MY108168A - Multichip packed semiconductor device and method manufacturing the same - Google Patents

Multichip packed semiconductor device and method manufacturing the same

Info

Publication number
MY108168A
MY108168A MYPI92000179A MYPI19920179A MY108168A MY 108168 A MY108168 A MY 108168A MY PI92000179 A MYPI92000179 A MY PI92000179A MY PI19920179 A MYPI19920179 A MY PI19920179A MY 108168 A MY108168 A MY 108168A
Authority
MY
Malaysia
Prior art keywords
multichip
semiconductor device
same
method manufacturing
semiconductor chips
Prior art date
Application number
MYPI92000179A
Inventor
Sawaya Hiromichi
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of MY108168A publication Critical patent/MY108168A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49121—Beam lead frame or beam lead device

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

A PLURALITY OF SEMICONDUCTOR CHIPS (12-1, 12-2) ARE MOUNTED ON A PLURALITY OF ISLANDS (16-1, 16-2) FORMED ON A LEAD FRAME (11). INNER LEAD PORTIONS OF THE LEAD FRAME (11) AND ELECTRODE PADS FORMED ON THE SEMICONDUCTOR CHIPS (12-1, 12-2) ARE ELECTRICALLY CONNECTED TO ONE ANOTHER VIA FIRST LEAD PORTIONS (13A) FORMED ON A FLEXIBLE RESIN TAPE (14) AND THE ELECTRODE PADS FORMED ON THE SEMICONDUCTOR CHIPS (12-1, 12-2) ARE CONNECTED TO ONE ANOTHER VIA SECOND LEAD PORTIONS (13B) FORMED ON THE FLEXIBLE RESIN TAPE (14). THE FLEXIBLE RESIN TAPE (14) ON WHICH THE ISLANDS (16-1, 16-2) AND INNER LEAD PORTIONS OF THE LEAD FRAME, THE PLURALITY OF SEMICONDUCTOR CHIPS (12-1, 12-2) AND THE FIRST AND SECOND LEAD PORTIONS (13A, 13B) ARE FORMED IS SEALED INTO A RESIN PACKAGE (15). (FIG. 1A)
MYPI92000179A 1991-02-08 1992-02-03 Multichip packed semiconductor device and method manufacturing the same MY108168A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1802791 1991-02-08
JP4021857A JP2582013B2 (en) 1991-02-08 1992-01-11 Resin-sealed semiconductor device and method of manufacturing the same

Publications (1)

Publication Number Publication Date
MY108168A true MY108168A (en) 1996-08-30

Family

ID=26354636

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI92000179A MY108168A (en) 1991-02-08 1992-02-03 Multichip packed semiconductor device and method manufacturing the same

Country Status (6)

Country Link
US (2) US5245215A (en)
EP (1) EP0498446B1 (en)
JP (1) JP2582013B2 (en)
DE (1) DE69216867T2 (en)
MY (1) MY108168A (en)
TW (2) TW329533B (en)

