HK17888A - Fine gold alloy wire for bonding of a semiconductor device - Google Patents

Fine gold alloy wire for bonding of a semiconductor device

Info

Publication number
HK17888A
HK17888A HK178/88A HK17888A HK17888A HK 17888 A HK17888 A HK 17888A HK 178/88 A HK178/88 A HK 178/88A HK 17888 A HK17888 A HK 17888A HK 17888 A HK17888 A HK 17888A
Authority
HK
Hong Kong
Prior art keywords
gold alloy
alloy wire
bonding
fine gold
semiconductor device
Prior art date
Application number
HK178/88A
Other languages
English (en)
Inventor
Naoyuki Hosoda
Masayuki Tanaka
Tamotsu Mori
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56195299A external-priority patent/JPS5896741A/ja
Priority claimed from JP57037580A external-priority patent/JPS58154242A/ja
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Publication of HK17888A publication Critical patent/HK17888A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/43Manufacturing methods
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
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    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/4321Pulling
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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HK178/88A 1981-12-04 1988-03-03 Fine gold alloy wire for bonding of a semiconductor device HK17888A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56195299A JPS5896741A (ja) 1981-12-04 1981-12-04 半導体素子結線用高張力au合金細線
JP57037580A JPS58154242A (ja) 1982-03-10 1982-03-10 半導体素子ボンデイング用金合金細線

Publications (1)

Publication Number Publication Date
HK17888A true HK17888A (en) 1988-03-11

Family

ID=26376707

Family Applications (1)

Application Number Title Priority Date Filing Date
HK178/88A HK17888A (en) 1981-12-04 1988-03-03 Fine gold alloy wire for bonding of a semiconductor device

Country Status (10)

