CN108899283A - The encapsulating structure and its packaging method of ball grid array - Google Patents
The encapsulating structure and its packaging method of ball grid array Download PDFInfo
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- CN108899283A CN108899283A CN201810738791.6A CN201810738791A CN108899283A CN 108899283 A CN108899283 A CN 108899283A CN 201810738791 A CN201810738791 A CN 201810738791A CN 108899283 A CN108899283 A CN 108899283A
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- Prior art keywords
- soldered ball
- ball
- soldered
- size
- kernel
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 229920005989 resin Polymers 0.000 claims description 69
- 239000011347 resin Substances 0.000 claims description 69
- 238000005476 soldering Methods 0.000 claims description 53
- 239000002184 metal Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 44
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 36
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000002513 implantation Methods 0.000 claims description 7
- 238000005253 cladding Methods 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 238000004021 metal welding Methods 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 239000005022 packaging material Substances 0.000 claims description 3
- 238000003466 welding Methods 0.000 abstract description 14
- 238000010586 diagram Methods 0.000 description 12
- 238000005538 encapsulation Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- WURBVZBTWMNKQT-UHFFFAOYSA-N 1-(4-chlorophenoxy)-3,3-dimethyl-1-(1,2,4-triazol-1-yl)butan-2-one Chemical compound C1=NC=NN1C(C(=O)C(C)(C)C)OC1=CC=C(Cl)C=C1 WURBVZBTWMNKQT-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000001755 vocal effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The present invention provides a kind of encapsulating structure of ball grid array and its packaging method, the packaging method includes：A substrate is provided, a side surface of the substrate at least has first area and second area for soldered ball to be arranged；At least one first soldered ball is welded in the first area, welds at least one second soldered ball in the second area, wherein first soldered ball is different from an at least parameter for second soldered ball, and the parameter includes heat-conductive characteristic, thermal expansion coefficient and size.The encapsulating structure and its packaging method of ball grid array of the invention delimit multiple welding regions below substrate, and weld the different soldered ball of an at least parameter in each welding region, and the parameter includes heat-conductive characteristic and size；In this way, the soldered ball with different parameters can be welded according to the specific requirements of each welding region, and then promote the overall performance of the encapsulating structure of ball grid array.
Description
Technical field
The present invention relates to the encapsulating structures and its encapsulation side of technical field of semiconductor encapsulation more particularly to a kind of ball grid array
Method.
Background technique
Ball grid array（Ball Grid Array, abbreviation BGA）Encapsulation technology is using a kind of surface on the integrated
Mount technology, this technology are commonly used to be permanently fixed the device such as microprocessor.BGA package can be provided than other such as biserial
Straight cutting encapsulation（Dual in-line package）Or four side pin flat package（Quad Flat Package）It accommodates more
Pin, the bottom surface of whole device can use as pin entirely, rather than only around can be used, compared with surrounding restriction
Encapsulated type can also have shorter average conductor length, to have more preferably high speed efficiency；BGA package is in encapsulation structure base board
Bottom make array, soldered ball is as the end I/O of circuit and printed wiring board（PCB）Mutual connection.
Soldered ball has the function of electric connection, heat transfer.The arrangement mode of soldered ball can be divided into periphery row, staggered and full battle array
Column type BGA.Existing BGA package, the soldered ball of substrate back are typically all identical soldered ball.Soldered ball is bigger, and capacity of heat transmission is got over
By force, still, meanwhile, soldered ball is bigger, and occupied substrate area is bigger, exports against the high foot position of high density in BGA；Moreover, by
It is bigger in the expansion coefficient difference of substrate, printed wiring board and metal soldered ball, under the conditions of expanding with heat and contract with cold, after substrate package
Soldered ball is bigger, it is meant that the metallic area between substrate back and printed wiring board is bigger, and the shear stress of generation is also bigger, holds
Easily lead to the pad fracture of soldered ball.And if being on the one hand unfavorable for encapsulating in vivo functionality chip using smaller soldered ball
Thermal conductivity goes out, and on the other hand, the soldered ball in four corners of packaging body is easily broken off in drop impact.
Summary of the invention
The purpose of the present invention is to provide a kind of encapsulating structure of ball grid array and its packaging methods.
One of for achieving the above object, the present invention provides a kind of packaging method of ball grid array, the encapsulation side
Method includes：A substrate is provided, a side surface of the substrate at least has first area and second area for soldered ball to be arranged；
At least one first soldered ball is welded in the first area, welds at least one second soldered ball in the second area,
In, first soldered ball is different from an at least parameter for second soldered ball, and the parameter includes heat-conductive characteristic, thermal expansion system
Several and size.