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04273451A (en) * 1991-02-28 1992-09-29 Nippon Steel Corp Semiconductor device
US5831332A (en) * 1991-05-17 1998-11-03 Fujitsu Limited Semiconductor package for surface mounting
DE69222084T2 (en) * 1991-05-17 1998-01-22 Fujitsu Ltd Surface mount semiconductor package
JP2801810B2 (en) * 1992-04-14 1998-09-21 株式会社東芝 Resin-sealed semiconductor device
JPH05299456A (en) * 1992-04-20 1993-11-12 Toshiba Corp Semiconductor device sealed with resin
MY109101A (en) * 1992-05-25 1996-12-31 Hitachi Ltd Thin type semiconductor device, module structure using the device and method of mounting the device on board
JPH06151685A (en) * 1992-11-04 1994-05-31 Mitsubishi Electric Corp Mcp semiconductor device
JP2714335B2 (en) * 1992-12-16 1998-02-16 株式会社東芝 Semiconductor device
US5497032A (en) * 1993-03-17 1996-03-05 Fujitsu Limited Semiconductor device and lead frame therefore
KR100292036B1 (en) * 1993-08-27 2001-09-17 윤종용 Method for fabricating semiconductor package and semiconductor package thereof
JP2701712B2 (en) * 1993-11-11 1998-01-21 日本電気株式会社 Semiconductor device
JP2866572B2 (en) * 1994-02-07 1999-03-08 三菱電機株式会社 Semiconductor manufacturing method
JPH0888312A (en) * 1994-09-14 1996-04-02 Nec Corp Resin-sealed semiconductor device
KR100248035B1 (en) * 1994-09-29 2000-03-15 니시무로 타이죠 Semiconductor package
JPH08111491A (en) * 1994-10-12 1996-04-30 Toshiba Corp Semiconductor device
US5545850A (en) * 1995-01-13 1996-08-13 Olin Corporation Guard ring for integrated circuit package
DE19507132A1 (en) * 1995-03-01 1996-09-05 Siemens Ag Arrangement of electronic components on a carrier strip
SE516160C2 (en) 1995-04-28 2001-11-26 Ericsson Telefon Ab L M Enclosed optoelectronic component
FR2734983B1 (en) * 1995-05-29 1997-07-04 Sgs Thomson Microelectronics USE OF A MICROMODULE AS A SURFACE MOUNT HOUSING AND METHOD THEREOF
FR2734984B1 (en) * 1995-05-29 1997-08-22 Sgs Thomson Microelectronics USE OF A MICROMODULE AS A SURFACE MOUNT HOUSING AND METHOD THEREOF
JP2894254B2 (en) * 1995-09-20 1999-05-24 ソニー株式会社 Semiconductor package manufacturing method
US6066890A (en) * 1995-11-13 2000-05-23 Siliconix Incorporated Separate circuit devices in an intra-package configuration and assembly techniques
US5760465A (en) * 1996-02-01 1998-06-02 International Business Machines Corporation Electronic package with strain relief means
JP2798040B2 (en) * 1996-02-21 1998-09-17 日本電気株式会社 Method for manufacturing semiconductor device
US6271584B1 (en) 1996-02-28 2001-08-07 Siemens Aktiengesellschaft Arrangement of electronic components on a bearer strip
JPH09260550A (en) * 1996-03-22 1997-10-03 Mitsubishi Electric Corp Semiconductor device
US5956601A (en) * 1996-04-25 1999-09-21 Kabushiki Kaisha Toshiba Method of mounting a plurality of semiconductor devices in corresponding supporters
JP2812303B2 (en) * 1996-07-04 1998-10-22 日本電気株式会社 TAB tape semiconductor device
US5905750A (en) * 1996-10-15 1999-05-18 Motorola, Inc. Semiconductor laser package and method of fabrication
US5881084A (en) * 1997-03-10 1999-03-09 Motorola, Inc. Semiconductor laser for package with power monitoring system
US5953355A (en) * 1997-04-02 1999-09-14 Motorola, Inc. Semiconductor laser package with power monitoring system
US6355881B1 (en) 1997-05-05 2002-03-12 Brant P. Braeges Means for sealing an electronic or optical component within an enclosure housing
JP3487173B2 (en) * 1997-05-26 2004-01-13 セイコーエプソン株式会社 TAB tape carrier, integrated circuit device and electronic equipment
US5918112A (en) * 1997-07-24 1999-06-29 Motorola, Inc. Semiconductor component and method of fabrication
US6300687B1 (en) * 1998-06-26 2001-10-09 International Business Machines Corporation Micro-flex technology in semiconductor packages
US6777785B1 (en) * 1999-08-25 2004-08-17 Winbond Electronics Corp. Lead frame containing a master and a slave IC chips and a testing circuit embedded within the master IC chip
US6146984A (en) * 1999-10-08 2000-11-14 Agilent Technologies Inc. Method and structure for uniform height solder bumps on a semiconductor wafer
FR2805083A1 (en) * 2000-02-10 2001-08-17 Bull Sa METHOD FOR MOUNTING AND MANUFACTURING INTEGRATED CIRCUITS ON A SUPPORT AND SUPPORT THEREFOR
JP3650001B2 (en) * 2000-07-05 2005-05-18 三洋電機株式会社 Semiconductor device and manufacturing method thereof
US6552416B1 (en) * 2000-09-08 2003-04-22 Amkor Technology, Inc. Multiple die lead frame package with enhanced die-to-die interconnect routing using internal lead trace wiring
