CN114220787A - High-integration DC-DC conversion module and manufacturing method thereof - Google Patents
High-integration DC-DC conversion module and manufacturing method thereof Download PDFInfo
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- CN114220787A CN114220787A CN202111445606.2A CN202111445606A CN114220787A CN 114220787 A CN114220787 A CN 114220787A CN 202111445606 A CN202111445606 A CN 202111445606A CN 114220787 A CN114220787 A CN 114220787A
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- ceramic
- fired substrate
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- lamination
- integrated
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000919 ceramic Substances 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000003475 lamination Methods 0.000 claims abstract description 21
- 239000003990 capacitor Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000010344 co-firing Methods 0.000 claims abstract description 11
- 238000003466 welding Methods 0.000 claims abstract description 11
- 239000005022 packaging material Substances 0.000 claims abstract description 10
- 230000008569 process Effects 0.000 claims abstract description 10
- 238000005476 soldering Methods 0.000 claims abstract description 7
- 238000004806 packaging method and process Methods 0.000 claims abstract description 5
- 239000003822 epoxy resin Substances 0.000 claims abstract description 4
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 4
- 239000000696 magnetic material Substances 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 4
- 229910000859 α-Fe Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 4
- RVCKCEDKBVEEHL-UHFFFAOYSA-N 2,3,4,5,6-pentachlorobenzyl alcohol Chemical compound OCC1=C(Cl)C(Cl)=C(Cl)C(Cl)=C1Cl RVCKCEDKBVEEHL-UHFFFAOYSA-N 0.000 abstract description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/24—Magnetic cores
- H01F27/26—Fastening parts of the core together; Fastening or mounting the core on casing or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
Abstract
The invention relates to the field of integrated circuit modules, in particular to a high-integration DC-DC conversion module, which comprises a ceramic co-fired substrate manufactured by a lamination co-firing process, wherein the ceramic co-fired substrate comprises a lamination power inductor, a lamination capacitor, a lamination resistor, an internal circuit connected with a chip inside the ceramic co-fired substrate and on the surface of the ceramic co-fired substrate, and a connecting welding spot on the surface of the ceramic co-fired substrate according to the functional design requirement of a DC-DC circuit; the DC-DC conversion chip is welded on the ceramic co-fired substrate through routing or reflow soldering; and integrally packaging the ceramic co-fired substrate and the periphery of the DC-DC conversion chip welded on the ceramic co-fired substrate by adopting packaging materials such as epoxy resin and the like to form an integrated module. The module obtained by expanding two-dimensional surfaces of the discrete device through the PCBA or through the SIP process has the remarkable technical advantages of high heat dissipation, high integration and small volume; in addition, the integrated module obtained by the invention can be widely applied to various electronic devices such as wearable devices, smart phones and medical devices.
Description
Technical Field
The invention relates to the technical field of integrated circuit modules, in particular to a high-integration DC-DC conversion module and a manufacturing method thereof.
Background
The DC/DC converter is a voltage converter that converts an input voltage and effectively outputs a fixed voltage, and is widely used in products such as a mobile phone, an MP3, a digital camera, a portable media player, and the like, and belongs to a chopper circuit in circuit type classification.
In the design of a traditional electronic integrated circuit, a chip and passive discrete devices such as an inductor, a capacitor, a resistor and the like are designed independently; on the PCB, the chip and the passive discrete device are separated and independent pasting boards; in addition, conventional integrated circuit designs occupy a large area of the board.
In view of the above, a highly integrated DC-DC conversion module and a method for manufacturing the same are provided.
