CN117174682B - PQFN packaged DC-DC converter and manufacturing method thereof - Google Patents
PQFN packaged DC-DC converter and manufacturing method thereof Download PDFInfo
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- CN117174682B CN117174682B CN202311449277.8A CN202311449277A CN117174682B CN 117174682 B CN117174682 B CN 117174682B CN 202311449277 A CN202311449277 A CN 202311449277A CN 117174682 B CN117174682 B CN 117174682B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000919 ceramic Substances 0.000 claims abstract description 158
- 239000000758 substrate Substances 0.000 claims abstract description 143
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 7
- 230000005669 field effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 239000003990 capacitor Substances 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000004033 plastic Substances 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 10
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 3
- 230000008093 supporting effect Effects 0.000 description 11
- 230000008569 process Effects 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004146 energy storage Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000008719 thickening Effects 0.000 description 3
- 241001391944 Commicarpus scandens Species 0.000 description 2
- 206010040844 Skin exfoliation Diseases 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000004021 metal welding Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The application discloses a DC-DC converter packaged by PQFN and a manufacturing method thereof, and relates to the technical field of integrated circuit modules. The DC-DC converter comprises a lead frame and a multilayer ceramic substrate arranged on the lead frame, wherein a laminated power inductor is formed in the multilayer ceramic substrate, a power device connected with the laminated power inductor is arranged on one side, away from the lead frame, of the multilayer ceramic substrate to form a DC-DC conversion circuit, and the orthographic projection area of the lead frame overlapped with the multilayer ceramic substrate is larger than 50% of the area of the multilayer ceramic substrate. By adopting the mode, the mechanical strength of a product can be improved for the large-size soft magnetic ferrite multilayer ceramic-based DC-DC converter, and the exposed lead metal at the bottom and the periphery can also enhance the heat dissipation performance, so that the applicability of the DC-DC converter is improved.
Description
Technical Field
The application relates to the technical field of integrated circuit modules, in particular to a DC-DC converter packaged by PQFN and a manufacturing method thereof.
Background
The DC-DC converter is a voltage converter which converts input voltage and effectively outputs fixed voltage, and is widely applied to products such as optical communication, SSD solid state disk, video image processing system, industrial automation, data center, artificial intelligence, internet of things, satellite communication and the like. In the using process of the DC-DC converter, the energy storage characteristics of a capacitor and an inductor are utilized, the high-frequency switch is operated through a controllable switch (MOSFET and the like), the input electric energy is stored in the capacitor or the inductor, and when the switch is disconnected, the electric energy is released to a load to provide energy.
Conventionally, patent 202220856498.1 has been disclosed in which a semiconductor element and other electronic components are mounted on a multilayer ceramic substrate, and these electronic components are mutually wired to realize modularization. The multilayer ceramic substrate is provided with a plurality of laminated ceramic insulator layers and wiring conductors of various forms so as to connect each electronic component mounted on the multilayer ceramic substrate in order, thereby achieving the required voltage conversion requirement.
In practical application, because the brittleness of the ceramic material is high, the ceramic substrate is suitable for the small-sized DC-DC converter, if the product size is high, the thickness is thin, and the ceramic substrate is limited by the brittleness of the ceramic material, so that the ceramic substrate is not high in mechanical strength and is easy to break, and the small-sized DC-DC converter is concentrated in heat generation, so that the heat dissipation effect is influenced, and the applicability of the DC-DC converter is not improved.
Disclosure of Invention
The purpose of the application is to provide a PQFN packaged DC-DC converter and a manufacturing method thereof, which can improve the mechanical strength of a product for a large-size soft magnetic ferrite multilayer ceramic-based DC-DC converter, lead wires exposed at the bottom and the periphery can also enhance the heat dissipation performance, and further improve the applicability of the DC-DC converter.
