組成、構造を制御することが可能となる。熱処理する前の加工履歴は、芯材と中間層、中間層と被覆層、被覆層と表面層のそれぞれの界面での組織などに関係するため、熱処理での拡散挙動にも影響を及ぼす。どの加工段階で熱処理を行うかにより、最終の各層の組成、厚さなどが変化する。
　熱処理法として、ワイヤを連続的に掃引しながら熱処理を行い、しかも、一般的な熱処理である炉内温度を一定とするのでなく、炉内で温度傾斜をつけることで、本実施形態の特徴とする芯材、中間層、被覆層、表面層を有するボンディングワイヤを容易に量産することができる。具体的な事例では、局所的に温度傾斜を導入する方法、温度を炉内で変化させる方法等がある。ボンディングワイヤの表面酸化を抑制するには、N2やAr等の不活性ガスを炉内に流しながら加熱することも有効である。
　温度傾斜の方式では、炉入口近傍での正の温度傾斜(ワイヤの掃引方向に対し温度が上昇)、安定温度領域、炉出口近傍での負の温度傾斜(ワイヤの掃引方向に対し温度が下降)等、複数の領域で温度に傾斜をつけることが効果的である。これにより、炉入口近傍で各層と芯材の剥離等を生じることなく密着性を向上させ、安定温度領域で各金属元素の拡散を促進して所望の濃度勾配を形成し、さらに炉出口近傍で表面での銅の過剰な酸化を抑えることにより、得られたボンディングワイヤの接合性、ループ制御性等を改善することができる。こうした効果を得るには、出入口での温度勾配を10℃/cm以上設けることが望ましい。
　温度を変化させる方法では、炉内を複数の領域に分割して、各領域で異なる温度制御を行うことで温度の分布を作ることも有効である。例えば、3ヶ所以上に炉内を分割して、独立に温度制御を行い、炉の両端を中央部よりも低温とすることで、温度傾斜の場合と同様の改善効果が得られる。また、ボンディングワイヤの表面酸化を抑制するため、炉の出口側を銅の酸化速度の遅い低温にすることで、ウェッジ接合部の接合強度の上昇が得られる。
　また、溶融法では、各層又は芯材のいずれかを溶融させて鋳込む手法であり、1～50mm程度の太径で各層と芯材を接続した後に伸線することで生産性に優れていること、メッキ法、蒸着法に比べて各層の合金成分設計が容易であり、強度、接合性等の特性改善も容易であること等の利点がある。具体的な工程では、予め作製した芯材の周囲に、溶融した各層を構成する金属を順に鋳込んで各層を形成する方法と、予め作製した中間層、被覆層、表面層からなる中空円柱を用い、その中空部に例えば溶融した銅又は銅合金を鋳込むことで芯材を形成する方法に分けられる。好ましくは、後者の中空円柱の内部に銅の芯材を鋳込む方が、中間層及び被覆層中に銅の濃度勾配等を容易に安定形成することができる。また、溶融法では、中間層及び被覆層に銅を拡散させるための熱処理作業を省略することも可能であるが、中間層及び被覆層内の銅の分布を調整するために熱処理を施すことで更なる特性改善も見込める。
　さらに、こうした溶融金属を利用する場合、芯材と各層の少なくとも一方を連続鋳造で製造することも可能である。この連続鋳造法により、上記の鋳込む方法と比して、工程が簡略化され、しかも線径を細くして生産性を向上させることも可能となる。
　また、金属Mを含まない被覆層を形成する製法としては、被覆層内での金属Mの体拡散、粒界拡散などを抑えるため、熱処理温度が低いことが望ましい。具体的には、熱処理を２回以上に分けて行い、加工途中での太線の中間熱処理は高温として、最終線径の最終熱処理は低温化することにより、金属Mを含まない被覆層を形成することが有効である。例えば、２種の熱処理を実施する線径の差は2倍以上、温度差は100℃以上であることが望ましい。
　本実施形態に係るボンディングワイヤの接続において、ボール部形成時に用いるシールドガスは、標準的な5vol％H2+N2ガスのほか、純N2ガスを用いることもできる。アーク放電を生じさせワイヤ先端にボール部を形成する際に、シールドガスを吹き付けることにより、アーク放電を安定化し、溶融されたボール部表面の酸化を抑制することができる。
２．実施例
　実施例について、試料、評価内容、評価結果の順に説明する。
（試料）
　ボンディングワイヤの原材料として、芯材に用いるCu、Agは純度が約99.99mass%以上の高純度の素材を用い、被覆層のPd、中間層のNi、表面層のAuには純度99.9mass%以上のメッキ液を用意した。芯材を溶解する工程で、合金元素を適量添加した。
　直径が約1～3mmの太径のワイヤを準備し、そのワイヤ表面に中間層、被覆層、表面層などを電解メッキ法により形成した。電解メッキ液は、電子部品や半導体向けに市販されているメッキ液を使用した。
