HK40390A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
HK40390A
HK40390A HK403/90A HK40390A HK40390A HK 40390 A HK40390 A HK 40390A HK 403/90 A HK403/90 A HK 403/90A HK 40390 A HK40390 A HK 40390A HK 40390 A HK40390 A HK 40390A
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
copper wire
bonding pad
copper
ball
Prior art date
Application number
HK403/90A
Inventor
Susumi Okikawa
Hiroshi Mikino
Hiromichi Suzuki
Wahei Kitamura
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of HK40390A publication Critical patent/HK40390A/en

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Classifications

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2924/151—Die mounting substrate
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    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

A semiconductor device in which a lead is connected to a bonding pad of a semiconductor pellet by a copper wire, and in which the copper wire is ball-bonded to the bonding pad. The copper wire is composed of copper having a purity of higher than 99.999%, and the ball portion has a microvickers hardness of 35 to 65, to reduce the likelihood of bonding damage to the semiconductor pellet and its surface layers.
HK403/90A 1984-04-19 1990-05-24 Semiconductor device HK40390A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59079113A JPS60223149A (en) 1984-04-19 1984-04-19 Semiconductor device

Publications (1)

Publication Number Publication Date
HK40390A true HK40390A (en) 1990-06-01

Family

ID=13680847

Family Applications (2)

Application Number Title Priority Date Filing Date
HK403/90A HK40390A (en) 1984-04-19 1990-05-24 Semiconductor device
HK401/90A HK40190A (en) 1984-04-19 1990-05-24 Semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
HK401/90A HK40190A (en) 1984-04-19 1990-05-24 Semiconductor device

Country Status (8)

Country Link
JP (1) JPS60223149A (en)
KR (1) KR930008979B1 (en)
DE (1) DE3514253A1 (en)
FR (2) FR2563380B1 (en)
GB (1) GB2157607B (en)
HK (2) HK40390A (en)
IT (1) IT1184445B (en)
MY (1) MY102548A (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62111455A (en) * 1985-11-08 1987-05-22 Mitsubishi Metal Corp Very thin high-purity copper wire for wire-bonding semiconductor device
JPS6294969A (en) * 1985-10-22 1987-05-01 Mitsubishi Metal Corp Bonding wire for semiconductor device
JPS61224443A (en) * 1985-03-29 1986-10-06 Mitsubishi Metal Corp Bonding wire for semiconductor device
JPH0736431B2 (en) * 1985-06-28 1995-04-19 三菱マテリアル株式会社 Manufacturing method of high-purity copper for bonding wire of semiconductor device
JPS6222469A (en) * 1985-07-22 1987-01-30 Mitsubishi Metal Corp Bonding wire for semiconductor device
US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
JP4519775B2 (en) 2004-01-29 2010-08-04 日鉱金属株式会社 Ultra-high purity copper and method for producing the same
DE102005011028A1 (en) 2005-03-08 2006-09-14 W.C. Heraeus Gmbh Copper bonding wire with improved bonding and corrosion properties
EP2133915A1 (en) * 2008-06-09 2009-12-16 Micronas GmbH Semiconductor assembly with specially formed bonds and method for manufacturing the same
US20110123389A1 (en) 2008-09-30 2011-05-26 Jx Nippon Mining & Metals Corporation High Purity Copper and Method of Producing High Purity Copper Based on Electrolysis
CN115966478A (en) * 2021-10-11 2023-04-14 恩智浦美国有限公司 Semiconductor device and method of packaging

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507033A (en) * 1965-01-06 1970-04-21 Western Electric Co Ultrasonic bonding method
DE1295844B (en) * 1965-03-30 1969-05-22 Nielsen Use of a copper alloy for contact wires
FR1524436A (en) * 1966-04-14 1968-05-10 Philips Nv Semiconductor device and circuit equipped with such a device
US3421888A (en) * 1966-08-12 1969-01-14 Calumet & Hecla Corp Copper alloy
FR1536483A (en) * 1967-07-17 1968-08-16 British Insulated Callenders Process for producing copper elements having high mechanical strength and high conductivity
DD133285A1 (en) * 1977-09-05 1978-12-20 Ruediger Uhlmann BONDING A WIRE WITH A CONNECTION PLATE
DE2752655A1 (en) * 1977-09-23 1979-06-07 Blaupunkt Werke Gmbh Electronic-component assembly for automated mass-production - has component in hole in support foil closed on one side by metal-plane heat sink
JPS56150830A (en) * 1980-04-25 1981-11-21 Hitachi Ltd Semiconductor device
DE3104960A1 (en) * 1981-02-12 1982-08-26 W.C. Heraeus Gmbh, 6450 Hanau "FINE WIRE"
NL184184C (en) * 1981-03-20 1989-05-01 Philips Nv METHOD FOR APPLYING CONTACT INCREASES TO CONTACT PLACES OF AN ELECTRONIC MICROCKETES
JPS59155161A (en) * 1983-02-23 1984-09-04 Daiichi Denko Kk Wire for bonding of semiconductor element
FR2555813B1 (en) * 1983-09-28 1986-06-20 Hitachi Ltd SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE

Also Published As

Publication number Publication date
MY102548A (en) 1992-07-31
KR850008244A (en) 1985-12-13
IT1184445B (en) 1987-10-28
FR2563380A1 (en) 1985-10-25
JPS60223149A (en) 1985-11-07
GB8503143D0 (en) 1985-03-13
GB2157607A (en) 1985-10-30
GB2157607B (en) 1988-09-28
FR2563381A1 (en) 1985-10-25
IT8520336A0 (en) 1985-04-15
HK40190A (en) 1990-06-01
DE3514253A1 (en) 1985-10-31
FR2563380B1 (en) 1987-02-27
KR930008979B1 (en) 1993-09-17

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