Embodiments of the present application are implemented as follows:
in one aspect of the embodiments of the present application, a DC-DC converter of a PQFN package is provided, including a lead frame, and a multilayer ceramic substrate disposed on the lead frame, a laminated power inductor is formed in the multilayer ceramic substrate, a power device connected to the laminated power inductor is disposed on a side of the multilayer ceramic substrate facing away from the lead frame, so as to form a DC-DC conversion circuit, where a orthographic projection area of the lead frame overlapping with the multilayer ceramic substrate is greater than 50% of an area of the multilayer ceramic substrate.
Optionally, a plurality of first pins are disposed on the lead frame, a plurality of second pins are disposed on the multilayer ceramic substrate, the first pins are connected with the second pins in a one-to-one correspondence manner, and orthographic projections of the first pins and the second pins on the lead frame coincide.
Optionally, each group of the first pin and the second pin are connected through metal welding.
Optionally, the power device includes a resistor, a capacitor, an IC chip, and a field effect transistor.
Optionally, a heat conducting post is penetratingly arranged on the multilayer ceramic substrate, and the heat conducting post is connected between the field effect transistor and the lead frame.
Optionally, the thickness of the leadframe is greater than or equal to 0.203mm.
Optionally, the multilayer ceramic substrate includes a plurality of ceramic substrates stacked, each ceramic substrate having a conductive pattern disposed thereon, and the conductive patterns on adjacent ceramic substrates have overlapping regions.
Optionally, the ceramic matrix is a soft magnetic ferrite ceramic.
Optionally, the periphery of the lead frame, the multilayer ceramic substrate and the power device is integrally encapsulated with epoxy resin.
Optionally, the lead frame includes a rectangular frame body, and a plurality of supporting ribs disposed in the rectangular frame body, and a part of the first lead pins are disposed on the supporting ribs.
In another aspect of the embodiments of the present application, a method for manufacturing a PQFN-packaged DC-DC converter is provided, the method comprising:
manufacturing a lead frame, wherein the lead frame comprises a plurality of first lead-out pins;
manufacturing a multilayer ceramic substrate, wherein a laminated power inductor is formed in the multilayer ceramic substrate, and a plurality of second pins corresponding to the plurality of first pins are arranged at the bottom of the multilayer ceramic substrate;
a power device is mounted on the top of the multilayer ceramic substrate, and a DC-DC conversion circuit is formed together with the internal coil of the multilayer ceramic substrate and the first lead-out pin at the bottom of the multilayer ceramic substrate;
the first lead pin and the second lead pin are welded through metal so as to enable the multilayer ceramic substrate to be connected with the lead frame, wherein the orthographic projection area of the lead frame overlapped with the multilayer ceramic substrate is larger than 50% of the area of the multilayer ceramic substrate;
performing plastic package on the multilayer ceramic substrate and the lead frame;
and cutting along the outer ring of the multilayer ceramic substrate to obtain a single DC-DC converter.
The beneficial effects of the embodiment of the application include:
according to the DC-DC converter packaged by the PQFN and the manufacturing method thereof, the supporting structure of the DC-DC converter is formed by the lead frame and the multilayer ceramic substrate arranged on the lead frame. Meanwhile, by the laminated power inductor formed in the multilayer ceramic substrate and the power device mounted on the multilayer ceramic substrate, the respective components are connected to form a corresponding DC-DC conversion circuit. In the use process of the DC-DC converter, as the orthographic projection area of the lead frame overlapped with the multilayer ceramic substrate is larger than 50% of the area of the multilayer ceramic substrate, the lead frame has a good supporting effect on the multilayer ceramic substrate, the supporting strength of the multilayer ceramic substrate is improved, the size of the product can be increased without thickening the multilayer ceramic substrate to ensure the mechanical strength of the multilayer ceramic substrate, the heat dissipation performance can be enhanced, and the applicability of the DC-DC converter is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a DC-DC converter according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a lead frame according to an embodiment of the present application;
fig. 3 is a schematic bottom view of a DC-DC converter according to an embodiment of the present disclosure;
FIG. 4 is an exploded view of a multilayer ceramic substrate provided in an embodiment of the present application;
fig. 5 is a schematic diagram of a manufacturing flow of a DC-DC converter according to an embodiment of the present application.