　芯材、中間層、被覆層からなるボンディングワイヤの場合、Niメッキ処理による中間層の形成後、Pdメッキ処理による被覆層の形成の順番で２段階処理を施した。また、芯材、中間層、被覆層、表面層からなるボンディングワイヤの場合、Niメッキ処理による中間層の形成、Pdメッキ処理による被覆層の形成、Auメッキ処理による表面層の形成の順番で３段階処理を実施した。密着性を向上するため必要に応じて、最後のメッキ処理を施した後に、加熱処理を施した。加熱条件は、窒素雰囲気で150～300℃の低温で30分間のバッチ加熱とした。また必要に応じて、中間層を形成した後に加熱処理を施した。その加熱条件は上記範囲とした。
　中間層、被覆層、表面層などを形成した後に、伸線により最終線径の18～20μmまで細く加工した。伸線速度は10～100m/minの範囲とし、伸線ダイスは個々の減面率が3～15%のダイスを使用した。
　最終径まで伸線した後に、加工歪みを取り除き伸び値を5～20%の範囲になるよう仕上げ焼鈍を実施した。必要に応じて、線径30～100μmまでダイス伸線した後に、中間焼鈍を施し、さらに伸線加工を施した。
　ワイヤの仕上げ焼鈍または中間焼鈍では、ワイヤを連続的に掃引しながら連続的に加熱する連続焼鈍を利用した。温度は300～700℃の範囲に設定し、ワイヤ掃引速度は10～100mm/minの範囲で調整した。温度分布と合わせて、ワイヤ掃引速度等も適正化した。焼鈍の雰囲気には、酸化を抑制する目的で窒素ガスを使用した。ガス流量は、0.0002～0.004m3/minの範囲で調整した。伸線加工途中での中間焼鈍、最終径での仕上げ焼鈍を適宜組み合わせた。中間焼鈍は伸線加工の途中である線径0.1～1mmで、ワイヤを焼鈍した。
　ボンディングワイヤの接続には、市販の自動ワイヤボンダー(Ｋ＆Ｓ社製)を使用して、ボール/ウェッジ接合を行った。アーク放電によりワイヤ先端にボール部を作製し、当該ボール部をシリコン基板上の電極膜に接合し、ワイヤ他端をリード端子上にウェッジ接合した。ボール溶融時の酸化を抑制するために、ワイヤ先端に5vol％H2+N2ガスを吹き付けた。接合温度は、通常の175℃と、低温の150℃とした。接合相手としてのシリコン基板上の電極はアルミ電極(Al-0.5％Cu膜)を使用し、その厚さは0.8μmとした。一方、ウェッジ接合の相手は、リードフレーム上のAu／Pd電極を使用した。
　ワイヤ表面の膜厚測定にはAESによる深さ分析を用いた。Arイオンでスパッタしながら深さ方向に測定して、深さの単位はSiO2換算で表示した。ボンディングワイヤ中の合金元素の濃度は、AESまたは誘導結合プラズマ（ICP：Inductively Coupled Plasma）分析を利用した。芯材に含有する元素がワイヤ表面に形成した中間層、被覆層、表面層の元素と重複する場合には、芯材に含有する元素の濃度は、芯材断面における電子線マイクロアナライザ（EPMA：Electron Probe MicroAnalyser ）、エネルギー分散型X線分析(EDX：Energy dispersive X-ray spectrometry)、AESを用いた分析手法により求めた濃度の平均値を用いた。これに該当する元素はPd、Ni、Au元素である。他方、芯材に含有する元素がPd、Ni、Au以外の元素であり、中間層、被覆層、表面層の元素とは異なる場合には、ワイヤ全体のICP分析により測定した濃度を利用した。
（評価内容）
　接合部の高温信頼性について、ボンディング後に樹脂封止された試料を、処理温度185℃、処理時間2000時間の条件で加熱処理した後に、60本のボンディングワイヤの電気特性を評価した。電気抵抗が初期の3倍以上に上昇したボンディングワイヤの割合が30%以上の場合には接合不良のため×印、電気抵抗が3倍以上に上昇したボンディングワイヤの割合が5%以上30%未満の範囲の場合には信頼性要求が厳しくないICには使用可能なため△印、電気抵抗が3倍以上に上昇したボンディングワイヤの割合が5%未満で且つ1.5倍以上に上昇したボンディングワイヤの割合が10%以上30%未満の場合には実用上は問題ないため○印、電気抵抗が1.5倍以上に上昇したボンディングワイヤの割合が10%未満であれば良好であるため◎印で、表１，２中の「高温信頼性」の欄に表示した。
