CN104681509A - Improved double-base-island packaging structure - Google Patents

Improved double-base-island packaging structure Download PDF

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Publication number
CN104681509A
CN104681509A CN201310637910.6A CN201310637910A CN104681509A CN 104681509 A CN104681509 A CN 104681509A CN 201310637910 A CN201310637910 A CN 201310637910A CN 104681509 A CN104681509 A CN 104681509A
Authority
CN
China
Prior art keywords
island
base
packaging structure
double
improved double
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310637910.6A
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Chinese (zh)
Inventor
陆宇
杨丰
郑若彤
程玉华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Research Institute of Microelectronics of Peking University
Original Assignee
Shanghai Research Institute of Microelectronics of Peking University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Research Institute of Microelectronics of Peking University filed Critical Shanghai Research Institute of Microelectronics of Peking University
Priority to CN201310637910.6A priority Critical patent/CN104681509A/en
Publication of CN104681509A publication Critical patent/CN104681509A/en
Pending legal-status Critical Current

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Abstract

The invention provides an improved double-base-island packaging structure. The improved double-base-island packaging structure comprises a plastic package body, an outer pin, a base island which is exposed by a heat radiation material, a base island which is not exposed and two chips. With the adoption of the improved double-base-island packaging structure, the heat radiation problem of a traditional double-base-island packaging structure is solved and the problems of bad performance and low integration degree of a single-base-island packaging structure are also solved. With the adoption of the improved double-base-island packaging structure, the manufacturing cost is reduced and the development requirements of microminiaturization of small sectional materials of electronic industries can be met.

Description

A kind of follow-on double-basis island encapsulating structure
Technical field
The present invention relates to integrated circuit fields, particularly relate to ic chip package technical field.
Background technology
The many employings of existing ic chip package technology encapsulate a chips on a plastic-sealed body, and You Yigeji island in a plastic-sealed body, chip is placed on Ji Dao.When two chips need to combinationally use, existing technology many by two chip packages in two plastic-sealed bodies, connected by peripheral line, greatly can ensure the reliability of chip like this, but there is the problem that performance is not good, owing to adopting two plastic-sealed bodies, cost is also very high.
At present, there is a kind of encapsulating structure of double-basis island, there is Liang Geji island in a plastic-sealed body simultaneously, two chips are placed in Liang Geji island respectively, because the chip be associated two is arranged in the Liang Geji island of a plastic-sealed body inside, its stability is strengthened greatly, and cost also reduces greatly.But be placed on by two chips in a plastic-sealed body, chip self heat energy distributed that works can not well be discharged, and this can affect the performance of chip greatly, even causes wafer damage.
Summary of the invention
The invention provides a kind of follow-on double-basis island encapsulating structure, in Liang Geji island is designed by heat radiation material Shi Ji island and exposes, expose on Ji Dao and can place the larger chip of power dissipation ratio; Another Ji Dao is still all wrapped in plastic-sealed body.
The invention solves the heat dissipation problem of traditional double-basis island encapsulating structure, solve the problem that Dan Ji island performance is not good and integrated level is low, the present invention makes manufacturing cost be reduced, and can meet electron trade small section warp simultaneously, microminiaturized growth requirement.
Accompanying drawing explanation
Fig. 1 is the present invention follow-on double-basis island encapsulating structure.
Embodiment
Fig. 1 is the present invention follow-on double-basis island encapsulating structure, it comprises plastic-sealed body 1, outer pin 4, chip 3, chip 6, base island 2, base island 5, chip 6 is placed on base island 5, and chip 3 is placed on base island 2, is connected on outer pin by the PAD on chip during encapsulation by line.
Unique distinction of the present invention is the Ge Ji island in base island 2 and base island 5 to expose, and it drawn from the body of packaging body by heat radiation material, Ji Dao exposes, and the thermal capacitance of its encapsulation is long-pending larger, has good heat dissipation characteristics.Heat radiation material with exposing Ji Dao and contacting, can be installed on PCB by Reflow Soldering in assembling process.Fin is served as in the ground area that circuit board can be made like this to spread copper.
Another Ji Dao in base island 2 and base island 5 does not expose, and is all wrapped in plastic-sealed body, and this Ji Dao does not expose and can well meet safety creepage distance required by encapsulation and electric clearance, and chip reliability is improved greatly.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.

Claims (3)

1. follow-on double-basis island encapsulating structure, is characterized in that, comprise: plastic-sealed body, outer pin, two chips, Liang Geji island.
2. follow-on double-basis island encapsulating structure, is characterized in that, described two chips are placed in two different base islands respectively.
3. follow-on double-basis island encapsulating structure, is characterized in that, one, described Liang Geji island is all wrapped in plastic-sealed body, and one is exposed outside plastic-sealed body by heat radiation material.
CN201310637910.6A 2013-12-03 2013-12-03 Improved double-base-island packaging structure Pending CN104681509A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310637910.6A CN104681509A (en) 2013-12-03 2013-12-03 Improved double-base-island packaging structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310637910.6A CN104681509A (en) 2013-12-03 2013-12-03 Improved double-base-island packaging structure

Publications (1)

Publication Number Publication Date
CN104681509A true CN104681509A (en) 2015-06-03

Family

ID=53316380

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310637910.6A Pending CN104681509A (en) 2013-12-03 2013-12-03 Improved double-base-island packaging structure

Country Status (1)

Country Link
CN (1) CN104681509A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105789198A (en) * 2016-04-07 2016-07-20 无锡矽瑞微电子股份有限公司 Integrated SIP system packaging architecture

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2582013B2 (en) * 1991-02-08 1997-02-19 株式会社東芝 Resin-sealed semiconductor device and method of manufacturing the same
CN1738034A (en) * 2005-07-02 2006-02-22 江苏长电科技股份有限公司 Integrated circuit or discrete component flat array bump package structure
JP2007317781A (en) * 2006-05-24 2007-12-06 Denso Corp Semiconductor device
CN101118895A (en) * 2006-08-03 2008-02-06 飞思卡尔半导体公司 Semiconductor element with embedded heat sink
CN202352648U (en) * 2011-12-14 2012-07-25 深圳市威怡电气有限公司 Power module
CN202564323U (en) * 2012-05-09 2012-11-28 江苏长电科技股份有限公司 Multi-base-island-exposed type multi-circle multi-chip normally-equipped and normally-equipped packaging structure
CN102893396A (en) * 2010-07-22 2013-01-23 松下电器产业株式会社 Semiconductor device and method for manufacturing same

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2582013B2 (en) * 1991-02-08 1997-02-19 株式会社東芝 Resin-sealed semiconductor device and method of manufacturing the same
CN1738034A (en) * 2005-07-02 2006-02-22 江苏长电科技股份有限公司 Integrated circuit or discrete component flat array bump package structure
JP2007317781A (en) * 2006-05-24 2007-12-06 Denso Corp Semiconductor device
CN101118895A (en) * 2006-08-03 2008-02-06 飞思卡尔半导体公司 Semiconductor element with embedded heat sink
CN102893396A (en) * 2010-07-22 2013-01-23 松下电器产业株式会社 Semiconductor device and method for manufacturing same
CN202352648U (en) * 2011-12-14 2012-07-25 深圳市威怡电气有限公司 Power module
CN202564323U (en) * 2012-05-09 2012-11-28 江苏长电科技股份有限公司 Multi-base-island-exposed type multi-circle multi-chip normally-equipped and normally-equipped packaging structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105789198A (en) * 2016-04-07 2016-07-20 无锡矽瑞微电子股份有限公司 Integrated SIP system packaging architecture

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