As the further improvement of an embodiment of the present invention, the first area corresponding function chip, first weldering
Ball has the first heat-conductive characteristic, and second soldered ball has the second heat-conductive characteristic, and first heat-conductive characteristic is greater than institute
State the second heat-conductive characteristic.
As the further improvement of an embodiment of the present invention, first soldered ball is metal soldered ball, second soldered ball
For resin soldered ball or full soldering ball at least one, first soldered ball has a first size, and second soldered ball has the
Two sizes, the first size are equal to second size；
The metal soldered ball includes：First kernel and the first outer core for coating the first kernel, first kernel are heating conduction
And fusing point is above the metal material of tin, first outer core is tin material；The resin soldered ball includes：Second kernel and cladding
Second outer core of the second kernel, second kernel are resin material, and second outer core is tin material；The full soldering ball
Material is tin；The coefficient of expansion of the resin soldered ball is lower than the coefficient of expansion of the metal soldered ball；The expansion of the full soldering ball
Coefficient is lower than the coefficient of expansion of the metal soldered ball.
As the further improvement of an embodiment of the present invention, first soldered ball is full soldering ball, second soldered ball
Including resin soldered ball, first soldered ball has first size, and second soldered ball has the second size, described first size etc.
In second size；
The resin soldered ball includes：Second kernel and the second outer core for coating the second kernel, second kernel are resin material,
Second outer core is tin material；The material of the full soldering ball is tin；The coefficient of expansion of the resin soldered ball is complete lower than described
The coefficient of expansion of soldering ball.
As the further improvement of an embodiment of the present invention, second soldered ball further includes full soldering ball.
Another in order to achieve the above-mentioned object of the invention, an embodiment of the present invention provides a kind of encapsulating structure of ball grid array,
The encapsulating structure includes：Substrate is set to the component of the upper surface of base plate, for encapsulating the plastic packaging of the component
Soldered ball below material, and the implantation substrate；
The soldered ball includes different the first soldered ball and the second soldered ball of an at least parameter, and the parameter includes heat-conductive characteristic, heat
The coefficient of expansion and size；
The base lower surface at least has the first area for being implanted into the first soldered ball and second for being implanted into the second soldered ball
Region.
As the further improvement of an embodiment of the present invention, the component includes functional chip, the corresponding function
It is first area below the substrate of chip, first soldered ball has the first heat-conductive characteristic, and second soldered ball has second
Heat-conductive characteristic, first heat-conductive characteristic are greater than second heat-conductive characteristic.
As the further improvement of an embodiment of the present invention, first soldered ball is metal soldered ball, second soldered ball
For resin soldered ball or full soldering ball at least one, first soldered ball has a first size, and second soldered ball has the
Two sizes, the first size are equal to second size；
The metal soldered ball includes：First kernel and the first outer core for coating the first kernel, first kernel are heating conduction
And fusing point is above the metal material of tin, first outer core is tin material；The resin soldered ball includes：Second kernel and cladding
Second outer core of the second kernel, second kernel are resin material, and second outer core is tin material；The full soldering ball
Material is tin；The coefficient of expansion of the resin soldered ball is lower than the coefficient of expansion of the metal soldered ball；The expansion of the full soldering ball
Coefficient is lower than the coefficient of expansion of the metal soldered ball.
As the further improvement of an embodiment of the present invention, first soldered ball is full soldering ball, second soldered ball
Including resin soldered ball, first soldered ball has first size, and second soldered ball has the second size, described first size etc.
In second size；
The resin soldered ball includes：Second kernel and the second outer core for coating the second kernel, second kernel are resin material,
Second outer core is tin material；The material of the full soldering ball is tin；The coefficient of expansion of the resin soldered ball is complete lower than described
The coefficient of expansion of soldering ball.
As the further improvement of an embodiment of the present invention, second soldered ball further includes full soldering ball.
The beneficial effects of the invention are as follows：The encapsulating structure and its packaging method of ball grid array of the invention, below substrate
Multiple welding regions delimited, and weld the different soldered ball of an at least parameter in each welding region, the parameter includes heat transfer
Performance, thermal expansion coefficient and size；In this way, the weldering with different parameters can be welded according to the specific requirements of each welding region
Ball, and then promote the overall performance of the encapsulating structure of ball grid array.