　スネークループ不良の評価について、ミドルスパン高段差およびロングスパン高段差の２種類のループで評価した。ミドルスパン高段差では、ワイヤ長さは3.5mmで下降域の長さは0.5mm、ウェッジ接合部からループ最高位置までの高低差が0.7mmとなるように台形ループを接続した。ロングスパン高段差では、ワイヤ長さは5mmで下降域の長さは0.7mm、ウェッジ接合部からループ最高位置までの高低差が0.8mmとなるように台形ループを接続した。線径は20μmである。上方からループの下降域を光学顕微鏡で観察して、1本のループの下降域における屈曲が2回以上であればスネークループ不良と判定して、500本のループ接続における発生頻度を評価した。この発生頻度が10%超の場合は不良と判定して×印で表示し、5％超10％以下の場合は量産性が気になるため△印、2％超5％以下の場合は比較的良好であるため○印、0～2％以下の場合はループ形状が安定していると判断し、◎印で、表１，２中の「スネークループ」の欄に表示した。
　サギングループ不良の評価について、ワイヤ長さは5mmで下降域長さは1.5mm、ウェッジ接合部からループ最高位置までの高低差が0.7mmとなるように台形ループを接続した。線径は20μmである。光学顕微鏡で上方からループを観察して、0.2mm以上の長周期でループが蛇行している場合、サギングループ不良と判断して、400本のループ接続における発生頻度を評価した。この発生頻度が10%超の場合は不良と判定して×印で表示し、5％超10％以下の場合は量産性が気になるため△印、2％超5％以下の場合は比較的良好であるため○印、0～2％以下の場合はサギングループ不良が問題にならないと判断し、◎印で、表２中の「サギングループ」の欄に表示した。
　ウェッジ接合性は、リード電極にボンディングワイヤを接合したときのめくれ不良の発生頻度で評価した。ボンディングワイヤの製造後の保管は、スプールケースに入れた状態でクリーンルーム内の大気中に30日間だけ常温で保管した。接合条件において、超音波出力を少し減らし、さらにステージ温度を160℃の低温とし、ウェッジ接合の不着を誘発した。1000本のボンディングにより不着発生頻度を評価した。めくれ不良数が10本以上の場合は改善が必要であるため×印、4～9本の場合には△印、1～3本の場合にはほぼ良好であるため○印、不良がゼロの場合にはウェッジ接合性が優れていると判断して◎印で、表１，２中の「ウェッジ接合性」の欄に表示した。
　圧着ボール部の接合形状の判定では、接合されたボール部を200本観察して、形状の真円性、異常変形不良、寸法精度等を評価した。ワイヤ径は20μmを使用し、初期ボール径/ワイヤ径の比率を約２として厳しい小ボール接合で評価した。
　真円からずれた異方性や花弁状等の不良ボール形状が5本以上であれば不良と判定し×印、真円からずれた不良ボール形状が2～4本ある場合は二つに分類して、異常変形が1本以上発生していれば量産での改善が望ましいから△印、異常変形が発生していなければ使用可能であることから○印、不良ボール形状が1本以下であれば良好であるため◎印で、表１，２中の「圧着ボール形状」の欄に表示した。
（評価結果）
　実施例1～18のボンディングワイヤは、芯材、中間層、被覆層からなり、中間層のNiの濃度が15～80mol％であることにより、スネークループ不良が低減できることが確認された。一方、中間層を含まない比較例1、2、5、又は中間層のNiの濃度が上記範囲外である比較例3、4、6は、スネークループ不良が高頻度で発生した。
　実施例2～5、7～18は、中間層の厚さが8～80nmであることにより、ウェッジ接合におけるめくれ不良を低減できることが確認された。
　実施例19～35のボンディングワイヤは、芯材、中間層、被覆層、表面層からなり、中間層のNiの濃度が15～80mol％であり、さらに表面層のAuの濃度が10～70mol％、AuとPdの合計濃度が80mol％以上であることにより、スネークループ不良及びサギングループ不良が低減できることが確認された。一方、中間層を含まない比較例7、9、又は中間層のNiの濃度が上記範囲外である比較例8、10は、スネークループ不良及びサギングループ不良が高頻度で発生した。また表面層のAuの濃度が上記範囲外である比較例11は、スネークループ不良を低減できるものの、サギングループ不良が発生した。
　実施例19～21、24～35のボンディングワイヤは、表面層、被覆層、及び中間層の総計厚さが25～200nmであることにより、ウェッジ接合におけるめくれ不良を低減できることが確認された。さらに実施例19～21、24～29、31～35のボンディングワイヤは、表面層、被覆層、及び中間層の総計厚さが40～150nmであることにより、ウェッジ接合におけるめくれ不良をより確実に低減できることが確認された。