Disclosure of Invention
In order to solve the technical problems, the invention provides the following technical scheme:
a high-integration DC-DC conversion module comprises a ceramic co-fired substrate, a DC-DC conversion chip and a packaging material, wherein the ceramic co-fired substrate is manufactured by a lamination co-firing process, and the ceramic co-fired substrate is integrated with a lamination power inductor, a lamination capacitor, a lamination resistor, an internal circuit connected with the chip inside and on the surface of the ceramic co-fired substrate and a connection welding spot arranged on the surface of the ceramic co-fired substrate; the DC-DC conversion chip is connected with the ceramic co-fired substrate through bonding or reflow soldering; in order to further improve the integration level of the DC-DC conversion module, the ceramic co-fired substrate can be used for integrating a DC-DC conversion chip and welding and integrating other discrete devices; the peripheries of the ceramic co-fired substrate and the DC-DC conversion chip welded on the ceramic co-fired substrate are integrally packaged through a packaging material to form an integral integrated module device.
As a preferred technical solution of the present invention, the soft magnetic material of the stacked power inductor is preferably a ferrite soft magnetic material, a metal soft magnetic material, or a composite material of the two.
As a preferred technical scheme of the invention, the ceramic co-fired substrate is provided with connecting welding spots and connecting lines according to the design function requirements of a module, the connecting welding spots are electrically connected with the DC-DC chip, and the connecting lines are electrically connected with the interior of the ceramic co-fired substrate.
As a preferred technical solution of the present invention, the DC-DC conversion chip may be a wafer bare chip or a packaged and tested patch chip.
Meanwhile, the invention also discloses a manufacturing method of the high-integration DC-DC conversion module, which comprises the following steps;
s1, calculating a required laminated power inductor, a laminated capacitor and a laminated resistor according to the expected circuit function realized by the DC-DC module, and embedding the compatible design into the ceramic co-fired substrate;
s2, designing a circuit layout according to the expected DC-DC module function and the size and pin position of an external device, and designing a three-dimensional electrically-communicated integrated ceramic co-fired substrate, wherein the integrated ceramic co-fired substrate comprises a laminated power inductor, a laminated capacitor and a laminated resistor required by the DC-DC module;
s3, preparing the designed three-dimensional electrically communicated integrated ceramic co-fired substrate by a lamination co-firing technology;
s4, combining the DC-DC conversion chip on the ceramic co-fired substrate through processes such as routing or reflow soldering;
and S5, performing peripheral packaging on the assembly obtained through the S1-S4 by adopting epoxy resin or other packaging materials to obtain an integrated module, so that the DC-DC conversion chip is protected conveniently and the module is convenient to absorb and feed in an SMT mode.
The invention has the beneficial effects that:
according to the high-integration DC-DC conversion module and the manufacturing method thereof, part of passive discrete devices are integrated into the ceramic co-fired substrate through a ceramic co-firing process, and meanwhile, welding of external passive discrete devices such as a DC-DC conversion chip and the like is carried out on the top of the ceramic co-fired substrate to carry out three-dimensional structure design. The module obtained by the invention has the technical advantages of high heat dissipation, high integration and small volume. Meanwhile, the integrated module obtained by the invention can be widely applied to various electronic devices such as wearable devices, smart phones and medical devices.