Detailed description of the invention
Fig. 1 is the flow diagram of the packaging method for the ball grid array that first embodiment of the invention provides；
Fig. 2 is the flow diagram of the packaging method for the ball grid array that second embodiment of the invention provides；
Fig. 3 is the encapsulating structure overlooking structure diagram for the ball grid array that an embodiment of the present invention provides；
Fig. 4 A is that structural schematic diagram is cutd open in the side of the encapsulating structure for the ball grid array that first embodiment of the invention provides；
Fig. 4 B is the present invention looks up structural representation of the encapsulating structure for the ball grid array that first embodiment of the invention provides；
Fig. 5 A is that structural schematic diagram is cutd open in the side of the encapsulating structure for the ball grid array that first embodiment of the invention provides；
Fig. 5 B is the present invention looks up structural representation of the encapsulating structure for the ball grid array that first embodiment of the invention provides；
Fig. 6 A is that structural schematic diagram is cutd open in the side of the encapsulating structure for the ball grid array that second embodiment of the invention provides；
Fig. 6 B is the present invention looks up structural representation of the encapsulating structure for the ball grid array that second embodiment of the invention provides；
Fig. 7 A is that structural schematic diagram is cutd open in the side of the encapsulating structure for the ball grid array that third embodiment of the invention provides；
Fig. 7 B is the present invention looks up structural representation of the encapsulating structure for the ball grid array that third embodiment of the invention provides；
Fig. 8 A is that structural schematic diagram is cutd open in the side of the encapsulating structure for the ball grid array that four embodiment of the invention provides；
Fig. 8 B is the present invention looks up structural representation of the encapsulating structure for the ball grid array that four embodiment of the invention provides；
Fig. 9 A is that structural schematic diagram is cutd open in the side of the encapsulating structure for the ball grid array that fifth embodiment of the invention provides；
Fig. 9 B is the present invention looks up structural representation of the encapsulating structure for the ball grid array that fifth embodiment of the invention provides；
Figure 10 A is that structural schematic diagram is cutd open in the side of the encapsulating structure for the ball grid array that sixth embodiment of the invention provides；
Figure 10 B is the present invention looks up structural representation of the encapsulating structure for the ball grid array that sixth embodiment of the invention provides；
Figure 11 A is that structural schematic diagram is cutd open in the side of the encapsulating structure for the ball grid array that seventh embodiment of the invention provides；
Figure 11 B is the present invention looks up structural representation of the encapsulating structure for the ball grid array that seventh embodiment of the invention provides；
Figure 12 A is that structural schematic diagram is cutd open in the side of the encapsulating structure for the ball grid array that eighth embodiment of the invention provides；
Figure 12 B is the present invention looks up structural representation of the encapsulating structure for the ball grid array that eighth embodiment of the invention provides.
Specific embodiment
Below with reference to embodiment shown in the drawings, the present invention will be described in detail.But these embodiments are not intended to limit this
Invention, the transformation in structure or function that those skilled in the art are made according to these embodiments are all contained in this hair
In bright protection scope.
Join shown in Fig. 1, first embodiment of the invention provides a kind of packaging method of ball grid array, the packaging method packet
It includes：S1, a substrate is provided, a side surface of the substrate at least has first area and second area for soldered ball to be arranged.
In the specific embodiment of the invention, before being implanted into soldered ball, delimited at least below substrate according to the function of soldered ball
Two welding regions；The welding region includes：Soldered ball is for electrically transmitting and the first area of heat transfer and substrate lower section
Remove the second area other than first area.
The encapsulating structure of ball grid array generally includes：Substrate, the component being set to above the substrate, for encapsulating
State the soldered ball below the plastic packaging material of component, and the implantation substrate；According to the concrete application of the encapsulating structure of ball grid array
Environment, being set to the component above the substrate mainly includes：Functional chip and passive device, the functional chip are active
Electronic component, it would be desirable to be able to the source of amount and realize its specific function, be generally used to amplification, conversion of signal etc.；It is described passive
Device is under conditions of not needing additional power source, so that it may show the electronic component of its characteristic, mainly resistance class, inductor
With capacitance kind device, their common feature be in circuit without power up can the work when there is signal, such as：Resistance,
Capacitor, inductance, converter, taper, matching network, resonator, filter, frequency mixer and switch etc..