　実施例19～22、25～35のボンディングワイヤは、表面層の厚さが3～30nmであることによりスネークループ不良及びサギングループ不良の発生をより確実に低減できることが確認された。
　実施例3、4、6～9、20、21、23～26のボンディングワイヤの場合、芯材は、前記金属MがCuであり、P、Ti、B、Agから選ばれる１種以上の元素を含有し、ワイヤ全体に占める前記元素濃度が総計で0.0005～0.02mass％の範囲であることにより、圧着ボール形状が良好であることが確認された。
　実施例10～12、27～29のボンディングワイヤの場合、芯材は、前記金属MがCuであり、Pd、Niから選ばれる１種以上の元素を含有し、ワイヤ全体に占める前記元素濃度が総計で0.2～2.0mass％の範囲であることにより、加熱処理後の信頼性（高温信頼性）が高いことが確認された。
　実施例15～18、32～35のボンディングワイヤの場合、芯材は、前記金属MがAgであり、Pd、Ni、Cuから選ばれる１種以上の元素を含有し、ワイヤ全体に占める前記元素濃度が総計で0.5～5.0mass％の範囲であることにより、加熱処理後の信頼性が高いことが確認された。
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000002

Claims (9)

  1. 金属Mを50mol％超含む芯材と、
    前記芯材の表面に形成され、Ni、Pd、前記金属M及び不可避不純物からなり、前記Niの濃度が15～80mol％である中間層と、
    前記中間層上に形成され、Ni、Pd及び不可避不純物からなり、前記Pdの濃度が50～100mol％である被覆層と
    を備え、
    前記金属MがCu又はAgであり、
    前記被覆層のNi濃度が前記中間層のNi濃度よりも低い
    ことを特徴とする半導体装置用ボンディングワイヤ。
  2. 前記中間層の厚さが8～80nmであることを特徴とする請求項１記載の半導体装置用ボンディングワイヤ。
  3. 前記被覆層がさらにAuを含み、
    前記被覆層上に形成され、AuとPdを含む合金からなり、前記Auの濃度が10～70mol％、AuとPdの合計濃度が80mol％以上である表面層を備え、
    前記被覆層のAu濃度は、前記表面層のAu濃度よりも低い
    ことを特徴とする請求項１記載の半導体装置用ボンディングワイヤ。
  4. 前記表面層、前記被覆層、及び前記中間層の総計厚さが25～200nmであることを特徴とする請求項３記載の半導体装置用ボンディングワイヤ。
  5. 前記表面層の厚さが3～30nmであることを特徴とする請求項３又は４記載の半導体装置用ボンディングワイヤ。
  6. 前記金属MがCuであり、前記芯材は、P、Ti、B、Agから選ばれる１種以上の元素を含有し、ワイヤ全体に占める前記元素濃度が総計で0.0005～0.02mass％の範囲であることを特徴とする請求項１～５のいずれか１項記載の半導体装置用ボンディングワイヤ。
  7. 前記金属MがCuであり、前記芯材は、Pd、Niから選ばれる１種以上の元素を含有し、ワイヤ全体に占める前記元素濃度が総計で0.2～2.0mass％の範囲であることを特徴とする請求項１～５のいずれか１項記載の半導体装置用ボンディングワイヤ。
  8. 前記金属MがAgであり、前記芯材は、Pd、Ni、Cuから選ばれる１種以上の元素を含有し、ワイヤ全体に占める前記元素濃度が総計で0.5～5.0mass％の範囲であることを特徴とする請求項１～５のいずれか１項記載の半導体装置用ボンディングワイヤ。
  9. 前記被覆層がさらに前記芯材と同じ前記金属Mを含むことを特徴とする請求項１～８のいずれか１項記載の半導体装置用ボンディングワイヤ。
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Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3136435B1 (en) * 2015-07-23 2022-08-31 Nippon Micrometal Corporation Bonding wire for semiconductor device
JP6369994B2 (ja) * 2015-09-02 2018-08-08 田中電子工業株式会社 ボールボンディング用銅合金細線
JP6047214B1 (ja) * 2015-11-02 2016-12-21 田中電子工業株式会社 ボールボンディング用貴金属被覆銅ワイヤ
