DD200954A1 - MICROWIRE OF ALUMINUM FOR WIRE BONDING - Google Patents

MICROWIRE OF ALUMINUM FOR WIRE BONDING Download PDF

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Publication number
DD200954A1
DD200954A1 DD81234215A DD23421581A DD200954A1 DD 200954 A1 DD200954 A1 DD 200954A1 DD 81234215 A DD81234215 A DD 81234215A DD 23421581 A DD23421581 A DD 23421581A DD 200954 A1 DD200954 A1 DD 200954A1
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DD
German Democratic Republic
Prior art keywords
wire
aluminum
micro
layered
copper
Prior art date
Application number
DD81234215A
Other languages
German (de)
Inventor
Wolfgang Werner
Klaus Berndt
Frank Rudolf
Peter Symmank
Original Assignee
Wolfgang Werner
Klaus Berndt
Frank Rudolf
Peter Symmank
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wolfgang Werner, Klaus Berndt, Frank Rudolf, Peter Symmank filed Critical Wolfgang Werner
Priority to DD81234215A priority Critical patent/DD200954A1/en
Publication of DD200954A1 publication Critical patent/DD200954A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/4557—Plural coating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]

Abstract

Die Erfindung betrifft einen Mikrodraht mit dem Hauptbestandteil Aluminium fuer das Drahtbonden, insbesondere fuer das Kugelbondverfahren. Erfindungsgemaess wird die Aufgabe dadurch geloest, dass der Aluminiumdraht mit einer duennen Schicht aus Kupfer, Nickel, Silber, Gold oder einem in bezug auf die Oxidhautbildung aehnlichen Metall einschichtig, mehrschichtig oder in Legierung ueberzogen ist. Es wurde festgestellt, dass sich ein Mikrodraht mit einer Umhuellung aus einem Material der angegebenen Art sehr gut zum Anschmelzen gleichmaessiger Verdickungen eignet. Selbst bei laengerer Lagerung weist ein z.B. mit Kupfer beschichteter Aluminiumdraht eine deutlich hoehere Ausbeute auf.The invention relates to a micro-wire with the main component aluminum for wire bonding, in particular for the Kugelbondverfahren. According to the invention, the object is achieved in that the aluminum wire is coated with a thin layer of copper, nickel, silver, gold or a metal which is similar in terms of oxide film formation in a single-layered, multi-layered or alloyed manner. It has been found that a micro-wire with a wrapping of a material of the type specified is very well suited for melting uniform thickening. Even with prolonged storage, e.g. copper wire coated aluminum wire a significantly higher yield.

Description

BiLkrodraht aus Aluminium für das DrahtbondenAluminum wire for wire bonding

.Anwendungsgebiet der Erfindung.Automation of the invention

Die Erfindung betrifft einen Mikrodraht mit dem Hauptbestandteil Aluminium für das Drahtbonden, insbesondere für das Kugelbondverfahrenβ The invention relates to a micro-wire with the main component aluminum for wire bonding, in particular for the ball bonding method β

Charakteristik der bekannten technischen Lösungen-Characteristic of the known technical solutions-

Nach DS-OS 2621138 und DE-OS 2832o5o ist bekannt, daß zum Kugelanschmelzen auch Mikrodrahte aus Aluminium und seinen Legierungen, vorzugsweise AlSiI und AlMgI, verwendet werden* Das Kugelanschmelzen erfolgt durch Kondensatorentladung unter Schutzgas; das Bonden im aligemeinen mit Ultraschall,Die dabei erreichte Ausbeute ist trotz des Schutzgases, vor allem durch die Ungleichmäßigkeit der angeschmolzenen Verdickungen, noch nicht ausreichend. Sie liegt deutlich unter den vierten, die beispielsweise mit Mikrodraht aus Gold erreicht werden,According to DS-OS 2621138 and DE-OS 2832o5o it is known that for ball melting and micro-wires of aluminum and its alloys, preferably AlSiI and AlMgI, are used * The Kugelanschmelzen carried out by capacitor discharge under inert gas; the bonding generally with ultrasound, the achieved yield is not sufficient despite the protective gas, especially by the unevenness of the melted thickening. It is well below the fourth, which can be achieved with gold micro-wire, for example.

Ziel der ErfindungObject of the invention

Das Ziel der Erfindung ist ein Mikrodraht mit dem Hauptbestandteil Aluminium, der sich vorteilhaft zum Kugelbonden einsetzen läßt e The object of the invention is a micro-wire with the main component aluminum, which can be used advantageously for ball bonding e

Darlegung des Wesens der ErfindungExplanation of the essence of the invention

Aufgabe der Erfindung ist ein .Mikrodraht mit dem Hauptbestandteil Aluminiumj an den gleichmäßige Verdickungen angeschmolzen und mit dem zuverlässige Kontakte hergestellt v/erden können. Erfindungsgemäß wird die Aufgabe dadurch gelöst, daß der Aluminiumdraht mit einer dünnen Schicht aus Kupfer,Nickel,Silber, Gold oder einem in bezug auf die Oxidhautbildung ähnli-The object of the invention is a .Mikrodraht with the main component Aluminiumj fused to the uniform thickening and manufactured with the reliable contacts v / ground can. According to the invention the object is achieved in that the aluminum wire with a thin layer of copper, nickel, silver, gold or a similar with respect to the Oxidhautbildung

ft in η α η. rs t' ty t, «a r% ft in η α η. rs t 'ty t, "a r%

— 2 —- 2 -

chen Metall, einschichtig, mehrschichtig oder in Legierung überzogen ist« Es wurde festgestellt, daß sich ein Mikrodraiit mit einer umhüllung aus einem Material der angegebenen Art sehr gut zum Anschmelzen gleichmäßiger Verdickungen eignete Selbst bei längerer Lagerung weist ein z.B. mit Kupfer beschichteter Aluminiumdraht eine deutlich höhere Ausbeute auf.It has been found that a microdraithite with a coating of a material of the stated type is very well suited for melting uniform thickenings. copper-coated aluminum wire has a significantly higher yield.