According to the invention, the inductor, the capacitor and the resistor are subjected to lamination co-firing integrated design through a ceramic co-firing process, the two-dimensional expansion design of a traditional device on a PCB is changed into the lamination co-firing three-dimensional expansion design, and the two-dimensional area of the PCB is reduced, so that the overall dimension of the whole product is basically unchanged or reduced under the trend that the functions of the whole product are gradually increased; in addition, the invention relatively reserves more space for the battery, so that the cruising ability of the product is increased.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of a highly integrated DC-DC conversion module according to the present invention;
FIG. 2 is a schematic diagram of the internal circuit design of a co-fired ceramic substrate of a highly integrated DC-DC conversion module according to the present invention;
FIG. 3 is a schematic diagram of the structure of the external circuit and the electrodes of the co-fired ceramic substrate of the highly integrated DC-DC conversion module of the present invention;
FIG. 4 is an overall schematic diagram of the overall internal and external circuitry and electrode structure of a ceramic co-fired substrate of a highly integrated DC-DC conversion module according to the present invention;
FIG. 5 is a schematic diagram of a combined structure of a co-fired ceramic substrate and a DC-DC conversion chip of a highly integrated DC-DC conversion module according to the present invention;
FIG. 6 is a schematic diagram of the demo functional circuit design of the Yutai DC-DC conversion chip ETA 3446;
FIG. 7 is a schematic diagram of the functional circuit design of an integrated module based on Yutai DC-DC conversion chip ETA3446 according to the present invention;
in the figure: 1. a ceramic co-fired substrate; 11. a laminated power inductor; 12. a stacked capacitor; 13. a stack resistance; 14. connecting welding spots; 15. connecting a line; 2. a DC-DC conversion chip; 3. and (5) packaging the material.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
Example (b): as shown in fig. 1-7
A high-integration DC-DC conversion module comprises a ceramic co-fired substrate 1, a DC-DC conversion chip 2 and a packaging material 3, wherein the ceramic co-fired substrate 1 is manufactured through a lamination co-firing process, and the ceramic co-fired substrate 1 is integrated with a lamination power inductor 11, a lamination capacitor 12, a lamination resistor 13, an internal circuit connected with the chip inside the ceramic co-fired substrate 1 and on the surface of the ceramic co-fired substrate and a connection welding spot 14 arranged on the surface of the ceramic co-fired substrate. The soft magnetic material of the laminated power inductor 11 is preferably ferrite soft magnetic material, metal soft magnetic material or composite material of the ferrite soft magnetic material and the metal soft magnetic material. The ceramic co-fired substrate 1 is designed and prepared with connecting welding spots 14 and connecting lines 15 according to the requirements of module design functions, the connecting welding spots 14 are electrically connected with the DC-DC conversion chip 2, and the connecting lines 15 are electrically connected with the interior of the ceramic co-fired substrate 1.
The DC-DC conversion chip 2 is connected with the ceramic co-fired substrate 1 through bonding or reflow soldering; the peripheries of the ceramic co-fired substrate 1 and the DC-DC conversion chip 2 welded on the ceramic co-fired substrate 1 are integrally packaged by a packaging material 3 to form an integral integrated module device. In the present invention, the DC-DC conversion chip 2 may be a wafer bare chip or a packaged and tested chip.
Yu Tai DC-DC conversion chip ETA3446 is taken as a design reference chip.
A manufacturing method of a high-integration DC-DC conversion module comprises the above high-integration DC-DC conversion module, and further comprises the following steps:
s1, calculating the required laminated power inductor 11, laminated capacitor 12 and laminated resistor 13 according to the expected circuit function of the DC-DC module, and embedding the compatible design into the ceramic co-fired substrate 1, as shown in FIG. 1;
s2, designing a circuit layout according to the expected DC-DC module function and the size and pin position of an external device, and designing a three-dimensional electrically-communicated integrated ceramic co-fired substrate 1, wherein the integrated ceramic co-fired substrate comprises a laminated power inductor 11, a laminated capacitor 12 and a laminated resistor 13 required by the DC-DC module, and is shown in FIG. 2;
s3, preparing the designed three-dimensional electrically communicated integrated ceramic co-fired substrate 1 by a lamination co-firing technology;
s4, combining the DC-DC conversion chip 2 on the ceramic co-fired substrate 1 through processes such as routing or reflow soldering;
and S5, performing peripheral packaging on the assembly obtained through the S1-S4 by adopting epoxy resin or other packaging materials 3 to obtain an integrated module.
Compared with the traditional method of unfolding a two-dimensional surface of a discrete device through a PCBA, the module obtained by the invention has the remarkable technical advantages of high integration and small volume; in addition, the integrated module obtained by the invention can be widely applied to various electronic devices such as wearable devices, smart phones and medical devices, and the advantage of small volume enables the whole device to have higher portability.
