CN204011394U - Twin islet SOP encapsulating structure - Google Patents
Twin islet SOP encapsulating structure Download PDFInfo
- Publication number
- CN204011394U CN204011394U CN201420294943.5U CN201420294943U CN204011394U CN 204011394 U CN204011394 U CN 204011394U CN 201420294943 U CN201420294943 U CN 201420294943U CN 204011394 U CN204011394 U CN 204011394U
- Authority
- CN
- China
- Prior art keywords
- slide glass
- glass district
- encapsulating structure
- sop
- twin islet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011521 glass Substances 0.000 claims abstract description 56
- 238000007373 indentation Methods 0.000 claims abstract description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model discloses a kind of twin islet SOP encapsulating structure, comprise lead frame and plastic-sealed body, described lead frame comprises interior pin and slide glass district, described slide glass district comprises small one and large one two and be separated from each other, be not communicated with mutually, the first slide glass district is rectangular one jiao and lacks " L " type structure that a breach forms, the second slide glass district comprises interconnecting the flagpole portion that is integrated and the flag shape structure of flag face, wherein said flag face is for rectangle and be located at described indentation, there, the interior pin extension to opposite from described flag face of described flagpole portion, the Area Ratio in described the second slide glass district and the first slide glass district is 0.2:1～0.9:1.The utility model, in the time need to encapsulating small one and large one chip, can meet larger dimensional requirement simultaneously.Therefore larger slide glass district means better heat-sinking capability, the heat-sinking capability of high-power chip is enhanced, and in encapsulation one, during a high-power and small-power chip, can improve the unbalanced problem of Liang Ge slide glass district's temperature rise.
Description
Technical field
The utility model relates to semiconductor packages, particularly relates to a kind of twin islet SOP encapsulating structure.
Background technology
In recent decades, chip encapsulation technology is always along with the development of integrated circuit technique.Encapsulating structure refers to the shell that semiconductor integrated circuit chip is used; it not only plays a part to install, fixes, seals, protects chip and strengthens the aspects such as electric heating property; but also by the contact on chip, be wired on the pin of package casing, these pins are connected with other device by the wire on printed circuit board (PCB) again.Therefore, encapsulating structure generally comprises for installing, the lead frame of fixing and lead-in wire, also comprises for the protection of chip, sealing the packaging body (Package Body) that matches with lead frame simultaneously.
Lead frame comprises for welding semiconductor chip, being positioned at the slide glass district of lead frame central area, and is arranged in slide glass district pin around.When encapsulation, first semiconductor chip is arranged in to slide glass district, then use packaging body (such as plastic packaging materials such as epoxy resin) epoxy seal semiconductor chip and lead frame.
The twin islet framework of traditional SOP (Small Outline Package, little outline packages), Liang Ge slide glass district is the rectangle structure that size is close.Can run in actual applications and need the chip of encapsulation for small one and large one, wherein larger chip size is greater than the situation of the bearing capacity in slide glass district.And run into two chips power small one and large one, slide glass district is difficult to meet the situation of the radiating requirements of relatively high power chip.
Utility model content
Based on this, be necessary to provide a kind of and can be applicable to encapsulate small one and large one dual chip simultaneously, and the twin islet SOP encapsulating structure of the demand of encapsulation one high-power chip and a small-power chip.
A kind of twin islet SOP encapsulating structure, comprise lead frame and plastic-sealed body, described lead frame comprises interior pin and slide glass district, described slide glass district comprises small one and large one two and be separated from each other, be not communicated with mutually, the first slide glass district is rectangular one jiao and lacks " L " type structure that a breach forms, the second slide glass district comprises interconnecting the flagpole portion that is integrated and the flag shape structure of flag face, wherein said flag face is for rectangle and be located at described indentation, there, the interior pin extension to opposite from described flag face of described flagpole portion, the Area Ratio in described the second slide glass district and the first slide glass district is 0.2:1～0.9:1.
In an embodiment, the quantity of described interior pin is 8 therein, and both sides are respectively provided with 4, and wherein interior pin is connected with described flagpole portion.
In an embodiment, in 4 interior pins of contiguous described flag face, middle two is T-shape structure therein, and each of both sides is " L " type structure; In 4 interior pins of opposite side, one of the interior pin being connected with flagpole portion described in being close to is T-shape structure, and another two are connected in described the first slide glass district.
In an embodiment, the quantity of described interior pin is 7 therein.
In an embodiment, described plastic-sealed body is epoxy resin plastic-sealed body therein.
Therein in an embodiment, described the first slide glass district is for exposing island structure, and described encapsulating structure also comprises the fin that the size with described the first slide glass district matches.
Therein in an embodiment, the one side that described radiating fin exposed outside contacts with circuit board when described encapsulating structure paster.
In an embodiment, described radiating fin exposed outside deviates from the one side of circuit board when described encapsulating structure paster therein.
In an embodiment, described fin is copper sheet therein.
In an embodiment, described breach is rectangle breach therein.