Correspondingly, different according to the component type being implanted into above substrate, corresponding each component is implanted in below substrate
Soldered ball function it is also different.Specifically, the soldered ball that corresponding function chip area is implanted into below substrate, is mainly used for
Electrically transmission and heat transfer；The soldered ball that passive device region implantation is corresponded to below substrate, is mainly used for electrical transmission.
Further, the method also includes：S2, the welding region is divided below substrate according to the function of soldered ball
It is two comprising：Soldered ball removes other than first area for electrically transmitting with below the first area of heat transfer and substrate
Second area.According in specific embodiment achieved by the preferred embodiment, can be encapsulated according to above counterpart substrate
The type of component delimit at least two welding regions below substrate；The region of corresponding function chip is first i.e. below substrate
Region, the region of the corresponding passive device in substrate lower section and other region divisions for needing to weld soldered ball are second area.
The soldered ball that the present invention refers to has multiple types, and each type of soldered ball has different parameters, the parameter master
Including：Heat-conductive characteristic, thermal expansion coefficient and size, in other embodiments of the invention, the parameter is also possible to relate to
And electric conductivity.Preferably, in the specific embodiment of the invention, by changing electric-conductivity heat-conductivity high tenor in soldered ball, changing
Megohmite insulant content promotes or reduces its heat-conductive characteristic in soldered ball；Further, the difference of the invention according to each autoregressive parameter
Three classes are classified as, are respectively metal soldered ball, resin soldered ball and full soldering ball；The metal soldered ball includes：First kernel
And the first outer core of the first kernel of cladding, first kernel is the metal material that heating conduction and fusing point are above tin, described
First outer core is tin material；Constitute the metal of first kernel for example：Copper；The resin soldered ball includes：Second kernel and packet
The second outer core of the second kernel is covered, second kernel is resin material, and second outer core is tin material；Constitute described second
The resin of kernel is high-molecular compound, such as：Phenolic resin, polyester resin etc.；The full soldering ball is that traditional tin system is welded
Ball, composition material are tin.The metal soldered ball of identical size, resin soldered ball and full soldering ball, the metal soldered ball are led
Hot property is best, and the heating conduction of the resin soldered ball is minimum, and the thermal expansion coefficient of the metal soldered ball is maximum, the resin weldering
The thermal expansion coefficient of ball is minimum, i.e., the thermal expansion coefficient of the described full soldering ball is higher than the thermal expansion coefficient of the resin soldered ball, low
In the thermal expansion coefficient of the metal soldered ball, in this way, the shear stress of the generation of resin soldered ball is most under the conditions of expanding with heat and contract with cold
It is small.
In a preferred embodiment of the invention, the first area corresponding function chip is soldered in the first area
Few first soldered ball, welds at least one second soldered ball in the second area, wherein first soldered ball and described second
An at least parameter for soldered ball is different, and the parameter includes heat-conductive characteristic and size；First soldered ball has the first heat transfer
Performance, second soldered ball have the second heat-conductive characteristic, and first heat-conductive characteristic is greater than second heat-conductive characteristic.
Further, in an embodiment of the present invention, first soldered ball has first size, and second soldered ball has
Second size, the first size are equal to second size.Specifically, first soldered ball be metal soldered ball, described second
It is full soldering ball that soldered ball, which is resin soldered ball or full soldering ball at least one or first soldered ball, and second soldered ball is
Resin soldered ball；Certainly, in other embodiments of the invention, first soldered ball is metal soldered ball, and second soldered ball is also
It can be resin soldered ball and full soldering ball, the thermal expansion coefficient of the full soldering ball is higher than the coefficient of expansion of the resin soldered ball, and
Lower than the coefficient of expansion of the metal soldered ball, do not continue to repeat herein.
Further, in the preferred embodiment for the present invention, to avoid the soldered ball in corner areas below substrate in external force
Under the influence of cause its pad be broken, second embodiment of the invention provide ball grid array packaging method, above-mentioned first
On the basis of the packaging method for the ball grid array that embodiment provides, a side surface of the substrate also has for soldered ball to be arranged
Third region；At least one third soldered ball is welded in the third region, wherein the third soldered ball and second soldered ball
An at least parameter it is different, the parameter includes heat-conductive characteristic, thermal expansion coefficient and size.
The present invention can be achieved in embodiment, and the third region exists or the independently of first area and second area
Three regions are a part of second area.
