GB2146937B - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

Info

Publication number
GB2146937B
GB2146937B GB08424394A GB8424394A GB2146937B GB 2146937 B GB2146937 B GB 2146937B GB 08424394 A GB08424394 A GB 08424394A GB 8424394 A GB8424394 A GB 8424394A GB 2146937 B GB2146937 B GB 2146937B
Authority
GB
United Kingdom
Prior art keywords
bonding wire
bonding
semiconductor device
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08424394A
Other versions
GB2146937A (en
GB8424394D0 (en
Inventor
Susumu Okikawa
Hiroshi Mikino
Wahei Kitamura
Hiromichi Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP58177944A external-priority patent/JPS6070750A/en
Priority claimed from JP58177945A external-priority patent/JPS6070751A/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB8424394D0 publication Critical patent/GB8424394D0/en
Publication of GB2146937A publication Critical patent/GB2146937A/en
Application granted granted Critical
Publication of GB2146937B publication Critical patent/GB2146937B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A bonding wire 6 for connecting a semiconductor pellet 3 and a lead in a semiconductor device has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding and/or by employing a specified composition for the material of the bonding wire. In addition, good bondability can be attained if the hardness of a ball formed at the end of the bonding wire for ball bonding is in a specified range of Vickers hardness of 30 to 50, preferably 35 to 42. The bonding wire is made of aluminum or an aluminum composition containing e.g. about 1.5 weight-% of magnesium or about 2% of silicon. <IMAGE>
GB08424394A 1983-09-28 1984-09-27 Semiconductor device and method of manufacturing the same Expired GB2146937B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58177944A JPS6070750A (en) 1983-09-28 1983-09-28 Semiconductor device
JP58177945A JPS6070751A (en) 1983-09-28 1983-09-28 Semiconductor device

Publications (3)

Publication Number Publication Date
GB8424394D0 GB8424394D0 (en) 1984-10-31
GB2146937A GB2146937A (en) 1985-05-01
GB2146937B true GB2146937B (en) 1987-04-23

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GB08424394A Expired GB2146937B (en) 1983-09-28 1984-09-27 Semiconductor device and method of manufacturing the same

Country Status (7)

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KR (1) KR920008252B1 (en)
DE (1) DE3435489A1 (en)
FR (1) FR2555813B1 (en)
GB (1) GB2146937B (en)
HK (1) HK22389A (en)
IT (1) IT1176815B (en)
SG (1) SG77288G (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1183375B (en) * 1984-02-24 1987-10-22 Hitachi Ltd SEMICONDUCTOR DEVICE INCLUDING A BALL, CONDUCTING WIRES AND EXTERNAL CONDUCTING PORTIONS ARE CONNECTED TO THE BALL THROUGH SUCH CONDUCTING WIRES
JPS60223149A (en) * 1984-04-19 1985-11-07 Hitachi Ltd Semiconductor device
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
US4976393A (en) * 1986-12-26 1990-12-11 Hitachi, Ltd. Semiconductor device and production process thereof, as well as wire bonding device used therefor
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Also Published As

Publication number Publication date
HK22389A (en) 1989-03-24
KR850002668A (en) 1985-05-15
FR2555813B1 (en) 1986-06-20
IT1176815B (en) 1987-08-18
DE3435489A1 (en) 1985-05-02
IT8422846A0 (en) 1984-09-26
FR2555813A1 (en) 1985-05-31
GB2146937A (en) 1985-05-01
GB8424394D0 (en) 1984-10-31
KR920008252B1 (en) 1992-09-25
IT8422846A1 (en) 1986-03-26
SG77288G (en) 1989-03-23

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