SG10201509634UA (en) * 2015-11-23 2017-06-29 Heraeus Oriental Hitec Co Ltd Coated wire
TW202143414A (zh) 2015-12-15 2021-11-16 日商日鐵化學材料股份有限公司 半導體裝置用接合線
SG10201607523RA (en) * 2016-09-09 2018-04-27 Heraeus Materials Singapore Pte Ltd Coated wire
TWI599664B (zh) * 2016-09-13 2017-09-21 樂金股份有限公司 用於功率模組封裝之金屬帶材
KR101812943B1 (ko) * 2016-10-20 2017-12-28 엠케이전자 주식회사 본딩 와이어
DE102016224631B4 (de) * 2016-12-09 2020-06-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektrisch leitende Verbindung zwischen mindestens zwei elektrischen Komponenten an einem mit elektronischen und/oder elektrischen Bauelementen bestücktem Träger, die mit einem Bonddraht ausgebildet ist
US10622531B2 (en) * 2017-09-28 2020-04-14 Nichia Corporation Light-emitting device
CN111326491B (zh) * 2020-02-13 2022-11-25 河南理工大学 一种镀金键合铝线及其制备方法
DE102020001486A1 (de) 2020-03-07 2021-09-09 Martin Geßlein Ersatz von Golddraht zum Bonden durch vernickelten undversilberten Kupferdraht
CN112687649B (zh) * 2020-12-25 2024-03-12 中国科学院宁波材料技术与工程研究所 键合线表面的耐腐蚀抗氧化涂层及其制备方法与应用
KR20240026927A (ko) * 2021-06-25 2024-02-29 닛데쓰마이크로메탈가부시키가이샤 반도체 장치용 본딩 와이어
JP7157279B1 (ja) * 2021-06-25 2022-10-19 日鉄マイクロメタル株式会社 半導体装置用ボンディングワイヤ
KR20240026929A (ko) * 2021-06-25 2024-02-29 닛데쓰마이크로메탈가부시키가이샤 반도체 장치용 본딩 와이어
JPWO2022270077A1 (ja) * 2021-06-25 2022-12-29
CN115836384B (zh) * 2021-06-25 2024-06-11 日铁新材料股份有限公司 半导体装置用接合线
WO2022270050A1 (ja) * 2021-06-25 2022-12-29 日鉄マイクロメタル株式会社 半導体装置用ボンディングワイヤ
EP4365931A1 (en) * 2022-06-24 2024-05-08 NIPPON STEEL Chemical & Material Co., Ltd. Bonding wire for semiconductor device
WO2023248491A1 (ja) * 2022-06-24 2023-12-28 日鉄ケミカル＆マテリアル株式会社 半導体装置用ボンディングワイヤ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002023618A1 (fr) * 2000-09-18 2002-03-21 Nippon Steel Corporation Fil de connexion de semi-conducteur et son procede de fabrication
JP2013232693A (ja) * 2013-08-20 2013-11-14 Nippon Steel Sumikin Materials Co Ltd 半導体装置用ボンディングワイヤ

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727579B1 (en) * 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