In second embodiment of the invention, as shown in connection with fig. 2, the packaging method of the ball grid array is specifically included：M1, it mentions
For a substrate, a side surface of the substrate at least has first area, second area and third region for soldered ball to be arranged；
M2, at least one first soldered ball is welded in the first area, at least one second soldered ball is welded in the second area, in institute
It states third region and welds at least one third soldered ball, wherein first soldered ball, second soldered ball, the third soldered ball are extremely
A few parameter is different, and the parameter includes heat-conductive characteristic, thermal expansion coefficient and size.
Preferably, the first area corresponding function chip, at least one corner of third region counterpart substrate；Institute
The first soldered ball is stated with the first heat-conductive characteristic and first size, second soldered ball has the second heat-conductive characteristic and the second ruler
Very little, the third soldered ball has third heat-conductive characteristic and third size, and first heat-conductive characteristic is greater than second heat
Conductive performance, the first size are equal to second size and are less than the third size.
Correspondingly, the soldered ball in the third region uses large scale soldered ball, reinforce soldered ball and substrate, soldered ball and printed wire
Contact area between plate reinforces solder bond intensity, under the influence of avoiding external force, such as：Fall, collide cause weld point off
It splits.
Specifically, the present invention can be achieved in mode, first soldered ball is metal soldered ball, and second soldered ball is resin weldering
Ball or full soldering ball at least one, the third soldered ball is resin soldered ball；Or first soldered ball is metal soldered ball, it is described
Second soldered ball be resin soldered ball or full soldering ball at least one, the third soldered ball is full soldering ball；Or first weldering
Ball is full soldering ball, and second soldered ball is resin soldered ball, the third soldered ball be resin soldered ball or full soldering ball at least within
One of, the thermal expansion coefficient of the full soldering ball is higher than the coefficient of expansion of the resin soldered ball, and lower than the metal soldered ball
The coefficient of expansion.
In conjunction with shown in Fig. 3 to 12B, in order to make it easy to understand, 9 kinds encapsulated out with the packaging method by above-mentioned ball grid array
It is illustrated for the encapsulating structure of ball grid array, in the example, exhaustion is not carried out to all implementations, but by upper
The combination for stating verbal description and the description of following specific examples, can derive other encapsulating structures, not do continue to repeat herein.
In conjunction with Fig. 3, Fig. 4 A, 4B, 5A, 5B, Fig. 6 A, 6B, shown, provided for the first, second, third embodiment of the present invention
Ball grid array encapsulating structure；The encapsulating structure of the ball grid array includes：Substrate 10 is set to 10 top of substrate
Component 30, for encapsulating the plastic packaging material 50 of the component, and the soldered ball 70 of implantation 10 lower section of substrate；The soldered ball
70 include different the first soldered balls and the second soldered ball of an at least parameter, the parameter include heat-conductive characteristic, thermal expansion coefficient and
Size；10 lower surface of substrate at least has first area 91 for being implanted into the first soldered ball and for being implanted into the second soldered ball
Second area 93；The component 30 includes：Functional chip 31 and passive device 33；Under the substrate of the corresponding functional chip 31
Side is first area 91, and first soldered ball has the first heat-conductive characteristic and first size, and second soldered ball has second
Heat-conductive characteristic and the second size, first heat-conductive characteristic are greater than second heat-conductive characteristic；Described first size etc.
In second size.
As shown in 4A, 4B, in the encapsulating structure that first embodiment of the invention provides, first soldered ball is metal soldered ball
71, second soldered ball is resin soldered ball 73.The metal soldered ball 71 includes：The first kernel 711 of first kernel 711 and cladding
First outer core 713, first kernel 711 are the metal material that heating conduction and fusing point are above tin, first outer core 713
For tin material；Constitute the metal of first kernel 711 for example：Copper；The resin soldered ball 73 includes：Second kernel 731 and packet
The second outer core 733 of the second kernel 731 is covered, second kernel 731 is resin material, and second outer core 733 is tin material；
The resin for constituting second kernel 733 is high-molecular compound, such as：Phenolic resin, polyester resin etc.；The metal soldered ball
71 thermal expansion coefficient is higher than the thermal expansion coefficient of the resin soldered ball 73.
As shown in Fig. 5 A, 5B, in the encapsulating structure that first embodiment of the invention provides, first soldered ball is metal welding
Ball 71, second soldered ball are full soldering ball 75；The full soldering ball 75 is traditional tin soldered ball, and composition material is tin,
The thermal expansion coefficient of the full soldering ball 75 is lower than the thermal expansion coefficient of the metal soldered ball 71.
