DE4232745C2 - Bond wire for ultrasonic bonding - Google Patents

Bond wire for ultrasonic bonding

Info

Publication number
DE4232745C2
DE4232745C2 DE4232745A DE4232745A DE4232745C2 DE 4232745 C2 DE4232745 C2 DE 4232745C2 DE 4232745 A DE4232745 A DE 4232745A DE 4232745 A DE4232745 A DE 4232745A DE 4232745 C2 DE4232745 C2 DE 4232745C2
Authority
DE
Germany
Prior art keywords
wire
bond
bond wire
ultrasonic bonding
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE4232745A
Other languages
German (de)
Other versions
DE4232745A1 (en
Inventor
Gerhard Blasek
Uwe Buergel
Frank Rudolf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technische Universitaet Dresden
Original Assignee
Technische Universitaet Dresden
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technische Universitaet Dresden filed Critical Technische Universitaet Dresden
Priority to DE4232745A priority Critical patent/DE4232745C2/en
Publication of DE4232745A1 publication Critical patent/DE4232745A1/en
Application granted granted Critical
Publication of DE4232745C2 publication Critical patent/DE4232745C2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/20107—Temperature range 250 C=<T<300 C, 523.15K =<T< 573.15K

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

Die Erfindung betrifft einen Bonddraht bzw. ein Bändchen (im folgenden Bonddraht) aus Gold oder Kupfer, zum Ultraschallbonden bei Raumtemperatur.The invention relates to a bond wire or a ribbon (hereinafter bond wire) Gold or copper, for ultrasonic bonding Room temperature.

Bonddrähte aus Gold oder Kupfer werden üblicherweise durch Thermosonic-Drahtbonden bei Temperaturen zwischen 150 und 350°C verarbeitet. Niedrigere Verarbeitungstemperaturen führen zu verschlechterter Verfah­ renszuverlässigkeit.Bond wires made of gold or copper are usually made by thermosonic wire bonding at temperatures processed between 150 and 350 ° C. Lower processing temperatures lead to poorer processing renszuverlässigkeit.

Abgesehen von dem erhöhten Aufwand zur Vorwärmung der Bauelemente und für beheizte Werkzeuge ist die untere Temperaturgrenze von 150°C für einige Bauelemente und schon vorhandene Kontaktierungen zu hoch.Apart from the increased effort for preheating the components and for heated tools the lower temperature limit of 150 ° C for some components and existing contacts high.

Es ist bekannt, daß der Zustand der Oberflächen der Bondpartner einen großen Einfluß auf das Bondergebnis besitzt. Entsprechend hoch sind die Anforderungen an die Reinheit der Oberflächen.It is known that the condition of the surfaces of the bond partners has a great influence on the bond result has. The requirements for the cleanliness of the surfaces are correspondingly high.

Aus JP Pat. Abstr. 62-287634 A ist ein Bonddraht mit einem Kern aus Kupfer bekannt, der einen Mantel aus Ag, Sn, Be, Zn, Al oder Cr aufweist. Die Schichtdicke des Mantels beträgt 1/10 . . . 3/10 der Außendurchmessers des Bonddrahtes.From JP Pat. Abstr. 62-287634 A is a Bond wire with a copper core known who made a coat Ag, Sn, Be, Zn, Al or Cr. The layer thickness of the jacket is 1/10. , , 3/10 of the outside diameter of the bond wire.

Beim Bonden bei Raum­ temperatur entsteht eine Verbindung zwischen dem Mantel und der Anschluß­ fläche. Die Herstellung einer direkten Verbindung zwischen dem Kern aus Kupfer und der Anschlußfläche ist nicht möglich.When bonding in space temperature creates a connection between the jacket and the connector area. Making a direct Connection between the core Copper and the pad is not possible.

Aus JP Pat. Abstr. 62-30359 A ist ein Bonddraht mit einem Kern aus Kupfer bekannt, der eine eigene Oxidschicht mit einer mittleren Schichtdichte von 5 nm bis 30 nm aufweist. Diese Schicht dient der Verhinderung von Mikroverschweißungen der einzelnen Lagen des Bonddrahtes auf der kreuzweise bewickelten Vorratsspule. Die Mantelschicht aus Kupferoxid verhindert das ungewollte Verschweißen des Bonddrahtes auf der Spule, hemmt aber zugleich den eigentlichen Schweißvorgang (Beeinträchtigung der Schweißeignung).From JP Pat. Abstr. 62-30359 A is a bond wire with a core Copper is known to have its own oxide layer with an average layer density of 5 nm to 30 nm. This Layer serves to prevent Micro-welding of the individual  Lay the bond wire on the cross-wound supply spool. The cladding layer made of copper oxide prevents unwanted welding of the bond wire on the coil, inhibits but at the same time the real one Welding process (impairment suitability for welding).