Icon: a 100-DC-DC converter; 110-a lead frame; 112-first pin; 114-a rectangular frame; 116-supporting ribs; 120-a multilayer ceramic substrate; 122-a ceramic matrix; 124-a second pin; 130-power devices; 140-a housing.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present application, it should be noted that, the azimuth or positional relationship indicated by the terms "inner", "outer", etc. are based on the azimuth or positional relationship shown in the drawings, or the azimuth or positional relationship that is commonly put when the product of the application is used, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element to be referred to must have a specific azimuth, be configured and operated in a specific azimuth, and therefore should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the description of the present application, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
The ceramic substrate is suitable for the DC-DC converter with small size, if the size of the product is large, the thickness is thin, the ceramic substrate is limited by brittleness of ceramic materials, the ceramic substrate is not strong enough in mechanical strength and is easy to break, and the DC-DC converter with small size is concentrated in heat generation and affects the heat dissipation effect.
Referring to fig. 1, the embodiment provides a DC-DC converter 100 of a PQFN package, which includes a lead frame 110, and a multilayer ceramic substrate 120 disposed on the lead frame 110, wherein a laminated power inductor is formed in the multilayer ceramic substrate 120, and a power device 130 connected to the laminated power inductor is disposed on a side of the multilayer ceramic substrate 120 facing away from the lead frame 110, so as to form a DC-DC conversion circuit, wherein a orthographic projection area of the lead frame 110 overlapping with the multilayer ceramic substrate 120 is greater than 50% of an area of the multilayer ceramic substrate 120.
Specifically, the lead frame 110 is generally made of metal, has a certain strength and toughness, and can play a supporting role for the multilayer ceramic substrate 120. When the multilayer ceramic substrate 120 and the lead frame 110 are combined, the orthographic projection area of the lead frame 110 and the multilayer ceramic substrate 120 overlapped with each other is set to be more than 50% of the area of the multilayer ceramic substrate 120, so that the multilayer ceramic substrate 120 can be strongly supported, and the problem of fracture caused by the thinness of the multilayer ceramic substrate 120 when the multilayer ceramic substrate 120 is affected by external force is avoided.
The multilayer ceramic substrate 120 is in a form that facilitates formation of a desired laminated power inductor within the multilayer ceramic substrate 120 to cooperate with the power device 130 to form a desired DC-DC conversion circuit. The power device 130 in the embodiment of the present application is a generic term for electronic components required for forming the DC-DC conversion circuit, and is not a single component. In addition, the DC-DC conversion circuit in the embodiment of the present application takes a conventional circuit form, except that the circuit wiring and the inductor are integrated in the multilayer ceramic substrate 120.
The DC-DC converter 100 provided in the embodiment of the present application forms a support structure for the DC-DC converter 100 by the lead frame 110, and the multilayer ceramic substrate 120 provided on the lead frame 110. Meanwhile, through the laminated power inductor formed in the multilayer ceramic substrate 120 and the power device 130 mounted on the multilayer ceramic substrate 120, the respective components are connected to form a corresponding DC-DC conversion circuit. In the use process of the DC-DC converter 100, since the orthographic projection area of the lead frame 110 overlapped with the multilayer ceramic substrate 120 is greater than 50% of the area of the multilayer ceramic substrate 120, the lead frame 110 has a good supporting effect on the multilayer ceramic substrate 120, so that the supporting strength of the multilayer ceramic substrate 120 is improved, the size of the product can be increased without thickening the multilayer ceramic substrate 120 to ensure the mechanical strength of the multilayer ceramic substrate 120, and when in use, the exposed lead metal at the bottom and the periphery can also enhance the heat dissipation performance and improve the applicability of the DC-DC converter.
As shown in fig. 2 and 3, the lead frame 110 is provided with a plurality of first pins 112, the multilayer ceramic substrate 120 is provided with a plurality of second pins 124, the first pins 112 are connected with the second pins 124 in a one-to-one correspondence manner, and orthographic projections of the first pins 112 and the second pins 124 on the lead frame 110 are overlapped.