As shown in Fig. 6 A, 6B, in the encapsulating structure that third embodiment of the invention provides, first soldered ball is full soldering
Ball 75, second soldered ball are resin soldered ball 73；The thermal expansion coefficient of the resin soldered ball 73 is lower than the full soldering ball 75
Thermal expansion coefficient.
The encapsulating structure for the ball grid array that first, second, third embodiment of the invention provides, is not changing size of solder ball
In the case where, the higher soldered ball of heat-conductive characteristic is implanted into promote the capacity of heat transmission of first area, second in first area
Region be implanted into the lower soldered ball of heat-conductive characteristic thermal expansion coefficient with reduce expand with heat and contract with cold under the conditions of the shear stress that generates, avoid
Shear stress causes the fracture of solder ball joints.
It is this hair in conjunction with Fig. 3, Fig. 7 A, 7B, 8A, 8B, 9A, 9B, 10A, 10B, 11A, 11B, Figure 12 A, 12B, shown
Bright fourth, fifth, six, seven, eight, nine, ten, 11,12 embodiments provide ball grid array encapsulating structure；6 kinds of modes
The difference of the more above-mentioned three kinds of encapsulating structures of the encapsulating structure of offer is that the lower surface of the substrate also has for soldered ball to be arranged
Third region 95；The soldered ball further includes a third soldered ball, wherein at least the one of the third soldered ball and second soldered ball
Parameter is different, and the parameter includes heat-conductive characteristic, thermal expansion coefficient and size.In the specific embodiment, the ball bar battle array
The encapsulating structure of column includes：Substrate 10 is set to the component 30 of 10 top of substrate, for encapsulating the modeling of the component
Envelope material 50, and the soldered ball 70 of implantation 10 lower section of substrate；The soldered ball 70 include different the first soldered ball of an at least parameter,
Second soldered ball and third soldered ball, the parameter include heat-conductive characteristic, thermal expansion coefficient and size；10 lower surface of substrate is extremely
It is few to there is the first area 91 for being implanted into the first soldered ball, the second area 93 for being implanted into the second soldered ball, for being implanted into third
The third region 95 of soldered ball；The component 30 includes：Functional chip 31 and passive device 33；The corresponding functional chip 31
It is first area 91 below substrate 10, at least one corner of 10 lower section of counterpart substrate is third region 95,10 lower section of substrate
Remaining area is second area 93；First soldered ball has the first heat-conductive characteristic and first size, the second soldered ball tool
There are the second heat-conductive characteristic and the second size, the third soldered ball has third heat-conductive characteristic and the second size, and described first
Heat-conductive characteristic is greater than second heat-conductive characteristic；The first size is equal to second size and is less than the third ruler
It is very little.
As shown in Fig. 7 A, 7B, in the encapsulating structure that four embodiment of the invention provides, first soldered ball is metal welding
Ball 71, second soldered ball, the third soldered ball are resin soldered ball 73, and the thermal expansion coefficient of the resin soldered ball 73 is lower than institute
State the thermal expansion coefficient of metal soldered ball 71.
As shown in Fig. 8 A, 8B, in the encapsulating structure that fifth embodiment of the invention provides, first soldered ball is metal welding
Ball 71, second soldered ball, the third soldered ball are full soldering ball 75, and the thermal expansion coefficient of the full soldering ball 75 is lower than institute
State the thermal expansion coefficient of metal soldered ball 71.
Shown as shown in Fig. 9 A, 9B, in the encapsulating structure that sixth embodiment of the invention provides, first soldered ball is
Metal soldered ball 71, second soldered ball are resin soldered ball 73, and the third soldered ball is full soldering ball 75, and the heat of the full tin 75 is swollen
Swollen coefficient is higher than the thermal expansion coefficient of the resin soldered ball 73, and is lower than the thermal expansion coefficient of the metal soldered ball 71.
As shown in Figure 10 A, 10B, in the encapsulating structure that seventh embodiment of the invention provides, first soldered ball is metal
Soldered ball 71, second soldered ball are full soldering ball 75, and the third soldered ball is resin soldered ball 73, the thermal expansion system of the full tin 75
Number is higher than the thermal expansion coefficient of the resin soldered ball 73, and is lower than the thermal expansion coefficient of the metal soldered ball 71.
