SG191711A1 - Pd-coated copper ball bonding wire - Google Patents

Pd-coated copper ball bonding wire Download PDF

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Publication number
SG191711A1
SG191711A1 SG2013032347A SG2013032347A SG191711A1 SG 191711 A1 SG191711 A1 SG 191711A1 SG 2013032347 A SG2013032347 A SG 2013032347A SG 2013032347 A SG2013032347 A SG 2013032347A SG 191711 A1 SG191711 A1 SG 191711A1
Authority
SG
Singapore
Prior art keywords
palladium
copper
gold
wire
ball bonding
Prior art date
Application number
SG2013032347A
Other languages
English (en)
Inventor
Mitsuo Takada
Tsutomu Yamashita
Hiroyuki SHIGYOU
Takashi Kuwahara
Junichi Okazaki
Shigeru Saitou
Original Assignee
Tanaka Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Electronics Ind filed Critical Tanaka Electronics Ind
Publication of SG191711A1 publication Critical patent/SG191711A1/en

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  • Wire Bonding (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
SG2013032347A 2011-12-21 2012-12-12 Pd-coated copper ball bonding wire SG191711A1 (en)

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JP2011280584A JP5088981B1 (ja) 2011-12-21 2011-12-21 Ｐｄ被覆銅ボールボンディングワイヤ
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WO2016093769A1 (en) * 2014-12-11 2016-06-16 Heraeus Materials Singapore Pte., Ltd. Coated copper (cu) wire for bonding applications
US9773748B2 (en) 2015-07-23 2017-09-26 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10384314B2 (en) 2015-04-22 2019-08-20 Hitachi Metals, Ltd. Metal particle and method for producing the same, covered metal particle, and metal powder
US10414002B2 (en) 2015-06-15 2019-09-17 Nippon Micrometal Corporation Bonding wire for semiconductor device
US11749634B2 (en) 2020-01-07 2023-09-05 Kioxia Corporation Semiconductor device and wire bonding method

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Publication number Priority date Publication date Assignee Title
JP5576004B1 (ja) * 2014-01-30 2014-08-20 千住金属工業株式会社 ＯＳＰ処理Ｃｕボール、はんだ継手、フォームはんだ、およびはんだペースト
WO2015141485A1 (ja) * 2014-03-17 2015-09-24 日立金属株式会社 触媒用Ｐｄ粒子および触媒用Ｐｄ粉体、触媒用Ｐｄ粒子の製造方法
KR101728650B1 (ko) * 2015-02-26 2017-04-19 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 반도체 장치용 본딩 와이어
WO2016189752A1 (ja) * 2015-05-26 2016-12-01 日鉄住金マイクロメタル株式会社 半導体装置用ボンディングワイヤ
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DE112015004682B4 (de) * 2015-08-12 2020-07-30 Nippon Micrometal Corporation Bonddraht für Halbleitervorrichtung
CN105132735A (zh) * 2015-08-22 2015-12-09 汕头市骏码凯撒有限公司 一种微电子封装用超细铜合金键合丝及其制备方法
JP6002299B1 (ja) * 2015-08-28 2016-10-05 田中電子工業株式会社 ボールボンディング用金（Ａｕ）分散銅ワイヤ
JP6002300B1 (ja) * 2015-09-02 2016-10-05 田中電子工業株式会社 ボールボンディング用パラジウム（Ｐｄ）被覆銅ワイヤ
JP6047214B1 (ja) * 2015-11-02 2016-12-21 田中電子工業株式会社 ボールボンディング用貴金属被覆銅ワイヤ
SG10201600329SA (en) * 2016-01-15 2017-08-30 Heraeus Materials Singapore Pte Ltd Coated wire
US9799624B1 (en) * 2016-08-17 2017-10-24 Nanya Technology Corporation Wire bonding method and wire bonding structure
JP6572998B1 (ja) * 2018-06-12 2019-09-11 千住金属工業株式会社 Ｃｕ核ボール、はんだ継手、はんだペースト及びフォームはんだ
CN109402445B (zh) * 2018-11-09 2021-01-15 上海理工大学 一种抗氧化铜基合金键合引线及其制备方法
JP7157279B1 (ja) * 2021-06-25 2022-10-19 日鉄マイクロメタル株式会社 半導体装置用ボンディングワイヤ
CN115178599A (zh) * 2022-07-12 2022-10-14 广东省科学院佛山产业技术研究院有限公司 铝钯双金属丝及其制备方法、应用
JP7494400B1 (ja) 2023-05-30 2024-06-03 日鉄マイクロメタル株式会社 ボンディングワイヤ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200414453A (en) * 2002-03-26 2004-08-01 Sumitomo Electric Wintec Inc Bonding wire and IC device using the bonding wire
SG195543A1 (en) * 2008-10-10 2013-12-30 Sumitomo Bakelite Co Semiconductor device
CN101834143A (zh) * 2009-03-10 2010-09-15 深圳市矽格半导体科技有限公司 一种用钯铜线制造集成电路内引线的方法
JP4349641B1 (ja) * 2009-03-23 2009-10-21 田中電子工業株式会社 ボールボンディング用被覆銅ワイヤ
JP4637256B1 (ja) * 2009-09-30 2011-02-23 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤー
SG178063A1 (en) * 2009-07-30 2012-03-29 Nippon Steel Materials Co Ltd Bonding wire for semiconductor
JP4919364B2 (ja) * 2010-08-11 2012-04-18 田中電子工業株式会社 ボールボンディング用金被覆銅ワイヤ

Cited By (8)

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Publication number Priority date Publication date Assignee Title
WO2016093769A1 (en) * 2014-12-11 2016-06-16 Heraeus Materials Singapore Pte., Ltd. Coated copper (cu) wire for bonding applications
US10384314B2 (en) 2015-04-22 2019-08-20 Hitachi Metals, Ltd. Metal particle and method for producing the same, covered metal particle, and metal powder
US10414002B2 (en) 2015-06-15 2019-09-17 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10610976B2 (en) 2015-06-15 2020-04-07 Nippon Micrometal Corporation Bonding wire for semiconductor device
US10737356B2 (en) 2015-06-15 2020-08-11 Nippon Micrometal Corporation Bonding wire for semiconductor device
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US11749634B2 (en) 2020-01-07 2023-09-05 Kioxia Corporation Semiconductor device and wire bonding method

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