KR890003143B1 - 반도체 소자 결선용 금합금 세선 - Google Patents

반도체 소자 결선용 금합금 세선 Download PDF

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Publication number
KR890003143B1
KR890003143B1 KR8204586A KR820004586A KR890003143B1 KR 890003143 B1 KR890003143 B1 KR 890003143B1 KR 8204586 A KR8204586 A KR 8204586A KR 820004586 A KR820004586 A KR 820004586A KR 890003143 B1 KR890003143 B1 KR 890003143B1
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South Korea
Prior art keywords
bonding
wire
semiconductor device
gold alloy
alloy wire
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KR8204586A
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English (en)
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KR840002161A (ko
Inventor
나오유기 호소다
다모즈 모리
마사유기 다나가
Original Assignee
이나이 요시히로
미쯔비시긴조구 가부시기가이샤
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Priority claimed from JP56195299A external-priority patent/JPS5896741A/ja
Priority claimed from JP57037580A external-priority patent/JPS58154242A/ja
Application filed by 이나이 요시히로, 미쯔비시긴조구 가부시기가이샤 filed Critical 이나이 요시히로
Publication of KR840002161A publication Critical patent/KR840002161A/ko
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Publication of KR890003143B1 publication Critical patent/KR890003143B1/ko

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Abstract

내용 없음.