Fourth, fifth, six, seven embodiment delimit the first area of corresponding function chip, corresponding corner below substrate
Third region, and in first area implanted metal soldered ball, with by increase the highly conductive high-thermal conductive metal content in soldered ball with
Promote the capacity of heat transmission of first area；It is lower than the soldered ball of metal soldered ball in second area implantation thermal expansion coefficient, to reduce
Under the conditions of expanding with heat and contract with cold, shear stress between soldered ball and substrate avoids shear stress from causing the fracture of solder ball joints；In third
Region is implanted into large-sized soldered ball, reinforces the contact area between soldered ball and substrate, soldered ball and printed wiring board, reinforces welding knot
Intensity is closed, avoids causing pad to be broken under the influence of external force.
As shown in Figure 11 A, 11B, in the encapsulating structure that eighth embodiment of the invention provides, first soldered ball is full tin
Soldered ball 75, second soldered ball and the third soldered ball are resin soldered ball 73, and the thermal expansion coefficient of the resin soldered ball 73 is low
In the thermal expansion coefficient of the full soldering ball 75.
As shown in Figure 12 A, 12B, in the encapsulating structure that ninth embodiment of the invention provides, first soldered ball is full tin
Soldered ball 75, second soldered ball are resin soldered ball 73, and the third soldered ball is full soldering ball 75, the thermal expansion system of the full tin 75
Number is higher than the thermal expansion coefficient of the resin soldered ball 73.
The encapsulating structure for the ball grid array that eight, the nine embodiments of the invention provide, delimit 3 welding sections below substrate
Domain is followed successively by：The first area of corresponding function chip below substrate, the third region and substrate lower section of corresponding corner remove
Second area outside first area and third region is implanted into large-sized soldered ball in third region, reinforces soldered ball and substrate, weldering
Contact area between ball and printed wiring board reinforces solder bond intensity, avoids causing pad to be broken under the influence of external force；?
Second area is implanted into resin soldered ball to reduce the amount of metal of soldered ball, reduces the thermal expansion coefficient of soldered ball, can also so reduce heat
The shear stress generated under the conditions of swollen shrinkage avoids shear stress from causing the fracture of solder ball joints.
In conclusion the encapsulating structure and its packaging method of ball grid array of the invention, according to the function of soldered ball or first device
The type of part delimit multiple welding regions below substrate, and then can be implanted into according to the demand of each welding region different types of
Soldered ball；To promote the overall performance of the encapsulating structure of ball grid array.
It should be appreciated that although this specification is described in terms of embodiments, but not each embodiment only includes one
A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say
As a whole, the technical solution in each embodiment may also be suitably combined to form those skilled in the art can for bright book
With the other embodiments of understanding.
The series of detailed descriptions listed above only for feasible embodiment of the invention specifically
Protection scope bright, that they are not intended to limit the invention, it is all without departing from equivalent implementations made by technical spirit of the present invention
Or change should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of packaging method of ball grid array, which is characterized in that the packaging method includes：
A substrate is provided, a side surface of the substrate at least has first area and second area for soldered ball to be arranged；
At least one first soldered ball is welded in the first area, welds at least one second soldered ball in the second area,
In, first soldered ball is different from an at least parameter for second soldered ball, the parameter include heat-conductive characteristic, thermal expansion
Coefficient and size.
2. the packaging method of ball grid array according to claim 1, which is characterized in that the first area corresponding function core
Piece, first soldered ball have the first heat-conductive characteristic, and second soldered ball has the second heat-conductive characteristic, and first heat passes
Performance is led greater than second heat-conductive characteristic.
3. according to the packaging method of ball grid array described in right 2, which is characterized in that first soldered ball is metal soldered ball, institute
State the second soldered ball be resin soldered ball or full soldering ball at least one, first soldered ball has a first size, described second
Soldered ball has the second size, and the first size is equal to second size；
The metal soldered ball includes：First kernel and the first outer core for coating the first kernel, first kernel are heating conduction
And fusing point is above the metal material of tin, first outer core is tin material；The resin soldered ball includes：Second kernel and cladding
Second outer core of the second kernel, second kernel are resin material, and second outer core is tin material；The full soldering ball
Material is tin；The coefficient of expansion of the resin soldered ball is lower than the coefficient of expansion of the metal soldered ball；The expansion of the full soldering ball
Coefficient is lower than the coefficient of expansion of the metal soldered ball.
4. according to the packaging method of ball grid array described in right 2, which is characterized in that first soldered ball is full soldering ball, institute
Stating the second soldered ball includes resin soldered ball, and first soldered ball has first size, and second soldered ball has the second size, described
First size is equal to second size；
The resin soldered ball includes：Second kernel and the second outer core for coating the second kernel, second kernel are resin material,
Second outer core is tin material；The material of the full soldering ball is tin；The thermal expansion coefficient of the resin soldered ball is lower than described
The coefficient of expansion of full soldering ball.