JPWO2002059478A1 (en) * 2001-01-24 2004-05-27 株式会社日立製作所 Ignition device for internal combustion engine
JP3839267B2 (en) * 2001-03-08 2006-11-01 株式会社ルネサステクノロジ Semiconductor device and communication terminal device using the same
US6791166B1 (en) 2001-04-09 2004-09-14 Amkor Technology, Inc. Stackable lead frame package using exposed internal lead traces
DE10125697B4 (en) * 2001-05-25 2019-01-03 Infineon Technologies Ag Power semiconductor module and method for manufacturing a power semiconductor module
KR100426330B1 (en) * 2001-07-16 2004-04-08 삼성전자주식회사 Ultra-Thin Semiconductor Package Device Using a Support Tape
KR100444172B1 (en) * 2001-12-28 2004-08-11 동부전자 주식회사 multi chip semiconductor package
JP2004103703A (en) * 2002-09-06 2004-04-02 Ricoh Co Ltd Semiconductor device and processing system of signals having different levels using that semiconductor device
JP4357344B2 (en) * 2004-04-16 2009-11-04 株式会社ルネサステクノロジ Semiconductor device
JP2005300485A (en) * 2004-04-16 2005-10-27 Renesas Technology Corp Semiconductor device
JP4666592B2 (en) * 2005-03-18 2011-04-06 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
US20070130759A1 (en) * 2005-06-15 2007-06-14 Gem Services, Inc. Semiconductor device package leadframe formed from multiple metal layers
DE102005038755B4 (en) * 2005-08-17 2016-03-10 Robert Bosch Gmbh Micromechanical component
CN101068005B (en) * 2006-05-02 2010-12-29 捷敏服务公司 Semiconductor device package leadframe formed from multiple metal layers
US7808088B2 (en) * 2006-06-07 2010-10-05 Texas Instruments Incorporated Semiconductor device with improved high current performance
DE102007003182B4 (en) * 2007-01-22 2019-11-28 Snaptrack Inc. Electrical component
JP2009099905A (en) * 2007-10-19 2009-05-07 Rohm Co Ltd Semiconductor device
JP5233337B2 (en) * 2008-03-17 2013-07-10 富士電機株式会社 Semiconductor device and manufacturing method of semiconductor device
JP5233338B2 (en) * 2008-03-17 2013-07-10 富士電機株式会社 Semiconductor device and manufacturing method of semiconductor device
JP5233341B2 (en) * 2008-03-17 2013-07-10 富士電機株式会社 Semiconductor device and manufacturing method of semiconductor device
JP2009224529A (en) * 2008-03-17 2009-10-01 Fuji Electric Device Technology Co Ltd Semiconductor device and its manufacturing method
JP5233340B2 (en) * 2008-03-17 2013-07-10 富士電機株式会社 Semiconductor device and manufacturing method of semiconductor device
JP5233336B2 (en) * 2008-03-17 2013-07-10 富士電機株式会社 Semiconductor device and manufacturing method of semiconductor device
JP5233339B2 (en) * 2008-03-17 2013-07-10 富士電機株式会社 Semiconductor device and manufacturing method of semiconductor device
US8253241B2 (en) 2008-05-20 2012-08-28 Infineon Technologies Ag Electronic module
US7847375B2 (en) * 2008-08-05 2010-12-07 Infineon Technologies Ag Electronic device and method of manufacturing same
US20100252918A1 (en) * 2009-04-06 2010-10-07 Jiang Hunt H Multi-die package with improved heat dissipation
US8227904B2 (en) 2009-06-24 2012-07-24 Intel Corporation Multi-chip package and method of providing die-to-die interconnects in same
US8314487B2 (en) * 2009-12-18 2012-11-20 Infineon Technologies Ag Flange for semiconductor die
TWI455253B (en) * 2010-06-30 2014-10-01 Alpha & Omega Semiconductor Semiconductor Package with Adhesive Material Pre-Printed On The Lead Frame And Chip, And Its Manufacturing Method
US8951847B2 (en) 2012-01-18 2015-02-10 Intersil Americas LLC Package leadframe for dual side assembly
JP6081229B2 (en) * 2013-03-01 2017-02-15 株式会社東芝 Semiconductor device, wireless device, and storage device
CN104681509A (en) * 2013-12-03 2015-06-03 上海北京大学微电子研究院 Improved double-base-island packaging structure
CN106298724B (en) * 2015-06-25 2019-05-10 台达电子工业股份有限公司 Plastic package type power module
WO2017157753A1 (en) * 2016-03-15 2017-09-21 Philips Lighting Holding B.V. An elongated lead frame and a method of manufacturing an elongated lead frame
JP6636846B2 (en) 2016-04-14 2020-01-29 ローム株式会社 Semiconductor device and method of manufacturing semiconductor device
DE102018206482B4 (en) 2018-04-26 2024-01-25 Infineon Technologies Ag Semiconductor component with a composite clip made of composite material
JP7089995B2 (en) * 2018-09-14 2022-06-23 ルネサスエレクトロニクス株式会社 Manufacturing method of semiconductor device
CN112185267B (en) * 2019-06-12 2022-03-29 云谷（固安）科技有限公司 Circuit substrate, display panel and display device
CN112786558B (en) * 2019-11-05 2023-02-28 珠海格力电器股份有限公司 Semiconductor device and reliability verification method thereof