Specifically, by disposing the first lead 112 on the leadframe 110 and disposing the second lead 124 on the multilayer ceramic substrate 120, when the first and second leads 112 and 124 are stacked in a one-to-one correspondence, the overall structural strength can be improved, and the risk of peeling off the leads due to the LGA package form can be reduced. In addition, the orthographic projection of the first lead-out pin 112 and the second lead-out pin 124 on the lead frame 110 are overlapped, the first lead-out pin 112 and the second lead-out pin 124 can be directly welded and connected, the second lead-out pin 124 is electrically connected with the power device at the top through the inner coil of the multilayer ceramic substrate to form a circuit, the whole structure is not required to be connected by virtue of bonding wires, the design of the lead frame can be simplified, the connection wiring difficulty is reduced, and the convenience and the connection efficiency in connection are improved.
Further, each set of the first lead-out pins 112 and the second lead-out pins 124 are connected by metal welding. By adopting the mode, the first leading-out pin 112 and the second leading-out pin 124 can be firmly connected, meanwhile, the area of a bonding pad of the DC-DC converter can be increased, the strength of the leading-out pin is enhanced, the hidden danger of stripping of the leading-out pin is reduced, and the heat dissipation and the reliability are improved. The metal used for the welding may be silver.
In an alternative embodiment of the present application, power device 130 includes a resistor, a capacitor, an IC chip, and a field effect transistor.
The DC-DC conversion circuit (e.g., an inductive energy storage type conversion circuit) formed by the DC-DC converter 100 uses the energy storage characteristics of the capacitor and the inductor to perform the high frequency switching operation by the field effect transistor, stores the input electric energy in the capacitor or the inductor, and releases the electric energy to the load to provide energy when the switch is turned off. The resistor can then act to distribute the voltage so that the output voltage meets the requirements. Wherein the power or voltage output capability is related to the switch on-time and the cycle ratio of the whole switch, i.e. to the duty cycle.
As shown in fig. 3, the multilayer ceramic substrate 120 includes a plurality of ceramic substrates 122 stacked and disposed, each ceramic substrate 122 having a conductive pattern disposed thereon, the conductive patterns on adjacent ceramic substrates 122 having an overlapping region.
Specifically, by disposing the conductive patterns on each ceramic substrate 122, when the adjacent ceramic substrates 122 are stacked, a matching form of the stacked power inductor can be realized, and the corresponding coupling coefficient is changed according to the number of the ceramic substrates 122, so that customized parameter adjustment is realized, and personalized requirements are satisfied. The conductive pattern may be formed on the surface of the ceramic base 122 by printing a conductive paste by, for example, screen printing or gravure printing or transferring a metal foil having a predetermined pattern, and at this time, it is necessary to communicate the conductive patterns of the upper and lower surfaces of the ceramic base 122 at corresponding positions according to actual conditions. The conductive pattern may also be embedded directly within the ceramic matrix 122 to achieve the desired electrical connection.
The number of the ceramic substrates 122 is not particularly limited, and may be flexibly set according to actual needs. By way of example, the ceramic matrix 122 may be provided in 8 to 100 sheets, such as 10 sheets or 20 sheets, to meet the needs of different scenarios.
In an alternative embodiment of the present application, the multilayer ceramic substrate 120 is provided with a heat conductive post penetrating therethrough, and the heat conductive post is connected between the field effect transistor and the lead frame 110.
Specifically, a large amount of heat is generated during the operation of the field effect transistor, in order to promote the generated heat to be timely conducted away, a heat conducting post may be penetratingly disposed on the multilayer ceramic substrate 120, and the heat is better conducted to the lead frame 110 when the field effect transistor is in direct contact with the heat conducting post through the heat conducting property of the heat conducting post, and the lead frame 110 is usually made of a metal material and also has good heat conductivity, so that the heat generated by the field effect transistor is timely conducted out of the DC-DC converter 100, so as to improve the stability of the DC-DC converter 100 when in use.