5. according to the packaging method of ball grid array described in right 4, which is characterized in that second soldered ball further includes full soldering
Ball.
6. a kind of encapsulating structure of ball grid array, the encapsulating structure include：Substrate is set to first device of the upper surface of base plate
Part, for encapsulating the soldered ball below the plastic packaging material of the component, and the implantation substrate；
It is characterized in that, the soldered ball includes different the first soldered ball and the second soldered ball of an at least parameter, the parameter includes heat
Conductive performance, thermal expansion coefficient and size；
The base lower surface at least has the first area for being implanted into the first soldered ball and second for being implanted into the second soldered ball
Region.
7. the encapsulating structure of ball grid array according to claim 6, which is characterized in that the component includes function core
Piece, is first area below the substrate of the corresponding functional chip, and first soldered ball has the first heat-conductive characteristic, described the
Two soldered balls have the second heat-conductive characteristic, and first heat-conductive characteristic is greater than second heat-conductive characteristic.
8. the encapsulating structure of ball grid array according to claim 7, which is characterized in that first soldered ball is metal welding
Ball, second soldered ball be resin soldered ball or full soldering ball at least one, first soldered ball has first size, described
Second soldered ball has the second size, and the first size is equal to second size；
The metal soldered ball includes：First kernel and the first outer core for coating the first kernel, first kernel are heating conduction
And fusing point is above the metal material of tin, first outer core is tin material；The resin soldered ball includes：Second kernel and cladding
Second outer core of the second kernel, second kernel are resin material, and second outer core is tin material；The full soldering ball
Material is tin；The coefficient of expansion of the resin soldered ball is lower than the coefficient of expansion of the metal soldered ball；The expansion of the full soldering ball
Coefficient is lower than the coefficient of expansion of the metal soldered ball.
9. according to the encapsulating structure of ball grid array described in right 7, which is characterized in that first soldered ball is full soldering ball, institute
Stating the second soldered ball includes resin soldered ball, and first soldered ball has first size, and second soldered ball has the second size, described
First size is equal to second size；
The resin soldered ball includes：Second kernel and the second outer core for coating the second kernel, second kernel are resin material,
Second outer core is tin material；The material of the full soldering ball is tin；The coefficient of expansion of the resin soldered ball is complete lower than described
The coefficient of expansion of soldering ball.
10. according to the encapsulating structure of ball grid array described in right 9, which is characterized in that second soldered ball further includes full soldering
Ball.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2020007067A1 (en) * | 2018-07-06 | 2020-01-09 | 江苏长电科技股份有限公司 | Packaging structure of ball grid array of packaging method thereof |
| CN111128769A (en) * | 2019-11-29 | 2020-05-08 | 中国电子科技集团公司第十三研究所 | Ball mounting structure and ball mounting method for ball grid array package |
| US20220406695A1 (en) * | 2021-06-22 | 2022-12-22 | Western Digital Technologies, Inc. | Semiconductor device package having a ball grid array with multiple solder ball materials |
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| CN103779302A (en) * | 2012-10-25 | 2014-05-07 | 飞思卡尔半导体公司 | A packaged integrated circuit having large solder pads and method for forming |
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| US6350669B1 (en) * | 2000-10-30 | 2002-02-26 | Siliconware Precision Industries Co., Ltd. | Method of bonding ball grid array package to circuit board without causing package collapse |
| CN103367302A (en) * | 2012-04-09 | 2013-10-23 | 横河电机株式会社 | Substrate device |
| CN103779302A (en) * | 2012-10-25 | 2014-05-07 | 飞思卡尔半导体公司 | A packaged integrated circuit having large solder pads and method for forming |
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| WO2020007067A1 (en) * | 2018-07-06 | 2020-01-09 | 江苏长电科技股份有限公司 | Packaging structure of ball grid array of packaging method thereof |
| CN111128769A (en) * | 2019-11-29 | 2020-05-08 | 中国电子科技集团公司第十三研究所 | Ball mounting structure and ball mounting method for ball grid array package |
| US20220406695A1 (en) * | 2021-06-22 | 2022-12-22 | Western Digital Technologies, Inc. | Semiconductor device package having a ball grid array with multiple solder ball materials |
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| CN108899283B (en) | 2021-05-07 |
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