Above-mentioned twin islet SOP encapsulating structure, slide glass district is set to small one and large one structure, in the time need to encapsulating small one and large one chip, can meet larger dimensional requirement simultaneously." L " in large slide glass district be not although the part that type structure protrudes there is help to carrying larger sized chip, but larger slide glass district means better heat-sinking capability, therefore the heat-sinking capability of high-power chip is enhanced, when an encapsulation one high-power and small-power chip, can improve the unbalanced problem of Liang Ge slide glass district's temperature rise.
Accompanying drawing explanation
By the more specifically explanation of the preferred embodiment of the present utility model shown in accompanying drawing, above-mentioned and other object of the present utility model, that Characteristics and advantages will become will be more clear.In whole accompanying drawings, identical Reference numeral is indicated identical part, and deliberately by actual size equal proportion convergent-divergent, draws accompanying drawing, focuses on illustrating purport of the present utility model.
Fig. 1 is the schematic diagram of lead frame in an embodiment.
Embodiment
For the ease of understanding the utility model, below with reference to relevant drawings, the utility model is described more fully.In accompanying drawing, provided first-selected embodiment of the present utility model.But the utility model can be realized in many different forms, be not limited to embodiment described herein.On the contrary, providing the object of these embodiment is to make to disclosure of the present utility model more thoroughly comprehensively.
It should be noted that, when element is called as " being fixed on " another element, can directly can there is element placed in the middle in it on another element or also.When an element is considered to " connection " another element, it can be directly connected to another element or may have centering elements simultaneously.Term as used herein " vertical ", " level ", " left side ", " right side " and similar statement are just for illustrative purposes.
Unless otherwise defined, all technology of using are herein identical with the implication that belongs to the common understanding of those skilled in the art of the present utility model with scientific terminology.The term using in specification of the present utility model herein, just in order to describe the object of specific embodiment, is not intended to be restriction the utility model.Term as used herein " and/or " comprise one or more relevant Listed Items arbitrarily with all combinations.
Twin islet SOP encapsulating structure of the present utility model comprises lead frame and plastic-sealed body, and lead frame comprises interior pin and slide glass district.Please refer to Fig. 1, slide glass district comprises small one and large one two, and is separated from each other, is not communicated with mutually.Large slide glass 10 is rectangular one jiao " L " type structure that lacks a breach formation.Little slide glass district 20 comprises interconnecting the flagpole portion 22 that is integrated and the flag shape structure of flag face 24, and wherein flag face 24 is for rectangle and be located at " L " type structure indentation, there, and from flag face 24, the interior pin to opposite extends in flagpole portion 22.The Area Ratio in little slide glass district 20He great slide glass district 10 is between 0.2:1～0.9:1.In two slide glass districts, each bonding chip, realizes the isolation of substrate.Chip can be by insulating cement or conductive adhesive in slide glass district.
Above-mentioned twin islet SOP encapsulating structure, slide glass district is set to small one and large one structure, in the time need to encapsulating small one and large one chip, can meet larger dimensional requirement simultaneously." L " in large slide glass district 10 be not although the part that type structure protrudes there is help to carrying larger sized chip, but larger slide glass district means better heat-sinking capability, therefore the heat-sinking capability of high-power chip is enhanced, when an encapsulation one high-power and small-power chip, can improve the unbalanced problem of Liang Ge slide glass district's temperature rise.
Embodiment illustrated in fig. 1 is the encapsulating structure of SOP-8 type, and both sides are respectively provided with 4, establish 8 interior pins (being numbered 1～8 in Fig. 1) altogether, and wherein interior pin 8 is connected with flagpole portion 22.In 4 interior pins of the contiguous flag face 24 in left side, middle two interior pins 2 and 3 be T-shape structure, and respectively interior pin 1 and 4 on both sides is " L " type structure.In 4 interior pins on right side, the interior pin 7 of contiguous interior pin 8 is T-shape structure, and another two interior pins 5 and 6 are connected in large slide glass district 10.
In other embodiments, twin islet SOP encapsulating structure of the present utility model is equally applicable to be provided with the encapsulation of the SOP-7 type of 7 pins.
In order better chip to be dispelled the heat, in an embodiment, Jiang great slide glass district 10 is set to expose island structure therein, and simultaneously Wei great slide glass district 10 arranges the fin exposing, and forms the opening that the size with fin matches during manufacture on plastic-sealed body.Fin can be arranged at the one side contacting with printed circuit board (PCB) (PCB), and fin dispels the heat by direct contact pcb board.Also fin can be located to the one side that deviates from PCB, fin dispels the heat by air.In other embodiments, can also also be set to expose island structure in Jiang little slide glass district 20, and also relative set fin, the fin in large slide glass district 10He little slide glass district 20 is isolated by plastic-sealed body each other.In the situation that two fin is set, because the distance of two fin is very near, when welding (such as Reflow Soldering), the scolding tin of melting is easily communicated with two fin to cause short circuit, causes inefficacy.Therefore two fin are communicated with for fear of scolding tin, two fin can be located to the one side that encapsulating structure deviates from PCB.