Country Link
US (2) US4885135A (ko)
KR (1) KR890003143B1 (ko)
DE (1) DE3237385A1 (ko)
FR (1) FR2517885B1 (ko)
GB (1) GB2116208B (ko)
HK (1) HK17888A (ko)
IT (1) IT1156088B (ko)
MY (1) MY8700920A (ko)
NL (1) NL8203706A (ko)
SG (1) SG93487G (ko)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4775512A (en) * 1985-10-01 1988-10-04 Tanaka Denshi Kogyo Kabushiki Kaisha Gold line for bonding semiconductor element
JPS62278241A (ja) * 1986-05-26 1987-12-03 Shoei Kagaku Kogyo Kk ボンデイングワイヤ
US5491034A (en) * 1988-05-02 1996-02-13 Nippon Steel Corporation Bonding wire for semiconductor element
DE69009814T2 (de) * 1989-03-24 1994-11-17 Mitsubishi Materials Corp Silberlegierungsblatt zur Verbindung von Sonnenzellen.
GB2231336B (en) * 1989-04-28 1993-09-22 Tanaka Electronics Ind Gold wire for the bonding of a semiconductor device
US5336434A (en) * 1989-10-02 1994-08-09 Allergan, Inc. Methods, compositions and apparatus to disinfect lenses
JPH0647699B2 (ja) * 1991-01-29 1994-06-22 三菱マテリアル株式会社 半導体素子ボンディング用金合金細線
US5518691A (en) * 1993-07-29 1996-05-21 Tanaka Kikinzoku Kogyo K.K. Precious metal material
DE69618944T2 (de) * 1995-04-07 2002-10-31 Kazuo Ogasa Verfahren zur Herstellung einer hochreinen Goldlegierung
JP3337049B2 (ja) * 1995-05-17 2002-10-21 田中電子工業株式会社 ボンディング用金線
US5966592A (en) * 1995-11-21 1999-10-12 Tessera, Inc. Structure and method for making a compliant lead for a microelectronic device
JP3328135B2 (ja) * 1996-05-28 2002-09-24 田中電子工業株式会社 バンプ形成用金合金線及びバンプ形成方法
DE69715885T2 (de) * 1996-06-12 2003-06-05 Kazuo Ogasa Verfahren zur Herstellung von einer hochreinen Hartgoldlegierung
JP3426473B2 (ja) * 1997-07-01 2003-07-14 新日本製鐵株式会社 半導体素子用金合金細線
EP0890987B1 (de) * 1997-07-07 2003-03-05 W.C. Heraeus GmbH & Co. KG Feinstdraht aus einer Goldlegierung, Verfahren zu seiner Herstellung und seine Verwendung
DE19753055B4 (de) * 1997-11-29 2005-09-15 W.C. Heraeus Gmbh Feinstdraht aus einer Gold-Legierung, Verfahren zu seiner Herstellung und seine Verwendung
DE19821395C2 (de) 1998-05-13 2000-06-29 Heraeus Gmbh W C Verwendung eines Feinstdrahtes aus einer nickelhaltigen Gold-Legierung
US6319617B1 (en) * 1999-12-17 2001-11-20 Agere Systems Gaurdian Corp. Oxide-bondable solder
US6306516B1 (en) * 1999-12-17 2001-10-23 Agere Systems Guardian Corp. Article comprising oxide-bondable solder
JP3382918B2 (ja) 2000-05-31 2003-03-04 田中電子工業株式会社 半導体素子接続用金線
JP3323185B2 (ja) * 2000-06-19 2002-09-09 田中電子工業株式会社 半導体素子接続用金線
JP2001049364A (ja) 2000-07-03 2001-02-20 Kazuo Ogasa 硬質貴金属合金部材とその製造方法
MY140911A (en) * 2004-11-26 2010-01-29 Tanaka Electronics Ind Au bonding wire for semiconductor device
US7713390B2 (en) * 2005-05-16 2010-05-11 Applied Materials, Inc. Ground shield for a PVD chamber
DE102006006728A1 (de) * 2006-02-13 2007-08-23 W.C. Heraeus Gmbh Bonddraht
KR100796570B1 (ko) 2006-08-22 2008-02-21 헤라우스오리엔탈하이텍 주식회사 본딩용 금합금 세선
CN102127663B (zh) * 2010-12-30 2012-10-17 宁波康强电子股份有限公司 键合金丝及其制备方法
EP2871642B1 (en) 2013-11-06 2019-08-28 Airbus Defence and Space GmbH Solar cell interconnector and manufacturing method thereof
TWI656222B (zh) * 2018-08-23 2019-04-11 香港商駿碼科技(香港)有限公司 金合金封裝線材及其製備方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3211595A (en) * 1959-11-02 1965-10-12 Hughes Aircraft Co P-type alloy bonding of semiconductors using a boron-gold alloy
US3667937A (en) * 1970-10-07 1972-06-06 John A Williams Dental filling
US4018599A (en) * 1975-09-05 1977-04-19 Engelhard Minerals & Chemicals Corporation Electrical contacts of dispersion strengthened gold
JPS5282183A (en) * 1975-12-29 1977-07-09 Nec Corp Connecting wires for semiconductor devices
JPS53105968A (en) * 1977-02-26 1978-09-14 Tanaka Electronics Ind Gold wire for bonding semiconductor
JPS53112060A (en) * 1977-03-11 1978-09-30 Tanaka Electronics Ind Gold wire for bonding semiconductor
DE2741277C3 (de) * 1977-09-14 1980-03-27 Fa. Dr. Th. Wieland, 7530 Pforzheim Kupferfreie Gold-Gußlegierung fur zahnarztliche Zwecke
US4180700A (en) * 1978-03-13 1979-12-25 Medtronic, Inc. Alloy composition and brazing therewith, particularly for _ceramic-metal seals in electrical feedthroughs
US4217137A (en) * 1978-03-13 1980-08-12 Medtronic, Inc. Gold based alloy composition and brazing therewith, particularly for ceramic-metal seals in electrical feedthroughs
JPS5613740A (en) * 1979-07-16 1981-02-10 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor element
JPS5619629A (en) * 1979-07-25 1981-02-24 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor element
JPS5630731A (en) * 1979-08-21 1981-03-27 Tanaka Denshi Kogyo Kk Au solder for semiconductor element
JPS5649535A (en) * 1979-09-28 1981-05-06 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor device
JPS5649534A (en) * 1979-09-28 1981-05-06 Tanaka Kikinzoku Kogyo Kk Bonding wire for semiconductor device
US4330329A (en) * 1979-11-28 1982-05-18 Tanaka Denshi Kogyo Kabushiki Kaisha Gold bonding wire for semiconductor elements and the semiconductor element
US4374668A (en) * 1981-04-29 1983-02-22 The United States Of America As Represented By The Secretary Of The Navy Gold based electrical materials
US4387073A (en) * 1981-09-08 1983-06-07 The United States Of America As Represented By The Secretary Of The Navy Gold based electrical contact materials
JPS5896741A (ja) * 1981-12-04 1983-06-08 Mitsubishi Metal Corp 半導体素子結線用高張力au合金細線
GB2231336B (en) * 1989-04-28 1993-09-22 Tanaka Electronics Ind Gold wire for the bonding of a semiconductor device

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KR840002161A (ko) 1984-06-11
DE3237385C2 (ko) 1991-06-20
GB2116208A (en) 1983-09-21
IT8268243A0 (it) 1982-10-25
US5071619A (en) 1991-12-10
FR2517885A1 (fr) 1983-06-10
US4885135A (en) 1989-12-05
DE3237385A1 (de) 1983-06-09
GB2116208B (en) 1985-12-04
KR890003143B1 (ko) 1989-08-23
IT1156088B (it) 1987-01-28
FR2517885B1 (fr) 1987-01-30
MY8700920A (en) 1987-12-31
NL8203706A (nl) 1983-07-01
SG93487G (en) 1988-09-16

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