Aufgabe der Erfindung ist es, die Zuverlässigkeit des Ultraschallbondens mit Bonddrähten aus Gold oder Kupfer so zu erhöhen, dass die Bauelemente bei Raumtemperatur sicher gebondet werden können.The object of the invention is that Reliability of ultrasonic bonding with gold or copper bond wires so increase the components bonded securely at room temperature can be.

Diese Aufgabe wird durch einen Bonddraht nach dem Patentanspruch gelöst.This task is accomplished by a bond wire after the Claim resolved.

Mit reinem Goldmikrodraht wurden durch Ultraschall-Keilbonden bei Raumtemperatur und mit optimierten Bondparametern auf goldmetallisierte Pads Verbindungen hergestellt, deren im Abreißtest ermittelte mittlere Abreißkraft etwa 50% der Reißkraft des Drahtes betrug. Demgegenüber wurden für unter gleichen Bedingun­ gen hergestellte Verbindungen aus Goldmikrodraht mit einer Aluminium/Aluminiumoxid-Schicht von 50 nm Dicke eine mittlere Abreißkraft von etwa 80% der Reißkraft des Drahtes ermittelt.With pure gold micro wire were optimized by ultrasonic wedge bonding at room temperature and with Bond parameters made on gold metallized pads, the middle of which was determined in the tear test Tear-off force was approximately 50% of the wire's tear strength. In contrast, were for under the same conditions connections made of gold micro wire with an aluminum / aluminum oxide layer of 50 nm Thickness determined an average tear force of about 80% of the tear strength of the wire.

Die Schicht schützt das Drahtmaterial bis zur Bindung vor Kontaminationen bzw. bei Kupfer vor Oxidation. Sie bricht bei der Drahtdeformation im Bondprozeß auf. Die eigentliche Bindung findet zwischen dem Drahtma­ terial und der Pad-Metallisierung statt. The layer protects the wire material from contamination up to the bond or, in the case of copper, from oxidation. It breaks open in the wire deformation in the bonding process. The actual binding takes place between the wire size material and the pad metallization instead.  

Auch in den Fällen, wo mit ersten Testbeschichtungen noch keine wesentliche Verbesserung der mittleren Abreißkraft erreicht wurde, verringerte sich die Streuung der Abreißkräfte signifikant, und es konnte mit geringerer Energie und damit geringerer mechanische Belastung des Drahtes gebondet werden. Die vergleich­ weise geringe Drahtdeformation, die zur Ausbildung der Bindung nötig ist, führt wegen der geringeren Kerbwir­ kungen des Bondwerkzeuges zur Verbesserung der Gesamtfestigkeit der Verbindung und erhöhter Verfahrens­ zuverlässigkeit. Der Anteil der im Abreißtest durch Drahtriß ausgefallenen Bondverbindungen stieg gegenüber dem der durch Abheben ausgefallenen von 50 : 50 auf bis zu 84 : 14 deutlich an.Even in cases where the first test coatings have not yet improved the mean significantly Tear-off force was reached, the spread of the tear-off forces decreased significantly, and it was possible to lower energy and thus lower mechanical stress on the wire can be bonded. The comparison wise little wire deformation, which is necessary for the formation of the bond, leads due to the lower score Kungen the bonding tool to improve the overall strength of the connection and increased process reliability. The proportion of bond connections that failed due to wire breaks in the tear test increased from 50:50 up to 84:14, the one that dropped out.

Die Technologien zur Ummantelung des Bonddrahtes mit den genannten Materialien sind grundsätzlich bekannt. Die Materialschichten können zum Beispiel aufgedampft, aufgesputtert oder galvanisch abgeschieden werden.The technologies for sheathing the bond wire with the materials mentioned are fundamental known. The material layers can, for example, be vapor-deposited, sputtered on or galvanically deposited become.

Die Erfindung wird nachfolgend in mehreren Ausführungsbeispielen dargestellt.The invention is illustrated below in several exemplary embodiments.

Getestet wurden in je 50 Bondversuchen mit Ultraschall (US) bei jeweils gleichen Bondparametern:
The tests were carried out in 50 bond tests using ultrasound (US) with the same bond parameters:

  • 1. Ein 30 µm dicker Golddraht aus 99,99% Gold mit einer Reißkraft von 13,5 cN und einer Dehnung von 6-8% (Draht 1).1. A 30 µm thick gold wire made of 99.99% gold with a tensile strength of 13.5 cN and an elongation of 6-8% (wire 1 ).
  • 2. Ein Draht 1, auf dem eine 50 nm dicke Aluminiumschicht aufgesputtert und der an Luft oxidiert war (Draht 2).2. A wire 1 on which a 50 nm thick aluminum layer was sputtered and which was oxidized in air (wire 2 ).
  • 3. Ein Draht 1, der mit einer 200 nm dicken Zinnschicht überzogen und 24 h bei 155°C getempert war (Draht 3).3. A wire 1 which was coated with a 200 nm thick tin layer and was annealed for 24 h at 155 ° C. (wire 3 ).
  • 4. Ein Draht 1, auf dem eine 50 nm dicke Nickelschicht galvanisch abgeschieden war (Draht 4). 4. A wire 1 on which a 50 nm thick nickel layer was electrodeposited (wire 4 ).