In an embodiment, the material of plastic-sealed body is epoxy resin therein, and the material of fin is copper.
The above embodiment has only expressed several execution mode of the present utility model, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to the utility model the scope of the claims.It should be pointed out that for the person of ordinary skill of the art, without departing from the concept of the premise utility, can also make some distortion and improvement, these all belong to protection range of the present utility model.Therefore, the protection range of the utility model patent should be as the criterion with claims.
Claims (10)
1. a twin islet SOP encapsulating structure, comprise lead frame and plastic-sealed body, described lead frame comprises interior pin and slide glass district, it is characterized in that, described slide glass district comprises the first slide glass district and two, the second slide glass district and is separated from each other, be not communicated with mutually, described the first slide glass district is rectangular one jiao and lacks " L " type structure that a breach forms, described the second slide glass district comprises interconnecting the flagpole portion that is integrated and the flag shape structure of flag face, wherein said flag face is for rectangle and be located at described indentation, there, the interior pin extension to opposite from described flag face of described flagpole portion, the Area Ratio in described the second slide glass district and the first slide glass district is 0.2:1～0.9:1.
2. twin islet SOP encapsulating structure according to claim 1, is characterized in that, the quantity of described interior pin is 8, and both sides are respectively provided with 4, and wherein interior pin is connected with described flagpole portion.
3. twin islet SOP encapsulating structure according to claim 2, is characterized in that, in 4 interior pins of contiguous described flag face, middle two is T-shape structure, and each of both sides is " L " type structure; In 4 interior pins of opposite side, one of the interior pin being connected with flagpole portion described in being close to is T-shape structure, and another two are connected in described the first slide glass district.
4. twin islet SOP encapsulating structure according to claim 1, is characterized in that, the quantity of described interior pin is 7.
5. twin islet SOP encapsulating structure according to claim 1, is characterized in that, described plastic-sealed body is epoxy resin plastic-sealed body.
6. twin islet SOP encapsulating structure according to claim 1, is characterized in that, described the first slide glass district is for exposing island structure, and described encapsulating structure also comprises the fin that the size with described the first slide glass district matches.
7. twin islet SOP encapsulating structure according to claim 6, is characterized in that, the one side that described radiating fin exposed outside contacts with circuit board when described encapsulating structure paster.
8. twin islet SOP encapsulating structure according to claim 6, is characterized in that, described radiating fin exposed outside deviates from the one side of circuit board when described encapsulating structure paster.
9. twin islet SOP encapsulating structure according to claim 6, is characterized in that, described fin is copper sheet.
10. twin islet SOP encapsulating structure according to claim 1, is characterized in that, described breach is rectangle breach.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420294943.5U CN204011394U (en) | 2014-06-04 | 2014-06-04 | Twin islet SOP encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420294943.5U CN204011394U (en) | 2014-06-04 | 2014-06-04 | Twin islet SOP encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204011394U true CN204011394U (en) | 2014-12-10 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420294943.5U Expired - Lifetime CN204011394U (en) | 2014-06-04 | 2014-06-04 | Twin islet SOP encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204011394U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104766920A (en) * | 2015-01-26 | 2015-07-08 | 广州华微电子有限公司 | SOP8 package lead frame of high-power LED driving chip |
| CN104810462A (en) * | 2015-04-17 | 2015-07-29 | 广州华微电子有限公司 | ESOP8 lead frame of medium-and high-power LED driving chip |
| CN104867884A (en) * | 2015-04-07 | 2015-08-26 | 山东晶导微电子有限公司 | High-heat-radiation SMT diode packaging structure |
| CN108417554A (en) * | 2018-05-18 | 2018-08-17 | 上海晶丰明源半导体股份有限公司 | Lead frame, array of lead frames and packaging body |
-
2014
- 2014-06-04 CN CN201420294943.5U patent/CN204011394U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104766920A (en) * | 2015-01-26 | 2015-07-08 | 广州华微电子有限公司 | SOP8 package lead frame of high-power LED driving chip |
| CN104867884A (en) * | 2015-04-07 | 2015-08-26 | 山东晶导微电子有限公司 | High-heat-radiation SMT diode packaging structure |
| CN104867884B (en) * | 2015-04-07 | 2018-02-27 | 山东晶导微电子有限公司 | A kind of SMT diode package structures of high heat dispersion |
| CN104810462A (en) * | 2015-04-17 | 2015-07-29 | 广州华微电子有限公司 | ESOP8 lead frame of medium-and high-power LED driving chip |
| CN104810462B (en) * | 2015-04-17 | 2017-05-24 | 广州华微电子有限公司 | ESOP8 lead frame of medium-and high-power LED driving chip |
| CN108417554A (en) * | 2018-05-18 | 2018-08-17 | 上海晶丰明源半导体股份有限公司 | Lead frame, array of lead frames and packaging body |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20141210 |
|
| CX01 | Expiry of patent term |