In an alternative embodiment of the present application, the thickness of the leadframe 110 is greater than or equal to 0.203mm.
In the above manner, the structural strength of the lead frame 110 itself can be ensured, so that the lead frame 110 can still provide stable support in the case of thinning the multilayer ceramic substrate 120. The specific thickness of the lead frame 110 is related to the overall thickness of the multilayer ceramic substrate 120, and may be adjusted according to actual requirements during the practical implementation.
As shown in fig. 2, the lead frame 110 includes a rectangular frame body 114, and a plurality of support ribs 116 disposed in the rectangular frame body 114, and a portion of the first lead-out pins 112 are disposed on the support ribs 116.
Specifically, the lead frame 110 may be formed by stamping or etching using a sheet metal as a base material, and in order to ensure stable support of the multilayer ceramic substrate 120, the plurality of support ribs 116 in the rectangular frame 114 are preferably distributed symmetrically, so that the multilayer ceramic substrate 120 is stressed uniformly, and the problem of local fracture is avoided. In addition, in the DC-DC converter 100 of the embodiment of the present application, the first pins 112 are all located on the plane of the lead frame 110 by using a power quad flat non-leaded semiconductor Package (PQFN) process, and in order to ensure that the first pins 112 fall onto the entity, a part of the first pins 112 need to be disposed on the supporting ribs 116. Compared with the LGA packaging mode, the embodiment of the application can increase the area of the bonding pad, strengthen the strength of the lead-out pins, reduce the peeling hidden danger of the lead-out pins and improve the heat dissipation and the reliability.
In an alternative embodiment of the present application, the ceramic matrix 122 is a soft magnetic ferrite ceramic. The resistivity of the soft magnetic ferrite ceramic is far greater than that of the metal magnetic material, so that the generation of vortex is inhibited, and the ferrite can be applied to the high-frequency field. Meanwhile, the ceramic technology is adopted to easily manufacture various shapes and sizes, has stable chemical characteristics and low manufacturing cost, and does not rust.
Optionally, the outer periphery of the lead frame 110, the multilayer ceramic substrate 120, and the power device 130 are integrally encapsulated with epoxy. In the above manner, the case 140 of the DC-DC converter 100 can be formed to protect the DC-DC converter 100.
As shown in fig. 5, an embodiment of the present application further provides a method for manufacturing a PQFN-packaged DC-DC converter 100, the method including:
s100, manufacturing a lead frame 110, wherein the lead frame 110 comprises a plurality of first lead-out pins 112.
Specifically, the lead frame 110 according to the embodiment of the present application may have a plurality of regions corresponding to the multilayer ceramic substrate 120, and the regions may be arranged in a matrix or may be arranged in a straight line. When the subsequent multilayer ceramic substrate 120 is aligned with the lead frame 110, a plurality of multilayer ceramic substrates 120 may be sequentially disposed on the lead frame 110, so that the subsequent overall plastic packaging and cutting can be performed to improve the processing efficiency.
S200, manufacturing a multilayer ceramic substrate 120, wherein a laminated power inductor is formed in the multilayer ceramic substrate 120, and a plurality of second pins 124 corresponding to the plurality of first pins 112 are provided at the bottom of the multilayer ceramic substrate 120.
Specifically, the process of manufacturing the lead frame 110 and the process of manufacturing the multilayer ceramic substrate 120 may be performed separately and simultaneously, and then the assembly may be performed, so that the processing efficiency may be improved to a greater extent. Wherein, the subsequent alignment connection is performed by a plurality of second lead pins 124 corresponding to the plurality of first lead pins 112 disposed at the bottom of the multilayer ceramic substrate 120.
S300, the power device 130 is mounted on the top of the multilayer ceramic substrate 120, and the power device and the internal coil of the multilayer ceramic substrate and the first lead 112 are combined to form a DC-DC conversion circuit.