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524477A (en) * 1978-08-09 1980-02-21 Nec Corp Integrated circuit
FR2439478A1 (en) * 1978-10-19 1980-05-16 Cii Honeywell Bull FLAT HOUSING FOR DEVICES WITH INTEGRATED CIRCUITS
US4709468A (en) * 1986-01-31 1987-12-01 Texas Instruments Incorporated Method for producing an integrated circuit product having a polyimide film interconnection structure
US4774635A (en) * 1986-05-27 1988-09-27 American Telephone And Telegraph Company At&T Bell Laboratories Semiconductor package with high density I/O lead connection
JPS634636A (en) * 1986-06-25 1988-01-09 Hitachi Vlsi Eng Corp Semiconductor device
JPS63137439A (en) * 1986-11-28 1988-06-09 Nec Corp Integrated circuit chip
US4755866A (en) * 1987-02-27 1988-07-05 United Technologies Corporation Electronic circuit module
JPH0834264B2 (en) * 1987-04-21 1996-03-29 住友電気工業株式会社 Semiconductor device and manufacturing method thereof
IT1214254B (en) * 1987-09-23 1990-01-10 Sgs Microelettonica S P A SEMICONDUCTOR DEVICE IN PLASTIC OR CERAMIC CONTAINER WITH "CHIPS" FIXED ON BOTH SIDES OF THE CENTRAL ISLAND OF THE "FRAME".
JPH01105551A (en) * 1987-10-19 1989-04-24 Hitachi Ltd Electronic device
JPH01187959A (en) * 1988-01-22 1989-07-27 Matsushita Electron Corp Resin seal type semiconductor device
KR970011649B1 (en) * 1988-03-10 1997-07-12 가부시끼가이샤 히다찌세이사꾸쇼 Process of producing semiconductor device
EP0337485A3 (en) * 1988-04-15 1991-04-03 Nippon Telegraph And Telephone Corporation Film carrier for rf ic
JPH02290033A (en) * 1988-04-26 1990-11-29 Nec Corp Integrated circuit aggregate
US5096852A (en) * 1988-06-02 1992-03-17 Burr-Brown Corporation Method of making plastic encapsulated multichip hybrid integrated circuits
GB2219435B (en) * 1988-06-02 1991-07-03 Burr Brown Corp Plastic encapsulated multichip hybrid integrated circuit
JPH01308058A (en) * 1988-06-06 1989-12-12 Hitachi Ltd Electronic device
JPH02121343A (en) * 1988-10-28 1990-05-09 Ibiden Co Ltd Film carrier
JPH02130947A (en) * 1988-11-11 1990-05-18 Mitsubishi Electric Corp Semiconductor device
US5032542A (en) * 1988-11-18 1991-07-16 Sanyo Electric Co., Ltd. Method of mass-producing integrated circuit devices using strip lead frame
JPH02161738A (en) * 1988-12-15 1990-06-21 Hitachi Cable Ltd Tape carrier for tab
US5084753A (en) * 1989-01-23 1992-01-28 Analog Devices, Inc. Packaging for multiple chips on a single leadframe
JPH02230749A (en) * 1989-03-03 1990-09-13 Toshiba Corp Semiconductor chip and semiconductor device using the same chip
JPH0350758A (en) * 1989-07-18 1991-03-05 Toshiba Corp Resin seal type semiconductor device
JPH0777256B2 (en) * 1989-08-25 1995-08-16 株式会社東芝 Resin-sealed semiconductor device
US5138436A (en) * 1990-11-16 1992-08-11 Ball Corporation Interconnect package having means for waveguide transmission of rf signals