Description

반도체 소자 결선용 금합금 세선
본 발명은 상온 및 고온에서 높은 인장강도를 가지며, 특히 반도체장치의 제조에 있어서 반도체소자와 리드후레임의 결선에 사용하는 경우 강한 접합강도를 가지며, 변형루우프의 발생이 없는 금합금세선에 관한 것이다.
종래 일반적으로 IC 또는 LSI등의 반도체장치는, a. 우선 리드소재로서 판두께 0.1-0.3MM를 가지는 동 및 동합금 또는 Ni합금제선을 준비하고, b. 다음으로 상기 리드소재로부터 프레스 타발가공에 의하여 제조하고자 하는 반도체장치의 형상에 적합한 리드후레임을 형성하여, c. 상기 리드후레임의 소정부위에 고순도 Si 또는 Ge등의 반도체소자를 Ag페이스트등의 도전성수지를 사용하여 가열 접착하거나 또는 미리 상기 리드소재의 편면에 도금하여든 Au, Ag, Ni 또는 이들의 합금의 도금층을 개재시켜 가열 압착하거나 하여, d. 상기 반도체소자와 상기 리드후레임과를 금선으로 결선(Bonding)하고, e. 다음으로 상기 반도체소자, 결손 및 반도체소자가 접착된 부분의 리드후레임을 보호할 목적으로 프라스틱으로 보호하고, f. 상기 리드후레임에서의 상호 이어진 부분을 절제하여 리드재로하여, g. 최종적으로 상기 리드재의 각부에 반도체 장치의 기판과의 접속을 가능케 하기 위하여 납땜재료를 피복 용착한다. 이상 a-g의 주용공정에 의하여 제조되고 있는 것이다. 다시 상기 반도체 장치의 제조공정에 있어서의 d공정에 대하여 상술하면, 반도체소자와 리드후레임과의 금선에 의한 결선은 금선을 산소수소염 또는 전기적으로 용단하며, 이때 생기는 선단부의 금볼부를 늘려 150-300℃의 가열상태로 된 반도체소자와 리드후레임에 수동식 또는 자동식으로 본딩마신을 사용하여 열압착하므로서 이루어진다.
한편 근년의 본딩기술의 향상에 따라 고속도화, 집적도의 고밀화, 또한 경제성등에서 보아 이에 사용되는 금선에도 세선화 및 고강도화가 요구되고 있다. 그러나 현재 실용화되고 있는 금선(순금선)은 직경 0.05㎜ψ이하의 세선으로 한 경우 상온 및 고온 인장강도가 비교적 낮으므로 선인발 가공중 또는 본딩(결선)중에 단선되기 쉬우며 또한 본딩에 있어서는 연화온도가 낮으므로 금선용단시에 재결정에 의한 결정입의 조대화를 일으켜 금선재체가 취약하여질뿐 아니라 150-300℃의 온도로 열압착하기 때문에 본딩금선이 연화되어 이 결과 반도체소자와 리드후레임을 접속하는 결선금선의 루프형상의 변형으로 늘어져 소트의 원인으로 되고 또한 반도체소자 및 리드후레임에 대한 접합강도도 불충분하여 결선불량을 일으키는 등의 문제점이 발생하고 따라서 상기 용망사항을 만족할 수 없는 실정이다.
본 발명은 상기한 바와같은 결선용 순금선이 가지는 문제점을 해결하고 그리고 0.05㎚φ이하의 세선으로 한 경우에도 선인발 가공중 또는 결선중에 단선이 없고 상온 및 고온 인장강도가 높고 본딩시에 재결정에 의한 결정입의 조대화에 원닝된 취약화 및 변형루우프의 발생이 없는 높은 연화온도를 가지며, 본딩시의 접합강도가 높은 합금 금세선을 제공하는 것으로, 전기한 금합금 세선을 중량%로 La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Py, Ho, Er, Tm, Yb, Lu, Sc, 및 Y로 되는 휘토류원소군중 1종 또는 2종 이상을 0.0003-0.010%를 함유하고 나머지 Au와 불가피분순물로 되거나 또는 이들 휘토류금속La, Ce, Pr, Nd 및 Sm로 된 세리움휘토류 원소중 1종 또는 2종 이상을 0.003-0.010% 함유하고 다시 Ge, Be 및 Ca중 1종 또는 2종 이상을 0.0001-0.0060% 함유하고 나머지 Au와 불가피불순물을 조성으로 구성된 점에 특징을 가지는 것이다. 다음으로 본 발명의 합금금세선의 성분조성을 상기와 같이 한정한 이유를 설명한다.
(a) 세리움족 휘토류원소
이들 성분에는 세선의 상온 및 고온 인장강도를 향상시키는 균등작용이 있으나, 그 함유량이 0.0003% 미만에서는 소망의 높은 상온 및 고온 인장강도를 확보할 수 없으며, 한편 0.010%를 초과 함유하면 취약화되어 선인발 가공성등이 낮아지므로 그 함유량을 0.0003-0.010%로 정한다.
(b) Ge, Be, 및 Ca
이들 성분에는 세리움족 휘토류원소와의 공존에 있어서 세선의 연화온도를 높이고 따라서 본딩시의 세선자체의 취화 및 변형 루우프의 발생을 억제함과 동시에 본딩의 접합강도를 높이고 또한 상온 및 고온 인장강도를 일층 높이는 균등적 작용이 있으나 그 함량이 0.0001%미만에서는 전기한 작용에 소망효과를 얻을 수 없고 한편 0.0060%를 초과 함유시키면 취화하여 선인발 가공성을 저하할 뿐 아니라 본딩시의 가열온도에서 결정입계 파단을 일으키기 쉬우므로 그 함량을 0.0001-0.0060%로 정한다.
[실시예1]
통상 용해법에 의하여 각기 제1표에 표시된 성분조성을 가지는 Au합금용량을 조제하고, 주조한 후 공지의 흠형 압변기를 사용하여 압언하고 다음 선인발가공을 행하므로서 직경 0.025㎜φ를 가지는 본 발명 금합금세선 제1표(1-56)과 제2표의 (1-64)합계 120를 각기 제조하였으며, 이들중 제2표의 것은 Ge, Be, 및 Ca를 함유하는 것이다.
다음으로 이결과 얻은 본 발명 합금세선에 대하여 상온 인장시험 및 반도체 소자의 본딩시에 노출되는 조건에 상당한 온도 250℃ 유지시간 30초의 조건으로 고온인장시험을 행하고 그 시험결과를 제1표 및 제2표에 도시한다. 또 상기 제2표의 본 발명 금합금 세선 1-64를 사용하여 본딩기계로서 반도체소자와 리드후리임과의 본딩을 행하고 본딩후의 접합 강도를 측정함과 동시에 변형루우프의 발생유무를 관찰하였다. 이결과도 제2표에 표시하고 또한 제1, 2표에는 비교의 목적으로 같은 굵기의 순금선의 동일조건에서의 시험결과로 표시하였다. 제1 및 제2표에 표시된 결과로부터 본 발명 금합금세선은 모두 순금선에 비하여 일층 높은 상온 및 고온 인장강도를 표시하며, 또한 제2표의 본 발명 금합금세선은 1-64에서 보는 바 본딩후의 접합강도가 현저하게 높고 루프변형도 발생이 전혀 없음을 알수 잇다. 상술한 바와같이 본 발명의 금합금세선은 대단히 높은 상온 및 고온 인장강도를 가지고 있어 직경 0.05㎜ψ이하의 세선으로 인발가공중 또는 본딩(결선)중에 절단됨이 없고 또 높은 연화 온도를 가지고 있으므로 본딩시의 결정입 조대화에 원인하는 취약화나 변형루프의 발생이 없고 또한 본딩시 견고한 접합강도를 확보할 수 있는 등 공업상 유용한 특성을 가지며 또한 본딩의 고속화 및 직접도의 고밀화를 가능케 하는 것이다.
[1표의 1]
Figure kpo00001
[1표의 2]
Figure kpo00002
Figure kpo00003
[2 표]
Figure kpo00004
Figure kpo00005

Claims (2)

  1. La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Py, Ho, Er, Tm, Yb, Lu, Sc, 및 Y로 되는 휘토류원소군중 1종 또는 2종 이상을 0.0003-0.010중량% 함유하고 나머지 Au와 불가피순물로 된 조성을 가짐을 특징으로 한 반도체 소자 결선용 고장력 Au 합금세선.
  2. La, Ce, Pr, Nd 및 Sm로되는 세륨족 휘토류원소중의 1종 또는 2종 이상을 0.0003-0.01% 함유하고 다시 Ge, Be 및 Ca 중의 1종 또는 2종 이상 0.0001-0.0060중량%를 함유하고 나머지 Au와 불가피불순물로 된 조성을 가짐을 특징으로 한 반도체 결선용 고장력 Au합금세선.
KR8204586A 1981-12-04 1982-10-12 반도체 소자 결선용 금합금 세선 KR890003143B1 (ko)

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JP56195299A JPS5896741A (ja) 1981-12-04 1981-12-04 半導体素子結線用高張力ａｕ合金細線
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JP81-195299 1981-12-04
JP57037580A JPS58154242A (ja) 1982-03-10 1982-03-10 半導体素子ボンデイング用金合金細線
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