EP0722198A3 (en) * 1995-01-10 1996-10-23 Texas Instruments Inc Bond wire with integrated contact area
US6150186A (en) * 1995-05-26 2000-11-21 Formfactor, Inc. Method of making a product with improved material properties by moderate heat-treatment of a metal incorporating a dilute additive
JP3481392B2 (ja) * 1996-06-13 2003-12-22 古河電気工業株式会社 電子部品リード部材及びその製造方法
US6778404B1 (en) * 2000-06-02 2004-08-17 Micron Technology Inc Stackable ball grid array
US20040245320A1 (en) * 2001-10-23 2004-12-09 Mesato Fukagaya Bonding wire
TWI287282B (en) * 2002-03-14 2007-09-21 Fairchild Kr Semiconductor Ltd Semiconductor package having oxidation-free copper wire
KR100702662B1 (ko) * 2005-02-18 2007-04-02 엠케이전자 주식회사 반도체 패키징용 구리 본딩 와이어
SG10201401960RA (en) 2007-07-24 2014-06-27 Nippon Steel & Sumikin Mat Co Semiconductor device bonding wire
US8389860B2 (en) * 2007-12-03 2013-03-05 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor devices
JP4886899B2 (ja) * 2009-03-17 2012-02-29 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤ
US8101123B2 (en) * 2009-03-23 2012-01-24 Lee Jun-Der Composite alloy bonding wire and manufacturing method thereof
KR101323246B1 (ko) * 2011-11-21 2013-10-30 헤레우스 머티어리얼즈 테크놀로지 게엠베하 운트 코 카게 반도체 소자용 본딩 와이어, 그 제조방법, 반도체 소자용 본딩 와이어를 포함하는 발광다이오드 패키지
US20130164169A1 (en) * 2011-12-21 2013-06-27 Jun-Der LEE Composite alloy bonding wire
US8940403B2 (en) * 2012-01-02 2015-01-27 Wire Technology Co., Ltd. Alloy wire and methods for manufacturing the same
TW201336598A (zh) * 2012-03-12 2013-09-16 Wire technology co ltd 銀-金-鈀合金表面鍍金屬薄膜之複合線材及其製法
TWI486970B (zh) * 2013-01-29 2015-06-01 Tung Han Chuang 銅基合金線材及其製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002023618A1 (fr) * 2000-09-18 2002-03-21 Nippon Steel Corporation Fil de connexion de semi-conducteur et son procede de fabrication
JP2013232693A (ja) * 2013-08-20 2013-11-14 Nippon Steel Sumikin Materials Co Ltd 半導体装置用ボンディングワイヤ

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