Also Published As

Publication number Publication date
TW331441U (en) 1998-05-01
US5352632A (en) 1994-10-04
EP0498446B1 (en) 1997-01-22
EP0498446A2 (en) 1992-08-12
DE69216867T2 (en) 1997-06-05
JPH0661406A (en) 1994-03-04
JP2582013B2 (en) 1997-02-19
DE69216867D1 (en) 1997-03-06
TW329533B (en) 1998-04-11
US5245215A (en) 1993-09-14
EP0498446A3 (en) 1993-10-20

Similar Documents

Publication Publication Date Title
MY108168A (en) Multichip packed semiconductor device and method manufacturing the same
EP0247775A3 (en) Semiconductor package with high density i/o lead connection
MY109101A (en) Thin type semiconductor device, module structure using the device and method of mounting the device on board
KR0119464B1 (en) Semiconductor device and lead frame
TW344873B (en) Semiconductor device, manufacture thereof, and its mounting method
TW329034B (en) IC package
MY109587A (en) Semiconductor device
KR960001604B1 (en) Semiconductor device with an encapsulation package
MY124460A (en) A package housing multiple semiconductor dies
EP0977251A4 (en) Resin sealed semiconductor device and method for manufacturing the same
MY121890A (en) Semiconductor device with small die pad and method of making same
EP0377932A3 (en) Package of semiconductor integrated circuits
MY105095A (en) Semiconductor device having an improved lead arrangement and method for manufacturing the same.
EP0179577A3 (en) Method for making a semiconductor device having conductor pins
SG77704A1 (en) Semiconductor device and method of fabricating the same
JPS641269A (en) Semiconductor device
EP0299775A3 (en) Tab bonded semiconductor chip package
GB9510212D0 (en) Method of connecting the output pads on an integrated circuit chip,and multichip module thus obtained
FR2666931B1 (en)
MY119797A (en) Resin-molded semiconductor device having a lead on chip structure
GB2138633B (en) Bonding semiconductor chips to a lead frame
SG165145A1 (en) Film carrier tape
EP0758798A3 (en) Semiconductor device with enhanced electrical characteristic
JPS5651851A (en) Semiconductor device
JPS57104235A (en) Semiconductor device