In the description of the present invention, it should be noted that the terms "vertical", "upper", "lower", "horizontal", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. A high-integration DC-DC conversion module comprises a ceramic co-fired substrate (1), a DC-DC conversion chip (2) and a packaging material (3), and is characterized in that the ceramic co-fired substrate (1) is manufactured by a lamination co-firing process, and the ceramic co-fired substrate (1) is integrated with a lamination power inductor (11), a lamination capacitor (12), a lamination resistor (13), an internal circuit connected with the chip inside and on the surface of the ceramic co-fired substrate (1), and a connecting welding spot (14) arranged on the surface of the internal circuit; the DC-DC conversion chip (2) is connected with the ceramic co-fired substrate (1) through routing or reflow soldering; the periphery of the ceramic co-fired substrate (1) and the periphery of the DC-DC conversion chip (2) welded on the ceramic co-fired substrate (1) are integrally packaged through a packaging material (3) to form an integral integrated module device.
2. A highly integrated DC-DC converter module according to claim 1, characterized in that the soft magnetic material of the laminated power inductor (11) is preferably ferrite soft magnetic material, metal soft magnetic material or a composite material of both.
3. The highly integrated DC-DC conversion module according to claim 1, characterized in that the ceramic co-fired substrate (1) is designed and prepared with connection pads (14) and connection lines (15) according to the module design function requirements, the connection pads (14) are electrically connected with the DC-DC conversion chip (2), and the connection lines (15) are electrically connected with the inside of the ceramic co-fired substrate (1).
4. The highly integrated DC-DC conversion module according to claim 1, wherein the DC-DC conversion chip (2) can be a wafer bare chip or a packaged and tested chip.
5. A method of manufacturing a highly integrated DC-DC conversion module, comprising a highly integrated DC-DC conversion module according to claims 1-4, further comprising the steps of:
s1, calculating a required laminated power inductor (11), a laminated capacitor (12) and a laminated resistor (13) according to the circuit function expected to be realized by the DC-DC module, and embedding the compatible design into the ceramic co-fired substrate (1);
s2, designing a circuit layout according to the expected DC-DC module function and the size and pin position of an external device, and designing a three-dimensional electrically-communicated integrated ceramic co-fired substrate (1) which comprises a laminated power inductor (11), a laminated capacitor (12) and a laminated resistor (13) required by the DC-DC module;
s3, preparing the designed three-dimensional electrically communicated integrated ceramic co-fired substrate (1) by a lamination co-firing technology;
s4, combining the DC-DC conversion chip (2) on the ceramic co-fired substrate (1) through processes such as routing or reflow soldering;
and S5, performing peripheral packaging on the assembly obtained through the S1-S4 by adopting epoxy resin or other packaging materials (3) to obtain an integrated module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111445606.2A CN114220787A (en) | 2021-11-30 | 2021-11-30 | High-integration DC-DC conversion module and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111445606.2A CN114220787A (en) | 2021-11-30 | 2021-11-30 | High-integration DC-DC conversion module and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN114220787A true CN114220787A (en) | 2022-03-22 |
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| CN202111445606.2A Pending CN114220787A (en) | 2021-11-30 | 2021-11-30 | High-integration DC-DC conversion module and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117174682A (en) * | 2023-11-02 | 2023-12-05 | 广东芯陶微电子有限公司 | PQFN packaged DC-DC converter and manufacturing method thereof |
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2021
- 2021-11-30 CN CN202111445606.2A patent/CN114220787A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117174682A (en) * | 2023-11-02 | 2023-12-05 | 广东芯陶微电子有限公司 | PQFN packaged DC-DC converter and manufacturing method thereof |
| CN117174682B (en) * | 2023-11-02 | 2024-02-20 | 广东芯陶微电子有限公司 | PQFN packaged DC-DC converter and manufacturing method thereof |
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