Ausführungsbeispielembodiment

Ein dickerer Aluminiumdraht wird mit Kupfer ummantelt und auf die übliche Mikrodrahtstärke von z. B. 3o /um gezogen. Die Stärke der Kupferschicht beträgt ca. 1-2 ,um. Durch beispielsweise ätzchemisches Abtragen werden typische Schichtdicken zv/ischen 2o nm und 2ooo nm einstellbar. Die Ausbeute beim Kugelanschmelzen mit diesem Mikrodraht liegt in der Mhe der V/erte, die mit Go i ami kr ο draht erreicht werden. Die Gleichmäßigkeit der angeschmolzenen Yerdickimgen ist mit der bei Gcldmikrodraht vergleichbareA thicker aluminum wire is coated with copper and the usual micro-wire thickness of z. B. 3o / um pulled. The thickness of the copper layer is about 1-2 to. By means of etching etching, for example, typical layer thicknesses can be set to 2 nm and 2 000 nm. The yield of ball melting with this microwire is in the range of the values achieved with Go i ami kr ο wire. The uniformity of the melted Yerdickimgen is comparable to that in Gcldmikrodraht

Claims (3)

indungsanspruchindungsanspruch 1. Mikrodraht mit dem Hauptbestandteil Aluminium, gekennzeichnet dadurch5 daß der Mikrodraht mit einer dünnen Schicht; eines anderen Metalls überzogen ist, welches sich in bezug, auf die Oxidhautbildung anders verhält als Aluminium»1. Micro-wire with the main component aluminum, characterized dadurch5 that the micro-wire with a thin layer; coated with another metal, which behaves differently with respect to oxide film formation than aluminum » 2* Mikrodraht nach Punkt 1» gekennzeichnet dadurch, daß dei? Mikrodraht mit einer dünnen Schicht aus Kupfer, Nikkei, Silber, Gold oder einem in bezug auf die Oxidhautbildung ähnlichen Metall, einschichtig, mehrschichtig oder in Legierung überzogen ist.2 * microwire according to point 1 », characterized in that dei? Micro-wire with a thin layer of copper, nikkei, silver, gold or a metal similar to oxide skin formation, single-layered, multi-layered or alloyed. 3<» Mikrodraht nach Punkt 1 und 2, gekennzeichnet dadurch, daß die dünne Schicht eine Dicke zwischen 2o run und 2ooo nm aufweista 3 <»Microwire according to points 1 and 2, characterized in that the thin layer has a thickness between 2o run and 2ooo nm a
DD81234215A 1981-10-20 1981-10-20 MICROWIRE OF ALUMINUM FOR WIRE BONDING DD200954A1 (en)

Priority Applications (1)

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DD81234215A DD200954A1 (en) 1981-10-20 1981-10-20 MICROWIRE OF ALUMINUM FOR WIRE BONDING

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DD81234215A DD200954A1 (en) 1981-10-20 1981-10-20 MICROWIRE OF ALUMINUM FOR WIRE BONDING

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435489A1 (en) * 1983-09-28 1985-05-02 Hitachi Ltd SEMICONDUCTOR DEVICE AND METHOD FOR THEIR PRODUCTION
DE3704200A1 (en) * 1987-02-11 1988-08-25 Bbc Brown Boveri & Cie METHOD FOR PRODUCING A CONNECTION BETWEEN A BONDED WIRE AND A CONTACT AREA IN HYBRID THICK-LAYER CIRCUITS
US5097100A (en) * 1991-01-25 1992-03-17 Sundstrand Data Control, Inc. Noble metal plated wire and terminal assembly, and method of making the same
DE4232745A1 (en) * 1992-09-30 1994-03-31 Univ Dresden Tech Wire for ultrasonic bonding - has wire of ductile metal such as gold or copper coated with thin layer of harder material

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3435489A1 (en) * 1983-09-28 1985-05-02 Hitachi Ltd SEMICONDUCTOR DEVICE AND METHOD FOR THEIR PRODUCTION
DE3704200A1 (en) * 1987-02-11 1988-08-25 Bbc Brown Boveri & Cie METHOD FOR PRODUCING A CONNECTION BETWEEN A BONDED WIRE AND A CONTACT AREA IN HYBRID THICK-LAYER CIRCUITS
US5097100A (en) * 1991-01-25 1992-03-17 Sundstrand Data Control, Inc. Noble metal plated wire and terminal assembly, and method of making the same
DE4232745A1 (en) * 1992-09-30 1994-03-31 Univ Dresden Tech Wire for ultrasonic bonding - has wire of ductile metal such as gold or copper coated with thin layer of harder material
DE4232745C2 (en) * 1992-09-30 2002-07-18 Univ Dresden Tech Bond wire for ultrasonic bonding

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