Specifically, after the main body of the multilayer ceramic substrate 120 is fabricated, the power device 130 may be mounted on the top of the multilayer ceramic substrate 120, where the power device 130 includes a resistor, a capacitor, an IC chip, and a field effect transistor, and after the power device is sequentially connected, the power device forms a DC-DC conversion circuit together with the internal coil and the bottom first lead pin of the multilayer ceramic substrate. The power device 130 may be mounted by using surface mount technology (Surface Mounted Technology, STM).
S400, the first lead-out pins 112 and the second lead-out pins 124 are soldered to connect the multilayer ceramic substrate 120 and the lead frame 110, wherein the orthographic projection area of the lead frame 110 overlapping with the multilayer ceramic substrate 120 is greater than 50% of the area of the multilayer ceramic substrate 120.
For example, the first and second lead pins 112 and 124 may be soldered by silver to connect the multilayer ceramic substrate 120 with the lead frame 110. In addition, the orthographic projection area of the lead frame 110 overlapped with the multilayer ceramic substrate 120 is greater than 50% of the area of the multilayer ceramic substrate 120, and the lead frame 110 has a good supporting effect on the multilayer ceramic substrate 120, thereby improving the mechanical strength of the multilayer ceramic substrate 120.
S500, the multilayer ceramic substrate 120 and the lead frame 110 are encapsulated.
Specifically, when in plastic packaging, the plastic packaging can be packaged by adopting epoxy resin so as to play roles of water resistance, moisture resistance, shock resistance, dust resistance, corrosion resistance, heat dissipation, confidentiality and the like.
S600, cutting along the outer circumference of the multilayer ceramic substrate 120 to obtain individual DC-DC converters 100.
After the encapsulation is completed, in order to prevent damage to the multilayer ceramic substrate 120 at the time of dicing, dicing is required along the outer circumference of the multilayer ceramic substrate 120 to ensure the integrity of the DC-DC converter.
According to the manufacturing method of the DC-DC converter 100, the supporting strength of the multilayer ceramic substrate 120 can be improved, the product size can be increased without thickening the multilayer ceramic substrate 120 to ensure the mechanical strength of the multilayer ceramic substrate 120, when the manufacturing method is used, the heat dissipation performance can be enhanced due to the fact that the bottom and the periphery of the multilayer ceramic substrate are exposed with lead metal, in addition, the circuit and the power device can be electrically interconnected through the inner coil of the multilayer substrate without a bonding wire, the design of the lead frame is facilitated to be simplified, the wiring difficulty is reduced, and the convenience and the connection efficiency in connection are improved. Thereby improving the applicability of the DC-DC converter 100.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims (10)
1. The DC-DC converter packaged by the PQFN is characterized by comprising a lead frame and a multilayer ceramic substrate arranged on the lead frame, wherein a laminated power inductor is formed in the multilayer ceramic substrate, a power device connected with the laminated power inductor is arranged on one side of the multilayer ceramic substrate, which is away from the lead frame, so as to form a DC-DC conversion circuit, and the orthographic projection area of the lead frame overlapped with the multilayer ceramic substrate is larger than 50% of the area of the multilayer ceramic substrate;
the lead frame is provided with a plurality of first lead-out pins, the multilayer ceramic substrate is provided with a plurality of second lead-out pins, the first lead-out pins are connected with the second lead-out pins in one-to-one correspondence, and orthographic projection of the first lead-out pins and the second lead-out pins on the lead frame coincide.
2. The PQFN packaged DC-DC converter of claim 1, wherein each set of said first pin and said second pin are connected by metal bonding.
3. The PQFN packaged DC-DC converter of claim 1 or 2, wherein the power device comprises a resistor, a capacitor, an IC chip and a field effect transistor.
4. The PQFN packaged DC-DC converter of claim 3, wherein the multilayer ceramic substrate has thermally conductive posts disposed therethrough, the thermally conductive posts being located between the field effect transistor and the leadframe.
5. The PQFN packaged DC-DC converter of claim 1 or 2, wherein the leadframe has a thickness of greater than or equal to 0.203mm.