Langzeituntersuchungen von Verbindungen mit dem Draht 2 bei trockener Wärme (155°C) bis zu 1200 h zeigten keine Veränderungen des anfänglichen Kontaktwiderstandes von 9 mOhm. Es kann angenommen werden, daß sich offensichtlich kein Aluminium aus der dünnen Mantelschicht des Bonddrahtes in die Verbin­ dungsschicht einlagert und sich keine intermetallischen Phasen bilden, sonst hatte der Kontaktwiderstand ansteigen müssen.Long-term investigations of connections with the wire 2 in dry heat (155 ° C) up to 1200 h showed no changes in the initial contact resistance of 9 mOhm. It can be assumed that obviously no aluminum from the thin sheath layer of the bonding wire is deposited in the connecting layer and no intermetallic phases form, otherwise the contact resistance had to increase.

Claims (1)

1. Bonddraht zum Ultraschallbonden bei Raumtemperatur mit einem Kern aus Gold oder Kupfer und einer aufgebrachten Beschichtung aus Aluminium oder Aluminiumoxid, wobei die Beschichtung eine mittlere Schichtdicke von 5 nm bis 100 nm aufweist.1. Bond wire for ultrasonic bonding at room temperature with a core of gold or copper and one applied coating of aluminum or aluminum oxide, wherein the coating has an average layer thickness of 5 nm to 100 nm.
DE4232745A 1992-09-30 1992-09-30 Bond wire for ultrasonic bonding Expired - Lifetime DE4232745C2 (en)

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Cited By (5)

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Publication number Priority date Publication date Assignee Title
DE102006060899A1 (en) 2006-12-20 2008-07-10 Micro-Systems-Engineering Gmbh & Co. Kg Lead wire, method of making such and assembly
DE102008043361A1 (en) 2008-10-31 2010-05-06 Micro Systems Engineering Gmbh Connecting wire and method for producing such
DE102010056343A1 (en) 2010-12-29 2012-07-05 Von Ardenne Anlagentechnik Gmbh Device for vacuum-thin film coating of rod- or tubular-shaped solid substrates, comprises magnetron as source for coating, where magnetron is aligned on destination and comprises target arranged in sequence starting from destination
US8485418B2 (en) 1995-05-26 2013-07-16 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out
DE102010031993B4 (en) * 2010-07-22 2015-03-12 Heraeus Materials Technology Gmbh & Co. Kg A method of manufacturing a bonding wire, bonding wire and assembly comprising such a bonding wire.

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US6336269B1 (en) 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
AU4159996A (en) * 1994-11-15 1996-06-17 Formfactor, Inc. Interconnection elements for microelectronic components
EP0792517B1 (en) * 1994-11-15 2003-10-22 Formfactor, Inc. Electrical contact structures from flexible wire
US6727579B1 (en) 1994-11-16 2004-04-27 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US20030006267A1 (en) * 2001-06-14 2003-01-09 Chen Kim H. Room temperature gold wire bonding
US20040217488A1 (en) * 2003-05-02 2004-11-04 Luechinger Christoph B. Ribbon bonding
US7812358B2 (en) * 2005-09-13 2010-10-12 Showa Denko K.K. Light-emitting device
DE102013200308A1 (en) * 2013-01-11 2014-07-17 Infineon Technologies Ag Bonding wire for use in power-electronic module and electrical component, has filament whose melting temperature at specific pressure is higher than melting temperature of matrix at specific pressure

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8485418B2 (en) 1995-05-26 2013-07-16 Formfactor, Inc. Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out
DE102006060899A1 (en) 2006-12-20 2008-07-10 Micro-Systems-Engineering Gmbh & Co. Kg Lead wire, method of making such and assembly
DE102008043361A1 (en) 2008-10-31 2010-05-06 Micro Systems Engineering Gmbh Connecting wire and method for producing such
EP2190013A2 (en) 2008-10-31 2010-05-26 Micro Systems Engineering GmbH Connection wire and method for manufacturing the same
US8450611B2 (en) 2008-10-31 2013-05-28 Heraeus Materials Technology Gmbh & Co. Kg Connecting wire and method for manufacturing same
DE102010031993B4 (en) * 2010-07-22 2015-03-12 Heraeus Materials Technology Gmbh & Co. Kg A method of manufacturing a bonding wire, bonding wire and assembly comprising such a bonding wire.
DE102010056343A1 (en) 2010-12-29 2012-07-05 Von Ardenne Anlagentechnik Gmbh Device for vacuum-thin film coating of rod- or tubular-shaped solid substrates, comprises magnetron as source for coating, where magnetron is aligned on destination and comprises target arranged in sequence starting from destination

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