6. The PQFN packaged DC-DC converter of claim 1 or 2, wherein said multilayer ceramic substrate comprises a plurality of ceramic substrates arranged in a stack, each of said ceramic substrates having a conductive pattern disposed thereon, said conductive patterns on adjacent ones of said ceramic substrates having an overlap region.
7. The PQFN packaged DC-DC converter of claim 6, wherein the ceramic matrix is a soft magnetic ferrite ceramic.
8. The PQFN packaged DC-DC converter of claim 1 or 2, wherein the leadframe, the multilayer ceramic substrate and the periphery of the power device are integrally packaged with epoxy.
9. The PQFN packaged DC-DC converter of claim 3, wherein the leadframe comprises a rectangular frame body and a plurality of support bars disposed within the rectangular frame body, a portion of the first lead-out legs being disposed on the support bars.
10. A method of fabricating a PQFN-packaged DC-DC converter, the method comprising:
manufacturing a lead frame, wherein the lead frame comprises a plurality of first lead-out pins;
manufacturing a multilayer ceramic substrate, wherein a laminated power inductor is formed in the multilayer ceramic substrate, and a plurality of second pins corresponding to the plurality of first pins are arranged at the bottom of the multilayer ceramic substrate;
a power device is mounted on the top of the multilayer ceramic substrate, and a DC-DC conversion circuit is formed together with the internal coil of the multilayer ceramic substrate and the second lead-out pin at the bottom of the multilayer ceramic substrate;
the first lead pin and the second lead pin are welded through metal so as to enable the multilayer ceramic substrate to be connected with the lead frame, wherein the orthographic projection area of the lead frame overlapped with the multilayer ceramic substrate is larger than 50% of the area of the multilayer ceramic substrate;
performing plastic package on the multilayer ceramic substrate and the lead frame;
and cutting along the outer ring of the multilayer ceramic substrate to obtain a single DC-DC converter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311449277.8A CN117174682B (en) | 2023-11-02 | 2023-11-02 | PQFN packaged DC-DC converter and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311449277.8A CN117174682B (en) | 2023-11-02 | 2023-11-02 | PQFN packaged DC-DC converter and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN117174682A CN117174682A (en) | 2023-12-05 |
| CN117174682B true CN117174682B (en) | 2024-02-20 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0562629A2 (en) * | 1992-03-26 | 1993-09-29 | Sumitomo Electric Industries, Limited | Semiconductor device comprising a package |
| KR20050045106A (en) * | 2003-11-10 | 2005-05-17 | 삼성전기주식회사 | A dc-dc converter module easy to sink the heat |
| WO2016199629A1 (en) * | 2015-06-08 | 2016-12-15 | 株式会社村田製作所 | Method for manufacturing ceramic multilayer substrate, method for manufacturing dc-dc converter, ceramic multilayer substrate, and dc-dc converter |
| CN114220787A (en) * | 2021-11-30 | 2022-03-22 | 东莞市三体微电子技术有限公司 | High-integration DC-DC conversion module and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8242588B2 (en) * | 2009-07-17 | 2012-08-14 | Barry Industries, Inc. | Lead frame based ceramic air cavity package |
| US9589868B2 (en) * | 2015-03-11 | 2017-03-07 | Gan Systems Inc. | Packaging solutions for devices and systems comprising lateral GaN power transistors |
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- 2023-11-02 CN CN202311449277.8A patent/CN117174682B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0562629A2 (en) * | 1992-03-26 | 1993-09-29 | Sumitomo Electric Industries, Limited | Semiconductor device comprising a package |
| KR20050045106A (en) * | 2003-11-10 | 2005-05-17 | 삼성전기주식회사 | A dc-dc converter module easy to sink the heat |
| WO2016199629A1 (en) * | 2015-06-08 | 2016-12-15 | 株式会社村田製作所 | Method for manufacturing ceramic multilayer substrate, method for manufacturing dc-dc converter, ceramic multilayer substrate, and dc-dc converter |
| CN114220787A (en) * | 2021-11-30 | 2022-03-22 | 东莞市三体微电子技术有限公司 | High-integration DC-DC conversion module and manufacturing method thereof |
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